JPH01209951A - Power conversion device - Google Patents
Power conversion deviceInfo
- Publication number
- JPH01209951A JPH01209951A JP63036235A JP3623588A JPH01209951A JP H01209951 A JPH01209951 A JP H01209951A JP 63036235 A JP63036235 A JP 63036235A JP 3623588 A JP3623588 A JP 3623588A JP H01209951 A JPH01209951 A JP H01209951A
- Authority
- JP
- Japan
- Prior art keywords
- snubber
- circuit
- capacitor
- conversion device
- power conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Landscapes
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体スイッチング素子を用いた電力変換装
置で、特にスナバ回路の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a power conversion device using semiconductor switching elements, and particularly relates to an improvement of a snubber circuit.
第３図は還流ダイオードをエミッタ、コレクタ間に並列
した接続パワートランジスタ４〜７を、半導体スイッチ
ング素子としてブリッジ接続した単相インバータの１例
で、図中１は直流電圧源、２は直流中間電解コンデンサ
、３は配線インダクタンス、８は負荷を示す。Figure 3 shows an example of a single-phase inverter in which power transistors 4 to 7 are bridge-connected as semiconductor switching elements, with free-wheeling diodes connected in parallel between emitters and collectors. In the figure, 1 is a DC voltage source, and 2 is a DC intermediate electrolyte. The capacitor, 3 is the wiring inductance, and 8 is the load.
このような電力変換装置では素子のスイフーチング時に
おける過電圧保護回路として、スナバダイオード９、ス
ナバコンデンサｌＯ、スナバ抵抗１１からなるＲＣＤス
ナバ回路が付加される。In such a power conversion device, an RCD snubber circuit consisting of a snubber diode 9, a snubber capacitor lO, and a snubber resistor 11 is added as an overvoltage protection circuit during switching of the elements.
次に動作について説明すると、例えばパワートランジス
タ４．７のベースに同時にＯＮ信号を送った場合、パワ
ートランジスタ４．７はＯＮ状態となり、電解コンデン
サ２の正極側から配線インダクタンス３→パワートラン
ジスタ４のコレクタ→同エミッタ→負荷８→パワートラ
ンジスタ７のコレクター同エミッターコンデンサ２の負
極側という経路をたどる。Next, to explain the operation, for example, if an ON signal is sent to the base of the power transistor 4.7 at the same time, the power transistor 4.7 will be in the ON state, and the wiring inductance 3 will be connected from the positive electrode side of the electrolytic capacitor 2 to the collector of the power transistor 4. → Emitter → Load 8 → Collector of power transistor 7 Emitter The negative electrode side of capacitor 2 is followed.
一方、パワートランジスタ４．７のベースに同時にＯＦ
Ｆ信号を送るとパワートランジスタ４゜７はＯＦＦ状態
になり負荷８が誘導性の時はパワートランジスタ５，６
の還流ダイオードを通ってＯＮ時の逆向きの直流電流が
流れる。On the other hand, at the same time, the OF
When the F signal is sent, the power transistor 4゜7 is turned off, and when the load 8 is inductive, the power transistors 5 and 6 are turned off.
A direct current in the opposite direction when turned on flows through the freewheeling diode.
前記スナバ回路が無い場合、パワートランジスタ４．７
のスイッチングオフ時のコレクタ電流変化率ｄｉｃ／ｄ
ｔと配線インダクタンス３によって〔（電源電圧）＋（
配線インダクタンス３））Ｘ（（直流回路に流れる電流
変化率−ｄｉｃ ／ ｄｔ） ）で表せるスパイク電圧
が発生し、配線インダクタンス３の大きさによっては素
子の定格電圧以上になり破壊につながるおそれがある。If there is no snubber circuit, the power transistor 4.7
Collector current change rate dic/d when switching off
t and wiring inductance 3, [(power supply voltage) + (
A spike voltage expressed as wiring inductance 3)) x ((rate of change of current flowing in the DC circuit - dic/dt)) is generated, and depending on the size of wiring inductance 3, it may exceed the rated voltage of the element and lead to destruction. .
前記ＲＣＤスナバ回路をつけることによって、回路を流
れる電流の変化率をコレクタ電流の変化率よりもゆるや
かなものとし、これによって配線インダクタンス３の発
生する過電圧を抑制しようとするものである。By providing the RCD snubber circuit, the rate of change of the current flowing through the circuit is made slower than the rate of change of the collector current, thereby suppressing overvoltage generated by the wiring inductance 3.
電流の変化率をコレクタ電流の変化率よりもゆるやかな
ものとし、これによって配線インダクタンス３の発生す
る過電圧を抑制しようとするものである。しかし実際の
回路ではＲＣＤスナバ回路自体に（配線インダクタンス
とスナバコンデンサ自体の内部インダタンス）インダク
タンス１２が存在し、（インダクタンス１２） Ｘ （
スナバ回路の電流上昇率）の電圧がスナバコンデンサ１
０の端子電圧に重畳されて、パワートランジスタ４〜７
のコレクタ、エミッタ間に印加され、スナバ回路におけ
るエネルギー吸収効果が低下してしまう。The rate of change of the current is set to be slower than the rate of change of the collector current, thereby suppressing overvoltage generated in the wiring inductance 3. However, in the actual circuit, inductance 12 exists in the RCD snubber circuit itself (wiring inductance and internal inductance of the snubber capacitor itself), and (inductance 12)
Snubber capacitor 1
0 terminal voltage, power transistors 4 to 7
is applied between the collector and emitter of the snubber circuit, reducing the energy absorption effect in the snubber circuit.
また、スナバダイオード９における逆回復電流消滅時の
スナバダイオード電流の変化率が大きい場合、スナバダ
イオード９のアノード、カソード間に印加されるスパイ
ク状の電圧の尖頭値が高くなり、場合によってはスナバ
ダイオードにもスナバ回路が必要になることもある。Furthermore, if the rate of change in the snubber diode current when the reverse recovery current disappears in the snubber diode 9 is large, the peak value of the spike-like voltage applied between the anode and cathode of the snubber diode 9 becomes high, and in some cases, the snubber diode Diodes may also require a snubber circuit.
このようにＲＣＤスナバ回路をつける際には、回路構成
の複雑さ、部品点数増加の可能性など、装置自体のコス
トアップを生じてしまう。When installing an RCD snubber circuit in this manner, the cost of the device itself increases due to the complexity of the circuit configuration and the possibility of an increase in the number of parts.
そこで、第４図に示すようにスナバ回路をコンデンサ１
３のみで構成することにより配線インダクタンスを０に
近づける接続方法も知られている。Therefore, as shown in Figure 4, the snubber circuit is connected to the capacitor 1.
A connection method is also known in which the wiring inductance is brought close to 0 by configuring only 3.
このコンデンサ１３のみのスナバ回路とすることで、配
線インダクタンス３が存在する時の重畳電圧を吸収でき
るとともに回路構成が簡素化でき、部品点数も大幅に減
らすことができる。By forming a snubber circuit with only this capacitor 13, the superimposed voltage when the wiring inductance 3 is present can be absorbed, the circuit configuration can be simplified, and the number of parts can be significantly reduced.
しかし、この第４図に示す直流母線端にスナバコンデン
サ１３を取付ける従来方式ではインバータ装置における
直流回路の配線インダクタンスとスナバコンデンサで共
振現象が発生し、これによってそのスナバコンデンサ電
流、電圧の責務は共に厳しいものになり、その振動状態
によっては大形のスナバコンデンサが必要となる。However, in the conventional method of installing the snubber capacitor 13 at the end of the DC bus as shown in FIG. Depending on the vibration conditions, a large snubber capacitor may be required.
本発明の目的は前記従来例の不都合を解消し、スナバ回
路をコンデンサのみで構成して回路を簡素化した場合で
も、直流配線のインダクタンスとの共振を抑制して、ス
ナバコンデンサの責務を軽減し、スナバ回路の小形化が
図れる電力変換装置を提供することにある。An object of the present invention is to eliminate the disadvantages of the conventional example, and even when the snubber circuit is made up of only capacitors to simplify the circuit, resonance with the inductance of the DC wiring can be suppressed and the responsibility of the snubber capacitor can be reduced. Another object of the present invention is to provide a power converter device that allows a snubber circuit to be miniaturized.
本発明は前記目的を達成するため、直流電圧源に接続す
る正極側主回路配線と負極側主回路配線間にスナバコン
デンサを接続する電力変換装置において、前記正極側主
回路配線と負極側主回路配線間に絶縁物を介在させて積
層構造とし、スナバコンデンサはこれを分割して該積層
回路配線の導体間に適宜間隔で接続したことを要旨とす
るものである。In order to achieve the above object, the present invention provides a power conversion device in which a snubber capacitor is connected between the positive main circuit wiring and the negative main circuit wiring connected to a DC voltage source. The gist is that an insulator is interposed between the wirings to form a laminated structure, and the snubber capacitor is divided and connected between the conductors of the laminated circuit wiring at appropriate intervals.
（作用〕
本発明によれば、インバータ装置の直流回路の正極側配
線と負極側配線とは積層構造となるので、配線インダク
タンスが極力小さくなる。また、この積層配線にスナバ
コンデンサを分散配置することで共振を抑制でき、スナ
バ回路の小形化が図かれる。(Function) According to the present invention, since the positive electrode side wiring and the negative electrode side wiring of the DC circuit of the inverter device have a laminated structure, the wiring inductance is minimized.Furthermore, snubber capacitors can be distributed in this laminated wiring. Resonance can be suppressed and the snubber circuit can be made smaller.
（実施例〕 以下、図面について本発明の実施例を詳細に説明する。(Example〕 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の電力変換装置の１実施例を示す回路図
で前記従来例を示す第３図、第４図と同一構成要素には
同一参照符号を付したものである。FIG. 1 is a circuit diagram showing one embodiment of the power conversion device of the present invention, and the same components as in FIGS. 3 and 4 showing the conventional example are given the same reference numerals.
すなわち、半導体スイッチング素子としてパワートラン
ジスタ４〜７をブリッジ接続した単相インバータで、図
中１は直流電圧源、２は直流中間電解コンデンサを示す
。That is, it is a single-phase inverter in which power transistors 4 to 7 are bridge-connected as semiconductor switching elements, and in the figure, 1 indicates a DC voltage source, and 2 indicates a DC intermediate electrolytic capacitor.
このようなインバータ装置の直流電圧源１に接続する正
極側主回路と負極側主回路間にコンデンサのみによるス
ナバ回路を形成する場合に、第２図に示すように直流電
圧の正極側の導体１５と負極側の導体１６との間に板体
などによる絶縁物１７を介在させて積層配線とした。When forming a snubber circuit using only a capacitor between the positive side main circuit and the negative side main circuit connected to the DC voltage source 1 of such an inverter device, as shown in FIG. An insulator 17 such as a plate is interposed between the conductor 16 on the negative electrode side and the conductor 16 on the negative electrode side to form a laminated wiring.
さらに、スナバコンデンサ１４はこれを複数に分割した
小さなコンデンサとし、該スナバコンデンサ１４を前記
正極側の導体１５と負極側の導体１６とに適当な間隔で
掛は渡すように取付けた。Further, the snubber capacitor 14 is a small capacitor divided into a plurality of parts, and the snubber capacitor 14 is attached to the positive conductor 15 and the negative conductor 16 at appropriate intervals.
第２図中、１９はパワートランジスタ、２０は出力用導
体を示す。In FIG. 2, 19 indicates a power transistor, and 20 indicates an output conductor.
この第１図の回路の動作については前記第３図で説明し
た従来例と同じなので説明を省略するが、正極側と負極
側との主回路の導体１５． １６の相互間は絶縁物１７
による積層構造なので配線インダクタンスが低減し、ま
たスナバコンデンサ１４は複数個に分散して直流電圧源
１と並列に取付けたのでＬＣによる振動系が分散される
。The operation of the circuit shown in FIG. 1 is the same as that of the conventional example explained in FIG. 3, so the explanation will be omitted. 16 is an insulator 17 between each other.
The multilayer structure reduces the wiring inductance, and since the snubber capacitors 14 are distributed into a plurality of pieces and installed in parallel with the DC voltage source 1, the vibration system caused by the LC is dispersed.
以上述べたように本発明の電力変換装置は、直流電圧源
に接続する正極側主回路配線と負極側主回路配線間にス
ナバコンデンサを接続する電力変換装置において、直流
電圧源に接続する主回路の配線インダクタンスを低減で
きるとともに、スナバコンデンサのＬＣ振動系を分散し
て該コンデンサの電流電圧責務を従来と比べて小さくで
き、その結果個々のコンデンサの容量、許容電流は小さ
くてすみ、装置全体の小型化を達成できるものである。As described above, the power conversion device of the present invention is a power conversion device in which a snubber capacitor is connected between the positive side main circuit wiring connected to the DC voltage source and the negative side main circuit wiring. In addition to reducing the wiring inductance of the snubber capacitor, the LC oscillation system of the snubber capacitor is dispersed, and the current and voltage duties of the capacitor can be made smaller than before.As a result, the capacitance and allowable current of each individual capacitor can be reduced, and the overall equipment It is possible to achieve miniaturization.
第１図は本発明の電力変換装置の１実施例を示す回路図
、第２図は同上外観斜視図、第３図は従来例を示す回路
図、第４図は他の従来例を示す回路図である。
１・・・直流電圧源 ２・・・直流中間電解コンデ
ンサ３・・・主回路の配線インダクタンス
４〜７・・・パワートランジスタ
８・・・負荷
９・・・スナバダイオード
１０・・・スナバコンデンサ
１１・・・スナバ抵抗
１２・・・スナバ回路の配線インダクタンス１３、１４
・・・コンデンサ １５．１６・・・導体１７・・・絶
縁物 １９・・・パワートランジスタ２０・・
・出力用導体Fig. 1 is a circuit diagram showing one embodiment of the power conversion device of the present invention, Fig. 2 is an external perspective view of the same as above, Fig. 3 is a circuit diagram showing a conventional example, and Fig. 4 is a circuit showing another conventional example. It is a diagram. 1... DC voltage source 2... DC intermediate electrolytic capacitor 3... Main circuit wiring inductance 4 to 7... Power transistor 8... Load 9... Snubber diode 10... Snubber capacitor 11 ... Snubber resistor 12 ... Snubber circuit wiring inductance 13, 14
...Capacitor 15.16...Conductor 17...Insulator 19...Power transistor 20...
・Output conductor
Claims (1)
配線間にスナバコンデンサを接続する電力変換装置にお
いて、前記正極側主回路配線と負極側主回路配線間に絶
縁物を介在させて積層構造とし、スナバコンデンサはこ
れを分割して該積層回路配線の導体間に適宜間隔で接続
したことを特徴とする電力変換装置。In a power conversion device in which a snubber capacitor is connected between the positive main circuit wiring and the negative main circuit wiring connected to a DC voltage source, an insulator is interposed between the positive main circuit wiring and the negative main circuit wiring, and 1. A power conversion device characterized in that the snubber capacitor is divided and connected between the conductors of the laminated circuit wiring at appropriate intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63036235A JPH01209951A (en) | 1988-02-18 | 1988-02-18 | Power conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63036235A JPH01209951A (en) | 1988-02-18 | 1988-02-18 | Power conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01209951A true JPH01209951A (en) | 1989-08-23 |
Family
ID=12464113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63036235A Pending JPH01209951A (en) | 1988-02-18 | 1988-02-18 | Power conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01209951A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059191U (en) * | 1991-07-12 | 1993-02-05 | 株式会社東芝 | Switching circuit |
| JPH09308265A (en) * | 1996-05-16 | 1997-11-28 | Denso Corp | Inverter apparatus |
| KR100438278B1 (en) * | 2001-12-21 | 2004-07-02 | 엘지전자 주식회사 | Apparatus for BLDC motor drive |
| JP2010041790A (en) * | 2008-08-04 | 2010-02-18 | Fuji Electric Systems Co Ltd | Power conversion apparatus |
| WO2013132827A1 (en) * | 2012-03-05 | 2013-09-12 | 富士電機株式会社 | Power conversion device |
| WO2018210869A1 (en) * | 2017-05-16 | 2018-11-22 | Valeo Siemens Eautomotive Germany Gmbh | Inverter with intermediate circuit capacitor cascade and dc-side common-mode and differential-mode filters |
| JP2020184561A (en) * | 2019-05-07 | 2020-11-12 | 住友電気工業株式会社 | Semiconductor device |
-
1988
- 1988-02-18 JP JP63036235A patent/JPH01209951A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059191U (en) * | 1991-07-12 | 1993-02-05 | 株式会社東芝 | Switching circuit |
| JPH09308265A (en) * | 1996-05-16 | 1997-11-28 | Denso Corp | Inverter apparatus |
| KR100438278B1 (en) * | 2001-12-21 | 2004-07-02 | 엘지전자 주식회사 | Apparatus for BLDC motor drive |
| JP2010041790A (en) * | 2008-08-04 | 2010-02-18 | Fuji Electric Systems Co Ltd | Power conversion apparatus |
| WO2013132827A1 (en) * | 2012-03-05 | 2013-09-12 | 富士電機株式会社 | Power conversion device |
| CN104054245A (en) * | 2012-03-05 | 2014-09-17 | 富士电机株式会社 | Power conversion device |
| EP2824815A4 (en) * | 2012-03-05 | 2015-11-04 | Fuji Electric Co Ltd | Power conversion device |
| US9484829B2 (en) | 2012-03-05 | 2016-11-01 | Fuji Electric Co., Ltd. | Power conversion device including noise suppression capacitor |
| WO2018210869A1 (en) * | 2017-05-16 | 2018-11-22 | Valeo Siemens Eautomotive Germany Gmbh | Inverter with intermediate circuit capacitor cascade and dc-side common-mode and differential-mode filters |
| US11018572B2 (en) | 2017-05-16 | 2021-05-25 | Valeo Siemens Eautomotive Germany Gmbh | Inverter with intermediate circuit capacitor cascade and DC-side common-mode and differential-mode filters |
| JP2020184561A (en) * | 2019-05-07 | 2020-11-12 | 住友電気工業株式会社 | Semiconductor device |
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