JPH01207975A - Molecular electronics device - Google Patents
Molecular electronics deviceInfo
- Publication number
- JPH01207975A JPH01207975A JP63033307A JP3330788A JPH01207975A JP H01207975 A JPH01207975 A JP H01207975A JP 63033307 A JP63033307 A JP 63033307A JP 3330788 A JP3330788 A JP 3330788A JP H01207975 A JPH01207975 A JP H01207975A
- Authority
- JP
- Japan
- Prior art keywords
- film
- elements
- polyaniline
- element isolation
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005442 molecular electronic Methods 0.000 title claims abstract description 9
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229920000767 polyaniline Polymers 0.000 abstract description 9
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- 229910052740 iodine Inorganic materials 0.000 abstract description 2
- 239000011630 iodine Substances 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000011734 sodium Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 230000007423 decrease Effects 0.000 abstract 1
- 229920001002 functional polymer Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 235000015243 ice cream Nutrition 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は複数個の機能性高分子による分子素子及び半導
体素子を一つの基板上に形成する際に必要な素子分離の
構造・構成に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the structure and configuration of device isolation necessary when forming molecular devices and semiconductor devices using a plurality of functional polymers on one substrate. It is.
［従来の技術］
従来、機能性高分子による分子素子の素子分離には、ポ
リイミド膜等の絶縁膜が用いられるのか通例てあり、又
、半導体素子の素子分離にはＳｉＯ□膜等の絶縁膜が用
いられるのか通例であった。[Prior Art] Conventionally, an insulating film such as a polyimide film has been used for element isolation of molecular devices using functional polymers, and an insulating film such as a SiO□ film has been used for element isolation of semiconductor elements. was commonly used.
［発明か解決しようとする課題］
しかし、上記従来技術によると、素子分離用絶縁膜と、
半導体基板あるいは、機能性高分子基板との境界面に、
絶縁膜の有している電荷によって誘起されるこれら基板
に誘起される電荷層か形成され、素子間リーク電流か増
大すると云う問題点かあった。[Problem to be solved by the invention] However, according to the above-mentioned conventional technology, an insulating film for element isolation,
At the interface with a semiconductor substrate or a functional polymer substrate,
There is a problem in that a charge layer is formed on the substrate, which is induced by the charge possessed by the insulating film, and leakage current between devices increases.
本発明は、かかる従来技術の問題点をなくし、素子間リ
ーク電流の無い素子分離技術を提供する事を目的とする
。It is an object of the present invention to eliminate the problems of the prior art and to provide an element isolation technique without inter-element leakage current.
［課題を解決するための手段］
上記問題点を解決するために、本発明は、分子エレクト
ロニクス装置に関し、
（１）複数の高分子機能素子を−っの基板上に形成して
成る分子エレクトロニクス装置の素子分離領域には少く
ともエレクトレット膜を形成する手段をとる車、及び、
（２）複数の半導体素子を一つの基板上に形成して成る
半導体装置の素子分離領域には少くともエレクトレット
膜を形成する手段をとる事、等である。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention relates to a molecular electronics device, and includes: (1) a molecular electronics device in which a plurality of polymeric functional elements are formed on a substrate; (2) At least an electret film is formed in the element isolation region of a semiconductor device in which a plurality of semiconductor elements are formed on a single substrate. taking measures to form such a system.
［実 施 例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す分子エレクトロニクス
装置の要部の断面図である。すなわち、ガラス等から成
る絶縁基板ｌの表面には高分子機能膜であるポリアニリ
ン２等か形成され、該ポリアニリン２には、予しめナト
リウム等がトープされ、該ナトリウム・トープ・ポリア
ニリンにヨウ素をトープしてソース５、及びトレイン６
を形成し、前記ナトリウム・トープ・ポリアニリンの表
面のケート領域にはケート絶縁膜３を形成し、該ケート
絶縁膜を介してゲート４の電極か形成等して電界効果ト
ランジスタ等を形成して高分子機能素子となし、該高分
子機能素子の素子分離領域には高分子から成るエレクト
レット膜７を形成して成る。該エレクトレット膜７は、
例えばポリイミド膜等による素子分離膜上に形成しても
良く、又、素子を多層に重ねて形成する場合には、層間
にエレクトレット膜を挟んだり、層間にポリイミド膜等
とエレクトレット膜を多層にして挟んて形成しても良い
ことは云うまてもない。鎖側の場合には電界効果トラン
ジスタてあり、素子分離不良は、ゲート下のり一の電流
増大不良として現われることとなる。FIG. 1 is a sectional view of a main part of a molecular electronics device showing one embodiment of the present invention. That is, a polymeric functional film such as polyaniline 2 is formed on the surface of an insulating substrate l made of glass or the like, the polyaniline 2 is doped with sodium or the like in advance, and the sodium-topped polyaniline is doped with iodine. and source 5, and train 6
A gate insulating film 3 is formed in the gate region on the surface of the sodium-topped polyaniline, and an electrode of a gate 4 is formed through the gate insulating film to form a field effect transistor or the like. A molecular functional element is formed, and an electret film 7 made of a polymer is formed in the element isolation region of the polymer functional element. The electret film 7 is
For example, it may be formed on an element isolation film such as a polyimide film, or when forming elements in multiple layers, an electret film may be sandwiched between the layers, or a polyimide film or the like and an electret film may be multilayered between the layers. Needless to say, they may be formed by sandwiching them. In the case of a chain side, there is a field effect transistor, and an element isolation failure appears as a current increase failure under the gate.
第２図は本発明の他の実施例を示す半導体装置の要部の
断面図である。すなわち、半導体基板１の表面には通常
の製造法により、フィールド膜２、ゲート酸化膜３、ソ
ース５及びトレイン６の拡散層及びゲート４の電極が形
成され、この場合はＭＯ３型ＦＥＴとなし、前記フィー
ルド酸化膜２の表面には高分子膜等から成るエレクトレ
ット膜７か形成されて成る。尚該エレクトレット膜７は
必すしもフィールド酸化膜２の表面に形成する必要はな
く、フィールド酸化ＩＩ！ ２をはふいて、半導体基板
ｌの素子分離領域表面に直接形成しても良い事は云うま
てもない。又、素子分離領域はＭＯＳ ＦＥＴのみな
らずバイポーラ トランジスタによるＩＣにも必要であ
り、バイポーラ トランジスタによるＩＣの素子分離に
も氷菓を適用てきる事は云うまてもなく、又、トレンチ
・マイツレ−ジョン等の深い誘電体分離領域にも氷菓か
適用てきる事も云うまでもない。本例の場合にはフィー
ルド酸化膜と半導体基板との境界面に形成される反転層
をエレクトレット膜がらの電界により消し去る事により
、素子間リーク電流を防止できる事かよく判る。FIG. 2 is a sectional view of a main part of a semiconductor device showing another embodiment of the present invention. That is, a field film 2, a gate oxide film 3, diffusion layers for a source 5 and a train 6, and an electrode for a gate 4 are formed on the surface of a semiconductor substrate 1 by a normal manufacturing method, and in this case, an MO3 type FET is formed. An electret film 7 made of a polymer film or the like is formed on the surface of the field oxide film 2. It should be noted that the electret film 7 does not necessarily have to be formed on the surface of the field oxide film 2; It goes without saying that it may be formed directly on the surface of the element isolation region of the semiconductor substrate 1 by wiping off 2. In addition, element isolation regions are necessary not only for MOS FETs but also for ICs using bipolar transistors, and it goes without saying that ice cream can also be applied to element isolation for ICs using bipolar transistors. Needless to say, ice cream can also be applied to deep dielectric isolation regions such as the like. In this example, it is clearly seen that inter-element leakage current can be prevented by erasing the inversion layer formed at the interface between the field oxide film and the semiconductor substrate by the electric field of the electret film.
［発明の効果］
本発明の如く、分子エレクトロニクス素子の集積化時の
素子間分離領域にエレクトレット膜を形成する事により
、素子間リーク電流の増大を防止てきる効果かある。[Effects of the Invention] As in the present invention, by forming an electret film in the isolation region between elements when molecular electronic elements are integrated, an increase in inter-element leakage current can be prevented.
第１図は本発明の一実施例を示す分子エレクトロニクス
装置の要部の断面図であり、第２図は本発明の他の実施
例を示す半導体装置の要部の断面図である。
１・・・・・絶縁基板
１１・・・・半導体基板
２・・・・・ポリアニリン
１２・・・・フィールド酸化膜
３．１３・・ケート絶縁膜
４．１４・・ケート
５．１５・・ソース
６．１６・・トレイン
７．１７・・エレクトレット膜
以」二
出願人 セイコーエプソン株式会社FIG. 1 is a sectional view of a main part of a molecular electronics device showing one embodiment of the present invention, and FIG. 2 is a sectional view of a main part of a semiconductor device showing another embodiment of the invention. 1... Insulating substrate 11... Semiconductor substrate 2... Polyaniline 12... Field oxide film 3.13... Kate insulating film 4.14... Kate 5.15... Source 6.16...Train 7.17...Electret membrane"2 Applicant: Seiko Epson Corporation
Claims (2)
成る分子エレクトロニクス装置の素子分離領域には少く
ともエレクトレット膜が形成されて成る事を特徴とする
分子エレクトロニクス装置。(1) A molecular electronics device comprising a plurality of polymer functional elements formed on one substrate, characterized in that at least an electret film is formed in an element isolation region.
半導体装置の素子分離領域には少くともエレクトレット
膜が形成されて成る事を特徴とする分子エレクトロニク
ス装置。(2) A molecular electronics device comprising at least an electret film formed in an element isolation region of a semiconductor device formed by forming a plurality of semiconductor elements on one substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63033307A JPH01207975A (en) | 1988-02-16 | 1988-02-16 | Molecular electronics device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63033307A JPH01207975A (en) | 1988-02-16 | 1988-02-16 | Molecular electronics device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01207975A true JPH01207975A (en) | 1989-08-21 |
Family
ID=12382899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63033307A Pending JPH01207975A (en) | 1988-02-16 | 1988-02-16 | Molecular electronics device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01207975A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677041A (en) * | 1993-03-25 | 1997-10-14 | Texas Instruments Incorporated | Integrated circuits formed in radiation sensitive material and method of forming same |
| US6246102B1 (en) * | 1990-09-28 | 2001-06-12 | Texas Instruments Incorporated | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture |
| JP2004006750A (en) * | 2002-03-27 | 2004-01-08 | Mitsubishi Chemicals Corp | Organic semiconductor material and organic electronic device |
| US8304283B2 (en) | 2002-03-27 | 2012-11-06 | Mitsubishi Chemical Corporation | Method for producing organic electronic device including converting a precursor for a semiconductor layer |
-
1988
- 1988-02-16 JP JP63033307A patent/JPH01207975A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246102B1 (en) * | 1990-09-28 | 2001-06-12 | Texas Instruments Incorporated | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture |
| US5677041A (en) * | 1993-03-25 | 1997-10-14 | Texas Instruments Incorporated | Integrated circuits formed in radiation sensitive material and method of forming same |
| US5691089A (en) * | 1993-03-25 | 1997-11-25 | Texas Instruments Incorporated | Integrated circuits formed in radiation sensitive material and method of forming same |
| US5942374A (en) * | 1993-03-25 | 1999-08-24 | Texas Instruments Incorporated | Integrated circuits formed in radiation sensitive material and method of forming same |
| JP2004006750A (en) * | 2002-03-27 | 2004-01-08 | Mitsubishi Chemicals Corp | Organic semiconductor material and organic electronic device |
| US8304283B2 (en) | 2002-03-27 | 2012-11-06 | Mitsubishi Chemical Corporation | Method for producing organic electronic device including converting a precursor for a semiconductor layer |
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