JPH01243531A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01243531A
JPH01243531A JP63069528A JP6952888A JPH01243531A JP H01243531 A JPH01243531 A JP H01243531A JP 63069528 A JP63069528 A JP 63069528A JP 6952888 A JP6952888 A JP 6952888A JP H01243531 A JPH01243531 A JP H01243531A
Authority
JP
Japan
Prior art keywords
pedestal
pellet
lead
semiconductor device
protruding parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63069528A
Other languages
Japanese (ja)
Inventor
Hisashi Yoshida
吉田　恒
Seiichi Shirakawa
白川　清一
Junko Hashimoto
橋本　淳子
Toru Saga
徹 嵯峨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Akita Electronics Systems Co Ltd
Original Assignee
Hitachi Ltd
Akita Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Akita Electronics Co Ltd filed Critical Hitachi Ltd
Priority to JP63069528A priority Critical patent/JPH01243531A/en
Publication of JPH01243531A publication Critical patent/JPH01243531A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To evacuate a gas appropriately and to execute a good die bonding operation by a method wherein a semiconductor pellet is fixed and bonded, by using a conductive resin adhesive, to two or more protruding parts of a supporting body where the two or more protruding parts have been formed on a pedestal. CONSTITUTION:A lead frame 3 is composed of a pedestal 3A, a suspension lead 3C, an inner lead 3D, a dam 3E, an outer lead 3F, an inner frame 3G and an outer frame 3H. During this process, two or more protruding parts 3B are formed on the pedestal 3A of the frame 3. A paste 4 is coated on the pedestal 3A by a dropping method or a marking method. A pellet 1 is fixed and bonded to the pedestal 3A having the protruding parts 3B. Then, when the pellet 1 has been die-bonded to the protruding parts 3B, a gap is produced between the protruding part 3B and the protruding part 3B; a gas excapes via the gap. By this setup, a good die bonding operation can be executed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、導電性樹脂接着剤を用いて
半導体ペレットをリードフレームナトの支持体上に固着
させる際に当該接着剤からガスが発生したときに、ガス
抜きを行って適切なペレット付けを実施することができ
る技術に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to semiconductor devices, and relates to semiconductor devices in which gas is released from the adhesive when a semiconductor pellet is fixed onto a support of a lead frame nut using a conductive resin adhesive. It relates to a technology that can perform appropriate pelleting by degassing when gas occurs.

〔従来の技術〕[Conventional technology]

半導体ペレット（以下単にペレットとり・う）を、リー
ドフレームなどの支持体の台座（タブとかダイアタッチ
部などとも称される）に、導電性樹脂接着剤を用いて、
固着（ダイボンディングとかペレット付けなどと称され
る）することが行われている。導電性樹脂接着法と称さ
れ、当該接着剤の主組成は、一般に、Ａｇ粉やＡＡ粉や
Ａｕ粉などの金属粉と、エポキシ樹脂などの合成樹脂と
、ジメチルアセトアミドやＮ−メチルピロリドンなどの
溶剤とから成っており、ペースト状で、当該ペースト状
の接着剤を塗布し、当該樹脂を熱硬化（キエア）させて
、上記グイボンディングを行う。A semiconductor pellet (hereinafter simply referred to as pellet) is attached to a base (also called a tab or die attach part) of a support such as a lead frame using a conductive resin adhesive.
Fixing (referred to as die bonding, pellet attachment, etc.) is performed. It is called conductive resin bonding method, and the main composition of the adhesive is generally metal powder such as Ag powder, AA powder, or Au powder, synthetic resin such as epoxy resin, and dimethylacetamide or N-methylpyrrolidone. The glue bonding is performed by applying the paste-like adhesive, which is made of a solvent, and then heat-curing the resin.

なお、当該導電性樹脂接着法について述べた特許の例と
しては、実公昭５０−２９４１５号公報が挙げられる。Incidentally, an example of a patent describing the conductive resin adhesion method is Japanese Utility Model Publication No. 50-29415.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかるに、当該樹脂接着法によれば、低温で処理でき、
ペレットにクラックが入らないなどの利点がある一方で
、熱硬化させることによる接着剤中の溶剤の蒸発および
樹脂硬化反応に起因するガスが、接着剤全体から発生し
、当該ガスがペレットを持上げしたり、ペレットを移動
させたりする。However, according to the resin adhesion method, it can be processed at low temperature,
While there are advantages such as no cracking of the pellets, gas is generated throughout the adhesive due to the evaporation of the solvent in the adhesive and the resin curing reaction due to heat curing, and the gas lifts the pellets. or move the pellets.

その為、ペレットと支持体との間の接着強度か充分でな
かったり、また、ペレットと支持体との間をボンディン
グワイヤにより結線（ワイヤボンディング）しようとす
るときにペレットが傾いたりあるいは所定のボンディン
ダ位置になかったりするので、そのワイヤボンディング
に支障を来たりする。As a result, the adhesive strength between the pellet and the support may not be sufficient, or when attempting to connect the pellet and the support with a bonding wire (wire bonding), the pellet may be tilted, or the specified bonder may not be properly connected. If the wire is not in the correct position, the wire bonding may be hindered.

かかる不都合は、高集積素子でペレットサイズが大型化
するに従い顕著なものとなってきている。Such inconveniences have become more prominent as the pellet size increases in highly integrated devices.

さらに、封止用ガラスを用いてノ１−メチツクシールし
ようとする場合には、より高温下に接着剤がおかれるの
で、そのガスの発生量も多く、より一層問題を大きくし
ている。Furthermore, when sealing is attempted using a sealing glass, the adhesive is placed at a higher temperature, which generates a large amount of gas, further aggravating the problem.

本発明はかかる従来技術の有する欠点を解消し、導電性
樹脂接着剤を用いたダイボンディングにおいて良好な接
着強度を確保し、また、ワイヤボンディングに支障を与
えない技術を提供することを目的とする。The present invention aims to eliminate the drawbacks of such conventional techniques, ensure good adhesive strength in die bonding using a conductive resin adhesive, and provide a technique that does not interfere with wire bonding. .

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔課題を解決するための手段〕[Means to solve the problem]

本願において開示される発明のうち代表的なものの概要
な蘭単に説明すれば、下記のとおりである。A brief summary of typical inventions disclosed in this application is as follows.

本発明ではダイボンディングする支持体の台座を、従来
のごとく平坦な面とせずに、複数の突起部を有するよう
にする。特に、当該突起部の上面は平坦なペレットを載
置することができる面とするとよい。In the present invention, the pedestal of the support body to be die-bonded is not a flat surface as in the conventional case, but has a plurality of protrusions. In particular, the upper surface of the protrusion may be a surface on which a flat pellet can be placed.

〔作用〕[Effect]

このように、台座が突起部を有するようになっているの
で、当該突起部上にペレットをダイボンディングしたと
きに、突起部と突起部との間に間隙ができ、当該間隙を
介してガスを逃が丁ことかできる。In this way, since the pedestal has a protrusion, when a pellet is die-bonded onto the protrusion, a gap is created between the protrusions, and gas is allowed to flow through the gap. It can also be called escape.

従来は台座の面が全体に平坦なのでガスの逃げ場がなく
、ガスが接着剤中にこもってしまいペレットを浮上らせ
たりなどしていたが、本発明によれば適当なガス抜きが
行われるので、良好なダイボンディングが実施でき、ワ
イヤボンディングも良好に行なえるようになった。Conventionally, the surface of the pedestal was completely flat, so there was no place for the gas to escape, and the gas would get trapped in the adhesive, causing the pellets to float, etc. However, with the present invention, appropriate degassing is performed. It has become possible to perform good die bonding and wire bonding.

〔実施例〕〔Example〕

次に、本発明の実施例を図面に基づいて説明する。 Next, embodiments of the present invention will be described based on the drawings.

実施例１゜ 第１図は本発明を樹脂封止型半導体装置に適用した例を
示す。Embodiment 1 FIG. 1 shows an example in which the present invention is applied to a resin-sealed semiconductor device.

第１図にて、１はペレット、２はボンディングワイヤ、
３はリードフレーム、３Ａは該リードフレームの台座、
４は導電性樹脂接着剤（以下ペーストという）、５は樹
脂封止部、６は間隙である。In Figure 1, 1 is a pellet, 2 is a bonding wire,
3 is a lead frame, 3A is a pedestal of the lead frame,
4 is a conductive resin adhesive (hereinafter referred to as paste), 5 is a resin sealing portion, and 6 is a gap.

同図に示すように、リードフレーム３の台座３Ａには複
数の突起部３Ｂが形成されている。As shown in the figure, a plurality of protrusions 3B are formed on the pedestal 3A of the lead frame 3.

第２図はリードフレームの一笑施例平面図で、第３図は
このリードフレームの要部斜視図を示す。FIG. 2 is a plan view of an example of the lead frame, and FIG. 3 is a perspective view of the main parts of this lead frame.

このリードフレーム３は、その中央の突起部３Ｂを有す
る台座３Ａと、該台座３Ａを支持しているタブ吊りリー
ド３Ｃと、台座３人の周辺に配設されたインナーリード
３Ｄと、モールド時の樹脂の流れ止めなどの目的で設け
られているダム３Ｅと、ダム３Ｅの外側のアクタ−リー
ド３Ｆと、内枠３Ｇと外枠３Ｈとから成っている。This lead frame 3 consists of a pedestal 3A having a central protrusion 3B, a tab suspension lead 3C supporting the pedestal 3A, an inner lead 3D disposed around the three pedestals, and a It consists of a dam 3E provided for the purpose of stopping resin from flowing, an actor lead 3F outside the dam 3E, an inner frame 3G, and an outer frame 3H.

白眼樹脂封止型半導体装置の製造は、例えば、次のよう
にして行われる。すなわち、先ず、リードフレーム３の
突起部３Ｂを有する台座３Ａ上に、ペレット１を固着す
る。ペレット１の固着に先立ち、ペースト４を、台座３
Ａに滴下方式又はマーク方式などＫより塗布する。その
際、ペースト４は突起部３Ｂの上面に付着した後に、突
起部３Ｂの斜面に沿い下方に流れ落ちる。The white eye resin-sealed semiconductor device is manufactured, for example, as follows. That is, first, the pellet 1 is fixed onto the pedestal 3A of the lead frame 3 having the projection 3B. Prior to fixation of pellet 1, paste 4 is applied to pedestal 3.
Apply to A using K, such as dropping method or mark method. At this time, the paste 4 adheres to the upper surface of the protrusion 3B and then flows down along the slope of the protrusion 3B.

接着強度を上げるには、第４図に示すように、突起部３
Ｂの上部に、平坦なペレットの載置面３Ｂ′を形成して
おくことが好ましい。ペースト４の塗布された台座３Ａ
上にペレット１をマクントし、次いで、加熱し、例えば
１００〜４００Ｃ程のキュア温度で、熱硬化を行なう。To increase the adhesive strength, as shown in Figure 4, the protrusion 3
It is preferable to form a flat pellet mounting surface 3B' on the top of B. Pedestal 3A with paste 4 applied
Pellets 1 are placed on top, and then heated and thermally cured, for example, at a curing temperature of about 100 to 400C.

突起部３Ｂと突起部３Ｂとの間には間隙６が形成され、
当該キュア工程に於いて、ガスがこの間隙６を通して逃
散する。次いで、ボンディングワイヤ２により、ペレッ
ト１とリードフレーム３のインナーリード３Ｄとを電気
的に接続（ワイヤボンディング）する。A gap 6 is formed between the protrusions 3B and 3B,
During the curing process, gas escapes through this gap 6. Next, the pellet 1 and the inner lead 3D of the lead frame 3 are electrically connected by the bonding wire 2 (wire bonding).

当該組立後に、モールド金型に当該組立品を入れ、樹脂
をモールドして、樹脂封止部５を形成する。After the assembly, the assembled product is placed in a mold and resin is molded to form the resin sealing portion 5.

切断工程などを経て、第１図に示すような、アウターリ
ード３Ｆの引き出しされた樹脂封止型半導体装置を得る
。Through a cutting process and the like, a resin-sealed semiconductor device with outer leads 3F drawn out as shown in FIG. 1 is obtained.

第５図は当該樹脂封止型半導体装置７の一部切欠斜視図
を示す。FIG. 5 shows a partially cutaway perspective view of the resin-sealed semiconductor device 7. As shown in FIG.

実施例２゜ 第６図は本発明の他の実施例を示す半導体装置の断面図
で、本発明をガラス封止の気密封止型半導体装置に適用
した例を示す。Embodiment 2 FIG. 6 is a sectional view of a semiconductor device showing another embodiment of the present invention, showing an example in which the present invention is applied to a hermetically sealed semiconductor device sealed with glass.

第１図と共通する符号は同一の機能を示すのでその説明
する。The same reference numerals as those in FIG. 1 indicate the same functions, so they will be explained.

このガラス封止型半導体装貨８では、パッケージペース
９のペレット搭載のための溝部９Ａに突起部９Ｂが形成
さｉており、当該ペース９とキャップ１０との間を封止
用ガラス１１により封止する。In this glass-sealed semiconductor package 8, a protrusion 9B is formed in the groove 9A for mounting the pellet of the package paste 9, and the space between the paste 9 and the cap 10 is sealed with a sealing glass 11. Stop.

このガラス封止では、４００〜５００Ｃ程度の封止已度
で当該封止用ガラス１１を＠融させ、ペース９とキャッ
プ１０との封着を行う。このように、封止温度が樹脂封
止の場合の１５０〜２００Ｃに比べて高いので、ペース
ト４からガスが出品（１゜ 本発明に使用されるペレット１は、例えばシリコン単結
晶基板から成り、周知の技術によってこのペレット（チ
ップ）内には多数の回路素子が形成され、１つの回路機
能が与えられている。回路素子の具体例は、例えばＭＯ
Ｓ）ランジスタから成り、これらの回路素子によって、
例えば論理回路およびメモリの回路機能が形成されてい
る。In this glass sealing, the sealing glass 11 is melted at a sealing strength of about 400 to 500 C to seal the paste 9 and the cap 10 together. As described above, since the sealing temperature is higher than 150 to 200 C in the case of resin sealing, gas is released from the paste 4 (1°). A large number of circuit elements are formed within this pellet (chip) by a well-known technique and are given one circuit function.Specific examples of circuit elements include, for example, MO
S) consists of transistors, and these circuit elements:
For example, logic circuits and memory circuit functions are formed.

ボンディングワイヤ２は、例えばＡｔｊｉ’ＰＡＡ脚に
より構成される。The bonding wire 2 is composed of, for example, an Atji'PAA leg.

リードフレーム３は、例えばＮｉ−Ｆｅ系合金より成る
、 便脂封止部５の形成に使用される樹脂は、例えばエポキ
シ樹脂より成る。The lead frame 3 is made of, for example, a Ni-Fe alloy. The resin used to form the toilet fat sealing portion 5 is made of, for example, an epoxy resin.

ペース９ＪＰキヤツプ１０は、例えばセラミック材によ
り構成される。The PACE 9JP cap 10 is made of, for example, a ceramic material.

本発明によればリードフレーム３やパッケージペース９
に突起部３Ａや９Ｂを形成するようにしたので、これら
突起部３Ａ（９Ｂ）の間隙６かもガスが抜け、ペレット
１が持上り移動したり、またはガス気泡により浮いた状
態になったりしないので、良好なペレット接着強度が得
られ、また、ワイヤボンディング工程に支障を与えたり
することが防止できた。According to the present invention, the lead frame 3 and the package paste 9
Since the protrusions 3A and 9B are formed in the pellets, gas can also escape from the gaps 6 between the protrusions 3A and 9B, and the pellet 1 will not be lifted up and moved or become floating due to gas bubbles. , Good pellet adhesion strength was obtained, and it was possible to prevent any hindrance to the wire bonding process.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor.

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるデエアルインライン
のプラスチックパッケージやセラミックパッケージにつ
いて適用した場合に、ついて説明したが、それに限定さ
れるものではなく、その他ペーストを使用する各種の半
導体装置に適用することができる。In the above explanation, the invention made by the present inventor was mainly applied to the field of application, which is the field of application, which is the field of application, such as a plastic package or a ceramic package for air in-line, but the invention is not limited thereto. It can also be applied to various semiconductor devices that use other pastes.

〔発明の効果〕〔Effect of the invention〕

本願において開示さｎる発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとうりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

本発明によｉばペーストを用いたダイボンディングして
なる半導体装置において良好なグイボンディングを行な
うことができた。According to the present invention, good bonding could be performed in a semiconductor device formed by die bonding using paste.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例を示す半導体装置の断面図、 第２図は本発明の実施例を示すリードフレームの平面図
、 第３図はリードフレームの台座の要部斜視図、第４図は
台座の他の例を示す断面図、 第５１図は本発明の実施例を示す半導体装置の一部切欠
斜視図、 第６図は本発明の他の実施例を示す半導体装置の断面図
である。 １・・・ベレット、２・・・ポンディングワイヤ、３・
・・リードフレーム、３Ａ・・・台座、３Ｂ・・・突起
部、３Ｃ・・・タブ吊りリード、３Ｄ・・・インナーリ
ード、３Ｅ・・・ダム、３Ｆ・・・アラターリード、３
Ｇ・・・内枠、３Ｈ・・・外枠、４・・・導電性樹脂接
着剤、５・・・樹脂封止部、６・・・間隙、７・・・樹
脂封止型半導体装置、８・・・ガラス封止型半導体装置
、９・・・パッケージペース、９Ａ・・・溝部、９Ｂ・
・・突起部、１０・・・キャップ、１１・・・封止用ガ
ラス。 第　３　図 第４図FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention, FIG. 2 is a plan view of a lead frame showing an embodiment of the present invention, FIG. 3 is a perspective view of main parts of a pedestal of the lead frame, and FIG. 51 is a partially cutaway perspective view of a semiconductor device showing an embodiment of the present invention; FIG. 6 is a sectional view of a semiconductor device showing another embodiment of the present invention. It is. 1...Bellet, 2...Ponding wire, 3.
...Lead frame, 3A...Pedestal, 3B...Protrusion, 3C...Tab hanging lead, 3D...Inner lead, 3E...Dam, 3F...Alter lead, 3
G... Inner frame, 3H... Outer frame, 4... Conductive resin adhesive, 5... Resin sealing portion, 6... Gap, 7... Resin sealed semiconductor device, 8...Glass sealed semiconductor device, 9...Package paste, 9A...Groove portion, 9B...
... Protrusion, 10... Cap, 11... Sealing glass. Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 １、半導体ペレットを固着させる台座に複数の突起物を
形成してなる支持体の当該突起部上に、導電性樹脂接着
剤により半導体ペレットを固着せしめて成ることを特徴
とする半導体装置。 ２、半導体装置が、ガラス封止の気密封止型半導体装置
である、請求項１記載の半導体装置。[Claims] 1. The semiconductor pellet is fixed to the protrusion part of the support body, which is formed by forming a plurality of protrusions on the pedestal to which the semiconductor pellet is fixed, using a conductive resin adhesive. semiconductor devices. 2. The semiconductor device according to claim 1, wherein the semiconductor device is a hermetically sealed semiconductor device sealed with glass.
JP63069528A 1988-03-25 1988-03-25 Semiconductor device Pending JPH01243531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63069528A JPH01243531A (en) 1988-03-25 1988-03-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63069528A JPH01243531A (en) 1988-03-25 1988-03-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH01243531A true JPH01243531A (en) 1989-09-28

Family

ID=13405314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63069528A Pending JPH01243531A (en) 1988-03-25 1988-03-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH01243531A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125458U (en) * 1991-05-07 1992-11-16 山口日本電気株式会社 Lead frame
EP0582084A2 (en) * 1992-08-06 1994-02-09 Motorola, Inc. Semiconductor leadframe and package
US5440170A (en) * 1990-09-10 1995-08-08 Fujitsu Limited Semiconductor device having a die pad with rounded edges and its manufacturing method
EP1134806A3 (en) * 2000-03-16 2003-11-12 Microchip Technology Inc. Stress reducing lead-frame for plastic encapsulation
JP2011171766A (en) * 2011-05-27 2011-09-01 Seiko Instruments Inc Semiconductor device
DE10221085B4 (en) * 2002-05-11 2012-07-26 Robert Bosch Gmbh Assembly having a connection device for contacting a semiconductor device and manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5440170A (en) * 1990-09-10 1995-08-08 Fujitsu Limited Semiconductor device having a die pad with rounded edges and its manufacturing method
JPH04125458U (en) * 1991-05-07 1992-11-16 山口日本電気株式会社 Lead frame
EP0582084A2 (en) * 1992-08-06 1994-02-09 Motorola, Inc. Semiconductor leadframe and package
EP0582084A3 (en) * 1992-08-06 1994-07-27 Motorola Inc Semiconductor leadframe and package
EP1134806A3 (en) * 2000-03-16 2003-11-12 Microchip Technology Inc. Stress reducing lead-frame for plastic encapsulation
DE10221085B4 (en) * 2002-05-11 2012-07-26 Robert Bosch Gmbh Assembly having a connection device for contacting a semiconductor device and manufacturing method
JP2011171766A (en) * 2011-05-27 2011-09-01 Seiko Instruments Inc Semiconductor device

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