JPH01295512A - Manufacture of piezoelectric resonator - Google Patents
Manufacture of piezoelectric resonatorInfo
- Publication number
- JPH01295512A JPH01295512A JP9263689A JP9263689A JPH01295512A JP H01295512 A JPH01295512 A JP H01295512A JP 9263689 A JP9263689 A JP 9263689A JP 9263689 A JP9263689 A JP 9263689A JP H01295512 A JPH01295512 A JP H01295512A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- piezoelectric
- electrodes
- piezoelectric resonator
- spurious
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000005520 cutting process Methods 0.000 abstract description 3
- 229910003460 diamond Inorganic materials 0.000 abstract description 3
- 239000010432 diamond Substances 0.000 abstract description 3
- 238000012217 deletion Methods 0.000 description 6
- 230000037430 deletion Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は圧電基板の面積振動モードを使用する圧電共振
子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a piezoelectric resonator using area vibration modes of a piezoelectric substrate.
従来より、圧電基板の拡がり振動、径方向振動あるいは
長さ方向振動等のいわゆる圧電基板の面積振動モードを
使用する圧電共振子において、圧電基板の厚み方向の振
動によるスプリアスレスポンスを抑圧するため、主面に
予め凹凸を設けた圧電基板に電極を形成し、圧電基板の
厚みを不均一トシて上記スプリアスレスポンスを抑圧す
るようにしたものが一般に知られている。Conventionally, in piezoelectric resonators that use the so-called area vibration mode of the piezoelectric substrate, such as spreading vibration, radial vibration, or longitudinal vibration of the piezoelectric substrate, the main It is generally known that electrodes are formed on a piezoelectric substrate whose surface has been provided with irregularities in advance, and the thickness of the piezoelectric substrate is made uneven to suppress the above-mentioned spurious response.
ところで、上記のように、圧電基板の主面に予め凹凸を
形成して焼成するのは加工が煩雑で、圧電共振子の量産
性に欠けていた。By the way, as described above, forming irregularities on the main surface of a piezoelectric substrate in advance and then firing the piezoelectric substrate requires complicated processing and lacks mass productivity of piezoelectric resonators.
本発明は上記欠点を解消すべくなされたものであって、
その目的は、主面に電極の形成された圧電基板の一部を
削除することにより、圧電基板に厚みの不均一な部分を
形成し、面積振動モードを利用する圧電共振子の厚み方
向のスプリアスレスポンスが―圧される圧電共振子を量
産性の高い簡単な手法で効率よく生産することのできる
圧電共振子の製造方法を提供することである。The present invention has been made to solve the above-mentioned drawbacks, and includes:
The purpose of this is to remove a part of the piezoelectric substrate with electrodes formed on its main surface, thereby forming a part with an uneven thickness on the piezoelectric substrate, and thereby suppressing spurious waves in the thickness direction of the piezoelectric resonator that utilizes the areal vibration mode. An object of the present invention is to provide a method for manufacturing a piezoelectric resonator that can efficiently produce a piezoelectric resonator with a high response level by a simple method with high mass productivity.
このため、本発明は、圧電基板の面積振動モードを使用
する圧電共振子の製造方法において、電極形成後、厚み
が一様な上記圧電基板の主振動面を含む一部を削除する
ことにより、上記圧電基板に厚みの不均一な部分を形成
するようにしたことを特徴としている。For this reason, the present invention provides a method for manufacturing a piezoelectric resonator using the areal vibration mode of a piezoelectric substrate, by removing a portion including the main vibration surface of the piezoelectric substrate having a uniform thickness after forming the electrodes. A feature of the piezoelectric substrate is that portions with non-uniform thickness are formed on the piezoelectric substrate.
以下、添付の図面を参照して本発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第１図（ａ）および第１図（ｂ）に本発明に係る圧電共
振子の一実施例を示す。FIG. 1(a) and FIG. 1(b) show an embodiment of a piezoelectric resonator according to the present invention.
第１図（ａ）および第１図（ｂ）に示す実施例は、四角
形の板状に焼成した圧電基板１１の両生面に夫々電極１
２．１３を形成するとともに、ダイヤモンドカッタ等の
切削工具により、上記電極１２．１３のうち電極１２の
一辺を含んで、上記圧電基板１１の一つの稜を削除し、
上記圧電基板１１にテーパ状の削除部１４を形成したも
のである。In the embodiment shown in FIG. 1(a) and FIG. 1(b), electrodes 1 are placed on both sides of a piezoelectric substrate 11 fired in the shape of a rectangular plate.
2.13, and one edge of the piezoelectric substrate 11 including one side of the electrode 12 of the electrode 12.13 is removed using a cutting tool such as a diamond cutter;
A tapered cutout portion 14 is formed on the piezoelectric substrate 11.
上記のように、圧電基板１１に削除部１４を形成すると
、圧電基板１１の一部に他の部分とは厚みの異なる部分
が存在することになり、上記圧電基板１１の厚み方向の
振動のスプリアスレスポンスが抑圧されるとともに、位
相特性も改善される。As described above, when the removed portion 14 is formed in the piezoelectric substrate 11, a portion of the piezoelectric substrate 11 has a thickness different from that of other portions, which causes spurious vibrations in the thickness direction of the piezoelectric substrate 11. The response is suppressed and the phase characteristics are also improved.
ちなみに、第２図に示すように、圧電基板１１の縦Ｗｏ
＝４．９ｍｍ、横ｗ＋＝４．９ｍｉ＋、電極１１ａ、ｌ
］、ｂを含む厚さｔｏ−０，５ｍｍで、共振周波数ｆ
ｒ−４４２，６２ＫＨｚ、***振周波数ｆａ−４５６，
２８ＫＨｚ、共振抵抗Ｒ１−７，８オーム制動容量ｃｆ
＝２９３．８ｐＦ、電気機械結合係数に−２７，５５％
、機械的Ｑｍ＝２６６０であり、削除部１４を有しない
拡がり振動モードを有する圧電共振子では、周波数−減
衰率特性は第３図において曲線Ｑ、で示すようになり、
４．２５ＭＨｚから４．７５ＭＨｚの周波数帯に存在す
るスプリアスレスポンスの山谷比は約６０゜ｄＢとなっ
ている。Incidentally, as shown in FIG. 2, the vertical Wo of the piezoelectric substrate 11 is
=4.9mm, horizontal w+=4.9mi+, electrodes 11a, l
], thickness to-0,5 mm including b, resonant frequency f
r-442, 62KHz, anti-resonance frequency fa-456,
28KHz, resonant resistance R1-7,8 ohm braking capacity cf
=293.8pF, -27.55% to electromechanical coupling coefficient
, mechanical Qm=2660, and in a piezoelectric resonator having a spreading vibration mode without the deletion part 14, the frequency-damping rate characteristic becomes as shown by the curve Q in FIG.
The peak-to-valley ratio of the spurious response that exists in the frequency band from 4.25 MHz to 4.75 MHz is approximately 60° dB.
ところで、第１図（ｂ）に示すように、第２図と同一の
寸法を有する圧電基板１１の端面１１ａおよび電極１２
での削り込み深さ１．およびｔ２が夫々ｔ＋−０，３關
およびｔｚ＝０．２ｍｍである削除部１４を有し、ｆ
ｒ＝４４８−７４ＫＨｚ、ｆａ−４６２−５２ＫＨｚ、
Ｒ１−９，１オーム、Ｃｆ−２８０，８ｐＦＳＫ＝２
７．４８％、Ｑｍｍ−２３５０の拡がり振動モードを有
する圧電共振子では、周波数−減衰率特性は第３図にお
いて曲線Ｑ２で示すようになり、４−２５ＭＨｚから４
゜７５ＭＨｚの周波数帯に存在するスプリアスレスポン
スの山谷比は約４３ｄＢとなっている。By the way, as shown in FIG. 1(b), the end surface 11a of the piezoelectric substrate 11 and the electrode 12 have the same dimensions as in FIG.
Cutting depth at 1. and t2 are t+-0, 3 mm and tz=0.2 mm, respectively, and f
r=448-74KHz, fa-462-52KHz,
R1-9, 1 ohm, Cf-280, 8pFSK=2
In a piezoelectric resonator with a spreading vibration mode of 7.48% and Qmm-2350, the frequency-damping rate characteristic becomes as shown by the curve Q2 in Fig. 3, and from 4-25 MHz to 4
The peak-to-valley ratio of the spurious response existing in the 75 MHz frequency band is approximately 43 dB.
従って、上記のように、削除部１４．を設けた圧電共振
子では、削除部１４を設けない圧電共振子に比較して、
スプリアスレスポンスが約１３ｄＢ改善されることが分
かる。Therefore, as described above, the deletion unit 14. In the piezoelectric resonator provided with this, compared to the piezoelectric resonator not provided with the deleted portion 14,
It can be seen that the spurious response is improved by about 13 dB.
一方、上記スプリアスレスポンスの存在する上記周波数
帯における位相特性を測定すると、削除部１４のない圧
電共振子では、第４図に曲線α、で示すようになり、ま
た、削除部１４を有する圧電共振子では、第４図に曲線
Ｑ４で示すようになる。On the other hand, when measuring the phase characteristics in the frequency band where the spurious response exists, the piezoelectric resonator without the deletion part 14 has a curve α shown in FIG. 4, and the piezoelectric resonator with the deletion part 14 In the child, the curve becomes as shown by curve Q4 in FIG.
上記第４図から分かるように、削除部１４を有する圧電
共振子では、スプリアスレスポンスの存在する約４．２
ＭＨｚから４．５ＭＨｚの周波数帯で、位相はプラスの
領域とマイナスの領域との間を頻繁に往復しており、削
除部１４を有しない圧電共振子よりも位相特性がか分散
していることが分かる。As can be seen from FIG. 4 above, in the piezoelectric resonator having the deletion portion 14, there is a spurious response of about 4.2
In the frequency band from MHz to 4.5 MHz, the phase frequently reciprocates between the positive region and the negative region, and the phase characteristics are more dispersed than a piezoelectric resonator that does not have the deletion portion 14. I understand.
上記のようにスプリアスレスポンスの存在する周波数帯
で位相特性が分散している圧電共振子を発振子として使
用すれば、周知のように、スプリアス領域での発振が発
生し難く、目的の周波数で発振する安定な発振回路を得
ることができる。As is well known, if a piezoelectric resonator whose phase characteristics are dispersed in the frequency band where spurious responses exist as described above is used as an oscillator, oscillation in the spurious region will be less likely to occur, and oscillation will occur at the desired frequency. A stable oscillation circuit can be obtained.
上記のように、圧電基板１１に削除部１４を形成するこ
とにより、圧電基板１１の厚み方向の振動によるスプリ
アスレスポンスの抑圧および位相特性の分散が得られる
が、上記削除部１４は圧電基板１１の１つの稜部に限定
されるものではなく、例えば、第５図、第６図および第
７図に夫々示すように、複雑個所に形成するようにして
も同様の効果を得ることができる。As described above, by forming the deleted portion 14 on the piezoelectric substrate 11, it is possible to suppress spurious responses caused by vibrations in the thickness direction of the piezoelectric substrate 11 and to disperse phase characteristics. It is not limited to one edge, but the same effect can be obtained even if it is formed at a complicated location, for example, as shown in FIGS. 5, 6, and 7, respectively.
また、上記削除部１４の形状も、テーパ状のものの他に
、第８図および第９図に夫々示すような段付きの形状で
あってもよく、第１０図に示すように、削除部１４の面
が円弧状に湾曲していてもよい。Further, the shape of the removed portion 14 may be a stepped shape as shown in FIGS. 8 and 9, respectively, in addition to a tapered shape. The surface may be curved in an arc shape.
さらに、第１１図（ａ）および第１１図（ｂ）に示すよ
うに、電極■２を通して、圧電基板１３に凹溝１５を設
けるようにしても、上記と同様のスプリアスレスポンス
の抑圧および位相特性の分散の効果を得ることができる
。Furthermore, as shown in FIGS. 11(a) and 11(b), even if a concave groove 15 is provided in the piezoelectric substrate 13 through the electrode 2, the same spurious response suppression and phase characteristics as described above can be achieved. The effect of dispersion can be obtained.
以上、詳述したことからも明らかなように、本発明は、
面積振動モードを利用する圧電共振子の主面に電極を形
成した圧電基盤をダイヤモンドカッタ等で電極を含んで
一部削除して圧電基板に厚みの不均一な部分を形成する
ようにしたから、圧電基板の厚み方向の振動によるスプ
リアスレスポンスがきわめて簡単な加工で抑圧され、ス
プリアスレスポンスおよび位相特性以外の主要な特性を
変化させずに圧電共振子を大量に生産することができる
。As is clear from the detailed description above, the present invention
A part of the piezoelectric substrate, including the electrodes, was removed using a diamond cutter or the like to form a portion of uneven thickness on the piezoelectric substrate, which uses an area vibration mode. Spurious responses caused by vibrations in the thickness direction of the piezoelectric substrate are suppressed through extremely simple processing, and piezoelectric resonators can be mass-produced without changing major characteristics other than spurious responses and phase characteristics.
第１図（ａ）および第１図（ｂ）は夫々本発明に係る圧
電共振子の一実施例の斜視図および断面図、第２図は削
除部を有しない圧電共振子の斜視図、第３図は第１図（
ａ）および第１図（ｂ）の圧電共振子の周波数−減衰特
性図、第４図は第１図（ａ）および第１図（ｂ）の圧電
共振子の周波数−位相特性図、第５図、第６図、第７図
、第８図、第９図および第１Ｏ図は夫々第１図（ａ）お
よび第１図（ｂ）の実施例の変形例の断面図、第１１図
（ａ）および第１１図（ｂ）は夫々圧電基板に凹溝を設
けた場合の実施例を示す斜視図および断面図である。
１１・・・圧電基板、１２．１３・・・電極、１４・・
・削除部、Ｉ５・・・凹溝。
特許出願人 株式会社村田製作所
代理人 弁理士 青白 葆 ほか２名
第１１図（ａ）
第２図1(a) and 1(b) are respectively a perspective view and a sectional view of an embodiment of a piezoelectric resonator according to the present invention, and FIG. 2 is a perspective view of a piezoelectric resonator without a deleted portion. Figure 3 is the same as Figure 1 (
FIG. 4 is a frequency-attenuation characteristic diagram of the piezoelectric resonator in FIGS. 1(a) and 1(b), and FIG. 5 is a frequency-attenuation characteristic diagram of the piezoelectric resonator in FIGS. Figures 6, 7, 8, 9 and 10 are sectional views of modified examples of the embodiment of Figures 1(a) and 1(b), respectively, and Figure 11( FIG. 11(a) and FIG. 11(b) are a perspective view and a cross-sectional view, respectively, showing an embodiment in which a groove is provided in a piezoelectric substrate. 11... Piezoelectric substrate, 12.13... Electrode, 14...
・Deleted part, I5...concave groove. Patent applicant: Murata Manufacturing Co., Ltd. Representative: Patent attorney: Seihaku Ao and two others Figure 11(a) Figure 2
Claims (1)
の製造方法において、電極形成後、厚みが一様な上記圧
電基板の主振動面を含む一部を削除することにより、上
記圧電基板に厚みの不均一な部分を形成するようにした
ことを特徴とする圧電共振子の製造方法。(1) In a method of manufacturing a piezoelectric resonator using the areal vibration mode of a piezoelectric substrate, after forming electrodes, a portion of the piezoelectric substrate including the main vibration surface having a uniform thickness is removed. A method of manufacturing a piezoelectric resonator, characterized in that a portion having a non-uniform thickness is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9263689A JPH01295512A (en) | 1989-04-12 | 1989-04-12 | Manufacture of piezoelectric resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9263689A JPH01295512A (en) | 1989-04-12 | 1989-04-12 | Manufacture of piezoelectric resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01295512A true JPH01295512A (en) | 1989-11-29 |
Family
ID=14059932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9263689A Pending JPH01295512A (en) | 1989-04-12 | 1989-04-12 | Manufacture of piezoelectric resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01295512A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0620048A2 (en) * | 1993-04-12 | 1994-10-19 | Acuson Corporation | Ultrasound transducers with reduced sidelobes and method for manufacture thereof |
| JP4653868B2 (en) * | 1999-03-30 | 2011-03-16 | アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド | Bulk acoustic wave resonator filter with improved transverse mode suppression |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
| US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
| US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
| US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
| US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
| US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165413A (en) * | 1980-05-26 | 1981-12-19 | Toshiba Corp | Thickness slip oscillator |
-
1989
- 1989-04-12 JP JP9263689A patent/JPH01295512A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165413A (en) * | 1980-05-26 | 1981-12-19 | Toshiba Corp | Thickness slip oscillator |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0620048A2 (en) * | 1993-04-12 | 1994-10-19 | Acuson Corporation | Ultrasound transducers with reduced sidelobes and method for manufacture thereof |
| EP0620048A3 (en) * | 1993-04-12 | 1995-11-29 | Acuson | Ultrasound transducers with reduced sidelobes and method for manufacture thereof. |
| JP4653868B2 (en) * | 1999-03-30 | 2011-03-16 | アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド | Bulk acoustic wave resonator filter with improved transverse mode suppression |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US9859205B2 (en) | 2011-01-31 | 2018-01-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
| US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
| US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
| US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
| US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
| US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01295512A (en) | Manufacture of piezoelectric resonator | |
| US5117147A (en) | Piezoelectric vibrating device | |
| US5736911A (en) | Piezoelectric resonator with a resonance frequency adjusting notch | |
| JPH0652230U (en) | Piezoelectric vibrator | |
| US4017753A (en) | Shaped quartz crystal resonator | |
| JPH04127709A (en) | At cut crystal oscillator | |
| JPS6357967B2 (en) | ||
| JPH08125486A (en) | Piezoelectric vibrator | |
| JP2855208B2 (en) | LiTaO 3 Lower piezoelectric resonator | |
| JPS59193612A (en) | Piezoelectric resonator and its manufacture | |
| JPS6360617A (en) | Manufacture of piezoelectric ceramic resonator | |
| JPH0145771B2 (en) | ||
| JPH05218789A (en) | Piezoelectric resonator | |
| JPS60199211A (en) | Piezoelectric resonator | |
| RU2047268C1 (en) | Monolithic piezoelectric filter | |
| JPS6245206A (en) | Piezoelectric resonator | |
| JPS5936018Y2 (en) | piezoelectric vibrator | |
| US3717778A (en) | Piezoelectric ceramic resonator with asymmetrically rough edge | |
| JPH03139009A (en) | Miniature piezoelectric resonator | |
| JPS58127425A (en) | Piezoelectric element plate for oscillator and its manufacture | |
| JPH0463567B2 (en) | ||
| JPS5824503Y2 (en) | Width-slip crystal oscillator | |
| JPH06104684A (en) | Piezoelectric resonator | |
| JPS5912805Y2 (en) | Width shear oscillator | |
| JPS5822333Y2 (en) | Suishiyo Shindoushi |