JPH01225118A - X-ray exposure device - Google Patents
X-ray exposure deviceInfo
- Publication number
- JPH01225118A JPH01225118A JP63049849A JP4984988A JPH01225118A JP H01225118 A JPH01225118 A JP H01225118A JP 63049849 A JP63049849 A JP 63049849A JP 4984988 A JP4984988 A JP 4984988A JP H01225118 A JPH01225118 A JP H01225118A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- windows
- storage chamber
- window
- blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 claims description 48
- 238000003860 storage Methods 0.000 claims description 43
- 230000005855 radiation Effects 0.000 claims description 2
- 230000006837 decompression Effects 0.000 claims 1
- 238000000638 solvent extraction Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 8
- 230000005469 synchrotron radiation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体集積回路の微細パターンを軟Ｘ線を用
いてウニへ上に転写形成するＸ線露光装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray exposure apparatus that transfers and forms a fine pattern of a semiconductor integrated circuit onto a sea urchin using soft X-rays.
［発明の背景］
Ｘ線露光装置用Ｘ線源としては、電子線励起によりＸ線
を発生させる管球方式、プラズマから発生するＸ線を利
用するもの、シンクロトロン軌道放射光を利用するもの
などがある。これらのＸ線源はいずれの場合も真空中で
Ｘ線を発生するものである。真空度は管球方式で１０−
６〜１Ｏ−７Ｔｏｒｒ、プラズマ方式では１０ ””Ｔ
ｏｒｒ以下、シンクロトロン軌道放射光では１０′−９
〜１０′−１０ＴＯｒｒといった超高真空が要求される
。したがって、Ｘ線源は真空雰囲気室内におかれ、発生
したＸ線をマスク、ウェハ等に照射させる場合、Ｘ線の
透過率の高い材質から成る遮断窓を通して照射している
。そして、また、管球方式やプラズマ方式の線源は０．
１〜数ｆｆ１ＩＩ＋といった大きさであり、また発散光
であることがら半影ぼけを小さくし、露光面積を大きく
するために、Ｘ線源からマスク、ウェハまでの距離を２
００〜５００）と大きくとる必要がある。さらに、シン
クロトロン軌道放射光の場合ではＸ線源とマスク、ウェ
ハの距離は数ｍ以上に及ぶ。この場合、遮断窓からウェ
ハへ至るＸ線透過経路に大気が存在すると、Ｘ線が大気
に吸収され、そのため露光時間が増大し、スループット
の低下を招く。Ｘ線露光装置を産業用装置としてみた場
合、スルーブツトの低下は装置にとって致命的な欠点と
なる。これを解決するため、マスク、ウェハおよび両者
の位置合せ機構は、真空気密な試料収納容器内におかれ
、前記容器内の大気を置換してＸ線の吸収の小さいガス
体（通常ヘリウム（Ｈｅ））を大気圧以下に減圧して満
たす方式が提案されている。また、遮断窓の材料として
Ｘ線に対して透過率の高いベリリウム（Ｂｅ）を用いた
としても、実用的な透過能を得るためには、２０μｍ程
度の薄膜にしなければならない。[Background of the Invention] X-ray sources for X-ray exposure devices include tube systems that generate X-rays through electron beam excitation, systems that utilize X-rays generated from plasma, systems that utilize synchrotron orbital synchrotron radiation, etc. There is. In each case, these X-ray sources generate X-rays in a vacuum. The degree of vacuum is 10- by tube method.
6 to 1O-7Torr, 10""T for plasma method
orr or less, 10'-9 for synchrotron orbital synchrotron radiation
An ultra-high vacuum of ~10'-10 TOrr is required. Therefore, the X-ray source is placed in a vacuum atmosphere chamber, and when the generated X-rays are to be irradiated onto a mask, wafer, etc., they are irradiated through a blocking window made of a material with high X-ray transmittance. Also, tube type and plasma type radiation sources are 0.
1 to several ff1II+, and since the light is diverging, the distance from the X-ray source to the mask and wafer is set to 2 to reduce penumbra blur and increase the exposure area.
00 to 500). Furthermore, in the case of synchrotron orbital synchrotron radiation, the distance between the X-ray source, mask, and wafer is several meters or more. In this case, if the atmosphere exists in the X-ray transmission path from the blocking window to the wafer, the X-rays will be absorbed by the atmosphere, thereby increasing the exposure time and reducing throughput. When an X-ray exposure device is viewed as an industrial device, a reduction in throughput is a fatal drawback for the device. To solve this problem, the mask, wafer, and alignment mechanism for both are placed in a vacuum-tight sample storage container, and the atmosphere inside the container is replaced with a gas (usually helium) that has low X-ray absorption. )) has been proposed to be filled by reducing the pressure to below atmospheric pressure. Further, even if beryllium (Be), which has high transmittance to X-rays, is used as the material for the blocking window, the film must be made as thin as about 20 μm in order to obtain practical transmittance.
従って耐圧の問題が生ずる。管球方式やプラズマ方式で
は発散光であるため、遮断窓をＸ線源に近づければ、そ
れだけ小口径の窓にすることが可能となる。Therefore, the problem of withstand voltage arises. In the tube method and plasma method, since the light is divergent, the closer the blocking window is to the X-ray source, the smaller the diameter of the window can be made.
しかしながら、窓を小さくすれば露光面積が減少する。However, making the window smaller reduces the exposed area.
Ｘ線の吸収を効率良く防止し、装置を大型化、複雑化す
ることなくＸ線による露光転写可能なＸ線露光装置が望
まれている。There is a demand for an X-ray exposure device that can efficiently prevent absorption of X-rays and can perform exposure transfer using X-rays without increasing the size or complexity of the device.
［従来の技術］
従来のＸ線露光装置の構造は例えば特開昭５４−２４２
６７号公報に開示されている。この従来構造を第６図に
示す。[Prior art] The structure of a conventional X-ray exposure apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. 54-242.
It is disclosed in Publication No. 67. This conventional structure is shown in FIG.
電子銃１およびターゲット２からなるＸ線源はＸ線源収
納室３内に密封収納される。Ｘ線源収納室３はバルブ１
４を介して高真空ポンプ１９に連結され、内部は１０
”’Ｔｏｒｒ程度の高真空に保たれる。Ｘ線源収納室３
にはＸ線取出し用の遮断窓３７が設けられている。Ｘ線
の被照射体であるウェハ１１およびマスク１２はウェハ
搭載ステージ９とともにステージ収納室８内に収納され
ている。１０はウェハチャック、１３はマスクチャック
である。ステージ収納室８は鏡筒６を介してＸ線源収納
室３に連結される。ステージ収納室８はバルブ１６を介
して低真空ポンプ２０に連結され、またバルブ１８を介
してヘリウム（Ｈｅ）源に連結されている。An X-ray source consisting of an electron gun 1 and a target 2 is hermetically housed in an X-ray source storage chamber 3. X-ray source storage chamber 3 has valve 1
It is connected to the high vacuum pump 19 via 4, and the internal 10
It is maintained at a high vacuum of about Torr. X-ray source storage chamber 3
A blocking window 37 for taking out X-rays is provided. A wafer 11 and a mask 12, which are objects to be irradiated with X-rays, are housed in a stage storage chamber 8 together with a wafer mounting stage 9. 10 is a wafer chuck, and 13 is a mask chuck. The stage storage chamber 8 is connected to the X-ray source storage chamber 3 via the lens barrel 6. The stage storage chamber 8 is connected via a valve 16 to a low vacuum pump 20 and via a valve 18 to a helium (He) source.
上記構成において、低真空ポンプ２０によりステージ収
納室８内を１０１〜Ｉ Ｑ−’Ｔｏｒｒ程度まで減圧し
た後、バルブ１８を開いてＨｅを導入してステージ収納
室８内に大気圧より低い状態でＨｅを充填する。電子銃
１から出射した電子ビームはターゲット２を衝撃してＸ
線を発生する。このＸ線は遮断窓３７および鏡筒６を通
してマスク１２およびウェハ１１を照射する。In the above configuration, after the pressure in the stage storage chamber 8 is reduced to approximately 101 to IQ-'Torr using the low vacuum pump 20, the valve 18 is opened to introduce He into the stage storage chamber 8 at a pressure lower than atmospheric pressure. Fill with He. The electron beam emitted from the electron gun 1 impacts the target 2 and
Generate a line. This X-ray irradiates the mask 12 and the wafer 11 through the blocking window 37 and the lens barrel 6.
［発明が解決しようとする問題点］
前記従来のＸ線露光装置においては、遮断窓３７からウ
ェハ１１までのＸ線透過経路においてＨｅによるＸ線の
吸収が避けられない。したがって、ＨｅによるＸ線の減
衰だけを考えれば、遮断窓３フはマスク１２にできるだ
け近い方が良い。[Problems to be Solved by the Invention] In the conventional X-ray exposure apparatus, absorption of X-rays by He in the X-ray transmission path from the blocking window 37 to the wafer 11 is unavoidable. Therefore, considering only the attenuation of X-rays due to He, it is better for the blocking window 3 to be as close to the mask 12 as possible.
しかし、たとえ、Ｈｅを減圧して充填しても、ウェハ交
換や、ステージのメンテナンスの際などには遮断窓３７
は大気圧Ｉ Ｋｇ／ ｃｍ’に耐える必要がある。遮断
窓３７をマスク１２に近付けると、露光面積と同程度の
広さの窓になる。したがって、露光方式をステップ・ア
ンド・リピート方式としても、実用点な露光面積（例え
ば０３０ｍｍ程度）と同じ広さで、大気圧に耐えるのは
非常に困難である。露光面積を小さくして遮断窓３７の
耐圧を充分としても、上記従来例では鏡筒６をＸ線源収
納室３と同じ真空度まで排気しなければならず、排気時
間が長くなる。あるいは排気系が大規模になる等の問題
が生じていた。However, even if He is filled with reduced pressure, the blocking window 37 must be closed during wafer exchange or stage maintenance.
must withstand atmospheric pressure I Kg/cm'. When the blocking window 37 is brought closer to the mask 12, the window becomes as wide as the exposed area. Therefore, even if the exposure method is a step-and-repeat method, it is very difficult to withstand atmospheric pressure with the same area as the practical exposure area (for example, about 0.3 mm). Even if the exposure area is made small and the pressure resistance of the blocking window 37 is sufficient, in the conventional example described above, the lens barrel 6 must be evacuated to the same degree of vacuum as the X-ray source storage chamber 3, which increases the evacuation time. Alternatively, problems such as the exhaust system becoming large-scale have arisen.
［発明の目的］
本発明は上記従来技術の欠点に鑑みなされたものであっ
て、真空排気系を大型化することなくＸ線の減衰を充分
抑えかつ遮断窓の破損のおそれを減少させたＸ線露光装
置の提供を目的とする。[Object of the Invention] The present invention has been made in view of the above-mentioned drawbacks of the prior art. The purpose is to provide line exposure equipment.
［実施例］
第１図は本発明の実施例で管球方式のＸ線露光装置を示
す。第１図において、Ｘ線源である電子銃１とターゲッ
ト２はＸ線源収納室３に収納されている。Ｘ線源収納室
３には第１の遮断窓４が設けられ、これを通して発生し
たＸ線を取出す。Ｘ線源収納室３には鏡筒６が接続され
、さらにステージ収納室８が接続されている。[Embodiment] FIG. 1 shows a tube type X-ray exposure apparatus according to an embodiment of the present invention. In FIG. 1, an electron gun 1 and a target 2, which are X-ray sources, are housed in an X-ray source storage chamber 3. The X-ray source storage chamber 3 is provided with a first blocking window 4 through which the generated X-rays are taken out. A lens barrel 6 is connected to the X-ray source storage chamber 3, and a stage storage chamber 8 is further connected thereto.
ステージ収納室８にはマスク１２、マスクチャック１３
、ウェハ１１、ウェハチャック１０、ウェハステージ９
が収納されている。ステージ収納室８の上部のＸ線取入
部には、第２の遮断窓７が設置されている。鏡筒６には
仕切弁５が設けられている。この仕切弁は、真空用ゲー
トバルブ等が考えられ、空気圧シリンダー等で駆動され
る。Ｘ線源収納室３と鏡筒６は、バイパス管２１を通し
て相互に連通され、このバイパス管２１にはターボ分子
ポンプあるいは拡散ポンプ等の高真空ポンプ１９が接続
される。ステージ収納室８と鏡筒６は、バイパス管２２
を通して、相互に連通され、このバイパス管２２には油
回転ポンプ等の低真空ポンプ２０が接続される。The stage storage chamber 8 has a mask 12 and a mask chuck 13.
, wafer 11, wafer chuck 10, wafer stage 9
is stored. A second blocking window 7 is installed in the X-ray intake section in the upper part of the stage storage chamber 8. A gate valve 5 is provided in the lens barrel 6. This gate valve may be a vacuum gate valve or the like, and is driven by a pneumatic cylinder or the like. The X-ray source storage chamber 3 and the lens barrel 6 are communicated with each other through a bypass pipe 21, and a high vacuum pump 19 such as a turbo molecular pump or a diffusion pump is connected to the bypass pipe 21. The stage storage chamber 8 and the lens barrel 6 are connected to a bypass pipe 22.
The bypass pipe 22 is connected to a low vacuum pump 20 such as an oil rotary pump.
各バイパス管２１．２２には遮断弁１５．１７が設けら
れ、また、各配管には、装置を大気開放するためのリー
ク弁２３，２４が設けられている。ステージ収納室８に
はＨｅ導入用バルブ１８が設けられている。Each bypass pipe 21, 22 is provided with a shutoff valve 15, 17, and each pipe is provided with a leak valve 23, 24 for opening the device to the atmosphere. The stage storage chamber 8 is provided with a He introduction valve 18 .
上記構成のＸ線露光装置の操作順序を第４図に示す制御
シーケンス図と第２図（１）〜（４）を参照して以下に
説明する０図において、白抜き表示のバルブ記号（例え
ば第２図（１）のバルブ１５）はバルブ閉状態を示し、
黒塗り表示のバルブ記号（例えば第２図（１）のバルブ
１４）はバルブ閉状態を示す。The operation order of the X-ray exposure apparatus having the above configuration is explained below with reference to the control sequence diagram shown in FIG. 4 and FIGS. 2 (1) to (4). In FIG. The valve 15) in FIG. 2 (1) shows the valve closed state,
A black valve symbol (for example, valve 14 in FIG. 2(1)) indicates a closed valve state.
まず、第２図（１）に示すように、リーク弁２３．２４
を閉じ装置全体を大気から遮断する。First, as shown in FIG. 2 (1), the leak valves 23 and 24
Close the entire device to isolate it from the atmosphere.
また、遮断弁１５を開いて第１の遮断窓４の両側のＸ線
源収納室３と鏡筒６とをバイパス管２１を介して連通さ
せ、同様に遮断弁１７を開いて第２の遮断弁７の両側の
ステージ収納室８と鏡筒６とをバイパス管２２を介して
連通させる。また、仕切弁５を閉じて鏡筒６を上下に仕
切る。Also, the shutoff valve 15 is opened to communicate the X-ray source storage chamber 3 on both sides of the first shutoff window 4 with the lens barrel 6 via the bypass pipe 21, and the shutoff valve 17 is similarly opened to establish the second shutoff. The stage storage chamber 8 on both sides of the valve 7 and the lens barrel 6 are communicated via a bypass pipe 22. Furthermore, the gate valve 5 is closed to partition the lens barrel 6 into upper and lower parts.
次に第２図（２） に示すように、バルブ１４゜１６を
開き高真空ポンプ１９および低真空ポンプ２０を駆動し
て排気動作を行なう。このとぎ、高真空ポンプ１９を動
作させる場合、大気圧から１０−’Ｔｏｒｒ程度までは
油回転ポンプ等の補助ポンプ（図示しない）により粗排
気を行なう、この排気動作において、仕切弁５が閉じら
れ、第１、第２の遮断窓４．７の両側は各々バイパス管
２１゜２２で連通しているため、遮断窓４．７の各々に
対して差圧は作用しない。Next, as shown in FIG. 2(2), the valves 14 and 16 are opened and the high vacuum pump 19 and low vacuum pump 20 are driven to perform an evacuation operation. After this, when operating the high vacuum pump 19, rough evacuation is performed by an auxiliary pump (not shown) such as an oil rotary pump from atmospheric pressure to about 10-'Torr.During this evacuation operation, the gate valve 5 is closed. Since both sides of the first and second blocking windows 4.7 are connected through bypass pipes 21 and 22, no differential pressure acts on each of the blocking windows 4.7.
Ｘ線源収納室３、鏡筒６、およびステージ収納室８の圧
力が１０−’Ｔｏｒｒ以下になると、第２図（３）に示
すように、バイパス管２１上の遮断弁１５を閉じ、鏡筒
６の仕切弁５を開く。この状態でＸ線源収納室３を高真
空ポンプ１９により１０ ””Ｔｏｒｒの高真空まで排
気する。このとき、遮断弁１５が閉じているため、鏡筒
６の長さ、容積にかかわらず高真空ポンプ１９はＸ線源
収納室３のみを排気すればよい、一方、鏡筒６とステー
ジ収納室８は低真空ポンプ２０により１０−’Ｔｏｒｒ
まで排気される。When the pressure in the X-ray source storage chamber 3, lens barrel 6, and stage storage chamber 8 becomes 10-'Torr or less, the shutoff valve 15 on the bypass pipe 21 is closed and the mirror is closed, as shown in FIG. 2(3). Open the gate valve 5 of the tube 6. In this state, the X-ray source storage chamber 3 is evacuated to a high vacuum of 10'' Torr by the high vacuum pump 19. At this time, since the shutoff valve 15 is closed, the high vacuum pump 19 only needs to evacuate the X-ray source storage chamber 3 regardless of the length and volume of the lens barrel 6. 8 is 10-' Torr by the low vacuum pump 20.
until it is exhausted.
次に第２図（４） に示すように、遮断弁１７を閉じ、
Ｈｅ導入用バルブ１８を開いてＨｅをステージ収納室８
に導入する。１（ｅが所定の圧力（例えば１００ Ｔｏ
ｒｒ）に達するとＨｅ導入用バルブ１８が閉じられる。Next, as shown in Fig. 2 (4), close the shutoff valve 17,
Open the He introduction valve 18 and transfer He to the stage storage chamber 8.
to be introduced. 1 (e is a predetermined pressure (e.g. 100 To
rr), the He introduction valve 18 is closed.
以上で、露光可能な状態となる。この状態ではＸ線源収
納室３は高真空ポンプ１９で１０−’Ｔｏｒｒに排気さ
れ、鏡筒６は、低真空ポンプ２ｏで１０−’Ｔｏｒｒに
排気されている。そして、ステージ収納室８は例えば１
００ Ｔｏｒｒといった減圧されたＨｅ雰囲気となって
いる。上述したように第１の遮断窓４は立上げから露光
まで、窓の両側に差圧はほとんどかからず、単に低真空
側から高真空側への拡散を防止しているにすぎない。つ
まり、本発明は各遮断窓の両側の室を同じ具合に減圧し
、。With the above steps, the state becomes ready for exposure. In this state, the X-ray source storage chamber 3 is evacuated to 10-' Torr by the high vacuum pump 19, and the lens barrel 6 is evacuated to 10-' Torr by the low vacuum pump 2o. The stage storage chamber 8 is, for example, 1
The atmosphere is a He atmosphere with a reduced pressure of 0.00 Torr. As described above, the first blocking window 4 has almost no differential pressure applied to both sides of the window from startup to exposure, and merely prevents diffusion from the low vacuum side to the high vacuum side. That is, the present invention depressurizes the chambers on both sides of each blocking window in the same manner.
両側の室の圧力差による遮断窓への影響を防いでいる。This prevents the pressure difference between the chambers on both sides from affecting the blocking window.
したがって、窓の厚さは、取付は時、交換時の取扱いを
考えて、さらに製作時や使用中の汚染等によりピンホー
ルを生じない範囲で可能な限り薄い膜としてよく、材質
も、有機材料や無機材料等広い範囲から選択できる。そ
のため、第１の遮断窓４によるＸ線の吸収はほとんど無
視できる。また第２の遮断窓７は、窓の両側にかかる差
圧が最大になるのは、露光時のＨｅの圧力と、鏡筒の圧
力１０−３Ｔｏｒｒの差によるものである。したがって
、材質をＢｅとすれば例えばＨｅの圧力１００ Ｔｏｒ
ｒの時２０ｕｍ程度の厚さで０３０ｍｍ程度の露光面積
は充分可能で、露光方式をステップ・アンド・リピート
方式として考えれば実用的な装置になり得る。Ｘ線透過
経路におけるガス体の吸収を考えると、Ｘ線源から第２
の遮断窓７までは１０−３Ｔｏｒｒ以下の真空であり、
また、第２の遮断７からウェハ１１までは非常に短い距
離でかつ減圧したＨｅの雰囲気なので、ガス体による吸
収は非常に小さい。Therefore, the thickness of the window should be as thin as possible without creating pinholes due to contamination during manufacture or use, taking into account handling during installation and replacement, and the material should also be made of organic materials. You can choose from a wide range of materials such as carbon fibers and inorganic materials. Therefore, absorption of X-rays by the first blocking window 4 can be almost ignored. Further, in the second blocking window 7, the differential pressure applied to both sides of the window becomes maximum due to the difference between the pressure of He during exposure and the pressure of the lens barrel of 10-3 Torr. Therefore, if the material is Be, for example, the pressure of He is 100 Torr.
When the thickness is about 20 um, an exposure area of about 0.30 mm can be achieved, and if the exposure method is considered as a step-and-repeat method, it can become a practical device. Considering the absorption of gas in the X-ray transmission path, the second
The vacuum up to the blocking window 7 is 10-3 Torr or less,
Furthermore, since the distance from the second shield 7 to the wafer 11 is very short and the atmosphere is He in a reduced pressure, absorption by the gas is very small.
次に、第３図を参照して、露光終了後ウェハを取出す場
合等、ステージ収納室８を大気に解放する場合の操作順
序を以下に説明する。Next, with reference to FIG. 3, the sequence of operations when opening the stage storage chamber 8 to the atmosphere, such as when removing a wafer after exposure, will be described.
まず、第３図（１）に示すように、仕切弁５を閉じる。First, as shown in FIG. 3(1), the gate valve 5 is closed.
次に第３図（２） に示すように、遮断弁１７を開いて
第２の遮断窓７の両側をバイパス管２２を介して連通さ
せた後、低真空ポンプ２０を停止させ、リーク弁２４を
開く。そうすることにより、ステージ収納室８は、大気
に開放され、その後マスクおよびウェハを交換する。こ
の時、第２遮断窓の両側は、同時に大気に開放されるた
め窓自身は差圧の影響を受けない。Next, as shown in FIG. 3(2), after opening the cutoff valve 17 to connect both sides of the second cutoff window 7 via the bypass pipe 22, the low vacuum pump 20 is stopped, and the leak valve 24 is opened. open. By doing so, the stage storage chamber 8 is opened to the atmosphere, and then the mask and wafer are replaced. At this time, since both sides of the second blocking window are simultaneously exposed to the atmosphere, the window itself is not affected by the differential pressure.
Ｘ線源収納室３を大気開放する場合は、仕切弁５を閉じ
た後遮断弁１５を開き、その後リーク弁２３を開く。When the X-ray source storage chamber 3 is opened to the atmosphere, the gate valve 5 is closed, the cutoff valve 15 is opened, and then the leak valve 23 is opened.
上記操作順序によれば、第２の遮断窓７には１００ Ｔ
ｏｒｒ以上の差圧がかからず、また第１の遮断窓４には
ほとんど差圧がかからない状態で、大気開放することが
できる。According to the above operation order, the second blocking window 7 has a load of 100 T.
The first blocking window 4 can be opened to the atmosphere without being subjected to a differential pressure greater than orr, and with almost no differential pressure being applied to the first blocking window 4.
上記実施例においては、ステージ収納室のＨｅの圧力は
１００ Ｔｏｒｒとしたが、この圧力は１００Ｔｏｒｒ
に限定されるものではなく、窓の強度、露光面積、Ｘ線
の減衰等を考えて決定すればよい、遮断窓の枚数も要求
される真空度、鏡筒の長さ等を考慮して決定すればよい
。また、上記実施例においては、Ｘ線源が管球方式の例
を述べたが、プラズマ方式やシンクロトロン軌道放射光
利用の場合も、同様の効果が得られる。特にシンクロト
ロン軌道放射光利用の場合、Ｘ線源は１０−ｇ〜１０−
”Ｔｏｒｒの超高真空を保つ必要があり、上記実施例の
鏡筒に相当するミラーポートが数ｍ以上と長いので、本
発明の効果はさらに大きいものとなる。In the above embodiment, the He pressure in the stage storage chamber was 100 Torr;
The number of blocking windows can be determined by considering the strength of the window, the exposure area, the attenuation of X-rays, etc. The number of blocking windows is also determined by considering the required degree of vacuum, length of the lens barrel, etc. do it. Further, in the above embodiments, an example is described in which the X-ray source is a tube type, but similar effects can be obtained when a plasma type or a synchrotron orbit synchrotron radiation is used. Especially when using synchrotron orbital synchrotron radiation, the X-ray source is 10-g to 10-
``It is necessary to maintain an ultra-high vacuum of Torr, and the mirror port corresponding to the lens barrel of the above embodiment is long, several meters or more, so the effects of the present invention are even greater.
第５図はＸ線源にシンクロトロン軌道放射光を利用した
場合であり、図中、４１は第１図８に相当するステージ
収納室、４２はミラー室、４３はシンクロトロンＸ線源
、４４は第１図の第２遮断窓７に相当するＢｅ窓、４５
は第１図の第１遮断窓４に相当する遮断窓、４７．４８
は第１図の遮断弁１５．１７に相当するゲートバルブ、
４９゜５０は第１図のバルブ１４．１６に相当するゲー
トバルブ、５１は高真空用のターボ分子ポンプあるいは
低真空用の油回転ポンプといった真空ポンプ、５３．５
４は、第１図のバイパス管２１．２２に相当するバイパ
ス管、５５は第１図の鏡筒６に相当するミラーポート、
５６は第１図１８に相当するＨｅ導入用バルブ、５７．
５８は第１図のリーク弁２３，２４に相当するリーク弁
である。FIG. 5 shows a case where synchrotron orbital synchrotron radiation is used as an X-ray source. In the figure, 41 is a stage storage room corresponding to FIG. 18, 42 is a mirror room, 43 is a synchrotron X-ray source, and 44 is a Be window 45 corresponding to the second blocking window 7 in FIG.
is a blocking window corresponding to the first blocking window 4 in FIG. 1, 47.48
is a gate valve corresponding to the shutoff valve 15.17 in Fig. 1,
49.50 is a gate valve corresponding to valve 14.16 in Figure 1, 51 is a vacuum pump such as a turbo molecular pump for high vacuum or an oil rotary pump for low vacuum, 53.5
4 is a bypass pipe corresponding to the bypass pipes 21 and 22 in FIG. 1; 55 is a mirror port corresponding to the lens barrel 6 in FIG. 1;
56 is a He introduction valve corresponding to FIG. 18; 57.
58 is a leak valve corresponding to the leak valves 23 and 24 in FIG.
上記構成における制御動作については、前記第４図制御
フローチャートと、同様のシーケンスで行 ′なうこ
とができる。真空条件はＸ線源内（遮断窓４５まで）が
１０−９〜１０−１０Ｔｏｒｒ 、遮断室４５からＢｅ
窓４４までが１０−１′〜１０−’Ｔ ｏｒｒ 。The control operation in the above configuration can be performed in the same sequence as the control flowchart in FIG. 4. The vacuum conditions are 10-9 to 10-10 Torr inside the X-ray source (up to the blocking window 45), and Be from the blocking chamber 45.
The distance up to window 44 is 10-1' to 10-' Torr.
ステージ収納室内（Ｂｅ窓４４まで）がＨｅ雰囲気１５
０Ｔｏｒｒである。The stage storage room (up to Be window 44) has a He atmosphere 15
It is 0 Torr.
［発明の効果］
以上説明したように、本発明では、真空手段（高真空ポ
ンプ１９）に連結されたＸ線源収納室３と、該Ｘ線源収
納室３に設けたＸ線取出し用の第１の遮断窓４と、Ｘ線
被照射体（マスク１２゜ウェハ１１）の搭載ステージ９
を収納しかつ減圧手段（低真空ポンプ２０）に連結され
たステージ収納室８と、前記第１の遮断窓４から取出さ
れたＸ線の気密照射通路（鏡筒６を通りステージ収納室
８内の被照射体に達するまでのＸ線経路）上に設けた少
なくとも１枚の第２の遮断窓７を具備している。従って
、第１、第２の遮断窓４．７間に仕切弁５を設けるとと
もに各遮断窓の両側をバイパス管２１．２２で連通させ
て真空排気を行なうことにより、排気系を大規模にする
ことなくかつ各遮断窓を充分薄くして真空排気が可能と
なり、遮断窓によるＸ線の吸収を小さくしさらにＨｅガ
ス等によるＸ線の吸収を小さくして効率良くＸ線を照射
してＸ線露光装置のスルーブツトを向上させることがで
きる。[Effects of the Invention] As explained above, in the present invention, the X-ray source storage chamber 3 connected to the vacuum means (high vacuum pump 19) and the A first blocking window 4 and a mounting stage 9 for the X-ray irradiated object (mask 12° wafer 11)
and a stage storage chamber 8 which stores the At least one second blocking window 7 is provided on the X-ray path (up to the object to be irradiated). Therefore, by providing a gate valve 5 between the first and second blocking windows 4, 7 and communicating both sides of each blocking window with bypass pipes 21, 22 to perform vacuum evacuation, the exhaust system can be made large-scale. This makes it possible to perform vacuum evacuation by making each blocking window sufficiently thin, reducing the absorption of X-rays by the blocking windows, and further reducing the absorption of X-rays by He gas, etc., and efficiently irradiating X-rays. The throughput of the exposure apparatus can be improved.
第１図は本発明に係るＸ線露光装置の構成図、第２図（
１）〜（４） は本発明に係るＸ線露光装置の露光開始
時の操作手順の説明図、第３図（１）。
（２） は本発明に係るＸ線露光装置の大気開放操作の
説明図、第４図は本発明実施例における制御シーケンス
、第５図は本発明における応用実施例、第６図は従来の
Ｘ線露光装置の構成図である。
１：電子銃、
２：ターゲット、
３：Ｘ線源収納室、
４：第１の遮断窓、
５：仕切弁、
６：鏡筒、
７：第２の遮断窓、
８：ステージ収納室、
９：ステージ、
１１：ウェハ、
１２：マスク、
１３：高真空ポンプ、
２０：低真空ポンプ、
２１．２２：バイパス管。
第１図Figure 1 is a configuration diagram of an X-ray exposure apparatus according to the present invention, and Figure 2 (
1) to (4) are explanatory diagrams of the operating procedure at the start of exposure of the X-ray exposure apparatus according to the present invention, and FIG. 3 (1). (2) is an explanatory diagram of the atmosphere opening operation of the X-ray exposure apparatus according to the present invention, FIG. 4 is a control sequence in an embodiment of the present invention, FIG. 5 is an applied example of the present invention, and FIG. FIG. 2 is a configuration diagram of a line exposure device. 1: Electron gun, 2: Target, 3: X-ray source storage chamber, 4: First blocking window, 5: Gate valve, 6: Lens barrel, 7: Second blocking window, 8: Stage storage chamber, 9 : stage, 11: wafer, 12: mask, 13: high vacuum pump, 20: low vacuum pump, 21.22: bypass pipe. Figure 1
Claims (5)
線源収納室と、該Ｘ線源収納室に設けたＸ線取出し用の
第１の遮断窓と、Ｘ線被照射体の搭載ステージを収納し
かつ減圧手段に連結されたステージ収納室と、前記第１
の遮断窓から取出されたＸ線の気密照射通路上に設けた
少なくとも１枚の第２の遮断窓とを具備したことを特徴
とするＸ線露光装置。(1) An X containing an X-ray source and connected to vacuum evacuation means
a radiation source storage chamber, a first blocking window for taking out X-rays provided in the X-ray source storage chamber, a stage storage chamber that stores a stage on which an X-ray irradiated object is mounted and is connected to a decompression means; Said first
An X-ray exposure apparatus comprising at least one second blocking window provided on an airtight irradiation path for X-rays taken out from the blocking window.
入部に設けられたことを特徴とする特許請求の範囲第１
項記載のＸ線露光装置。(2) Claim 1, characterized in that the second blocking window is provided in the X-ray intake section of the stage storage chamber.
The X-ray exposure apparatus described in .
路を仕切る開閉可能な仕切弁を具備し、さらに前記第１
および第２の各遮断窓の両側を各々バイパス管が連結し
て各遮断窓の両側を連通可能としたことを特徴とする特
許請求の範囲第１項または第２項記載のＸ線露光装置。(3) An openable and closable gate valve is provided for partitioning off the X-ray airtight irradiation passage between the first and second blocking windows, and the first
3. The X-ray exposure apparatus according to claim 1, wherein a bypass pipe connects both sides of each of the second blocking windows to enable communication between both sides of each blocking window.
めの弁手段を設けたことを特徴とする特許請求の範囲第
３項記載のＸ線露光装置。(4) The X-ray exposure apparatus according to claim 3, characterized in that valve means for opening and closing each bypass pipe is provided on each bypass pipe.
徴とする特許請求の範囲第１項から第４項までのいずれ
か１項記載のＸ線露光装置。(5) The X-ray exposure apparatus according to any one of claims 1 to 4, characterized in that two or more second blocking windows are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63049849A JPH01225118A (en) | 1988-03-04 | 1988-03-04 | X-ray exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63049849A JPH01225118A (en) | 1988-03-04 | 1988-03-04 | X-ray exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01225118A true JPH01225118A (en) | 1989-09-08 |
Family
ID=12842507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63049849A Pending JPH01225118A (en) | 1988-03-04 | 1988-03-04 | X-ray exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01225118A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0424181A2 (en) * | 1989-10-20 | 1991-04-24 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
| EP0441646A1 (en) * | 1990-02-09 | 1991-08-14 | Canon Kabushiki Kaisha | Gate valve device |
-
1988
- 1988-03-04 JP JP63049849A patent/JPH01225118A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0424181A2 (en) * | 1989-10-20 | 1991-04-24 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
| US5172403A (en) * | 1989-10-20 | 1992-12-15 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
| EP0424181B1 (en) * | 1989-10-20 | 2001-09-05 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
| EP0441646A1 (en) * | 1990-02-09 | 1991-08-14 | Canon Kabushiki Kaisha | Gate valve device |
| US5566922A (en) * | 1990-02-09 | 1996-10-22 | Canon Kabushiki Kaisha | Gate valve device |
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