JPH01219169A - Pretreating solution for electroless plating - Google Patents
Pretreating solution for electroless platingInfo
- Publication number
- JPH01219169A JPH01219169A JP4298288A JP4298288A JPH01219169A JP H01219169 A JPH01219169 A JP H01219169A JP 4298288 A JP4298288 A JP 4298288A JP 4298288 A JP4298288 A JP 4298288A JP H01219169 A JPH01219169 A JP H01219169A
- Authority
- JP
- Japan
- Prior art keywords
- group
- integer
- electroless plating
- groups
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 20
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 11
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 239000011737 fluorine Substances 0.000 claims abstract description 10
- -1 glycol ethers Chemical class 0.000 claims abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 6
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002563 ionic surfactant Substances 0.000 claims abstract description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000007788 liquid Substances 0.000 claims description 26
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- 125000002431 aminoalkoxy group Chemical group 0.000 claims description 2
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 2
- 125000005122 aminoalkylamino group Chemical group 0.000 claims description 2
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims 1
- 125000002252 acyl group Chemical group 0.000 claims 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 19
- 239000004094 surface-active agent Substances 0.000 abstract description 9
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 abstract description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 230000010534 mechanism of action Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 241000047703 Nonion Species 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- YSJGOMATDFSEED-UHFFFAOYSA-M behentrimonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCCCCCC[N+](C)(C)C YSJGOMATDFSEED-UHFFFAOYSA-M 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical class FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 125000004991 fluoroalkenyl group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- PDJAZCSYYQODQF-UHFFFAOYSA-N iodine monofluoride Chemical class IF PDJAZCSYYQODQF-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
- C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は無電解めっき用前処理液ζこ関するものであり
、特に印刷配線板の無電解銅めっき用前処理液に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pretreatment liquid for electroless plating, and particularly to a pretreatment liquid for electroless copper plating of printed wiring boards.
４、 〔従来の技術〕
印刷配線板は、銅張りまたは、銅のない積層板を穴明け
の後、無電解めっきを行うことによって製造される。4. [Prior Art] Printed wiring boards are manufactured by drilling holes in a copper-clad or copper-free laminate and then electroless plating the board.
従来、無電解銅めっきの前処理工程としては、アルカリ
脱脂工程、コンディショニング工程、表面銅箔のソフト
エノチング工程、酸洗工程、増感工程（触媒付与）、密
着促進工程等を行っている。Conventionally, pretreatment steps for electroless copper plating include an alkaline degreasing step, a conditioning step, a soft etching step for the surface copper foil, an acid washing step, a sensitization step (catalyst application), and an adhesion promotion step.
無電解めっき前処理としてのコンディショニングの働き
は親油性を帯びている基材を親水性にしてぬれ易くし、
後に行われる増感工程での触媒の吸着効果を促進させる
ことにある。The function of conditioning as a pretreatment for electroless plating is to make the lipophilic base material hydrophilic and make it easier to wet.
The purpose is to promote the adsorption effect of the catalyst in the subsequent sensitization step.
このコンディショニング工程に使用されるものとして、
ガラス等のめっきのつきにくい被めっき体に用いるもの
としてシランカップリング剤を用いた特公昭５９−５２
７０１号公報に開示された技術がある。What is used in this conditioning process is:
Japanese Patent Publication No. 59-52 using a silane coupling agent for use on objects to be plated that are difficult to plate, such as glass.
There is a technique disclosed in Japanese Patent No. 701.
（発明が解決しようとする課題）
しかしながら、従来の前処理液を用いると、コンディシ
ョニングでの水ぬれ性および脱泡性が必ずしも十分でな
い場合があり、半田浴浸漬でのプローホールの発生やス
ルーホール内に気泡が残存することによる触媒が吸着し
ないことによる、リング状のめっきボイドの発生すると
いう問題が起こる。この傾向は、特に***（キリ径０．
４ｕ以下）のスルーホールにおいて、顕著である。また
、合成樹脂に紙やガラス繊維を混入された複合材料系の
絶縁物質にあっては、そのガラス繊維等が表面に露出し
ていることがあり好適な条件を選んでもこの部分に無電
解めっきが析出しない現象が問題視されている。本発明
は、このような状況に鑑みてなされたものであり、ぬれ
性とめっき密着性に優れた無電解めっき用前処理液を提
供するものである。(Problems to be Solved by the Invention) However, when conventional pretreatment liquids are used, water wettability and defoaming properties during conditioning may not always be sufficient, and blowholes and through holes may occur during immersion in a solder bath. A problem arises in that ring-shaped plating voids are generated due to the catalyst not being adsorbed due to residual air bubbles inside. This tendency is especially true for small holes (hole diameter 0.
This is noticeable in through-holes (4u or less). In addition, in the case of composite insulating materials made of synthetic resin mixed with paper or glass fibers, the glass fibers may be exposed on the surface, and even if suitable conditions are selected, electroless plating will not be applied to these parts. The phenomenon of non-precipitation is viewed as a problem. The present invention has been made in view of these circumstances, and provides a pretreatment liquid for electroless plating that has excellent wettability and plating adhesion.
（課題を解決するための手段）
本発明の第１の請求項は、シランカップリング剤と、フ
ン素を含むイオン界面活性剤と、グリコールエーテール
類とからなることを特徴とする無電解めっき用前処理液
である。(Means for Solving the Problems) The first claim of the present invention provides electroless plating characterized by comprising a silane coupling agent, an ionic surfactant containing fluorine, and glycol ethers. This is a pretreatment liquid for use.
また、第２の請求項は、第１の請求項におけるシランカ
ップリング剤が、次の一般式で示される無電解めっき用
前処理液である。Further, a second claim is a pretreatment liquid for electroless plating in which the silane coupling agent in the first claim is represented by the following general formula.
Ｘｋ−３ｉ （（ＣＨｚ）Ｌ Ｙ） ４−ｋ〔但し、
式中、Ｋは１〜３の整数を表し、Ｘはメトキシ基、エト
シキ基などの低級アルコキシ基、アセトキシ基などの低
級アシル基、ＣＨ，Ｏ（ＣＨｚ）ｐｏ （但し、Ｐは
１〜１ｏの整数を表す。）などの低級アルコキシ基、塩
素原子、臭素原子、ヨウ素原子などのハロゲン原子の中
がら選ばれる１種または２種以上の基を表し、Ｙは水素
原子ビニル基などの低級アルケニル基、アミノ基、−（
ＣＨｚ）ｔ ＮＨ２（但しｔは１〜１０の整数を示す。Xk-3i ((CHz)L Y) 4-k [However,
In the formula, K represents an integer of 1 to 3; represents one or more groups selected from lower alkoxy groups such as (represents an integer), halogen atoms such as chlorine atom, bromine atom, and iodine atom, and Y represents a hydrogen atom or a lower alkenyl group such as a vinyl group. , amino group, -(
Hz)t NH2 (where t represents an integer from 1 to 10.
）などのアミノアルキル基、ＮＨ（ＣＨＩ）２ ＮＨ２
などのアミノアルキルアミノ基、−０（ＣＨｆｆｉ）Ｎ
Ｈｚなどのアミノアルコキシ基、ウレイド基の中から
選ばれる１種または２種以上の基（但し、前期Ｋが１の
場合については、Ｙがすべて水素原子であるものは除く
。）を表し、ｌはＹがビニル基等の低級アルケニル基の
場合には、０〜７の整数を表し、Ｙがその他の基の場合
には、１〜７の整数を表す。］
第３の請求項は、第１の請求項又は第２の請求項におけ
るグリコールエーテル類が、次の一般式で示される無電
解めっき用前処理液である。), aminoalkyl groups such as NH(CHI)2 NH2
aminoalkylamino groups such as -0(CHffi)N
Represents one or more groups selected from aminoalkoxy groups such as Hz and ureido groups (however, in the case where K is 1, excluding those in which all Y are hydrogen atoms), l represents an integer of 0 to 7 when Y is a lower alkenyl group such as a vinyl group, and represents an integer of 1 to 7 when Y is another group. ] The third claim is a pretreatment liquid for electroless plating in which the glycol ether in the first claim or the second claim is represented by the following general formula.
Ｒ−０（ＣＩｌＨｚ−０） ｔ Ｈ
（但し、Ｒはアルキル基、ｎは１〜４の整数を示す。ｔ
は１〜２の整数を示す。）
本発明の第１の請求項においては、シランカップリング
剤であればどのようなものでも用いることができるが、
特に第２の請求項に示すものが好ましい。これらの中で
も特に好適なものの具体例を限定ではなく単に例示の目
的で示すと、例えばＴ−アミノプロピルトリメトキシシ
ラン、Ｎ−β−（アミノエチル）−γ−アミノプロピル
トリメキシンラン、Ｔ−メルカプトプロピルトリメトキ
シシラン、ビニルトリクロロシラン、ビニルトリエトキ
シシラン、ビニルトリメトキシシラン、Ｎ−ビス（β−
ヒドロキシエチル）Ｔ−アミノプロピルエトキシシラン
、トリエトキシビニルシラン、トリメトキシビニルシラ
ンなどを挙げることができる。尚、これらのシランカッ
プリング剤は、ｌ種単独で用いてもよく、２種以上を組
み合わせて用いることも可能である。R-0(CIlHz-0) t H (wherein, R is an alkyl group, and n is an integer of 1 to 4.t
represents an integer of 1 to 2. ) In the first claim of the present invention, any silane coupling agent can be used, but
Particularly preferred are those shown in the second claim. Specific examples of particularly preferred ones among these are shown merely for the purpose of illustration and not limitation, such as T-aminopropyltrimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimexinlan, T-mercapto. Propyltrimethoxysilane, Vinyltrichlorosilane, Vinyltriethoxysilane, Vinyltrimethoxysilane, N-bis(β-
Examples include T-aminopropylethoxysilane (hydroxyethyl), triethoxyvinylsilane, and trimethoxyvinylsilane. Incidentally, these silane coupling agents may be used alone or in combination of two or more.
また、第１の請求項におけるフッ素を含む界面活性剤と
しては、テトラフルオロエチレンの重合によって得られ
るベルフルオルアルケニル基を有するフッ素を含む界面
活性剤、ヘキサフルオルプロペンの共電によって得られ
るベルフルオルアルケニル基を有するフッ素を含む界面
活性剤、電解フッ素化による直鎖ベルフルオルカルボン
酸フン化物から誘導されるもの、テロメリゼーションに
より得られるベルフルオルヨウ化物から誘導されるベル
フルオルアルキルエチルアルコール誘導体が例示される
。尚、これらの含フツ素界面活性剤は、１種単独で用い
てもよく２種以上を組み合わせて用いることも可能であ
る。Further, the fluorine-containing surfactant in the first claim includes a fluorine-containing surfactant having a berfluoroalkenyl group obtained by polymerization of tetrafluoroethylene, and a fluorine-containing surfactant obtained by co-electrolysis of hexafluoropropene. Fluorine-containing surfactants with fluoroalkenyl groups, those derived from linear perfluorocarboxylic acid fluorides by electrolytic fluorination, perfluoroalkyl ethyl alcohols derived from perfluoro iodides obtained by telomerization. Derivatives are exemplified. Incidentally, these fluorine-containing surfactants may be used alone or in combination of two or more.
第３の請求項におけるグリコールエーテル類は、その一
般弐が、
ＲＯ（ＣＩＩＨｚｌｌｏ） Ｌ Ｈ
（但し、Ｒはアルキル基、ｎは１〜４の整数を示す。（
は１〜２の整数を示す。）
であり、具体的には、例えばエチレングリコールモノメ
チルエーテル、ジエチレングリコールモノメチルエーテ
ル、トリエチレングリコールモノメチルエーテル、ポリ
エチレングリコールモノメチルエーテル、ジエチレング
リコールモノブチルエーテル、エチレングリコールモノ
フェニルエーテル、エチレングリコールモノメチルエー
テルアセテート、ジエチレングリコールジメチルエーテ
ル、ジエチレンオキサイド等または、これらの２種以上
の混合物等を挙げることができ、中でもジエチレングリ
コールジメチルエーテルまたは、この混合物が好ましい
。The glycol ethers in the third claim are as follows: RO(CIIHzllo) L H (wherein R is an alkyl group and n is an integer of 1 to 4.
represents an integer of 1 to 2. ), specifically, for example, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, diethylene glycol monobutyl ether, ethylene glycol monophenyl ether, ethylene glycol monomethyl ether acetate, diethylene glycol dimethyl ether, diethylene Examples include oxides, mixtures of two or more thereof, and diethylene glycol dimethyl ether and mixtures thereof are preferred.
本発明の無電解めっき用前処理液は、前記シランカップ
リング剤（〔Ａ〕酸成分と前記含フ・ノ素界面活性剤（
〔Ｂ］酸成分と前記グリコールエーテル１１（Ｃ）成分
）とを水溶液とすることによって得ることが出来る。こ
の前処理液中の前記〔八］、ＣＢ）、〔Ｃ〕、成分の？
農度は、通常次の範囲に設定すれば良い。すなわち、（
Ａ）成分の温度を好ましくは、０．１〜１０ｇ／ ｌと
し、かつ（Ｂ］酸成分濃度を好ましくは、０．１〜５０
ｇ／ ｌ、かつ〔Ｃ〕酸成分濃度を好ましくは、６０〜
１，０００ｍ１／ｌとする。ここで、上記各成分の濃度
は、各成分について２種以上のものを用いる場合には、
その合計量から計算される値とする。上記各成分の濃度
が前記の範囲にないと、無電解めっきの前処理として使
用した際に、基板の水ぬれ性が十分でなかったりブロー
ホールが発生したり、スルーホール内に気泡が残存する
ことがあり、その結果リング状のめっきボイドが発生す
る場合がある。The pretreatment liquid for electroless plating of the present invention comprises the silane coupling agent ([A] acid component and the nitrogen-containing surfactant ([A]).
[B] It can be obtained by forming an aqueous solution of the acid component and the glycol ether 11 (component C). What about the components [8], CB), and [C] in this pretreatment solution?
The agricultural rate should normally be set within the following range. That is, (
A) The temperature of the component is preferably 0.1 to 10 g/l, and the concentration of the acid component (B) is preferably 0.1 to 50 g/l.
g/l, and the [C] acid component concentration is preferably 60~
It is assumed to be 1,000m1/l. Here, when using two or more types of each component, the concentration of each component is as follows:
The value shall be calculated from the total amount. If the concentration of each of the above components is not within the above range, when used as a pretreatment for electroless plating, the water wettability of the substrate may be insufficient, blowholes may occur, or air bubbles may remain in the through holes. As a result, ring-shaped plating voids may occur.
本発明の前処理液を使用するにあたっては、通常例えば
次のように行えば良い。すなわち、例えば基材として基
板を用いる場合には、該基板に必要に応じて穴明けを行
った後に、さらに必要に応じて常法のアルカリ脱脂等に
よる脱脂処理を施した後該基板を本発明の前処理液によ
って処理する。When using the pretreatment liquid of the present invention, the following procedure may generally be used. That is, when a substrate is used as a base material, for example, after drilling holes in the substrate as necessary, and further performing a degreasing treatment such as alkaline degreasing using a conventional method as necessary, the substrate can be processed according to the present invention. Treat with pre-treatment liquid.
この前処理は、単に基板を前処理液に浸漬するだけで十
分である。この前処理液を使用する際の処理温度は、１
０〜４０℃とし処理時間は通常１〜１０分程度とすれば
良い。このようにして処理された基板は、簡単な水洗い
を行った後、ソフトエソチング工程、酸洗工程、ブリデ
イツプ処理増感工程（パラジウム等のめっき開始剤の付
与）および密着促進剤工程等の一般の前処理工程を経て
、無電解銅めっき工程に移すことができる。プリント配
線板の製造にあたっては上記の無電解めっきを行った基
板に、さらに、無電解めっき工程はんだレジスト工程、
はんだめっき工程、レジスト剥離工程、エノチング工程
等の処理を施して、製品を得ることができる。For this pretreatment, simply immersing the substrate in a pretreatment liquid is sufficient. The treatment temperature when using this pretreatment liquid is 1
The temperature is 0 to 40°C and the treatment time is usually about 1 to 10 minutes. After a simple water wash, the substrate treated in this way is subjected to general processes such as a soft ethoching process, an pickling process, a Bridip treatment sensitization process (applying a plating initiator such as palladium), and an adhesion promoter process. After the pretreatment process, it can be transferred to the electroless copper plating process. In manufacturing printed wiring boards, the above-mentioned electroless plated substrate is further subjected to electroless plating process, solder resist process,
A product can be obtained by performing treatments such as a solder plating process, a resist peeling process, and an etching process.
（作用）
本発明の前処理液を用いると、基板等の基材への水ぬれ
性を著しく向上させるとともに、ブローホールの発生や
スルーホール内の気泡の残存が防止でき、その結果、無
電解めっきの析出性、均一性を著しく向上させることが
でき、したがって、優れたプリント配線板等の製品を安
定かつ効率よく製造できる。これらの著しい改善効果は
、本発明の前処理液が、前記の如く特定の成分組成を有
していることにより生じるものであるが、各成分もしく
は、その組成液としての作用機構については、現段階で
は不明な点が多く、明確に述べることはできない。しか
しながら、その作用機構の一部に関する推察を述べるな
らば次のいくつかの点などを挙げることができる。(Function) When the pretreatment liquid of the present invention is used, it is possible to significantly improve the water wettability of base materials such as substrates, and also to prevent the generation of blowholes and the remaining of air bubbles in through holes. The deposition properties and uniformity of plating can be significantly improved, and therefore products such as excellent printed wiring boards can be manufactured stably and efficiently. These remarkable improvement effects are caused by the pretreatment liquid of the present invention having a specific component composition as described above, but the mechanism of action of each component or its composition liquid is currently unknown. At this stage, there are many unknown points and it is not possible to state clearly. However, if we were to speculate about a part of its mechanism of action, we can cite the following points.
本処理液中のシランカップリング剤は、積層板の基材の
表面に単分子膜を形成し、その外側の未４Ｍが親水性も
しくは、錯化剤としてしの性質を有しているので、前記
と同様にめっき開始剤が吸着し易くなる作用をおよぼす
ものと考えることができる。The silane coupling agent in this treatment liquid forms a monomolecular film on the surface of the base material of the laminate, and the non-4M on the outside has hydrophilic properties or properties as a complexing agent. It can be thought that this has the effect of making it easier for the plating initiator to be adsorbed, similar to the above.
さらに、本前処理液中の含フツ素界面活性剤は、親水性
と疎水性との調整作用等によって水ぬれ性を向上する作
用をおよぼすものと推察することができ、かつ、表面張
力を下げることができる。さらに、本前処理液中のグリ
コールエーテル類は、表面張力を低下せしめる作用を示
すとともに浸透性を有しており、基板等の基材のスルー
ホール内の脱泡性の向上などに有効に作用しているもの
と考えられる。そして、これらの各成分の協同作用によ
って、前記した優れた効果が生じるものと考えられる。Furthermore, it can be inferred that the fluorine-containing surfactant in this pretreatment liquid has the effect of improving water wettability by adjusting hydrophilicity and hydrophobicity, and also reduces surface tension. be able to. In addition, the glycol ethers in this pretreatment liquid have the effect of lowering surface tension and have permeability, and are effective in improving defoaming properties in through-holes of substrates and other base materials. It is thought that this is the case. It is believed that the above-mentioned excellent effects are produced by the cooperative action of these components.
実施例１
規格の異なる３種類のＮＨＭＡ規格によるＦＲ−４、Ｃ
ＥＭ−１およびＯＥＭ−３の両面銅張積層板に０．３ｆ
ｉのドリルにて穴明けし、パフ研磨、ホーニング処理し
たものを供試料とした。この処理基板を、以下の組成を
含む水溶液に温度６０℃の条件下で４分間前処理を行っ
た。Example 1 FR-4, C according to three different NHMA standards
0.3f on double-sided copper clad laminates of EM-1 and OEM-3
A hole was drilled using a drill (i), and the sample was subjected to puff polishing and honing. This treated substrate was pretreated with an aqueous solution containing the following composition at a temperature of 60° C. for 4 minutes.
Ｔ−アミノプロピルトリエトキシシランＡ−１１００（
日本ユニカー社、商品名）；２８／ｌ
ユニセーフＨＦ Ａ −５８４０（日本油脂株式会社、
商品名）；２ｇ／ｌ’
ジエチレングリコールジメチルエーテル（試薬−級）
；４００ ｍｌ ／ １その後、水洗後、
ソフトエツチングとして２００ｇ／ １の過硫酸アンモ
ニウムにｒ＋ ？Ｎし、酸洗いとしてｌＯ％ＨｚＳＯａ
に浸漬し、ブリデイツプとして２７０ｇ／ １のＰＤ−
２０１（日立化成工業株式会社、商品名）に浸漬し、増
感剤であるＭＳ−２０Ｂ（日立化成工業株式会社、商品
名）に浸漬し、密着促進剤であるＡＤＰ−２０２（日立
化成工業株式会社、商品名）に浸漬して無電解めっきの
前処理を行い無電解銅めっき液であるＣ Ｕ Ｓ Ｔ−
２０１（日立化成工業株式会社、商品名）に２０分間浸
漬してめっきを施し、その後、ピロリン酸銅めっきを３
Ａ／ｄ＋ｓ”で６４分間行い、その後、回路成形後、
ブローホールの発生テストを行った。ブローホールテス
トはＭＩＬ規格Ｐ−５５１１０に準拠し、まず湿度９５
％、温度６５℃の場所に８時間放置し、これを８回繰り
返して十分吸湿させたのち、２６０℃に加熱された溶融
半田浴に浸漬したときのブローホールの数を測定した。T-aminopropyltriethoxysilane A-1100 (
Nippon Unicar Co., Ltd., trade name); 28/l Unisafe HF A-5840 (Nippon Oil & Fats Co., Ltd.,
(Product name); 2g/l' diethylene glycol dimethyl ether (reagent grade)
400 ml/1 Then, after washing with water, add r+ to 200 g/1 ammonium persulfate for soft etching. N and pickling as lO%HzSOa
270g/1 PD-
201 (Hitachi Chemical Co., Ltd., trade name), immersed in the sensitizer MS-20B (Hitachi Chemical Co., Ltd., trade name), and adhesion promoter ADP-202 (Hitachi Chemical Co., Ltd.). C.U.S.T., an electroless copper plating solution, is pretreated for electroless plating by immersing it in a solution (trade name).
201 (Hitachi Chemical Co., Ltd., trade name) for 20 minutes, then copper pyrophosphate plating was applied for 30 minutes.
A/d+s'' for 64 minutes, then after circuit forming,
A blowhole generation test was conducted. The blowhole test is based on MIL standard P-55110, and first the humidity is 95%.
%, and left at a temperature of 65° C. for 8 hours, and after repeating this process 8 times to fully absorb moisture, the number of blowholes was measured when immersed in a molten solder bath heated to 260° C.
尚、このブローホールとは、スルーホールプリント配線
板に対してＩＣ等の部品を実装するときに起こる溶融半
田の熱に起因する欠陥で、スルーホール部分の銅めっき
が内部のガラス繊維の露出等により均一でないときに起
こり、内部の気体がめっき膜を局部的に破る現象をいう
。Furthermore, this blowhole is a defect caused by the heat of molten solder that occurs when components such as ICs are mounted on a through-hole printed wiring board, and the copper plating on the through-hole area may cause the glass fiber inside to be exposed. This is a phenomenon that occurs when the plating film is not uniform due to the plating film, and the internal gas locally ruptures the plating film.
実施例２
実施例１と同じ穴明き基板を以下の組成を含む前処理液
で温度６０℃の条件下で４分間前処理を行い、後の工程
は実施例１と同様に行った。Example 2 The same perforated substrate as in Example 1 was pretreated with a pretreatment liquid containing the following composition at a temperature of 60° C. for 4 minutes, and the subsequent steps were performed in the same manner as in Example 1.
（組成）
Ｔ−７ミノプロビルトリエトキシシランＡ−１１００（
日本ユニカー社、商品名）；０．１ｇ／ｌ
ユニセーフＨＦ Ａ −５８４０（日本油脂株式会社、
商品名）；０．１ｇ＃
ジエチレングリコールジメチルエーテル（試薬−級）
； ６０ｍｊ！＃！実施例３
実施例１と同じ穴明き基板に以下の組成を含む前処理液
で温度６０℃の条件下で４分間前処理を行い、後の工程
は実施例１と同様に行った。(Composition) T-7 Minoprobyltriethoxysilane A-1100 (
Nippon Unicar Co., Ltd., trade name); 0.1 g/l Unisafe HF A-5840 (Nippon Oil & Fats Co., Ltd.,
Product name); 0.1g# Diethylene glycol dimethyl ether (reagent grade)
; 60mj! #! Example 3 The same perforated substrate as in Example 1 was pretreated with a pretreatment liquid containing the following composition at a temperature of 60° C. for 4 minutes, and the subsequent steps were performed in the same manner as in Example 1.
〔組成〕
β−アミノエチル−Ｔ−アミノプロピルトリメトキシシ
ラン、 Ａ−１１２０（日本ユニカ−社、商品名）；
５ｇ／ｌ
フタージュント２５Ｈ，？、オス社、商品名）；５ｇ／
ｌ
エチレングリコールモノメチルエーテル（試薬−級）
； ５００ｍ／ ／ｅ比較例１
実施例１と同じ穴明き基板に以下の組成を含む前処理液
で温度６０℃の条件下で４分間前処理を行い、後の工程
は実施例１と同様に行った。[Composition] β-aminoethyl-T-aminopropyltrimethoxysilane, A-1120 (Nippon Unica Co., Ltd., trade name);
5g/l Futerjunto 25H,? , Osusha, product name); 5g/
l Ethylene glycol monomethyl ether (reagent grade)
; 500m/ /e Comparative Example 1 The same perforated substrate as in Example 1 was pretreated with a pretreatment liquid containing the following composition at a temperature of 60°C for 4 minutes, and the subsequent steps were the same as in Example 1. I went to
（一般にぬれ性が良く、浸透性を有する）ポリオキシエ
チレンオクチルフェニルエーテルであるノニオンＨ３−
２１０（日本油脂株式会社、商品名）；２ｇ／ｌ’
（増悪工程において、Ｐｄ等を吸着せしめる第４級アン
モニウム界面活性剤である）塩化ベヘニルトリメチルア
ンモニウムであるカチナールＤＣ−８０（東邦化学株式
会社、商品名）；２ｇ／ｆｆ
比較例２
実施例１と同じ穴明き）Ｓ仮を、実施例１の成分組み合
わせよりＡ−１１００を取り除いたもので温度６０℃の
条件−トで４分間前処理をを行い、後の工程は実施例１
と同様に行った。Nonion H3- which is polyoxyethylene octylphenyl ether (generally has good wettability and permeability)
210 (Nippon Oil & Fats Co., Ltd., trade name); 2 g/l' (a quaternary ammonium surfactant that adsorbs Pd, etc. in the exacerbation process) Catinal DC-80 (Toho Chemical Co., Ltd.), which is behenyltrimethylammonium chloride , trade name); 2 g/ff Comparative Example 2 The same perforated S as in Example 1 was prepared by removing A-1100 from the component combination of Example 1, and heated at a temperature of 60°C for 4 minutes. The subsequent steps are as per Example 1.
I did the same thing.
実施例１〜３と比較例１〜２の結果を第１表に示すよう
に実施例１〜３の前処理液は、比較例１〜２に比べて明
らかに優れていた。As the results of Examples 1-3 and Comparative Examples 1-2 are shown in Table 1, the pretreatment liquids of Examples 1-3 were clearly superior to Comparative Examples 1-2.
第１表
注１）スルーホール個数３００に対する個数（発明の効
果）
以上に説明したように、本発明によって、プリント配線
板用基板等の基材への水ぬれ性に優れ、穴明き基板等の
ブローホールの発生が少なく、スルーホールの内の脱泡
性に優れ、無電解めっきの析出性、均一性を著しく向上
させることができ、めっきボイドの発生を防止すること
ができる無電解めっき用前処理液を従供することができ
る。Table 1 Note 1) Number of through holes relative to 300 (effects of the invention) As explained above, the present invention has excellent water wettability to substrates such as printed wiring board substrates, and provides perforated substrates etc. For electroless plating, which produces fewer blowholes, has excellent degassing properties in through holes, can significantly improve the deposition performance and uniformity of electroless plating, and can prevent the occurrence of plating voids. A pretreatment liquid can be provided.
Claims (1)
活性剤と、グリコールエーテール類とからなることを特
徴とする無電解めっき用前処理液。 ２、シランカップリング剤が、次の一般式で示される請
求項１に記載の無電解めっき用前処理液。 Ｘｋ−Ｓｉ〔（ＣＨ＿２）＿Ｌ−Ｙ〕＿４＿−＿ｋ〔但
し、式中、Ｋは１〜３の整数を表し、Ｘはメトキシ基、
エトシキ基などの低級アルコキシ基、アセトキシ基など
の低級アシル基、ＣＨ＿３Ｏ（ＣＨ＿２）＿ＰＯ−（但
し、Ｐは１〜１０の整数を表す。）などの低級アルコキ
シ基、塩素原子、臭素原子、ヨウ素原子などのハロゲン
原子の中から選ばれる１種または２種以上の基を表し、
Ｙは水素原子ビニル基などの低級アルケニル基、アミノ
基、−（ＣＨ＿２）＿ｔＮＨ＿２（但しｔは１〜１０の
整数を示す。 ）などのアミノアルキル基、ＮＨ（ＣＨ＿２）＿２ＮＨ
＿２などのアミノアルキルアミノ基、−Ｏ（ＣＨ＿２）
ＮＨ＿２などのアミノアルコキシ基、ウレイド基の中か
ら選ばれる１種または２種以上の基（但し、前期Ｋが１
の場合については、Ｙがすべて水素原子であるものは除
く。）を表し、ｌはＹがビニル基等の低級アルケニル基
の場合には、０〜７の整数を表し、Ｙがその他の基の場
合Ｋは、１〜７の整数を表す。〕 ３、グリコールエーテル類が、次の一般式で示される請
求項１又は請求項２に記載の無電解めっき用前処理液。 Ｒ−Ｏ〔Ｃ＿ｎＨ＿２＿ｎＯ〕＿ｔＨ （但し、Ｒはアルキル基、ｎは１〜４の整数を示す。ｔ
は１〜２の整数を示す。）[Scope of Claims] 1. A pretreatment liquid for electroless plating characterized by comprising a silane coupling agent, an ionic surfactant containing fluorine, and glycol ethers. 2. The pretreatment liquid for electroless plating according to claim 1, wherein the silane coupling agent is represented by the following general formula. Xk-Si [(CH_2)_L-Y]_4_-_k [wherein, K represents an integer of 1 to 3, X is a methoxy group,
Lower alkoxy groups such as ethoxy group, lower acyl groups such as acetoxy group, lower alkoxy groups such as CH_3O(CH_2)_PO- (where P represents an integer from 1 to 10), chlorine atom, bromine atom, iodine atom represents one or more groups selected from halogen atoms such as,
Y is a hydrogen atom, a lower alkenyl group such as a vinyl group, an amino group, an aminoalkyl group such as -(CH_2)_tNH_2 (where t is an integer from 1 to 10), NH(CH_2)_2NH
Aminoalkylamino group such as _2, -O(CH_2)
One or more groups selected from aminoalkoxy groups such as NH_2 and ureido groups (however, if the former K is 1)
Cases in which all Y are hydrogen atoms are excluded. ), l represents an integer of 0 to 7 when Y is a lower alkenyl group such as a vinyl group, and K represents an integer of 1 to 7 when Y is another group. 3. The pretreatment liquid for electroless plating according to claim 1 or 2, wherein the glycol ether is represented by the following general formula. R-O[C_nH_2_nO]_tH (where, R is an alkyl group, and n is an integer of 1 to 4.t
represents an integer of 1 to 2. )
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4298288A JPH01219169A (en) | 1988-02-25 | 1988-02-25 | Pretreating solution for electroless plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4298288A JPH01219169A (en) | 1988-02-25 | 1988-02-25 | Pretreating solution for electroless plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01219169A true JPH01219169A (en) | 1989-09-01 |
Family
ID=12651243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4298288A Pending JPH01219169A (en) | 1988-02-25 | 1988-02-25 | Pretreating solution for electroless plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01219169A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006012891A (en) * | 2004-06-22 | 2006-01-12 | Fujikura Kasei Co Ltd | Method of manufacturing electromagnetic shielding film |
| JP2012504705A (en) * | 2008-10-02 | 2012-02-23 | マクダーミッド インコーポレーテッド | Method to improve surface solderability |
| WO2016129373A1 (en) * | 2015-02-12 | 2016-08-18 | 上村工業株式会社 | Pretreatment agent for electroless plating, and pretreatment method and manufacturing method for printed wiring board in which pretreatment agent for electroless plating is used |
| JP2018080369A (en) * | 2016-11-17 | 2018-05-24 | 上村工業株式会社 | Method for manufacturing printed circuit board |
| US11421325B2 (en) | 2019-05-28 | 2022-08-23 | C. Uyemura & Co., Ltd. | Method for producing a printed wiring board |
-
1988
- 1988-02-25 JP JP4298288A patent/JPH01219169A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006012891A (en) * | 2004-06-22 | 2006-01-12 | Fujikura Kasei Co Ltd | Method of manufacturing electromagnetic shielding film |
| JP2012504705A (en) * | 2008-10-02 | 2012-02-23 | マクダーミッド インコーポレーテッド | Method to improve surface solderability |
| US10138558B2 (en) | 2015-02-12 | 2018-11-27 | C. Uyemura & Co., Ltd. | Pretreatment agent for electroless plating, and pretreatment and production of printed wiring board using same |
| JP2016148076A (en) * | 2015-02-12 | 2016-08-18 | 上村工業株式会社 | Electroless plating pretreatment agent, method for pretreating printed circuit board using the same and method for manufacturing the printed circuit board |
| CN107208270A (en) * | 2015-02-12 | 2017-09-26 | 上村工业株式会社 | For the pretreating reagent of chemical plating and using this for pre-treating method of printed circuit board (PCB) of pretreating reagent of chemical plating and preparation method thereof |
| KR20170117073A (en) * | 2015-02-12 | 2017-10-20 | 우에무라 고교 가부시키가이샤 | Pretreatment agent for electroless plating, and pretreatment method and manufacturing method for printed wiring board in which pretreatment agent for electroless plating is used |
| EP3257967A4 (en) * | 2015-02-12 | 2018-09-05 | C. Uyemura & Co., Ltd. | Pretreatment agent for electroless plating, and pretreatment method and manufacturing method for printed wiring board in which pretreatment agent for electroless plating is used |
| WO2016129373A1 (en) * | 2015-02-12 | 2016-08-18 | 上村工業株式会社 | Pretreatment agent for electroless plating, and pretreatment method and manufacturing method for printed wiring board in which pretreatment agent for electroless plating is used |
| JP2018080369A (en) * | 2016-11-17 | 2018-05-24 | 上村工業株式会社 | Method for manufacturing printed circuit board |
| WO2018092410A1 (en) * | 2016-11-17 | 2018-05-24 | 上村工業株式会社 | Method for producing printed wiring board |
| EP3543372A4 (en) * | 2016-11-17 | 2020-07-08 | C. Uyemura & Co., Ltd. | Method for producing printed wiring board |
| TWI732045B (en) * | 2016-11-17 | 2021-07-01 | 日商上村工業股份有限公司 | Manufacturing method of printed wiring board |
| US11421325B2 (en) | 2019-05-28 | 2022-08-23 | C. Uyemura & Co., Ltd. | Method for producing a printed wiring board |
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