JPH0125487B2 - - Google Patents

Info

Publication number
JPH0125487B2
JPH0125487B2 JP24764183A JP24764183A JPH0125487B2 JP H0125487 B2 JPH0125487 B2 JP H0125487B2 JP 24764183 A JP24764183 A JP 24764183A JP 24764183 A JP24764183 A JP 24764183A JP H0125487 B2 JPH0125487 B2 JP H0125487B2
Authority
JP
Japan
Prior art keywords
epoxy resin
curing
parts
weight
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP24764183A
Other languages
Japanese (ja)
Other versions
JPS60140884A (en
Inventor
Katsumi Shimada
Tooru Nishimura
Tadaaki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP58247641A priority Critical patent/JPS60140884A/en
Publication of JPS60140884A publication Critical patent/JPS60140884A/en
Publication of JPH0125487B2 publication Critical patent/JPH0125487B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Epoxy Resins (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は光半導体素子を封止するために用いら
れる光半導体封止用エポキシ樹脂組成物に関する
ものである。 光半導体素子の封止材料としては、透明な硬化
物を与えるものであることが要求され、この目的
に対して酸無水物系硬化剤を用いたエポキシ樹脂
組成物が好適であることが知られている。この種
の組成物では、酸無水物系硬化剤とともに第三級
アミン、イミダゾール類、有機金属錯塩などの硬
化促進剤を併用して、硬化速度の向上を図つてい
る。 ところが、かかる従来のエポキシ樹脂組成物に
おいては、速硬化とするために硬化温度を上げた
り、硬化促進剤の量を多くしたりすると、硬化物
が黄色に変色して光半導体素子の封止材料として
使用に供しえなくなる問題を有していた。 この発明者らは、上述の如き問題を回避するた
めに鋭意検討した結果、硬化促進剤としてある種
の含硫リン化合物を特定量使用したときに、速硬
化性であると同時に硬化物の変色が抑えられた封
止材料が得られることを知り、この発明を完成す
るに至つたものである。 即ち本発明はビスフエノール型エポキシ樹脂お
よび/または脂環式エポキシ樹脂を主体とするエ
ポキシ樹脂と、酸無水物系硬化剤よりなるエポキ
シ樹脂系に、該硬化剤100重量部当り、下記一般
式〔〕で示される含流リン化合物0.2〜10重量
部を含有させてなる光半導体封止用エポキシ樹脂
組成物に関するものである。 (式中Rは炭素数1〜17の1価の有機基、 R′は炭素数1〜12の1価の有機基で ある。) この発明においては前記含硫リン化合物を酸無
水物系硬化剤100重量部に対して一般的に0.2〜10
重量部の割合で使用する。上記より多くなると、
硬化剤の着色化を防止できなくなるからである。
上記範囲内においては、その使用量を多くするほ
ど速硬化性となり、また硬化物の着色化は生じな
い。一方少なすぎると硬化促進効果が劣るように
なる。上記の使用量は好適には0.5〜4.0重量部で
ある。 本発明において、前記一般式で示される含硫リ
ン化合物のRとしては1価の炭化水素基が好まし
く、Rの炭素数としては3〜8が好ましい。 またR′としては1価の炭化水素基が好ましく、
R′の炭素数としては、1〜5が好ましい。 前記一般式〔〕で示される含硫リン化合物と
しては、代表的には、テトラメチルホスホニウム
ジエチルジチオリン酸、テトラエチルホスホニウ
ムジブチルジチオリン酸、テトラブチルホスホニ
ウムジエチルジチオリン酸等を挙げることができ
る。 この発明に使用されるエポキシ樹脂は、ビスフ
エノール型エポキシ樹脂および/または脂環式エ
ポキシ樹脂よりなるものが透明であるため好まし
いが、場合により他のエポキシ樹脂を併用するこ
ともできる。 その場合、他のエポキシ樹脂の使用量は、通常
全エポキシ樹脂中の50重量%以内とされる。 また本発明において用いられるエポキシ樹脂と
しては、エポキシ当量100〜1000、軟化点120℃以
下のものが一般的に用いられる。 この発明において用いられる酸無水物系硬化剤
としては、分子量140〜200程度のものが好ましく
用いられ、その例としてはヘキサヒドロ無水フタ
ル酸、テトラヒドロ無水フタル酸、メチルヘキサ
ヒドロ無水フタル酸、メチルテトラヒドロ無水フ
タル酸などの無色ないし淡黄色の酸無水物を挙げ
ることができる。この酸無水物の使用量は、エポ
キシ樹脂100重量部に対して通常50〜200重量部程
度である。 この発明の光半導体封止用エポキシ樹脂組成物
は、上記のエポキシ樹脂、酸無水物系硬化剤およ
び含硫リン化合物のほか、必要に応じて染料、可
撓性付与剤、変性剤、変色防止剤、老化防止剤、
離型剤、反応性ないし非反応性の希釈剤などの従
来公知の添加剤を含ませることができる。 この発明の組成物は、前記エポキシ樹脂、酸無
水物系硬化剤、含硫リン化合物、その他添加剤
を、常温ないし加温下で均一に混合して得ること
ができ、この均一混合物を用いて注型あるいはト
ランスフアー成型等により光半導体素子を被覆モ
ールドして光半導体装置とすることができる。 本発明は以上の如く、特定のエポキシ樹脂、酸
無水物系硬化剤および含硫リン化合物を含む光半
導体封止用エポキシ樹脂組成物であるので、光半
導体素子の樹脂封止に当つて、160℃以下の硬化
温度においてほとんど変色のない透明性のすぐれ
る硬化物を与え、また、80〜120℃の低温領域で
も硬化促進剤の添加量を増すことによつて30〜90
分程度の短時間で硬化し型からの離型が可能であ
り、硬化物も変色のない透明品が得られ、さらに
これを160℃以下にて後硬化を行なつても変色せ
ず透明性に非常にすぐれたものとなる。 つぎに、この発明の実施例を記載する。以下に
おいて、部とあるのは重量部を意味するものとす
る。 実施例 1 EP−828(油化シエルエポキシ社製のビスフエ
ノールA型エポキシ樹脂)100部に、4−メチル
ヘキサヒドロ無水フタル酸90部および後記第1表
に示される配合部数のテトラブチルホスフオニウ
ムジエチルジチオリン酸(以下TBPという)を
配合し、均一に混合してこの発明の光半導体封止
用エポキシ樹脂組成物とした。 比較例 TBPの代りに1・3・5−トリスジメチルア
ミノフエノールあるいは2−エチル−4−メチル
イミダゾールを後記第1表に示される配合部数で
使用した以外は、実施例1と同様にして光半導体
封止用エポキシ樹脂組成物を得た。 上記実施例1および比較例の各組成物を、径5
mm高さ8mmの形状からなるケースに注型し100〜
150℃で硬化させたときの離型可能時間(硬化速
度の良否)を測定し一次硬化性として評価した。
その結果を下記第1表に記載する。 また各組成物の変色性を調べるため、第1表に
記載する条件で初期硬化後、120℃で16時間、後
硬化処理を行なつて硬化物を得、この硬化物の変
色度合を目視により観察した。 その結果を下記第1表に記載する。
The present invention relates to an epoxy resin composition for encapsulating an optical semiconductor element used for encapsulating an optical semiconductor element. Encapsulation materials for optical semiconductor devices are required to provide transparent cured products, and it is known that epoxy resin compositions using acid anhydride curing agents are suitable for this purpose. ing. In this type of composition, a curing accelerator such as a tertiary amine, imidazoles, or an organic metal complex salt is used together with an acid anhydride curing agent to improve the curing speed. However, in such conventional epoxy resin compositions, when the curing temperature is increased or the amount of curing accelerator is increased to achieve rapid curing, the cured product turns yellow and becomes a encapsulating material for optical semiconductor devices. There was a problem that it could no longer be used as a standard. As a result of intensive studies to avoid the above-mentioned problems, the inventors found that when a specific amount of a certain sulfur-containing phosphorus compound was used as a curing accelerator, it was possible to cure quickly and at the same time change the color of the cured product. It was discovered that it was possible to obtain a sealing material with suppressed oxidation, and this led to the completion of this invention. That is, the present invention applies the following general formula [ The present invention relates to an epoxy resin composition for encapsulating optical semiconductors containing 0.2 to 10 parts by weight of a flow-containing phosphorus compound represented by the following. (In the formula, R is a monovalent organic group having 1 to 17 carbon atoms, and R' is a monovalent organic group having 1 to 12 carbon atoms.) In this invention, the sulfur-containing phosphorus compound is cured with an acid anhydride. Generally 0.2 to 10 per 100 parts by weight of agent
Use parts by weight. If it is more than the above,
This is because it becomes impossible to prevent the curing agent from becoming colored.
Within the above range, the larger the amount used, the faster the curing will be, and the cured product will not be colored. On the other hand, if it is too small, the curing accelerating effect will be poor. The above usage amount is preferably 0.5 to 4.0 parts by weight. In the present invention, R in the sulfur-containing phosphorus compound represented by the above general formula is preferably a monovalent hydrocarbon group, and R preferably has 3 to 8 carbon atoms. Furthermore, R' is preferably a monovalent hydrocarbon group,
The number of carbon atoms in R' is preferably 1 to 5. Typical examples of the sulfur-containing phosphorus compound represented by the general formula [] include tetramethylphosphonium diethyldithiophosphoric acid, tetraethylphosphonium dibutyldithiophosphoric acid, and tetrabutylphosphonium diethyldithiophosphoric acid. The epoxy resin used in the present invention is preferably a bisphenol type epoxy resin and/or an alicyclic epoxy resin because it is transparent, but other epoxy resins may be used in combination depending on the case. In that case, the amount of other epoxy resins used is usually within 50% by weight of the total epoxy resin. Further, as the epoxy resin used in the present invention, one having an epoxy equivalent of 100 to 1000 and a softening point of 120° C. or lower is generally used. The acid anhydride curing agent used in this invention preferably has a molecular weight of about 140 to 200, examples of which include hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. Examples include colorless to pale yellow acid anhydrides such as phthalic acid. The amount of acid anhydride used is usually about 50 to 200 parts by weight per 100 parts by weight of the epoxy resin. The epoxy resin composition for encapsulating optical semiconductors of the present invention contains, in addition to the above-mentioned epoxy resin, acid anhydride curing agent, and sulfur-containing phosphorus compound, a dye, a flexibility imparting agent, a modifier, and a discoloration preventive agent as necessary. agent, anti-aging agent,
Conventionally known additives such as a mold release agent and a reactive or non-reactive diluent can be included. The composition of the present invention can be obtained by uniformly mixing the epoxy resin, acid anhydride curing agent, sulfur-containing phosphorus compound, and other additives at room temperature or heating, and using this uniform mixture. An optical semiconductor device can be obtained by covering and molding an optical semiconductor element by casting, transfer molding, or the like. As described above, the present invention is an epoxy resin composition for encapsulating optical semiconductors containing a specific epoxy resin, an acid anhydride curing agent, and a sulfur-containing phosphorus compound. By increasing the amount of curing accelerator, a cured product with excellent transparency with almost no discoloration can be obtained at a curing temperature of 80 to 120 degrees Celsius or lower.
It cures in a short time of about minutes and can be released from the mold, and the cured product can be transparent without discoloration, and even after post-curing at 160℃ or less, it remains transparent without discoloration. It will be of very good quality. Next, examples of this invention will be described. In the following, "parts" means parts by weight. Example 1 100 parts of EP-828 (bisphenol A type epoxy resin manufactured by Yuka Ciel Epoxy Co., Ltd.), 90 parts of 4-methylhexahydrophthalic anhydride, and tetrabutylphosphonium in the amount shown in Table 1 below. Diethyldithiophosphoric acid (hereinafter referred to as TBP) was blended and mixed uniformly to obtain an epoxy resin composition for encapsulating optical semiconductors of the present invention. Comparative Example An optical semiconductor was produced in the same manner as in Example 1, except that 1,3,5-trisdimethylaminophenol or 2-ethyl-4-methylimidazole was used in the amount shown in Table 1 below. An epoxy resin composition for sealing was obtained. Each of the compositions of Example 1 and Comparative Example above was prepared with a diameter of 5
Cast into a case with a height of 8mm and 100~
The releasable time (accuracy of curing speed) when cured at 150°C was measured and evaluated as primary curing property.
The results are listed in Table 1 below. In addition, in order to examine the discoloration of each composition, after initial curing under the conditions listed in Table 1, a post-curing treatment was performed at 120°C for 16 hours to obtain a cured product, and the degree of discoloration of this cured product was visually observed. Observed. The results are listed in Table 1 below.

【表】 上記第1表において、一次硬化性は、離型可能
時間を5分毎にチエツクし、クラツクが入らず型
より離型できた時間を調べた。 また第1表における変色性の評価の基準は次の
通りである。 A………無色透明 B………わずかに黄色がかつている。 C………少し黄変 D………黄変 実施例 2 実施例1で用いたTBPの代りにテトラプロピ
ルホスホニウムジエチルジチオリン酸、テトラヘ
キシルホスホニウムジブチルジチオリン酸を各々
用いると共に4−メチルヘキサヒドロ無水フタル
酸の代りにヘキサヒドロ無水フタル酸を用い、他
は実施例1と同様の要領で組成物を製造し評価し
たところ実施例1とほぼ同様の結果が得られた。 実施例 3 実施例1で用いたEP828の代りに指環式エポキ
シ樹脂〔エポキシ当量154、粘度230センチポイズ
(25℃での測定値)〕を用い、他は実施例1と同様
の要領で組成物を製造し評価したところ、実施例
1とほぼ同様の結果が得られた。
[Table] In Table 1 above, the primary curing property was determined by checking the releasable time every 5 minutes and determining the time required to release the mold from the mold without cracking. Further, the criteria for evaluation of discoloration in Table 1 are as follows. A: Colorless and transparent B: Slightly yellowish. C: Slight yellowing D: Yellowing Example 2 Tetrapropylphosphonium diethyldithiophosphoric acid and tetrahexylphosphonium dibutyldithiophosphoric acid were used in place of TBP used in Example 1, and 4-methylhexahydrophthalanhydride was used. A composition was produced and evaluated in the same manner as in Example 1 except that hexahydrophthalic anhydride was used instead of the acid, and almost the same results as in Example 1 were obtained. Example 3 A ring-type epoxy resin [epoxy equivalent: 154, viscosity: 230 centipoise (measured value at 25°C)] was used instead of EP828 used in Example 1, and the composition was otherwise prepared in the same manner as in Example 1. When manufactured and evaluated, almost the same results as in Example 1 were obtained.

Claims (1)

【特許請求の範囲】 1 ビスフエノール型エポキシ樹脂および/また
は脂環式エポキシ樹脂を主体とするエポキシ樹脂
と酸無水物系硬化剤よりなるエポキシ樹脂系に、
該硬化剤100重量部当り、下記一般式〔〕で示
される含硫リン化合物0.2〜10重量部を含有させ
てなる光半導体封止用エポキシ樹脂組成物。 (式中Rは炭素数1〜17の1価の有機基、 R′は炭素数1〜12の1価の有機基で ある。)
[Claims] 1. An epoxy resin system consisting of an epoxy resin mainly consisting of a bisphenol epoxy resin and/or an alicyclic epoxy resin and an acid anhydride curing agent,
An epoxy resin composition for encapsulating optical semiconductors containing 0.2 to 10 parts by weight of a sulfur-containing phosphorus compound represented by the following general formula [] per 100 parts by weight of the curing agent. (In the formula, R is a monovalent organic group having 1 to 17 carbon atoms, and R' is a monovalent organic group having 1 to 12 carbon atoms.)
JP58247641A 1983-12-28 1983-12-28 Epoxy resin composite for optical semiconductor sealing Granted JPS60140884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58247641A JPS60140884A (en) 1983-12-28 1983-12-28 Epoxy resin composite for optical semiconductor sealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58247641A JPS60140884A (en) 1983-12-28 1983-12-28 Epoxy resin composite for optical semiconductor sealing

Publications (2)

Publication Number Publication Date
JPS60140884A JPS60140884A (en) 1985-07-25
JPH0125487B2 true JPH0125487B2 (en) 1989-05-18

Family

ID=17166515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58247641A Granted JPS60140884A (en) 1983-12-28 1983-12-28 Epoxy resin composite for optical semiconductor sealing

Country Status (1)

Country Link
JP (1) JPS60140884A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167359A (en) * 1987-12-24 1989-07-03 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPH02169619A (en) * 1988-12-23 1990-06-29 Toshiba Corp Epoxy resin sealing composition and photosemiconductor prepared by using same
JPH0410672A (en) * 1990-04-27 1992-01-14 Toyoda Gosei Co Ltd Light-emitting diode
JP2712876B2 (en) * 1991-06-04 1998-02-16 日立化成工業株式会社 Transparent epoxy resin composition for transfer mold
JP2003012896A (en) * 2001-06-29 2003-01-15 Stanley Electric Co Ltd Uv-resistant epoxy resin, and light emitting diode or wavelength conversion element sealed by using the epoxy resin
KR20230057928A (en) 2021-10-22 2023-05-02 한국다이요잉크 주식회사 Curable transparent resin composition, and articles derived therefrom

Also Published As

Publication number Publication date
JPS60140884A (en) 1985-07-25

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