JPH01223708A - Noise stop element - Google Patents
Noise stop elementInfo
- Publication number
- JPH01223708A JPH01223708A JP4861988A JP4861988A JPH01223708A JP H01223708 A JPH01223708 A JP H01223708A JP 4861988 A JP4861988 A JP 4861988A JP 4861988 A JP4861988 A JP 4861988A JP H01223708 A JPH01223708 A JP H01223708A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- wrapped
- layers
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 39
- 230000005291 magnetic effect Effects 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 4
- 150000002367 halogens Chemical class 0.000 claims abstract description 4
- 230000002265 prevention Effects 0.000 claims description 11
- 238000004804 winding Methods 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910000859 α-Fe Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Coils Or Transformers For Communication (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はディジタル機器におけるノイズ防止用素子に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a noise prevention element in digital equipment.
電子機器は信号のディジタル化、高速化により電源線あ
るいは信号線を介して電磁雑音を発生する。電磁雑音の
伝播には信号ラインとリターンラインを伝わるノーマル
モード成分と、信号ライン及びリターンラインとアース
を伝わるコモンモード成分とがあり、その対策として回
路基板上の信号ラインにフェライトビーズを貫通させて
組み込む方法がある。これは集積回路のパッケージと同
じ端子配列をもつ容器内に電線を貫通させた複数個のフ
ェライトビーズを収納してなるインダクタから構成され
ていた。Electronic equipment generates electromagnetic noise through power lines or signal lines due to the digitization and speeding up of signals. There are two types of electromagnetic noise propagation: a normal mode component that travels through the signal line and return line, and a common mode component that travels through the signal line, return line, and ground.As a countermeasure, ferrite beads are passed through the signal line on the circuit board. There is a way to incorporate it. This consisted of an inductor consisting of a plurality of ferrite beads with electrical wires passing through them inside a container with the same terminal arrangement as the integrated circuit package.
しかし従来のようにフェライトビーズを容器に収納して
なるノイズ防止素子では、フェライトリングコアの内孔
に通した電線と絶縁性台板に植設したピン端子とを半田
付等により接続していたため９組立て加工が難しく加工
費が高くなり、小型化に限界を生じている。However, in the conventional noise prevention element in which ferrite beads are housed in a container, the electric wire passed through the inner hole of the ferrite ring core and the pin terminal implanted in the insulating base plate are connected by soldering etc. Assembly is difficult and processing costs are high, putting a limit on miniaturization.
さらにフェライトの材料特性によシ、透磁率が４０００
〜５０００では数百ｋＨｚ 、透磁率が７００〜８００
では数ＭＨｚまでしか一定の透磁率が得られず。Furthermore, due to the material properties of ferrite, the magnetic permeability is 4000.
-5000 is several hundred kHz, magnetic permeability is 700-800
However, constant magnetic permeability can only be obtained up to several MHz.
ますます高速化高周波化している電子機器のノイズに対
応できなくなってきている。It is becoming increasingly difficult to cope with the noise generated by electronic equipment, which is becoming increasingly faster and has higher frequencies.
従って本発明の目的は、ディジタル機器に用いられる。The object of the invention is therefore to be used in digital equipment.
小型化が可能で、工数の節減ができ、高い周波数まで一
定の透磁率が得られるノイズ防止素子を提供しようとす
るものである。The present invention aims to provide a noise prevention element that can be miniaturized, reduce man-hours, and provide constant magnetic permeability up to high frequencies.
本発明によれば、電気伝導膜を電気絶縁膜で包み、さら
にその上を、ハロケ゛ン元素と強磁性元素を主体とする
アモルファスの強ｓ性層と結晶性の非磁性層を交互に重
ねた軟磁性多層膜で包むように成膜して成る薄膜インダ
クタンス素子を、集積回路のパッケージと同じ端子配列
を持つ容器内に装着して成ることを特徴とするノイズ防
止素子が得られる。According to the present invention, an electrically conductive film is wrapped with an electrically insulating film, and on top of the electrically conductive film, a soft layer consisting of alternating layers of amorphous ferromagnetic layers and crystalline nonmagnetic layers mainly composed of halogen elements and ferromagnetic elements is formed. A noise prevention element is obtained in which a thin film inductance element formed by being wrapped in a magnetic multilayer film is mounted in a container having the same terminal arrangement as an integrated circuit package.
次に本発明につき図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例であるノイズ防止素子の分解
斜視図（ａ）とその一部である薄膜インダクタンス素子
の断面図（ｂ）を併せ示した図である。第１図（ａ）に
おいて、集積回路パンケージケースと同じ型のノヤツケ
ージケース１１の上部の基板１２の上には８個の薄膜イ
ンダクタンス素子１３が配置されておシ（図では巻線部
分の上部を除去して示しである。）、各素子の両端の板
状端子１４は集積回路パンケージの板状端子と同じ型の
端子である・パックキャップ１５も集積回路７９ツケー
ジの場合と同じ形をしている。FIG. 1 is an exploded perspective view (a) of a noise prevention element according to an embodiment of the present invention, and a cross-sectional view (b) of a thin film inductance element that is a part thereof. In FIG. 1(a), eight thin film inductance elements 13 are arranged on a substrate 12 at the top of a wire cage case 11 of the same type as the integrated circuit pan cage case (in the figure, the winding portion is The plate terminals 14 at both ends of each element are of the same type as the plate terminals of the integrated circuit pancage.The pack cap 15 also has the same shape as the integrated circuit pancage. are doing.
薄膜インダクタンス素子１３は実線で示した上側の電気
伝導膜の巻線と点線で示した下側の巻線とが同相に巻回
して２相１ラインを形成している。In the thin film inductance element 13, the upper winding of the electrically conductive film indicated by the solid line and the lower winding indicated by the dotted line are wound in the same phase to form two phases and one line.
なおこの図では２つの巻線は別々に示しであるが。Note that in this figure, the two windings are shown separately.
主部分は実際には上下に重ねて配置してあり１巻線の中
央部附近に示す小さい丸印の部分で上層と下層が入れ替
るようになっている。The main parts are actually arranged one above the other, and the upper and lower layers are interchanged at the small circle mark near the center of one winding.
第１図（ｂ）は上記の薄膜インダクタンス素子の断面の
模式図である。秋田多層膜２１及び２２は。FIG. 1(b) is a schematic cross-sectional view of the above thin film inductance element. Akita multilayer films 21 and 22.
主たる膜組成が（Ｃ０ＺｒＮｂ）、６Ｆ４であるアモル
ファス磁性膜２３と膜組成が（ＣｏＺｒＮｂ ）ａ Ｏ
Ｆ６０である結晶性非磁性膜２４を交互に重ね、全体と
してすぐれた高周波特性を持つ多層膜である。アモルフ
ァス磁性膜２３と結晶性非磁性膜２４は膜蒸着時におけ
る磁性材料成分（ＣｏＺｒＮｂ ）とハロヶゞン元素成
分（Ｆ）の割合を変化させることによって得られるもの
でアシ、その成分比の相違によシ結晶形と磁気特性を異
にしている。この軟磁性多層膜の構成と製法については
特願昭６２−２００９５０号明細書に記載されている。The amorphous magnetic film 23 whose main film composition is (C0ZrNb) and 6F4 and whose film composition is (CoZrNb)aO
The crystalline nonmagnetic films 24 made of F60 are alternately stacked to form a multilayer film with excellent high frequency characteristics as a whole. The amorphous magnetic film 23 and the crystalline nonmagnetic film 24 are obtained by changing the ratio of the magnetic material component (CoZrNb) and the halogen element component (F) during film deposition. They have different crystal shapes and magnetic properties. The structure and manufacturing method of this soft magnetic multilayer film are described in Japanese Patent Application No. 62-200950.
電気伝導膜２５はコイル状のＣｕ膜から成っておシ、こ
の場合２つの巻線は同相に巻回して１ライン分を形成し
ている。そして２つの巻線の中間及び全体の外部はＳｉ
Ｏ２から成る電気絶縁膜２６で包まれている。この絶縁
カバーてれたコイルを前記の軟磁性多層膜２１及び２２
で包むと、２層１ラインの薄膜インダクタンス素子が形
成される。The electrically conductive film 25 is made of a coiled Cu film, and in this case, two windings are wound in the same phase to form one line. The middle of the two windings and the entire outside are made of Si.
It is covered with an electrical insulating film 26 made of O2. The coil with the insulating cover covered is connected to the soft magnetic multilayer films 21 and 22.
When wrapped with , a two-layer, one-line thin film inductance element is formed.
上記のようにして構成された薄膜インダクタンス素子の
インピーダンスは、 Ｉ ＭＨｚで５００Ω以上。The impedance of the thin film inductance element configured as described above is 500Ω or more at I MHz.
１０ ＭＨ３で１にΩ以上の特性を示した。又μ、−ｆ
特性は。At 10 MH3, it exhibited characteristics of 1Ω or higher. Also μ, -f
The characteristics are.
第２図に示すように、 １０ ＭＨｚ近くまでμが１２
０００もち、り 、 ３００ ＭＨｚでも１１０００以
上ある。比較して示した従来のフェライトを用いた場合
のデータをみると＝ ５００ ｋＨｚでは約３倍近く。As shown in Figure 2, μ is 12 up to near 10 MHz.
Even at 300 MHz, it is more than 11,000. Looking at the comparative data using conventional ferrite, it is nearly three times as high at 500 kHz.
数ＭＨｚでは１０倍近＜ 、 １０ ＭＨｚ以上では比
較にならない位大きくなる。At several MHz, it is nearly 10 times larger, and at 10 MHz or more, it becomes incomparably larger.
又、各薄膜インダクタンス素子の両端の板状端子はふつ
うの集積回路のノやツヶージの板状端子と同じ配置にな
っているので、ふつうの集積回路に直接組み合せて使用
することができる。Furthermore, since the plate terminals at both ends of each thin film inductance element are arranged in the same manner as the plate terminals of ordinary integrated circuits, they can be used in direct combination with ordinary integrated circuits.
第３図は以上のようＫして構成されたノイズ防止素子の
等節回路を示す図である。FIG. 3 is a diagram showing an equinodal circuit of the noise prevention element configured as described above.
〔発明の効果〕
以上説明したように２本発明によるノイズ防止素子は、
軟磁性多層膜を用いた薄膜インダクタンス素子を、集積
回路のパッケージと同じ型のパッケージに装着して構成
しであるので、小型安価で高周波特性が優れ、集積回路
と組合せて用いるのに適している。[Effects of the Invention] As explained above, the two noise prevention elements according to the present invention have the following effects:
It is constructed by mounting a thin film inductance element using a soft magnetic multilayer film in the same type of package as the integrated circuit package, so it is small and inexpensive, has excellent high frequency characteristics, and is suitable for use in combination with integrated circuits. .
第１図は本発明の一実施例であるノイズ防止素子の構成
を示す図、第２図は本発明のノイズ防止素子に装着した
薄膜インダクタンス素子の周波数特性を示す図、第３図
は本発明のノイズ防止素子の等価回路図を示す。
記号の説明：１１はパッケージケース、１２は基板、１
３は薄膜インダクタンス素子、１５はノクッケージキャ
ップ、２１と２２は軟磁性多層膜。
２３はアモルファス磁性膜、２４は結晶性非磁性膜、２
５は電気伝導膜、２６は電気絶縁膜、をそれぞれ示して
いる。
第１図FIG. 1 is a diagram showing the configuration of a noise prevention element that is an embodiment of the present invention, FIG. 2 is a diagram showing the frequency characteristics of a thin film inductance element attached to the noise prevention element of the present invention, and FIG. The equivalent circuit diagram of the noise prevention element is shown. Explanation of symbols: 11 is the package case, 12 is the board, 1
3 is a thin film inductance element, 15 is a knock cage cap, and 21 and 22 are soft magnetic multilayer films. 23 is an amorphous magnetic film, 24 is a crystalline nonmagnetic film, 2
Reference numeral 5 indicates an electrically conductive film, and reference numeral 26 indicates an electrically insulating film. Figure 1
Claims (1)
ハロゲン元素と強磁性元素を主体とするアモルファスの
強磁性層と結晶性の非磁性層を交互に重ねた軟磁性多層
膜で包むように成膜して成る薄膜インダクタンス素子を
，集積回路のパッケージと同じ端子配列を持つ容器内に
装着して成ることを特徴とするノイズ防止素子。1. The electrically conductive film is wrapped with an electrically insulating film, and then
A thin film inductance element is made of a soft magnetic multilayer film consisting of alternating layers of amorphous ferromagnetic layers and crystalline non-magnetic layers mainly composed of halogen elements and ferromagnetic elements. A noise prevention element characterized by being installed in a container having a terminal arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4861988A JPH01223708A (en) | 1988-03-03 | 1988-03-03 | Noise stop element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4861988A JPH01223708A (en) | 1988-03-03 | 1988-03-03 | Noise stop element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01223708A true JPH01223708A (en) | 1989-09-06 |
Family
ID=12808424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4861988A Pending JPH01223708A (en) | 1988-03-03 | 1988-03-03 | Noise stop element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01223708A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004006A1 (en) * | 2002-07-01 | 2004-01-08 | Infineon Technologies Ag | Electronic component comprising a multilayer wiring frame and method for producing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55145361A (en) * | 1979-04-27 | 1980-11-12 | Tdk Corp | Passive composite element package and fabricating method of the same |
| JPS59202614A (en) * | 1983-05-04 | 1984-11-16 | Showa Denko Kk | Magnetic element |
| JPS6224605A (en) * | 1985-07-25 | 1987-02-02 | Res Dev Corp Of Japan | Amorphous magnetic thin film |
| JPS6230871A (en) * | 1985-08-02 | 1987-02-09 | Res Dev Corp Of Japan | Production of thin film containing halogen |
-
1988
- 1988-03-03 JP JP4861988A patent/JPH01223708A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55145361A (en) * | 1979-04-27 | 1980-11-12 | Tdk Corp | Passive composite element package and fabricating method of the same |
| JPS59202614A (en) * | 1983-05-04 | 1984-11-16 | Showa Denko Kk | Magnetic element |
| JPS6224605A (en) * | 1985-07-25 | 1987-02-02 | Res Dev Corp Of Japan | Amorphous magnetic thin film |
| JPS6230871A (en) * | 1985-08-02 | 1987-02-09 | Res Dev Corp Of Japan | Production of thin film containing halogen |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004006A1 (en) * | 2002-07-01 | 2004-01-08 | Infineon Technologies Ag | Electronic component comprising a multilayer wiring frame and method for producing the same |
| US7294910B2 (en) | 2002-07-01 | 2007-11-13 | Infineon Technologies Ag | Electronic component with multilayered rewiring plate and method for producing the same |
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