JPH01258248A - High-density information recording medium and recording and reproducing device thereof - Google Patents
High-density information recording medium and recording and reproducing device thereofInfo
- Publication number
- JPH01258248A JPH01258248A JP8673688A JP8673688A JPH01258248A JP H01258248 A JPH01258248 A JP H01258248A JP 8673688 A JP8673688 A JP 8673688A JP 8673688 A JP8673688 A JP 8673688A JP H01258248 A JPH01258248 A JP H01258248A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- information recording
- probe
- density information
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 239000000523 sample Substances 0.000 claims description 60
- 230000002441 reversible effect Effects 0.000 claims description 7
- 239000010416 ion conductor Substances 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 27
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000015654 memory Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、情報を高密度に記録することができる高密度
情報記録媒体と、この情報記録媒体に情報を高密度に記
録させることができるとともに、記録された情報を再生
ならびに消去することができる高密度情報記録再生装置
に関する。[Detailed description of the invention] [Object of the invention] (Industrial application field) The present invention provides a high-density information recording medium that can record information at high density, and a method for recording information on this information recording medium at high density. The present invention relates to a high-density information recording and reproducing device that is capable of recording, reproducing and erasing recorded information.
（従来の技術）
情報記録媒体としては、半導体メモリ、磁気テープ、磁
気ディスク、フロッピーディスク、光ディスクなどが実
用化されているが、近年、情報量の増大に伴い、情報記
録媒体の高記録密度化、大容量化への要求が高まってき
ている。(Prior art) Semiconductor memories, magnetic tapes, magnetic disks, floppy disks, optical disks, etc. have been put into practical use as information recording media, but in recent years, with the increase in the amount of information, the recording density of information recording media has become higher. , the demand for larger capacity is increasing.
このため、各種情報記録媒体において記録密度の向上が
図られているが、なかでも、光デイスクメモリはその高
い記録密度と容量の大きさから、近年、急速に実用化が
進められている。For this reason, attempts have been made to improve the recording density of various information recording media, and in particular, optical disk memories have been rapidly put into practical use in recent years due to their high recording density and large capacity.
しかしながら、光デイスクメモリはレーザ光を光学レン
ズで絞り込んで記録、再生を行うため、スポット径には
光の波長からくる限界があり、記録密度は約１０６〜１
０’ｂｌｔｓ／ｖイ程度が上限であると考えられている
。さらに高密度化するため、多値多層化への検討や、フ
ォトケミカルホールバーニング（ＰＩＩＩ３）を応用し
た光デイスクメモリの構想なども考えられるが、実用化
にはまだ難しいレベルにある。However, since optical disk memory performs recording and reproduction by narrowing down the laser beam with an optical lens, there is a limit to the spot diameter due to the wavelength of the light, and the recording density is approximately 106 to 1.
It is believed that the upper limit is approximately 0'blts/v. In order to achieve even higher densities, it is possible to consider multilevel multilayering and the concept of an optical disk memory that applies photochemical hole burning (PIII3), but it is still at a level that is difficult to put into practical use.
（発明が解決しようとする課題）
このように、情Ｎｉｉの増大に伴い、情報記録媒体の高
記録密度化、大容量化が要望されているが、情報記録媒
体の中でも高い記録密度と大容量を有している光デイス
クメモリにあっても、その記録密度は原理上約１０’〜
１０ ’ ｂ１ｔｓ／ ｍｊ程度が上限であり、更なる
高記録密度化、大容量化を図ることは困難である。(Problem to be Solved by the Invention) As described above, with the increase in social welfare, there is a demand for higher recording density and larger capacity of information recording media. Even if there is an optical disk memory with
The upper limit is about 10' b1ts/mj, and it is difficult to further increase the recording density and capacity.
したがって、情報記録媒体の更なる高記録密度化、大容
量化を図るためには、新たな原理に基づく情報記録媒体
を得ることが望ましい。Therefore, in order to further increase the recording density and capacity of information recording media, it is desirable to obtain information recording media based on a new principle.
本発明はかかる従来技術の課題を解決すべくなされたも
ので、分子単位で情報を記録することのできる高密度情
報記録媒体と、この高密度情報記録媒体への情報の記録
およびこの高密度情報記録媒体に記録された情報の再生
ならびに消去を行うことができる高密度情報記録再生装
置を提供することを目的とする。The present invention has been made to solve the problems of the prior art, and provides a high-density information recording medium capable of recording information in units of molecules, recording of information on this high-density information recording medium, and the high-density information recording medium. It is an object of the present invention to provide a high-density information recording and reproducing device that can reproduce and erase information recorded on a recording medium.
［発明の構成］
（課題を解決するための手段）
すなわち本発明の高密度情報記録媒体は、導電性基体層
と、この導電性基体層の少なくとも一面に形成された誘
電体層と、誘電体層の表面に形成され可逆的な構造変化
を生じて導電率が変化するイオン伝導性物質層とを有す
ることを特徴としている。[Structure of the Invention] (Means for Solving the Problems) That is, the high-density information recording medium of the present invention comprises a conductive base layer, a dielectric layer formed on at least one surface of the conductive base layer, and a dielectric layer. It is characterized by having an ion conductive material layer formed on the surface of the layer and causing a reversible structural change to change the conductivity.
また、本発明の高密度情報記録再生装置は、可逆的な構
造変化を生じて導電率が変化するイオン伝導性物質層を
有する高密度情報記録媒体との間にトンネル電流を発生
させるための少なくとも１本の探針と、情報信号に応じ
て探針と高密度情報記録媒体との間に流れるトンネル電
流の大きさを変化させイオン伝導性物質層に選択的に構
造変化を生じさせることにより情報を記録する記録手段
と、構造変化を生じたイオン伝導性物質層と探針との間
に流れるトンネル電流の大きさと構造変化を生じていな
いイオン伝導性物質層と探針との間に流れるトンネル電
流の大きさとの差異を検知して記録情報を再生する再生
手段と、探針と高密度情報記録媒体との間に記録時とは
逆方向の電流を流すことによりイオン伝導性物質層を単
一相状態に構造変化させて記録情報を消去する消去手段
とを具備することを特徴としている。Further, the high-density information recording/reproducing device of the present invention includes at least one method for generating a tunnel current between the high-density information recording medium and the high-density information recording medium having an ion-conductive material layer that undergoes a reversible structural change and changes in conductivity. Information is generated by selectively causing structural changes in the ion-conducting material layer by changing the magnitude of the tunnel current flowing between the probe and the high-density information recording medium depending on the information signal. and the magnitude of the tunnel current flowing between the ion conductive material layer that has undergone a structural change and the probe, and the tunnel that flows between the ion conductive material layer that has not undergone a structural change and the probe. A reproducing means detects the difference in the magnitude of the current and reproduces the recorded information, and a reproducing means that reproduces the recorded information by detecting the difference in the magnitude of the current, and a reproducing means that reproduces the recorded information by detecting the difference in the magnitude of the current, and the ion conductive material layer is simply It is characterized by comprising an erasing means for erasing recorded information by changing the structure to a one-phase state.
（作 用）
本発明の高密度情報記録媒体に用いるイオン伝導性物質
層は、電界（電流）の影響により可逆的に構造変化を生
じて導電率が変化する。すなわち、このイオン伝導性物
質層は通常状態では金属伝導に近い導電率を有するが、
一定値以上の電流を流すとイオン伝導性物質の結晶分子
中に生じたイオンが誘電体層に移動するために構造変化
を生じて電子に対しては絶縁状態となり、導電率が低下
する。そして、この構造変化は結晶分子単位で生じる。(Function) The ionically conductive material layer used in the high-density information recording medium of the present invention undergoes a reversible structural change under the influence of an electric field (current), resulting in a change in conductivity. In other words, this ion conductive material layer has a conductivity close to that of metal conductivity under normal conditions, but
When a current of more than a certain value is passed, ions generated in the crystal molecules of the ion-conducting substance move to the dielectric layer, causing a structural change and becoming insulated from electrons, resulting in a decrease in electrical conductivity. This structural change occurs in units of crystal molecules.
したがって、情報信号に応じてイオン伝導性物質層に流
れる電流の大きさを変化させ、イオン伝導性物質層に選
択的に構造変化を生じさせることにより情報を記録する
ことができる。このとき、イオン伝導性物質層の構造変
化は結晶分子単位で生じるため、高解像度で高密度な情
報記録が可能となる。Therefore, information can be recorded by changing the magnitude of the current flowing through the ion-conducting material layer in accordance with the information signal and selectively causing a structural change in the ion-conducting material layer. At this time, structural changes in the ion-conducting material layer occur in units of crystal molecules, making it possible to record information with high resolution and high density.
また、本発明の高密度情報記録再生装置は、可逆的な構
造変化を生じて導電率が変化するイオン伝導性物質層を
有する高密度情報記録媒体との間にトンネル電流を発生
させるための少なくとも １本の探針を有し、記録手段
は情報信号に応じて探針と高密度情報記録媒体との間に
流れるトンネル電流の大きさを変化させて、イオン伝導
性物質層に選択的に構造変化を生じさせる。このため、
イオン伝導性物質層には導電率の高い部分と低い部分と
が生じ、これが記録ビットとなる。Further, the high-density information recording/reproducing device of the present invention includes at least one method for generating a tunnel current between the high-density information recording medium and the high-density information recording medium having an ion-conductive material layer that undergoes a reversible structural change and changes in conductivity. The recording means has one probe, and the recording means changes the magnitude of the tunnel current flowing between the probe and the high-density information recording medium according to the information signal to selectively create a structure in the ion-conducting material layer. bring about change. For this reason,
The ionically conductive material layer has regions of high conductivity and regions of low conductivity, which become recording bits.
再生手段は、探針と高密度情報記録媒体との間に流れる
トンネル電流の大きさが、構造変化を生じたイオン伝導
性物質層と構造変化を生じていないイオン伝導性物質層
とで異なることから、この差異を検知してたとえば信号
の２値に対応させることにより記録情報を再生する。The reproducing means is such that the magnitude of the tunnel current flowing between the probe and the high-density information recording medium is different between the ion conductive material layer that has undergone a structural change and the ion conductive material layer that has not undergone a structural change. The recorded information is reproduced by detecting this difference and making it correspond to, for example, the binary value of the signal.
消去手段は、探針と高密度情報記録媒体との間に記録時
とは逆方向の電流を流すことによって、誘電体層へ移動
していたイオンをイオン伝導性物質層へ移動させ、イオ
ン伝導性物質層を単一相状態に構造変化させる。このた
め、イオン伝導性物質層の導電率は均一となり、記録情
報は消去される。The erasing means passes a current in the opposite direction to that during recording between the probe and the high-density information recording medium to move the ions that had been moving to the dielectric layer to the ion-conducting material layer, thereby reducing ion conduction. structurally changes the physical substance layer to a single phase state. Therefore, the conductivity of the ion conductive material layer becomes uniform, and the recorded information is erased.
したがって、本発明の高密度情報記録再生装置では、本
発明の高密度情報記録媒体を用いることにより、情報の
記録および再生に充分の余裕をもっても１００人口程度
の記録再生が可能となり、記録密度は１０” ｂｉｔｓ
／ ＋＋ｊに及び、飛躍的な記録密度の向上が達せられ
る。Therefore, in the high-density information recording and reproducing apparatus of the present invention, by using the high-density information recording medium of the present invention, recording and reproducing of about 100 people is possible even with sufficient margin for recording and reproducing information, and the recording density is 10” bits
/ ++j, and a dramatic improvement in recording density can be achieved.
（実施例） 以下、本発明の実施例について図面を用いて説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
実施例１
第１図は、本発明に基づく高密度情報記ｉ媒体の一実施
例を示す断面図である。Embodiment 1 FIG. 1 is a sectional view showing an embodiment of a high-density information storage i-medium according to the present invention.
同図に示すように、高密度情報記録媒体１は、たとえば
アルミニウム（＾１）を用いたディスク状の導電性基体
層２と、この導電性基体層２の一面に形成された厚さ１
０００人の一酸化けい素（ＳＩＯ）膜からなる誘電体層
３と、誘電体層３の表面に形成された厚さ １００人の
タングステンブロンズ（ｌｌｘ ＷＯ３、ただし、０（
Ｘ（１）膜からなるイオン伝導性物質層４とからなる。As shown in the figure, the high-density information recording medium 1 includes a disk-shaped conductive base layer 2 made of aluminum (^1), for example, and a layer having a thickness of 1 formed on one surface of the conductive base layer 2.
A dielectric layer 3 made of a silicon monoxide (SIO) film with a thickness of 100 tungsten bronze (llx WO3, but 0 (
It consists of an ion conductive material layer 4 made of an X(1) film.
このような構成の高密度情報記録媒体１においては、Ｓ
ＩＯ膜からなる誘電体層３は電子に対してはブロッキン
グ層となるが、イオン伝導体として特にＨ＋イオンの移
動に関与する。また１ＩｘＷ（ｈは、第２図に示すよう
に、酸素原子１０、タングステン原子１１および水素原
子１２とで、水素原子１２を中心としたペロブスカイト
構造をなしている。この構造は、電界（電流）の影響に
より水素原子１２が水素イオン（Ｈ＋）と電子（ｅ−）
とに電離し、このＨ＋イオンは、第３図に示す６個の酸
素原子１０と １個のタングステン原子１１により構成
される正八面体形六配位のＷＯ３１Ｂの間を動きやすい
特性を持つ。In the high-density information recording medium 1 having such a configuration, S
The dielectric layer 3 made of an IO film serves as a blocking layer for electrons, but as an ion conductor, it particularly participates in the movement of H+ ions. In addition, 1IxW (h is, as shown in Fig. 2, an oxygen atom 10, a tungsten atom 11, and a hydrogen atom 12, forming a perovskite structure centered on the hydrogen atom 12.This structure is caused by the electric field (current) Due to the influence of hydrogen atom 12 becomes hydrogen ion (H+) and electron (e-)
This H+ ion has the property of being able to easily move between the octahedral hexacoordinated WO31B formed by six oxygen atoms 10 and one tungsten atom 11 as shown in FIG.
そして、１ＩｘＷ（ｈ膜はこの状態では金属伝導に近い
導電率を示すが、電圧を印加し１１＋イオンが移動した
正八面体形六配位のＶ（ｈ膜では、電子に対しては絶縁
層となる。この１ＩｘＷＯ３からＷ（ｈへの構造変化は
、通常、１ｌｘＷ（ｈ膜に流れる電流の大きさがｐＡオ
ーダのときには生じないが、μＡオーダになると生じる
。In this state, the 1IxW(h film exhibits a conductivity close to that of metal conductivity, but when a voltage is applied, the octahedral hexacoordinated V(h film has an insulating layer for electrons. This structural change from 1IxWO3 to W(h does not normally occur when the magnitude of the current flowing through the 1lxW(h film is on the pA order), but occurs when it becomes on the μA order.
したがって、先端の鋭い探針を用い、この探針側にプラ
ス、高密度情報記録媒体の導電性基体層側にマイナスの
電圧を印加し、情報信号に応じて探針と１ＩｘＷ（ｈ膜
に流れる電流の大きさをｐＡオーダからμＡオーダに変
化させてＩＩｘＷ（ｈ膜に選択的に構造変化を生じさせ
ることにより、１ＩｘＷ（ｈ膜上に電子伝導度の異なる
部分を分子単位で形成することができる。Therefore, using a probe with a sharp tip, a positive voltage is applied to the probe side and a negative voltage is applied to the conductive base layer side of the high-density information recording medium. By changing the magnitude of the current from the pA order to the μA order and selectively causing a structural change in the IIxW(h film, it is possible to form portions with different electronic conductivities on the 1IxW(h film in molecular units). can.
すなわち、情報を記録することができる。That is, information can be recorded.
なお、本実施例では導電性基体層としてＡＩを用いたが
、他の導電性金属、導電性ガラスあるいは導電性高分子
化合物を用いても、同様の効果を得ることができる。ま
た、誘電体層としては、ＳＩＯ膜の他、酸化クロムと一
酸化けい素との混合物などのイオン伝導性の誘電体を用
いることができ、イオン伝導性物質層としては、タング
ステンブロンズ膜の他、ＩＩｘＷ（ｈのタングステン（
Ｗ）をモリブデン（Ｎｏ）で置換したものなどを用いる
ことができる。Although AI was used as the conductive base layer in this example, similar effects can be obtained by using other conductive metals, conductive glasses, or conductive polymer compounds. In addition to the SIO film, an ion-conducting dielectric such as a mixture of chromium oxide and silicon monoxide can be used as the dielectric layer. , IIxW (h of tungsten (
A material in which W) is replaced with molybdenum (No) can be used.
また、誘電体層およびイオン伝導性物質層の厚さは、い
ずれも数１０００人より薄いものであればよく、このよ
うな層は真空蒸着法やスパッタリングなどの物理的蒸着
法、あるいは陽極酸化などの公知の手段により、容易に
形成することができる。Further, the thickness of the dielectric layer and the ion conductive material layer need only be less than several thousand layers, and such layers can be formed by physical vapor deposition methods such as vacuum evaporation method or sputtering, or by anodic oxidation method. It can be easily formed by known means.
実施例２
第４図は、本発明の高密度情報記録再生装置の一実施例
を示す模式図である。Embodiment 2 FIG. 4 is a schematic diagram showing an embodiment of the high-density information recording/reproducing apparatus of the present invention.
同図に示すように、高密度情報記録再生装置２０は、電
界（電流）の影響により可逆的に構造変化を生じて導電
率が変化するイオン伝導性物質層を有する高密度情報記
録媒体２１を回転あるいは移動させるための記録媒体駆
動手段２２と、高密度情報記録媒体２１との間にトンネ
ル電流を発生させるための先端の鋭い探針２３とを有し
、この探針２３は、第４図中に示す２軸方向およびＸ軸
方向に対し粗動ならびに微動する探針制御手段２４．２
５．２６および２７により保持されている。そして、こ
れらは除振台２８上に固定されている。As shown in the figure, a high-density information recording/reproducing device 20 includes a high-density information recording medium 21 having an ion-conductive material layer whose structure changes reversibly under the influence of an electric field (current) and whose conductivity changes. It has a recording medium drive means 22 for rotating or moving it, and a sharp probe 23 for generating a tunnel current between the high-density information recording medium 21, and this probe 23 is shown in FIG. Probe control means 24.2 that coarsely and finely moves in the two-axis directions and the X-axis direction shown in the figure.
5.26 and 27. These are fixed on a vibration isolation table 28.
高密度記録のためには先端の鋭い探針２３が不可欠であ
り、本実施例ではタングステン針をアルカリ液でエツチ
ング成形したものを用い、探針２３の先端半径は約１０
ｒｖ以下である。A probe 23 with a sharp tip is essential for high-density recording, and in this embodiment, a tungsten needle etched with alkaline liquid is used, and the tip radius of the probe 23 is approximately 10 mm.
rv or less.
また、探針制御手段２４および２５は、探針２３と高密
度情報記録媒体２１とを入オーダで近接した状態に保つ
ためのものであり、探針２３はマイクロメータユニット
からなる探針制御手段２４によりｚ軸方向に粗動送りさ
れ、その後ピエゾ素子からなる探針制御手段２５によっ
て微動制御される。また探針制御手段２６および２７は
、探針２３を高密度情報記録媒体２１上の所定の位置に
移動させるためのものであり、探針２３はマイクロメー
タユニットからなる探針制御手段２６によりＸ軸方向に
粗動送りされ、その後ピエゾ素子からなる探針制御手段
２７によって微動制御される。このピエゾ素子は、積層
型のものを用い、約１ＯｕＩａの変位を可能にしている
。また、探針制御手段２４．２５．２６および２７は、
駆動回路に接続されている。Further, the probe control means 24 and 25 are for keeping the probe 23 and the high-density information recording medium 21 in a close state during ordering, and the probe 23 is a probe control means consisting of a micrometer unit. 24, the probe is coarsely moved in the z-axis direction, and then finely controlled by a probe control means 25 consisting of a piezo element. The probe control means 26 and 27 are for moving the probe 23 to a predetermined position on the high-density information recording medium 21, and the probe 23 is controlled by the probe control means 26 consisting of a micrometer unit. The probe is coarsely fed in the axial direction, and then finely controlled by the probe control means 27 made of a piezo element. This piezo element is of a laminated type and enables a displacement of about 1 OuIa. Further, the probe control means 24, 25, 26 and 27 are
Connected to the drive circuit.
このような構成の高密度情報記録再生装置により情報を
記録するには、まず、高密度情報記録媒体２１を記録媒
体駆動手段２２上の所定の位置にセットし、探針２３と
高密度情報記録媒体２１との距離が一定となるように、
探針制御手段２４および２５により探針２３の２軸方向
の位置を制御する。この制御は、探針２３側にプラス、
高密度情報記録媒体２１側にマイナスの電圧を印加して
、探針２３と高密度情報記録媒体２１との間にｐＡオー
ダのトンネル電流を流し、このトンネル電流が一定とな
るようにサーボ回路で探針制御手段２４および２５に電
圧を印加して、探針２３を２軸方向に移動させることに
より行うことができる。In order to record information using the high-density information recording and reproducing apparatus having such a configuration, first, the high-density information recording medium 21 is set at a predetermined position on the recording medium driving means 22, and the probe 23 and the high-density information recording medium 21 are set at a predetermined position on the recording medium driving means 22. So that the distance to the medium 21 is constant,
The probe control means 24 and 25 control the position of the probe 23 in two axial directions. This control is performed by adding a positive value to the probe 23 side,
By applying a negative voltage to the high-density information recording medium 21 side, a tunnel current of pA order is caused to flow between the probe 23 and the high-density information recording medium 21, and a servo circuit is used to keep this tunnel current constant. This can be done by applying voltage to the probe control means 24 and 25 to move the probe 23 in two axial directions.
次いで、探針２３と高密度情報記録媒体２１との距離を
一定とした状態で、記録媒体駆動手段２２と探針制御手
段２６および２７により、高密度情報記録媒体２１上に
探針２３を走査させ、情報信号に応じて探針２３と高密
度情報記録媒体２１との間に流れるトンネル電流の大き
さを変化させることにより、高密度情報記録媒体２１中
のイオン伝導性物質層に選択的に構造変化を生じさせて
、導電率の異なる部分を形成する。この導７は率の異な
る部分が、記録ビットとなる。Next, while keeping the distance between the probe 23 and the high-density information recording medium 21 constant, the probe 23 is scanned over the high-density information recording medium 21 by the recording medium driving means 22 and the probe control means 26 and 27. By changing the magnitude of the tunnel current flowing between the probe 23 and the high-density information recording medium 21 according to the information signal, the ion conductive material layer in the high-density information recording medium 21 is selectively charged. Structural changes occur to form sections with different conductivities. The portions of this lead 7 with different rates become recording bits.
トンネル電流の大きさを変化させる手段としては、
■ 情報信号に応じて、探針２３と高密度情報記録媒体
２１との間に印加する電圧の大きさを変化させることに
より、トンネル電流の大きさを変化させる方法、
■ トンネル電流の大きさは探針２３と高密度情報記録
媒体２１との距離に指数関数的に依存することから、情
報信号に応じて探針２３と高密度情報記録媒体２１との
距離を探針制御手段２５により変化させることにより、
トンネル電流の大きさを変化させる方法、のいずれを用
いてもよい。Means for changing the magnitude of the tunnel current include: (1) changing the magnitude of the voltage applied between the probe 23 and the high-density information recording medium 21 according to the information signal; (2) Since the magnitude of the tunneling current depends exponentially on the distance between the probe 23 and the high-density information recording medium 21, By changing the distance from the probe using the probe control means 25,
Any method of changing the magnitude of tunnel current may be used.
トンネル電流の大きさの変化は、高密度情報記録媒体２
１中のイオン伝導性物質層に選択的に構造変化を生じさ
せ得る変化量とする。すなわち、構造変化を生じさせな
いときには、探針２３と高密度情報記録媒体２１との距
離を一定とするために必要とするｐ＾オーダの電流を流
し、構造変化を生じさせるときには、μＡオーダの電流
を流することにより、イオン伝導性物質層に選択的に構
造変化を生じさせることができる。The change in the magnitude of the tunnel current is determined by the change in the magnitude of the tunnel current.
This is the amount of change that can selectively cause a structural change in the ion conductive material layer in 1. That is, when a structural change is not caused, a current of the p^ order, which is necessary to keep the distance between the probe 23 and the high-density information recording medium 21 constant, is passed, and when a structural change is caused, a current of the μA order is passed. By flowing , it is possible to selectively cause a structural change in the ion conductive material layer.
また、記録情報の再生は、第５図に示すように、情報が
記録された高密度情報記録媒体２１の表面と探針２３と
の距離Ａを、トンネル電流が検知できる程度まで近接さ
せ、この状態で高密度情報記録媒体２１上に探針２３を
走査させることによって、信号を再生することができる
。Furthermore, as shown in FIG. 5, reproduction of recorded information is carried out by bringing the distance A between the surface of the high-density information recording medium 21 on which information is recorded and the probe 23 close to the extent that a tunnel current can be detected. By scanning the probe 23 over the high-density information recording medium 21 in this state, the signal can be reproduced.
すなわち、記録部２９ではイオン伝導性物質層が構造変
化を生じているために、トンネル電流は高密度情報記録
媒体２１の表面を通って検出されず、ｐＡ以下のレベル
となる。しかしながら、記録部以外の部分３０ではイオ
ン伝導性物質層は構造変化を生じていないため、ｐＡオ
ーダのトンネル電流を検出することができる。また、高
密度情報記録媒体２１の表面と探針２３との距離Ａをよ
り近くすれば、記録部２９ではトンネル電流は高密度情
報記録媒体２１の表面を通って検出されず、ｐＡ以下の
レベルとなるが、記録部以外の部分３０ではトンネル電
流は指数関数的に増大し、ｎＡ〜μＡオーダの値となる
。この記録部２９と記録部以外の部分３０とのトンネル
電流の大きさの差異を検知し、これを信号のたとえば２
値に対応させることによって信号を再生する。That is, in the recording section 29, since the ion conductive material layer undergoes a structural change, the tunnel current is not detected through the surface of the high-density information recording medium 21, and is at a level below pA. However, in the portion 30 other than the recording section, the ion conductive material layer has not undergone any structural change, so a tunnel current on the order of pA can be detected. Furthermore, if the distance A between the surface of the high-density information recording medium 21 and the probe 23 is made closer, the tunnel current will not be detected in the recording section 29 through the surface of the high-density information recording medium 21, and the level will be lower than pA. However, in the portion 30 other than the recording section, the tunnel current increases exponentially and reaches a value on the order of nA to μA. The difference in the magnitude of the tunnel current between the recording portion 29 and the portion 30 other than the recording portion is detected, and this is detected as
Regenerate the signal by matching it to a value.
このとき、たとえば１ｂｌｔが１００人口の記録スポッ
トとすると、１０” ｂｕｓ／ ｍｄの記録密度を得る
ことができる。At this time, for example, if 1 blt is a recording spot with a population of 100, a recording density of 10'' bus/md can be obtained.
また、精密なトラッキングサーボをかけることにより、
さらに高密度な記録も可能である。この場合の一方式と
しては、サーボ用探針と信号検出用探針の２本の探針を
持つ構造で制御する方法が挙げられる。In addition, by applying precise tracking servo,
Even higher density recording is also possible. In this case, one method is to perform control using a structure having two probes, a servo probe and a signal detection probe.
さらに、消去に関しては、）ＩｘＷ（ｈ膜はｆｉｘ Ｗ
Ｏ３Ｈ” ＋ ｅ−＋ＷＯ３という構造変化に対して可
逆的な性質を有するので、探針と高密度情報記録媒体と
の間に記録時とは逆方向の電流を供給し、イオン伝導性
物質層を１１ｘｗ０３の単一相状態に構造変化させるこ
とにより、記録情報を消去することができる。このとき
、記録の消し残しを防止するために、消去用探針には記
録再生用探針よりも先端の太い探針を用いることが望ま
しい。Furthermore, regarding erasing, )IxW(h film is fix W
O3H" + e-+WO3 has a reversible property, so a current is supplied between the probe and the high-density information recording medium in the opposite direction to that during recording, and the ionic conductive material layer is Recorded information can be erased by changing the structure to a single phase state of 11xw03.At this time, in order to prevent unerased records, the erasing probe has a tip that is lower than the recording/reproducing probe. It is desirable to use a thick probe.
なお、実施例１および実施例２では、高密度情報記録媒
体はディスク状のものとして扱っているが、その形状は
ドラム状やテープ状など、装置の構成によって適宜変更
可能である。たとえば、（光）カード状の記録媒体に応
用する場合、１〜２Ｉｌ／ｓｅｃの低速で記録ヘッドを
走査させたとしても、通常の１００倍もの転送レートが
得られる。In the first and second embodiments, the high-density information recording medium is treated as a disc-shaped medium, but its shape can be changed as appropriate depending on the configuration of the apparatus, such as a drum-shape or a tape-shape. For example, when applied to an (optical) card-shaped recording medium, even if the recording head is scanned at a low speed of 1 to 2 Il/sec, a transfer rate 100 times the normal rate can be obtained.
このように、本発明の高密度情報記録媒体は情報を分子
単位で記録することができ、また、本発明の高密度情報
記録再生装置は高密度情報記録媒体に分子単位で情報を
記録させることができるとともに、この記録情報を再生
ならびに消去することができる。As described above, the high-density information recording medium of the present invention can record information in units of molecules, and the high-density information recording and reproducing apparatus of the present invention can record information in units of molecules on the high-density information recording medium. This recorded information can be reproduced and erased.
［発明の効果］
以上説明したように、本発明によれば、従来に比して飛
躍的に記録密度が向上された高密度情報記録媒体と、こ
の高密度情報記録媒体への情報の記録および記録情報の
再生ならびに消去を行うことができる高密度情報記録再
生装置を得ることができる。[Effects of the Invention] As explained above, according to the present invention, there is provided a high-density information recording medium whose recording density has been dramatically improved compared to the conventional one, and the method for recording information on this high-density information recording medium. A high-density information recording and reproducing device that can reproduce and erase recorded information can be obtained.
第１図は本発明の高密度情報記録媒体の一実施例を示す
断面図、第２図および第３図は本発明の高密度情報記録
媒体に用いるイオン伝導性物質の一例の構造を示す図、
第４図は本発明の高密度情報記録再生装置の一実施例を
示す模式図、第５図は高密度情報記録媒体と探針との位
置関係を示す模式図である。
１．２１・・・高密度情報記録媒体
２・・・・・・・・・導電性基体層
３・・・・・・・・・誘電体層
４・・・・・・・・・イオン伝導性物質層２０・・・・
・・・・・高密度情報記録再生装置２３・・・・・・・
・・探針
出願人 株式会社 東芝
代理人 弁理士 須 山 佐 −
第１図
、互２：
？］３コ
々
第４図FIG. 1 is a cross-sectional view showing an embodiment of the high-density information recording medium of the present invention, and FIGS. 2 and 3 are diagrams showing the structure of an example of an ion-conductive material used in the high-density information recording medium of the present invention. ,
FIG. 4 is a schematic diagram showing an embodiment of the high-density information recording/reproducing apparatus of the present invention, and FIG. 5 is a schematic diagram showing the positional relationship between the high-density information recording medium and the probe. 1.21 High-density information recording medium 2 Conductive base layer 3 Dielectric layer 4 Ion conduction Sexual substance layer 20...
...High-density information recording and reproducing device 23...
...Probe applicant Toshiba Corporation Patent attorney Sasa Suyama - Figure 1, Mutual 2: ? ]3 pieces Figure 4
Claims (2)
一面に形成された誘電体層と、前記誘電体層の表面に形
成され可逆的な構造変化を生じて導電率が変化するイオ
ン伝導性物質層とを有することを特徴とする高密度情報
記録媒体。(1) A conductive base layer, a dielectric layer formed on at least one surface of the conductive base layer, and an ionic conductor formed on the surface of the dielectric layer that undergoes a reversible structural change and changes in conductivity. 1. A high-density information recording medium, comprising a magnetic material layer.
ン伝導性物質層を有する高密度情報記録媒体との間にト
ンネル電流を発生させるための少なくとも１本の探針と
、情報信号に応じて前記探針と前記高密度情報記録媒体
との間に流れるトンネル電流の大きさを変化させ前記イ
オン伝導性物質層に選択的に構造変化を生じさせること
により情報を記録する記録手段と、構造変化を生じた前
記イオン伝導性物質層と前記探針との間に流れるトンネ
ル電流の大きさと構造変化を生じていない前記イオン伝
導性物質層と前記探針との間に流れるトンネル電流の大
きさとの差異を検知して記録情報を再生する再生手段と
、前記探針と前記高密度情報記録媒体との間に記録時と
は逆方向の電流を流すことにより前記イオン伝導性物質
層を単一相状態に構造変化させて記録情報を消去する消
去手段とを具備することを特徴とする高密度情報記録再
生装置。(2) At least one probe for generating a tunnel current between a high-density information recording medium having an ion-conductive material layer that undergoes a reversible structural change and changes in conductivity, and an information signal. a recording means for recording information by selectively causing a structural change in the ion-conducting material layer by changing the magnitude of a tunnel current flowing between the probe and the high-density information recording medium; The magnitude of the tunnel current flowing between the ion conductive material layer that has undergone a structural change and the probe, and the magnitude of the tunnel current that flows between the ion conductive material layer that has not undergone a structural change and the probe. and a reproducing means for reproducing recorded information by detecting the difference between the ion conductive material layer and the ion conductive material layer by passing a current in a direction opposite to that during recording between the probe and the high density information recording medium. 1. A high-density information recording/reproducing apparatus comprising: erasing means for erasing recorded information by structurally changing it to a one-phase state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8673688A JP2774506B2 (en) | 1988-04-08 | 1988-04-08 | High density information recording medium and recording / reproducing apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8673688A JP2774506B2 (en) | 1988-04-08 | 1988-04-08 | High density information recording medium and recording / reproducing apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01258248A true JPH01258248A (en) | 1989-10-16 |
| JP2774506B2 JP2774506B2 (en) | 1998-07-09 |
Family
ID=13895103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8673688A Expired - Fee Related JP2774506B2 (en) | 1988-04-08 | 1988-04-08 | High density information recording medium and recording / reproducing apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2774506B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03203839A (en) * | 1989-12-29 | 1991-09-05 | Canon Inc | Recording and reproducing device |
-
1988
- 1988-04-08 JP JP8673688A patent/JP2774506B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03203839A (en) * | 1989-12-29 | 1991-09-05 | Canon Inc | Recording and reproducing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2774506B2 (en) | 1998-07-09 |
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