JPH01205077A - Method for depositing thin film by photochemical vapor growth - Google Patents
Method for depositing thin film by photochemical vapor growthInfo
- Publication number
- JPH01205077A JPH01205077A JP2813588A JP2813588A JPH01205077A JP H01205077 A JPH01205077 A JP H01205077A JP 2813588 A JP2813588 A JP 2813588A JP 2813588 A JP2813588 A JP 2813588A JP H01205077 A JPH01205077 A JP H01205077A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- light
- reaction vessel
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 10
- 238000000151 deposition Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000007736 thin film deposition technique Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 16
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000007858 starting material Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 30
- 230000002265 prevention Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010011906 Death Diseases 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜を堆積する光化学気相成長法（以下、光Ｃ
ＶＤ法と略称する）に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention utilizes a photochemical vapor deposition method (hereinafter referred to as a photochemical vapor deposition method) for depositing a thin film.
(abbreviated as VD method).
［従来の技術］
従来、光ＣＶＤ法に用いられる光化学気相成長装置（以
下、光ＣＶＩ）装置と略称する）は、一般に、反応容器
と、該反応容器内に原料ガスを導入する手段と該反応容
器内に光透過窓くもり防止用ガスを導入する手段と、該
ガスに高エネルギー光を照射する手段とを備えており、
光化学反応を利用して該反応容器内に設けられた基体上
に所望の堆積膜を形成するものである。[Prior Art] Conventionally, a photochemical vapor deposition apparatus (hereinafter referred to as a photoCVI apparatus) used in the photoCVD method generally includes a reaction vessel, a means for introducing a source gas into the reaction vessel, and a means for introducing a source gas into the reaction vessel. It is equipped with a means for introducing a gas for preventing fogging of a light-transmitting window into the reaction container, and a means for irradiating the gas with high-energy light,
A desired deposited film is formed on a substrate provided in the reaction vessel using a photochemical reaction.
すなわち、従来、光ＣＶＤ法は、代表的な光ＣＶＤ装置
の原理構成図を第２図として示したように、光透過窓く
もり防止用ガスを吹きつけた光透過窓２を介して反応容
器１内に導入される高エネルギー光３を利用して、当該
容器ｌ内に導入された原料ガスを励起し基体加熱用ヒー
タｌＯで所望の温度に加熱された基体９上に堆積膜１１
を形成するのが一般的である。なお、第２図において、
４は原料ガス導入口、５は光透過窓くもり防止用ガス導
入口、６．７はバルブ、８はガス排気口。That is, in the conventional photo-CVD method, as shown in FIG. 2, which shows the basic configuration diagram of a typical photo-CVD apparatus, a reaction vessel 1 is passed through a light-transmitting window 2 onto which a gas for preventing fogging of the light-transmitting window is blown. The raw material gas introduced into the container L is excited using the high-energy light 3 introduced into the container L, and the deposited film 11 is deposited on the substrate 9 heated to a desired temperature by the substrate heating heater IO.
It is common to form In addition, in Figure 2,
4 is a raw material gas inlet, 5 is a gas inlet for preventing fogging of the light transmission window, 6.7 is a valve, and 8 is a gas exhaust port.
９は基体を示している。9 indicates the base body.
例えば、ジシランガスを反応容器ｌに導入し、エキシマ
レーザ−等の高エネルギー光３を照射し、基体９上に水
素化シリコン膜を形成する方法等が知られている。For example, a method is known in which disilane gas is introduced into a reaction vessel 1, and high-energy light 3 such as an excimer laser is irradiated to form a hydrogenated silicon film on the substrate 9.
しかしながら、上記従来例では基体が加熱されている場
合、窓くもり防止用のガスの温度が基体の温度よりも低
いのが通常である。そのためガスが加熱された基体上の
膜表面に衝突すると、堆積膜表面温度が低下し、基体上
に成長する膜の膜質、すなわち緻密性乃至結晶性等が悪
化するという問題点があった。However, in the conventional example described above, when the base is heated, the temperature of the gas for preventing window fogging is usually lower than the temperature of the base. Therefore, when the gas collides with the surface of the film on the heated substrate, the surface temperature of the deposited film decreases, causing a problem in that the quality of the film grown on the substrate, ie, the density, crystallinity, etc., deteriorates.
［発明が解決しようとする問題点］
本発明は、以上説１５１ した従来技術の問題点を解決
し、反応容器に導入する窓くもり防止用ガスを加熱する
ことにより、従来問題となっていた基体表面温度の低下
を減少させ、膜質の悪化を防止する光化学気相成長法に
よる薄膜堆積方法を提供するものである。[Problems to be Solved by the Invention] The present invention solves the problems of the prior art described above and solves the problems of the conventional substrate by heating the window fog prevention gas introduced into the reaction vessel. The present invention provides a thin film deposition method using photochemical vapor deposition, which reduces the decrease in surface temperature and prevents deterioration of film quality.
［問題点を解決するための手段］
本発明は、光透過窓を有する反応容器内に、当該光透過
窓のくもり防止用ガスを導入し、かつ当該反応容器内に
薄膜形成のための原料ガスを導入し、その後前記光透過
窓を介して高エネルギー光を照射して前記原料ガスを励
起させ、前記反応容器内に設置された基体上に薄１１Ｑ
を堆積させる光化学気相ｒ＆長法による薄膜堆積方法に
おいて、前記光透過窓のくもり防止用ガスを前記反応容
器内に導入するに際して、占該くもり防止用ガスを加熱
することを特徴とする光化学気相成長法によるドル膜堆
積方法に要旨が存在する。[Means for Solving the Problems] The present invention introduces a gas for preventing fogging of the light-transmitting window into a reaction vessel having a light-transmitting window, and also introduces a raw material gas for forming a thin film into the reaction vessel. is introduced, and then high-energy light is irradiated through the light transmission window to excite the raw material gas, and a thin 11Q
In the thin film deposition method using the photochemical vapor phase r&long method for depositing a photochemical vapor, the anti-fogging gas is heated when the gas for preventing fogging of the light transmission window is introduced into the reaction vessel. There is a gist in the dollar film deposition method using the phase growth method.
［実施例］ 実施例１ 以下に実施例を挙げて本発明を具体的に説ＩＩする。[Example] Example 1 The present invention will be specifically explained below by giving examples.
第１図に示される装ごを用いて光ＣＶＤ法による薄膜を
堆積した。光透過窓くもり防止用ガスを加熱ヒータ１２
で加熱して、光透過窓２に吹きつけ、高エネルギー光３
を光透過窓２を介して反応容器１に導入し、基体加熱ヒ
ータ１０により所９！の温度に加熱された基体９上に塩
ｍ膜１１を形成した。A thin film was deposited by photo-CVD using the apparatus shown in FIG. Heater 12 heats the gas for preventing fogging of the light transmitting window.
high-energy light 3.
is introduced into the reaction vessel 1 through the light-transmitting window 2, and heated at 9! by the substrate heater 10. A salt m film 11 was formed on the substrate 9 which was heated to a temperature of .
第３図は、第１図の装置を用いて、原料ガスにジシラン
（５０ｓｅｃｍ）、窓くもり防止用ガスにアルゴン（３
００ｓｅｃｍ）を用い、基体９の温度を２００℃、圧力
ｔ”ｒｏｒｒ、光照度１０ｍ Ｗ ／ ｃ ｒｎ’ （
波長１８５ｎｍ）とし、光透過窓くもり防止用ガスを加
熱しない場合と、５０〜３００℃に加熱した場合とにお
ける堆積したシリコン膜の密度を表わしたグラフである
。第３図より明らかなように、窓くもり防止用ガスの加
熱温度が高くなるに従い、膜の密度は増大し、緻密性は
向上していた。Figure 3 shows disilane (50 sec) as the raw material gas and argon (3 sec) as the window fog prevention gas using the apparatus shown in Figure 1.
00 sec), the temperature of the substrate 9 was 200°C, the pressure was t"rorr, and the light intensity was 10m W/crn' (
18 is a graph showing the density of the deposited silicon film when the light transmitting window fog prevention gas is not heated and when it is heated to 50 to 300°C. As is clear from FIG. 3, as the heating temperature of the window fog prevention gas increased, the density of the film increased and the compactness improved.
実施例２
第１図の９置を使用し、基体温度を６００℃とし、他の
条件は実施例１と同じにして、光透過窓くもり防】Ｉ：
、用ガスを加熱しない編合と、５０〜４００℃に加熱し
た場合とにおける薄膜を堆積した。第４図は堆積したシ
リコン膜の結晶粒径を表わしたグラフである。第４図か
ら明らかなように、窓くもり防止用ガス加熱温度が高く
なるに従い、結晶粒径は大きくなり、結晶性は向上して
いた。また、股の緻密性も良好であった。Example 2 Using the 9th position shown in Fig. 1, setting the substrate temperature to 600°C, and keeping the other conditions the same as in Example 1, anti-fogging of the light transmission window] I:
, thin films were deposited in the case where the gas was not heated and in the case where the gas was heated to 50 to 400°C. FIG. 4 is a graph showing the crystal grain size of the deposited silicon film. As is clear from FIG. 4, as the window fog prevention gas heating temperature increased, the crystal grain size increased and the crystallinity improved. Moreover, the denseness of the crotch was also good.
なお、末完ＩＪＩＩにおいては窓くもり防止用ガスの加
熱に加え、反応容器の壁面を加熱すればより効果的であ
る。In addition, in Seikan IJII, it is more effective to heat the wall surface of the reaction vessel in addition to heating the gas for preventing window fogging.
［発明の効果］
以上説明したように末完ＩＪＩによれば堆積膜の膜品質
、すなわち緻密性乃至結晶性を向上させることができる
。[Effects of the Invention] As explained above, the final IJI can improve the film quality of the deposited film, that is, the denseness or crystallinity.
第１図は末完りＪの実施例に用いる装置であり、第２図
は従来の光ＣＶＤ法に用いる装置である。
第３図は実施例１により得られた薄膜のｊ＆密性を示す
グラフであり、第４図は実施例２により得られた薄膜の
結晶性を示すグラフである。
ｌ・・・反応容器、２・・・光透過窓、３・・・高エネ
ルギー光、４・・・原料ガス導入口、５・・・光透過窓
くもり防止用ガス導入口、６．７・・・バルブ、８・・
・ガス排気口、９・・・基体、１０・・・基体加熱用ヒ
ータ、１１・・・堆積膜、１２・・・加熱ヒータ。
結晶粒径Ｉ入〕FIG. 1 shows an apparatus used in the example of the end-of-life process, and FIG. 2 shows an apparatus used in the conventional optical CVD method. FIG. 3 is a graph showing the j&density of the thin film obtained in Example 1, and FIG. 4 is a graph showing the crystallinity of the thin film obtained in Example 2. l... Reaction container, 2... Light transmission window, 3... High energy light, 4... Raw material gas inlet, 5... Gas inlet for preventing fogging of light transmission window, 6.7. ...Valve, 8...
- Gas exhaust port, 9... Substrate, 10... Heater for heating the substrate, 11... Deposited film, 12... Heater. Crystal grain size I included]
Claims (1)
防止用ガスを導入し、かつ当該反応容器内に薄膜形成の
ための原料ガスを導入し、その後前記光透過窓を介して
高エネルギー光を照射して前記原料ガスを励起させ、前
記反応容器内に設置された基体上に薄膜を堆積させる光
化学気相成長法による薄膜堆積方法において、前記光透
過窓のくもり防止用ガスを前記反応容器内に導入するに
際して、当該くもり防止用ガスを加熱することを特徴と
する光化学気相成長法による薄膜堆積方法。A gas for preventing fogging of the light-transmitting window is introduced into a reaction vessel having a light-transmitting window, a raw material gas for forming a thin film is introduced into the reaction vessel, and then a high-energy gas is introduced through the light-transmitting window. In a thin film deposition method using photochemical vapor deposition, in which the raw material gas is excited by irradiation with light and a thin film is deposited on a substrate placed in the reaction vessel, the anti-fogging gas in the light transmission window is excited by the reaction vessel. A method for depositing a thin film by photochemical vapor deposition, characterized in that the antifogging gas is heated before being introduced into a container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2813588A JPH01205077A (en) | 1988-02-09 | 1988-02-09 | Method for depositing thin film by photochemical vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2813588A JPH01205077A (en) | 1988-02-09 | 1988-02-09 | Method for depositing thin film by photochemical vapor growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01205077A true JPH01205077A (en) | 1989-08-17 |
Family
ID=12240326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2813588A Pending JPH01205077A (en) | 1988-02-09 | 1988-02-09 | Method for depositing thin film by photochemical vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01205077A (en) |
-
1988
- 1988-02-09 JP JP2813588A patent/JPH01205077A/en active Pending
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