JPH01208882A - Semiconductor magnetoresistance element - Google Patents
Semiconductor magnetoresistance elementInfo
- Publication number
- JPH01208882A JPH01208882A JP63034251A JP3425188A JPH01208882A JP H01208882 A JPH01208882 A JP H01208882A JP 63034251 A JP63034251 A JP 63034251A JP 3425188 A JP3425188 A JP 3425188A JP H01208882 A JPH01208882 A JP H01208882A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electrodes
- short
- deposited
- semiconductor magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000206 photolithography Methods 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体の磁気抵抗効果を利用して磁界の変化
を検出する各種センサ、例えば１回転センサ、位置検出
セｙす等に用いられる半導体磁気抵抗素子に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to semiconductor magnetic sensors used in various sensors that detect changes in magnetic fields by utilizing the magnetoresistive effect of semiconductors, such as one-rotation sensors, position detection sensors, etc. This relates to resistive elements.
従来の技術
従来、半導体に磁界を加えると抵抗が増加する現象は磁
気抵抗効果として知られておシ、この性質を利用した半
導体磁気抵抗素子は１位置検出。Conventional Technology Conventionally, the phenomenon in which resistance increases when a magnetic field is applied to a semiconductor is known as the magnetoresistive effect, and semiconductor magnetoresistive elements that utilize this property detect one position.
歯車の回転検出センナ等に用いられている。従来の半導
体磁気抵抗素子を第４図に示す。第４図で１は基板であ
シ、アルミナ等の基材が用いられる。Used in gear rotation detection sensors, etc. A conventional semiconductor magnetoresistive element is shown in FIG. In FIG. 4, reference numeral 1 indicates a substrate, and a base material such as aluminum or aluminum is used.
２は半導体磁気抵抗膜であシ、電子移動度が高い。2 is a semiconductor magnetoresistive film and has high electron mobility.
という理由からＩｎＳｂが一役に用いられる。３は短絡
電標、４は端子電極である。３．４の電極材料としては
Ｃｕ 、ム１等が用いられる。前記短絡電極３は、磁気
抵抗効果の効率を高めるために必要であり、前記短絡電
極３で区切られた半導体の寸法ｌとＷの比Ｗ ／ ＡＦ
は大きいほうがよく、一般にはｗ／Ｊ＝１ｏが用いられ
る。第６図は第４図の磁気抵抗素子をＢ −Ｂ’で切っ
たときの断面図である。第４図に示した磁気抵抗素子は
、一般【は第６図に示すように蛇行形状化した、２つの
磁気抵抗素子を直列接続して端子６−７間に電圧を印加
して、６−６間に発生する電圧を出力として取り出す。For this reason, InSb is used to play a role. 3 is a short-circuit electric sign, and 4 is a terminal electrode. As the electrode material of 3.4, Cu, Mu1, etc. are used. The shorting electrode 3 is necessary to increase the efficiency of the magnetoresistive effect, and the ratio of the dimensions l and W of the semiconductor separated by the shorting electrode 3 is W/AF
The larger the value, the better, and generally w/J=1o is used. FIG. 6 is a cross-sectional view of the magnetoresistive element shown in FIG. 4 taken along line B-B'. The magnetoresistive element shown in FIG. 4 is generally produced by connecting two magnetoresistive elements in series, each having a meandering shape as shown in FIG. The voltage generated between 6 and 6 is taken out as an output.
つまシ、セ／すとして用いる場合、第６図の点線で囲ま
れた部分が感知部となる。When used as a tab or center, the part surrounded by the dotted line in FIG. 6 becomes the sensing part.
第４図及び第６図の半導体磁気抵抗素子の製造方法を第
７図に基づいて以下に示す。まず、基板１全面上に半導
体磁気抵抗膜２としてＩｎＳｂの薄膜を形成する（第７
図ａ）。薄膜としてはＩｎＳｂの単結晶を研摩して薄片
化したもの又は、 ＩｎＳｂの蒸着膜が用いられる。A method for manufacturing the semiconductor magnetoresistive elements shown in FIGS. 4 and 6 will be described below based on FIG. 7. First, an InSb thin film is formed as the semiconductor magnetoresistive film 2 on the entire surface of the substrate 1 (seventh
Diagram a). As the thin film, a single crystal of InSb is polished into thin pieces, or a vapor-deposited film of InSb is used.
次に端子電極及び短絡電極用の金・、４膜８を蒸着又は
、メツキ法で成膜する（第７図ｂ）。次てフォトリソグ
ラフィ技術及び、エツチング技術を用いて所望の電極パ
ターンの短絡電極３．端子電極４を形成する（第７図０
）。Next, a gold film 8 for terminal electrodes and short-circuit electrodes is formed by vapor deposition or plating (FIG. 7b). Next, a desired electrode pattern is formed using photolithography and etching techniques. Forming the terminal electrode 4 (Fig. 70)
).
最後にフォトリソグラフィ技術及びエツチング技術を用
いて、不要部分のＩｎＳｂを取シ除いて所望の磁気抵抗
素子のパターンを形成する（第７図ｄ）。Finally, using photolithography and etching techniques, unnecessary portions of InSb are removed to form a desired pattern of the magnetoresistive element (FIG. 7d).
前記エツチングにはエツチング液を用いる湿式法が用い
られる。以上が従来の半導体磁気抵抗素子及びその製造
法である。A wet method using an etching solution is used for the etching. The above is the conventional semiconductor magnetoresistive element and its manufacturing method.
発明が解決しようとする課題
ところで、前述のとうり、短絡電極によって区切られた
半導体の形状は、その長さｌと：嘔Ｗの比Ｗ／ｌが大き
いほうが、高い磁気抵抗効果を得られる。従って、ｌは
小さいことが望ましい。又、位置検出センサ及び回転セ
ンサ等に対する近年の要望は、微少変位の検出の傾向が
強まっており、第６図に示した感知部の面積は縮小化す
る必要がある。これに伴い第６図に示した蛇行形状の半
導体磁気抵抗の幅、つまり胃は小さくする必要が生じ、
最終的に前記ｌも小さくする必要がある。例えば、前記
磁気抵抗の；［Ｗ＝１００ミクロンのとき１＝１ｏミク
ロンにしなくてはならない。ｌを決定するのは前記短絡
電極の加工精度であるからこの部分の精度をいかにして
高くするかが問題となる。ところが前述のとうり、短絡
電極の加工は湿式法によるエツチングで行っているので
あるが。Problems to be Solved by the Invention As described above, when the shape of the semiconductor separated by the short-circuit electrode has a larger ratio W/l between the length l and :w, a higher magnetoresistive effect can be obtained. Therefore, it is desirable that l be small. Further, in recent years, demand for position detection sensors, rotation sensors, etc. is increasing toward detection of minute displacements, and the area of the sensing portion shown in FIG. 6 needs to be reduced. Along with this, it became necessary to reduce the width, or stomach, of the meandering semiconductor magnetoresistance shown in FIG.
Ultimately, it is necessary to reduce the above l as well. For example, for the magnetoresistance; [When W=100 microns, 1=10 microns must be set. Since l is determined by the processing accuracy of the short-circuiting electrode, the problem is how to improve the accuracy of this part. However, as mentioned above, the short-circuit electrode is processed by wet etching.
一般に知られているとうり湿式法によるエツチングには
サイドエツチング及び局部電池反応だよるエツチングの
局部的進行などの問題があるためて１０ミクロンといっ
た微細寸法を安定して出すことには限界がある。その結
果磁気抵抗素子としての特性も、ばらつきが多くなって
いた。以上のように、従来の構造を持つ半導体磁気抵抗
素子では。As is generally known, wet etching has problems such as side etching and local progress of etching due to local cell reactions, so there is a limit to the ability to stably produce fine dimensions of 10 microns. As a result, the characteristics as a magnetoresistive element also varied widely. As described above, in a semiconductor magnetoresistive element with a conventional structure.
素子の小型化に伴い高い磁気特性を安定して取り出せな
いと言う問題があった。As devices become smaller, there has been a problem in that high magnetic properties cannot be stably obtained.
本発明ば、前記問題点に鑑みて、磁気抵抗素子の小型化
に対しても高Ａ磁気抵抗効果を安定して取シ出せる半導
体磁気抵抗素子を提供するものである。In view of the above problems, the present invention provides a semiconductor magnetoresistive element that can stably achieve a high A magnetoresistive effect even when the magnetoresistive element is miniaturized.
課題を解決するための手段
そのために本発明では、複数個の短絡電極を半導体磁気
抵抗膜を形成する絶縁基板上、及び前記半導体磁気抵抗
膜上に形成したものである。また前記絶縁基板上に形成
した短絡電極の真上には。Means for Solving the Problems For this purpose, in the present invention, a plurality of shorting electrodes are formed on an insulating substrate on which a semiconductor magnetoresistive film is formed and on the semiconductor magnetoresistive film. Also, directly above the shorting electrode formed on the insulating substrate.
半導体磁気抵抗膜上に形成した短絡電極が存在しないよ
うな構造にしである。The structure is such that there is no shorting electrode formed on the semiconductor magnetoresistive film.
作用
本発明の構造では、複数個の短絡電極を、従来の構造の
物に加えて、絶縁基板上にも形成している。しかも従来
の構造での短絡電極の間にも電極が存在する事になるの
で、前述した磁気抵抗膜の長さを従来の物に比べて短く
出来る。従って、磁気抵抗効果も大きくなる。更に、絶
縁基板上の複数個の短絡電極の間隔、及び、半導体磁気
抵抗膜上の複数個の短絡ｔｒｉの間隔は従来と変わる事
は無いので、エツチングによる制約は問題にならない。Function: In the structure of the present invention, a plurality of shorting electrodes are also formed on the insulating substrate in addition to those in the conventional structure. Moreover, since electrodes are present between the short-circuit electrodes in the conventional structure, the length of the above-mentioned magnetoresistive film can be made shorter than in the conventional structure. Therefore, the magnetoresistive effect also increases. Furthermore, the spacing between the plurality of shorting electrodes on the insulating substrate and the spacing between the plurality of shorting tris on the semiconductor magnetoresistive film remain the same as in the prior art, so that restrictions due to etching do not pose a problem.
依って、素子の形状を小さくしても良好な磁気抵抗効果
を安定して得ることが出来る。以上のように１本発明の
構造にすることにょシ、素子形状を小さくしても、高い
磁気抵抗効果を安定して得る事が可能となる。Therefore, even if the shape of the element is made small, a good magnetoresistive effect can be stably obtained. As described above, by adopting the structure of the present invention, it is possible to stably obtain a high magnetoresistive effect even if the element shape is made small.
実施例 以下１本発明による一実施例を図面を用いて説明する。Example An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例【よシ作成した半導体磁気抵
抗素子の上面図である。第１図で１１は絶縁基板であり
１本実施例ではアルミナ基板を用いた。１２は半導体磁
気抵抗膜であり、Ｉｎ５ｂの蒸着膜をもちいた。１３！
５１３ｂは短絡電極である。１４は端子電極である。１
３ａ。FIG. 1 is a top view of a semiconductor magnetoresistive element prepared according to an embodiment of the present invention. In FIG. 1, reference numeral 11 denotes an insulating substrate, and in this embodiment, an alumina substrate was used. Reference numeral 12 denotes a semiconductor magnetoresistive film, and a vapor-deposited film of In5b was used. 13!
513b is a shorting electrode. 14 is a terminal electrode. 1
3a.
１３ｂ及び１４にはＣｕの蒸着膜を用いている。For 13b and 14, a deposited Cu film is used.
第２図は第１図のムー五′で切った時の断面図である。FIG. 2 is a sectional view taken along line 5' in FIG. 1.
本実施例では、半導体磁気抵抗膜２上の短絡電極１３２
Ｌは、アルミナ基板上に形成した短絡電標１３ｂ間のほ
ぼ中央上に形成した。又、短絡電極の備は約１０ミクロ
ンであり１間隔は約２０ミクロンとしている。In this embodiment, the shorting electrode 132 on the semiconductor magnetoresistive film 2
L was formed approximately at the center between the short circuit electric marks 13b formed on the alumina substrate. Further, the length of the short-circuit electrodes is about 10 microns, and the distance between them is about 20 microns.
次て、本実施例の半導体磁気抵抗素子の製造方法を第３
図に基づき説明する。まず、アルミナの総置基板１１上
１ｃｃｕを蒸着したのち、フォトリソグラフィ及びエツ
チング技術を用いてＣｕを所望のパターンに形成して短
絡電極１３ｂを設ける（第３図２Ｌ）。次にＩｎＳｂの
半導体磁気抵抗膜１２を蒸着して、更Ｋ Ｃｕ １６を
蒸着する（第３図ｂ）。Next, the method for manufacturing the semiconductor magnetoresistive element of this example will be explained in the third step.
This will be explained based on the diagram. First, 1 ccu of alumina is deposited on the total substrate 11, and then Cu is formed into a desired pattern using photolithography and etching techniques to provide short-circuit electrodes 13b (FIG. 3, 2L). Next, a semiconductor magnetoresistive film 12 of InSb is deposited, and then K Cu 16 is deposited (FIG. 3b).
次に第３図＆の工程と同様にして、Ｃｕ を所望の端
子室１１３ａ及び短絡電極１４のパターンに形成する。Next, in the same manner as in the steps shown in FIG.
最後に、フォトリソ技術及びエツチング技術を用いてＩ
ｎＳｂを所望の形状に形成して、磁気抵抗素子の製造工
程は終了する。Finally, using photolithography and etching techniques, I
The manufacturing process of the magnetoresistive element is completed by forming nSb into a desired shape.
以上が本発明による一実施例である。なお１本実施列で
は、電極材料としてＣｕを用いたが、他の材料１例えば
ムｌを用いてもよい。The above is one embodiment according to the present invention. In this embodiment, Cu was used as the electrode material, but other materials such as mulch may be used.
発明の効果
本発明の構造をとることにより、エツチング等の条件は
従来と変わる事なく、シかも、短絡電極間の距離を短く
出来るので、半導体磁気抵抗素子を高密度化したときで
も、従来の構造の物に比べて、高い磁気抵抗効果を安定
して取り出す事が可能となシ、その結果、ばらつきの少
ない素子が得られるという効果が得られる。Effects of the Invention By employing the structure of the present invention, the etching conditions and other conditions remain the same as before, and the distance between the short-circuit electrodes can be shortened. Compared to conventional structures, it is possible to stably extract a high magnetoresistive effect, and as a result, it is possible to obtain an element with less variation.
第１図は本発明の一実施例による半導体磁気抵抗素子の
上面図、第２図は第１図のム一ににおける断面図、第３
図は本発明の一実施例の製造工程を示す断面図、第４図
および第６図は従来の半導体磁気抵抗素子の上面図、第
６図は第４図のＢ −Ｂ′における断面図、第７図は従
来の半導体磁気抵抗素子の製造工程を示す断面図である
。
１１・・・・・・絶縁基板、１２・・・・・・半導体磁
気抵抗膜。
１３２Ｌ、１３ｂ・・・・・・短絡電極、１４・・・・
・・端子電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
１３図
１Ｊｂ ｌＩ ｌど
第７図
（の
（（／Ｊ
顕さ−き、−＼
一１
ＮＮＸきびく
ノーＭ
しＸｖママFIG. 1 is a top view of a semiconductor magnetoresistive element according to an embodiment of the present invention, FIG. 2 is a cross-sectional view at the corner of FIG.
The figure is a sectional view showing the manufacturing process of an embodiment of the present invention, FIGS. 4 and 6 are top views of a conventional semiconductor magnetoresistive element, and FIG. 6 is a sectional view taken along B-B' in FIG. FIG. 7 is a cross-sectional view showing the manufacturing process of a conventional semiconductor magnetoresistive element. 11... Insulating substrate, 12... Semiconductor magnetoresistive film. 132L, 13b... Short circuit electrode, 14...
...Terminal electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 13 Figure 1 Jb lI ldo Figure 7
Claims (2)
抵抗を形成し、前記短絡電極を半導体磁気抵抗を形成す
る絶縁基板上及び前記半導体磁気抵抗上に形成したこと
を特徴とする半導体磁気抵抗素子。(1) A semiconductor magnetoresistive device, characterized in that a semiconductor magnetoresistive device having a plurality of shorting electrodes is formed on an insulating substrate, and the shorting electrodes are formed on the insulating substrate forming the semiconductor magnetoresistive device and on the semiconductor magnetoresistive device. element.
体磁気抵抗上に形成した短絡電極が存在しないことを特
徴とする請求項１に記載の半導体磁気抵抗素子。(2) The semiconductor magnetoresistive element according to claim 1, wherein there is no shorting electrode formed on the semiconductor magnetoresistive material directly above the shorting electrode formed on the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63034251A JPH01208882A (en) | 1988-02-17 | 1988-02-17 | Semiconductor magnetoresistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63034251A JPH01208882A (en) | 1988-02-17 | 1988-02-17 | Semiconductor magnetoresistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01208882A true JPH01208882A (en) | 1989-08-22 |
Family
ID=12408949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63034251A Pending JPH01208882A (en) | 1988-02-17 | 1988-02-17 | Semiconductor magnetoresistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01208882A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4831698A (en) * | 1971-08-28 | 1973-04-25 | ||
| JPS517986A (en) * | 1974-07-10 | 1976-01-22 | Nippon Kokan Kk | UZURYUTANSHOSOCHINIOKERU KENSHUTSUKOIRUNO JIDOSHINDASHISOCHI |
| JPS5587496A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Magnetic resistance element |
-
1988
- 1988-02-17 JP JP63034251A patent/JPH01208882A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4831698A (en) * | 1971-08-28 | 1973-04-25 | ||
| JPS517986A (en) * | 1974-07-10 | 1976-01-22 | Nippon Kokan Kk | UZURYUTANSHOSOCHINIOKERU KENSHUTSUKOIRUNO JIDOSHINDASHISOCHI |
| JPS5587496A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Magnetic resistance element |
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