JPH01196864A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH01196864A JPH01196864A JP63023066A JP2306688A JPH01196864A JP H01196864 A JPH01196864 A JP H01196864A JP 63023066 A JP63023066 A JP 63023066A JP 2306688 A JP2306688 A JP 2306688A JP H01196864 A JPH01196864 A JP H01196864A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solid
- amorphous
- dark current
- interface level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- -1 SiC hydride Chemical class 0.000 abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a solid-state imaging device.
従来の技術
固体撮像装置は、半導体基板上にアレイ状に配置された
複数個の光電変換素子と、電荷を時間系列的に読み出す
手段とで構成されている。A conventional solid-state imaging device includes a plurality of photoelectric conversion elements arranged in an array on a semiconductor substrate, and means for reading out charges in time series.
従来、この種の固体撮像装置として、ＰＮ接合ダイオー
ドを光電変換素子として用いるものが一般的である。Ｐ
Ｎ接合ダイオードで光電変換され。Conventionally, this type of solid-state imaging device generally uses a PN junction diode as a photoelectric conversion element. P
Photoelectrically converted by an N-junction diode.
集積された電荷はＭＯＳ）ランシスターを用いた走査回
路が、電荷転送素子を利用して時間系列の電気信号とし
て取り出される。このような固体撮像装置において、Ｐ
Ｎ接合ダイオードに入射する光がない場合でも、熱的に
発生する電荷（いわゆる暗電流）が集積される。この暗
電流は温度に応答して増減し、場所的にも変動する。し
たがって、ＰＮ接合ダイオードに入射する光に応答した
電荷を集積するとき、前述の暗電流があるため、光に応
答した信号電荷との混合が起り入射画像に正確に応答し
た映像信号が得られない。これは再生画像上では暗電流
ムラとなって現れ、特に温度が上昇すると著しく画質を
劣化させる原因となっている。The integrated charge is extracted as a time-series electric signal by a scanning circuit using a MOS (MOS) run sister using a charge transfer element. In such a solid-state imaging device, P
Even when there is no light incident on the N-junction diode, thermally generated charges (so-called dark current) are accumulated. This dark current increases and decreases in response to temperature, and also varies depending on location. Therefore, when accumulating charges in response to light incident on a PN junction diode, due to the aforementioned dark current, mixing occurs with signal charges in response to light, making it impossible to obtain a video signal that accurately responds to the incident image. . This appears as dark current unevenness on the reproduced image, and is a cause of significant deterioration of image quality, especially when the temperature rises.
発明が解決しようとする課題
暗電流の発生原因はＰＮ接合ダイオードの界面からが殆
んどで、この界面準位を下げるため、パシベーション保
護膜形成後の水素処理を行ったり、窒化シリコン膜を形
成したりされる。水素処理を用いる方法は素子温度約４
０ ’Ｃ１度まで暗電流低減効果があるものの６０℃を
越えると急激に増加を始め実用的な暗電流低′減を実現
するに至っていない。また窒化シリコン膜を用いる場合
可視光。Problems to be Solved by the Invention Most of the causes of dark current are generated from the interface of the PN junction diode, and in order to lower this interface level, hydrogen treatment after the formation of a passivation protective film or formation of a silicon nitride film are required. be done. In the method using hydrogen treatment, the element temperature is approximately 4
Although there is an effect of reducing the dark current down to 0'C1 degree, the dark current starts to increase rapidly when the temperature exceeds 60 degrees Celsius, and a practical dark current reduction has not yet been achieved. Also, visible light when using silicon nitride film.
特に短波長側での反射が大きいため、光電変換部に入射
し電荷を発生する効率を低下し、感度が落ちてしまう。In particular, since the reflection on the short wavelength side is large, the efficiency with which light is incident on the photoelectric conversion unit and generates charge is reduced, resulting in a decrease in sensitivity.
このため暗電流低減効果は大きいものの固体撮像装置に
適用するまでにはなっていないのが現状である。Therefore, although it has a large dark current reduction effect, it has not yet been applied to solid-state imaging devices.
本発明の目的はＰＮ接合ダイオード界面準位を改善し、
暗電流を低減させることにより、高温使用時の固体撮像
装置の画質低下を改善することを目的としている。The purpose of the present invention is to improve the PN junction diode interface state,
The purpose is to improve the image quality deterioration of solid-state imaging devices when used at high temperatures by reducing dark current.
課題を解決するだめの手段
本発明の固体撮像装置は非晶質水素化アモルファスＳｉ
Ｃ膜が光電変換部上に形成されて構成されている。Means for Solving the Problems The solid-state imaging device of the present invention uses amorphous hydrogenated amorphous Si.
A C film is formed on the photoelectric conversion section.
作 用
この構成により非晶質水素化アモルファスシリコン膜の
界面準位効果により界面準位より発生する暗電流を下げ
、暗電流ムラによる画質低下が改善される。Function: With this configuration, the dark current generated from the interface state is reduced due to the interface state effect of the amorphous hydrogenated amorphous silicon film, and image quality deterioration due to dark current unevenness is improved.
実施例
第１図は本発明に実施した電荷転送型固体撮像装置の構
成図である。１はＰＮ接合ダイオードからなる光電変換
素子列、２は垂直転送電荷転送素子列、３は水平読み出
し用の電荷転送素子列で、それに隣接して出力検知部４
が設けられている。Embodiment FIG. 1 is a block diagram of a charge transfer type solid-state imaging device implemented in the present invention. 1 is a photoelectric conversion element array consisting of a PN junction diode, 2 is a vertical transfer charge transfer element array, 3 is a charge transfer element array for horizontal readout, and adjacent thereto is an output detection section 4.
is provided.
光電変換素子列部の数は横４４０縦４９６からなってい
る。第２図はＰＮ接合ダイオード６近辺の断面模式図で
ある。配線、遮光用のＡＬ膜９を形成後、絶縁膜１１を
介して非晶質水素化アモルファスＳｉＣ膜１１が形成さ
れ、３の上からリンガラス、窒化ガラスからなる保護１
２が形成されている。The number of photoelectric conversion element rows is 440 horizontally and 496 vertically. FIG. 2 is a schematic cross-sectional view of the vicinity of the PN junction diode 6. After forming the AL film 9 for wiring and light shielding, an amorphous hydrogenated amorphous SiC film 11 is formed via an insulating film 11, and a protective film 1 made of phosphorus glass and nitride glass is formed on top of 3.
2 is formed.
非晶質水素化アモルファスＳｉＣ膜はプラズマＣＶＤに
よりメタンガスを用いて２０００人の膜厚で形成されて
いる。The amorphous hydrogenated amorphous SiC film is formed to a thickness of 2000 nm by plasma CVD using methane gas.
本発明の効果をみるだめ２６℃、４０℃、６０℃。To see the effects of the present invention, the temperatures were 26°C, 40°C, and 60°C.
８０℃と温度を変え、暗電流の変化をみ結果を第３図に
示す。The temperature was changed to 80° C., and the changes in dark current were observed and the results are shown in FIG.
暗電流の低減効果が一番大きいとされる。窒化シリコン
膜を用い、そのあと水素処理をおこなう従来方法につい
ても比較のためのせである。この方法は感度は犠牲にな
るものの暗電流は周囲温度６０°Ｃ程度まで実用的な画
質は維持できる。図から分るように従来方法では６０’
Ｃで３ ｎＡの暗電流であるのに対し本発明を用いた素
子では１ｎＡ程度となっている。さらに温度をあげ８０
℃近くにあげても暗電流は３ ｎＡ程度となり、画質も
十分維持できた。It is said to have the greatest dark current reduction effect. The conventional method of using a silicon nitride film and then performing hydrogen treatment is also included for comparison. Although this method sacrifices sensitivity, dark current can maintain practical image quality up to an ambient temperature of about 60°C. As can be seen from the figure, in the conventional method, 60'
While the dark current is 3 nA in C, it is about 1 nA in the element using the present invention. Further raise the temperature to 80
Even when the temperature was raised to near ℃, the dark current was about 3 nA, and the image quality was sufficiently maintained.
非晶質水素化アモルファスＳｉＣ膜は禁止帯域が広く、
可視光は透過するため、この膜をつけたことによる感度
の低下は殆んどなかった。The amorphous hydrogenated amorphous SiC film has a wide forbidden band;
Since visible light is transmitted, there was almost no decrease in sensitivity due to the addition of this film.
以上述べたように非晶質水素化アモルファスＳｉＣ膜を
固体撮像装置上に形成することにより、感度の低下なく
暗電流の大幅な低下が可能で、撮像画像の大幅な画質向
上が可能となった。As described above, by forming an amorphous hydrogenated amorphous SiC film on a solid-state imaging device, it is possible to significantly reduce dark current without decreasing sensitivity, and it has become possible to significantly improve the image quality of captured images. .
また、形成された非晶質水素化アモルファスＳｉＣ膜の
電位を固定しておくことにより、さらに安定した暗電流
の低減効果が認められた。たとえばＮ層の拡散層をもつ
ＰＮダイオードでは負電圧をかけると、ＰＮ接合ダイオ
ード表面の空乏化による影響を抑えることができ、効果
が大きかった。Further, by fixing the potential of the formed amorphous hydrogenated amorphous SiC film, a more stable dark current reduction effect was observed. For example, applying a negative voltage to a PN diode with an N-layer diffusion layer was effective in suppressing the effects of depletion on the surface of the PN junction diode.
発明の効果
以上のように、本発明は、非晶質水素化アモルファＳｉ
Ｃが被着されることにより、固体撮像装置の暗電流を大
幅に低減することができ、その実用的効果は大なるもの
がある。Effects of the Invention As described above, the present invention provides amorphous hydrogenated amorphous Si.
By depositing C, the dark current of the solid-state imaging device can be significantly reduced, which has great practical effects.
第１図は本発明を実施した電荷転送型固体撮像装置の構
成例を示す平面図、第２図は本発明の一実施例の断面図
、第３図は本発明の詳細な説明する図である。
６・・・・・・ＰＮ接合ダイオード、６・・・・・・垂
直電荷転送素子の埋め込み層、７・・・・・・チャンネ
ルストッパー、８・・・・・・垂直転送電極、９・・・
・・・遮光ＡＬ、１ｏ・・・・・・絶縁膜、１１・・・
・・・非晶質水素化アモルファスＳｉＣ膜、１２・・・
・・・保護膜。FIG. 1 is a plan view showing a configuration example of a charge transfer solid-state imaging device embodying the present invention, FIG. 2 is a cross-sectional view of an embodiment of the present invention, and FIG. 3 is a diagram illustrating details of the present invention. be. 6... PN junction diode, 6... Buried layer of vertical charge transfer element, 7... Channel stopper, 8... Vertical transfer electrode, 9...・
... Light shielding AL, 1o... Insulating film, 11...
...Amorphous hydrogenated amorphous SiC film, 12...
···Protective film.
Claims (2)
ることを特徴とする固体撮像装置。(1) A solid-state imaging device characterized by having an amorphous hydrogenated amorphous SiC film on its surface.
上に設けられていることを特徴とする特許請求の範囲第
１項記載の固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein an amorphous hydrogenated amorphous SiC film is provided on the photoelectric conversion section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023066A JPH01196864A (en) | 1988-02-02 | 1988-02-02 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023066A JPH01196864A (en) | 1988-02-02 | 1988-02-02 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01196864A true JPH01196864A (en) | 1989-08-08 |
Family
ID=12100036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63023066A Pending JPH01196864A (en) | 1988-02-02 | 1988-02-02 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01196864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009505712A (en) * | 2005-09-02 | 2009-02-12 | ザ プロクター アンド ギャンブル カンパニー | How to measure skin moisture |
-
1988
- 1988-02-02 JP JP63023066A patent/JPH01196864A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009505712A (en) * | 2005-09-02 | 2009-02-12 | ザ プロクター アンド ギャンブル カンパニー | How to measure skin moisture |
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