JPH01204478A - Wiring method for semiconductor pressure sensor element - Google Patents
Wiring method for semiconductor pressure sensor elementInfo
- Publication number
- JPH01204478A JPH01204478A JP2852188A JP2852188A JPH01204478A JP H01204478 A JPH01204478 A JP H01204478A JP 2852188 A JP2852188 A JP 2852188A JP 2852188 A JP2852188 A JP 2852188A JP H01204478 A JPH01204478 A JP H01204478A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- metal film
- electrode
- film
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 238000001514 detection method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 28
- 150000002739 metals Chemical class 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体基板に形成された拡散抵抗の抵抗値が
半導体基板の歪みにともなって変化するのを同一の半導
体基板上に形成した信号処理部で検出増幅して同じく同
一の半導体基板上に形成した電極部を介して外部に出力
させる一体形半導体圧カセンサ素子の配線方法に関する
。[Detailed Description of the Invention] [Industrial Application Field] This invention is a signal processing method in which the resistance value of a diffused resistor formed on a semiconductor substrate changes with the distortion of the semiconductor substrate. The present invention relates to a wiring method for an integrated semiconductor pressure sensor element in which detection is amplified in a part and output to the outside via an electrode part formed on the same semiconductor substrate.
半導体基板の表面に拡散抵抗を形成した圧力検出部と、
その拡散抵抗の抵抗値の変化を検出し増幅する信号処理
部と、その信号処理部の出力を外部へ取り出すための端
子となる電極部とを一体に形成し、圧力検出部の裏面に
凹部を設けてその部分の厚みを薄くし感圧ダイアフラム
として、小形化、低コスト化、高性能化をはかったもの
が一体形牛導体圧カセンサ素子とし【一般的に知られて
いる。A pressure detection unit with a diffused resistance formed on the surface of a semiconductor substrate;
A signal processing section that detects and amplifies changes in the resistance value of the diffused resistor and an electrode section that serves as a terminal for taking out the output of the signal processing section to the outside are integrally formed, and a recess is formed on the back surface of the pressure detection section. A pressure-sensitive diaphragm is created by reducing the thickness of that part and making it smaller, lower cost, and higher performance, which is commonly known as an integrated conductor pressure sensor element.
この種の一体形半導体圧カセンサ素子の製作工程を第３
図の断面図で示す。The manufacturing process for this type of integrated semiconductor pressure sensor element is the third step.
Shown in cross-section in the figure.
第３図（ａ）は配線工程の直前の状態を示したものであ
る。ｐ型シリコン基板１上に圧力検出部２゜信号処理部
３のそれぞれに対応して作られた計型埋込層４，５の上
にエピタキシャル成長によってｎ型エビ層６を設けた半
導体基板７０表面には、ｐ型拡散抵抗８を形成した圧力
検出＠２と、ｐ型４−ス層９の上にｎ型エミツタ層１０
を形成したトランジスタを主体とする信号処理部３がそ
れぞれｐ型分離層１１を介して形成されている。これら
の圧力検出部２と信号処理部３の上にはさらに二酸化シ
リコンの絶縁膜１２が形成され、圧力検出部２の拡散抵
抗８の接続点、信号処理部のトランジスタのベース、エ
ミッタ、コレクタなどに対応する箇所には、フォトリソ
グラフィによる穴１３があげられている。FIG. 3(a) shows the state immediately before the wiring process. The surface of a semiconductor substrate 70 has an n-type shrimp layer 6 formed by epitaxial growth on the meter-shaped buried layers 4 and 5 formed on the p-type silicon substrate 1 corresponding to the pressure detection section 2 and the signal processing section 3, respectively. , there is a pressure detection @2 with a p-type diffused resistor 8 formed thereon, and an n-type emitter layer 10 on the p-type fourth layer 9.
A signal processing section 3 mainly consisting of a transistor formed with a p-type isolation layer 11 is formed therebetween. A silicon dioxide insulating film 12 is further formed on the pressure detecting section 2 and the signal processing section 3, and serves as the connection point of the diffused resistor 8 of the pressure detecting section 2, the base, emitter, collector, etc. of the transistor of the signal processing section. A hole 13 formed by photolithography is shown at a location corresponding to .
（ｂ）は配線工程を終了した直後の状態で、この配線工
程においては圧力検出部配線１４．信号処理部配線１５
．および電極部１６の電極１７を、絶縁膜１２上にアル
ミニウムを蒸着して金属膜を形成させ・、その後フォト
リングラフィによってそれぞれを所要の形状に同時に仕
上げる。(b) shows the state immediately after the wiring process is completed, and in this wiring process, the pressure detection unit wiring 14. Signal processing section wiring 15
．． For the electrodes 17 of the electrode section 16, a metal film is formed by vapor depositing aluminum on the insulating film 12, and then each is simultaneously finished into a desired shape by photolithography.
（Ｃ）は一体形半導体圧力センサ素子１８として完成さ
せた状態である。絶縁膜１２．圧カ検出部配線１４．信
号処理部配線１５．電極１７を保護膜１９で覆い、７オ
トリソグラフイにより電極１７０部分のみに穴２０をあ
げ、さらに圧力検出部２の裏面のｐ型シリコン基板１に
対してエツチングで凹部２１を設け、その部分の厚みを
１０ないし１００μｍ程度に薄くして感圧膜２２を形成
する。(C) shows the completed integrated semiconductor pressure sensor element 18. Insulating film 12. Pressure detection part wiring 14. Signal processing section wiring 15. The electrode 17 is covered with a protective film 19, and a hole 20 is formed only in the electrode 170 portion using 7 otolithography. Furthermore, a recess 21 is formed by etching on the p-type silicon substrate 1 on the back surface of the pressure sensing portion 2, and the hole 20 is formed in the p-type silicon substrate 1 on the back surface of the pressure sensing portion 2. The pressure sensitive film 22 is formed by reducing the thickness to about 10 to 100 μm.
第３図に示す製作工程においては、圧力検出部配線１４
．信号処理部配線１５．電極１７を同時に形成するため
これら配線を構成する金属膜はいずれも同一の厚みを与
えられる。In the manufacturing process shown in FIG.
．． Signal processing section wiring 15. Since the electrodes 17 are formed at the same time, the metal films constituting these wirings are all given the same thickness.
しかしながら圧力検出部２は前述のように厚みが１０な
いし１００μｍと薄い感圧膜２２の上に作られるため、
半導体基板７であるシリコンと金属膜配線のアルミニウ
ムとの熱膨張係数の差異によって両者の境界面に発生す
る応力が半導体の圧力センサの特性に太き（影響し、温
度変化に対する出力特性を不安定とすることが一般に知
られている。このため圧力検出部配線１４は上記の問題
を避けるため膜厚を極力薄（することが要求される。However, since the pressure detection unit 2 is formed on the pressure sensitive film 22, which is as thin as 10 to 100 μm in thickness, as described above,
The stress generated at the interface between silicon, which is the semiconductor substrate 7, and aluminum, which is the metal film wiring, increases the characteristics of the semiconductor pressure sensor, making the output characteristics unstable with respect to temperature changes. It is generally known that the pressure detection section wiring 14 is therefore required to be as thin as possible in order to avoid the above-mentioned problems.
一方電極１７は圧力センサの組立工程において一体形半
導体圧カセンサ素子１８と外部回路とを接続するために
施すワイアボンディングに対して強度を確保し、信頼性
を向上させる必要上少な（とも１μｍ程度の厚みが要求
される。On the other hand, the electrode 17 has a wire bonding strength of about 1 μm (approximately 1 μm) to ensure strength and improve reliability for the wire bonding performed to connect the integrated semiconductor pressure sensor element 18 and an external circuit in the pressure sensor assembly process. Thickness is required.
このように圧力検出部配線１４と電極１７との金属膜の
膜厚に関しては相反する要求があるにもかかわらず、こ
れらを同一の厚みで形成しているため、温度変化に対す
る出力特性が良好でないことと組立工程におけるボンデ
ィングの不良とそれぞれにかかわる問題を生じ、信頼性
を損ねていた。Although there are conflicting requirements regarding the thickness of the metal film of the pressure detection part wiring 14 and the electrode 17, since these are formed with the same thickness, the output characteristics against temperature changes are not good. Problems related to this and defective bonding during the assembly process occurred, impairing reliability.
この発明は上記の問題点を解決し、圧力検出部の金属膜
の配線の厚みを電極部の金属膜の配線よりも薄く形成さ
せる。ことにより、信頼性の高い一体形半導体圧カセン
サ素子の配線方法を提供することを目的とする。The present invention solves the above-mentioned problems by forming the metal film wiring of the pressure detection part thinner than the metal film wiring of the electrode part. Accordingly, it is an object of the present invention to provide a highly reliable wiring method for an integrated semiconductor pressure sensor element.
この発明は、次の二つの手段のいずれかにより上述の目
的を達成するものである。This invention achieves the above object by either of the following two means.
すなわち、第１の配線方法は、同一の半導体基板表面に
拡散抵抗を形成した圧力検出部と、その拡散抵抗の抵抗
変化を検出増幅する信号処理部と外部回路への接続端子
となる電極部を形成し、前記の圧力検出部の裏面に凹部
を設けて厚みの薄い感圧膜を一体に形成した半導体圧力
センサ素子の配線方法であって、 第
１の金属膜の配線の施される圧力検出部よりなる第１の
領域と第２の金属膜め配線の施される信号処理部および
電極部よりなる第２の領域の二つの領域のうちの一方の
領域に先ず所定の厚みの金属膜の配線を施し、その上に
保護用の被膜を設け、次いで他方の領域に前記の一方の
領域の金属膜の配線とは異なる所定の厚みの金属膜の配
線を施し、前記の被膜を除去するものである。That is, the first wiring method includes a pressure detection section in which a diffused resistor is formed on the surface of the same semiconductor substrate, a signal processing section that detects and amplifies the resistance change of the diffused resistor, and an electrode section that serves as a connection terminal to an external circuit. A method for wiring a semiconductor pressure sensor element in which a thin pressure sensitive film is integrally formed with a concave portion provided on the back surface of the pressure sensing portion, the pressure sensing device having a first metal film wiring. First, a metal film of a predetermined thickness is coated on one of the two regions, a first region consisting of a signal processing section and an electrode section on which wiring is applied. Wiring is applied, a protective film is provided on the wiring, then metal film wiring with a predetermined thickness different from the metal film wiring in one area is applied to the other area, and the film is removed. It is.
第２の配豚方法は、圧力検出部と信号処理部と電極部と
に対して圧力検出部に必要とされる厚みの第１の金属膜
の配線を施し、その上に半導体基板表面全体にわたって
保護膜を設けた後に電極部上の保護膜を除去し、電極部
の第１の金属膜の配線上に所定の厚みに第２の金属膜を
重ねて電極部の電極を形成するものである。In the second pig distribution method, a first metal film wiring having a thickness required for the pressure detection part is applied to the pressure detection part, the signal processing part, and the electrode part, and then the first metal film is wired over the entire surface of the semiconductor substrate. After the protective film is provided, the protective film on the electrode part is removed, and a second metal film is overlaid to a predetermined thickness on the wiring of the first metal film of the electrode part to form the electrode of the electrode part. .
第１の配線方法において第１の金属膜の配線の施される
圧力検出部よりなる第１の領域と第２の金属膜の配線の
施される信号処理部および電極部よりなる第２の領域の
二つの領域のうちの一方の領域に先ず所定の厚みの金属
膜の配線を施し、その上に保護用の被膜を設けるように
すれば、その領域は他方の領域から隔離されるので、他
方の領域には第１の領域の金属膜の配線とは異なる厚み
の配線を施すことが可能となる。したがって他方の領域
にも所定の金属膜の配線を施した後に前記の被膜を除（
ことによって、圧力検出部には信号処理部や電極部の金
属膜配線より淳みの薄い金属膜の配線を施すことができ
、しかもそれらの金属の種類を異ならせることも可能と
なる。In the first wiring method, a first region comprising a pressure detection section to which a first metal film wiring is applied, and a second region comprising a signal processing section and an electrode section to which a second metal film wiring is applied. If one of the two areas is first wired with a metal film of a predetermined thickness and then a protective film is provided on top of it, that area will be isolated from the other area, and the other area will be isolated from the other area. It becomes possible to provide wiring having a thickness different from that of the metal film wiring in the first region in the region. Therefore, after applying a predetermined metal film wiring to the other area, the above film is removed (
As a result, the pressure detection section can be provided with metal film wiring that is thinner than the metal film wiring of the signal processing section and the electrode section, and it is also possible to use different types of metals.
また第２の配線方法においては圧力検出部と信号処理部
と電極部とに圧力検出部の必要とされる厚みの第１の金
属膜の配線を施すとこれらの配線は薄い金属膜で構成さ
れる。しかしその上に半導体基板全体にわたって保護膜
を設けた後に電極部上の保護膜を除去し、電極部の第１
０金稿膜の配線に重ねて所定の厚みに第２の金属膜を蒸
着して電極部の電極を形成するので、電極部の金属膜の
膜厚を必要な程度に厚くすることができる。この方法に
おいても圧力検出部と電極部の金属膜の種類を異ならせ
ることが可能である。In addition, in the second wiring method, if the pressure detection part, the signal processing part, and the electrode part are wired with the first metal film having the thickness required for the pressure detection part, these wirings are made of a thin metal film. Ru. However, after a protective film is provided over the entire semiconductor substrate, the protective film on the electrode part is removed, and the first part of the electrode part is removed.
Since the electrode of the electrode part is formed by depositing the second metal film to a predetermined thickness over the wiring of the zero-metal film, the thickness of the metal film of the electrode part can be made as thick as necessary. In this method as well, it is possible to use different types of metal films for the pressure detection section and the electrode section.
第１図はこの発明による第１の配線方法の実施例を主体
とした製作工程を示す断面図である。FIG. 1 is a sectional view showing a manufacturing process mainly based on an embodiment of the first wiring method according to the present invention.
第１図（ａ）は配線工程の直前の状態を示したものであ
って、半導体基板７は第３図（ａ）に示したものと全（
同一である。FIG. 1(a) shows the state immediately before the wiring process, and the semiconductor substrate 7 is the same as that shown in FIG. 3(a).
are the same.
次に（ｂ） Ｋ示すよ５沈圧力検出部２からなる第１の
領域３１に、たとえはアルミニウムのような材質の第１
の金属膜３２を圧力検出部２における所定の厚みすなわ
ち約０．３ないし０．８μｍの厚みに膜付けし、フォト
リソグラフィにより圧力検出部配線３３を形成させる。Next, as shown in (b) K, a first region 31 made of a material such as aluminum is inserted into the first region 31 consisting of the sinking force detection section 2.
A metal film 32 is deposited on the pressure detection section 2 to a predetermined thickness, that is, approximately 0.3 to 0.8 μm, and a pressure detection section wiring 33 is formed by photolithography.
引き続き（Ｃ） Ｋ示すように圧力検出部配線３３も含
めて半導体基板７の上に、ＣＶＤ技術によりたとえばシ
リコン窒化膜のような保護用の被膜を施した後に、第２
Ω領域３５である信号処理部３と電極部１６の被膜を除
去して、第１の領域３１である圧力検出部２の上のみ前
記の被膜を被膜３４として残す。シリコン窒化膜は金属
膜のフォ） ＩＪソグラフィに用いられるふっ酸系とり
ん硝酸系の処理液に対して耐エツチング性が高い被膜で
ある。Continuing (C) As shown in K, after applying a protective film such as a silicon nitride film on the semiconductor substrate 7 including the pressure detection part wiring 33 by CVD technology, a second film is applied.
The coatings on the signal processing section 3 and the electrode section 16, which are the Ω region 35, are removed, and the coating is left as the coating 34 only on the pressure detection section 2, which is the first region 31. The silicon nitride film is a metal film that has high etching resistance against hydrofluoric acid and phosphorous nitric acid processing solutions used in IJ lithography.
次に（ｄ）のよ５に第２の金属膜３６を厚み約１．０な
いし１．５μｍに膜付けし、フォトリソグラフィによっ
て第２の領域３５である信号処理部３と電極部１６とに
信号処理部配線３７と電極３８とを形作る。第２の金属
膜３６は圧力検出部配線３３に用いた第１の金属膜３２
と同一材質であってもよく、また異なる材質であっても
よい。この後圧力検出部２の被膜３４を除去して（ｅ）
に示すように配線工程を完了する。さらに（ｆ）に示す
ように半導体基板７の配線を施した表面に保護膜３９を
膜付けし、フォトリソグラフィによって電極部１６に穴
４０をあけて電極３８の金属膜面な露出させる。Next, as shown in FIG. 5(d), a second metal film 36 is deposited to a thickness of about 1.0 to 1.5 μm, and the signal processing section 3 and the electrode section 16, which are the second region 35, are formed by photolithography. The signal processing section wiring 37 and electrodes 38 are formed. The second metal film 36 is the same as the first metal film 32 used for the pressure detection section wiring 33.
It may be made of the same material as or may be made of a different material. After that, the coating 34 of the pressure detection part 2 is removed (e)
The wiring process is completed as shown in . Furthermore, as shown in (f), a protective film 39 is applied to the surface of the semiconductor substrate 7 on which the wiring is applied, and a hole 40 is made in the electrode portion 16 by photolithography to expose the metal film surface of the electrode 38.
さらに半導体基板７の裏面に凹部２１を設けて感圧膜２
２を形成し、一体形半導体圧力センサ素子４１とする。Further, a concave portion 21 is provided on the back surface of the semiconductor substrate 7, and the pressure sensitive film 2 is
2 to form an integrated semiconductor pressure sensor element 41.
このようにして圧力検出部２には厚み０．３ないし０．
８μｍの薄い第１の金属膜３２の配線が、また信号処理
部３と電極部１６とには厚み１．０ないし１．５μｍの
厚い第２の金属膜３６の配線が施されるので、圧力検出
部２においては圧力検出部配線３３の金属と半導体基板
７のシリコンとの熱膨張係数の差異によって両者の境界
に発生する応力を低い値に抑えることができ、また電極
３８にはワイアポンディングを行５のに十分な強度を与
えることが可能となる。In this way, the pressure detection part 2 has a thickness of 0.3 to 0.
Since the first metal film 32 is wired as thin as 8 μm, and the second metal film 36 is wired as thick as 1.0 to 1.5 μm in thickness between the signal processing section 3 and the electrode section 16. In the detection unit 2, the stress generated at the boundary between the metal of the pressure detection unit wiring 33 and the silicon of the semiconductor substrate 7 can be suppressed to a low value due to the difference in thermal expansion coefficient between the metal of the pressure detection unit wiring 33 and the silicon of the semiconductor substrate 7, and the electrode 38 has wire bonding. This makes it possible to provide sufficient strength to row 5.
また第１の領域３１と第２の領域３５とをそれぞれ分離
して配線が行なえるため、前に記したようにそれぞれの
領域での金属膜の材質を異ならせることができる。たと
えば圧力検出部２を形成する第１の領域３１の第１の金
属膜３２の圧力検出部配線３３をシリコンと熱膨張係数
の値が近いモリブデンなどで形成し、信号処理部３と電
極部１６からなる第２の領域３５の第２ｖ′）金属膜３
６からなる信号処理部配線３７と電極３８とは通常のア
ルミニウムで形成するようにすると特性をさらに改善す
ることができる。Further, since the first region 31 and the second region 35 can be interconnected separately, the material of the metal film in each region can be made different as described above. For example, the pressure detection part wiring 33 of the first metal film 32 in the first region 31 forming the pressure detection part 2 is formed of molybdenum, which has a thermal expansion coefficient close to that of silicon, and the signal processing part 3 and the electrode part 16 2v′) metal film 3 of the second region 35 consisting of
The characteristics can be further improved by forming the signal processing section wiring 37 and the electrode 38 made of ordinary aluminum.
以上の実施例では第１の領域３１の圧力検出部配線３３
を先に施すようにしているが、この順序を逆にして第２
の領域３５の信号処理部配線３７と電極３８とを先に形
成するようにしても、全（同様の効果を得ることができ
る。In the above embodiment, the pressure detection section wiring 33 in the first region 31
I try to apply the second one first, but I reverse this order and apply the second one.
Even if the signal processing section wiring 37 and the electrode 38 in the area 35 are formed first, the same effect can be obtained.
第２図はこの発明による第２の配線方法の実施た 例を主体とじ（製作工程を示す断面図である。FIG. 2 shows the implementation of the second wiring method according to the present invention. An example of main binding (this is a sectional view showing the manufacturing process).
第２図（ａ）において示す半導体基板７０表面には圧力
検出部２゜信号処理部３．電極部１６が形成されており
、これは既に第１図および第３図に示した半導体基板７
と全く同一のものである。この半導体基板７の上に第１
の金属膜３２を、圧力検出部２．、の必要とする所定の
厚みである０、３７ｚいし０．８μｍに膜付けし、フォ
トリソグラフィによって図示のように圧力検出部配線５
１．信号処理部配線５２．電極５３ａを形成する。On the surface of the semiconductor substrate 70 shown in FIG. An electrode portion 16 is formed, which is formed on the semiconductor substrate 7 shown in FIGS. 1 and 3.
are exactly the same. On this semiconductor substrate 7, a first
The metal film 32 of the pressure detecting section 2. , to a predetermined thickness of 0.37μm to 0.8μm required for the pressure detection part wiring 5 as shown in the figure by photolithography.
1. Signal processing section wiring 52. An electrode 53a is formed.
次いで（ｂ）に示すようにＣＶＤ技術によって上記の圧
力検出部配線５１．信号処理部配線５２．電極５３ａの
上に保護膜５４を膜付けし、フォトリングラフィによっ
て電極部１６に穴５５をあけて電＠５３ａの表面を露出
させる。Next, as shown in (b), the above-mentioned pressure detection part wiring 51. Signal processing section wiring 52. A protective film 54 is deposited on the electrode 53a, and a hole 55 is made in the electrode portion 16 by photolithography to expose the surface of the electrode 53a.
さらに（ｃ）に示すように電極部１６に対して第２の金
属膜３６を電極５３ａの表面に重ねて膜付けし、フォト
リングラフィによりて電極５３ｂを形成する。Further, as shown in (c), a second metal film 36 is applied to the electrode portion 16 so as to overlap the surface of the electrode 53a, and an electrode 53b is formed by photolithography.
この場合電極５３ａと５３ｂの膜厚の合計が約１．ｏｒ
！いし１．５μｍとなるように調整して配線工程を終了
する。これによって電極５３ｂは電極５３ａに密着し、
電気的に良好な接触状態を示す。また穴５５も十分な大
きさであけられているので、電極５３ａと電極５３ｂと
の接合強度も十分で、ワイアボンディングに対して支障
を来すおそれがない。In this case, the total thickness of the electrodes 53a and 53b is about 1. or
! After adjusting the thickness to 1.5 μm, the wiring process is completed. As a result, the electrode 53b comes into close contact with the electrode 53a,
Shows good electrical contact. Further, since the hole 55 is also made with a sufficient size, the bonding strength between the electrode 53a and the electrode 53b is also sufficient, and there is no risk of hindrance to wire bonding.
（ｄ）においては半導体基板７の圧力検出部２の裏面に
凹部２１を設けて感圧膜２２を形成し、一体形半導体圧
力センサ５６が形作られる。In (d), a recess 21 is provided on the back surface of the pressure detection section 2 of the semiconductor substrate 7, a pressure sensitive film 22 is formed, and an integrated semiconductor pressure sensor 56 is formed.
この第２の配線方法は第１の配線方法にくらべて配線工
程が簡略化されて、低コスト化がはかれるという利点が
ある。This second wiring method has the advantage that the wiring process is simplified and costs can be reduced compared to the first wiring method.
この第２の配線方法においても圧力検出部配線５１と電
極５３ｂとの材質を異ならせることが可能であり、第１
の配線方法において述べたのと同様な特性改善を行わせ
ることができる。Also in this second wiring method, it is possible to make the pressure detection unit wiring 51 and the electrode 53b different from each other, and the first
Characteristic improvements similar to those described in the wiring method can be achieved.
この発明によれば、第１の配線方法においては圧力検出
部の金属膜の配線を、１！極部を含むその他の部分の配
線と分離して施すことができるので、圧力検出部の配線
の膜厚を薄（、電極部を厚く形成することが可能となり
、しかもそれぞれ異なる材質を用いることもでき、圧力
検出部の配線を半導体基板と熱膨張係数の同等の材料と
することができる。これＫよって圧力検出部においては
金属膜配線と基板との熱膨張係数の差にともなう応力を
低減させることかできて、一体形半導体圧力センサクン
特性の温度依存性を改善できる。According to this invention, in the first wiring method, the wiring of the metal film of the pressure detection part is 1! Since it can be applied separately from the wiring of other parts including the pole parts, it is possible to make the wiring of the pressure detection part thinner (and the electrode part thicker), and it is also possible to use different materials for each part. This allows the wiring of the pressure detection section to be made of a material with a coefficient of thermal expansion similar to that of the semiconductor substrate.Therefore, in the pressure detection section, stress due to the difference in coefficient of thermal expansion between the metal film wiring and the substrate can be reduced. As a result, the temperature dependence of the integrated semiconductor pressure sensor characteristics can be improved.
また第２の配線方法においては圧力検出部を含めて全体
に膜厚の薄い金属膜で配線を施した後、電極部のみさら
に金属膜を重ねて強度を与えるようにするので、第１の
配線方法と同様の効果を得ることができる。また圧力検
出部と電極部の材質も異なるものを用いることもできる
ので、第１の配線方法と同様の利点が得られる。さらに
第２の配線方法では配線工程が第１の配線方法にくらべ
て簡略化できるので、低コスト化がはかれる利点が付加
される。In addition, in the second wiring method, the entire wiring including the pressure detection part is wired with a thin metal film, and then only the electrode part is further layered with a metal film to give strength. A similar effect can be obtained using this method. Furthermore, since the pressure detection part and the electrode part can be made of different materials, the same advantages as the first wiring method can be obtained. Furthermore, since the second wiring method can simplify the wiring process compared to the first wiring method, it has the added advantage of reducing costs.
第１図はこの発明の第１の配線方法の実施例による製作
工程を示した断面図、第２図はこの発明の第２の配線方
法の実施例による製作工程を示した断面図、第３図は従
来の配線方法による製作工程を示す断面図である。
２：圧力検出部、３：信号処理部、７二半導体基板、８
：ｐ型拡散抵抗、１４，３３，５１：圧力検出部配線、
１５，３７，５２：信号処理部配線、１６：電極部、１
７ 、３８ 、５３ａ 、 ５３ｂ ：電極、１８，４
１．５６：一体形半導体圧力センサ素子、１９，３９，
５４：保護膜、２１：凹部、２２：感圧膜、３１：第１
の領域、３２：第１の金属膜、３４：被膜、３５：第２
の領域、３６：４１Ｊ 第１因FIG. 1 is a sectional view showing the manufacturing process according to an embodiment of the first wiring method of the present invention, FIG. 2 is a sectional view showing the manufacturing process according to the embodiment of the second wiring method of the invention, and FIG. The figure is a sectional view showing a manufacturing process using a conventional wiring method. 2: Pressure detection section, 3: Signal processing section, 72 semiconductor substrate, 8
: p-type diffused resistance, 14, 33, 51: pressure detection section wiring,
15, 37, 52: signal processing section wiring, 16: electrode section, 1
7, 38, 53a, 53b: electrode, 18, 4
1.56: Integrated semiconductor pressure sensor element, 19,39,
54: protective film, 21: recess, 22: pressure sensitive film, 31: first
region, 32: first metal film, 34: coating, 35: second
Area of, 36:41J first cause
Claims (2)
検出部と、その拡散抵抗の抵抗変化を検出増幅する信号
処理部と、外部回路への接続端子となる電極部を形成し
、前記の圧力検出部の裏面に凹部を設けて厚みの薄い感
圧膜を一体に形成した半導体圧力センサ素子の配線方法
であって、第１の金属膜の配線の施される圧力検出部よ
りなる第１の領域と第２の金属膜の配線の施される信号
処理部および電極部よりなる第２の領域の二つの領域の
うちの一方の領域に先ず所定の厚みの金属膜の配線を施
しその上に保護用の被膜を設け、次いで他方の領域に前
記の一方の領域の金属膜の配線とは異なる所定の厚みの
金属膜の配線を施し、前記の被膜を除去することを特徴
とする半導体圧力センサ素子の配線方法。(1) A pressure detection section in which a diffused resistor is formed on the surface of the same semiconductor substrate, a signal processing section that detects and amplifies the resistance change of the diffused resistor, and an electrode section that becomes a connection terminal to an external circuit are formed. A method for wiring a semiconductor pressure sensor element in which a recess is provided on the back surface of a pressure sensing portion and a thin pressure sensitive film is integrally formed therein, the first pressure sensing portion comprising a first pressure sensing portion to which a first metal film is wired. First, a metal film wiring of a predetermined thickness is applied to one of the two areas, the second area consisting of the signal processing part and the electrode part to which the second metal film wiring is applied. A semiconductor pressure device characterized in that a protective film is provided on the other region, then a metal film wiring having a predetermined thickness different from that of the metal film wiring in the one region is applied, and the film is removed. How to wire the sensor element.
検出部と、その拡散抵抗の抵抗変化を検出増幅する信号
処理部と、外部回路への接続端子となる電極部を形成し
、前記の圧力検出部の裏面に凹部を設けて厚みの薄い感
圧膜を一体に形成した半導体圧力センサ素子の配線方法
であって、圧力検出部と信号処理部と電極部とに対して
圧力検出部に必要とされる所定の厚みの第１の金属膜の
配線を施し、その上に半導体基板表面全体にわたって保
護膜を設けた後に電極部上の保護膜を除去し、電極部の
第１の金属膜の配線上に所定の厚みに第２の金属膜を重
ねて電極部の電極を形成することを特徴とする半導体圧
力センサ素子の配線方法。(2) A pressure detection section in which a diffused resistor is formed on the same semiconductor substrate surface, a signal processing section that detects and amplifies the resistance change of the diffused resistor, and an electrode section that becomes a connection terminal to an external circuit are formed, and the above-mentioned A wiring method for a semiconductor pressure sensor element in which a recess is provided on the back surface of a pressure sensing part and a thin pressure sensitive film is integrally formed, the wiring method being such that the pressure sensing part is connected to the pressure sensing part, the signal processing part and the electrode part. After wiring the first metal film to a required predetermined thickness and providing a protective film over the entire surface of the semiconductor substrate, the protective film on the electrode portion is removed, and the first metal film on the electrode portion is removed. A wiring method for a semiconductor pressure sensor element, characterized in that an electrode of an electrode portion is formed by overlaying a second metal film to a predetermined thickness on the wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2852188A JPH01204478A (en) | 1988-02-09 | 1988-02-09 | Wiring method for semiconductor pressure sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2852188A JPH01204478A (en) | 1988-02-09 | 1988-02-09 | Wiring method for semiconductor pressure sensor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01204478A true JPH01204478A (en) | 1989-08-17 |
Family
ID=12250976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2852188A Pending JPH01204478A (en) | 1988-02-09 | 1988-02-09 | Wiring method for semiconductor pressure sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01204478A (en) |
-
1988
- 1988-02-09 JP JP2852188A patent/JPH01204478A/en active Pending
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