JPH01205518A - Crystal growth method - Google Patents
Crystal growth methodInfo
- Publication number
- JPH01205518A JPH01205518A JP3118488A JP3118488A JPH01205518A JP H01205518 A JPH01205518 A JP H01205518A JP 3118488 A JP3118488 A JP 3118488A JP 3118488 A JP3118488 A JP 3118488A JP H01205518 A JPH01205518 A JP H01205518A
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- heated
- raw material
- gas
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002109 crystal growth method Methods 0.000 title claims description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 20
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- -1 hydrogen compound Chemical class 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＭ Ｏ−ＣＶ Ｄ （Ｍｅｔａｌ Ｏｒｇａ
ｎｉｃ −Ｏｈｅｍｉｃａｌ ■ａｐｏｕｒ Ｄｅｐｏ
ｓｉｔｉｏｎ ）法における艮好な多層薄膜結晶の成長
方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is based on M O-CV D (Metal Organ
nic-Ochemical ■apour Depo
The present invention relates to a method for growing an elegant multilayer thin film crystal using the 3-layer method.
第４図は従来の縦型ＭＯ−ＯＶＤ装置の模式図で、図に
おいて、（１）は反応管、（２）はサセプタ、（３Ｈｄ
：？セブタ（２）上に置かれたウェハ、（４）はサセプ
タ（２）を加熱するための高周波コイル、（５）はガス
導入口である。Figure 4 is a schematic diagram of a conventional vertical MO-OVD device. In the figure, (1) is a reaction tube, (2) is a susceptor, (3Hd
:? A wafer is placed on a susceptor (2), (4) is a high frequency coil for heating the susceptor (2), and (5) is a gas inlet.
次に動作について説明する。反応材料ガス例えがアルシ
ン（ＡｓＨ３） 、フォスフイン（ＰＨ３） 、 トリ
メチルガリウム（（ＯＨ３）３Ｇａ） 、 トリメチル
インジウム（（ＯＨ３）３Ｉｎ）はキャリアガスは例え
ば水素、アルゴンにより希釈されガス導入口（５）より
反応管（１）内に導かれる。反応管（１）内においては
サセプタ（２）は高周波コイル１４）の誘導加熱により
高温に加熱され、これにしたがってサセプタ（２）上に
置かれたウエノ・（３）も高温となる。反応管（１）内
に導入された原料ガスは高温ウェハ（３）−ヒで熱分解
反応を起こし結晶が成長する。Next, the operation will be explained. For example, the reaction material gases are arsine (AsH3), phosphine (PH3), trimethylgallium ((OH3)3Ga), and trimethylindium ((OH3)3In), and the carrier gas is diluted with hydrogen or argon, for example, and is passed through the gas inlet (5). It is guided into the reaction tube (1). In the reaction tube (1), the susceptor (2) is heated to a high temperature by induction heating by the high frequency coil 14), and accordingly, the susceptor (3) placed on the susceptor (2) also becomes high temperature. The raw material gas introduced into the reaction tube (1) causes a thermal decomposition reaction on the high-temperature wafer (3) to grow crystals.
このような成長法に淀いてはウニ／％のみが加熱され反
応管（１）は加熱されない。七のため石英との反応が懸
念されるＡｌを含んだ材料の成長に適している。If such a growth method stagnates, only the sea urchin/% is heated and the reaction tube (1) is not heated. 7, it is suitable for the growth of materials containing Al, which are concerned about reactions with quartz.
従来のＭＯ−ＣＶＤ法による結晶成長装置はサセプタ６
）みが高温に保持されでいるため、第５図に示すようｌ
／ｆｉウェハ周辺のガスとカス専入口代近のガスとの間
に大きな温度差かつく。このため反応管内においてウェ
ハに近い程、ガスの密度が減少しこの密度差に起因する
浮力のため対流が発生する。したがって、反応管内へ導
入される原料ガスを変えた場合、その着換がスムーズに
行なわ凡ずエピタキシャル成長層の界面特性が劣化する
。The conventional crystal growth apparatus using MO-CVD method is susceptor 6.
) is kept at a high temperature, as shown in Figure 5.
/fi There is a large temperature difference between the gas around the wafer and the gas near the waste inlet. Therefore, the density of the gas decreases as it approaches the wafer in the reaction tube, and convection occurs due to the buoyancy caused by this density difference. Therefore, when the raw material gas introduced into the reaction tube is changed, the change is not carried out smoothly and the interface characteristics of the epitaxially grown layer are inevitably deteriorated.
この発明は上記のような課題を解消するためになされた
もので、反応管内でのガスの対流を減少させＷ、科ガス
の切換メーをスムーズにし、没好な界面特性を有するエ
ピタキシャル成長層が成長できる成長方法ヲ得ることを
目的とする。This invention was made to solve the above-mentioned problems, and it reduces the gas convection in the reaction tube, smoothes the switching of the W and S gases, and prevents the growth of an epitaxial layer with unfavorable interface characteristics. The purpose is to obtain a method of growth that is possible.
この発明にかかるＭＯＣＶＤ結晶成長力法は原料および
キャリアカスな反応管に導入する前に、原料が熱分ｗｆ
を起こさない範囲内で加熱して闘いて、その（支）反応
管内に導入するようにしたものである。In the MOCVD crystal growth method according to this invention, the raw material is heated to
The reactor is heated within a range that does not cause the reaction, and then introduced into the (sub)reaction tube.
とのりも明ておけるＭＯ−ＣＶＤ結晶成長力法は第２１
Ａ！ＩＣ示すようｖｃタセプタ付近のガスとガス導入ｒ
ｌ ｆｌ近のガスとの間の盟度差を減少させること倣よ
り、ガスの密度差を減少させて浮力をおさえて対流を減
少させ、また他にガス温度が高くなると分子運動が激［
７くなるため分子同士の衝突による熱伝導が多くなり、
対流による熱伝導の割合が減少し、対流が減少する。The 21st MO-CVD crystal growth method that can be used in a relaxed manner
A! As shown in the IC, the gas near the vc taceptor and the gas introduction r
In order to reduce the difference in density between the gas near l fl, the difference in gas density is suppressed, suppressing the buoyant force and reducing convection.In addition, when the gas temperature increases, molecular motion increases [
7, so there is more heat conduction due to collisions between molecules,
The rate of heat transfer by convection is reduced and convection is reduced.
以下、この発明の一実施例を図について説明する。第１
図において、（１）は反応管、（２）は反応管（１）内
に位置するサセプタ、（３）はサセプタ（２）上に設置
されたウェハ、（４）はサセプタ加熱用の高周波コイル
、（５）は原料およびキャリアガス導入口、（６）は加
熱用チューブ、（７）は加熱ヒータである。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a reaction tube, (2) is a susceptor located inside the reaction tube (1), (3) is a wafer placed on the susceptor (2), and (4) is a high-frequency coil for heating the susceptor. , (5) is a raw material and carrier gas inlet, (6) is a heating tube, and (7) is a heater.
次にこの発明の結晶成長力法を第］−図について四１明
する。原料およびキャリアガスばまず加熱チューブ（６
）を通ることにより加熱される。このときのガス温度に
ついては原料である有機金属や水素化合物が熱分Ｍを起
こさない程度に設定される。Next, the crystal growth force method of this invention will be explained with reference to Fig. 41. Raw material and carrier gas buzz heating tube (6
). The gas temperature at this time is set to such an extent that the organic metals and hydrogen compounds that are the raw materials do not generate heat M.
例えば、ＡＣ（）ａＩｎＰＡｒ＋系結晶においては最も
熱分解しやすいと考えられるトリメチルインジウム（Ｔ
Ｍ Ｉ）の熱分解開始温度が約３００°Ｃであるのでこ
の温度以下例えば２８０’Ｃ程度に設定する。第３図は
Ｃ０Ａ 、 ＬＡＲ８ＥＮらが雑誌Ｊｏｕｒｎａｌ ｏ
ｆ ＣｒｙＦ３ｔａｌ Ｇｒｏｗｔｈ。For example, in AC()aInPAr+ crystals, trimethylindium (T
Since the thermal decomposition starting temperature of M I) is about 300°C, the temperature is set below this temperature, for example, about 280'C. Figure 3 is published by C0A, LAR8EN and others in the magazine Journal o.
f CryF3tal Growth.
亙、１．９８６年２４７頁から２５４．頁で発表しだＴ
Ｍ Ｉの熱分解効率の温度依存性の曲線図であり、温
度が３００°Ｃ以下では熱分解が殆んど起こらないこと
がわかる。Ko, 1.986, pp. 247-254. Published on page T
It is a curve diagram of the temperature dependence of thermal decomposition efficiency of MI, and it can be seen that thermal decomposition hardly occurs at a temperature of 300°C or less.
次いで、加熱された原料およびキャリアガスは反応管ｆ
ｌｊ内に導入され、６００°Ｃから８００°Ｃに加熱さ
れたウェハ（３）トで熱分解を起こし、結晶が成長する
。Next, the heated raw material and carrier gas are transferred to the reaction tube f
The wafer (3) is introduced into the lj and heated from 600°C to 800°C, causing thermal decomposition and crystal growth.
なお、−Ｈ記実施例では縦型反応管の場合について説明
したか、横型反応管やバレル型反応管についても同様の
効果がある。In addition, although the case of the vertical reaction tube was explained in the embodiment described in -H, the same effect can be obtained also in the case of a horizontal reaction tube or a barrel-type reaction tube.
以上のようにこの発明に」これば、原料およびキャリア
ガスを一旦加熱した後、反応管内に導入し反応管内での
対流を減少させることができるだめ、良好な結晶界面を
有するエビタギシャル成長を行うことができる。As described above, according to the present invention, the raw material and carrier gas can be heated once and then introduced into the reaction tube to reduce convection within the reaction tube, thereby allowing for the evitital growth to have good crystal interfaces. Can be done.
第１図はこの発明の一実施例による結晶成長方法を示す
模式図、第２図−本と発明におけるウニ・・ト空部のガ
ス温度分布の曲線図、第３図はＣ，Ａ。
ＬＡＲ８ＥＮ他によるＴ １．４ Ｈの熱分解りＩＪ率
の温度依存性の曲線図、第４図は従来のＭＯ−ＯＶＤ装
置を示す模式図、第５図は従来例におけるウェハ上空部
のガス温度分布曲線図である。
図において、（１）は反応管、（２）はツセプタ、（３
）はウェハ、（ｌＩ）は高周波コイル、（５）はガス導
入口、（６）は加熱用チューブ、（７）は加熱ヒータで
ある。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a schematic diagram showing a crystal growth method according to an embodiment of the present invention, FIG. 2 is a curve diagram of the gas temperature distribution in the sea urchin cavity according to the present invention and the present invention, and FIG. 3 is a diagram showing C and A. A curve diagram of the temperature dependence of the thermal decomposition IJ rate of T 1.4 H by LAR8EN et al., Figure 4 is a schematic diagram showing a conventional MO-OVD apparatus, and Figure 5 is the gas temperature above the wafer in the conventional example. It is a distribution curve diagram. In the figure, (1) is a reaction tube, (2) is a tsepta, and (3) is a reaction tube.
) is a wafer, (lI) is a high-frequency coil, (5) is a gas inlet, (6) is a heating tube, and (7) is a heater. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
スを反応管導入前に原料が熱分解を起こさないかまたは
熱分解を起こしても結晶成長において問題のない程度ま
でに加熱して、その後に反応管内に導入することを特徴
とする結晶成長方法。(1) In the MO-CVD method, the raw materials and carrier gas are heated before being introduced into the reaction tube to such an extent that the raw materials do not undergo thermal decomposition, or even if thermal decomposition occurs, there is no problem with crystal growth, and then the reaction takes place. A crystal growth method characterized by introducing the crystal into a tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118488A JPH01205518A (en) | 1988-02-12 | 1988-02-12 | Crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118488A JPH01205518A (en) | 1988-02-12 | 1988-02-12 | Crystal growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01205518A true JPH01205518A (en) | 1989-08-17 |
Family
ID=12324357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3118488A Pending JPH01205518A (en) | 1988-02-12 | 1988-02-12 | Crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01205518A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005252248A (en) * | 2004-02-05 | 2005-09-15 | Nokodai Tlo Kk | Method for growing aluminum nitride epitaxial layer and vapor growth apparatus |
| JP2010265178A (en) * | 2004-02-05 | 2010-11-25 | Nokodai Tlo Kk | Vapor growth apparatus for epitaxial layer |
-
1988
- 1988-02-12 JP JP3118488A patent/JPH01205518A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005252248A (en) * | 2004-02-05 | 2005-09-15 | Nokodai Tlo Kk | Method for growing aluminum nitride epitaxial layer and vapor growth apparatus |
| JP2010265178A (en) * | 2004-02-05 | 2010-11-25 | Nokodai Tlo Kk | Vapor growth apparatus for epitaxial layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4421592A (en) | Plasma enhanced deposition of semiconductors | |
| JPH01205518A (en) | Crystal growth method | |
| JPH0754806B2 (en) | Method for growing compound semiconductor single crystal film | |
| US4609424A (en) | Plasma enhanced deposition of semiconductors | |
| JPS54106081A (en) | Growth method in vapor phase | |
| JP2753832B2 (en) | III-V Vapor Phase Growth of Group V Compound Semiconductor | |
| JPH0697656B2 (en) | Vapor phase epitaxial growth method | |
| JPS58223695A (en) | Device for vapor-phase epitaxial growth | |
| JPS58140391A (en) | Device for vapor deposition | |
| JPS59169123A (en) | Epitaxial growth of compound semiconductor | |
| JPS6081092A (en) | Vapor growth method for thin film of compound semiconductor | |
| JPS6131393A (en) | Vapor phase growth device | |
| JPS58125698A (en) | Device for growing crystal | |
| JPH0369879B2 (en) | ||
| JPH0559080B2 (en) | ||
| JPS61176111A (en) | Manufacture of compound semiconductor thin film | |
| JPS60113420A (en) | Device for manufacturing semiconductor crystal | |
| JPS63266816A (en) | Growing method for iii-v compound semiconductor crystal | |
| JPS63228713A (en) | Vapor growth method | |
| JPS6163598A (en) | Vapor growth process | |
| JPS54139467A (en) | Method and apparatus for vapor epitaxial growth | |
| JPS6131394A (en) | Vapor phase growth process | |
| JPS61114521A (en) | Method of crystal growth of semiconductor | |
| JPH0451520B2 (en) | ||
| JPS62197393A (en) | Liquid-phase epitaxial growth method |