JPH01251728A - Wire bonding apparatus - Google Patents
Wire bonding apparatusInfo
- Publication number
- JPH01251728A JPH01251728A JP63078742A JP7874288A JPH01251728A JP H01251728 A JPH01251728 A JP H01251728A JP 63078742 A JP63078742 A JP 63078742A JP 7874288 A JP7874288 A JP 7874288A JP H01251728 A JPH01251728 A JP H01251728A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- bonding
- opening
- shutter member
- conveyance path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 6
- 229910001111 Fine metal Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000011261 inert gas Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7865—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、リードフレームの端子と半導体素子の電極と
を、金属細線を介して接合するワイヤボンディング装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a wire bonding device for bonding terminals of a lead frame and electrodes of a semiconductor element via thin metal wires.
（従来の技術）
この種のワイヤボンディング装置は、半導体素子がダイ
ボンディングされたリードフレームを、水平な搬送路上
の所定位置に位置決めし、この後、搬送路に対し昇降動
するボンディング用のツールを用いて、半導体素子の電
極とリードフレームの端子との間に金属細線を架は渡し
ている。(Prior Art) This type of wire bonding apparatus positions a lead frame to which a semiconductor element is die-bonded at a predetermined position on a horizontal conveyance path, and then uses a bonding tool that moves up and down with respect to the conveyance path. A thin metal wire is passed between the electrode of the semiconductor element and the terminal of the lead frame.
すなわち、ボールウェッジボンディングにあっては、金
属細線の先端をトーチで溶融せしめてボール状に形成し
、このボールを上記ツールにより半導体素子の電極にボ
ンディングした後、上記金属細線を繰り出して、この金
属細線の途中をリードフレームの端子に押付けてボンデ
ィングしている。That is, in ball wedge bonding, the tip of a thin metal wire is melted with a torch to form a ball shape, this ball is bonded to the electrode of a semiconductor element using the above-mentioned tool, and then the thin metal wire is fed out to form a ball. Bonding is done by pressing the middle of the thin wire against the terminal of the lead frame.
このようなワイヤボンディングに用いられるリードフレ
ームは、銀又はその他の金属材料によって被覆されてい
るが、コストの低減を目的として上記金属被覆を省略し
たリードフレームにあっては、このリードフレーム自体
を構成する金属素材、例えば銅あるいは鉄とニッケルの
合金等が大気中にそのまま露出されているものであった
。このため、リードフレームの搬送中に、このリードフ
レームが酸化してしまい、接合強度が低下するといった
問題が生じる。Lead frames used in such wire bonding are coated with silver or other metal materials, but in lead frames that omit the metal coating for the purpose of cost reduction, the lead frame itself is Metal materials such as copper or iron-nickel alloys were exposed to the atmosphere as they were. For this reason, a problem arises in that the lead frame is oxidized while the lead frame is being transported, resulting in a decrease in bonding strength.
そこで、金属素材が露出されたリードフレームを用いる
場合には、このリードフレームの搬送路をフィーダカバ
ーで覆い、このフィーダカバーで覆われた搬送路内に不
活性ガスあるいは還元性ガス又はその混合ガスを供給し
、このガス雰囲気中でボンディングを行なっている。Therefore, when using a lead frame with an exposed metal material, the conveyance path of the lead frame is covered with a feeder cover, and an inert gas, reducing gas, or a mixture thereof is is supplied, and bonding is performed in this gas atmosphere.
（発明が解決しようとする課題）
ところが、搬送路を覆うフィーダカバーの上面には、ボ
ンディング用のツールが入り込む開口部が設けられてい
るために、この開口部を通じて搬送路内に大気が流入し
易く、この開口部の近傍では、搬送路内のガスと大気中
の１１！素とが混合した状態となっている。(Problem to be Solved by the Invention) However, since the upper surface of the feeder cover that covers the conveyance path is provided with an opening through which a bonding tool enters, air may flow into the conveyance path through this opening. In the vicinity of this opening, the gas in the conveyance path and 11! It is in a mixed state.
このため、リードフレームの周囲を所定のガス雰囲気に
保つことが困難となるから、リードフレームを大気から
確実に遮断することができず、依然としてリードフレー
ムが酸化し易（なるといった不具合がある。特に、リー
ドフレームの第２のボンディング部であるリード端子が
酸化した場合には、上述の如きウェッジボンディングの
接合性に大きな影響を与え、ボンディング条件が厳しく
なるとともに、接合の信頼性も低くなるといった問題が
あり、この点において改善の余地があった。For this reason, it becomes difficult to maintain a predetermined gas atmosphere around the lead frame, and the lead frame cannot be reliably isolated from the atmosphere, resulting in problems such as the lead frame still being easily oxidized. If the lead terminal, which is the second bonding part of the lead frame, is oxidized, it will have a significant impact on the bonding properties of wedge bonding as described above, making the bonding conditions stricter and lowering the bonding reliability. There was room for improvement in this respect.
なお、従来、開口部の近傍を所定のガス雰囲気に保つた
めに、搬送路内に供給するガス口を多くすることも考え
られたが、この場合には、ガスの使用量が増大するので
、コストの増大を招き、有効な解決策とはなり得ないも
のであった。Note that conventionally, in order to maintain a predetermined gas atmosphere near the opening, it has been considered to increase the number of gas ports that supply gas into the conveyance path, but in this case, the amount of gas used increases. This resulted in increased costs and could not be an effective solution.
したがって、本発明は、リードフレームを大気から確実
に遮断することができ、このリードフレームの酸化を防
止して、充分な接合強度が得られるワイヤボンディング
装置の提供を目的とする。Therefore, an object of the present invention is to provide a wire bonding apparatus that can reliably isolate a lead frame from the atmosphere, prevent oxidation of the lead frame, and provide sufficient bonding strength.
（課題を解決するための手段）
そこで、本発明においては、金属素材が露出されたリー
ドフレームを搬送する搬送路をフィーダカバーで覆い、
このフィーダカバーの上面に、ボンディング用のツール
が挿脱される開口部を設けるとともに、上記フィーダカ
バーで覆われた搬送路内にリードフレームの酸化を防ぐ
ガスを導入し、このガス雰囲気に保たれた搬送路上にて
上記リードフレームに金属細線をボンディングするワイ
ヤボンディング装置を前提とし、
上記ボンディングツールが開口部から離脱した際に、こ
の開口部を開閉可能に閉塞し、かつ一部に透光部を有す
るシャッタ部材を設けたことを特徴とする。(Means for Solving the Problems) Therefore, in the present invention, the conveyance path for conveying the lead frame with exposed metal material is covered with a feeder cover,
An opening is provided on the top surface of this feeder cover through which a bonding tool can be inserted and removed, and a gas that prevents oxidation of the lead frame is introduced into the conveyance path covered by the feeder cover and maintained in this gas atmosphere. A wire bonding device is used for bonding a thin metal wire to the lead frame on a conveyance path, and when the bonding tool leaves the opening, the opening is closed so that it can be opened and closed, and a part of the wire is provided with a transparent part. The present invention is characterized by providing a shutter member having the following characteristics.
（作用）
この構成によれば、ボンディング用のツールが開口部か
ら離脱すると、このツールの動きに運動してシャッタ部
材が開口部を閉塞するので、フィーダカバーによって覆
われた搬送路内が大気と遮断されることになり、従来に
比べて搬送路内への大気の混入が少なく抑えられる。こ
のため、ガス量を層大することなく、リードフレームの
周囲を常に所定のガス雰囲気に保つことができ、リード
フレームの酸化を確実に防止することができる。(Function) According to this configuration, when the bonding tool leaves the opening, the shutter member is moved by the movement of the tool and closes the opening, so that the inside of the conveyance path covered by the feeder cover is exposed to the atmosphere. As a result, the intrusion of air into the conveyance path can be suppressed to a lesser extent than in the past. Therefore, a predetermined gas atmosphere can always be maintained around the lead frame without increasing the amount of gas, and oxidation of the lead frame can be reliably prevented.
（実施例）
以下本発明を、図面に示す一実施例にもとづいて説明す
る。(Example) The present invention will be described below based on an example shown in the drawings.
図中符号１は水平方向に延びるボンディングステージで
あり、このポンデイグステージ１上にリードフレーム３
を矢印方向に搬送する搬送路２が形成されている。リー
ドフレーム３は銀又はその他の金属による被覆が省略さ
れて、このリードフレーム３自体を構成する金属材料、
例えば銅又は鉄とニッケルの合金等がそのまま露出され
ており、このようなリードフレーム３には、複数の半導
体素子４が搬送方向に等間隔を存してダイボンディング
されている。Reference numeral 1 in the figure is a bonding stage extending in the horizontal direction, and a lead frame 3 is placed on this bonding stage 1.
A transport path 2 is formed to transport the material in the direction of the arrow. The lead frame 3 is coated with silver or other metal and is made of a metal material that constitutes the lead frame 3 itself.
For example, copper or an alloy of iron and nickel is exposed as is, and a plurality of semiconductor elements 4 are die-bonded to such a lead frame 3 at equal intervals in the transport direction.
また、搬送路２の途中にはボンディングヘッド５が設け
られている。ボンディングヘッド５は水平面内を任意な
方向に移動可能なテーブル（図示せず）上に支持されて
おり、このボンデイングヘラド５には超音波ホーン６が
上下方向に揺動可能に枢支されている。この超音波ホー
ン６の先端には、ボンディング用ツールとしてのキャピ
ラリ７が設けられており、このキャピラリ７にはクラン
パ８を介して金属細線９が導かれている。Further, a bonding head 5 is provided in the middle of the conveyance path 2. The bonding head 5 is supported on a table (not shown) that is movable in any direction in a horizontal plane, and an ultrasonic horn 6 is pivotally supported on the bonding head 5 so as to be swingable in the vertical direction. There is. A capillary 7 as a bonding tool is provided at the tip of the ultrasonic horn 6, and a thin metal wire 9 is guided into the capillary 7 via a clamper 8.
なお、キャピラリ７の側方には、金属細線９の先端部を
加熱してボール状に形成するトーチ１０が設けられてい
るとともに、上記ボンディングステージ１はヒータ１４
を収容したヒータブロック１５上に設置されており、こ
のヒータ１４によりリードフレーム３が適切なボンディ
ング温度に保たれる。A torch 10 is provided on the side of the capillary 7 to heat the tip of the thin metal wire 9 to form it into a ball shape, and the bonding stage 1 is equipped with a heater 14.
The lead frame 3 is maintained at an appropriate bonding temperature by this heater 14.
ボンディングヘッド５から搬送路２の上方に延出するア
ーム１１には、リードフレーム３の位置を検出するＩＴ
Ｖカメラ１２が支持されている。本実施例のＩＴＶカメ
ラ１２は、搬送路２上を送られるリードフレーム３の真
上に位置されており、その鏡筒１３が搬送路２上におい
て垂直に設置されているとともに、キャピラリ７の側方
に一定距離離間して設けられている。そして、このＩＴ
Ｖカメラ１２からの映像信号に基づいてリードフレーム
３とボンディングヘッド５との位置ずれが補正されると
、ボンディングヘッド５が矢印方向にスライドして、キ
ャピラリ７がボンディングすべき半導体素子４の上方に
移動し、この半導体素子４の電極とリードフレーム３の
端子３ａとを、金属４ｍ線９を介してボンディングする
ようになっている。An arm 11 extending from the bonding head 5 above the conveyance path 2 has an IT device that detects the position of the lead frame 3.
A V camera 12 is supported. The ITV camera 12 of this embodiment is located directly above the lead frame 3 that is sent on the transport path 2, and its lens barrel 13 is installed vertically on the transport path 2, and on the side of the capillary 7. They are placed a certain distance apart from each other. And this IT
When the positional deviation between the lead frame 3 and the bonding head 5 is corrected based on the video signal from the V camera 12, the bonding head 5 slides in the direction of the arrow, and the capillary 7 is placed above the semiconductor element 4 to be bonded. The electrode of the semiconductor element 4 and the terminal 3a of the lead frame 3 are bonded to each other via a 4m metal wire 9.
ボンディングステージ１上の搬送路２は、フィーダカバ
ー１６によって覆われており、このフィーダカバー１６
により外方と区画された搬送路２内には、リードフレー
ム３の酸化を防止する不活性ガス、還元性ガス又はその
混合ガスが供給されている。そして、フィーダカバー１
６の上面１６ａには、リードフレーム３のボンディング
位置に対応して開口部１７が形成されており、この開口
部１７を通じてキャピラリ７が搬送路２内に挿脱される
とともに、ボンディング前の状態では、開口部１７の真
上にＩＴＶカメラ１２が位置されている。The conveyance path 2 on the bonding stage 1 is covered by a feeder cover 16.
An inert gas, a reducing gas, or a mixed gas thereof for preventing oxidation of the lead frame 3 is supplied into the conveying path 2 which is separated from the outside by. And feeder cover 1
An opening 17 is formed in the upper surface 16a of the lead frame 3 in correspondence with the bonding position of the lead frame 3, and the capillary 7 is inserted into and removed from the transport path 2 through this opening 17. , an ITV camera 12 is positioned directly above the opening 17.
なお、本実施例の開口部１７は、単一の半導体素子４を
露出させる大きさに形成されている。Note that the opening 17 in this embodiment is formed to a size that exposes a single semiconductor element 4.
ところで、フィーダカバー１６の上側には、開口部１７
を開閉可能に閉塞する平板状のシャッタ部材２０が設け
られている。シャッタ部材２０は第１図に示すように、
Ｉｒ■カメラ１２オよびキャピラリ７の下方に跨がって
設けられており、本実施例のシャッタ部材２０は、ボン
ディングヘッド５に固定されてＩＴＶカメラ１２やキャ
ピラリ７と一体に移動するようになっている。そして、
このシャッタ部材２０には、光の乱反射を防止するよう
に加工された透明なガラス２１によって覆われた観察窓
２２（透光部）と、キャピラリ７が挿脱される比較的小
径な挿通孔２３が並んで設けられており、観察窓２２は
ＩＴＶカメラ１２の下方に対応して位置している。By the way, an opening 17 is provided on the upper side of the feeder cover 16.
A flat plate-shaped shutter member 20 is provided to open and close the shutter member 20 . As shown in FIG. 1, the shutter member 20 is
The shutter member 20 of this embodiment is fixed to the bonding head 5 and moves together with the ITV camera 12 and the capillary 7. ing. and,
The shutter member 20 includes an observation window 22 (transparent part) covered with a transparent glass 21 processed to prevent diffused reflection of light, and a relatively small-diameter insertion hole 23 into which the capillary 7 is inserted and removed. are arranged side by side, and the observation window 22 is located below the ITV camera 12.
したがって、ＩＴＶカメラ１２がフィーダカバー１６の
開口部１７の真上に対応しているボンディング前の状態
では、観察窓２２が開口部１７上に位置して、この開口
部１７を閉塞するとともに、ボンディングに際してボン
ディングヘッド５が移動すると、シャッタ部材２０の挿
通孔２３が開口部１７に重なり合り、この開口部１７が
開口されるようになっている。Therefore, in the pre-bonding state where the ITV camera 12 corresponds directly above the opening 17 of the feeder cover 16, the observation window 22 is located above the opening 17, closes this opening 17, and When the bonding head 5 moves at this time, the insertion hole 23 of the shutter member 20 overlaps the opening 17, and the opening 17 is opened.
このような構成によると、ボンディング前にあっては、
シャッタ部材２０の観察窓２２が開口部１７を閉塞して
いるため、ボンディングすべき半導体素子４がリードフ
レーム３と共に開口部１７に対応した位置にまで送られ
てくると、ＩＴＶカメラ１２によりリードフレーム３と
ボンディングヘッド５との位置ずれが検出され、このＩ
ＴＶカメラ１２からの映像信号に基づいてボンディング
ヘッド５の位置が補正される。この後、ボンディングヘ
ッド５の移動により、キャピラリ７が開口部１７の真上
に位置するとともに、このボンディングヘッド５と一体
にシャッタ部材２０も移動するので、シャッタ部材２０
の挿通孔２３が開口部１７に重なり合い、開口部１７が
開かれる。このように開口部１７が開かれると、キャピ
ラリ７がボンディングヘッド５と共に作動を開始し、リ
ードフレーム３の端子３ａと半導体素子４の電極との間
を、金属細線９によって接合する。According to this configuration, before bonding,
Since the observation window 22 of the shutter member 20 closes the opening 17, when the semiconductor element 4 to be bonded is sent together with the lead frame 3 to a position corresponding to the opening 17, the ITV camera 12 3 and the bonding head 5 is detected, and this I
The position of the bonding head 5 is corrected based on the video signal from the TV camera 12. Thereafter, as the bonding head 5 moves, the capillary 7 is positioned directly above the opening 17, and the shutter member 20 also moves together with the bonding head 5.
The insertion hole 23 overlaps the opening 17, and the opening 17 is opened. When the opening 17 is opened in this manner, the capillary 7 starts operating together with the bonding head 5, and the terminals 3a of the lead frame 3 and the electrodes of the semiconductor element 4 are bonded using the thin metal wire 9.
このようにして一つの半導体素子４とリードフレーム３
のボンディングが完了すると、同時にボンディングヘッ
ド５が元の位置に復帰し、開口部１７が観察窓２２によ
って閉じられる。そして、リードフレーム３が１ピッチ
送られて、次の半導体素子４が開口部１７の下方に送ら
れてくるとともに、ＩＴＶカメラ１２が観察窓２２の上
方に位置し、上述と同様の動作が繰返し行なわれる。In this way, one semiconductor element 4 and lead frame 3
When the bonding is completed, the bonding head 5 simultaneously returns to its original position and the opening 17 is closed by the observation window 22. Then, the lead frame 3 is fed one pitch, and the next semiconductor element 4 is sent below the opening 17, and the ITV camera 12 is positioned above the observation window 22, and the same operation as described above is repeated. It is done.
このような本発明の一実施例によれば、搬送路゛ ２に
開口するボンディング用の開口部１７は、キャピラリ７
によるボンディング時を除いてシャッタ部材２０によっ
て閉塞されるから、所定のガス雰囲気に保たれた搬送路
２を大気中から遮断することができ、従来に比べて搬送
路２内への大気の流入を少なく抑えることができる。According to such an embodiment of the present invention, the bonding opening 17 that opens into the transport path 2 is connected to the capillary 7.
Since it is closed by the shutter member 20 except during bonding due to can be kept to a minimum.
このため、リードフレーム３の酸化を確実に防止するこ
とができ、充分な接合強度が得られる。Therefore, oxidation of the lead frame 3 can be reliably prevented and sufficient bonding strength can be obtained.
それとともに、酸化防止用のガスの供給量を多くする必
要もないから、このガスを節約することができ、経済的
でもある。At the same time, since there is no need to increase the amount of gas for preventing oxidation, this gas can be saved, which is also economical.
また、本実施例のシャッタ部材２０には、ＩＴＶカメラ
１２に対応して透明なガラス２１で覆われた観察窓２２
を設けであるので、ＩＴＶカメラ１２によってリードフ
レーム３の位置をＩＩしている間も、開口部１７はガラ
ス２１によって閉塞され続けることになる。したがって
、リードフレーム３を酸化させることなく、このリード
フレーム３の位置検量を行なうことができる。The shutter member 20 of this embodiment also includes an observation window 22 covered with transparent glass 21 corresponding to the ITV camera 12.
Therefore, the opening 17 continues to be closed by the glass 21 even while the position of the lead frame 3 is being determined by the ITV camera 12. Therefore, the position of the lead frame 3 can be measured without oxidizing the lead frame 3.
なお、上記実施例では、開口部を単一の半導体素子を露
出させる大きさに形成したが、例えばリードフレーム上
で隣合う半導体素子を金属細線で接続する場合には、開
口部を複数の半導体素子に跨がる大きさに形成しても良
く、この場合には開口部が大きくなった分だけ、搬送路
内に大気が流入し易くなるので、シャッタ部材による大
気の遮蔽効果はより一層大きなものとなる。In the above embodiment, the opening is formed to a size that exposes a single semiconductor element, but for example, when connecting adjacent semiconductor elements on a lead frame with a thin metal wire, the opening is formed to expose a single semiconductor element. It may be formed to a size that extends over the element, and in this case, the larger the opening, the easier the air will flow into the conveyance path, so the effect of shielding the air from the shutter member will be even greater. Become something.
さらに、上記実施例ではシャッタ部材をボンディングヘ
ッドに取付け、このボンディングヘッドと一体に移動さ
せることで、開口部を開閉するようにしたが、本発明は
これに限らず、例えばシャッタ部材をエアシリンダ等で
独立して開閉作動させるようにしても良い。Further, in the above embodiment, the shutter member is attached to the bonding head and moved together with the bonding head to open and close the opening, but the present invention is not limited to this. For example, the shutter member may be attached to an air cylinder, etc. Alternatively, the opening and closing operations may be performed independently.
（発明の効果）
以上詳述した本発明によれば、搬送路内への大気の流入
が抑えられるから、この搬送路上のリードフレームを大
気から確実に遮断することができる。したがって、リー
ドフレームの酸化を確実に防止することができ、充分な
接合強度が得られる。(Effects of the Invention) According to the present invention described in detail above, since the inflow of the atmosphere into the conveyance path is suppressed, the lead frame on the conveyance path can be reliably isolated from the atmosphere. Therefore, oxidation of the lead frame can be reliably prevented and sufficient bonding strength can be obtained.
図面は本発明の一実施例を示し、第１図はシャッタ部材
により開口部が閉塞された状態の断面図、第２図はボン
ディング状態の断面図、第３図はシャッタ部材および搬
送路の平面図、第４図は装置全体の斜視図である。
２・・・搬送路、３・・・リードフレーム、７・・・ボ
ンディングツール（キャピラリ）、９・・・金属細線、
１６・・・フィーダカバー、１７・・・開口部、２０・
・・シャッタ部材、２２・・・観察窓（透光部）。
出願人代理人 弁理士 鈴 江 武 彦２− 搬送路
３・−リードフレーム
第２図The drawings show an embodiment of the present invention; FIG. 1 is a sectional view of the opening closed by the shutter member, FIG. 2 is a sectional view of the bonded state, and FIG. 3 is a plan view of the shutter member and the conveyance path. FIG. 4 is a perspective view of the entire device. 2... Conveyance path, 3... Lead frame, 7... Bonding tool (capillary), 9... Metal thin wire,
16... Feeder cover, 17... Opening, 20.
...Shutter member, 22... Observation window (transparent part). Applicant's representative Patent attorney Takehiko Suzue 2- Conveyance path 3 - Lead frame Figure 2
Claims (1)
をフィーダカバーで覆い、このフィーダカバーの上面に
、ボンディング用のツールが挿脱される開口部を設ける
とともに、上記フィーダカバーで覆われた搬送路内にリ
ードフレームの酸化を防ぐガスを導入し、このガス雰囲
気に保たれた搬送路上にて上記リードフレームに金属細
線をボンディングするワイヤボンディング装置において
上記ボンディングツールが開口部から離脱した際に、こ
の開口部を開閉可能に閉塞し、かつ一部に透光部を有す
るシャッタ部材を設けたことを特徴とするワイヤボンデ
ィング装置。The conveyance path for conveying the lead frame with exposed metal material is covered with a feeder cover, and an opening is provided on the top surface of the feeder cover through which a bonding tool is inserted and removed. A gas that prevents oxidation of the lead frame is introduced into the wire bonding machine, which bonds a fine metal wire to the lead frame on a conveyance path maintained in this gas atmosphere.When the bonding tool leaves the opening, the opening A wire bonding device characterized in that a shutter member is provided, the part of which is closed so as to be openable and closable, and a part of which has a light-transmitting part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63078742A JP2624762B2 (en) | 1988-03-31 | 1988-03-31 | Wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63078742A JP2624762B2 (en) | 1988-03-31 | 1988-03-31 | Wire bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01251728A true JPH01251728A (en) | 1989-10-06 |
| JP2624762B2 JP2624762B2 (en) | 1997-06-25 |
Family
ID=13670340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63078742A Expired - Lifetime JP2624762B2 (en) | 1988-03-31 | 1988-03-31 | Wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2624762B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329732A (en) * | 2001-04-27 | 2002-11-15 | Murata Mfg Co Ltd | Parts mounting machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925232A (en) * | 1982-07-31 | 1984-02-09 | Shinkawa Ltd | Bonding device |
| JPS5976434A (en) * | 1982-10-26 | 1984-05-01 | Toshiba Corp | Reduction apparatus |
| JPS59124138A (en) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | Semiconductor device |
-
1988
- 1988-03-31 JP JP63078742A patent/JP2624762B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925232A (en) * | 1982-07-31 | 1984-02-09 | Shinkawa Ltd | Bonding device |
| JPS5976434A (en) * | 1982-10-26 | 1984-05-01 | Toshiba Corp | Reduction apparatus |
| JPS59124138A (en) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329732A (en) * | 2001-04-27 | 2002-11-15 | Murata Mfg Co Ltd | Parts mounting machine |
| JP4506027B2 (en) * | 2001-04-27 | 2010-07-21 | 株式会社村田製作所 | Electronic component mounting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2624762B2 (en) | 1997-06-25 |
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