JPH0118583B2 - - Google Patents
Info
- Publication number
- JPH0118583B2 JPH0118583B2 JP18548684A JP18548684A JPH0118583B2 JP H0118583 B2 JPH0118583 B2 JP H0118583B2 JP 18548684 A JP18548684 A JP 18548684A JP 18548684 A JP18548684 A JP 18548684A JP H0118583 B2 JPH0118583 B2 JP H0118583B2
- Authority
- JP
- Japan
- Prior art keywords
- power chip
- package
- dielectric plate
- electrode
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 17
- 230000005496 eutectics Effects 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52929583A | 1983-09-06 | 1983-09-06 | |
US529295 | 1990-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6094742A JPS6094742A (ja) | 1985-05-27 |
JPH0118583B2 true JPH0118583B2 (de) | 1989-04-06 |
Family
ID=24109306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18548684A Granted JPS6094742A (ja) | 1983-09-06 | 1984-09-06 | 密封式電力チツプ用パツケ−ジ |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS6094742A (de) |
CA (1) | CA1216960A (de) |
DE (1) | DE3432449A1 (de) |
GB (1) | GB2146174B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5148264A (en) * | 1990-05-02 | 1992-09-15 | Harris Semiconductor Patents, Inc. | High current hermetic package |
US5446316A (en) * | 1994-01-06 | 1995-08-29 | Harris Corporation | Hermetic package for a high power semiconductor device |
FR2793350B1 (fr) * | 1999-05-03 | 2003-08-15 | St Microelectronics Sa | Protection d'une puce semiconductrice |
DE10156626A1 (de) * | 2001-11-17 | 2003-06-05 | Bosch Gmbh Robert | Elektronische Anordnung |
US7138708B2 (en) | 1999-09-24 | 2006-11-21 | Robert Bosch Gmbh | Electronic system for fixing power and signal semiconductor chips |
DE19950026B4 (de) * | 1999-10-09 | 2010-11-11 | Robert Bosch Gmbh | Leistungshalbleitermodul |
US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
US6703707B1 (en) | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP4479121B2 (ja) | 2001-04-25 | 2010-06-09 | 株式会社デンソー | 半導体装置の製造方法 |
US8018056B2 (en) * | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
CN111146152B (zh) * | 2019-10-30 | 2021-09-10 | 苏师大半导体材料与设备研究院(邳州)有限公司 | 一种半导体封装件 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3125709A (en) * | 1960-10-17 | 1964-03-17 | Housing assembly | |
DE1815799C3 (de) * | 1968-12-19 | 1979-09-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Anordnung eines Halbleiterbauelementgehäuses |
US3646405A (en) * | 1969-01-08 | 1972-02-29 | Mallory & Co Inc P R | Hermetic seal |
DE2213915A1 (de) * | 1972-03-22 | 1973-10-04 | Siemens Ag | Gehaeuse fuer halbleitersysteme |
US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
CH660258A5 (de) * | 1983-01-20 | 1987-03-31 | Landis & Gyr Ag | Keramikgehaeuse fuer einen hybridschaltkreis. |
-
1984
- 1984-08-17 GB GB8420944A patent/GB2146174B/en not_active Expired
- 1984-08-23 CA CA000461633A patent/CA1216960A/en not_active Expired
- 1984-09-04 DE DE19843432449 patent/DE3432449A1/de active Granted
- 1984-09-06 JP JP18548684A patent/JPS6094742A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2146174A (en) | 1985-04-11 |
JPS6094742A (ja) | 1985-05-27 |
GB2146174B (en) | 1987-04-23 |
GB8420944D0 (en) | 1984-09-19 |
DE3432449A1 (de) | 1985-04-04 |
CA1216960A (en) | 1987-01-20 |
DE3432449C2 (de) | 1991-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |