JPH01177275U - - Google Patents
Info
- Publication number
- JPH01177275U JPH01177275U JP7329388U JP7329388U JPH01177275U JP H01177275 U JPH01177275 U JP H01177275U JP 7329388 U JP7329388 U JP 7329388U JP 7329388 U JP7329388 U JP 7329388U JP H01177275 U JPH01177275 U JP H01177275U
- Authority
- JP
- Japan
- Prior art keywords
- dope
- chamber
- supply device
- compartment
- argon gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002019 doping agent Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案の連続的に原料供給を行うシリ
コン単結晶製造装置に設けたドープ剤供給装置を
示す図、第２図は本考案に使用する払出器を示す
図、第３図は従来のドープ剤供給装置を示す図、
第４図は他の従来のドープ剤供給装置を示す図、
第５図は第４図のＣ部詳細図である。
１…シリコン融液、７…払出器、１２…黒鉛る
つぼ、１３…石英るつぼ、１６…チヤンバー、１
７…粒状シリコン供給装置、３０…ドープ剤供給
装置、３１…隔室、３２…アルゴンガス供給管、
３３…真空ポンプ吸引管、３４…ゲートバルブ、
３５…開口、３６…案内管、３７…ドープ剤。
Figure 1 is a diagram showing a dopant supply device installed in a silicon single crystal manufacturing apparatus that continuously supplies raw materials according to the present invention, Figure 2 is a diagram showing a dispenser used in the present invention, and Figure 3 is a conventional one. A diagram showing a dopant supply device of
FIG. 4 is a diagram showing another conventional dopant supply device;
FIG. 5 is a detailed view of section C in FIG. 4. 1...Silicon melt, 7...Dispenser, 12...Graphite crucible, 13...Quartz crucible, 16...Chamber, 1
7... Granular silicon supply device, 30... Dopant supply device, 31... Compartment, 32... Argon gas supply pipe,
33...Vacuum pump suction pipe, 34...Gate valve,
35...Opening, 36...Guiding tube, 37...Doping agent.
Claims (1)
るシリコン単結晶製造装置のドープ剤供給装置で
あつて、チヤンバー外に設けられ、アルゴンガス
供給管と真空ポンプ吸引管に接続されて減圧アル
ゴンガス雰囲気に保つことのできる隔室と、該隔
室内に設けられた、ドープ剤小片収納容器を振動
させてドープ剤小片を払いだす払出器と、前記隔
室とチヤンバー間に設けたゲートバルブと、該ゲ
ートバルブの下部のチヤンバーに設けた開口とを
備えたことを特徴とするドープ剤供給装置。 This is a dopant supply device for silicon single crystal manufacturing equipment using the Czyochralski method that continuously supplies raw materials.It is installed outside the chamber and is connected to an argon gas supply pipe and a vacuum pump suction pipe to maintain a reduced pressure argon gas atmosphere. a dope dispensing device provided in the compartment for dispensing the dope particles by vibrating a dope small piece storage container; a gate valve provided between the compartment and the chamber; and the gate valve. and an opening provided in a lower chamber of the dopant supply device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7329388U JPH01177275U (en) | 1988-06-01 | 1988-06-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7329388U JPH01177275U (en) | 1988-06-01 | 1988-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01177275U true JPH01177275U (en) | 1989-12-18 |
Family
ID=31298438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7329388U Pending JPH01177275U (en) | 1988-06-01 | 1988-06-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01177275U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013129551A (en) * | 2011-12-20 | 2013-07-04 | Shin Etsu Handotai Co Ltd | Apparatus and method for producing single crystal |
| WO2017031328A1 (en) * | 2015-08-20 | 2017-02-23 | Sunedison Semiconductor Limited | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
-
1988
- 1988-06-01 JP JP7329388U patent/JPH01177275U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013129551A (en) * | 2011-12-20 | 2013-07-04 | Shin Etsu Handotai Co Ltd | Apparatus and method for producing single crystal |
| WO2017031328A1 (en) * | 2015-08-20 | 2017-02-23 | Sunedison Semiconductor Limited | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
| US10273596B2 (en) | 2015-08-20 | 2019-04-30 | Globalwafers Co., Ltd. | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
| US10577717B2 (en) | 2015-08-20 | 2020-03-03 | Globalwafers Co., Ltd. | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
| US11085126B2 (en) | 2015-08-20 | 2021-08-10 | Globalwafers Co., Ltd. | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
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