JPH01157039A - Fluorescent character display tube and manufacture thereof - Google Patents
Fluorescent character display tube and manufacture thereofInfo
- Publication number
- JPH01157039A JPH01157039A JP876188A JP876188A JPH01157039A JP H01157039 A JPH01157039 A JP H01157039A JP 876188 A JP876188 A JP 876188A JP 876188 A JP876188 A JP 876188A JP H01157039 A JPH01157039 A JP H01157039A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thin film
- anode
- board
- display tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 210000000795 conjunctiva Anatomy 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000001259 photo etching Methods 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 244000171726 Scotch broom Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はドツトマトリックス表示や画像表示タイプのけ
い光表示管に関し、特にその陰極部の構造およびその製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dot matrix display or image display type fluorescent display tube, and particularly to the structure of its cathode portion and its manufacturing method.
従来、この種のけい光表示管は、例えば第５図に示すよ
うに基板２１上に複数のストライブ状の陽極導体２２を
配設し、°ついで陽極導体２２上にけい光体層２３を被
着し、陽極２４を構成し、次にけい光体層２３を対向す
る上方にメツシュ状のグリッド２５を架設配置し、更に
グリッド２５の上方にフィラメント状の陰極２６を張架
配設し、カバーガラス２７および側面板２８から形成さ
れた気密容器内に収納し、かつ内部を真空に維持する構
造を有している。また、従来のこの種のけい光表示管の
動作は、フィラメント状陰極２９を常時通電加熱したま
まで、陽極２４とグリッド２５とでマトリックスを組み
、発光させる陽極２４とこれと交差するグリッド２５に
正の電圧を印加することにより、陰極２６から放出され
た電子がグリッド２５と陽極２４によって選択され陽極
２４のけい光体層２３に入射し、発光表示が行われるの
が一般的である。Conventionally, this type of fluorescent display tube has a plurality of striped anode conductors 22 disposed on a substrate 21 as shown in FIG. A mesh-like grid 25 is placed above the phosphor layer 23 facing the phosphor layer 23, and a filament-like cathode 26 is provided above the grid 25. It has a structure in which it is housed in an airtight container formed from a cover glass 27 and a side plate 28, and the interior is maintained in a vacuum. In addition, in the conventional operation of this kind of fluorescent display tube, the filament-shaped cathode 29 is constantly energized and heated, the anode 24 and the grid 25 form a matrix, and the anode 24 for emitting light and the grid 25 intersecting with the anode 24 are connected to each other. Generally, by applying a positive voltage, electrons emitted from the cathode 26 are selected by the grid 25 and the anode 24 and enter the phosphor layer 23 of the anode 24, resulting in a light-emitting display.
このように従来のけい光表示管は、陰極が常時６００〜
７００℃に通電加熱されているためエネルギー効率が悪
く、また陽極と陰極との間にグリッドを設けた立体的な
三極管構造であるので、陽極のドツト数が増加した場合
には、陽極とグリッドのアライメントに高度の精度と熟
練を要し、その作業は困難であり、さらにフィラメント
状の陰極が架空配設されているため、内部に耐圧支柱を
形成することが困難であり薄型化、大型化には不利とい
う欠点を有している。In this way, in conventional fluorescent display tubes, the cathode always has a
Energy efficiency is poor because it is electrically heated to 700°C, and since it has a three-dimensional triode structure with a grid between the anode and cathode, if the number of dots on the anode increases, Alignment requires a high degree of precision and skill, making the work difficult.Furthermore, since the filament-shaped cathode is installed overhead, it is difficult to form internal pressure-resistant columns, making it thinner and larger. has disadvantages.
本発明のけい光表示管は、半導体基板上に金属薄膜より
なる細線構造の陰極部とこれに通電する陰極導体部とを
絶縁薄膜を介して形成した陰極基板と、透光性基板上に
透光性導電薄膜を設け、この透光性導電薄膜上に上記陰
極部と対向する複数のけい光体層とけい光体層間を絶縁
する陽極絶縁層を設けた陽極基板とを対向させて結合さ
せその内部を真空としたことを特徴とする。The fluorescent display tube of the present invention includes a cathode substrate in which a cathode portion having a thin line structure made of a metal thin film and a cathode conductor portion for supplying current to the cathode portion are formed on a semiconductor substrate with an insulating thin film interposed therebetween, and a cathode substrate formed on a semiconductor substrate with a cathode portion having a fine line structure made of a metal thin film and a cathode conductor portion having a thin wire structure formed on the semiconductor substrate, and a transparent substrate on a transparent substrate. A photoconductive thin film is provided, and an anode substrate having a plurality of phosphor layers facing the cathode portion and an anode insulating layer for insulating between the phosphor layers is bonded to face each other on the light-transmitting conductive thin film. It is characterized by a vacuum inside.
また、本発明の薄型けい光表示管の陰極は半導体基板と
この半導体基板上に絶縁薄膜と金属薄膜との積層構造を
有し、この金属薄膜によりミアンダ形状の陰極部とこれ
に通電する陰極導体部とを形成し、かつ陰極部の配置さ
れた半導体基板の一部が除去され陰極部が架空構造を有
し、さらに陰極部に熱電子放出物を被着してなる構造を
有することを特徴とし、この陰極を通常の半導体プロセ
スにより高精度に簡単に製造することができる。Further, the cathode of the thin fluorescent display tube of the present invention has a laminated structure of a semiconductor substrate, an insulating thin film and a metal thin film on the semiconductor substrate, and the metal thin film forms a meander-shaped cathode part and a cathode conductor to which electricity is supplied. and a part of the semiconductor substrate on which the cathode part is disposed is removed so that the cathode part has a hollow structure, and the cathode part is further coated with a thermionic emitter. This cathode can be easily manufactured with high precision using a normal semiconductor process.
とくに本発明によれば半導体基板上に絶縁薄膜を形成す
る工程と、この半導体基板上に金属薄膜を被着し、この
金属薄膜よりミアンダ形状の陰極部とこれに通電する陰
極導体部とを形成する工程と、前記陰極部の下部に開口
を形成する工程と、前記陰極部に熱電子放出物質を形成
する工程とを具備した平面熱陰極を有することを特徴と
するけい光表示管の製造方法が得られる。In particular, the present invention includes the steps of forming an insulating thin film on a semiconductor substrate, depositing a metal thin film on the semiconductor substrate, and forming a meander-shaped cathode part and a cathode conductor part that conducts electricity thereon from this metal thin film. A method for manufacturing a fluorescent display tube, comprising a flat hot cathode comprising the steps of: forming an opening in the lower part of the cathode portion; and forming a thermionic emission material in the cathode portion. is obtained.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）、 （ｂ）は本発明の一実施例のけい光表
示管の陰極基板の構成を示す平面図および断面図である
。１は半導体基板であり、その表面に絶縁薄膜２を形成
する。次に半導体基板１を裏面よりフォトエツチングを
行い絶縁薄膜２の下部に開口３を形成し、絶縁薄膜２の
一部を架空構造とする。FIGS. 1(a) and 1(b) are a plan view and a sectional view showing the structure of a cathode substrate of a fluorescent display tube according to an embodiment of the present invention. 1 is a semiconductor substrate, and an insulating thin film 2 is formed on the surface thereof. Next, the semiconductor substrate 1 is photo-etched from the back side to form an opening 3 in the lower part of the insulating thin film 2, so that a part of the insulating thin film 2 has a hollow structure.
次に金属薄膜４を絶縁薄膜２上に被着し、フォトエツチ
ングにより陰極部５と陰極導体部６を形成する。陰極部
５はミアンダ形状等の細線構造を有し、架空部となって
いる絶縁薄膜２上に配置され、更に熱電子放出物質７が
被着されて陰極となる。Next, a metal thin film 4 is deposited on the insulating thin film 2, and a cathode portion 5 and a cathode conductor portion 6 are formed by photoetching. The cathode part 5 has a thin wire structure such as a meander shape, is placed on the insulating thin film 2 which is a hollow part, and is further coated with a thermionic emission material 7 to become a cathode.
次に上記実施例のような陰極を持つけい光表示管の製造
方法について第２図、第３図を用いて説明する。第２図
（ａ）に示すように、シリコン等の半導体基板１の全面
に二酸化シリコン、あるいは窒化シリコンの絶縁薄膜２
を形成する。次に第２図（ｂ）のように裏面の絶縁薄膜
２をパターニングし、これをマスクとして半導体基板１
をエツチングして、第２図（ｃ）に示すように表面の絶
縁薄膜２の下部に開口３を形成する。次に第２図（ｄ）
のように、絶縁薄膜２上にタングステンあるいはクンゲ
ステン合金の金属薄膜４をスパッタリング法、ＣＶＤ法
等により被着する。次に第２図（ｅ）のように金属薄膜
４をフォトエツチングにより陰極部５および陰極導体部
６を形成する。陰極部５は線幅５〜１０μｍで、小面積
でできるだけ長さを長くできるミアンダ形状として陰極
導体部との抵抗比を大きくとることにより陰極部５を加
熱する電力を低減することができる。また、陰極部５の
寸法は１００〜３００μｍ平方程度にとれば表示気密と
しては充分であり、このような加工は通常の集積回路で
は充分可能な精度である。次に（Ｂ ａ 。Next, a method for manufacturing a fluorescent display tube having a cathode as in the above embodiment will be explained with reference to FIGS. 2 and 3. As shown in FIG. 2(a), an insulating thin film 2 of silicon dioxide or silicon nitride is formed on the entire surface of a semiconductor substrate 1 made of silicon or the like.
form. Next, as shown in FIG. 2(b), the insulating thin film 2 on the back side is patterned, and this is used as a mask to form the semiconductor substrate 1.
is etched to form an opening 3 in the lower part of the insulating thin film 2 on the surface, as shown in FIG. 2(c). Next, Figure 2(d)
A metal thin film 4 of tungsten or Kungesten alloy is deposited on the insulating thin film 2 by sputtering, CVD, or the like. Next, as shown in FIG. 2(e), a cathode portion 5 and a cathode conductor portion 6 are formed by photoetching the metal thin film 4. The cathode section 5 has a line width of 5 to 10 .mu.m, and has a meandering shape that allows the length to be as long as possible with a small area, so that the electric power used to heat the cathode section 5 can be reduced by increasing the resistance ratio with the cathode conductor section. Furthermore, if the dimensions of the cathode section 5 are approximately 100 to 300 .mu.m square, it is sufficient for display airtightness, and such processing is sufficiently accurate for ordinary integrated circuits. Next (B a.
Ｓｒ、Ｃａ）Ｏのような熱電子放出物質７を陰極部５に
電着法等で被着して陰極基板が完成する。A thermionic emission material 7 such as Sr, Ca)O is deposited on the cathode portion 5 by electrodeposition or the like to complete the cathode substrate.
次に第３図に示すように、ガラス等の透光性基板１１上
に酸化インジウム等の透光性導電薄膜をＣＶＤ法、スパ
ッタ法等で被着してエツチングプロセスにより陽極導体
１２を形成する。次に隔壁となる陽極絶縁層１３を印刷
法等で形成し、陽極導体１２上に電着法、印刷法、フォ
トリソグラフィ法等でけい光体層１４を形成し、陽極基
板を製作する。Next, as shown in FIG. 3, a transparent conductive thin film such as indium oxide is deposited on a transparent substrate 11 such as glass by CVD, sputtering, etc., and an anode conductor 12 is formed by an etching process. . Next, an anode insulating layer 13 serving as a partition wall is formed by a printing method or the like, and a phosphor layer 14 is formed on the anode conductor 12 by an electrodeposition method, a printing method, a photolithography method, or the like to produce an anode substrate.
次に陰極部５を配設した陰極基板とけい光体層１４を配
設した陽極基板とを各々の陰極部５とけい光体層１４が
互いに交差するように配設し、裏面支持基板１５を取付
は外囲器を形成し内部を高真空に保持しはい光表示管が
完成する。ここで陽極絶縁層１３は陰極と陽極の間隔を
均一に保ち、かつ耐圧支柱の役目もする。Next, the cathode substrate on which the cathode section 5 is disposed and the anode substrate on which the phosphor layer 14 is disposed are arranged so that each cathode section 5 and the phosphor layer 14 cross each other, and the back support substrate 15 is attached. forms an envelope and maintains the interior at a high vacuum, completing the optical display tube. Here, the anode insulating layer 13 maintains a uniform distance between the cathode and the anode, and also serves as a withstand voltage support.
次に本発明の動作について第４図を用いて説明する。ま
ず陰極導体部６ａと６ｂに外部回路（図示せず）よりパ
ルス電流を流すと、陰極導体部６ａと６ｂ間にある陰極
部５ａが急峻に加熱され６００〜７００℃前後まで温度
上昇し、熱電子が放出されるようになる。この熱電子は
陽極導体１２ａ、１２ｂ・・・・・・に印加される電圧
に応じてけい光体層１４ａ、１４ｂ・・・・・・に到達
して所望のけい光体層を発光させる。次に陰極導体部６
ａ、６ｂに加えられているパルス電流がしゃ断されると
陰極部５ａの温度が急峻に低下し、熱電子放出が止まり
けい光体層の発光も消える。このように外部回路より順
次パルス電流を６ｂと６ｃ、ａｄ、・・・・・・に流す
ことによりけい光体層を発光させて表示することができ
る。Next, the operation of the present invention will be explained using FIG. 4. First, when a pulse current is passed through the cathode conductor parts 6a and 6b from an external circuit (not shown), the cathode part 5a between the cathode conductor parts 6a and 6b is rapidly heated and the temperature rises to around 600 to 700 degrees Celsius. Electrons will be emitted. These thermoelectrons reach the phosphor layers 14a, 14b, . . . depending on the voltages applied to the anode conductors 12a, 12b, . . . and cause the desired phosphor layers to emit light. Next, the cathode conductor part 6
When the pulse currents applied to a and 6b are cut off, the temperature of the cathode portion 5a drops sharply, thermionic emission stops, and the light emission from the phosphor layer also disappears. In this way, the phosphor layer can be caused to emit light for display by sequentially passing pulse currents through 6b, 6c, ad, . . . from an external circuit.
〔実施例２〕
第５図（ａ）、 （ｂ）は本発明の第２実施例の陰極部
の構造を示す平面図および断面図、第６図（ａ）〜（ｆ
）は本発明の第２実施例の陰極の製造工程を示す断面図
、第７図は本発明の第２実施例によるけい光表示管の断
面図である。[Example 2] FIGS. 5(a) and 5(b) are a plan view and a cross-sectional view showing the structure of the cathode part of a second embodiment of the present invention, and FIGS. 6(a) to (f)
) is a cross-sectional view showing the manufacturing process of a cathode according to a second embodiment of the present invention, and FIG. 7 is a cross-sectional view of a fluorescent display tube according to a second embodiment of the present invention.
第５図において半導体基板４１の表面に絶縁薄膜４８を
バターニングして形成する。次に金属薄膜４４を被着し
フォトエツチングにより陰極部４５と陰極導体部４６を
形成する。陰極部４５はミアンダ形状を有し、かつ陰極
部４５の下部の半導体基板４１が除去され開口４３を有
し、さらに陰極部４５に熱電子放出物質４７が被着され
て陰極となす。In FIG. 5, an insulating thin film 48 is formed on the surface of a semiconductor substrate 41 by patterning. Next, a metal thin film 44 is deposited and a cathode portion 45 and a cathode conductor portion 46 are formed by photoetching. The cathode section 45 has a meandering shape, has an opening 43 formed by removing the semiconductor substrate 41 below the cathode section 45, and further has a thermionic emission material 47 deposited on the cathode section 45 to form a cathode.
次にこの様な陰極を有するけい光表示管の製造方法につ
いて第６図、第７図を用いて説明する。Next, a method of manufacturing a fluorescent display tube having such a cathode will be explained with reference to FIGS. 6 and 7.
第５図（ａ）に示すようにシリコンの半導体基板４１上
に窒化シリコン等の絶縁マスク４８をＣＶＤ法等で形成
しパターニン、グする。次に（ｂ）のように半導体基板
４１の表面を酸化して二酸化シリコンの絶縁薄膜４２を
形成し、続いて窒化シリコン４８を除去しくｃ）となす
。次に表面を研削して（ｄ）のように平滑にした後、（
ｅ）のようにタングステンあるいはタングステン合金の
金属薄膜４４をスパッタリング法等により被着する。次
に（「）のように金属薄膜４４をフォトエツチングによ
り陰極部４５と陰極部４６を形成し、続いて陰極部４５
の下部の半導体基板４１をエツチングで除去し開口４３
を形成し陰極部４５を架空構造となす。As shown in FIG. 5(a), an insulating mask 48 made of silicon nitride or the like is formed on a silicon semiconductor substrate 41 by CVD or the like and patterned. Next, as shown in (b), the surface of the semiconductor substrate 41 is oxidized to form an insulating thin film 42 of silicon dioxide, and then the silicon nitride 48 is removed (c). Next, after grinding the surface to make it smooth as shown in (d),
As in e), a metal thin film 44 of tungsten or tungsten alloy is deposited by sputtering or the like. Next, as shown in (), the metal thin film 44 is photo-etched to form cathode parts 45 and 46, and then the cathode parts 45 and 46 are formed.
The lower part of the semiconductor substrate 41 is removed by etching to form an opening 43.
, and the cathode section 45 has an imaginary structure.
ここで陰極部４５は線幅５〜１０μｍで、小面積ででき
るだけ長さを長くできるミアンダ形状とし陰極導体部４
６との抵抗比を大きくとることにより陰極部４５を加熱
する電力を低減することができる。また陰極部４５の大
きさ（開口４３０寸法）は１００〜３００μｍ平方程度
に取りば表示密度としては充分であり、このような加工
は半導体プロセスでは容易に可能な精度である。次に（
Ｂａ、Ｓｒ、Ｃａ）０のような熱電子放出物質４７を陰
極部４５に電着法等で被着して平面熱陰極となす。Here, the cathode part 45 has a line width of 5 to 10 μm, and has a meander shape that allows the length to be as long as possible with a small area.
By increasing the resistance ratio with respect to 6, the electric power for heating the cathode section 45 can be reduced. Further, if the size of the cathode portion 45 (dimensions of the opening 430) is approximately 100 to 300 μm square, it is sufficient for the display density, and such processing is easily possible with precision in a semiconductor process. next(
A thermionic emission material 47 such as Ba, Sr, Ca)0 is deposited on the cathode portion 45 by electrodeposition or the like to form a planar hot cathode.
次に第７図に示すようにガラス等の透光性基板１１上に
酸化インジュウム等の透光性導電薄膜をＣＶＤ法等で被
着してフォトエツチングにより陰極導体１２を形成する
。次に隔壁となる陽極絶縁層１３を印刷法等で形成し、
陽極導体１２上に電着法、フォトリングラフィ法等でけ
い光体層１４を形成し陽極基板となす。Next, as shown in FIG. 7, a transparent conductive thin film of indium oxide or the like is deposited on a transparent substrate 11 of glass or the like by CVD or the like, and a cathode conductor 12 is formed by photoetching. Next, an anode insulating layer 13 that will become a partition is formed by a printing method, etc.
A phosphor layer 14 is formed on the anode conductor 12 by electrodeposition, photolithography, or the like to form an anode substrate.
次に陰極部４５を配設した平面熱陰極とけい光体層１４
を配設した陽極基板とを各々の陰極部４５とけい光体層
１４が互いに交差するように配設し、裏面支持基板１５
を取付は外囲器を形成し、内部を高真空に保持し薄型け
い光表示管となす。Next, a planar hot cathode with a cathode section 45 and a phosphor layer 14
A back support substrate 15 is arranged such that each cathode section 45 and phosphor layer 14 cross each other.
The tube is attached to form an envelope, which maintains a high vacuum inside and becomes a thin fluorescent display tube.
ここで陽極絶縁層１３は陰極と陽極との間隔を均一に保
ち、かつ耐圧支柱の役目もする。Here, the anode insulating layer 13 maintains a uniform distance between the cathode and the anode, and also serves as a voltage-resistant support.
〔実施例３〕
第８図（ａ）〜（ｇ）は本発明の第３実施例の陰極の製
造工程を示す断面図である。第７図（ａ）に示すように
半導体基板５１上に二酸化シリコン等を形成してバター
ニングして絶縁薄膜５２ａを形成する。次に（ｂ）のよ
うに絶縁薄膜５２ａをマスクとして半導体基板５１をエ
ツチングして開口５２ａを形成する。次に（ｃ）のよう
に半導体基板５１の表面に二酸化シリコン等の絶縁薄膜
５２ｂを形成し、続いて全面にポリシリコン、リン・シ
リケートガラス等の中間層５９を形成しくｄ）となす。[Embodiment 3] FIGS. 8(a) to 8(g) are cross-sectional views showing the manufacturing process of a cathode according to a third embodiment of the present invention. As shown in FIG. 7(a), silicon dioxide or the like is formed on a semiconductor substrate 51 and patterned to form an insulating thin film 52a. Next, as shown in FIG. 3B, the semiconductor substrate 51 is etched using the insulating thin film 52a as a mask to form an opening 52a. Next, as shown in (c), an insulating thin film 52b made of silicon dioxide or the like is formed on the surface of the semiconductor substrate 51, and then an intermediate layer 59 made of polysilicon, phosphorus silicate glass, etc. is formed on the entire surface (d).
次に表面を研削して（ｅ）のように平滑にした後、Ｃｏ
のようにタングステンおよびタングステン合金の金属薄
膜５４を被着する。次に（ｇ）のように金属薄膜５４を
フォトエツチングにより陰極部５５と陰極導体部５６を
形成し、続いて陰極部５５の下部の中間層５９を除去し
、開口５３ｂを形成し陰極部５５を架空構成として平面
熱陰極となす。Next, after grinding the surface to make it smooth as shown in (e), the Co
A thin metal film 54 of tungsten and tungsten alloy is deposited as shown in FIG. Next, as shown in (g), the metal thin film 54 is photo-etched to form a cathode part 55 and a cathode conductor part 56, and then the intermediate layer 59 below the cathode part 55 is removed to form an opening 53b and the cathode part 55 is removed. As a hypothetical configuration, assume a planar hot cathode.
この実施例では開口をあらかじめ形成した後、中間層を
埋込み最後に除去して開口を露出するわけであるが、こ
の中間層は絶縁薄膜とは異なる材質なので除去時にオー
バーエッチ等の不具合はなく開口寸法を高精度にかつ高
歩留で製造できる利点がある。In this example, after an opening is formed in advance, the intermediate layer is buried and finally removed to expose the opening. However, since this intermediate layer is made of a different material from the insulating thin film, there is no problem such as overetching during removal, and the opening can be easily removed. It has the advantage of being able to be manufactured with high dimensional accuracy and high yield.
以上説明したように本発明による薄型けい光表示管は平
面熱陰極を配設した陰極基板とけい光体層を配設した陽
極基板のみの二極管であるので構造が簡単であり、薄型
、大型化が容易にできる。As explained above, the thin fluorescent display tube according to the present invention is a diode tube consisting only of a cathode substrate with a flat hot cathode and an anode substrate with a phosphor layer, so it has a simple structure and can be made thinner and larger. It's easy to do.
また製造方法は通常の半導体の製造プロセスが使用でき
るので高精度、高密度の微細加工により陰極を小さくす
ることによる低消費電力化、さらにインライン化が容易
であり、自動化等による大幅なコストダウンが可能であ
り、かつ陰極に半導体基板を使用したことにより陰極の
駆動回路をこの半導体基板上に設けることができる効果
もある。In addition, since the manufacturing method can use normal semiconductor manufacturing processes, it is possible to reduce power consumption by reducing the size of the cathode through high-precision, high-density microfabrication, and it is also easy to install in-line, resulting in significant cost reductions through automation, etc. This is possible, and by using a semiconductor substrate for the cathode, there is also the advantage that the cathode drive circuit can be provided on the semiconductor substrate.
第１図（ａ）、 （ｂ）は本発明の第１実施例の平面熱
陰極の構造を示す平面図および断面図、第２図（ａ）〜
（ｅ）は本発明の第１実施例の平面熱陰極の製造構成を
示す断面図、第３図は本発明の第１実施例による薄型け
い光表示管の断面図、第４図は本発明のけい光表示管の
動作を説明する概略平面第５図（ａ）、 （ｂ）は本発
明の第２実施例の平面熱陰極の構造を示す平面図および
断面図、第６図（ａ）〜（ｆ）は本発明の第２実施例の
平面熱陰極の製造工程を示す断面図、第７図は本発明の
第２実施例による薄型けい光表示管の断面図、第８図（
ａ）〜（ｇ）は本発明の第３実施例の平面熱陰極の製造
工程を示す断面図、第９図は従来のけい光表示管の１部
破断斜視図である。
１．４１．５１・・・・・・半導体基板、２．４２．５
２・・・・・・絶縁薄膜、３．４３．５３・・・・・・
開口、４，４４゜５４・・・・・・金属薄膜、５，４５
．５５・・・・・・陰極部、６．４６．５６・・・・・
・陰極導体部、７，４７．５７・・・・・・熱電子放出
物質、９・・・・・・中間層、４８・・・・・・絶縁マ
スク、１１・・・・・・透光性基板、１２・・・・・・
陽極導体、１３・・・・・・陽極絶縁層、１４・・・・
・・けい光体層、１５・・・・・・裏面支持基板、２１
・・・・・・基板、２２・旧・・陽極導体、２３・・・
・・・けい光体層、２４・・・・・・陽極、２５・・・
・・・グリッド、２６・・・・・・フィラメント状陰極
、２７・・・・・・カバーガラス、２８・・・・・・側
面板。
代理人 弁理士 内 原 音
牛／ｖＪ
３ＩｖＩ’ｃ
第２図
１Ｉ遣光・Ｆ主井ネ（
１５襄命支持岑梃
第４図
桧極導体耶
卆Ｓ 図
〉
４１袢Ｉ基板
牟８ワ
５２ｂ杷べ薄状
箒８回FIGS. 1(a) and 1(b) are a plan view and a sectional view showing the structure of a planar hot cathode according to a first embodiment of the present invention, and FIGS. 2(a) to 2(b) are
(e) is a cross-sectional view showing the manufacturing structure of a flat hot cathode according to the first embodiment of the present invention, FIG. 3 is a cross-sectional view of a thin fluorescent display tube according to the first embodiment of the present invention, and FIG. 5(a) and 5(b) are schematic plan views for explaining the operation of the fluorescent display tube, and FIG. -(f) are cross-sectional views showing the manufacturing process of a flat hot cathode according to a second embodiment of the present invention, FIG. 7 is a cross-sectional view of a thin fluorescent display tube according to a second embodiment of the present invention, and FIG.
a) to (g) are cross-sectional views showing the manufacturing process of a flat hot cathode according to a third embodiment of the present invention, and FIG. 9 is a partially cutaway perspective view of a conventional fluorescent display tube. 1.41.51... Semiconductor substrate, 2.42.5
2... Insulating thin film, 3.43.53...
Opening, 4,44°54...Metal thin film, 5,45
．． 55...Cathode part, 6.46.56...
・Cathode conductor part, 7, 47.57... Thermionic emission material, 9... Intermediate layer, 48... Insulating mask, 11... Light transmitting Sexual substrate, 12...
Anode conductor, 13...Anode insulating layer, 14...
... Phosphor layer, 15 ... Back support substrate, 21
・・・・・・Substrate, 22・Old・Anode conductor, 23・・
...phosphor layer, 24... anode, 25...
... Grid, 26 ... Filament-shaped cathode, 27 ... Cover glass, 28 ... Side plate. Agent Patent Attorney Uchihara Otoushi/vJ 3IvI'c Fig. 2 1I Yorimitsu/F Main Ine (15 years of support) Fig. 4 Polar conductor S Fig. Hakibe Thin Broom 8 times
Claims (3)
部とこれに通電する陰極導体部を絶縁薄膜を介して形成
した陰極基板と、透光性基板上に、透光性導電薄膜を設
け、この透光性導電薄膜上に前記陰極部に対向する複数
のけい光体層とけい光体層間を絶縁する陽極絶縁層を設
けた陽極基板とを対向させて結合しその内部を真空とし
たことを特徴とするけい光表示管。(1) A cathode substrate in which a cathode part with a thin line structure made of a metal thin film and a cathode conductor part for supplying current to the cathode part are formed on a semiconductor substrate via an insulating thin film, and a transparent conductive thin film is provided on a transparent substrate. , a plurality of phosphor layers facing the cathode portion and an anode substrate having an anode insulating layer for insulating between the phosphor layers are bonded to face each other on the light-transmitting conductive thin film, and the inside thereof is evacuated. A fluorescent display tube featuring:
され前記陰極部が架空構造を有することを特徴とする請
求項１記載のけい光表示管。(2) The fluorescent display tube according to claim 1, wherein a part of the semiconductor substrate on which the cathode section is disposed is removed so that the cathode section has a hollow structure.
半導体基板上に金属薄膜を被着し、この金属薄膜より細
線構造の陰極部とこれに通電する陰極導体部とを形成す
る工程と、前記陰極部の下部に開口を形成する工程と、
前記陰極部に熱電子放出物質を形成する工程とを有する
ことを特徴とする請求項２記載のけい光表示管の製造方
法。(3) a step of forming an insulating conjunctiva on the semiconductor substrate, a step of depositing a metal thin film on the semiconductor substrate, and forming a cathode part with a thin wire structure and a cathode conductor part to conduct electricity thereon from the metal thin film; , forming an opening in the lower part of the cathode part;
3. The method of manufacturing a fluorescent display tube according to claim 2, further comprising the step of forming a thermionic emission material on the cathode portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP876188A JPH01157039A (en) | 1987-09-24 | 1988-01-18 | Fluorescent character display tube and manufacture thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-240011 | 1987-09-24 | ||
| JP24001187 | 1987-09-24 | ||
| JP876188A JPH01157039A (en) | 1987-09-24 | 1988-01-18 | Fluorescent character display tube and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01157039A true JPH01157039A (en) | 1989-06-20 |
Family
ID=26343347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP876188A Pending JPH01157039A (en) | 1987-09-24 | 1988-01-18 | Fluorescent character display tube and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01157039A (en) |
-
1988
- 1988-01-18 JP JP876188A patent/JPH01157039A/en active Pending
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