JPH01173846A - Manufacture of thin film pressure sensor - Google Patents
Manufacture of thin film pressure sensorInfo
- Publication number
- JPH01173846A JPH01173846A JP22734087A JP22734087A JPH01173846A JP H01173846 A JPH01173846 A JP H01173846A JP 22734087 A JP22734087 A JP 22734087A JP 22734087 A JP22734087 A JP 22734087A JP H01173846 A JPH01173846 A JP H01173846A
- Authority
- JP
- Japan
- Prior art keywords
- sus630
- diaphragm
- pressure sensor
- thin film
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000004881 precipitation hardening Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 4
- 239000006104 solid solution Substances 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Chemical Vapour Deposition (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、金属ダイヤフラムを用いる薄膜圧力センサの
製造方法において、金属ダイヤフラムの製造工程の一つ
である析出硬化処理を薄膜圧力センサ部分の形成工程と
同時に行う製造方法に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention is a method for manufacturing a thin film pressure sensor using a metal diaphragm. It relates to a manufacturing method that is carried out simultaneously with the process.
（従来の技術）
圧力を検出するためのセンサは、様々な種類のものが提
案されているが、そのセンサのダイヤフラムの材質は大
別して、非金属系のものと金属系のものがある。金属系
のものは、入力の圧力範囲が大きくとれ、ダイヤフラム
自身の弾性で圧力と変位の線形的関係が得られるため多
用されている。(Prior Art) Various types of sensors for detecting pressure have been proposed, and the materials of the diaphragms of the sensors can be broadly classified into nonmetallic and metallic materials. Metal type ones are widely used because they allow a wide input pressure range and a linear relationship between pressure and displacement can be obtained due to the elasticity of the diaphragm itself.
ところで高耐圧の金属ダイヤフラムには、引張強度が高
いため、５ＵＳ８３０材が使用されることが多い。前記
５ＵＳ６３０材は、１０２０〜１０６０℃で１〜２時間
の熱処理（以下固溶化熱処理）を行う。そして、この処
理だけでは、充分な引張強度（圧力センサに必要なのは
１１０ｋｇ／ｍ ｍ’以上）が得られないため、再度５
４０〜５６０℃で４時間の熱処理（以下析出硬化処理）
を行って１２０ｋｇ／ｍｔｙ＋’を得る。Incidentally, 5US830 material is often used for high-voltage metal diaphragms because of its high tensile strength. The 5US630 material is subjected to heat treatment (hereinafter referred to as solution heat treatment) at 1020 to 1060°C for 1 to 2 hours. Then, because sufficient tensile strength (more than 110 kg/mm' is required for a pressure sensor) cannot be obtained with this treatment alone,
Heat treatment at 40-560℃ for 4 hours (hereinafter referred to as precipitation hardening treatment)
to obtain 120 kg/mty+'.
ダイヤフラムなどの形に加工するのは、固溶化熱処理後
あるいは、析出硬化処理後である。It is processed into a shape such as a diaphragm after solution heat treatment or precipitation hardening treatment.
（発明が解決しようとする問題点）
第３図に示すように、薄膜圧力センサは、上記のような
処理を施した５ＵＳ６３０を加工したダイヤフラム１０
０上に、絶縁膜１０１ 、感圧抵抗ｐｓ１０２、金属配
線１０３を各々積層、バタニングして作製する。前記絶
縁膜１０１ 、感圧抵抗層１０２を積層する工程は各々
５４０℃で２時間の工程を含んでいる。(Problems to be Solved by the Invention) As shown in FIG.
0, an insulating film 101, a pressure sensitive resistor ps102, and a metal wiring 103 are each laminated and battened. The process of laminating the insulating film 101 and the pressure-sensitive resistance layer 102 each includes a process of 2 hours at 540°C.
ところが５ＵＳ６３０は、必要以上の析出硬化処理を行
うと、オーバーアニールとよばれる状態となり、次の表
１に示す通り５ＵＳ６３０の引張強度は逆に減少してい
ってしまう。However, when 5US630 is subjected to precipitation hardening treatment more than necessary, it enters a state called over-annealing, and as shown in Table 1 below, the tensile strength of 5US630 actually decreases.
つまり、析出硬化処理後の５ＵＳ６３０ダイヤフラムに
、薄膜圧力センサを形成していくど同ダイヤフラムはオ
ーバーアニールとなり、引張強度は減少してしまうため
、圧力センサとして使用したときに、塑性変形を起こし
てしまい実用不可能となる。In other words, when a thin film pressure sensor is formed on a 5US630 diaphragm after precipitation hardening, the diaphragm becomes over-annealed and its tensile strength decreases, causing plastic deformation when used as a pressure sensor, making it difficult to put into practical use. It becomes impossible.
本発明は、上記問題点に鑑みなされたもので析出硬化処
理と、薄膜圧力センサを作製する工程を同時に行うこと
により、オーバーアニールすることがないため、引張強
度の大きいダイヤフラムを提供することを目的とする。The present invention was devised in view of the above problems, and aims to provide a diaphragm with high tensile strength since over-annealing is not caused by performing precipitation hardening treatment and the process of manufacturing a thin film pressure sensor at the same time. shall be.
（問題点を解決する手段及び作用）
固溶化熱処理を行ったあとの５ＵＳ６３０をダイヤフラ
ムに加工し、次に、薄膜圧力センサを作製する。絶縁膜
、感圧抵抗層を積層する際各々５４０℃で２時間の工程
を通ることにより析出硬化処理も同時に行うことができ
る。(Means and actions for solving the problem) 5US630 subjected to solution heat treatment is processed into a diaphragm, and then a thin film pressure sensor is manufactured. When laminating the insulating film and the pressure-sensitive resistance layer, precipitation hardening treatment can be performed at the same time by passing through a process at 540° C. for 2 hours each.
このようにして、５ＵＳ６３０にオーバーアニールのな
い析出硬化処理を施すことができるため、高い引張強度
を得ることができる。In this way, 5US630 can be subjected to precipitation hardening treatment without over-annealing, and therefore high tensile strength can be obtained.
（実施例）
以下、図面に従って薄膜圧力センサの製造方法を説明す
る。(Example) Hereinafter, a method for manufacturing a thin film pressure sensor will be described with reference to the drawings.
第１図は、本発明に係る薄膜圧力センサの製造工程の工
程図である。FIG. 1 is a process diagram of the manufacturing process of a thin film pressure sensor according to the present invention.
まず、５ＵＳ６３０材を１０２０〜１０６０℃で２時間
、固溶化熱処理を行う。First, 5US630 material is subjected to solution heat treatment at 1020 to 1060°C for 2 hours.
次にこの固溶化熱処理を行った５ＵＳ６３０を、ダイヤ
フラムの形に切削加工する。この時の５ＵＳ６３０は、
析出硬化処理以前なので、切削加工しやすい。析出硬化
処理を行った５ＵＳ６３０のかたさは、ＨＢ４２０であ
り、析出硬化処理以前の５ＵＳ６３０のかたさは、Ｈ８
３４１以下である。よって切削加工時の工数が低減され
、さらに、加工機の摩耗を極めて少なくすることができ
る。Next, the solution heat treated 5US630 is cut into the shape of a diaphragm. 5US630 at this time is
Since it has not undergone precipitation hardening treatment, it is easy to cut. The hardness of 5US630 after precipitation hardening is HB420, and the hardness of 5US630 before precipitation hardening is H8.
341 or less. Therefore, the number of man-hours during cutting can be reduced, and furthermore, the wear of the processing machine can be extremely reduced.
この後、ダイヤフラムに絶縁膜として酸化シリコンをプ
ラズマＣＶＤ法で５４０℃２時間積層し、更に感圧抵抗
層として多結晶シリコンをプラズマＣＶＤ法で５４０℃
２時間積層する。After this, silicon oxide was deposited on the diaphragm as an insulating film at 540°C for 2 hours using plasma CVD, and then polycrystalline silicon was deposited as a pressure-sensitive resistance layer at 540°C using plasma CVD.
Layer for 2 hours.
この工程により、５ＵＳ８３０は析出硬化処理を受けた
ことになるので、引張強度は、１２０ｋｇ／ｍ＆となり
、薄膜圧力センサのダイヤフラムに必要な引張強度が得
られ、かつ、第２図に示すようにオーバーアニールを受
けることがないので、引張強度が低下することもない。Through this process, 5US830 has been subjected to precipitation hardening treatment, so its tensile strength is 120 kg/m2, which is the tensile strength necessary for the diaphragm of a thin film pressure sensor. Since it is not annealed, the tensile strength does not decrease.
最後に、電子ビーム蒸着法でアルミニウムを蒸着、配線
を形成する。Finally, aluminum is deposited using electron beam evaporation to form wiring.
以上の工程で薄膜圧力センサを作製することができる。A thin film pressure sensor can be manufactured through the above steps.
（発明の効果）
ＳＵＳ６３０で作製したダイヤフラムの析出硬化処理を
、薄膜圧力センサの絶縁膜と感圧抵抗層を積層する工程
と同時に行うことにより（１）ＳＵＳ６３０へのオーバ
ーアニールがないため引張強度の低下がない。(Effects of the invention) By performing the precipitation hardening treatment of the diaphragm made of SUS630 at the same time as the process of laminating the insulating film and pressure-sensitive resistance layer of the thin film pressure sensor, (1) the tensile strength is improved because there is no over-annealing of the SUS630; There is no decline.
（２）析出硬化処理の工数を低減できる。(2) The number of steps required for precipitation hardening treatment can be reduced.
（３）ＳＵＳ６３０の切削加工はかたさが低い時に行う
ので、工数が低減され（第
２図参照）さらに加工機の摩耗を極め
て少なくすることができる等の効果が
ある。(3) Since cutting of SUS630 is carried out when the hardness is low, the number of man-hours is reduced (see Fig. 2), and there are also effects such as extremely reducing wear on the processing machine.
第１図は、本発明薄膜圧力センサの工程図第２図は、本
発明及び従来の同工程の温度プロファイル図
第３図は、薄膜圧力センサの概念図
特許出願人 株式会社 小松製作所
代理人（弁理士）岡 １）和 喜
第１図
第２図 時間（
ｈ ｒ）第３図（ｂ）
手続補正書（方式）
％式％
１、事件の表示 昭和６２年特許願第２２７３４０
号２、発明の名称
薄膜圧力センサの製造方法
３、補正をする者
事件との関係 特許出願人
電話（０３）５８４−７１１１
４、補正命令の日付（発送口）
平成 １年 １月３１日Fig. 1 is a process diagram of the thin film pressure sensor of the present invention Fig. 2 is a temperature profile diagram of the same process of the present invention and the conventional process Fig. 3 is a conceptual diagram of the thin film pressure sensor Patent applicant Komatsu Ltd. Agent ( Patent attorney) Oka 1) Kazuki Figure 1 Figure 2 Time (
h r) Figure 3 (b) Procedural amendment (method) % formula % 1. Indication of case 1988 Patent Application No. 227340
No. 2. Name of the invention Method of manufacturing a thin film pressure sensor 3. Person making the amendment Relationship to the case Patent applicant Telephone: (03) 584-7111 4. Date of amendment order (shipping port) January 31, 1999
Claims (1)
金属ダイヤフラムの析出硬化処理を、薄膜圧力センサ形
成工程と同時に行う薄膜圧力センサの製造方法。In a thin film pressure sensor using a metal diaphragm,
A method for manufacturing a thin film pressure sensor in which precipitation hardening treatment of a metal diaphragm is performed simultaneously with the thin film pressure sensor forming process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22734087A JPH01173846A (en) | 1987-09-10 | 1987-09-10 | Manufacture of thin film pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22734087A JPH01173846A (en) | 1987-09-10 | 1987-09-10 | Manufacture of thin film pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01173846A true JPH01173846A (en) | 1989-07-10 |
Family
ID=16859274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22734087A Pending JPH01173846A (en) | 1987-09-10 | 1987-09-10 | Manufacture of thin film pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01173846A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03260072A (en) * | 1990-03-12 | 1991-11-20 | Ngk Insulators Ltd | Elastic deformable body and corrosion-resistant valve using the same |
| US5770883A (en) * | 1995-09-19 | 1998-06-23 | Nippondenso Co., Ltd. | Semiconductor sensor with a built-in amplification circuit |
| JP2004125516A (en) * | 2002-09-30 | 2004-04-22 | Nagano Keiki Co Ltd | Apparatus for detecting amount of strain, and method for manufacturing the same |
| JP2007101563A (en) * | 1998-04-28 | 2007-04-19 | Saginomiya Seisakusho Inc | Water level sensor using hall element |
| EP2759607A1 (en) | 2013-01-25 | 2014-07-30 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| JP2017116337A (en) * | 2015-12-22 | 2017-06-29 | 長野計器株式会社 | Manufacturing method of pressure sensor |
-
1987
- 1987-09-10 JP JP22734087A patent/JPH01173846A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03260072A (en) * | 1990-03-12 | 1991-11-20 | Ngk Insulators Ltd | Elastic deformable body and corrosion-resistant valve using the same |
| US5770883A (en) * | 1995-09-19 | 1998-06-23 | Nippondenso Co., Ltd. | Semiconductor sensor with a built-in amplification circuit |
| JP2007101563A (en) * | 1998-04-28 | 2007-04-19 | Saginomiya Seisakusho Inc | Water level sensor using hall element |
| JP2004125516A (en) * | 2002-09-30 | 2004-04-22 | Nagano Keiki Co Ltd | Apparatus for detecting amount of strain, and method for manufacturing the same |
| US7331102B2 (en) | 2002-09-30 | 2008-02-19 | Nagano Keiki Co., Ltd. | Apparatus for detecting an amount of strain and method for manufacturing same |
| EP2759607A1 (en) | 2013-01-25 | 2014-07-30 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| US9523620B2 (en) | 2013-01-25 | 2016-12-20 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| JP2017116337A (en) * | 2015-12-22 | 2017-06-29 | 長野計器株式会社 | Manufacturing method of pressure sensor |
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