JPH01299008A - Molding device - Google Patents
Molding deviceInfo
- Publication number
- JPH01299008A JPH01299008A JP13088488A JP13088488A JPH01299008A JP H01299008 A JPH01299008 A JP H01299008A JP 13088488 A JP13088488 A JP 13088488A JP 13088488 A JP13088488 A JP 13088488A JP H01299008 A JPH01299008 A JP H01299008A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- mold
- coating
- resin
- gold coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000465 moulding Methods 0.000 title claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 claims abstract description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 abstract description 21
- 239000011347 resin Substances 0.000 abstract description 21
- 238000007789 sealing Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000006082 mold release agent Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000009713 electroplating Methods 0.000 abstract description 2
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 abstract description 2
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 238000005238 degreasing Methods 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子を樹脂封止する際に使用されるモー
ルド金型に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a mold used for resin-sealing a semiconductor element.
従来のこの種モールド金型は下金型と下金型とから構成
されておシ、このモールド金型を使用して半導体素子を
樹脂封止するには、半導体素子を搭載したリードフレー
ムを下金型上に位置決め載置し、この下金型と上金型を
型締めした後、両金型によって形成されたキャビティ内
に封止樹脂を注入することによって行なわれている。こ
のモールド金型は１３０℃〜２００℃に保たれた状態で
連続使用されるために耐熱性、耐食性、耐摩耗性等が要
求される。このため従来のモールド金型の金型面には硬
質クロムめっきが施されていた。また、この硬質クロム
めっきは光沢が与えられて形成されているＫもかかわら
ず樹脂が接着されやすいため、樹脂を離型させる際に封
止樹脂が外観を損なうことなく容易に離型できるように
、樹脂注入前に金型面に離型剤が塗布されていた。Conventional molds of this type consist of a lower mold and a lower mold.In order to use this mold to encapsulate a semiconductor element with resin, the lead frame on which the semiconductor element is mounted must be lowered. This is done by positioning and mounting the mold on the mold, clamping the lower mold and the upper mold, and then injecting a sealing resin into the cavity formed by both molds. This mold is required to have heat resistance, corrosion resistance, abrasion resistance, etc. because it is used continuously at a temperature of 130°C to 200°C. For this reason, hard chrome plating has been applied to the mold surface of conventional molds. In addition, even though this hard chrome plating is glossy, resin tends to adhere to it, so when releasing the resin from the mold, the sealing resin can be easily released from the mold without damaging the appearance. , a mold release agent was applied to the mold surface before resin injection.
しかるに、このように金型面に離型剤を塗布すると、封
止樹脂内に離型剤が混入し半導体装置の信頼性が低下し
たシ、封止樹脂の表面に離型剤が付着して残シ、表面が
荒れることがあるという問題があった。However, when a mold release agent is applied to the mold surface in this way, the mold release agent gets mixed into the encapsulation resin, reducing the reliability of the semiconductor device, and the mold release agent adheres to the surface of the encapsulation resin. There was a problem that the surface could become rough due to residue.
本発明に係るモールド金型は、モールド金型におけるキ
ャビティの表面に金被膜を設けたものである。The mold according to the present invention is a mold in which a gold coating is provided on the surface of a cavity.
金被膜が樹脂と金型とが接着するのを阻止するため、離
型剤が不要となる。Since the gold coating prevents the resin from adhering to the mold, no mold release agent is required.
以下、その構成等を図に示す実施例によシ詳細に説明す
る。Hereinafter, the configuration and the like will be explained in detail with reference to the embodiment shown in the drawings.
図面は本発明のモールド金型を示す側断面図で、同図に
おいて１は半導体素子、２はリードフレームで、半導体
素子１はこのリードフレーム２上に固着されている。３
は前記リードフレーム２を載置固定する下金型、４は上
金型で、これら両全型には封止樹脂を成形するためのキ
ャビティを形成する凹部３ｍ、４ａ が形成されている
。５ａ、５ｂは金被膜で、との金波＠５は前記上下両金
型３゜４の凹部３ａ、４ａ を含む金型面に電気めっき
法によって形成されている。また、この金被膜５ａ１゜
５ｂはめつき条件を調整することによって表面粗さが０
．１μｍ以下になるよ・う形成され、その表面が鏡面に
なるよう形成されている。なお、この金被膜５ａ、５ｂ
を形成するには、先ず上下両金型３．４の金型面を研摩
し脱脂処理することによシ金型面を平滑かつ清浄にする
。その後両金型３゜４を陰極とし、金等を陽極として、
例えば過剰のシアン化カリワムにシアン化金を溶解させ
た電解浴中で電解させることによって金型面に金被膜５
ａ、５ｂが形成されることになる。The drawing is a side sectional view showing a molding die of the present invention. In the figure, 1 is a semiconductor element, 2 is a lead frame, and the semiconductor element 1 is fixed onto this lead frame 2. 3
4 is a lower mold for mounting and fixing the lead frame 2, and 4 is an upper mold, both of which are formed with recesses 3m and 4a that form cavities for molding the sealing resin. 5a and 5b are gold coatings, and the gold waves @5 are formed by electroplating on the mold surface including the recesses 3a and 4a of both the upper and lower molds 3.4. Moreover, by adjusting the plating conditions of this gold coating 5a1, 5b, the surface roughness can be reduced to zero.
．． It is formed to have a thickness of 1 μm or less, and its surface is formed to have a mirror surface. Note that these gold coatings 5a, 5b
To form this, first, the mold surfaces of both the upper and lower molds 3.4 are polished and degreased to make them smooth and clean. After that, both molds 3゜4 are used as cathodes, gold etc. are used as anodes,
For example, a gold coating 5 is formed on the mold surface by electrolyzing in an electrolytic bath in which gold cyanide is dissolved in excess potassium cyanide.
a, 5b will be formed.
次に、このように構成されたモールド金型を使用して封
止樹脂を成形する方法を説明する。Next, a method of molding the sealing resin using the mold configured as described above will be described.
先ず、半導体素子１を搭載したリードフレーム２を下金
型３上に載置固定する。そして、この下金型３と上金型
４を図に示すように壓締めし、キャビティ内に加熱溶融
された封止樹脂（図示せず）を注入する。この封止樹脂
は酸無水物系硬化剤を使用し、かつフィラーを含有しな
いエポキシ樹脂が用いられ、半導体素子１およびリード
フレーム２には強固に接着されるが、金被膜５ａ、５ｂ
には非接着性を示す。樹脂が硬化した後上下金型３゜４
を離間させ、封止樹脂金リードフレーム２ごと離型させ
ることによって樹脂対土工程が終了することになる。First, the lead frame 2 on which the semiconductor element 1 is mounted is placed and fixed on the lower mold 3. Then, the lower mold 3 and the upper mold 4 are clamped together as shown in the figure, and heated and melted sealing resin (not shown) is injected into the cavity. This sealing resin uses an epoxy resin that uses an acid anhydride curing agent and does not contain fillers, and is firmly adhered to the semiconductor element 1 and lead frame 2, but the gold coatings 5a, 5b
shows non-adhesive properties. After the resin hardens, the upper and lower molds 3゜4
The resin-to-soil process is completed by separating the lead frame 2 from the mold and releasing the resin-sealed gold lead frame 2 from the mold.
したがって、離型時には封止淘脂が上下金型３．４に接
着するのを金被膜５ａ、５ｂ が阻止するととＫなるか
ら、離型剤を使用しなくても封止樹脂を外観を損々うこ
となく離型させることができる。Therefore, since the gold coatings 5a and 5b prevent the sealing resin from adhering to the upper and lower molds 3.4 during mold release, the sealing resin does not damage the appearance even without using a mold release agent. It can be released from the mold without any trouble.
なお、前記実施例では金被膜５ａ、５ｂを上下金型３．
４の金型面に形成した例を示したが、モールド装置にお
ける金型以外の樹脂流路の表面に形成してもよく、同等
の効果が得られる。In the above embodiment, the gold coatings 5a and 5b were applied to the upper and lower molds 3.
Although an example is shown in which it is formed on the mold surface in No. 4, it may be formed on the surface of the resin flow path other than the mold in the molding device, and the same effect can be obtained.
以上説明したように本発明によれば、モールド金整にお
けるキャビティの表面に金被膜を設けたため、金被膜が
樹脂と金型とが接着するのを阻止するから、離型剤が不
要となる。したがって、本発明のモールド金型によって
成形された封止樹脂は表面が平滑に形成され、しかも不
純物が混入されないから信頼性が向上されることになる
という効果がある。As explained above, according to the present invention, since the gold coating is provided on the surface of the cavity in the mold preparation, the gold coating prevents the resin and the mold from adhering, so a mold release agent is not required. Therefore, the sealing resin molded by the mold of the present invention has a smooth surface and is not contaminated with impurities, resulting in improved reliability.
図面は本発明のモールド金型を示す側断面図である。
３・・・・下金型、３ａ・・・・凹部、４・・・・上金
型、４ａ ・・・・凹部、５ａ、５ｂ ・・・拳金被膜
。The drawing is a side sectional view showing the mold of the present invention. 3...lower mold, 3a...recess, 4...upper mold, 4a...recess, 5a, 5b...fist metal coating.
Claims (1)
けたことを特徴とするモールド装置。A molding device characterized in that a gold coating is provided on the surface of a cavity in a molding die.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13088488A JPH01299008A (en) | 1988-05-27 | 1988-05-27 | Molding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13088488A JPH01299008A (en) | 1988-05-27 | 1988-05-27 | Molding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01299008A true JPH01299008A (en) | 1989-12-01 |
Family
ID=15044950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13088488A Pending JPH01299008A (en) | 1988-05-27 | 1988-05-27 | Molding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01299008A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5800841A (en) * | 1994-11-24 | 1998-09-01 | Apic Yamada Corporation | Resin molding machine |
| US5800747A (en) * | 1996-07-02 | 1998-09-01 | Motorola, Inc. | Method for molding using an ion implanted mold |
| US5824252A (en) * | 1995-02-22 | 1998-10-20 | Apic Yamada Corporation | Method of resin molding and resin molding machine for the same |
| US5891384A (en) * | 1994-11-21 | 1999-04-06 | Apic Yamada Corporation | Method of operating a molding machine with release film |
| US6459159B1 (en) * | 1998-01-23 | 2002-10-01 | Apic Yamada Corporation | Apparatus for sealing a semiconductor device utilizing a release film |
-
1988
- 1988-05-27 JP JP13088488A patent/JPH01299008A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891384A (en) * | 1994-11-21 | 1999-04-06 | Apic Yamada Corporation | Method of operating a molding machine with release film |
| US5800841A (en) * | 1994-11-24 | 1998-09-01 | Apic Yamada Corporation | Resin molding machine |
| US6444157B1 (en) | 1994-11-24 | 2002-09-03 | Apic Yamada Corporation | Method of resin molding |
| US5824252A (en) * | 1995-02-22 | 1998-10-20 | Apic Yamada Corporation | Method of resin molding and resin molding machine for the same |
| US5800747A (en) * | 1996-07-02 | 1998-09-01 | Motorola, Inc. | Method for molding using an ion implanted mold |
| US6459159B1 (en) * | 1998-01-23 | 2002-10-01 | Apic Yamada Corporation | Apparatus for sealing a semiconductor device utilizing a release film |
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