JPH01170082A - Double-hetero structure semiconductor laser with device - Google Patents
Double-hetero structure semiconductor laser with deviceInfo
- Publication number
- JPH01170082A JPH01170082A JP32715487A JP32715487A JPH01170082A JP H01170082 A JPH01170082 A JP H01170082A JP 32715487 A JP32715487 A JP 32715487A JP 32715487 A JP32715487 A JP 32715487A JP H01170082 A JPH01170082 A JP H01170082A
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- Prior art keywords
- layer
- optical coupling
- laser
- active layer
- substrate
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 230000003287 optical effect Effects 0.000 claims abstract description 62
- 230000008878 coupling Effects 0.000 claims abstract description 51
- 238000010168 coupling process Methods 0.000 claims abstract description 51
- 238000005859 coupling reaction Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005253 cladding Methods 0.000 claims description 31
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 8
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- SZIKMLZMXITMNT-UHFFFAOYSA-N OCCO.OO.OS(O)(=O)=O Chemical compound OCCO.OO.OS(O)(=O)=O SZIKMLZMXITMNT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は情報端末用高出力半導体レーザ装置に係り、特
に高光密度によるレーザ端面部の結晶溶融を防止し、高
信頼性を持たせる構造と製法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high-power semiconductor laser device for information terminals, and particularly to a structure that prevents crystal melting at the laser end face due to high optical density and provides high reliability. Regarding the manufacturing method.
半導体レーザ装置の高光密度による劣化現象のうち、最
も顕著なのはレーザ出力端面の溶融劣化である。このう
ち光出力が高くなると半導体レーザの出力端面が瞬時に
破壊されるという現象については、レーザ出力端面付近
をレーザの発振波長に対して透明化することにより、そ
の破壊限界出力が大幅に増加することが知られている（
例えばアプライド・フィジクス・レター３４巻・６３７
頁（１９７９） （Ａｐｐｌ、 Ｐｈｙｓ、 Ｌｅｔｔ
、 ＶＯＩ ３４Ｎａ１５ （１９７９） ６３７ｐ）
およびジェイ・ジェイ・ニー・ピー、１７巻・８６５頁
（１９７８）（Ｊ、Ｊ、Ａ、Ｐ、１７，８６５ （１
９７８））。Among the deterioration phenomena caused by high optical density of semiconductor laser devices, the most remarkable is the melting deterioration of the laser output end face. Regarding the phenomenon in which the output end face of a semiconductor laser is instantaneously destroyed when the optical output increases, the destruction limit output can be significantly increased by making the vicinity of the laser output end face transparent to the laser's oscillation wavelength. It is known(
For example, Applied Physics Letters Volume 34, 637
(1979) (Appl, Phys, Lett
, VOI 34Na15 (1979) 637p)
and J.J.N.P., vol. 17, p. 865 (1978) (J, J, A, P, 17,865 (1
978)).
このレーザ出力端面付近を透明化する一方法として、従
来レーザ出力端面付近となる領域に透明な半導体結晶を
埋込み、この領域内にへき開法がドライ加工法によって
反射面を作る方法が考えられていた。One way to make the area near the laser output end face transparent is to embed a transparent semiconductor crystal in the area near the laser output end face, and create a reflective surface in this area by dry cleaving. .
上記従来技術では端面透明領域を大きくすると光がレー
ザ端面で反射して再び活性層と結合する効率は比較的小
さくなるためレーザの発振しきい値が相対的大きくなっ
てしまう。また、ドライ加工で端面を形成する場合には
、加工装置が複雑になる他、ドライダメージの影響や表
面の凹凸の影響のためにレーザの信頼性がそこなわれる
といった問題があった。In the above-mentioned conventional technology, when the end face transparent region is enlarged, the efficiency with which light is reflected at the laser end face and recombined with the active layer becomes relatively small, and thus the laser oscillation threshold becomes relatively large. Furthermore, when forming the end face by dry processing, there are problems in that the processing equipment becomes complicated and the reliability of the laser is impaired due to the influence of dry damage and the influence of surface irregularities.
本発明の目的は上記従来技術の問題点をなくしつまり、
より簡便な作製法により信頼度の高い高出力半導体レー
ザ装置およびその製造方法を提供せんとするものである
。The purpose of the present invention is to eliminate the above-mentioned problems of the prior art, namely,
The present invention aims to provide a highly reliable high-power semiconductor laser device and its manufacturing method using a simpler manufacturing method.
（問題点を解決するための手段〕
上記目的は、レーザ共振器内の少なくとも一方の端面部
に光を伝播する光結合層を形成し、活性層を光結合層に
対しクラッド層を介して光結合する位置にくるように形
成することにより達成できる。(Means for Solving the Problems) The above object is to form an optical coupling layer that propagates light on at least one end face in the laser resonator, and to connect the active layer to the optical coupling layer through the cladding layer. This can be achieved by forming it so that it is located at the position where it will be joined.
上記構造は例えば、レーザ活性層を端面部近傍で段差に
より消滅させクラッド層、つまり透明部分を介して更に
光結合層と結合させることにより実現できる。すなわち
、第１図において。The above structure can be realized, for example, by eliminating the laser active layer by a step near the end face and further coupling it to the optical coupling layer via the cladding layer, that is, the transparent part. That is, in FIG.
ａ：基板段差
す二基板−光結合層間距離
Ｃ：光結合層−活性層間距離 として
ａ＋ｂ＝ｂ＋ｃつまりａ＝ｃとすれば容易に実現できる
。また正常なレーザ発振を得るためにはｃ＞１μｍ、ｂ
ン１．５μｍが必要である。従ってａ＞１μｍである。a: Distance between the two substrates and the optical coupling layer where the substrates are stepped C: Distance between the optical coupling layer and the active layer This can be easily realized by setting a+b=b+c, that is, a=c. In addition, in order to obtain normal laser oscillation, c > 1 μm, b
A thickness of 1.5 μm is required. Therefore, a>1 μm.
またこの場合、レーザ活性層と光結合層の一致度は±０
．１μ以下が望ましく、ズレが大きくなる程、結合効率
は悪化してレーザのしきい電流値が上昇してしまう。In this case, the degree of coincidence between the laser active layer and the optical coupling layer is ±0.
．． A value of 1 μm or less is desirable, and as the deviation becomes larger, the coupling efficiency deteriorates and the threshold current value of the laser increases.
また、レーザ光の光結合層内部での吸収損失を低減する
ため、光結合層厚みは活性層厚みより少なくとも厚くす
る。また光結合領域での光スポツト径を増大させるため
光結合層の屈折率は活性層のそれよりも小さくする。Further, in order to reduce absorption loss of laser light inside the optical coupling layer, the thickness of the optical coupling layer is made at least thicker than the thickness of the active layer. Further, in order to increase the optical spot diameter in the optical coupling region, the refractive index of the optical coupling layer is made smaller than that of the active layer.
この様な構造を持つレーザ装置ではレーザ端面に透明層
が容易に形成できるため、高出力動作時。Laser devices with this type of structure can easily form a transparent layer on the laser end face during high output operation.
での端面破壊限界出力が大幅に上昇するため、レーザ装
置の長寿命特性が得られる。またレーザ活性層の段差部
は出来るだけ急峻に形成される必要がある。これは従来
の液相成長法では基板メルトバック等の影響で急峻性は
得られないが、有機金属熱分解法や分子線エピタキシャ
ル法では基板形状をそのまま維持して成長するので比較
的容易に急峻な段差が得られる。これによりレーザ光は
折れ曲り部分で効率良く光結合層へ導波される。なお、
光結合層がない場合はレーザ光が透明層内で広がってし
まうことによりレーザ特性を著しく劣化させるため、光
結合層の存在は不要不可欠である。Since the critical output for edge failure at the end face is significantly increased, long-life characteristics of the laser device can be obtained. Further, the step portion of the laser active layer needs to be formed as steeply as possible. With conventional liquid phase growth, it is not possible to achieve steepness due to the effects of substrate meltback, etc., but with organometallic pyrolysis and molecular beam epitaxial methods, the substrate shape is maintained as it is, so it is relatively easy to achieve steepness. You can get a big step. As a result, the laser light is efficiently guided to the optical coupling layer at the bent portion. In addition,
If there is no optical coupling layer, the laser beam will spread within the transparent layer, significantly deteriorating the laser characteristics, so the presence of the optical coupling layer is essential.
また、本発明による半導体レーザ装置の製造方法の一例
は以下のようになるものである。Further, an example of a method for manufacturing a semiconductor laser device according to the present invention is as follows.
ＧａＡｓ（１００）基板にエツチングによりストライプ
状の溝を形成した後、親基板上に活性層と類似構造の光
結合層を内包する第１クラッド層。After forming striped grooves on a GaAs (100) substrate by etching, a first cladding layer containing an optical coupling layer having a structure similar to that of the active layer is formed on a parent substrate.
レーザ活性層、第２クラツドから成るダブルヘテロ構造
の多層結晶を形成する。この時結晶のストライプ状凸部
もしくは凹部に形成された光結合層と、凹部もしくは凸
部に形成されたレーザ活性層がほぼ同一平面内に位置す
る様に、あらかじめ溝の深さと第１クラッド層の厚さを
決めておく、この様な構造を持つ多層結晶にＰｅｎ電極
を形成、へき開法によってレーザチップとすることによ
り、容易にレーザ端面にレーザ波長に対して透明でかつ
光導波結合機構を持つレーザ装置が得られる。A double heterostructure multilayer crystal consisting of a laser active layer and a second cladding is formed. At this time, the depth of the groove and the first cladding layer are adjusted in advance so that the optical coupling layer formed in the striped convex part or concave part of the crystal and the laser active layer formed in the concave part or convex part are located in almost the same plane. By forming a Pen electrode on a multilayer crystal with such a structure and making it into a laser chip by the cleavage method, it is easy to create an optical waveguide coupling mechanism that is transparent to the laser wavelength and on the laser end face. You can obtain a laser device with
高出力レーザ装置は、レーザ活性層を薄くして光スポツ
ト径を広げたり、活性層を多重量子井戸構造として低し
きい値化することにより実現するが、本発明の方法を適
用することにより従来の更に２倍の光出力が得られる。High-power laser devices can be realized by making the laser active layer thinner to widen the optical spot diameter or by making the active layer a multi-quantum well structure to lower the threshold voltage. Further, twice the optical output can be obtained.
実施例１
以下、本発明の実施例１を第２図（ａ）〜第２図（ｃ）
により詳細に説明する。Example 1 Hereinafter, Example 1 of the present invention will be described as shown in FIGS. 2(a) to 2(c).
This will be explained in more detail below.
まずＳｉドープｎ ＝ Ｉ Ｘ １０１８ｃｍ−３の面
方位（１００）ＧａＡｓ基板１にＳｉ０ｇ膜を堆積し。First, a Si0g film was deposited on a Si-doped GaAs substrate 1 with a surface orientation of (100) and n=I.times.10.sup.18 cm.sup.-3.
ホトマスクを用いレーザ活性層のストライプ方向と直角
方向に幅〜３０μｍのＳ ｉ Ｏ，膜ストライプ２を形
成する。しかる後、硫酸−過酸化水素−エチレングリコ
ール比が１＝２−二７のエッチ液で約１μｍの段差をも
つストライプ状凸部３を形成する（第２図（ａ）。）次
いでこの基板を有機金属熱分解炉にセットし、厚さ１．
５μｍのｎ型Ｏａ６，６Ａ ｌＯ，６Ａ ｓ第１クラッ
ド層４（ＳｓドープＩ Ｘ １０”ｃｍ−３） 、厚さ
４５ｎｍのＧ ａｏ、ｅ４Ａ １ｏ、ｘｇＡ ｓ光結合
層５（Ｓｓドープ１ｘ １０１８ｃｍ−’）、厚さ１μ
ｍのｎ型ＯａＱ、 ｓ Ａ ｌ（１，６Ａ８第１クラッ
ド層６（ＳｅドープＩ Ｘ １０１８ｃｍ−３） 、厚
さ５０ｎｍのＧ ａｏ、ａｇＡ ｌｏ、ｕ４Ａ ｓレー
ザ活性層７（ノンドープ）、厚さ１μｍのｐ型Ｇ ａ□
、６Ａ １０．ＳＡ ８第２クラッド層８（Ｚｎドープ
８ Ｘ １０”ｃｍ−３） 、厚さ０．５μｍのｎ型Ｇ
ａＡｓキャップ層９（ＳｓドープＩ Ｘ １０”ｃｍ−
３）を順次結晶成長する（第２図（ｂ））。A SiO film stripe 2 having a width of 30 μm is formed in a direction perpendicular to the stripe direction of the laser active layer using a photomask. Thereafter, striped protrusions 3 having a step height of approximately 1 μm are formed using an etchant having a sulfuric acid-hydrogen peroxide-ethylene glycol ratio of 1=2-27 (FIG. 2(a)). Set in an organometallic pyrolysis furnace to a thickness of 1.
5 μm n-type Oa6,6A 1O,6A s first cladding layer 4 (Ss doped I x 10” cm−3), 45 nm thick Gao, e4A 1o, xgA s optical coupling layer 5 (Ss doped 1× 10” cm− '), thickness 1μ
m n-type OaQ, s Al (1,6A8 first cladding layer 6 (Se doped I x 1018 cm-3), 50 nm thick Gao, agA lo, u4A s laser active layer 7 (non-doped), thickness 1μm p-type Ga□
, 6A 10. SA 8 second cladding layer 8 (Zn doped 8 x 10”cm-3), 0.5 μm thick n-type G
aAs cap layer 9 (Ss doped I x 10"cm-
3) are sequentially grown as crystals (FIG. 2(b)).
この時基板１上の凸部３は多層成長後もそのまま維持さ
れるため１次のＺｎイオン打込みによるストライプ形成
時に合せマークとして用いることができる。このように
イオン打込みストライプを有する多層結晶にｐ型電極１
０、ｎ型電極１１を形成したのち、第２図（ｂ）の−点
鎖線部でへき開を行ない、第２図（ｃ）のレーザチップ
を得る。At this time, since the convex portions 3 on the substrate 1 are maintained as they are even after multilayer growth, they can be used as alignment marks when forming stripes by primary Zn ion implantation. In this way, a p-type electrode 1 is placed on the multilayer crystal with ion-implanted stripes.
After forming the 0.0 and n-type electrodes 11, cleavage is performed along the dashed line in FIG. 2(b) to obtain the laser chip shown in FIG. 2(c).
このチップに電圧を印加したところ、波長７８０ｎｍ、
しきい電流値的５０ｍＡで発振した。第３図に本実施例
の電流−光出力特性の一例を示す。When voltage was applied to this chip, the wavelength was 780 nm,
It oscillated at a threshold current value of 50 mA. FIG. 3 shows an example of the current-light output characteristics of this example.
図に点線で示したように活性層が光出力端面まで連続し
ている従来の半導体レーザ装置では高光出力動作時に光
出力端面がしばしば破壊されて劣化するが、本実施例の
半導体レーザ装置はレーザ出力端面が劣化しにくい構造
であるため第３図の実線で示すように高光出力でも安定
な動作が得られた。なお本実施例のレーザ装置を光出力
５０ｍＷ、周囲温度７０℃で連続動作させたところ、１
０００時間経過しても劣化が１１８１９されなかった。As shown by the dotted line in the figure, in conventional semiconductor laser devices in which the active layer is continuous up to the light output end face, the light output end face is often destroyed and deteriorated during high light output operation, but the semiconductor laser device of this example Since the output end face is resistant to deterioration, stable operation was achieved even at high optical output, as shown by the solid line in FIG. Note that when the laser device of this example was operated continuously at an optical output of 50 mW and an ambient temperature of 70°C, 1
No deterioration occurred even after 11,819 hours.
実施例２ 本発明の実施例２の半導体レーザ装置を第４図。Example 2 FIG. 4 shows a semiconductor laser device according to a second embodiment of the present invention.
第５図（ａ）および第５図（ｂ）により説明する。This will be explained with reference to FIGS. 5(a) and 5(b).
第４図は光の進行方向に平行な方向の断面図、第５図（
ａ）および第５図（ｂ）は各々第４図のＡ−Ａ’、Ｂ−
Ｂ’部つまり光と垂直方向の断面図を示している。Figure 4 is a cross-sectional view parallel to the direction of light propagation, Figure 5 (
a) and FIG. 5(b) are AA' and B- of FIG. 4, respectively.
It shows part B', that is, a cross-sectional view in a direction perpendicular to the light.
Ｓｉドープｎ型Ｉ Ｘ １０”ｃｍ−’の（１００）Ｇ
ａ Ａ ｓ基板２１上に５ｉｎ２マスクにより幅３０
μｍのストライプ状の凸部２０を形成した後。Si-doped n-type I x 10"cm-' (100)G
a A s on the substrate 21 with a width of 30 mm using a 5in2 mask
After forming the μm striped convex portions 20.
有機金属熱分解炉中で厚さ１．５μｍのｎ型Ｏａｏ、６
Ａ ｌｏ、６Ａ ｓ第１クラッド層２２（Ｓｅドープｌ
Ｘ １０１８ｃｍ−３） 、厚さ４ｎｍのＧａｏ、ｓ
ｓＡ ｌＯ，ｏ？Ａ ｓ Ｊ＆子井戸層と厚さ４ｎｍの
Ｇａｏ４Ａ １０．３Ａ ｓ Ｉｋ子障壁層から成る全
厚さ４４ｎｍのｎ型光結合層２３．厚さ１μｍのｎ型Ｇ
ａ（、，５Ａ１ｏ、ｓＡｓ第１クラッド層２４（Ｓｓド
ープＩＸ １０１８ａｍ−’）、厚さ５ｎｍのＧ ａ
ｏ、 ｇ３ Ａ １（１，（１７Ａｓ量子井戸層と厚さ
４ｎｍのＧ ａＱ７Ａ ｌｏ、 ３ Ａ ｓ量子障壁層
から成る全厚さ５０ｎｍのノンドープ多重量子井戸活性
層２５、厚さ０．３５μｍのｐ型Ｇ ａ（１，６Ａ Ｉ
（１，６Ａ ｓ第２クラッド層２６ （Ｚｎドープ、８
Ｘ １０１７ｃｍ”３） 、厚さ０．６μｍのｎ型０
ａＡｓ電流ブロック層２７（Ｓθドープ、４×１０１８
０ｍ゛３）を順次結晶成長する０次いで本多層結晶を炉
から取出し、写真食刻法とＲＩＥ（反応性イオンエツチ
ング）法によりｎ型Ｇ ａ Ａ ｓ電流ブロック層２７
を選択的にエッチ除去し幅約５μｍのストライブ溝を形
成する。この後、再び熱分解炉中でｐ型Ｇａｏ、、、Ａ
ｌｏ５Ａｓクラッド層２８ （Ｚｎドープ、２ Ｘ １
０１８ｃｍ”３） 、 Ｐ ”型ＧａＡｓキャップ層２
９ （Ｚｎドープ、２×ＩＣシ・−一・）を連続成長す
る。n-type OAO with a thickness of 1.5 μm in an organometallic pyrolysis furnace, 6
A lo, 6A s first cladding layer 22 (Se doped l
x 1018cm-3), 4nm thick Gao,s
sA lO, o? 23. An n-type optical coupling layer with a total thickness of 44 nm consisting of an A s J & well layer and a 4 nm thick Gao4A 10.3A s Ik barrier layer. 1μm thick n-type G
a(,,5A1o, sAs first cladding layer 24 (Ss doped IX 1018am-'), 5 nm thick Ga
o, g3A 1(1, Type G a(1,6A I
(1,6A s second cladding layer 26 (Zn doped, 8
x 1017cm”3), 0.6μm thick n-type 0
aAs current blocking layer 27 (Sθ doped, 4×1018
Next, the multilayer crystal is taken out of the furnace and an n-type GaAs current blocking layer 27 is formed by photolithography and RIE (reactive ion etching).
is selectively etched away to form stripe grooves with a width of about 5 μm. After this, p-type Gao, A
lo5As cladding layer 28 (Zn doped, 2×1
018cm"3), P" type GaAs cap layer 2
9 (Zn-doped, 2×IC Si-1) was continuously grown.
この後、ｐ型電極３０．ｎ型電極３１を各々蒸着法によ
り形成する０次いでストライプ状凸部２０を一点鎖線部
でへき開し、チップ化する。After this, the p-type electrode 30. The n-type electrodes 31 are each formed by vapor deposition, and the striped convex portions 20 are then cleaved along the dashed-dotted lines to form chips.
第４図のＡ−Ａ’、Ｂ−Ｂ’部の断面図を各々第５図（
ａ）、第５図（ｂ）に示す、第５図（ａ）はレーザ共振
器内の断面図で、第５図（ｂ）は端面透明化部の断面図
である。図示するように第５図（ａ）の多重量子井戸活
性層２５と第５図（ｂ）の光結合層２３とは同一平面上
に位置している。Figure 5 shows cross-sectional views of sections AA' and BB' in Figure 4.
FIG. 5(a) is a sectional view of the interior of the laser resonator, and FIG. 5(b) is a sectional view of the end face transparent portion. As shown, the multi-quantum well active layer 25 in FIG. 5(a) and the optical coupling layer 23 in FIG. 5(b) are located on the same plane.
またｎ１型ＧａＡｓ電流ブロック層２７によりレーザ光
は効率良くストライブ内に屈折率型光導波される。本構
造をもつチップに電圧を印加したところ、波長７８０ｎ
ｍ、しきい電流値４０ｍＡで発振した。レーザ光出力は
１００ｍＷまで高出力動作した。また光出力５０ｍＷ、
周囲温度７０℃で連続動作させたところ、１０００時間
以上で安定に動作、劣化は観測されていない。Furthermore, the laser light is efficiently guided into the stripe by the n1 type GaAs current blocking layer 27 in a refractive index type. When a voltage was applied to a chip with this structure, the wavelength was 780 nm.
m, oscillated at a threshold current value of 40 mA. The laser light output was operated at high output up to 100 mW. In addition, the optical output is 50mW,
When operated continuously at an ambient temperature of 70°C, it operated stably for over 1000 hours, with no deterioration observed.
また活性層が上記実施例と同じで、光結合層が厚さ４４
ｎ ｒｎのｎ型Ｇ ａｏ、ｏａＡ ｌｏ、ｘｓＡ Ｓ
を作製、評価したところ、同様の効果が１ｌｌ）Ｉｌ’
ｌされた。In addition, the active layer is the same as the above example, and the optical coupling layer has a thickness of 44 mm.
n rn n-type G ao, oaA lo, xsA S
When Il' was prepared and evaluated, similar effects were found.
It was done.
実施例３
本発明の実施例３の半導体レーザ装置を第６図、第７図
（ａ）および第７図（ｂ）により説明する。Example 3 A semiconductor laser device according to Example 3 of the present invention will be explained with reference to FIGS. 6, 7(a), and 7(b).
第６図は光の進行方向に平行方向の断面図、第７図（ａ
）および第７図（ｂ）は各々第６図のＡ−Ａ’、Ｂ−Ｂ
’つまり光と垂直方向の断面図を示している。Figure 6 is a sectional view parallel to the direction of light propagation, Figure 7 (a
) and FIG. 7(b) are AA' and B-B in FIG. 6, respectively.
'In other words, it shows a cross-sectional view in the direction perpendicular to the light.
本実施例では、段差としてあらかじめｎ０型ＧａＡｓ半
導体基板４１にストライプ状凹部４０を形成した。しか
る後熱分解炉中で厚さ１．５μｍのｎ型Ｇａｏ、、Ａｌ
ｏ５Ａｓ第１クラッド層４２（Ｓｓドープ、１×１０１
８ｃｍ−３）、厚さ５ｎｍのＧ ａ ０．９３ Ａ ｌ
ｏ、 ｏ７ Ａ ｓ量子井戸層と厚さ４ｎｍのＧａｏ
４ＡｌＯ，３Ａｓ量子障壁層から成る全厚さ５０ｎｍの
ノンドープ多重量子井戸活性層４３、厚さ１μｍのｐ型
Ｇ ａｌ）、５Ａ ｌｏ、６Ａ ｓ第２クラッド層４４
（Ｚ ｎドープ、 ８ Ｘ １０１７ｃｍ−３）。In this example, a striped recess 40 was formed in advance in the n0 type GaAs semiconductor substrate 41 as a step. After that, in a pyrolysis furnace, a 1.5 μm thick n-type GaO, Al
o5As first cladding layer 42 (Ss doped, 1×101
8 cm-3), 5 nm thick Ga 0.93 Al
o, o7 A s quantum well layer and 4 nm thick GaO
A non-doped multiple quantum well active layer 43 with a total thickness of 50 nm consisting of 4AlO, 3As quantum barrier layers, a 1 μm thick p-type Gal), 5A lo, 6A s second cladding layer 44
(Zn-doped, 8 X 1017 cm-3).
厚さ４０ｎｍのｐ型Ｇ ａ ｏ、 ａｓＡ ｌ ｏ、
ｔａＡ ８光結合層４５（Ｚｎドープ、８ Ｘ Ｉ Ｏ
”ｃｍ−３） 、厚さ１μｍのｐ型Ｇ ａ６，６Ａ ｌ
ｃｌ、６Ａ ｓ第２クラッド層４６ （Ｚｎドープ、８
Ｘ １０１７ｃｍ１） ３６、厚さ０．５μｍのｐ３
型Ｇ ａ Ａ ｓキャップ層４７（Ｚｎドープ、２ Ｘ
１０１９ｃｍ−３）を順次成長する１次いで該結晶を
炉から取出し、加速電圧２００ｋＶでプロトン（Ｈｏ）
を約２．２ μｍの深さイオン打込みしプロトン打込み
層４８を形成する。この時、レーザストライプ形成用の
マスクとしてｐ型オーム性電極４９を用いる０次いで該
結晶の上部と下部にｐ型電極取出し用バッド５０．ｎ型
電極５１を蒸着法により形成する０次いでストライプ状
凹部４０を一点鎖線部でより八き関し。40 nm thick p-type Gao, asAlo,
taA 8 optical coupling layer 45 (Zn doped, 8
"cm-3), 1 μm thick p-type Ga6,6A l
cl, 6A s second cladding layer 46 (Zn doped, 8
x 1017cm1) 36, 0.5μm thick p3
Type G a As cap layer 47 (Zn doped, 2X
1019cm-3) is sequentially grown.Then, the crystal is taken out from the furnace and proton (Ho) is grown at an accelerating voltage of 200kV.
Ion implantation is performed to a depth of approximately 2.2 μm to form a proton implantation layer 48. At this time, a p-type ohmic electrode 49 is used as a mask for laser stripe formation, and then p-type electrode extraction pads 50 are placed on the top and bottom of the crystal. The n-type electrode 51 is formed by vapor deposition, and then the striped recesses 40 are drawn along the dashed-dotted lines.
チップ化する。Chip.
第６図のＡ−Ａ’、Ｂ−Ｂ’部の断面図を各々第７図（
ａ）、第７図（ｂ）に示す、前記実施例と同様に第７図
（ａ）の多重量子井戸活性層４３は、第７図（ｂ）の光
結合層４５と同一平面上に位置している。レーザ光はプ
ロトン打込みによって形成されたストライプ内に効率良
く屈折率型光導波される０本レーザチップに電圧を印加
したところ、波長７８０ｎｍ、Ｌきい電流値４０ｍＡで
発振、光出力はやはり１００ｍＷ以上まで安定に動作し
た。Figure 7 shows cross-sectional views of sections AA' and BB' in Figure 6.
a), as shown in FIG. 7(b), similarly to the previous embodiment, the multi-quantum well active layer 43 in FIG. 7(a) is located on the same plane as the optical coupling layer 45 in FIG. 7(b). are doing. The laser beam is efficiently refractive index-guided within the stripe formed by proton implantation. When a voltage was applied to the zero laser chip, it oscillated at a wavelength of 780 nm and an L-threshold current value of 40 mA, with an optical output of over 100 mW. It worked stably.
上記従来の問題点はレーザ端面をドライ加工により形成
することによっても達成できる。この場合透明層の幅を
５μｍ程度以下に精度良く制御できる。実施例４，５に
その実施例を示す。The above conventional problems can also be solved by forming the laser end face by dry processing. In this case, the width of the transparent layer can be precisely controlled to about 5 μm or less. Examples 4 and 5 show examples.
実施例４
本発明の実施例４を第８図（ａ）〜第８図（ｆ）、第９
図、第１０図（ａ）および第１０図（ｂ）により詳細に
説明する。Example 4 Example 4 of the present invention is shown in FIGS. 8(a) to 8(f) and 9.
This will be explained in detail with reference to FIG. 10(a) and FIG. 10(b).
まずＳｉドープｎ ＝ Ｉ Ｘ １０”ｃｍ−３の面方
位（１００）ＧａＡｓ基板６１（第８図（ａ））に５ｉ
０２膜を堆積し、ホトマスクを用いレーザ活性層のスト
ライプ方向と直角方向に幅〜６ｏμｍのＳ ｉ ０２膜
６２ストライプを形成、しかる後、硫酸−過酸化水素−
エチレングリコール比が１：２ニアのエツチング液で約
１μｍの段差エラチン６３を行う（第８図（ｂ））、次
いで該基板結晶を有機金属熱分解炉にセットし厚さ２．
５μｍのｎ型Ｇ ａ６，６Ａ Ｉ（１，６Ａ ｓクラッ
ド層（Ｓｅドープｌ Ｘ １０１８ｃｍ＝） ６４ 、
厚さ５０ｎｍのＧ ａｏ、ｇｇＡ ｌｏ、１４Ａ ｓレ
ーザ活性層（ノンドープ）６５、厚さ０．３５μｍのｐ
型Ｇ ａｏ、５Ａ１ｏ、ｓＡ ｓ層（２ｏ、−プ、Ｘ□
。出。、−・）６６、厚あ。、７μｍのｎ型Ｇ ａ Ａ
ｓ電流狭窄層（Ｓｅドープ４×１０”ｃｍ−３）６７
を順次結晶成長する（第８図（Ｃ））、この時基板上の
凸部は多層成長後もそのまま維持される０次いで１本多
層結晶を炉から取出し、写真食剣法とＲＩＥ （反応性
イオンエツチング）法によりｉｎ型ＧａＡｓ電流ブロッ
ク層６７を選択的にエッチ除去し幅約５μｍのストライ
プ溝を形成する。この後、再び熱分解炉中でｐ型Ｇａｏ
５Ａｌｏ５Ａｓクラッド層（Ｚｎドープ。First, a 5i Si-doped GaAs substrate 61 (FIG. 8(a)) with a plane orientation of (100) with n = I x 10"cm-3
02 film was deposited, and 62 stripes of Si02 film with a width of ~6 μm were formed in the direction perpendicular to the stripe direction of the laser active layer using a photomask, and then sulfuric acid-hydrogen peroxide-
An etching solution with an ethylene glycol ratio of about 1:2 is used to perform etching with a step height of about 1 μm (FIG. 8(b)), and then the substrate crystal is set in an organometallic pyrolysis furnace and etched to a thickness of 2.0 μm.
5 μm n-type Ga6,6A I (1,6A s cladding layer (Se doped l x 1018 cm =) 64,
50 nm thick Gao, ggA lo, 14A s laser active layer (non-doped) 65, 0.35 μm thick p
Type Gao, 5A1o, sA s layer (2o, -pu, X□
. Out. ,-・)66, Thick. , 7 μm n-type Ga A
s current confinement layer (Se doped 4×10”cm−3) 67
(Fig. 8 (C)). At this time, the protrusions on the substrate remain as they are even after multilayer growth. The 0 and 1 multilayer crystals are taken out of the furnace and subjected to photo-etching techniques and RIE (reactive ionization). The in-type GaAs current blocking layer 67 is selectively etched away using a method (etching) to form striped trenches with a width of about 5 μm. After this, p-type GaO
5Alo5As cladding layer (Zn doped.
２ Ｘ １０”ｃｍ−３） ６８、ｐ０型ＧａＡｓキャ
ップ層（Ｚｎドープ、２ Ｘ １０”ｃｍ−３） Ｇ
９を連続成長する（第８図（ｄ））、この後、上記多層
結晶にｐＩ！：！電極７０を蒸着法で形成する０次いで
下層レジスト７１−中間層７２−上層レジスト７３を順
次スピンコーティングし、三層レジスト構造とした後、
写真食剣法およびドライエツチング法により上記三層レ
ジストを順次エツチングし垂直な端面を持つ多層レジス
トマスクを形成する。これを反応性イオンビームエッチ
法によりＣＩ、ガスを用いて上記多層結晶をＧａＡｓ基
板が露出するまで垂直エッチする（第８図（ｅ））。次
いで上記結晶の裏面にｎ電極７４を蒸着後、へき開法に
よりレーザチップとする（第８図（ｆ））。第９図に完
成チップの横断面図、第１０図（ａ）および第１０図（
ｂ）に各々第９図ののＡ−Ａ ’ 。2 X 10"cm-3) 68, p0 type GaAs cap layer (Zn doped, 2 X 10"cm-3) G
9 is continuously grown (FIG. 8(d)). After this, pI! :! After forming the electrode 70 by vapor deposition, the lower resist layer 71, the intermediate layer 72, and the upper resist layer 73 are sequentially spin-coated to form a three-layer resist structure.
The three-layer resist is sequentially etched by photoetching and dry etching to form a multilayer resist mask having vertical end faces. This is vertically etched by reactive ion beam etching using CI and gas until the GaAs substrate is exposed (FIG. 8(e)). Next, an n-electrode 74 is deposited on the back surface of the crystal, and then a laser chip is formed by cleavage (FIG. 8(f)). Figure 9 is a cross-sectional view of the completed chip, Figures 10(a) and 10(
b) A-A′ of FIG. 9, respectively.
Ｂ−Ｂ’部の縦断面図を示す、第１０図（ａ）はレーザ
共振器内の断面図、第１０図（ｂ）は端面透明部の断面
図である。図示するように第１０図（ａ）の活性層５は
第１０図（ｂ）の活性層と異なって位置し、レーザ端部
がｎ型クラッド層６４から成る透明層で形成されている
ことがわかる。FIG. 10(a) is a sectional view of the interior of the laser resonator, and FIG. 10(b) is a sectional view of the end face transparent portion, showing a longitudinal sectional view of the section B-B'. As shown, the active layer 5 in FIG. 10(a) is positioned differently from the active layer in FIG. 10(b), and the laser end is formed of a transparent layer consisting of an n-type cladding layer 64. Recognize.
またｎ”−ＧａＡｓ電流狭窄層６７によりレーザ光は効
率良くストライプ内に屈折率型に光導波され、横モード
が安定化されている６本構造をもつチップに電圧を印加
したところ、波長７８０ｎｍ、しきい電流値４０ｍＡで
発振した。レーザ光出力は１００ｍＷまで高出力動作し
た。また光出力５０ｍＷ、周囲温度７０℃で連続動作さ
せたところ、１０００時間以上で安定に動作、劣化は＆
１１測されていない。In addition, when a voltage was applied to a chip with a six-wire structure in which the laser light was efficiently guided within the stripe in a refractive index manner by the n''-GaAs current confinement layer 67 and the transverse mode was stabilized, it was found that the wavelength was 780 nm. It oscillated with a threshold current value of 40 mA.The laser light output operated at high output up to 100 mW.Also, when it was operated continuously at a light output of 50 mW and an ambient temperature of 70°C, it operated stably for more than 1000 hours, and there was no deterioration.
11 Not measured.
本実施例では活性層として単一のダブルヘテロ構造の場
合について記述したが、ＧａＡｓの量子井戸層とＧ ａ
Ａ Ｉ Ａ ｓの量子障壁層から成る多重量子井戸構
造活性層の場合についても同様の効果があることは云う
までもない。This example describes the case of a single double heterostructure as the active layer, but a GaAs quantum well layer and a GaAs quantum well layer
It goes without saying that similar effects can be obtained in the case of a multi-quantum well structure active layer made of an AIAs quantum barrier layer.
実施例５
本発明の実施例５の半導体レーザ装置を第１１図、第１
２図（ａ）および第１２図（ｂ）により説明する。第１
１図は光の進行方向に平行方向の断面図、第１２図（ａ
）および第１２図（ａ）は各々第１１図のＡ−Ａ’、Ｂ
−Ｂ’つまり光と垂直方向の断面図を示している。Example 5 A semiconductor laser device according to Example 5 of the present invention is shown in FIGS.
This will be explained with reference to FIG. 2(a) and FIG. 12(b). 1st
Figure 1 is a cross-sectional view parallel to the direction of light propagation, Figure 12 (a
) and FIG. 12(a) are AA' and B in FIG. 11, respectively.
-B', that is, a cross-sectional view in the direction perpendicular to the light.
本実施例では、段差としてあらがじめｎ０型Ｇ ａ Ａ
ｓ半導体基板３１にドライエッチで深さ１μｍの凹部
を形成した。しがる後熱分解炉中で厚さ１．５μｍのｎ
型Ｇ ａｏ、５Ａ １０，６Ａ ｓクラッド層（Ｓｅド
ープ、Ｉ Ｘ １０”ｃｍ−３） ８１ 、厚さ５ｎｍ
のＧａｏ９３Ａ１ｏｏ、Ａｓ量子井戸層と厚さべ
４’ｐ／ｍのＧ ａ（１１Ａ Ｉ。、３Ａ Ｓ量子障壁
層から成る全厚さ５０ｎｍのアンドープ多重量子井戸活
性層８２、厚さ２．５μｍのｐ型Ｇ ａ（、，５Ａ ｌ
ｏ、、、Ａ ｓクラッド層（Ｚｎドープ、８ＸＩＯ’１
ｃｍ−３）８３゜厚さ０．５重ｍのｐ゛型ＧａＡｓキャ
ップ層（Ｚｎドープ、２ Ｘ １０１ｇｃｍ”３） ８
４を順次成長する。In this example, the step is originally n0 type Ga A
A recess with a depth of 1 μm was formed in the semiconductor substrate 31 by dry etching. After the pyrolysis furnace, a 1.5 μm thick
Type Gao, 5A 10,6A s cladding layer (Se doped, I x 10"cm-3) 81, thickness 5nm
Gao93A1oo, an undoped multiple quantum well active layer 82 with a total thickness of 50 nm consisting of an As quantum well layer and a Ga(11A I., 3A S quantum barrier layer with a thickness of 4'p/m), p-type Ga(,,5A l
o,,,A s cladding layer (Zn doped, 8XIO'1
cm-3) 83° 0.5 m thick p-type GaAs cap layer (Zn doped, 2 x 101 gcm"3) 8
4 in sequence.
次いで該結晶を炉から取出し、加連電圧２００ｋＶでプ
ロトン（Ｈｌ）を約２．７μｍの深さイオン打込みしプ
ロトン打込み層８５を形成する。この時、レーザストラ
イプ形成用のマスク８６としてＰ型オーム性電極を用い
る。次いで該結晶の上部にｐ型電極取出し用パッド８７
を蒸着法により形成する。この後、実施例４と同様に多
層レジストを形成後、反応性イオンビームエツチングに
よリレーザ両端部に垂直加工端面８８を形成する。Next, the crystal is taken out from the furnace, and protons (Hl) are ion-implanted to a depth of about 2.7 μm at an applied voltage of 200 kV to form a proton-implanted layer 85. At this time, a P-type ohmic electrode is used as a mask 86 for forming laser stripes. Next, a p-type electrode extraction pad 87 is placed on the top of the crystal.
is formed by a vapor deposition method. Thereafter, a multilayer resist is formed in the same manner as in Example 4, and vertically processed end faces 88 are formed at both ends of the laser by reactive ion beam etching.
次いで裏面ｎ型電極８９を蒸着法により形成、ドライエ
ツチング凹部をへき開法もしくはダイジング法により切
断し、レーザチップとする。Next, an n-type electrode 89 on the back surface is formed by a vapor deposition method, and the dry etched recess is cut by a cleaving method or a dicing method to obtain a laser chip.
第１２図のＡ−Ａ’、Ｂ−Ｂ ’部の断面図を各々第１
２図（ａ）、第１２図（ｂ）に示す、レーザ光はプロト
ン打込みによって形成されたストライプ９０内に効率良
く屈折率型光導波される。本レーザチップに電圧を印加
したところ、波長７８０ｎｍ、しきい電流値４０ｍＡで
発振、光出力はやはり１００ｍＷ以上まで安定に動作し
た。The cross-sectional views of the A-A' and B-B' sections in Figure 12 are
As shown in FIG. 2(a) and FIG. 12(b), the laser light is efficiently guided into a refractive index type optical waveguide within a stripe 90 formed by proton implantation. When a voltage was applied to this laser chip, it oscillated at a wavelength of 780 nm and a threshold current value of 40 mA, and operated stably with an optical output of 100 mW or more.
本発明による半導体レーザ装置およびその製造方法は、
前記各実施例に示したＧａＡｌＡｓ系に限らず、他の系
、例えばｍ−ｖ族化合物半導体であるＩｎＧａＡｓ （
ｐ）系やＩｎＧａ ’（Ａｌ）ｐ系の半導体レーザ装置
についても同様に適用できることは云うまでもない。A semiconductor laser device and a manufacturing method thereof according to the present invention include:
In addition to the GaAlAs system shown in each of the above embodiments, other systems such as InGaAs (m-v group compound semiconductor) may also be used.
It goes without saying that the present invention can be similarly applied to p-based and InGa'(Al)p-based semiconductor laser devices.
本発明の光結合層関係の具体例を整理すると次の様にな
る。Specific examples related to the optical coupling layer of the present invention are summarized as follows.
１、半導体基板−ヒにあらかじめ凸部もしくは凹状のス
トライプを形成した後、第１クラッド層、第１クラッド
層に内包される光結合層、レーザ活性層、第２クラッド
層よりなる２重ダブルヘテロ構造を形成し、基板段差厚
さと光結合層−レーザ活性層間の厚みがほぼ一致して成
る半導体レーザ装置及びその製造方法。1. After forming convex or concave stripes on a semiconductor substrate in advance, a double double hetero layer consisting of a first cladding layer, an optical coupling layer included in the first cladding layer, a laser active layer, and a second cladding layer is formed. A semiconductor laser device having a structure in which the thickness of a substrate step and the thickness between an optical coupling layer and a laser active layer are almost the same, and a method for manufacturing the same.
２、レーザ活性層厚Ｗａと光結合層厚Ｗ。の厚さが
Ｗｌｌ≦Ｗｃ
また多重量子井戸構造をもつ光結合層、レーザ活性層に
おいて活性層内量子井戸幅ＬＷと光結合層内の量子井戸
幅ＬＷの関係が
また活性層がｍコの量子井戸とｎコの量子障壁からなる
多重量子井戸構造をもち、光結合層が２重へテロ構造を
もつ場合、量子井戸幅ｍＬａｗと量子障壁幅ｎＬｇの和
と光結合層厚Ｗ。の関係がなる上記１項記載の半導体レ
ーザ装置及びその製造方法。2. Laser active layer thickness Wa and optical coupling layer thickness W. The thickness of Wll≦Wc In addition, the relationship between the quantum well width LW in the active layer and the quantum well width LW in the optical coupling layer in the optical coupling layer with a multi-quantum well structure and the laser active layer is also When the optical coupling layer has a double heterostructure with a multiple quantum well structure consisting of a well and n quantum barriers, the sum of the quantum well width mLaw and the quantum barrier width nLg and the optical coupling layer thickness W. The semiconductor laser device and its manufacturing method according to item 1 above, wherein the following relationship holds true.
３、レーザ活性層の混晶組成Ｘ。と光結合層の混晶組成
ｘ０が
Ｘａ＜ Ｘｃ
また多重量子井戸構造をもつ活性層、光結合層にまた活
性層が多重量子井戸構造をもち、光結合層が２重へテロ
構造をもつ場合、
Ｘ Ｗ ＜ Ｘ Ｃ
なる上記１項記載の半導体レーザ装置及びその製造方法
。3. Mixed crystal composition X of the laser active layer. and the mixed crystal composition x0 of the optical coupling layer is Xa< , X W < X C , and the method for manufacturing the semiconductor laser device according to item 1 above.
本発明による半導体レーザ装置及びその製造方法は、該
レーザ装置のレーザ出力端面に透明半導体層を設け１．
かつ光結合層を内包させ、活性層からのレーザ光と効率
の良い光結合を行なわしめることにより、レーザ特性を
そこなわず、高出力時における光出力破壊限界値を大幅
に向上させるものであるが、基板のエツチング加工と結
晶成長時の厚みを制御することで比較的容易に本発明の
構造を形成できるため、その効果は非常に大きい。A semiconductor laser device and a method for manufacturing the same according to the present invention include: 1. A transparent semiconductor layer is provided on a laser output end face of the laser device;
In addition, by incorporating an optical coupling layer and performing efficient optical coupling with the laser light from the active layer, the optical output breakdown limit value at high output is significantly improved without impairing the laser characteristics. However, since the structure of the present invention can be formed relatively easily by controlling the etching process of the substrate and the thickness during crystal growth, the effect is very large.
本発明によれば波長０．８５μ、ｍ以下の波長域で５０
ｍＷ以上の高信頼性を保障でき、種々の情報端末用レー
ザ光源としてその記録密度の向上と、書込みの速度向上
に貢献できる。According to the present invention, in the wavelength range of 0.85 μm or less, 50 μm
It can guarantee high reliability of mW or more, and can contribute to improving recording density and writing speed as a laser light source for various information terminals.
第１図は本発明の半導体レーザ装置における端面透明層
の設計図を示す光の進行方向に平行な方向の断面図、第
２図（ａ）〜第２図（ｃ）は本発明の実施例１の半導体
レーザ装置の断面図、第３図は実施例１のレーザ装置の
電流−光出力特性の従来装置との比較を示す図、第４図
は本発明の実施例２の半導体レーザ装置の光の進行方向
と平行方向の断面図、第５図（ａ）および第５図（ｂ）
は各々第４図のＡ−Ａ’、Ｂ−Ｂ ’部の断面図、第６
図は本発明の実施例３の半導体レーザ装置の光の進向方
向と平行方向の断面図、第７図（ａ）および第７図（ｂ
）は各々第６図のＡ−Ａ’、Ｂ−Ｂ’部の断面図、第８
図（ａ）〜第８図（ｆ）は本発明の実施例４の半導体レ
ーザ装置の製造工程図、第９図は実施例４の完成レーザ
チップの光の進行方向に平行な方向の断面図、第１０図
（ａ）および第１０図（ｂ）は各々第９図のＡ−Ａ’。
Ｂ−Ｂ’部の断面図、第１１図は本発明の実施例５の半
導体レーザ装置の光の進行方向と平行方向の断面図、第
１２図（ａ）および第１２図（ｂ）は各々第１１図のＡ
−Ａ’、Ｂ−Ｂ’部の断面図である。
１．２１．３１− （１００）ＧａＡｓ基板、３゜２０
・・・ストライプ状の凸部、４，６，２２，２４゜４２
・・・第１クラッド層、５，２３．４５・・・光結合層
、７，２５，４３・・・レーザ活性層、８，２６゜４４
．４（３・・・第２７クラツド層、２７・・・ｎ゛型雷
電流ブロック層４８・・・プロトン打込み層、６１・・
・（’１００）ＧａＡｓ基板、６３ ・・・段差エッチ
部、６４．８１・・・ｎ型クラッド層、６６．８３・・
・ｐ型クラッド層、６７・・・ｎ”−ＧａＡｓ電流狭窄
層。
７１・・・下層レジスト、７２・・・中間層、７３・・
・上層レジスト、６５．８２・・・レーザ活性層、８５
・・・Ｈ゛打込層、８８・・・垂直加工端面。
４を威Ｃ＃ＬＡ）
第４図
第夕国
（ペノＡ−Ａ’１ｌｐｂＱＪ
＜占）ｒｔ−ｒｔ’ｑｒｆａｍ第乙因
ｑり、４ｊ−７Ｚクラν）１
第１目
第７図
ｈ′５′
第７０目
第７７目
第７２目
ｍＡ−Ａ’呵＠目 υβす・ギ慟目、９２−レア′
府１FIG. 1 is a cross-sectional view in a direction parallel to the direction of propagation of light showing a design drawing of an edge transparent layer in a semiconductor laser device of the present invention, and FIG. 2(a) to FIG. 2(c) are examples of the present invention. 3 is a cross-sectional view of the semiconductor laser device of Example 1 of the present invention, FIG. 3 is a diagram showing a comparison of the current-light output characteristics of the laser device of Example 1 with a conventional device, and FIG. Cross-sectional views in the direction parallel to the traveling direction of light, FIG. 5(a) and FIG. 5(b)
are sectional views of sections A-A' and B-B' in Fig. 4, respectively.
7(a) and 7(b) are cross-sectional views of a semiconductor laser device according to a third embodiment of the present invention in a direction parallel to the direction in which light travels.
) are sectional views taken along lines A-A' and B-B' in Figure 6, respectively.
Figures (a) to 8(f) are manufacturing process diagrams of a semiconductor laser device according to Example 4 of the present invention, and Figure 9 is a cross-sectional view of the completed laser chip of Example 4 in a direction parallel to the direction of light propagation. , FIG. 10(a) and FIG. 10(b) are taken along the line AA' in FIG. 9, respectively. 11 is a cross-sectional view of the semiconductor laser device of Example 5 of the present invention in a direction parallel to the light traveling direction; FIGS. 12(a) and 12(b) are respectively A in Figure 11
-A', BB' sectional view. 1.21.31- (100) GaAs substrate, 3°20
...Striped convex portion, 4, 6, 22, 24°42
...First cladding layer, 5,23.45... Optical coupling layer, 7,25,43... Laser active layer, 8,26°44
．． 4 (3... 27th cladding layer, 27... n-type lightning current blocking layer 48... proton implantation layer, 61...
・('100) GaAs substrate, 63...Step etched portion, 64.81...N-type cladding layer, 66.83...
- P-type cladding layer, 67...n"-GaAs current confinement layer. 71... Lower layer resist, 72... Intermediate layer, 73...
・Upper layer resist, 65.82...Laser active layer, 85
...H゛Driven layer, 88...Vertical processing end surface. 4 wo C#LA) Figure 4 Yukuni (Peno A-A'1lpbQJ
<Fortune) rt-rt'qrfam 2nd cause qri, 4j-7Zkura ν) 1 1st eye 7th figure h'5' 70th eye 77th eye 72nd eye mA-A'2 @ eye υβsu・Giriformes, 92-rare'
Prefecture 1
Claims (1)
て、レーザ共振器の少なくとも一方の端面領域に光を伝
播する光結合層がクラッド層に挟まれて形成されており
、該光結合層は上記端面領域以外の場所にある活性層と
クラッド層を介して光結合していることを特徴とするダ
ブルヘテロ構造半導体レーザ装置。 ２、上記ダブルヘテロ構造は基板上に形成されており、
該基板の少なくとも一方のレーザ共振器端面領域は共振
器長方向において他の部分より低くなって段になってお
り、上記活性層および上記光結合層は上記レーザ共振器
の両端にわたって上記基板の形状に沿って形成されてお
り、かつ上記光結合層は上記活性層に対し上記基板と反
対側に形成されている特許請求の範囲第１項記載のダブ
ルヘテロ構造半導体レーザ装置。 ３、上記ダブルヘテロ構造は基板上に形成されており、
該基板の少なくとも一方のレーザ共振器端面領域は共振
器長方向において他の部分より高くなっており、上記活
性層および上記光結合層は上記レーザ共振器の両端にわ
たって上記基板の形状に沿って形成されており、かつ上
記光結合層は上記活性層に対し基板側に形成されている
特許請求の範囲第１項記載のダブルヘテロ構造半導体レ
ーザ装置。 ４、上記基板の低くなった部分は、共振器の幅方向全体
にわたって形成されており、上記活性層と上記光結合層
を光結合する上記クラッド層の長さは、上記基板の段差
とほぼ等しい特許請求の範囲第２項記載のダブルヘテロ
構造半導体レーザ装置。 ５、上記活性層の厚さＷａと上記光結合層の厚さＷｃの
関係はＷａ≦Ｗｃである特許請求の範囲第４項記載のダ
ブルヘテロ構造半導体レーザ装置。 ６、上記活性層および上記結合層は多重量子井戸構造で
あり、かつ該活性層の量子井戸幅Ｌ＾ａ＿ｗと該光結合
層の量子井戸幅Ｌ＾ｃ＿ｗの関係はＬ＾ａ＿ｗ≦Ｌ＾ｃ
＿ｗである特許請求の範囲第４項記載のダブルヘテロ構
造半導体レーザ装置。[Claims] 1. In a semiconductor laser device having a double heterostructure, an optical coupling layer for propagating light to at least one end face region of a laser resonator is formed sandwiched between cladding layers, and the optical coupling layer is sandwiched between cladding layers. A double heterostructure semiconductor laser device characterized in that the layer is optically coupled to an active layer located at a location other than the end face region via a cladding layer. 2. The double heterostructure is formed on a substrate,
At least one laser resonator end face region of the substrate is lower than the other portion in the resonator length direction and is stepped, and the active layer and the optical coupling layer extend over both ends of the laser resonator in the shape of the substrate. 2. The double heterostructure semiconductor laser device according to claim 1, wherein the optical coupling layer is formed on a side opposite to the substrate with respect to the active layer. 3. The double heterostructure is formed on a substrate,
At least one laser resonator end face region of the substrate is higher than other portions in the cavity length direction, and the active layer and the optical coupling layer are formed along the shape of the substrate across both ends of the laser resonator. 2. The double heterostructure semiconductor laser device according to claim 1, wherein the optical coupling layer is formed on the substrate side with respect to the active layer. 4. The lowered portion of the substrate is formed across the entire width direction of the resonator, and the length of the cladding layer that optically couples the active layer and the optical coupling layer is approximately equal to the step of the substrate. A double heterostructure semiconductor laser device according to claim 2. 5. The double heterostructure semiconductor laser device according to claim 4, wherein the relationship between the thickness Wa of the active layer and the thickness Wc of the optical coupling layer is Wa≦Wc. 6. The active layer and the coupling layer have a multiple quantum well structure, and the relationship between the quantum well width L^a_w of the active layer and the quantum well width L^c_w of the optical coupling layer is L^a_w≦L^c
_w. The double heterostructure semiconductor laser device according to claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32715487A JPH01170082A (en) | 1987-12-25 | 1987-12-25 | Double-hetero structure semiconductor laser with device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32715487A JPH01170082A (en) | 1987-12-25 | 1987-12-25 | Double-hetero structure semiconductor laser with device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01170082A true JPH01170082A (en) | 1989-07-05 |
Family
ID=18195913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32715487A Pending JPH01170082A (en) | 1987-12-25 | 1987-12-25 | Double-hetero structure semiconductor laser with device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01170082A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227514A (en) * | 2006-02-22 | 2007-09-06 | Anritsu Corp | Semiconductor laser |
| US8230816B2 (en) | 2004-11-24 | 2012-07-31 | Richell U.S.A., Inc. | Freestanding pet barrier |
| US8528257B2 (en) | 2011-03-04 | 2013-09-10 | Richell Corporation | Convertible pet barrier with a connection member |
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|---|---|---|---|---|
| JPS4989493A (en) * | 1972-12-26 | 1974-08-27 | ||
| JPS50159287A (en) * | 1974-06-12 | 1975-12-23 | ||
| JPS6017979A (en) * | 1983-07-11 | 1985-01-29 | Nec Corp | Semiconductor laser |
| JPS62219590A (en) * | 1986-03-19 | 1987-09-26 | Nec Corp | Integrated element of photo semiconductor and its manufacture |
-
1987
- 1987-12-25 JP JP32715487A patent/JPH01170082A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4989493A (en) * | 1972-12-26 | 1974-08-27 | ||
| JPS50159287A (en) * | 1974-06-12 | 1975-12-23 | ||
| JPS6017979A (en) * | 1983-07-11 | 1985-01-29 | Nec Corp | Semiconductor laser |
| JPS62219590A (en) * | 1986-03-19 | 1987-09-26 | Nec Corp | Integrated element of photo semiconductor and its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8230816B2 (en) | 2004-11-24 | 2012-07-31 | Richell U.S.A., Inc. | Freestanding pet barrier |
| JP2007227514A (en) * | 2006-02-22 | 2007-09-06 | Anritsu Corp | Semiconductor laser |
| US8528257B2 (en) | 2011-03-04 | 2013-09-10 | Richell Corporation | Convertible pet barrier with a connection member |
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