JPH01241839A - Device for holding semiconductor wafer - Google Patents
Device for holding semiconductor waferInfo
- Publication number
- JPH01241839A JPH01241839A JP63068109A JP6810988A JPH01241839A JP H01241839 A JPH01241839 A JP H01241839A JP 63068109 A JP63068109 A JP 63068109A JP 6810988 A JP6810988 A JP 6810988A JP H01241839 A JPH01241839 A JP H01241839A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor wafer
- insulator
- sheet
- plastic sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000002985 plastic film Substances 0.000 claims abstract description 20
- 239000002470 thermal conductor Substances 0.000 claims 2
- 239000000615 nonconductor Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 15
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 7
- 239000010935 stainless steel Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000976 Electrical steel Inorganic materials 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 3
- 239000004809 Teflon Substances 0.000 abstract description 3
- 229920006362 Teflon® Polymers 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 229920001721 polyimide Polymers 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010285 flame spraying Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 9
- 239000000470 constituent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は半導体ウェハの保持装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a semiconductor wafer holding device.
（従来の技術） 従来の半導体ウェハの保持装置の一例を第３図に示す。(Conventional technology) An example of a conventional semiconductor wafer holding device is shown in FIG.
銅、アルミニウム等の、熱伝導の良い金属で基板８を作
る。該基板８には恒温水等を通して温度調整する為の温
度調整用空間９が形成されている。The substrate 8 is made of a metal with good thermal conductivity, such as copper or aluminum. A temperature adjustment space 9 is formed in the substrate 8 to adjust the temperature by passing constant temperature water or the like.
基板８上には静電チャック機能を生じせしめる為のプラ
ス電極４，６、マイナス電極５，７が設けられるが該電
極間及び基板８との間で電気的短絡が生じない様にする
為絶縁性のプラスチックシート３が設けられている。Positive electrodes 4, 6 and negative electrodes 5, 7 are provided on the substrate 8 to provide an electrostatic chuck function, but they are insulated to prevent electrical short circuits between the electrodes and with the substrate 8. A plastic sheet 3 made of plastic is provided.
枝電極４，５，６．７及びプラスチックシー１へ３の上
部には、半導体ウェハ１に静電チャック力を発生し、又
基板８を保護する為にプラスチックシート２が設けられ
ている。A plastic sheet 2 is provided above the branch electrodes 4, 5, 6.7 and the plastic sheet 1 to 3 to generate an electrostatic chucking force on the semiconductor wafer 1 and to protect the substrate 8.
これらプラスチックシート２，３の材料としては電気絶
縁性、耐熱性を考慮してテフロンやポリイミド等の粘着
シートが使用されていた。As materials for these plastic sheets 2 and 3, adhesive sheets such as Teflon and polyimide have been used in consideration of electrical insulation and heat resistance.
（発明が解決しようとする課題）
従来の半導体ウェハの保持装置に於いては、半導体ウェ
ハ１、各電極４，５，６，７、基板８の相互間の電気絶
縁を確保する為プラスチックシート２，３を使用してい
た為、その熱伝導率の低さに起因して半導体ウェハ１に
対する温度調整機能が悪い。又プラスチックシート２と
半導体ウェハ１の間に、半導体ウェハの素材であるシリ
コンや装置構成部材のステンレス鋼等から発生する微細
なゴミをはさみ込むと、プラスチックシート２の硬度は
それらよりはるかに低いのでゴミがプラスチックシート
２の中に埋め込まれ、各電極４，５゜６．７と半導体ウ
ェハ１の間の絶縁が破壊され、静電チャック機能がなく
なり易い。(Problems to be Solved by the Invention) In a conventional semiconductor wafer holding device, a plastic sheet 2 is used to ensure electrical insulation between the semiconductor wafer 1, each electrode 4, 5, 6, 7, and substrate 8. , 3 was used, the temperature adjustment function for the semiconductor wafer 1 was poor due to its low thermal conductivity. Furthermore, if fine dust generated from silicon, which is the material of the semiconductor wafer, or stainless steel, which is a component of the device, is sandwiched between the plastic sheet 2 and the semiconductor wafer 1, the hardness of the plastic sheet 2 is much lower than that. Dust is embedded in the plastic sheet 2, and the insulation between each electrode 4, 5.degree. 6.7 and the semiconductor wafer 1 is likely to be destroyed, causing the electrostatic chuck function to be lost.
さらに、使用中の劣化によりプラスチックシート２，３
が保護膜としての機能が果せなくなった時は静電チャッ
ク部がまだ使用可能の状態にあっても同時に新品と取替
えなければならなくなる事も問題点として挙げられる。Furthermore, due to deterioration during use, plastic sheets 2 and 3
Another problem is that when the electrostatic chuck part no longer functions as a protective film, it must be replaced with a new one even if the electrostatic chuck part is still usable.
本発明は温度調整機能にすぐれ、かつゴミのはさみ込み
によっても静電チャック機能を失う事がなく使用中には
基板保護能力のみを更新できる半導体ウェハ保持装置を
提供する事を目的とする。An object of the present invention is to provide a semiconductor wafer holding device which has an excellent temperature adjustment function, does not lose its electrostatic chuck function even if dust is caught in it, and can update only its substrate protection ability during use.
（課題を解決するための手段）
第１図に示すように、基板８の上に半導体ウェハ１のり
んかくより小さいりんかくを持つ絶縁体１１を形成し、
その内部に静電チャック機能を生じせしめる為の電極１
０を形成する。該絶縁体は熱伝導率が大きくかつ硬度も
高いものとする。さらに、半導体ウェハ１をセットした
時、上部から見て基板８が直接現われぬ様な開口形状を
持つプラスチックシート２を設ける。(Means for solving the problem) As shown in FIG. 1, an insulator 11 having links smaller than those of the semiconductor wafer 1 is formed on a substrate 8,
Electrode 1 for producing an electrostatic chuck function inside it
form 0. The insulator has high thermal conductivity and high hardness. Further, a plastic sheet 2 having an opening shape such that the substrate 8 does not directly appear when the semiconductor wafer 1 is set is provided when viewed from above.
（作用）
熱伝導率が大きく、かつ硬度も高い絶縁体１１を使用し
た為、基板８を介しての温度調整能力にすぐれ、又シリ
コンやステンレス鋼等から成るゴミをはさんだまま半導
体ウェハ１を静電吸着しても該ゴミが絶縁体内部に押込
められ絶縁破壊が生じる事もない。また、半導体ウェハ
１をセットした時、上部から見て基板８が直接現われぬ
様な開口形状を持つプラスチックシート２を使用した為
、例えばエツチング用イオン等が上部から入射される様
な使用状態に置かれた時、該プラスチックシート２が劣
化して基板８の保護膜としての機能が果たせなくなった
時は静電チ、ヤック部はそのままで該プラスチックシー
ト２のみを取替えればよい。(Function) Since the insulator 11 with high thermal conductivity and high hardness is used, it has excellent temperature control ability via the substrate 8, and the semiconductor wafer 1 can be inserted with dust made of silicon, stainless steel, etc. Even if the dust is electrostatically attracted, the dust will not be forced into the insulator and dielectric breakdown will not occur. In addition, since the plastic sheet 2 has an opening shape that prevents the substrate 8 from directly appearing when viewed from above when the semiconductor wafer 1 is set, it may be used in a situation where, for example, etching ions are incident from above. When the plastic sheet 2 deteriorates and cannot function as a protective film for the substrate 8, it is sufficient to replace only the plastic sheet 2, leaving the electrostatic chuck and yak parts as they are.
又正常使用中もエツチング用イオンにより基板８がスパ
ッタリングされてその構成分子や原子が半導体にとって
有害な汚染物質となって飛散する事も防げる。Further, even during normal use, the etching ions can prevent the substrate 8 from being sputtered and its constituent molecules and atoms scattering as contaminants harmful to the semiconductor.
（実施例） 第２図に本発明に係わる一実施例を示す。(Example) FIG. 2 shows an embodiment of the present invention.
（実施例の構成）
銅、アルミニウム等の、熱伝導の良い金属で基板８を作
る。該基板８には恒温水等を通して温度調節する為の温
度調整用空間９を形成する。(Configuration of Example) The substrate 8 is made of a metal with good thermal conductivity, such as copper or aluminum. A temperature adjustment space 9 is formed in the substrate 8 for controlling the temperature by passing constant temperature water or the like.
該基板８上に、半導体ウェハの外形りんかくより小さい
りんかくを持つ凸起状に絶縁体１１を形成する。An insulator 11 is formed on the substrate 8 in a convex shape having a diameter smaller than the outer diameter of the semiconductor wafer.
該絶縁体としては、ステンレス鋼と同等の熱伝導率を持
ちシリコンやステンレス鋼より硬度の高いアルミナが望
ましく、基板８からの熱伝達を考慮すると容射等の密着
性の良い方法で製作する事が望ましい。The insulator is preferably alumina, which has a thermal conductivity equivalent to that of stainless steel and is harder than silicon or stainless steel, and in consideration of heat transfer from the substrate 8, it should be manufactured using a method with good adhesion such as radiation radiation. is desirable.
該絶縁体１１上にメツキ、メタライズ等でプラス及びマ
イナスの電極４，５，６．７を形成し、さらにその上部
をアルミナで被って第２図に示す如き絶縁体１１を形成
する。半導体ウェハ１をセットした時、上部から見て基
板８が直接視認できぬ様な開口形状を持つプラスチック
シート２を基板８上に設ける。該プラスチックシート２
は劣化した時に取替え易くする為テフロンやポリイミド
等の粘着シートが望ましい。Positive and negative electrodes 4, 5, 6.7 are formed on the insulator 11 by plating, metallization, etc., and the upper portions thereof are covered with alumina to form the insulator 11 as shown in FIG. A plastic sheet 2 having an opening shape such that the substrate 8 is not directly visible when viewed from above when the semiconductor wafer 1 is set is provided on the substrate 8. The plastic sheet 2
An adhesive sheet made of Teflon or polyimide is desirable to make it easy to replace when it deteriorates.
（実施例の作用）
第２図に於いて、熱伝導率が大きく、かつ硬度も高いア
ルミナ等の絶縁体１１を使用するので温度調整用空間９
に恒温水等を通じて基板８を温度調整する場合、半導体
ウェハ１の温度調整及び加工時に於ける半導体ウェハ１
の冷却の能力にすぐれている。(Function of the embodiment) In FIG. 2, the temperature adjustment space 9 is
When the temperature of the substrate 8 is adjusted using constant temperature water etc., the temperature of the semiconductor wafer 1 during temperature adjustment and processing of the semiconductor wafer 1 is
It has excellent cooling ability.
シリコンやステンレス鋼から成るゴミをはさんだまま電
極４，５，６．７に通電して静電吸着しても該ゴミが絶
縁体内部に押込められて絶縁破壊が生じる事もない。半
導体ウェハ１をセットした時、上部から見て基板８が直
接視認できぬ様な開口形状を持つ粘着プラスチックシー
ト２を使用したので例えばエツチングやイオン注入等、
高エネルギーを持った活性粒子が上方から入射される場
合、基板８がスパッタリングされてその構成分子。Even if the electrodes 4, 5, 6.7 are energized and electrostatically adsorbed while dust made of silicon or stainless steel is sandwiched therein, the dust will not be forced into the insulator and dielectric breakdown will not occur. When the semiconductor wafer 1 is set, the adhesive plastic sheet 2 has an opening shape that prevents the substrate 8 from being directly visible when viewed from above.
When active particles with high energy are incident from above, the substrate 8 is sputtered and its constituent molecules are sputtered.
原子が飛散し、いわゆる金属汚染をひき起こす事が防止
できる。It is possible to prevent atoms from scattering and causing so-called metal contamination.
さらに、エツチングやイオン注入等の装置にて使用され
る時には、その活性なエネルギー粒子によって該プラス
チックシート２は化学反応によってもその構成原子がう
ばわれ薄くなって保護膜機能が低下する事はやむを得な
いので、ひんばんに取替える必要があり、この点でも粘
着シートとして貼り替える様にしておく事が望ましい。Furthermore, when used in equipment such as etching or ion implantation, it is unavoidable that the constituent atoms of the plastic sheet 2 are destroyed by chemical reactions due to the active energy particles, making it thinner and reducing its protective film function. Therefore, it is necessary to replace it frequently, and in this respect, it is desirable to replace it as an adhesive sheet.
本発明によれば温度調整機能にすぐれ、かつゴミのはさ
み込みによっても静電チャック機能を失う事がなく、使
用中には基板保護能力のみを更新できる半導体ウェハ保
持装置が提供される。According to the present invention, a semiconductor wafer holding device is provided which has an excellent temperature adjustment function, does not lose its electrostatic chuck function even if dust is caught in the device, and can update only its substrate protection ability during use.
第１図は本発明装置の断面図、第２図は本発明の一実施
例を示す断面図、第３図は従来の装置の断面図である。
１ 半導体ウェハ
２．３・・・プラスチックシート
４．６・・・プラス電極 ５，７・・・マイナス電極８
・・・基板 ９・温度調整用空間１０・・・
電極 １１・・・絶縁体代理人 弁理士 則
近 憲 佑
同 第子丸 健
−ト
第１図
第２図
第３図FIG. 1 is a cross-sectional view of an apparatus according to the present invention, FIG. 2 is a cross-sectional view showing an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional apparatus. 1 Semiconductor wafer 2.3... Plastic sheet 4.6... Positive electrode 5, 7... Negative electrode 8
・・・Substrate 9・Temperature adjustment space 10...
Electrode 11... Insulator agent Patent attorney Norihiro Ken Yudo Daishimaru Kento Figure 1 Figure 2 Figure 3
Claims (2)
度の電気絶縁体からなり保持される半導体ウェハの外形
りんかくよりも小さいりんかくをもつ凸部を形成し、こ
の凸部の中に前記半導体ウェハ保持用の電極を埋設した
ことを特徴とする半導体ウェハ保持装置。(1) On one side of a substrate made of a good thermal conductor, a convex portion made of an electrical insulator with high hardness and high thermal conductivity and having a diameter smaller than the outer diameter of the semiconductor wafer to be held is formed. A semiconductor wafer holding device, characterized in that the electrode for holding the semiconductor wafer is embedded therein.
ウェハを保持する凸部以外の表面に半導体ウェハの外形
よりも小さい開口のプラスチックシートを貼着したこと
を特徴とする半導体ウェハ保持装置。(2) A semiconductor wafer holding device characterized in that a plastic sheet with an opening smaller than the external size of the semiconductor wafer is attached to the surface other than the convex portion formed on one side of a substrate made of a good thermal conductor and holding the semiconductor wafer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63068109A JPH01241839A (en) | 1988-03-24 | 1988-03-24 | Device for holding semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63068109A JPH01241839A (en) | 1988-03-24 | 1988-03-24 | Device for holding semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01241839A true JPH01241839A (en) | 1989-09-26 |
Family
ID=13364241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63068109A Pending JPH01241839A (en) | 1988-03-24 | 1988-03-24 | Device for holding semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01241839A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280156A (en) * | 1990-12-25 | 1994-01-18 | Ngk Insulators, Ltd. | Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means |
| US5522131A (en) * | 1993-07-20 | 1996-06-04 | Applied Materials, Inc. | Electrostatic chuck having a grooved surface |
| JPH0982785A (en) * | 1995-09-18 | 1997-03-28 | Nec Corp | Semiconductor wafer temperature controller |
| JPH10163303A (en) * | 1996-11-22 | 1998-06-19 | Samsung Electron Co Ltd | Wafer stage for semiconductor device manufacturing apparatus |
| US6217655B1 (en) | 1997-01-31 | 2001-04-17 | Applied Materials, Inc. | Stand-off pad for supporting a wafer on a substrate support chuck |
| WO2010024146A1 (en) * | 2008-08-27 | 2010-03-04 | 株式会社アルバック | Electrostatic chuck and vacuum processing apparatus |
-
1988
- 1988-03-24 JP JP63068109A patent/JPH01241839A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280156A (en) * | 1990-12-25 | 1994-01-18 | Ngk Insulators, Ltd. | Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means |
| US5522131A (en) * | 1993-07-20 | 1996-06-04 | Applied Materials, Inc. | Electrostatic chuck having a grooved surface |
| JPH0982785A (en) * | 1995-09-18 | 1997-03-28 | Nec Corp | Semiconductor wafer temperature controller |
| JPH10163303A (en) * | 1996-11-22 | 1998-06-19 | Samsung Electron Co Ltd | Wafer stage for semiconductor device manufacturing apparatus |
| US6217655B1 (en) | 1997-01-31 | 2001-04-17 | Applied Materials, Inc. | Stand-off pad for supporting a wafer on a substrate support chuck |
| WO2010024146A1 (en) * | 2008-08-27 | 2010-03-04 | 株式会社アルバック | Electrostatic chuck and vacuum processing apparatus |
| US8724288B2 (en) | 2008-08-27 | 2014-05-13 | Ulvac, Inc. | Electrostatic chuck and vacuum processing apparatus |
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