JPH01261815A - Manufacture of solid electrolytic capacitor - Google Patents
Manufacture of solid electrolytic capacitorInfo
- Publication number
- JPH01261815A JPH01261815A JP9001988A JP9001988A JPH01261815A JP H01261815 A JPH01261815 A JP H01261815A JP 9001988 A JP9001988 A JP 9001988A JP 9001988 A JP9001988 A JP 9001988A JP H01261815 A JPH01261815 A JP H01261815A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- paste
- solid electrolytic
- electrolytic capacitor
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 28
- 239000007787 solid Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000011888 foil Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 13
- 239000002904 solvent Substances 0.000 abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052709 silver Inorganic materials 0.000 abstract description 9
- 239000004332 silver Substances 0.000 abstract description 9
- 238000003756 stirring Methods 0.000 abstract description 9
- 239000013256 coordination polymer Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は、均一ですき間の無い導電体層が形成されてい
る固体電解コンデンサの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing a solid electrolytic capacitor in which a uniform conductive layer with no gaps is formed.
従来、固体電解コンデンサは、例えば折りたたまれた弁
金属エツチング箔に順次誘電体酸化皮膜層、半導体層お
よび導電ペーストからなる導電体層を形成し、さらに最
終的に外側に樹脂封口して実用に供されている。Conventionally, solid electrolytic capacitors have been manufactured by forming a conductor layer consisting of a dielectric oxide film layer, a semiconductor layer, and a conductive paste in order on a folded valve metal etched foil, and then finally sealing the outside with resin. has been done.
〔発明が解決しようとする０課題〕
しかしながら、従来の固体電解コンデンサの製造方法に
おいては、導電体層を形成する方法が、単に導電ペース
ト槽の１ｊｆｆｉペースト浴（以下ペースト浴という）
に固体電解コンアン＋１素子を浸漬するだけであったた
め、半導体層表面全域に導電体層が形成されず、極めて
不均一で、作製した固体電解コンデンサは、導電体層が
不均一であるためにｔａｎδが大きいという欠点をもっ
ていた。[0 Problems to be Solved by the Invention] However, in the conventional manufacturing method of solid electrolytic capacitors, the method for forming a conductive layer is simply a 1jffi paste bath (hereinafter referred to as paste bath) of a conductive paste tank.
Since the solid electrolytic capacitor was simply immersed in the solid electrolytic capacitor, a conductive layer was not formed over the entire surface of the semiconductor layer and was extremely non-uniform. It had the disadvantage of being large.
本発明は上記の事情に鑑み、ｉ電体層の形成に際して、
半導体層の表面全体に導電体層が均一に形成された固体
電解コンデンサの製造方法を提供することを目的とする
。In view of the above circumstances, the present invention provides the following steps when forming an i-electric layer:
It is an object of the present invention to provide a method for manufacturing a solid electrolytic capacitor in which a conductor layer is uniformly formed over the entire surface of a semiconductor layer.
前記の目的を達成するために、本発明の固体電解コンデ
ンサの製造方法においては、弁作用を有する金属箔から
なる陽極基一体の表面に、誘電体酸化皮膜層、半導体層
および導電ペーストからなる導電体層を順次形成して固
体電解コンデンサを製造する方法において、前記導電体
層が減圧状態で均一に撹拌され、かつ所定の粘度に保持
された導電ペースト浴中で含浸形成する。In order to achieve the above object, in the method for manufacturing a solid electrolytic capacitor of the present invention, a conductive layer consisting of a dielectric oxide film layer, a semiconductor layer and a conductive paste is provided on the surface of an anode base made of a metal foil having a valve action. In a method for manufacturing a solid electrolytic capacitor by sequentially forming body layers, the conductive layer is impregnated in a conductive paste bath that is uniformly stirred under reduced pressure and maintained at a predetermined viscosity.
その際、陽極基体の形状は、リード端子を有し、エツチ
ングされた金属箔の巻回体、或いは一ケ所以上をリード
端子によって電気的に接合された積層体がよく、また半
導体層は、二酸化鉛もしくは二酸化鉛と硫酸鉛とを主成
分とする層がよい。In this case, the shape of the anode substrate is preferably a winding body of etched metal foil having lead terminals, or a laminate body electrically connected at one or more places by lead terminals, and the semiconductor layer is formed of carbon dioxide. A layer containing lead or lead dioxide and lead sulfate as main components is preferable.
以下、本発明の固体電解コンデンサの製造方法について
説明する。Hereinafter, a method for manufacturing a solid electrolytic capacitor according to the present invention will be explained.
本発明の方法によって製造される固体電解コンデンサの
陽極として用いられる弁金属基体としては、例えば、ア
ルミニウム、タンタル、ニオブ、チタンおよびこれらを
基質とする合金等、弁作用を有する金属箔がいずれも使
用できる。As the valve metal substrate used as the anode of the solid electrolytic capacitor manufactured by the method of the present invention, any metal foil having a valve action can be used, such as aluminum, tantalum, niobium, titanium, and alloys using these as substrates. can.
陽極基体の形状は、陽極台Ｒ箔を折りたたんだもの、渦
巻状に巻回したもの、渦巻状に巻回したものを加圧して
扁平にしたもの、陽極金ｆｌ箔を積層にしたもの等従来
公知の形状のものがあげられるが、特にリード端子を有
し、エツチングされた陽極金属箔の巻回体もしくは一カ
所以上をリード端子によって電気的に接合された積層体
の形状が工業的に生産しやすく好都合である。しかし、
平板状の陽Ｉ４ｉ基体の場合には、従来の導電ペースト
層の形成方法で充分であるため、必ずしも本発明の方法
を使用する必要は無い。The shape of the anode substrate is conventional, such as folded anode base R foil, spirally wound, spirally wound and flattened by pressure, and laminated anode gold foil. These can be of any known shape, but in particular, the shape of a rolled body of etched anode metal foil with lead terminals or a laminate in which one or more parts are electrically connected by lead terminals is industrially produced. It is easy and convenient. but,
In the case of a flat positive I4i substrate, the conventional method for forming a conductive paste layer is sufficient, so it is not necessarily necessary to use the method of the present invention.
また、陽極基体表面の酸化皮ＷＡ層は基体自体の酸化物
層であってもよく、あるいは基体の表面上に設けられた
他の誘電体酸化物の層であってもよいが、弁金属自体の
酸化物から成る層であることが望ましい。Further, the oxide WA layer on the surface of the anode substrate may be an oxide layer of the substrate itself or another dielectric oxide layer provided on the surface of the substrate, but the valve metal itself The layer is preferably made of an oxide.
いずれの場合にも酸化物層を設ける方法としては、従来
公知の方法を用いることができる。In either case, a conventionally known method can be used to provide the oxide layer.
また、本発明において使用する半導体層は、従来公知の
ものが使用されるが、その中でも二酸化鉛もしくは、二
酸化鉛と硫酸鉛を主成分として、従来公知の化学的析出
法、あるいは電気化学的析出法で作製したものが好まし
いが特に本発明者等が特開昭６３−５１６２１号公報、
特開昭６２−１８５３０７号公報等で記載した方法で作
製したものが優れている。In addition, the semiconductor layer used in the present invention is a conventionally known one, and among them, lead dioxide or lead dioxide and lead sulfate are used as main components, and a conventionally known chemical deposition method or electrochemical deposition method is used. It is preferable to use a method prepared by the method, but in particular, the present inventor et al.
Those produced by the method described in JP-A-62-185307 and the like are excellent.
次いで、導電体層が形成されるが、導電体層は導電ペー
スト槽のペースト浴に、半導体層を形成した固体電解コ
ンデンサ素子を浸漬することによって形成される。Next, a conductive layer is formed by immersing the solid electrolytic capacitor element on which the semiconductor layer is formed into a paste bath of a conductive paste bath.
用いられるペースト浴としては、導電性の優れているも
のであれば、いずれも使用出来るが、特に銀の導電性が
よいことから銀ペースト浴が好適である。Any paste bath can be used as long as it has excellent conductivity, but a silver paste bath is particularly suitable because silver has good conductivity.
また、導電体層を形成する導電ペースト槽中のペースト
浴は、減圧状態で、均一に撹拌され、含有する溶媒酊の
調節によって銀ペーストの場合は５０〜２０万ＣＰの粘
度の範囲で所定値に保持することが肝要である。粘度が
５０ＣＰ未満では、作製した固体電解コンデンサの勧δ
値が大きくなり、２０万ＣＰを越えると導電体層の形成
が機械的に困難となる。In addition, the paste bath in the conductive paste tank that forms the conductive layer is under reduced pressure and uniformly stirred, and in the case of silver paste, the viscosity is set at a predetermined value in the range of 500,000 to 200,000 CP by adjusting the solvent content. It is important to maintain the If the viscosity is less than 50CP, the recommended solid electrolytic capacitor
When the value becomes large and exceeds 200,000 CP, it becomes mechanically difficult to form a conductive layer.
また減圧度は、固体電解コンデンサ素子中へ導電ペース
トを含浸させるために重要で、作製する固体電解コンデ
ンサ素子の大きさによって、使用する減圧度が変化する
ので、あらかじめ予備実験を行なって適性値が定められ
る。In addition, the degree of vacuum is important for impregnating the conductive paste into the solid electrolytic capacitor element, and the degree of vacuum to be used changes depending on the size of the solid electrolytic capacitor element to be manufactured, so preliminary experiments should be performed in advance to determine the appropriate value. determined.
前記導電ペースト槽中のペースト浴を減圧状態下で撹拌
し、所定の粘度に保持する装置としては、例えば第１図
に一例を示すものがあげられる。An example of an apparatus for stirring the paste bath in the conductive paste tank under reduced pressure and maintaining it at a predetermined viscosity is shown in FIG. 1, for example.
図中符号１は、真空ポンプ等の減圧装置２によって減圧
されるガラス容器である。このガラス容器１内には、ペ
ースト浴３ａが入れられた導電ペースト槽３が収納され
ている。このペースト浴３ａには、回転円板４ａを有す
る回転粘度検出器４が取付けられている。この回転粘度
検出器４は、ガラス容器１の外側に設けられた、溶媒タ
ンク５ａおよび調整バルブ５ｂを内蔵し、上・下限の設
定部を有する制御器５に接続されており、回転粘度検出
器４の信号に基づいて制御器５の指令によって、数秒間
、調整バルブ５ｂを開き溶媒タンク５ａの溶媒を溶媒導
管６を介して導電ペースト槽３に供給して、ペースト浴
３ａの粘度を所定゛の範囲に保持する。Reference numeral 1 in the figure is a glass container whose pressure is reduced by a pressure reducing device 2 such as a vacuum pump. This glass container 1 houses a conductive paste tank 3 containing a paste bath 3a. A rotational viscosity detector 4 having a rotating disk 4a is attached to this paste bath 3a. The rotational viscosity detector 4 includes a solvent tank 5a and an adjustment valve 5b provided on the outside of the glass container 1, and is connected to a controller 5 having upper and lower limit setting sections. Based on the signal No. 4, the control valve 5b is opened for several seconds in response to a command from the controller 5, and the solvent in the solvent tank 5a is supplied to the conductive paste tank 3 via the solvent conduit 6 to maintain the viscosity of the paste bath 3a at a predetermined level. Keep within the range.
また、ガラス容器１の下部にはマグネチックスターラフ
が設けられ、前記導電ペースト槽３内の回転子７ａを駆
動してペースト浴３ａを撹拌する。Further, a magnetic stirrer is provided at the bottom of the glass container 1, and drives the rotor 7a in the conductive paste tank 3 to stir the paste bath 3a.
前記回転粘度検出器４は、回転円板４ａの回転によって
ペースト浴３ａの粘度を検出するが、撹拌によるペース
ト浴３ａの流れが測定値に影響を与える。そのため、流
れを遮断する邪魔板を設けたり、或いは第２図に示すよ
うに回転円板４ａを窓付き邪魔板８内に入れて、ペース
ト浴３ａの流れが回転円板４ａに当るのを防止するのが
望ましい。The rotational viscosity detector 4 detects the viscosity of the paste bath 3a by rotating the rotating disk 4a, but the flow of the paste bath 3a due to stirring affects the measured value. Therefore, the flow of the paste bath 3a can be prevented from hitting the rotating disk 4a by providing a baffle plate to block the flow, or by placing the rotating disk 4a in a baffle plate 8 with a window as shown in FIG. It is desirable to do so.
前記装置を用いてペースト浴３ａの粘度を制御するには
、ガラス容器１内を実験によって定められた所定の減圧
度に保持し、均一撹拌すると、ペースト浴３ａ中の溶媒
は減少するため、粘度は上昇する方向となり、制御器５
の制御動作によって調整バルブ５ｂが開き、溶媒が溶媒
タンク５ａから溶媒導管６を介して供給され、ペースト
浴の粘度が上・下限の設定値内にコントロールされる。In order to control the viscosity of the paste bath 3a using the above-mentioned device, the inside of the glass container 1 is maintained at a predetermined degree of vacuum determined by experiment, and the solvent in the paste bath 3a is reduced by uniform stirring. is in the rising direction, and controller 5
The control valve 5b opens, the solvent is supplied from the solvent tank 5a through the solvent conduit 6, and the viscosity of the paste bath is controlled within the upper and lower set values.
なお調整バルブの開いている時間は数秒に設定されてい
るため、粘度は下限界以下となることはない。Note that since the opening time of the adjustment valve is set to several seconds, the viscosity never falls below the lower limit.
なお、撹拌にはマグネチックスターラを用いたが、従来
公知の機械的な撹拌機を用いてもよい。Although a magnetic stirrer was used for stirring, a conventionally known mechanical stirrer may also be used.
以上説明した方法で形成された導電体層は半導体の全表
面に均一に形成される。The conductor layer formed by the method described above is uniformly formed over the entire surface of the semiconductor.
このようにして作製された固体電解コンデンサ素子は、
樹脂ケースや金属ケースに収納したり、樹脂モールドし
て、フェノール樹脂やエポキシ樹脂等で封止される。The solid electrolytic capacitor element produced in this way is
It is stored in a resin case or metal case, or molded with resin and sealed with phenol resin, epoxy resin, etc.
以下、実施例および比較例を示して、本発明をさらに詳
しく説明する。Hereinafter, the present invention will be explained in more detail by showing Examples and Comparative Examples.
実施例１
長さ２ ｅｘ 、幅０．５ｃｍのアルミニウム箔を陽極
とし、交流により箔の表面に電気化学的にエツチング処
理した後、エツチングアルミニウム箔に陽極端子をかし
め付けし、陽極リード線を接続した。Example 1 An aluminum foil with a length of 2 ex and a width of 0.5 cm was used as an anode, and the surface of the foil was electrochemically etched using alternating current. The anode terminal was caulked to the etched aluminum foil and an anode lead wire was connected. did.
次いで、リン酸とリン酸アンモニウムの水溶液中で電気
化学的に処理してアルミナの酸化皮膜を形成し、低圧用
エツチングアルミニウム化成箔（約１０μＦ ／ ｃｉ
）を得た。この化成箔を巻回した後、化成箔の陽極リ
ード線以外の部分を酢酸鉛三水和物１．０モル／Ｊ水溶
液に浸漬した。この化成箔を陽極側に、通常のエツチン
グされていないアルミニウム箔を陰極側として、１５Ｖ
で電解酸化を行った。４時間後、化成箔上に形成された
二酸化鉛からなる半導体層を水洗して未反応物を除いた
後、乾燥した。Next, an alumina oxide film is formed by electrochemical treatment in an aqueous solution of phosphoric acid and ammonium phosphate, and a low-pressure etched aluminum chemical foil (approximately 10 μF/ci
) was obtained. After winding this chemically formed foil, the portion of the chemically formed foil other than the anode lead wire was immersed in a 1.0 mol/J aqueous solution of lead acetate trihydrate. This chemically formed foil was used as the anode side, and the ordinary unetched aluminum foil was used as the cathode side, and the voltage was set at 15V.
Electrolytic oxidation was performed. After 4 hours, the semiconductor layer made of lead dioxide formed on the chemically formed foil was washed with water to remove unreacted substances, and then dried.
次いで、導電ペースト槽に銀ペースト浴を入れた第１図
に示す装置を用い、前記半導体層まで形成した化成箔を
２０個用意し、陽極リード端子以外の部分を浸漬するよ
うにセットした侵、ガラス容器内を７００ｓ＋Ｈ（１、
銀ペースト浴の粘度を上限が１６０００ＣＰ、下限が１
５０００ＣＰに設定して制御して約５分間導電体層の形
成を行った。Next, using the apparatus shown in FIG. 1 in which a silver paste bath was placed in a conductive paste bath, 20 chemically formed foils with the semiconductor layer formed thereon were prepared, and a wafer was set so that the parts other than the anode lead terminals were immersed. Inside the glass container for 700s + H (1,
The upper limit of the viscosity of the silver paste bath is 16,000 CP, and the lower limit is 1.
The conductor layer was formed for about 5 minutes under control at a setting of 5000 CP.
本実施例においては、減圧装置としてハンディ−アスピ
レータ−をガラス容器にセットしたものを用い、また、
ペースト撹拌には銀ペースト浴に入れた回転子をマグネ
チックスターラで回転させる誘電撹拌する方法を採用し
た。又ペースト浴の粘度を検出しコントロールする回転
粘度検出器および制御器として株式会社マルコム製のペ
ーストコントロールユニットを使用し、この製品の制御
器以外をガラス容器に入れて作動させた。In this example, a handy aspirator set in a glass container was used as the pressure reducing device, and
For stirring the paste, a dielectric stirring method was adopted in which a rotor placed in a silver paste bath was rotated using a magnetic stirrer. A paste control unit manufactured by Malcolm Co., Ltd. was used as a rotational viscosity detector and controller for detecting and controlling the viscosity of the paste bath, and the components other than the controller of this product were placed in a glass container and operated.
以上の方法で形成した導電体層を乾燥した後、エポキシ
樹脂で封口処理して固体電解コンデンサを作製した。After drying the conductor layer formed by the above method, it was sealed with an epoxy resin to produce a solid electrolytic capacitor.
実施例２
実施例１と同様な化成箔を、酢酸鉛三水和物２゜４モル
／Ｊの水溶液と過硫酸アンモニウム４モル／Ｊの水溶液
の混合液に含浸し８０℃で３０分間反応させた。生じた
半導体層を水洗し、未反応物を除去し乾燥した。形成し
た半導体層は二酸化鉛が約２５ｗｔ％硫酸鉛が約７５ｗ
ｔ％からなることをＸ線分析および赤外分光分析より確
認した。次に実施例１と同様にして導電体層を形成し固
体電解コンデンサを作製した。Example 2 A chemically modified foil similar to Example 1 was impregnated with a mixed solution of an aqueous solution of 2.4 mol/J of lead acetate trihydrate and an aqueous solution of 4 mol/J of ammonium persulfate, and reacted at 80°C for 30 minutes. . The resulting semiconductor layer was washed with water, unreacted substances were removed, and dried. The formed semiconductor layer contains approximately 25wt of lead dioxide and approximately 75w of lead sulfate.
It was confirmed by X-ray analysis and infrared spectroscopy that it consisted of t%. Next, a conductive layer was formed in the same manner as in Example 1 to produce a solid electrolytic capacitor.
実施例３
実施例１と同じアルミニウム箔を長さ０．５ｃＲ幅０．
５ｃＩＲに４枚切にして重ね、端を陽極リード端子によ
ってかしめ付けし、電気的、機械的に接合し、相Ｅｑ体
を作製した。次いで、実施例２と同様にして半導体層、
導電体ｍ層を形成し、固体電解コンデンサを作製した。Example 3 The same aluminum foil as in Example 1 was made with a length of 0.5 c and a width of 0.5 c.
Four pieces of 5cIR were cut and stacked, the ends were caulked with an anode lead terminal, and they were electrically and mechanically joined to produce a phase Eq body. Next, in the same manner as in Example 2, a semiconductor layer,
A conductor m layer was formed to produce a solid electrolytic capacitor.
比較例１
導電体層を形成する際に、銀ペースト浴を減圧状態に保
持しなかった以外は実施例１と同じにして固体電解コン
デンサを作製した。Comparative Example 1 A solid electrolytic capacitor was produced in the same manner as in Example 1 except that the silver paste bath was not kept in a reduced pressure state when forming the conductor layer.
比較例２
銀ペースト浴の粘度コントロールを行なわなかった以外
は実施例１と同じにして固体電解コンデンサを作製した
。Comparative Example 2 A solid electrolytic capacitor was produced in the same manner as in Example 1 except that the viscosity of the silver paste bath was not controlled.
実施例１〜３、比較例１〜２において作製した固体電解
コンデンサ各々２０個について性能を測定し平均値を第
１表に示した。Performance was measured for each of 20 solid electrolytic capacitors manufactured in Examples 1 to 3 and Comparative Examples 1 to 2, and the average values are shown in Table 1.
第 １ 表
但し 傘 １２０１１２での値
＊傘 １０ＫＨｚでの値
（発明の効果）
以上述べたように、本発明の方法によれば導電ペースト
の付着が半導体層全域にわたり均一に形成されるため、
ｔａｎδ値の良好な固体電解コンデンサが作製できる。Table 1 However, Value at Umbrella 120112 * Value at Umbrella 10 KHz (Effects of the Invention) As described above, according to the method of the present invention, the conductive paste is uniformly deposited over the entire semiconductor layer.
A solid electrolytic capacitor with a good tan δ value can be manufactured.
第１図は導電ペースト浴を減圧状態下で撹拌し、ベース
ト浴の粘度を所定の値に保持する装置の一例を示す図、
第２図はペースト浴の撹拌による流れの影費を防止する
ための回転円板に取付けられた窓付き邪魔板の図である
。
１・・・ガラス容器、２・・・減圧装置、３・・・導電
ペースト槽、３ａ・・・導電ペースト浴（ペースト浴）
、４・・・回転粘度検出器、４ａ・・・回転円板、５・
・・制御器、５ａ・・・溶媒タンク、５ｂ・・・調整バ
ルブ、６・・・溶媒導管、７・・・マグネブツクスター
ラ、７ａ・・・回転子、８・・・窓付き邪魔板。FIG. 1 is a diagram showing an example of an apparatus for stirring a conductive paste bath under reduced pressure and maintaining the viscosity of the base bath at a predetermined value.
FIG. 2 is a diagram of a windowed baffle mounted on a rotating disk to prevent flow effects due to agitation of the paste bath. 1... Glass container, 2... Pressure reducing device, 3... Conductive paste tank, 3a... Conductive paste bath (paste bath)
, 4... Rotational viscosity detector, 4a... Rotating disk, 5...
...Controller, 5a...Solvent tank, 5b...Adjustment valve, 6...Solvent conduit, 7...Magnetic stirrer, 7a...Rotor, 8...Baffle plate with window.
Claims (3)
誘電体酸化皮膜層、半導体層および導電ペーストからな
る導電体層を順次形成して固体電解コンデンサを製造す
る方法において、前記導電体層が、減圧状態で均一に撹
拌され、かつ所定の粘度に保持された導電ペースト浴中
で含浸形成することを特徴とする固体電解コンデンサの
製造方法。(1) A method for manufacturing a solid electrolytic capacitor by sequentially forming a dielectric oxide film layer, a semiconductor layer, and a conductive layer consisting of a conductive paste on the surface of an anode substrate made of a metal foil having a valve action, wherein the conductive layer A method for manufacturing a solid electrolytic capacitor, which comprises impregnating and forming the solid electrolytic capacitor in a conductive paste bath that is uniformly stirred under reduced pressure and maintained at a predetermined viscosity.
グされた金属箔の巻回体もしくは一カ所以上をリード端
子によって電気的に接合された積層体である請求項１記
載の固体電解コンデンサの製造方法。(2) The solid electrolytic capacitor according to claim 1, wherein the shape of the anode substrate is a wound body of etched metal foil having lead terminals or a laminate having one or more places electrically connected by the lead terminals. manufacturing method.
主成分とする層である請求項１または２記載の固体電解
コンデンサの製造方法。(3) The method for manufacturing a solid electrolytic capacitor according to claim 1 or 2, wherein the semiconductor layer is a layer containing lead dioxide or lead dioxide and lead sulfate as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9001988A JPH01261815A (en) | 1988-04-12 | 1988-04-12 | Manufacture of solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9001988A JPH01261815A (en) | 1988-04-12 | 1988-04-12 | Manufacture of solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01261815A true JPH01261815A (en) | 1989-10-18 |
Family
ID=13986992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9001988A Pending JPH01261815A (en) | 1988-04-12 | 1988-04-12 | Manufacture of solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261815A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078230A (en) * | 2006-09-19 | 2008-04-03 | Tdk Corp | Manufacturing method of solid electrolytic capacitor |
| JP2008078224A (en) * | 2006-09-19 | 2008-04-03 | Tdk Corp | Manufacturing method of solid electrolytic capacitor, apparatus for adhering polymerizing liquid, and apparatus for adhering conductive paste |
| US8174820B2 (en) * | 2005-11-09 | 2012-05-08 | Murata Manufacturing Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| CN113990664A (en) * | 2020-07-27 | 2022-01-28 | 深圳市柏瑞凯电子科技股份有限公司 | Manufacturing method of laminated chip type solid aluminum electrolytic capacitor |
-
1988
- 1988-04-12 JP JP9001988A patent/JPH01261815A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8174820B2 (en) * | 2005-11-09 | 2012-05-08 | Murata Manufacturing Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| JP2008078230A (en) * | 2006-09-19 | 2008-04-03 | Tdk Corp | Manufacturing method of solid electrolytic capacitor |
| JP2008078224A (en) * | 2006-09-19 | 2008-04-03 | Tdk Corp | Manufacturing method of solid electrolytic capacitor, apparatus for adhering polymerizing liquid, and apparatus for adhering conductive paste |
| JP4692451B2 (en) * | 2006-09-19 | 2011-06-01 | Ｔｄｋ株式会社 | Method for manufacturing solid electrolytic capacitor, polymerization liquid adhesion device, and conductive paste adhesion device |
| CN113990664A (en) * | 2020-07-27 | 2022-01-28 | 深圳市柏瑞凯电子科技股份有限公司 | Manufacturing method of laminated chip type solid aluminum electrolytic capacitor |
| CN113990664B (en) * | 2020-07-27 | 2023-03-21 | 深圳市柏瑞凯电子科技股份有限公司 | Manufacturing method of laminated chip type solid aluminum electrolytic capacitor |
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