JPH01201932A - Connecting structure of circuit element - Google Patents
Connecting structure of circuit elementInfo
- Publication number
- JPH01201932A JPH01201932A JP63026173A JP2617388A JPH01201932A JP H01201932 A JPH01201932 A JP H01201932A JP 63026173 A JP63026173 A JP 63026173A JP 2617388 A JP2617388 A JP 2617388A JP H01201932 A JPH01201932 A JP H01201932A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- particles
- connection
- electronic
- connecting member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 30
- 230000001070 adhesive effect Effects 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910000906 Bronze Inorganic materials 0.000 abstract 1
- 239000010974 bronze Substances 0.000 abstract 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 24
- 229910000679 solder Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010420 art technique Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 244000062175 Fittonia argyroneura Species 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010033799 Paralysis Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体素子なとのような電子回路素子を、回
路基板に接続するためなとに有利に実施することかでき
る回路素子の接続材料を用いた接続構造に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a connecting material for circuit elements, which can be advantageously implemented for connecting electronic circuit elements, such as semiconductor elements, to a circuit board. Regarding the connection structure used.
従来の技術 第３図は、典型的な先行技術の断面図である。Conventional technology FIG. 3 is a typical prior art cross-sectional view.
近年、電子機器一般において、製品の軽量小形化か活発
に行われている。たとえはフラットティスプレィなどと
称される液晶表示板を、携帯用テレヒ受像機、文章作成
機、あるいは車載用表示装置などに用いることによって
、これらの小形化および薄形化を図ることができる。ぞ
こて、これらの表示装置の回路基板と、その回路基板に
接続される半導体素子などの電子部品との接続は、製品
の外径寸法を制約し、軽量（ヒ、薄形化」〕よひ小形１
ヒをより一層泥進する上て極めて重要な意味を有してい
る。2. Description of the Related Art In recent years, electronic devices in general have been actively made to be lighter and more compact. For example, by using a liquid crystal display panel called a flat display in a portable television receiver, text creation machine, or vehicle-mounted display device, it is possible to make these devices smaller and thinner. The connection between the circuit board of these display devices and the electronic components such as semiconductor elements connected to the circuit board limits the outer diameter of the product, and it is important to make it lighter and thinner. Small form 1
It has an extremely important meaning in further advancing the country.
このような製品の軽量化、薄形（ヒおよび小形１ヒを図
るための先行技術は、特開昭６０ ２３８８１７、特公
昭５８ ３８７６８および特公昭５８−３８７６９に鈎
示されている導電性接着剤を利用した実装構造かある。Prior art techniques for making such products lighter, thinner and smaller are conductive adhesives disclosed in JP-A-60 238817, JP-B No. 58-38768, and JP-B No. 58-38769. There is an implementation structure using .
これらの先行技術は、第３図に示されるように、たとえ
はシリコンから成る本体１の一表面に、保護層２とアル
ミニウノ、またはアルミニウムーシリコンなとから成る
配線層３か形成され、配線層３には金または金、メツキ
された銅などから成る電極４か形成されて電子部品５が
構成される。電極４は、その厚みかたとえは２０〜６０
ＡＬｍ程度である。In these prior art techniques, as shown in FIG. 3, a protective layer 2 and a wiring layer 3 made of aluminum UNO or aluminum-silicon are formed on one surface of a main body 1 made of silicon, for example, and the wiring layer 3 is formed of An electrode 4 made of gold, gold, plated copper, or the like is formed on 3 to constitute an electronic component 5. The thickness of the electrode 4 is approximately 20 to 60 mm.
It is about ALm.
また電子部品５は、たとえは大規模集積回路（ＬＳＩ）
なとの半導体素子である。透明ガラスなどから成るもう
一方の本体６の一表面には、配線層７が形成されて液晶
表示板なとの回路基板８か構成されている。配線層７は
、その厚みがたとえは１０００〜２０００人程度の金属
酸化物透明薄膜（略称■Ｔ○）から成っている。電子部
品５と回路基板８とは、電極４の表面４ａと配線層７の
表面７ａとの間に、導電性接着剤９を介在して電気的に
接続される。この導電性接着剤９は、たとえは銀糸ベー
ス１〜か用いられている。Furthermore, the electronic component 5 is, for example, a large-scale integrated circuit (LSI).
This is a semiconductor device. On one surface of the other main body 6 made of transparent glass or the like, a wiring layer 7 is formed to constitute a circuit board 8 such as a liquid crystal display panel. The wiring layer 7 is made of a metal oxide transparent thin film (abbreviated as ■T○) having a thickness of, for example, about 1,000 to 2,000 layers. The electronic component 5 and the circuit board 8 are electrically connected to each other with a conductive adhesive 9 interposed between the surface 4a of the electrode 4 and the surface 7a of the wiring layer 7. This conductive adhesive 9 is used, for example, from the silver thread base 1.
このような先行技術ては、配線層３上に突出した電極１
１を設ける必要かあるため、材料費および製造費か高価
となってしまい、経済性か悪いという問題かある。In such prior art, the electrode 1 protrudes above the wiring layer 3.
1, the material cost and manufacturing cost are high, which poses a problem of poor economic efficiency.
第４図は、池の先行技術の断面図である。なお、上述の
先行技術と対応する部分には、同一の参照符を付す。前
記電極４か形成されていない電子部品５と回路基板８と
は、配線層３，７の各表面３ａ １７ Ｅ尤の間に、導
電性接着剤９を介在して接続されている。このような先
行技術では、第５図に示されるように、導電性接着剤９
が軟質ヅ）ペースト状であるため、電子部品５と回路基
板８との接続時に、ペースト状の接着剤９か過度に押し
広（プられてしまい、これによって隣接する配線層３゜
７か不所望に接続されてしまい、したか−）で短絡して
電子部品５または回路基板８か破損してしまう恐れがあ
る。FIG. 4 is a cross-sectional view of the prior art pond. Note that parts corresponding to those in the above-mentioned prior art are given the same reference numerals. The electronic component 5 on which the electrode 4 is not formed and the circuit board 8 are connected to each other with a conductive adhesive 9 interposed between the surfaces 3a 17 E of the wiring layers 3 and 7. In such prior art, as shown in FIG.
Since the adhesive is in the form of a soft paste, when the electronic component 5 and the circuit board 8 are connected, the paste adhesive 9 may be pushed out excessively, causing damage to the adjacent wiring layer 3. There is a risk that the electronic component 5 or the circuit board 8 may be damaged due to a short circuit caused by the incorrect connection.
また、電子部品５と回路基板８との熱膨張率の違いによ
って高温や低温となったときには、接続部に剪断歪か生
し、これとと乙に剪断応力が発生する。この剪断応力か
大きいと接着剤９の剥離や破断に致る場きがある。第６
図はこの一例として電子部品５よりも回路基板８の膨張
率か大きく、しかも高温にさらされた場合の変形状態を
示している。この状態において、接着剤９の高さ！２が
低いほと、剪断歪がより顕著になることはよく知られて
いる。したかってベース１〜状の接着剤９が過度に押し
潰されるような状態か生じる１足来の接続ｔ７Ｉｌ造で
は、信頼性の高い接続を長期にわたー）て維持すること
はてきない。Further, when the temperature becomes high or low due to the difference in the coefficient of thermal expansion between the electronic component 5 and the circuit board 8, shear strain occurs in the connection portion, and shear stress is generated in this and the circuit board 8. If this shear stress is large, the adhesive 9 may peel or break. 6th
As an example, the figure shows a deformed state when the circuit board 8 has a larger expansion coefficient than the electronic component 5 and is exposed to high temperatures. In this state, the height of the adhesive 9! It is well known that the lower the value of 2, the more pronounced the shear strain. Therefore, if the connection is made for only one time, in which the adhesive 9 on the bases 1 to 9 is crushed excessively, it is not possible to maintain a highly reliable connection over a long period of time.
第７図は、特開昭５７−９５６４０および特開昭５７−
１０６５７などに開示される半田を利用したさらに池の
先行技術の断面図である。保護層２および配線層３グ）
表面には、銅、ニッケル、クロムあるいはチタンなとび
）金属またはき金材料から成る金属多層膜１ｏが形成さ
れている。また、回路基板８グ）−表面に形成された配
線層７上には、半田層１１に対してぬれ性を向上するな
めに、ニンケルなとの金属材料から成る被覆層１２が形
成されている。このようにして、電子部品５は、回路基
板８に半田層１１を介して電気的および機械的に接続さ
れる。Figure 7 shows JP-A-57-95640 and JP-A-57-
10657, etc., is a cross-sectional view of a further prior art technique using solder; FIG. protective layer 2 and wiring layer 3)
A metal multilayer film 1o made of a metal such as copper, nickel, chromium, or titanium or a metal material is formed on the surface. Further, on the wiring layer 7 formed on the surface of the circuit board 8), a coating layer 12 made of a metal material such as nickel is formed to improve wettability with the solder layer 11. . In this way, the electronic component 5 is electrically and mechanically connected to the circuit board 8 via the solder layer 11.
このような先行技術では、半田にぬれ性を有する被覆層
１２、金属多層膜１ｏおよび半田層１１を形成する必要
があり、材料費および製造費が高価となり、経済性が悪
いという問題がある。また半田層１１を溶融するなめに
、接着剤よりも高温で加熱を行わなけれはならす、した
がってこのような加熱された半田層１１の熱によって電
子部品５ Ｊ３まひ回路基板８に熱影響を与えないよう
に接続を行うためには、接続作業が複雑となって、接続
作業に手間を要してしまう。したがって作業性、生産性
か悪いという問題がある。In such prior art, it is necessary to form the coating layer 12, the metal multilayer film 1o, and the solder layer 11 which have solder wettability, which increases the material cost and the manufacturing cost, resulting in poor economic efficiency. In addition, in order to melt the solder layer 11, it is necessary to heat it at a higher temperature than the adhesive, so that the heat of the heated solder layer 11 does not have a thermal effect on the electronic components 5 and the J3 paralyzed circuit board 8. In order to make such a connection, the connection work becomes complicated and requires time and effort. Therefore, there is a problem of poor workability and productivity.
第８図は、日経マイクロチハイス１９８７年６月号第１
９頁に開示されている異方導電性接着剤を利用したさら
に池の先行技術の断面図である。Figure 8 is from Nikkei Microchip High School June 1987 issue 1.
9 is a cross-sectional view of a further prior art technique utilizing an anisotropically conductive adhesive disclosed on page 9. FIG.
前述した第３図Ｊ′）よび第５図示の先行技術では、導
電性接着剤９を用いて、電子部品５と回路基板８とを接
続する構成であったけれども、この先行技術では異方導
電性接着剤１４が用いられる。このような先行技術によ
ってもまた、第３図示の先行技術て述ｌ＼たように、突
起状の電極４を設けなりれはならないため、材料費およ
び製造費が高価となってしまうという問題がある。In the prior art shown in FIG. 3 J') and FIG. A adhesive 14 is used. This prior art also has the problem of high material and manufacturing costs because the protruding electrode 4 must be provided, as described in the prior art shown in Figure 3. be.
発明か解決しようとする課題
本発明の目的は、上述の技術的課題を解決し、材料およ
び製造コス１〜を低減し、軽量（ヒ、薄形化および小形
化を図ることができるように電子回路素子を接続するこ
とができるようにした回路素子の接続材料を用いた接続
構造を提供することである。The purpose of the present invention is to solve the above-mentioned technical problems, to reduce material and manufacturing costs, and to reduce the weight, thickness, and size of an electronic device. It is an object of the present invention to provide a connection structure using a connection material for circuit elements that can connect circuit elements.
課題を解決するための手段
本発明は、電子回路素子と回路基板との電極接続におい
て、導電性接着剤と、電子回路素子の接続時に変形しな
い程度の剛性を有する粒子とを含む接続部材を前記電子
回路素子と回路基板との間に介在して成ることを特徴と
する回路素子の接続構造である。Means for Solving the Problems The present invention provides an electrode connection between an electronic circuit element and a circuit board using a connecting member containing a conductive adhesive and particles having a rigidity that is not deformed during connection of the electronic circuit element. This is a circuit element connection structure that is interposed between an electronic circuit element and a circuit board.
作 用
本発明に従えは、導電性接着剤に剛性を有する粒子か混
入されるため、電子回路素子の接続時に所望の間隔を均
一に保って容易に接することかでき、材質！〕よひ製造
コストを増大させることなく、確実に接続することか可
能になる。しかも前記先行技術に関連して述Ｊ＼たよう
に、粒子は電子回路素子の接続時に変形しない程度の剛
性を有するため、導電性接着剤かむやみに押し潰されて
、隣接する配線層に接触する恐れかなく、接続時のショ
ートなとを防止することかてきる。また、温度の変化か
生した場きでも、電子部品と回路基板との間隔を大きく
取ることによって、電子部品と回路基板との熱膨張率の
違いに起因する剪断応力を低減することかてきるため、
信頼性の高い接続状態を１呆−）ことかてきる。Function According to the present invention, since rigid particles are mixed into the conductive adhesive, when connecting electronic circuit elements, it is possible to easily maintain desired spacing and contact with the material. ] It becomes possible to connect reliably without increasing manufacturing costs. Moreover, as mentioned in connection with the prior art, the particles have enough rigidity to not deform when connecting electronic circuit elements, so they are crushed by the conductive adhesive and come into contact with the adjacent wiring layer. It is possible to prevent short circuits during connection without worrying about the possibility of damage. Furthermore, even in the event of temperature changes, by increasing the distance between electronic components and circuit boards, it is possible to reduce shear stress caused by the difference in thermal expansion coefficient between electronic components and circuit boards. For,
A highly reliable connection state can be referred to as 1-).
実施例 第１図は、本発明の一実施例の断面図である。Example FIG. 1 is a sectional view of one embodiment of the present invention.
大規模集積回路（ＬＳＩ）なとの電子部品２０は、シリ
コンなどから成る本体２１と、本体２１の一表面に形成
された電極２２と、保護層２３とを含む。また、液晶表
示板などの回路基板２９は、ガラスなとから成る本体２
４と、この本体２４の一表面に形成された配線層２５と
を含む。前記電極２２は、たとえはアルミニウムーシリ
コン、ニッケル、金、チタンおよびタングステンなどか
ら成っている。An electronic component 20 such as a large-scale integrated circuit (LSI) includes a main body 21 made of silicon or the like, an electrode 22 formed on one surface of the main body 21, and a protective layer 23. Further, the circuit board 29 such as a liquid crystal display board is connected to the main body 2 made of glass.
4, and a wiring layer 25 formed on one surface of the main body 24. The electrode 22 is made of, for example, aluminum-silicon, nickel, gold, titanium, and tungsten.
また、前記配線層２５は、たとえは金属酸化物透明薄膜
（略称ＩＴＯ）である。これらの電子部品２０と回路基
板２９とは、電極２２の表面２２ａと、配線層２５の表
面２５ａとが所望する間隔β１を有するように、接続部
材２６によって接続される。この接続部材２６は、導電
性接着剤２７と、この導電性接着剤に混入された粒子２
８とをよむ。導電性接着剤２７は、たとえば銀糸ペース
トか用いられる。また粒子２８は、粒径か１０〜３０μ
珀の銀粉、フロンス粉またはカラス粉などが用いられる
。また粒径約１０〜３０μｍのプラスチンクヒースまた
はプラスチックヒーズにニンゲルメンキを施したものが
用いられる。Further, the wiring layer 25 is, for example, a metal oxide transparent thin film (abbreviated as ITO). These electronic components 20 and circuit board 29 are connected by connecting member 26 such that surface 22a of electrode 22 and surface 25a of wiring layer 25 have a desired distance β1. This connecting member 26 includes a conductive adhesive 27 and particles 2 mixed in the conductive adhesive.
Read 8. For example, silver thread paste is used as the conductive adhesive 27. The particle size of the particles 28 is 10 to 30 μm.
Amber powder, frons powder, crow powder, etc. are used. Furthermore, plastic heath or plastic heath with particle size of about 10 to 30 μm coated with Ningelmenki is used.
このような粒子２８と、導電性接着剤２７との混危物で
ある接着材料２６を用いて、電子部品２０と回路基板２
つとを接続する場合には、先ずペースト状の接続部材２
６を電子部品２０の電極２２上に塗布して、接続すＩ＼
き回路基板２９に接着する。この状態て１２０〜１５０
°Ｃ程度の雰囲気中で、たとえは３０分間加熱を行い、
接続部材２６を硬１ヒさぜる。また必要に応して、電子
部品２０と回路基板２９との間に、封止用樹脂を注入し
たり、あるいは電子部品２０および回路基板２９の全面
を機械的に被覆するようにしてもよい。The electronic component 20 and the circuit board 2 are bonded using the adhesive material 26 which is a mixture of such particles 28 and the conductive adhesive 27.
When connecting two parts, first paste the connecting member 2.
6 on the electrode 22 of the electronic component 20 and connect it.
and adhere to the circuit board 29. 120-150 in this condition
Heating for 30 minutes in an atmosphere of around °C,
Give the connecting member 26 a firm squeeze. Furthermore, if necessary, a sealing resin may be injected between the electronic component 20 and the circuit board 29, or the entire surfaces of the electronic component 20 and the circuit board 29 may be mechanically covered.
こうして接続された電子部品２０と回路基板２９とは、
予め定めた一定の間隔１１を成して接続されている。ま
た、前記粒子２８は球形てあってもよく、その他の形状
、たとえば多面体形状なとてあってもよい。The electronic component 20 and circuit board 29 connected in this way are
They are connected at a predetermined constant interval 11. Further, the particles 28 may be spherical or may have other shapes, such as polyhedral shapes.
第２図は、接続部材２６によって接続されるへき回路基
板２つの部分平面図である。前述した所望の径の粒子２
８を含む接続部材２６は、たとえは配線層２５上の複数
の接続位置３０のうち、適当な接続位置たとえは３０
ａ 、 ３０ ｂ 、 ３０ ｃ 。FIG. 2 is a partial plan view of two separate circuit boards connected by a connecting member 26. FIG. Particles 2 of the desired diameter described above
The connection member 26 including 8 is connected to a suitable connection position, for example 30, among the plurality of connection positions 30 on the wiring layer 25.
a, 30 b, 30 c.
３０（ｌに対応する電子部品２０の電極２２上に塗着す
れはよく、接続位置３０ ＝を−３０（ｌ以外の接続位
置３１に対応する電・子部品２０の電極２２上には、導
電性接着剤２７たけまたは所望の径の粒子２８より小さ
い粒子を含む接続部材を用いて接続リーるようにしても
よい。このように少なくとも３箇所以上の接続位置３０
に、本発明の所望の径の粒子２８を含む接続部材２６を
用いることによって、所望の間隔１１を均一に保持する
ことができ、しかも材料コストを低減することかできる
。The coating on the electrode 22 of the electronic component 20 corresponding to 30 (l) was good, and the connection position 30 = -30 (the electrode 22 of the electronic component 20 corresponding to the connection position 31 other than l was coated with conductive material). The connection may be made using a connecting member containing adhesive 27 or particles smaller than the desired diameter particles 28. In this way, at least three connection positions 30 are formed.
Furthermore, by using the connecting member 26 of the present invention containing particles 28 of a desired diameter, the desired spacing 11 can be maintained uniformly, and the material cost can be reduced.
発明の効果
本発明によれは、導電性接着剤に剛性を有する粒子か混
入されるため、電子回路素子の接続時に所望の間隔を均
一に保った状態で、コストを増大させることなく、接続
することか可能になる。しかも前記先行技術に関連して
述ｌ＼たように１、粒子は電子回路接続時に変形しない
程度の剛性を有するため、導電性接着剤か押し潰されて
、隣接する配線層に接触する恐れがなく、接続時のショ
ートなとを防止することができる。また、電子回路素子
か加熱された場きてあっても、電子回路素子と回路基板
の間隔を大きく取れるため電子回路素子と回路基板の熱
膨張率の違いから生しる剪断による問題を解消すること
かてさ、信頼性の高い接続状態を１呆つ、二とかてきる
。Effects of the Invention According to the present invention, since rigid particles are mixed into the conductive adhesive, electronic circuit elements can be connected while maintaining the desired spacing uniformly without increasing costs. It becomes possible. Moreover, as mentioned in connection with the prior art, the particles have enough rigidity to not deform when connecting electronic circuits, so there is a risk that the conductive adhesive will be crushed and come into contact with the adjacent wiring layer. This prevents short circuits during connection. In addition, even if the electronic circuit elements are heated, the distance between the electronic circuit elements and the circuit board can be increased, which eliminates the problem of shearing caused by the difference in thermal expansion coefficient between the electronic circuit elements and the circuit board. In other words, the connection status is highly reliable.
第１図は本発明７１−実施例の断面図、第２図は接続部
材２６によって接続される接続位置を示す回路基板２９
の平面図、第３図〜第８図は先行技術の断面図である。
１．２１−１電子部材）木本、２，２３ 渫護膜、３．
７．２５ 配線層、・ｌ ・突出した電極、５．２０
電子部品、６，２ｔｌ−（回路基板）本体、８．２９
１回路基板、９，２７ 導電性接着剤、１０ 金属多側
Ｌ１１−半田層、１２ 被覆層、１４ 異方導電性接着
剤、２２ 電極、２６ 接続部材、２８−粒子
代理人 弁理士 西教 圭一部
第１図
ａ
第 ３ 囚
第４図
７ａ
笥 ７図
手続補正書 ６
昭和６３年 ３月１１日 Ｆ
特許庁長官殿 ７１、事
件の表示 適 （１特願昭６
３−２６１７．３ 開Ｉ２、発明の名称
−回路素子の接続構造
（：３、補正をする者
と。
事件との関係 出願人
住所 大阪市阿倍野区長池町２２番２２号名称 （５０
４）シャープ株式会社
代表者 辻 晴 雄
４、代理人
住 所 大阪市西区西木町１丁目１３番３８号 新興産
ビル国装置ＥＸ ０５２５−５９８５ ＩＮＴＡＰＴ
Ｊ国際ＦＡＸ ＧＩ［［＆ＧＩＩ （０６）５３８−
０２４７＼、
八
４２、・
ン
、補正の対象
男細書の発明の詳細な説明の欄
、補正の内容
）明細書第５頁第２行目〜第３行目において「特沼５７
−１０６５７Ｊとあるを、［特開昭５７１０６０５７Ｊ
に訂正する。
と）明細書第６頁第６行目において「第１９頁」ちるを
、「第６９頁」に訂正する。
以 上FIG. 1 is a sectional view of the present invention 71-Embodiment, and FIG. 2 is a circuit board 29 showing the connection position connected by the connection member 26.
3-8 are cross-sectional views of the prior art. 1.21-1 Electronic components) Kimoto, 2, 23 Alpine protection film, 3.
7.25 Wiring layer, ・l ・Protruding electrode, 5.20
Electronic parts, 6,2tl- (circuit board) main body, 8.29
1 circuit board, 9, 27 conductive adhesive, 10 metal multi-side L11 - solder layer, 12 coating layer, 14 anisotropic conductive adhesive, 22 electrode, 26 connection member, 28 - particle agent patent attorney Keiichi Nishikyo Part Figure 1a Figure 3 Prisoner Figure 4 7a Figure 7 Procedural Amendment 6 March 11, 1988
3-2617.3 Opening I2, Title of the invention - Connection structure of circuit elements (:3, Person making the amendment
and. Relationship to the case Applicant Address 22-22 Nagaike-cho, Abeno-ku, Osaka Name (50
4) Sharp Corporation Representative: Haruo Tsuji 4, Agent address: 1-13-38 Nishiki-cho, Nishi-ku, Osaka Shinko Sangbu Kokukoku Equipment EX 0525-5985 INTAPT
J International FAX GI[[&GII (06)538-
0247＼, 842,・ N, Detailed description of the invention column of the specifications subject to amendment, content of the amendment) ``Tokunuma 57
-10657J, [Unexamined Japanese Patent Publication No. 57106057J
Correct to. ) On page 6, line 6 of the specification, "Page 19" is corrected to "Page 69."that's all
Claims (1)
性接着剤と、電子回路素子の接続時に変形しない程度の
剛性を有する粒子とを含む接続部材を前記電子回路素子
と回路基板との間に介在して成ることを特徴とする回路
素子の接続構造。In electrode connection between an electronic circuit element and a circuit board, a connecting member containing a conductive adhesive and particles having a rigidity that does not deform when the electronic circuit element is connected is interposed between the electronic circuit element and the circuit board. A circuit element connection structure characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026173A JPH01201932A (en) | 1988-02-06 | 1988-02-06 | Connecting structure of circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026173A JPH01201932A (en) | 1988-02-06 | 1988-02-06 | Connecting structure of circuit element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01201932A true JPH01201932A (en) | 1989-08-14 |
Family
ID=12186144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63026173A Pending JPH01201932A (en) | 1988-02-06 | 1988-02-06 | Connecting structure of circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01201932A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04181796A (en) * | 1990-11-16 | 1992-06-29 | Nippondenso Co Ltd | Integrated type circuit device |
| US5804882A (en) * | 1995-05-22 | 1998-09-08 | Hitachi Chemical Company, Ltd. | Semiconductor device having a semiconductor chip electrically connected to a wiring substrate |
| US5834374A (en) * | 1994-09-30 | 1998-11-10 | International Business Machines Corporation | Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
| US5846853A (en) * | 1991-12-11 | 1998-12-08 | Mitsubishi Denki Kabushiki Kaisha | Process for bonding circuit substrates using conductive particles and back side exposure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271177A (en) * | 1975-12-10 | 1977-06-14 | Seiko Epson Corp | Semiconductor device |
-
1988
- 1988-02-06 JP JP63026173A patent/JPH01201932A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271177A (en) * | 1975-12-10 | 1977-06-14 | Seiko Epson Corp | Semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04181796A (en) * | 1990-11-16 | 1992-06-29 | Nippondenso Co Ltd | Integrated type circuit device |
| US5846853A (en) * | 1991-12-11 | 1998-12-08 | Mitsubishi Denki Kabushiki Kaisha | Process for bonding circuit substrates using conductive particles and back side exposure |
| US5834374A (en) * | 1994-09-30 | 1998-11-10 | International Business Machines Corporation | Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
| US5945737A (en) * | 1994-09-30 | 1999-08-31 | International Business Machines Corporation | Thin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible element |
| US5804882A (en) * | 1995-05-22 | 1998-09-08 | Hitachi Chemical Company, Ltd. | Semiconductor device having a semiconductor chip electrically connected to a wiring substrate |
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