JPH01248511A - Formation of polycrystal film - Google Patents
Formation of polycrystal filmInfo
- Publication number
- JPH01248511A JPH01248511A JP7475588A JP7475588A JPH01248511A JP H01248511 A JPH01248511 A JP H01248511A JP 7475588 A JP7475588 A JP 7475588A JP 7475588 A JP7475588 A JP 7475588A JP H01248511 A JPH01248511 A JP H01248511A
- Authority
- JP
- Japan
- Prior art keywords
- film
- dimensional
- recrystallized
- amorphous
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001953 recrystallisation Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 23
- 239000013078 crystal Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 50
- 239000007789 gas Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
この発明は、多結晶膜を形成する方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method for forming a polycrystalline film.
（従来の技術）
これまで知られている多結晶膜の形成方法としては、絶
縁基板上に非晶質膜あるいは多結晶膜を形成し、熱アニ
ールすることにより比較的大きな粒径の多結晶膜を得る
方法などが試みられている（Ｊ、 Ｅｌｅｃｔｒｏｃｈ
ｅｍ、 Ｓｏｃ、 Ｖｏｌ、 １３４ Ｎα７
ｐ１７７１ １９８７）。(Prior art) As a method of forming a polycrystalline film known so far, an amorphous film or a polycrystalline film is formed on an insulating substrate, and a polycrystalline film with a relatively large grain size is formed by thermal annealing. (J, Electroch.
em, Soc, Vol, 134 Nα7
p1771 1987).
また、レーザ光、電子ビームなどを用いるレーザアニー
ル、ビームアニールなどによって、絶縁基板上に形成し
た非晶質膜あるいは多結晶膜を再結晶化させ、粒界が低
減化された多結晶膜を得るようにした方法も発表されて
いる（応用物理、Ｖｏｌ、５４．Ｐ１２７４ １９８５
）。In addition, a polycrystalline film with reduced grain boundaries is obtained by recrystallizing an amorphous or polycrystalline film formed on an insulating substrate by laser annealing or beam annealing using laser light, electron beam, etc. A method has also been published (Applied Physics, Vol. 54. P1274 1985
).
（発明が解決しようとする課題）
しかしながら、前者の結晶形成方法においては、成膜時
に形成される多結晶膜の粒径を大きくすることに限界が
あるとともに、粒界の複雑に入った結晶性の良くない結
晶しか得られなかった。(Problems to be Solved by the Invention) However, in the former crystal formation method, there is a limit to increasing the grain size of the polycrystalline film formed during film formation, and crystallinity with complicated grain boundaries Only poor crystals were obtained.
また、後者のレーザ光や電子ビームを照射する方法にお
いても、形成される結晶は均質でない亜粒界が導入され
るため結晶性が悪かった。Furthermore, even in the latter method of irradiating with laser light or electron beam, the formed crystals had poor crystallinity because non-uniform sub-grain boundaries were introduced.
この発明はこのような課題を解決するためになされたも
のであり、大粒径化と均質化を図ることができる多結晶
膜の形成方法を提供することを目的とするものである。The present invention has been made to solve these problems, and it is an object of the present invention to provide a method for forming a polycrystalline film that can increase the grain size and make the grains homogeneous.
（課題を解決するための手段）
この発明は上記目的を達成するために、基板上に結晶子
を所定の密度で形成し、この結晶子をアニール処理によ
り再結晶化し、この再結晶化済みの結晶子の上に非晶質
膜を堆積し、アニール処理により前記結晶子を核として
非晶質膜を再結晶化するようにしたものである。(Means for Solving the Problems) In order to achieve the above object, the present invention forms crystallites at a predetermined density on a substrate, recrystallizes the crystallites by annealing treatment, and An amorphous film is deposited on crystallites, and the amorphous film is recrystallized using the crystallites as nuclei through annealing treatment.
（作用）
上記多結晶膜の形成方法によれば、予め行われたアニー
ル処理よる再結晶化で結晶子は単結晶に近い状態になる
。この結晶子の上に堆積した非晶質膜にアニール処理を
施すと結晶子は核として非晶質膜の再結晶化をスムーズ
に進めるため、適切な密度で均一に結晶子を形成するこ
とにより多結晶の大粒径化と均質化を図ることができる
。(Function) According to the above method for forming a polycrystalline film, the crystallites are brought into a state close to a single crystal by recrystallization by an annealing treatment performed in advance. When the amorphous film deposited on the crystallites is annealed, the crystallites serve as nuclei and smoothly recrystallize the amorphous film. It is possible to increase the grain size and homogenize polycrystals.
（実施例）
以下、この発明の実施例を第１図（ａ）〜（ｆ）を基に
説明する。(Example) Hereinafter, an example of the present invention will be described based on FIGS. 1(a) to (f).
最初に、例えばシリコンの基板１をＣＶＤ装置（図示せ
ず）内にセントし、０□のみまたは水蒸気とともに０２
を供給した中で１０００°Ｃで加熱し、基板１の鏡面上
に第１図（ａ）に示すように絶縁膜として酸化膜２を約
５０００人形成する。First, a substrate 1 made of silicon, for example, is placed in a CVD apparatus (not shown), and 0□ alone or with water vapor is added.
The oxide film 2 is heated at 1000° C. in a supply of water to form an oxide film 2 as an insulating film on the mirror surface of the substrate 1 as shown in FIG. 1(a).
次に、基板１をＣＶＤ装置内で１０００°Ｃに保持した
まま、ＨｃｌガスとＳｉＨ，ガスをそれぞれガス分圧Ｔ
、２ Ｘ １０−３ｂ ａ ｒ、 ７．３ Ｘ １０−
’ｂａｒで１０秒間供給してＣＶＤ反応を行わせる。Next, while holding the substrate 1 at 1000°C in the CVD apparatus, HCl gas and SiH gas are heated at a gas partial pressure of T.
, 2 X 10-3b a r, 7.3 X 10-
'bar for 10 seconds to carry out the CVD reaction.
このＣＶＤ反応により、第１図（ｂ）に示すように前記
酸化膜２の表面上に、例えば約１０００〜数１０００人
径のシリコンの２次元核群３が形成密度約１０４〜１０
５個／ｃ′ＩＮで微小島状に形成される。なお、上記反
応温度より低温の例えば５６０°Ｃにおいて、Ｓ ｉＨ
ａ系のガスを例えは０．８ Ｔ 。As a result of this CVD reaction, as shown in FIG. 1(b), two-dimensional silicon nuclei 3 having a diameter of approximately 1000 to several 1000 persons are formed on the surface of the oxide film 2 at a density of approximately 104 to 10
5 pieces/c'IN are formed in the shape of micro islands. In addition, at a temperature lower than the above reaction temperature, for example, 560°C, SiH
For example, a-type gas is 0.8 T.
ｒｒ等の低圧で短時間供給し、２次元核群３を形成する
ようにしてもよい。The two-dimensional nucleus group 3 may be formed by supplying for a short time at a low pressure such as rr.
このように形成された２次元核群３に対し、Ｈｃｌガス
をガス分圧７．２Ｘ １０−’ｂ ａ ｒで供給しなが
ら１０００°Ｃでエツチング処理する。このエツチング
反応により微小な２次元核群３は除去されるとともに、
第１図（ｃ）に示すように２次元核群３の核種は例えば
数１０〜数１００人、形成密度は１０２〜１０３個／ｄ
となり、エツチング反応以前に比べて核種で１／１０．
形成密度で１／１００程に低減される。このようにエツ
チング処理により核種および形成密度が適切に制御され
た２次元核群３０を結晶子として後述する非晶質膜の再
結晶を行うことにより、結晶子が多すぎることによる粒
界の増大を防ぎ、大粒径化を促進することができる。な
お、上述のＣＶＤの段階で核種および形成密度が制御さ
れた２次元核群３を形成することにより、エツチング処
理せずに２次元核群３の上に後述する非晶質膜を堆積す
るようにしてもよい。The two-dimensional nucleus group 3 thus formed is subjected to an etching process at 1000° C. while supplying HCl gas at a gas partial pressure of 7.2×10 −’bar. Through this etching reaction, the minute two-dimensional nuclei group 3 is removed, and
As shown in Fig. 1(c), the number of nuclides in the two-dimensional nuclear group 3 is, for example, several tens to several hundreds, and the formation density is 102 to 103 pieces/d.
This means that the number of nuclides is 1/10 compared to before the etching reaction.
The formation density is reduced to about 1/100. By recrystallizing the amorphous film, which will be described later, using the two-dimensional nucleus groups 30 whose nuclides and formation density have been appropriately controlled by the etching process as crystallites, it is possible to eliminate the increase in grain boundaries due to too many crystallites. can be prevented and the increase in particle size can be promoted. Note that by forming the two-dimensional nucleus group 3 with controlled nuclides and formation density in the above-mentioned CVD step, it is possible to deposit an amorphous film, which will be described later, on the two-dimensional nucleus group 3 without etching. You may also do so.
次に、同−ＣＶＤ装置内にＨｅガス、Ｎ２ガス等の不活
性ガスを供給しながら、２次元核群３０に対して１２０
０°Ｃで５時間の加熱処理を行う。Next, while supplying an inert gas such as He gas or N2 gas into the same CVD apparatus, the two-dimensional nucleus group 30 is
Heat treatment is performed at 0°C for 5 hours.
この熱アニール処理により、２次元核群３０は再結晶化
され、単結晶に近い状態となる。なお、この熱アニール
処理を施した直後に、上述のエツチング処理を行うよう
にしてもよい。Through this thermal annealing treatment, the two-dimensional nucleus group 30 is recrystallized and becomes close to a single crystal. Note that the above-described etching process may be performed immediately after this thermal annealing process.
次に、熱アニール処理された２次元核群３００に対し、
温度を５６０℃に低下させるとともに１．２０％Ｈｅガ
ス希釈されたＳｉＨ，ガスを０．８Ｔｏｒｒで供給する
ことにより、第１図（ｅ）に示すように、例えば約２０
００人のシリコンの非晶質膜４を形成する。なお、この
ように非晶質膜４を形成する以前の２次元核群３００に
対しては、あるいはエツチング処理を行わない場合はＣ
ＶＤで形成された２次元核群３に対しても、それぞれ酸
素や水蒸気および空気等の酸性ガスとの接触を極力さけ
るようにしなければならない、すなわち、熱アニールに
より再結晶化され単結晶に近（なったと考えられる２次
元核群３０００表面が酸化膜に覆われていると、その上
に堆積された非晶質膜４の結晶子として再結晶化に関与
する際に、この非晶質に面方位等の結晶化情報を伝達で
きなくなってしまうためである。Next, for the thermally annealed two-dimensional nucleus group 300,
By lowering the temperature to 560°C and supplying SiH gas diluted with 1.20% He gas at 0.8 Torr, as shown in FIG.
An amorphous film 4 of 0.000 silicon is formed. Note that the two-dimensional nucleus group 300 before forming the amorphous film 4 in this way, or when no etching process is performed, C
For the two-dimensional nuclei group 3 formed by VD, contact with acidic gases such as oxygen, water vapor, and air must be avoided as much as possible. In other words, they are recrystallized by thermal annealing and become close to single crystals. (If the surface of the two-dimensional nucleus group 3000 that is thought to have become This is because crystallization information such as plane orientation cannot be transmitted.
次に、Ｈｅガス、Ｎｔガス等の不活性ガスの中で、非晶
質膜４で覆われた基板１を５６０ ”Ｃで５時間、６０
０°Ｃで１０時間、１０００°Ｃで１０時間、１２００
°Ｃで６時間加熱処理する。このような熱アニール処理
を施すことにより、前記熱アニール処理された２次元績
群３００を結晶子として非晶質膜４が再結晶化され、例
えば数μｍ以上の大粒径からなるシリコンの多結晶膜５
が形成される。Next, in an inert gas such as He gas or Nt gas, the substrate 1 covered with the amorphous film 4 was heated at 560"C for 5 hours at 60°C.
10 hours at 0°C, 10 hours at 1000°C, 1200
Heat treatment at °C for 6 hours. By performing such thermal annealing treatment, the amorphous film 4 is recrystallized using the two-dimensional grain group 300 subjected to the thermal annealing treatment as crystallites, and a silicon polyamide film having a large grain size of, for example, several μm or more is recrystallized. Crystal film 5
is formed.
以上実施例によれば、酸化膜２の表面に再結晶化のため
の核となる２次元績群３を所要の密度で形成するか、あ
るいは一端形成された２次元績群３にエッチラグ処理等
を施すことにより所要の密度に調節し、このようにして
得られた２次元績群３０を熱アニールにより再結晶化た
上に非晶質膜４を堆積し、この非晶質膜４に熱アニール
を行い、前記熱アニールにより単結晶に近い状態となっ
た２次元績群３００を結晶子として非晶質膜４の再結晶
化をスムーズに進め、大粒径で均質化が図られた多結晶
膜５を得ている。また、レーザ光や電子ビームを用いた
形成方法のようにビーム径によって再結晶される領域が
限定されることがなく、用いるＣＶＤ装置を選定するこ
とにより多数の大面積基板を処理することが可能である
ため、結晶性が良好な多結晶膜５を安価に形成すること
ができる。According to the embodiments described above, the two-dimensional grain groups 3 that serve as nuclei for recrystallization are formed on the surface of the oxide film 2 at a required density, or the once-formed two-dimensional grain groups 3 are subjected to an etch lag treatment, etc. The two-dimensional crystal group 30 obtained in this way is recrystallized by thermal annealing, and an amorphous film 4 is deposited on the amorphous film 4. Annealing is performed, and recrystallization of the amorphous film 4 is smoothly proceeded by using the two-dimensional grain group 300, which has become close to a single crystal due to the thermal annealing, as crystallites, and the amorphous film 4 is homogenized with a large grain size. A crystal film 5 is obtained. In addition, unlike forming methods using laser light or electron beams, the area to be recrystallized is not limited by the beam diameter, and it is possible to process a large number of large-area substrates by selecting the CVD equipment to be used. Therefore, the polycrystalline film 5 with good crystallinity can be formed at low cost.
なお、上記実施例においては、２次元績群３を減圧ＣＶ
Ｄで形成しているが、その他プラズマＣＶＤ、ＭＯＣＶ
Ｄ、光ＣＶＤ、スパッタ法、蒸着法、ＥＣＲプラズマＣ
ＶＤ法などの一般に非晶質半導体もしくは多結晶半導体
を得るために行われている方法を用いてもよい。In addition, in the above embodiment, the two-dimensional performance group 3 is
Although it is formed using D, other methods such as plasma CVD and MOCV
D, photo CVD, sputtering method, vapor deposition method, ECR plasma C
A method generally used to obtain an amorphous semiconductor or a polycrystalline semiconductor, such as the VD method, may be used.
また上記実施例においては、熱酸化により形成した酸化
膜２の上に２次元績群を堆積するようにしているが、熱
酸化による酸化膜２以外にＣＶＤによる酸化膜、窒化膜
あるいは炭化膜や、Ａ１゜０３ 、Ｓ ｉＣ，ガラス基
板等であってもよい。Further, in the above embodiment, a two-dimensional film is deposited on the oxide film 2 formed by thermal oxidation, but in addition to the oxide film 2 formed by thermal oxidation, an oxide film, a nitride film, or a carbide film formed by CVD is deposited. , A1°03, SiC, glass substrate, etc. may be used.
また上記実施例においては、シリコンの基板１に酸化膜
２を形成し、この酸化膜２の上にシリコンの多結晶膜５
を形成するというシリコン半導体の形成プロセスを取り
上げているが、ゲルマニウム半導体やガリウムひ素手導
体等の形成プロセスにも応用できることはいうまでもな
い。Further, in the above embodiment, an oxide film 2 is formed on a silicon substrate 1, and a silicon polycrystalline film 5 is formed on this oxide film 2.
The present invention deals with the process of forming silicon semiconductors, but it goes without saying that it can also be applied to the process of forming germanium semiconductors, gallium arsenide conductors, etc.
以上説明したように本発明の多結晶膜の形成方法によれ
ば、基板上に結晶子を所定の密度で形成し、この結晶子
をアニール処理により再結晶化し、この結晶子の上に非
晶質膜を堆積し、アニール処理により結晶子を核として
非晶質膜の再結晶化をスムーズに進めるようにしている
ため、適切な密度で均一に結晶子を形成することにより
、大粒径化と均質化を図ることができる。As explained above, according to the method for forming a polycrystalline film of the present invention, crystallites are formed on a substrate at a predetermined density, the crystallites are recrystallized by annealing treatment, and amorphous crystallites are formed on the crystallites. This method uses crystallites as nuclei to smoothly recrystallize the amorphous film by depositing a thin film, and by annealing it, the crystallites are formed uniformly at an appropriate density, resulting in large grain size. It is possible to achieve homogenization.
第１図（ａ）は酸化膜を形成した状態を示す基板の部分
断面図、第１図（ｂ）は酸化膜の上にＣＶＤで２次元績
群を形成した状態を示す部分断面図。
第１図（ｃ）はスパッタ処理により２次元績群を低減化
させた状態を示す部分断面図、第１図（ｄ）は熱アニー
ルされた基板の状態を示す部分断面図。
第１図（ｅ）は２次元績群の上に非晶質膜を堆積させた
状態を示す部分断面図、第１図（ｆ）は非晶質膜を熱ア
ニールにより再結晶化した状態を示す部分断面図である
。
１ 、、、、基板 ２ 、、、、酸化膜３
．３０，３００．、、．２次元績群FIG. 1(a) is a partial cross-sectional view of a substrate showing a state in which an oxide film is formed, and FIG. 1(b) is a partial cross-sectional view showing a state in which a two-dimensional layer is formed on the oxide film by CVD. FIG. 1(c) is a partial cross-sectional view showing a state in which two-dimensional groups are reduced by sputtering, and FIG. 1(d) is a partial cross-sectional view showing a state of a thermally annealed substrate. Figure 1(e) is a partial cross-sectional view showing the state in which an amorphous film is deposited on a two-dimensional layer, and Figure 1(f) shows the state in which the amorphous film is recrystallized by thermal annealing. FIG. 1. Substrate 2. Oxide film 3
．． 30,300. ,,． 2D performance group
Claims (1)
所定の密度で形成し、この結晶子をアニール処理により
再結晶化し、この結晶子の上に非晶質膜を堆積し、アニ
ール処理によりこの非晶質膜の再結晶化を行うことを特
徴とする多結晶膜の形成方法。Crystallites that serve as nuclei for recrystallization of an amorphous film are formed on a substrate at a predetermined density, these crystallites are recrystallized by annealing treatment, and an amorphous film is deposited on top of these crystallites. A method for forming a polycrystalline film, characterized in that the amorphous film is recrystallized by an annealing treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63074755A JP2743370B2 (en) | 1988-03-30 | 1988-03-30 | Method of forming polycrystalline film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63074755A JP2743370B2 (en) | 1988-03-30 | 1988-03-30 | Method of forming polycrystalline film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01248511A true JPH01248511A (en) | 1989-10-04 |
| JP2743370B2 JP2743370B2 (en) | 1998-04-22 |
Family
ID=13556405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63074755A Expired - Fee Related JP2743370B2 (en) | 1988-03-30 | 1988-03-30 | Method of forming polycrystalline film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2743370B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038798A (en) * | 1989-06-06 | 1991-01-16 | Sanyo Electric Co Ltd | Production of polycrystal silicon film |
| JPH0370123A (en) * | 1989-08-10 | 1991-03-26 | Canon Inc | Formation of crystalline semiconductor film |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
| KR100270620B1 (en) * | 1992-10-19 | 2000-12-01 | 윤종용 | Manufacturing method of poly crystal silicon layer |
| KR100494321B1 (en) * | 1997-12-31 | 2005-08-31 | 주식회사 하이닉스반도체 | Polycrystalline Silicon Film Formation Method of Semiconductor Device |
| US8048773B2 (en) | 2009-03-24 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61260621A (en) * | 1985-05-15 | 1986-11-18 | Matsushita Electric Ind Co Ltd | Retreatment for amorphous silicon film or polycrystalline silicon film |
| JPS6276715A (en) * | 1985-09-30 | 1987-04-08 | Sony Corp | Forming method for single crystal silicon thin film |
-
1988
- 1988-03-30 JP JP63074755A patent/JP2743370B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61260621A (en) * | 1985-05-15 | 1986-11-18 | Matsushita Electric Ind Co Ltd | Retreatment for amorphous silicon film or polycrystalline silicon film |
| JPS6276715A (en) * | 1985-09-30 | 1987-04-08 | Sony Corp | Forming method for single crystal silicon thin film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038798A (en) * | 1989-06-06 | 1991-01-16 | Sanyo Electric Co Ltd | Production of polycrystal silicon film |
| JPH0370123A (en) * | 1989-08-10 | 1991-03-26 | Canon Inc | Formation of crystalline semiconductor film |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
| KR100270620B1 (en) * | 1992-10-19 | 2000-12-01 | 윤종용 | Manufacturing method of poly crystal silicon layer |
| KR100494321B1 (en) * | 1997-12-31 | 2005-08-31 | 주식회사 하이닉스반도체 | Polycrystalline Silicon Film Formation Method of Semiconductor Device |
| US8048773B2 (en) | 2009-03-24 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2743370B2 (en) | 1998-04-22 |
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