JPH01262638A - Sucking pad - Google Patents

Sucking pad

Info

Publication number
JPH01262638A
JPH01262638A JP63092128A JP9212888A JPH01262638A JP H01262638 A JPH01262638 A JP H01262638A JP 63092128 A JP63092128 A JP 63092128A JP 9212888 A JP9212888 A JP 9212888A JP H01262638 A JPH01262638 A JP H01262638A
Authority
JP
Japan
Prior art keywords
substrate
handling
sucking pad
resin
suction pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63092128A
Other languages
Japanese (ja)
Inventor
Ichiro Kobayashi
一郎 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63092128A priority Critical patent/JPH01262638A/en
Publication of JPH01262638A publication Critical patent/JPH01262638A/en
Pending legal-status Critical Current

Links

Landscapes

  • Manipulator (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To prevent the electrostatic breakdown of an element on a substrate at the time of the handling of the substrate, etc., in the manufacture of a semiconductor by using a resin given conductivity. CONSTITUTION:When a sucking pad is molded by a natural rubber, a synthetic resin, a thermoplastic resin or a thermosetting resin, metallic powder, a metallic foil or a conductive high-molecular polymer is compounded with a raw material before molding as a compounding agent, and the sucking pad is molded. When the sucking pad is used for handling an silicon wafer and for handling a glass substrate, to which a transparent electrode composed of ITO, etc., is formed, breakdown by the static electricity of an element oil the substrate is not generated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体製造等の工程においてシリコンウェハ
ー、ガラス基板等のハンドリングに使用する吸着パッド
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a suction pad used for handling silicon wafers, glass substrates, etc. in processes such as semiconductor manufacturing.

〔従来の技術〕[Conventional technology]

従来の吸着パッドは、ゴム、ナイロン等の樹脂材料で構
成されているものが知られていた。
Conventional suction pads are known to be made of resin materials such as rubber and nylon.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、前述の従来技術では吸着パッドが吸着している
対象物からはなれるときに帯電し次の吸着するものに近
f寸いた時に、その対象物を帯電させ静電気破壊の原因
をつくると言う問題点を有する。そこで本発明はこのよ
うな問題点を解決するものでその目的は、半導体製造等
の工程においてシリコンウェハー、ガラス基板等のハン
ドリング時の基板上の素子の静電気破壊を防止すること
にある。
However, with the above-mentioned conventional technology, there is a problem in that when the suction pad separates from the object it is adsorbing, it becomes electrically charged, and when it approaches the next object to be adsorbed, it charges the object, causing electrostatic damage. Has a point. The present invention is intended to solve these problems, and its purpose is to prevent electrostatic damage to elements on substrates during handling of silicon wafers, glass substrates, etc. in semiconductor manufacturing processes.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の吸着パッドは、シリコンウェハー、ガラス基板
等のハンドリングに使用する吸着パッドにおいて、該吸
着パッドが導電性を付与した樹脂で形成されたことを特
徴とする。
The suction pad of the present invention is a suction pad used for handling silicon wafers, glass substrates, etc., and is characterized in that the suction pad is made of a resin imparted with conductivity.

〔作 用〕[For production]

ふたつの絶縁体または電気的に絶縁されている物を密着
させ、それらを引き離すとき辷それらは帯電する。半導
体製造等の工程においてシリコンウェハー、ガラス基板
等のバンドリング時には絶縁体である吸着パッドと絶縁
体であるシリコンウエバー、ガラス基板等は密着と離れ
ることを繰り返えしている。このためシリコンウェハー
、ガラス基板等には、かなりの分極電荷が存在するよう
になる。この分極電荷により、配線上に電荷が誘起され
る。この状態の時に配線がアースされたり、容量の大き
な導体に触れたりすると、電流が流れ素子が破壊される
。この防止策として、シリコンウェハー、ガラス基板等
を帯電させない一方法として、吸着パッドを導電性にす
れば絶縁体であるシリコンウェハー、ガラス基板等に電
荷を誘起させる絶縁体の電場が存在しなくなるため、シ
リコンウェハー、ガラス基板上等の分極電荷は存在しな
くなる。このため配線上に電荷が誘起されることもなく
なり素子の破壊も起らなくなる。
When two insulators or electrically insulated objects are brought into close contact and pulled apart, they become charged. BACKGROUND ART During bundling of silicon wafers, glass substrates, etc. in processes such as semiconductor manufacturing, suction pads, which are insulators, and silicon wafers, glass substrates, etc., which are insulators, repeatedly come into close contact and separate from each other. For this reason, silicon wafers, glass substrates, and the like come to have a considerable amount of polarized charge. This polarized charge induces charges on the wiring. If the wiring is grounded or touches a conductor with large capacity in this state, current will flow and the device will be destroyed. As a preventive measure, one way to prevent charging of silicon wafers, glass substrates, etc. is to make the suction pad conductive, since the electric field of the insulator that induces charges in the silicon wafer, glass substrate, etc., which is an insulator, will no longer exist. , polarized charges on silicon wafers, glass substrates, etc. no longer exist. Therefore, charges are not induced on the wiring, and the device does not break down.

〔実 施 例 1〕 天然ゴム、合成ゴム、熱可塑性樹脂、熱硬化性樹脂で吸
着パッドを成型する場合、成型前の原材料に配合剤とし
て、金属粉末または金属箔または導電性をもつ高分子ポ
リマーまたは導電性をもつ高分子モノマーまたは炭素ま
たは界面活性剤を工%〜90%配合し吸着パッドを成型
した。
[Example 1] When molding a suction pad using natural rubber, synthetic rubber, thermoplastic resin, or thermosetting resin, metal powder, metal foil, or conductive polymer is added as a compounding agent to the raw materials before molding. Alternatively, an adsorption pad was formed by blending a conductive polymer monomer, carbon, or surfactant in an amount of 90% to 90%.

〔実 施 例 2〕 天然ゴム、合成ゴム、熱可塑性樹脂、熱硬化性樹脂で吸
着パッドを形成した後、界面活性剤を表面に塗布し導電
性を付与した。
[Example 2] After a suction pad was formed from natural rubber, synthetic rubber, thermoplastic resin, and thermosetting resin, a surfactant was applied to the surface to impart conductivity.

〔実 施 例 3〕 天然ゴム、合成ゴム、熱可塑性樹脂、熱硬化性樹脂で吸
着パッドを形成した後表面に金属膜を形成し導電性を付
与した。
[Example 3] After a suction pad was formed using natural rubber, synthetic rubber, thermoplastic resin, or thermosetting resin, a metal film was formed on the surface to impart conductivity.

以上の各実施例の吸着パッドを、シリコンウェハーのハ
ンドリングや、ITO等の透明電極が形成されたガラス
基板のハンドリングに使用したが、基板上の素子の静電
気による破壊はなかった。
The suction pads of the above examples were used for handling silicon wafers and glass substrates on which transparent electrodes such as ITO were formed, but no elements on the substrate were destroyed by static electricity.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、吸着パッドに導電性
を付与することにより、二つの絶縁体が密着と離れるこ
とを繰り返す時に帯電して導体配線上に電荷のアンバラ
ンスを生じ、この状態の時導体配線がアースまたは容量
の大きな導体に接続されたときに起こる静電気破壊を防
ぐという優れた効果を有する。
As described above, according to the present invention, by imparting conductivity to the suction pad, when two insulators are repeatedly brought into close contact with each other and then separated from each other, they are charged, causing an imbalance of charge on the conductor wiring, and this state It has the excellent effect of preventing electrostatic damage that occurs when conductor wiring is connected to ground or a conductor with large capacity.

以上 出願人 セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation

Claims (1)

【特許請求の範囲】[Claims]  シリコンウェハー、ガラス基板等のハンドリングに使
用する吸着パッドにおいて、該吸着パッドが導電性を付
与した樹脂で形成されたことを特徴とする吸着パッド。
A suction pad used for handling silicon wafers, glass substrates, etc., characterized in that the suction pad is made of a resin imparted with conductivity.
JP63092128A 1988-04-14 1988-04-14 Sucking pad Pending JPH01262638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63092128A JPH01262638A (en) 1988-04-14 1988-04-14 Sucking pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63092128A JPH01262638A (en) 1988-04-14 1988-04-14 Sucking pad

Publications (1)

Publication Number Publication Date
JPH01262638A true JPH01262638A (en) 1989-10-19

Family

ID=14045798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63092128A Pending JPH01262638A (en) 1988-04-14 1988-04-14 Sucking pad

Country Status (1)

Country Link
JP (1) JPH01262638A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425100A (en) * 1990-05-16 1992-01-28 Nec Kyushu Ltd Suction pad
JPH0432888U (en) * 1990-07-11 1992-03-17
JPH0447989U (en) * 1990-08-28 1992-04-23
JPH0531694A (en) * 1991-06-20 1993-02-09 Fuji Photo Film Co Ltd Sucker
JPH07156035A (en) * 1993-11-17 1995-06-20 Ckd Corp Adsorbing plate of vacuum chuck and manufacture thereof
JP2007128967A (en) * 2005-11-01 2007-05-24 Shin Etsu Polymer Co Ltd Suction pad for semiconductor wafer
JP2007324449A (en) * 2006-06-02 2007-12-13 Shin Etsu Polymer Co Ltd Suction pad for semiconductor wafer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425100A (en) * 1990-05-16 1992-01-28 Nec Kyushu Ltd Suction pad
JPH0432888U (en) * 1990-07-11 1992-03-17
JPH0447989U (en) * 1990-08-28 1992-04-23
JPH0531694A (en) * 1991-06-20 1993-02-09 Fuji Photo Film Co Ltd Sucker
JPH07156035A (en) * 1993-11-17 1995-06-20 Ckd Corp Adsorbing plate of vacuum chuck and manufacture thereof
JP2007128967A (en) * 2005-11-01 2007-05-24 Shin Etsu Polymer Co Ltd Suction pad for semiconductor wafer
JP4675213B2 (en) * 2005-11-01 2011-04-20 信越ポリマー株式会社 Suction pad for semiconductor wafer
JP2007324449A (en) * 2006-06-02 2007-12-13 Shin Etsu Polymer Co Ltd Suction pad for semiconductor wafer

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