JPH01248619A - Thin film coating device - Google Patents
Thin film coating deviceInfo
- Publication number
- JPH01248619A JPH01248619A JP7769988A JP7769988A JPH01248619A JP H01248619 A JPH01248619 A JP H01248619A JP 7769988 A JP7769988 A JP 7769988A JP 7769988 A JP7769988 A JP 7769988A JP H01248619 A JPH01248619 A JP H01248619A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- case
- holes
- liquid
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000009501 film coating Methods 0.000 title claims description 15
- 239000007788 liquid Substances 0.000 claims abstract description 55
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 abstract description 26
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000001548 drop coating Methods 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体製造工程においてウェハ表面にフォトレ
ジスト膜等の薄膜を塗布形成するための薄膜塗布装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film coating apparatus for coating and forming a thin film such as a photoresist film on the surface of a wafer in a semiconductor manufacturing process.
［従来の技術］
従来、この種の薄膜塗布装置は、例えば、第３図に示す
ように、ウェハ保持台２１の上面にウェハ２２が載置さ
れ、真空ポンプ（図示せず）により吸引されてウェハ２
２が保持台２１に吸着保持される。また、ウェハ保持台
２１は駆動モータ（図示せず）により駆動され、ウェハ
２２を垂直軸の周りに回転させる。ケース２６がウェハ
保持台２１を囲むように配設されており、ウェハ保持台
２１上のウェハ２２の周縁とケース２６の内壁面との間
には遮液板２４が配設されている。この遮液板２４は、
ウェハ２２の表面から飛散された塗布液の粒子をケ７ス
２６の底壁面方向に反射させるもので、略円錐環状をな
す。そして、ウェハ２２の表面中央部には塗布液を滴下
させる滴下ノズル２３が配設されており、ケース２６の
底壁面には落下した塗布液の粒子を排出させるための排
出口２５が設けられている。[Prior Art] Conventionally, in this type of thin film coating apparatus, for example, as shown in FIG. wafer 2
2 is held by suction on the holding table 21. Further, the wafer holding table 21 is driven by a drive motor (not shown) to rotate the wafer 22 around a vertical axis. A case 26 is arranged to surround the wafer holder 21 , and a liquid shield plate 24 is arranged between the periphery of the wafer 22 on the wafer holder 21 and the inner wall surface of the case 26 . This liquid shielding plate 24 is
It reflects particles of the coating liquid scattered from the surface of the wafer 22 toward the bottom wall surface of the case 26, and has a substantially conical ring shape. A dripping nozzle 23 for dripping the coating liquid is provided at the center of the surface of the wafer 22, and a discharge port 25 is provided on the bottom wall of the case 26 for discharging fallen particles of the coating liquid. There is.
この薄膜塗布装置においては、ウェハ保持台２１上にウ
ェハ２２が保持されると、滴下ノズル２３から塗布液が
ウェハ２２上に滴下されると共に、ウェハ保持台２１が
回転し、これにより塗布液は遠心力によりウェハ２２全
面に拡がり、塗布膜が形成される。その後、所要のｒ４
膜を得るために、更に、回転させて余分な塗布液を破線
で示すように外周方向に飛び散らせる。この飛び散った
塗布液は微小な粒子となり、遮液板２４に衝突して落下
し、その後排出口２５から排出される。In this thin film coating apparatus, when the wafer 22 is held on the wafer holder 21, the coating liquid is dripped onto the wafer 22 from the dripping nozzle 23, and the wafer holder 21 is rotated. It spreads over the entire surface of the wafer 22 due to centrifugal force, and a coating film is formed. Then the required r4
In order to obtain a film, it is further rotated to scatter excess coating liquid toward the outer periphery as shown by the broken line. This scattered coating liquid becomes minute particles, collides with the liquid shielding plate 24 and falls, and is then discharged from the discharge port 25.
［発明が解決しようとする課題］
上述のように従来の薄膜塗布装置においては、遮液板２
４によりウェハ２２上から飛散した塗布液の粒子を反射
させ排出口２５に導くようにしているが、この構造では
長時間使用すると次のような問題点があった。即ち、使
用当初は前述したように、塗布液の飛散粒子は遮液板２
４により確実に下方向に反射されるが、使用時間が増す
につれて当該飛散粒子が第４図に示すように、遮液板２
４の表面に徐々に付着し硬化することにより表面状態が
不均一な膜２７が形成される。このため、塗布液の飛散
粒子の遮液板２４での反射方向が不規則になり、その結
果ウェハ２２の表面及び裏面に飛散粒子が付着される。[Problems to be Solved by the Invention] As mentioned above, in the conventional thin film coating device, the liquid shielding plate 2
4, particles of the coating liquid scattered from the top of the wafer 22 are reflected and guided to the discharge port 25, but this structure has the following problems when used for a long time. That is, as mentioned above, at the beginning of use, the scattered particles of the coating liquid are absorbed by the liquid shield plate 2.
However, as the usage time increases, the scattered particles are reflected downward by the liquid shield plate 2, as shown in FIG.
By gradually adhering to the surface of 4 and hardening, a film 27 with an uneven surface condition is formed. Therefore, the direction of reflection of the scattered particles of the coating liquid on the liquid shielding plate 24 becomes irregular, and as a result, the scattered particles adhere to the front and back surfaces of the wafer 22.
このようにウェハ２２の表面及び裏面に飛散粒子が付着
されると、半導体素子のマスクパターン形成工程にあっ
ては、パターン形成不良が発生することになり、製造歩
留りが低下する原因となる。If the scattered particles adhere to the front and back surfaces of the wafer 22 in this way, pattern formation defects will occur in the mask pattern forming process for semiconductor elements, which will cause a decrease in manufacturing yield.
本発明はかかる問題点に鑑みてなされたものであって、
ウェハ表面から飛散した粒子がウェハの表面及び裏面に
再付着することがなく、半導体装置の製造歩留りを向上
させることができる薄膜塗布装置を提供することを目的
とする。The present invention has been made in view of such problems, and includes:
It is an object of the present invention to provide a thin film coating device that prevents particles scattered from the wafer surface from re-adhering to the front and back surfaces of the wafer, thereby improving the manufacturing yield of semiconductor devices.
［課題を解決するための手段］
本発明の薄膜塗布装置は、ウェハを保持する保持部材と
、この保持部材をその上のウェハの表面に実質的に直交
する軸の周りに回転駆動する駆動手段と、前記ウェハの
表面に塗布液を滴下させる滴下手段と、前記保持部材上
のウェハを囲むように配設されたケースと、前記保持部
材上のウェハの周縁とケースの内壁面との間に配設され
複数個の孔を有すると共に、相互間に適長間隔をおいて
配置された複数個の遮液板と、を有することを特徴とす
る。[Means for Solving the Problems] The thin film coating apparatus of the present invention includes a holding member that holds a wafer, and a driving means that rotates the holding member around an axis substantially perpendicular to the surface of the wafer thereon. a dropping means for dropping a coating liquid onto the surface of the wafer; a case disposed to surround the wafer on the holding member; and a space between the periphery of the wafer on the holding member and the inner wall surface of the case. It is characterized in that it has a plurality of holes, and a plurality of liquid-shielding plates arranged at appropriate length intervals.
［作用］
上記構成の本発明に係る薄膜塗布装置においては、保持
部材上に保持されたウェハが回転されると共に、その表
面に塗布液が滴下され、この滴下液が周縁部まで拡がる
ことにより、ウェハの表面に均一な薄膜が形成される。[Function] In the thin film coating apparatus according to the present invention having the above configuration, the wafer held on the holding member is rotated, and the coating liquid is dropped on the surface of the wafer, and this dropped liquid spreads to the peripheral edge, thereby A uniform thin film is formed on the surface of the wafer.
同時に薄膜形成上不要な塗布液が周辺に飛散され、微小
な粒子となって多層構造の遮液板に達する。この塗布液
粒子はその一部がこれらの遮液板に設けられた孔を通過
した後、ケースの内壁面又は池の遮液板に衝突して落下
する。At the same time, the coating liquid that is unnecessary for forming a thin film is scattered around, becomes minute particles, and reaches the liquid-shielding plate having a multilayer structure. A portion of the coating liquid particles pass through the holes provided in these liquid shielding plates, and then collide with the inner wall surface of the case or the liquid shielding plate of the pond and fall.
−・方、遮液板の孔を通過しなかった飛散粒子も当該遮
液板の下層に配設された遮液板に反射され、この遮液板
の孔を通過して順次ケースの底壁面方向に導かれる。- On the other hand, the scattered particles that did not pass through the holes in the liquid shielding plate are also reflected by the liquid shielding plate disposed below the liquid shielding plate, pass through the holes in the liquid shielding plate, and are sequentially passed through the holes on the bottom wall of the case. be guided in a direction.
このようにして、ウェハに戻ってくる飛散粒子の量が極
めて低減される。In this way, the amount of flying particles returning to the wafer is greatly reduced.
［実施例］ ′
以下、添付の図面を参照して本発明の実施例について具
体的に説明する。[Embodiments] ' Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
第１図は本発明の実施例に係る薄膜塗布装置に使用され
る遮液板及びケースの構造を一部断面して示す斜視図、
第２図はこの薄膜塗布装置の作用を説明するための縦断
面図である。図中、１は上面にウェハ２が載置されると
共に、このウェハ２を真空ポンプ（図示せず）により吸
引して吸着固定するウェハ保持台である。このウェハ保
持台１は軸部１ａを中心、に回転駆動され、吸着保持し
たウェハ２を垂直方向の中心軸の周りに回転させるよう
になっている。ウェハ保持台１の周囲にはウェハ保持台
１上に保持されたウェハ２を囲むようにケース３が配設
されている。このケース３の上方には、ウェハ保持台１
上に載置されたウェハ２の中央部に対してレジスト液等
の塗布液を滴下させる滴下ノズル４が配設されている。FIG. 1 is a partially sectional perspective view showing the structure of a liquid shield plate and a case used in a thin film coating apparatus according to an embodiment of the present invention;
FIG. 2 is a longitudinal sectional view for explaining the operation of this thin film coating device. In the figure, reference numeral 1 denotes a wafer holding table on which a wafer 2 is placed and which is suctioned and fixed by a vacuum pump (not shown). The wafer holding table 1 is rotatably driven around a shaft portion 1a, and rotates the wafer 2 held by suction around a central axis in a vertical direction. A case 3 is disposed around the wafer holder 1 so as to surround the wafer 2 held on the wafer holder 1. Above this case 3, there is a wafer holding table 1.
A dropping nozzle 4 is provided to drop a coating liquid such as a resist liquid onto the center of the wafer 2 placed above.
ケース３には、上面中央部に滴下ノズル４から滴下され
た塗布液を内部に導くための開口部５が設けられると共
に、下面中央部にはウェハ保持台１の軸部１ａを貫通さ
せるための開口部６が設けられている。The case 3 is provided with an opening 5 in the center of the upper surface for guiding the coating liquid dripped from the dripping nozzle 4 into the inside, and an opening 5 in the center of the lower surface for passing the shaft 1a of the wafer holding table 1. An opening 6 is provided.
上記ウェハ保持台１上に載置されたウェハ２の周縁とケ
ース３の内壁面との間には比較的緩やかな傾斜をもつ略
円錐環状の３１！液板７が多層、例えば、５層に配設さ
れている。各遮液板７の間には所定の間隔で複数のスペ
ーサ８が介装されており、各遮液板７が互いに平行にな
るように保持されている。Between the peripheral edge of the wafer 2 placed on the wafer holder 1 and the inner wall surface of the case 3, there is a substantially conical annular shape 31 with a relatively gentle slope. The liquid plate 7 is arranged in multiple layers, for example, five layers. A plurality of spacers 8 are interposed between each of the liquid shielding plates 7 at predetermined intervals, and the liquid shielding plates 7 are held parallel to each other.
遮液板７には夫々複数の孔７ａが形成されており、これ
らの孔７ａにより塗布液の飛散粒子を当該遮液板７から
上又は下方向に通過させるようになっている。遮液板７
の下方のケース３の底壁面には飛散し落下した粒子を排
出するための排出口９が設けられている。A plurality of holes 7a are formed in each of the liquid shielding plates 7, and these holes 7a allow scattered particles of the coating liquid to pass upwardly or downwardly from the liquid shielding plate 7. Liquid shield plate 7
A discharge port 9 for discharging scattered and fallen particles is provided on the bottom wall surface of the case 3 below.
次に、上記構成の薄膜塗布装置の動作について説明する
。先ず、ウェハ２をウェハ保持台１の上面に載置し、真
空ポンプ（図示せず）を作動さぜることによりウェハ２
を吸着保持する。続いて、駆動モータ（図示せず）によ
りウェハ保持台１を回転させながら、滴下ノズル４から
塗布液をウェハ２の表面中央部に滴下させる。ウェハ２
の中央部に滴下された塗布液は遠心力により周縁部まで
徐々に拡がり、これによりウェハ２の表面に均一な薄膜
が形成される。而して、薄膜形成に不要な塗布液を飛散
させるために、ウェハ保持台１を更に回転させると、余
分な塗布液は周辺に飛散して微小な粒子となる。この飛
散粒子は第２図に破線で示すように、多層構造の遮液板
７に達し、その一部がこれらの遮液板７に設けられた孔
７ａを通過することによりケース３の内壁面に衝突して
落下し、その後、排出口９から排出される。また、孔７
ａを通過することなく、遮液板７で反射した粒子も当該
遮液板７とその下の遮液板７との間で反射を繰り返した
後、孔７ａから順次下方に導かれ最後にはケース３の底
壁面に落下して排出口９から排出される。Next, the operation of the thin film coating apparatus having the above configuration will be explained. First, the wafer 2 is placed on the top surface of the wafer holding table 1, and a vacuum pump (not shown) is operated to remove the wafer 2.
Holds by adsorption. Subsequently, while rotating the wafer holding table 1 by a drive motor (not shown), the coating liquid is dripped onto the center of the surface of the wafer 2 from the dripping nozzle 4 . wafer 2
The coating liquid dropped onto the center of the wafer 2 gradually spreads to the periphery due to centrifugal force, thereby forming a uniform thin film on the surface of the wafer 2. When the wafer holder 1 is further rotated in order to scatter the coating liquid unnecessary for thin film formation, the excess coating liquid scatters around and becomes minute particles. As shown by the broken line in FIG. 2, these scattered particles reach the liquid shielding plates 7 having a multilayer structure, and some of them pass through the holes 7a provided in these liquid shielding plates 7, thereby damaging the inner wall surface of the case 3. It collides with and falls, and is then discharged from the discharge port 9. Also, hole 7
Particles that are reflected by the liquid shielding plate 7 without passing through a are also repeatedly reflected between the liquid shielding plate 7 and the liquid shielding plate 7 below, and then guided downward from the hole 7a and finally It falls onto the bottom wall surface of the case 3 and is discharged from the discharge port 9.
このようにウェハ２の表面から周辺に飛散した粒子は、
多層構造の遮液板７によりケース３の底壁面方向に効果
的に導かれ、排出口８から排出される。従って、飛散粒
子が遮液板７からウェハ２方向に跳ね返ってその表面又
は裏面に再付着する ゛ようなことがなくなる。The particles scattered from the surface of the wafer 2 to the surrounding area in this way are
The liquid is effectively guided toward the bottom wall of the case 3 by the liquid shielding plate 7 having a multilayer structure, and is discharged from the discharge port 8 . Therefore, there is no possibility that the scattered particles will bounce off the liquid shielding plate 7 in the direction of the wafer 2 and re-adhere to the front or back surface of the wafer.
［発明の効果］
以上のように本発明の薄膜塗布装置によれば、保持部材
上に保持されたウェハの周縁とケースの内壁面との間に
、夫々複数個の孔を設けた遮液板を多層構造に配設させ
るようにしたので、ウェハの表面から飛散した粒子のウ
ェハ方向への跳ね返りを著しく低減でき、従ってウェハ
の表面及び裏面への再付着を防止することができ、半導
体装置の製造歩留りを向上させることができるという効
用を奏する。[Effects of the Invention] As described above, according to the thin film coating apparatus of the present invention, the liquid shield plate is provided with a plurality of holes between the periphery of the wafer held on the holding member and the inner wall surface of the case. Since the particles are arranged in a multilayer structure, it is possible to significantly reduce the bounce of particles scattered from the surface of the wafer toward the wafer, thereby preventing them from re-adhering to the front and back surfaces of the wafer. This has the effect of improving manufacturing yield.
【図面の簡単な説明】
第１図は本発明の実施例に１系る薄膜塗布装置の要部を
一部断面して示す斜視図、第２図は第１図の装置の動作
を説明するための縦断面図、第３図は従来の薄膜塗布装
置の縦断面図、第４図は第３図の要部を拡大して示す縦
断面図である。[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a partially sectional perspective view showing the essential parts of a thin film coating device according to an embodiment of the present invention, and Fig. 2 explains the operation of the device shown in Fig. 1. FIG. 3 is a vertical cross-sectional view of a conventional thin film coating apparatus, and FIG. 4 is a vertical cross-sectional view showing an enlarged main part of FIG. 3.
Claims (1)
の上のウェハの表面に実質的に直交する軸の周りに回転
駆動する駆動手段と、前記ウェハの表面に塗布液を滴下
させる滴下手段と、前記保持部材上のウェハを囲むよう
に配設されたケースと、前記保持部材上のウェハの周縁
とケースの内壁面との間に配設され複数個の孔を有する
と共に相互間に適長間隔をおいて配置された複数個の遮
液板と、を有することを特徴とする薄膜塗布装置(1) A holding member for holding a wafer, a driving means for rotationally driving the holding member around an axis substantially perpendicular to the surface of the wafer thereon, and a dripping means for dropping a coating liquid onto the surface of the wafer. a case disposed to surround the wafer on the holding member; and a case disposed between the periphery of the wafer on the holding member and the inner wall surface of the case and having a plurality of holes and adapted to fit between each other. A thin film coating device characterized by having a plurality of liquid shielding plates arranged at long intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7769988A JPH01248619A (en) | 1988-03-30 | 1988-03-30 | Thin film coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7769988A JPH01248619A (en) | 1988-03-30 | 1988-03-30 | Thin film coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01248619A true JPH01248619A (en) | 1989-10-04 |
Family
ID=13641143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7769988A Pending JPH01248619A (en) | 1988-03-30 | 1988-03-30 | Thin film coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01248619A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6899919B2 (en) | 2003-01-21 | 2005-05-31 | Jack Chen | Method of making a high surface area electrode |
| JP2018075553A (en) * | 2016-11-11 | 2018-05-17 | トヨタ自動車株式会社 | Air blow type washing equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61176120A (en) * | 1985-01-31 | 1986-08-07 | Nec Corp | Developing device for photoresist |
-
1988
- 1988-03-30 JP JP7769988A patent/JPH01248619A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61176120A (en) * | 1985-01-31 | 1986-08-07 | Nec Corp | Developing device for photoresist |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6899919B2 (en) | 2003-01-21 | 2005-05-31 | Jack Chen | Method of making a high surface area electrode |
| JP2018075553A (en) * | 2016-11-11 | 2018-05-17 | トヨタ自動車株式会社 | Air blow type washing equipment |
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