JPH01301178A - Manufacture and assembly of semiconductor acceleration sensor - Google Patents
Manufacture and assembly of semiconductor acceleration sensorInfo
- Publication number
- JPH01301178A JPH01301178A JP13307688A JP13307688A JPH01301178A JP H01301178 A JPH01301178 A JP H01301178A JP 13307688 A JP13307688 A JP 13307688A JP 13307688 A JP13307688 A JP 13307688A JP H01301178 A JPH01301178 A JP H01301178A
- Authority
- JP
- Japan
- Prior art keywords
- cantilever
- wafer
- groove
- reverse surface
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 230000001133 acceleration Effects 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 241001082241 Lythrum hyssopifolia Species 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229920003251 poly(α-methylstyrene) Polymers 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体片持ばりを用いたピエゾ抵抗による
半導体加速度センサの製造組立て方法に関し、特にウェ
ーハから分割された各片持ばりの破損防止にかかわる。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing and assembling a piezoresistive semiconductor acceleration sensor using semiconductor cantilever beams, and in particular to a method for preventing damage to each cantilever beam divided from a wafer. related to.
第3図は例えば特開昭62−221164号公報に示さ
れた従来の半導体加速度センサを示す要部斜視図である
。図において、1はシリコンからなる片持ばりで、固定
端近くの裏面部に溝部1aが設けられ、局所的に薄肉部
1bが形成されていて、センサ感度を高゛めている。こ
の薄肉部1a表面部には熱拡散などにより複数のピエゾ
抵抗2が設けられていて、ブリッジ回路に構成されてい
る。FIG. 3 is a perspective view of a main part of a conventional semiconductor acceleration sensor disclosed in, for example, Japanese Unexamined Patent Publication No. 62-221164. In the figure, reference numeral 1 denotes a cantilever beam made of silicon, with a groove 1a provided on the back surface near the fixed end, and a thin wall 1b formed locally to increase sensor sensitivity. A plurality of piezoresistors 2 are provided on the surface of this thin portion 1a by thermal diffusion, etc., and are configured as a bridge circuit.
上記半導体加速度センサの製造方法を第4図により説明
する。シリコンウェーハ5に多数の支持ぼり素子部1人
を形成する。これら各素子部IAには、それぞれ表面部
に第3図に示すピエゾ抵抗2が形成されブリッジ回路に
構成されており、裏面にエツチングにより溝部1&がX
軸方向に連続して形成されている。この状態のウェーハ
5に各支持ぼす素子部1人を分割する切込みfa6を縦
方向と横方向とに入れる。A method of manufacturing the semiconductor acceleration sensor will be explained with reference to FIG. A large number of support elements are formed on a silicon wafer 5. Each of these element portions IA has a piezoresistor 2 shown in FIG. 3 formed on its front surface to form a bridge circuit, and grooves 1 &
It is formed continuously in the axial direction. Cuts fa6 are made in the wafer 5 in this state in both the vertical and horizontal directions to divide each supporting element section.
このように形成されたウェーハ5を、分割手段(図示は
略す)により各切込み線6に沿い多数に分割し、第3図
に示す片持ばり1が多数個できる。The wafer 5 thus formed is divided into a large number of pieces along each score line 6 by a dividing means (not shown), thereby producing a large number of cantilever beams 1 as shown in FIG.
この片持ばり1をパッケージの台座(図示は略す)に接
合して組立てる。This cantilever beam 1 is joined to a package pedestal (not shown) for assembly.
上記のような従来の半導体加速度センサの製造組立方法
では、ウェーハ5に多数の片持ばり素子部1人が形成さ
れ、裏面に溝部1aが形成され、各片持ばり1に分割さ
れるが、片持ばり1の薄肉部1bの厚さは例えば10〜
80μmになっており、非常に薄く、かつ、溝部1aに
より応力が集中し、機械的強度が極めて小さい。このた
め、搬送やパッケージに組立ての際、破損しやすいとい
う問題点があった。In the conventional method for manufacturing and assembling a semiconductor acceleration sensor as described above, a large number of cantilever element parts are formed on the wafer 5, a groove part 1a is formed on the back surface, and the wafer is divided into each cantilever beam 1. The thickness of the thin part 1b of the cantilever beam 1 is, for example, 10~
The thickness is 80 μm, which is very thin, and stress is concentrated in the groove portion 1a, resulting in extremely low mechanical strength. For this reason, there is a problem in that it is easily damaged during transportation or assembly into a package.
この発明は、このような従来の半導体加速度センサの製
造組立方法の問題点を解決するためになされたもので、
半導体片持ばりの破損をなくする半導体加速度センサの
製造組立方法を得ることを目的としている。This invention was made in order to solve the problems of the conventional method of manufacturing and assembling semiconductor acceleration sensors.
The object of the present invention is to obtain a method for manufacturing and assembling a semiconductor acceleration sensor that eliminates damage to semiconductor cantilevers.
この発明にかかる半導体加速度センサの製造組立方法は
、製造工程でウェーハに形成した片持ばり素子部の裏面
に溝部を形成後、この裏面に熱分割樹脂層を付着し、各
個に分割された片持ばりを台座を介しパッケージに接合
後、加熱して熱分割樹脂層を昇華除去したものである。The method for manufacturing and assembling a semiconductor acceleration sensor according to the present invention is to form a groove on the back surface of a cantilever element formed on a wafer in the manufacturing process, and then to attach a heat splitting resin layer to the back surface to separate each piece into individual pieces. After the support beam is bonded to the package via the pedestal, it is heated to sublimate and remove the heat splitting resin layer.
この発明においては、各個に分割された片持ばりは裏面
に熱分解樹脂層が付着され溝部が保護されており、搬送
や組立てにおいて、溝部から破損することがない。In this invention, a pyrolytic resin layer is attached to the back surface of each divided cantilever beam to protect the groove portion, so that the cantilever beam is not damaged from the groove portion during transportation or assembly.
第1図はこの発明による製造組立方法による半導体加速
度センサの一実施例の概要斜視図である。FIG. 1 is a schematic perspective view of an embodiment of a semiconductor acceleration sensor manufactured by the manufacturing and assembly method according to the present invention.
図において、1、Iallb、 2は上記従来のものと
同一のものであり、説明は略する。片持ばり1の裏面に
は熱分解樹脂(例えばポリアルファメチルスチレン)M
llが付着され、溝部1&を保護している。】2は例え
ばシリコンからなり、接合材(例えば金シリコン共晶合
金)により片持ばり1の固定端部に接合された台座で、
組立てにおいてパッケージ(図示は略す)に接合される
。In the figure, 1, Iallb, and 2 are the same as those in the conventional system, and their explanation will be omitted. The back side of the cantilever beam 1 is coated with a pyrolytic resin (for example, polyalphamethylstyrene) M.
ll is attached to protect the groove 1&. ] 2 is a pedestal made of silicon, for example, and bonded to the fixed end of the cantilever beam 1 with a bonding material (for example, gold-silicon eutectic alloy);
It is joined to a package (not shown) during assembly.
上記片持ばり1部の製造を、第2図により説明する。シ
リコンなど半導体ウェーハ5に多数の片持ばり素子部1
人を形成する。これら各素子部1人には、それぞれ表面
部に第1図に示すピエゾ抵抗2が形成され、ブリッジに
構成されており、裏面にエツチングにより溝部1aをX
軸方向に連続して形成している。また、裏面には各素子
部1人の固定端部になる部分を除き、熱分解樹脂層11
を塗布などにより付着する。The manufacture of one part of the above-mentioned cantilever beam will be explained with reference to FIG. A large number of cantilever element portions 1 are formed on a semiconductor wafer 5 such as silicon.
Form people. A piezoresistor 2 shown in FIG. 1 is formed on the surface of each of these element parts, forming a bridge, and a groove 1a is etched on the back surface.
It is formed continuously in the axial direction. In addition, on the back side, a pyrolytic resin layer 11 is provided, except for the portion that becomes the fixed end of each element.
Attach by coating etc.
この状態のウェーハ5の表面に各支持ぼり素子部1人を
分割する切込み線6を縦方向と横方向とに入れる。Incision lines 6 are made in the vertical and horizontal directions on the surface of the wafer 5 in this state to divide each supporting element element.
このように加工されたウェーハ5を、分割手段(図示は
略す)により各切込み線6に沿い多数に分割し、第1図
に示すように、裏面に熱分解樹1Il1層11を付着し
た片持ばり1が多数個できる。この片持ばり1の固定端
に台座12を接合する。The thus processed wafer 5 is divided into a large number of pieces along each score line 6 by a dividing means (not shown), and as shown in FIG. Many burrs 1 are formed. A pedestal 12 is joined to the fixed end of this cantilever beam 1.
このように構成された加速度センサを、パッケージ(図
示は略す)に台座12を介し接合して取付けろ。次に加
熱(例えば180℃)して熱分解樹脂層11を昇華し除
去する。The acceleration sensor configured in this manner is attached to a package (not shown) by joining it via the pedestal 12. Next, the pyrolytic resin layer 11 is sublimated and removed by heating (for example, 180° C.).
このように、片持ばり1はウェーハ5に形成された段階
から裏面の熱分解樹脂層11により、機械的強度の小さ
い溝部1龜が保護されており、搬送などでの取扱いや、
パッケージへの取付けなどでの破損が防止される。In this way, since the cantilever beam 1 is formed on the wafer 5, the groove portion 1, which has low mechanical strength, is protected by the pyrolytic resin layer 11 on the back side, making it difficult to handle during transportation, etc.
This prevents damage during installation to the package, etc.
以上のように、この発明によれば、半導体片持ばりの裏
面に熱分解樹脂層を付着して溝部を保護し、片持ばりの
固定端部をパッケージに接合後、加熱し熱分解樹脂層を
除去するようにしたので、片持ばりが搬送、組立てにお
いて薄肉部からの破損が防止され、取扱いが容易になる
。As described above, according to the present invention, a pyrolytic resin layer is attached to the back surface of a semiconductor cantilever beam to protect the groove, and after the fixed end of the cantilever beam is bonded to a package, heating is performed to form a pyrolytic resin layer. Since the cantilever beam is removed, damage to the thin wall portion during transportation and assembly is prevented, and handling is facilitated.
【図面の簡単な説明】
第1図はこの発明の製造組立方法によった半導体加速度
センサの一実施例を示す概要斜視図、第2図の(a)及
び(b)は第1図の加速度センサを製造するウェーハの
平面図及び正面図、第3図は従来の製造組立方法によっ
た半導体加速度センサの概要斜視図、第4図(a)及び
(b)は第3図の加速度センサを製造するウェーハの平
面図及び正面図である。
図中、1は半導体片持ばり、1aは溝部、1bは薄肉部
、2はピエゾ抵抗、5は半導体ウェーハ、11は熱分解
樹脂層、12は台座である。
尚、図中同一符号は同−又は相当部分を示す。[Brief Description of the Drawings] Fig. 1 is a schematic perspective view showing an embodiment of a semiconductor acceleration sensor according to the manufacturing and assembly method of the present invention, and Fig. 2 (a) and (b) show the acceleration of Fig. 1. A plan view and a front view of a wafer for manufacturing a sensor, FIG. 3 is a schematic perspective view of a semiconductor acceleration sensor manufactured by a conventional manufacturing and assembly method, and FIGS. 4(a) and (b) are a diagram of the acceleration sensor of FIG. FIG. 2 is a plan view and a front view of a wafer to be manufactured. In the figure, 1 is a semiconductor cantilever, 1a is a groove portion, 1b is a thin wall portion, 2 is a piezoresistor, 5 is a semiconductor wafer, 11 is a pyrolytic resin layer, and 12 is a pedestal. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
を薄肉部にし、この薄肉部の表面部には複数のピエゾ抵
抗を形成してブリッジ回路を構成してあり、上記片持ば
りの裏面に固定端部を除き熱分解樹脂層を付着し、片持
ばりを固定端で台座を介しパッケージに固着後、加熱に
より上記分解樹脂層を昇華除去することを特徴とする半
導体加速度センサの製造組立方法。A groove is provided on the back surface near the fixed end of the semiconductor cantilever beam, and the upper part is made into a thin-walled portion, and a plurality of piezoresistors are formed on the surface of this thin-walled portion to form a bridge circuit. Manufacturing and assembly of a semiconductor acceleration sensor, characterized in that a pyrolytic resin layer is attached to the cantilever except for the fixed end, the cantilever beam is fixed to the package via the pedestal at the fixed end, and the decomposed resin layer is sublimated and removed by heating. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13307688A JPH01301178A (en) | 1988-05-30 | 1988-05-30 | Manufacture and assembly of semiconductor acceleration sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13307688A JPH01301178A (en) | 1988-05-30 | 1988-05-30 | Manufacture and assembly of semiconductor acceleration sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01301178A true JPH01301178A (en) | 1989-12-05 |
Family
ID=15096284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13307688A Pending JPH01301178A (en) | 1988-05-30 | 1988-05-30 | Manufacture and assembly of semiconductor acceleration sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01301178A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002075794A2 (en) * | 2001-03-15 | 2002-09-26 | Reflectivity, Inc. | A method for making a micromechanical device by using a sacrificial substrate |
-
1988
- 1988-05-30 JP JP13307688A patent/JPH01301178A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002075794A2 (en) * | 2001-03-15 | 2002-09-26 | Reflectivity, Inc. | A method for making a micromechanical device by using a sacrificial substrate |
WO2002075794A3 (en) * | 2001-03-15 | 2002-11-14 | Reflectivity Inc | A method for making a micromechanical device by using a sacrificial substrate |
US6900072B2 (en) | 2001-03-15 | 2005-05-31 | Reflectivity, Inc. | Method for making a micromechanical device by using a sacrificial substrate |
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