JPH01236678A - Planar semiconductor laser - Google Patents
Planar semiconductor laserInfo
- Publication number
- JPH01236678A JPH01236678A JP6454888A JP6454888A JPH01236678A JP H01236678 A JPH01236678 A JP H01236678A JP 6454888 A JP6454888 A JP 6454888A JP 6454888 A JP6454888 A JP 6454888A JP H01236678 A JPH01236678 A JP H01236678A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- active layer
- type semiconductor
- characteristic
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005253 cladding Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は面型半導体レーザに関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a surface semiconductor laser.
（従来の技術）
基板に対して垂直に光を取り出すことのできる固型半導
体レーザは２次元アレイ化が容易であり、将来の光コン
ピュータにおける並列光処理方式のキーデバイスとして
期待されている。面型半導体レーザのｇ Ｂとしては、
いくつかの種類が提案されているが、その−例であるＣ
ＴＪレーザ（エレクトロニクス・レターズ、 （Ｅｌｅ
ｃｔｒｏｎ、１ｅｔｔ、、２０（１４）、Ｐ５７７−５
７８．１９８４））を第３図に示す。このような面型半
導体レーザの作製工程は、次のようなものである。まず
、すべてｎ型であるＧａＡｓ−ＧａＡｇＡｓ−ＧａＡｓ
ｆｍ成されるヘテ０＋Ｍ造ウェハーを用意する。それか
らＡｇＧａＡｓ層の直上までＧａＡｓ層を反応性イオン
エツチング（ＲＩＥ）を用いて円柱状にエツチングする
。(Prior Art) Solid-state semiconductor lasers that can extract light perpendicularly to a substrate can be easily formed into a two-dimensional array, and are expected to be a key device for parallel optical processing systems in future optical computers. As g B of a surface semiconductor laser,
Several types have been proposed, an example of which is C.
TJ Laser (Electronics Letters, (Ele
ctron, 1ett, 20(14), P577-5
78.1984)) is shown in Figure 3. The manufacturing process of such a planar semiconductor laser is as follows. First, GaAs-GaAgAs-GaAs, which are all n-type
A 0+M fabricated wafer is prepared. The GaAs layer is then etched into a cylindrical shape using reactive ion etching (RIE) up to just above the AgGaAs layer.
次に選択Ｚ ｎ拡散によって円柱表面及び、基板面にｎ
層を形成し、電極を蒸着する。敢後に基板裏面からＡｇ
Ｇ ａ Ａ ｓ 層面下までザブストレートを除去し、
電極を蒸着する。しかし、このような面型半導体レーザ
においては、まだ、室温ＣＷ発振が得られていない。Next, by diffusion of selected Zn, n is applied to the cylinder surface and the substrate surface.
Form layers and deposit electrodes. Afterwards, remove Ag from the back side of the board.
Remove the substrate to below the surface of the G a As layer,
Deposit the electrodes. However, room temperature CW oscillation has not yet been achieved in such a planar semiconductor laser.
（発明が解決しようとする課題）
しかしながら従来例のような固型半導体レーザにおいて
は、面方向以外にも活性領域を持つから、有効な面出力
を得ることができなかった０本発明の目的は、特性が優
れ、従来のものより製造歩留まり及び特性再現性の向上
した固型半導体レーザを提供することにある。(Problems to be Solved by the Invention) However, in solid-state semiconductor lasers such as those of the conventional example, since the active region exists in other directions than in the planar direction, it was not possible to obtain an effective planar output power. Another object of the present invention is to provide a solid-state semiconductor laser having excellent characteristics and improved manufacturing yield and characteristic reproducibility compared to conventional ones.
（課題を解決するための手段）
半導体基板面に対して垂直方向に光を出射する面を半導
体レーザにおいて、前記基板面に平行な２つの光出射面
に端部が露出している柱状の第１導電型活性層と、この
第１導電型活性層よりエネルギーギャップが大きく、低
屈折率の第２導電型クラッド層とを備え、前記第１導電
型活性層の柱状側面は前記第２導電型クラツド１醍によ
って埋め込まれていることを特徴とする固型半導体レー
ザによって、本発明は上記の課題を解決することができ
る。(Means for Solving the Problems) A semiconductor laser has a surface that emits light in a direction perpendicular to the semiconductor substrate surface, and a columnar crystal whose end portions are exposed to two light emitting surfaces parallel to the substrate surface. a second conductivity type active layer, and a second conductivity type cladding layer having a larger energy gap and a lower refractive index than the first conductivity type active layer; The present invention can solve the above problems by means of a solid-state semiconductor laser characterized in that it is embedded in a cladding.
（実施例）
以下、実施例の図面を参照して本発明をより詳細に説明
する。第１図は本発明の一実施例である固型半導体レー
ザの構造を示す断面図であり一第２図はその製作工程の
概略を示している。実際の製作には、まず第２図（ａ）
に示すように（１００）ＩｎＰ基板１上にｐ−ＩｎＧａ
ＡｓＰ活性層２を厚さ５〇四成長し、これをクロライド
系のＲＩＥ法により、基板にほぼ垂直な円柱形状となる
ようにエツチングする。得られた円柱の直径は３０ＩＩ
ｍであり、高さは４０ＩＪＩ１１であった。次に、第２
図（ｂ）に示すように円柱形状が埋め込まれるまで、ｎ
−ＩｎＰクラッド層３を成長させる。さらに、高反射電
極を形成するために、第２図（ｃ）に示すように、円柱
上に直径１０μ町のＳ ｉ Ｏ２フイルム４をスパッタ
で生成し、その上から、直径２５μｍの範囲に電極５と
して、Ａ ｕ ／ Ｚ ｎ ／ Ａ ｕを選択的に蒸着
、アロイする０次に、第２図（ｄ）に示すように、ｐ−
１ｎＧａＡｓＰ活性層２の円柱断面６が得られるまで、
ラッピングにより、ＩｎＰ基板１及びｐ−１ｎＧａＡｓ
Ｐ活性層２を除去する。(Examples) Hereinafter, the present invention will be described in more detail with reference to drawings of examples. FIG. 1 is a sectional view showing the structure of a solid-state semiconductor laser which is an embodiment of the present invention, and FIG. 2 shows an outline of the manufacturing process thereof. For actual production, first see Figure 2 (a).
As shown in (100) InP substrate 1, p-InGa
An AsP active layer 2 is grown to a thickness of 50 cm, and is etched by chloride-based RIE into a cylindrical shape substantially perpendicular to the substrate. The diameter of the cylinder obtained is 30 II
m, and the height was 40IJI11. Next, the second
n until the cylindrical shape is embedded as shown in Figure (b).
- Grow the InP cladding layer 3. Furthermore, in order to form a highly reflective electrode, as shown in FIG. 2(c), a SiO2 film 4 with a diameter of 10 μm is formed on a cylinder by sputtering, and an electrode is placed on top of it in an area of 25 μm in diameter. As shown in FIG. 2(d), as shown in FIG. 2(d), p-
Until a cylindrical cross section 6 of the 1nGaAsP active layer 2 is obtained,
By lapping, InP substrate 1 and p-1nGaAs
P active layer 2 is removed.
ｆｉｆ、＆に、ラッピングによって得られたｐ−ＩｎＧ
ａＡｓＰ円柱断面６を除いたｎ−１ｎＰクラブト１ｍ
３上部に電極７としてＣｒ ／ Ａ ｕを蒸着アロイす
ることによって、所望の固型半導体レーザ構造（第１図
）を得た。fif, & p-InG obtained by wrapping
n-1nP crab 1m excluding aAsP cylinder cross section 6
A desired solid-state semiconductor laser structure (FIG. 1) was obtained by vapor-depositing Cr/Au as an electrode 7 on top of the semiconductor laser 3.
このようにして作製した固型半導体レーザにより、室温
しきい値電流１０１０−２Ｏ，最大出力５０ｍＷ程度の
ものが再現性よく得られた。また、この構成では、２次
元アレイ化も困難ではなく、５ｘ５−２５個の固型レー
ザアレイを試作し、良好な特性を得た。製造の再現性も
従来例と比べて大幅に向上した。もちろん本発明で用い
る半導体材ｆ′１は、Ｉｎ’Ｐ系に限るものではない。The solid-state semiconductor laser produced in this way had a room temperature threshold current of 1010-2O and a maximum output of about 50 mW with good reproducibility. Furthermore, with this configuration, it is not difficult to create a two-dimensional array, and a 5x5-25 solid-state laser array was prototyped and good characteristics were obtained. The reproducibility of manufacturing has also been significantly improved compared to conventional methods. Of course, the semiconductor material f'1 used in the present invention is not limited to In'P type.
また、本実施例では、柱状活性層の断面を円形としたが
、他の形状、たとえば、正方形などでも本発明が実施で
きることはもちろんである。Further, in this embodiment, the cross section of the columnar active layer is circular, but it goes without saying that the present invention can be practiced with other shapes, such as square.
（発明の効果）
本発明の特徴は、第１導電型半導体よりなる柱体の側面
をよりエネルギーギャップが大きく低屈折率の第２導電
型半導体によって囲んだ埋め込み構造としたことである
。これによって、発光効率が増大し、特性のよい固型半
導体レーザの製造歩留まり、特性の再現性が大幅に向上
した。(Effects of the Invention) A feature of the present invention is that a side surface of a columnar body made of a first conductivity type semiconductor is surrounded by a second conductivity type semiconductor having a larger energy gap and a lower refractive index to form a buried structure. As a result, the luminous efficiency has increased, and the manufacturing yield and reproducibility of the characteristics of solid-state semiconductor lasers with good characteristics have been significantly improved.
第１図は本発明の一実施例の構造を示す斜視断面図、第
２図はその製造工程を示す斜視断面図、第３図は従来例
の斜視断面図である。
１−−−１ ｎ Ｐ基板、２−ｐ−１ｎＧａＡｓＰ活性
層、３−＝ｎ−ＩｎＰクラッド層、４−３ｉＯｔ膜、６
−−−ｐ−１ｎＧａＡｓ Ｐ断面、５ 、７ ”” 電
１．８ ・−ｎ −Ｇ ａ Ａ ｓ基板、９−ｎ −Ａ
ｕＧａＡｓ、１０・−ｐ−ＡｕＧａＡｓ、１１・−ｐ＋
−ＡＪＧａＡｓ、１２−・・ｐ＋−ＧａＡｓ、１３−ｐ
−Ｇ ａ Ａ ｓ、１４ ・・・ｎ−ＧａＡｓ 、１
５．１６−電極。FIG. 1 is a perspective sectional view showing the structure of an embodiment of the present invention, FIG. 2 is a perspective sectional view showing the manufacturing process thereof, and FIG. 3 is a perspective sectional view of a conventional example. 1--1 nP substrate, 2-p-1nGaAsP active layer, 3-=n-InP cladding layer, 4-3iOt film, 6
---p-1nGaAs P cross section, 5, 7'' electric 1.8 ・-n -GaAs substrate, 9-n -A
uGaAs, 10・-p-AuGaAs, 11・-p+
-AJGaAs, 12-...p+-GaAs, 13-p
-GaAs, 14...n-GaAs, 1
5.16-Electrodes.
Claims (1)
体レーザにおいて、前記基板面に平行な２つの光出射面
に端部が露出している柱状の第１導電型活性層と、この
第１導電型活性層よりエネルギーギャップが大きく、低
屈折率の第２導電型クラッド層とを備え、前記第１導電
型活性層の柱状側面は前記第２導電型クラッド層によっ
て埋め込まれていることを特徴とする面型半導体レーザ
。In a surface semiconductor laser that emits light in a direction perpendicular to a semiconductor substrate surface, a columnar first conductivity type active layer whose ends are exposed on two light emitting surfaces parallel to the substrate surface; and a second conductivity type cladding layer having a larger energy gap and lower refractive index than the first conductivity type active layer, and the columnar side surface of the first conductivity type active layer is embedded in the second conductivity type cladding layer. Features of surface type semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6454888A JPH01236678A (en) | 1988-03-16 | 1988-03-16 | Planar semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6454888A JPH01236678A (en) | 1988-03-16 | 1988-03-16 | Planar semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01236678A true JPH01236678A (en) | 1989-09-21 |
Family
ID=13261385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6454888A Pending JPH01236678A (en) | 1988-03-16 | 1988-03-16 | Planar semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01236678A (en) |
-
1988
- 1988-03-16 JP JP6454888A patent/JPH01236678A/en active Pending
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