JPH01149964A - Shower electrode for plasma cvd - Google Patents
Shower electrode for plasma cvdInfo
- Publication number
- JPH01149964A JPH01149964A JP30576787A JP30576787A JPH01149964A JP H01149964 A JPH01149964 A JP H01149964A JP 30576787 A JP30576787 A JP 30576787A JP 30576787 A JP30576787 A JP 30576787A JP H01149964 A JPH01149964 A JP H01149964A
- Authority
- JP
- Japan
- Prior art keywords
- shower electrode
- holes
- electrode plate
- gas
- shower
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、例えば磁気ディスクの保ｒ！ＩＩＩ作成用等
に使用するプラズマＣＶＤ装置用シャワー電極に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is applicable to, for example, the maintenance of magnetic disks! This invention relates to a shower electrode for a plasma CVD apparatus used for forming III.
［従来技術］
従来、プラズマＣＶ Ｄ （Ｃｈｅｍｉｃａｌ Ｖａｐ
ｏｕｒ Ｄｅｐ。[Prior Art] Conventionally, plasma CVD (Chemical Vap
Our Dep.
５ｉｔｉＯｎ）法により、基板上に薄膜を形成するプラ
ズマｃｖｏ＠＋ｉは、第４図に示すように、真空反応容
器１内の基板ヒータ２上に処理すべきドーナツ状基板３
を寝かせて設置し、基板３の上方には基板ヒータ２に対
向させてシャワー電極４を設置し、該シャワー電極４と
基板ヒータ２との間に高周波電源等のプラズマ電源５か
ら高周波電力を印加してプラズマを発生させ、またシャ
ワー電極４からは原料ガスをシャワー状にプラズマ中に
流出させ、該原料ガスをプラズマで反応させて基板３状
に成膜を行わせる構造になっていた。この場合、シャワ
ー電極４は、多数のガス流出孔６を分散して設けたシャ
ワー電極板７と、該シャワー電極板７の裏側にガス分配
室８を形成して該ガス分配室８に供給される原料ガスを
各ガス流出孔６に分配する分配室形成体９により構成さ
れていた。なお、１０は真空反応容器１内を真空引きす
るための配管、１１はシャワー電極４に原料ガスを供給
するための配管である。As shown in FIG. 4, plasma cvo@+i, which forms a thin film on a substrate by the 5itiOn) method, is placed on a donut-shaped substrate 3 to be processed on a substrate heater 2 in a vacuum reaction vessel 1.
A shower electrode 4 is installed above the substrate 3 facing the substrate heater 2, and high frequency power is applied between the shower electrode 4 and the substrate heater 2 from a plasma power source 5 such as a high frequency power source. The structure is such that a plasma is generated, and a raw material gas flows into the plasma from the shower electrode 4 in a shower shape, and the raw material gas is reacted with the plasma to form a film on the substrate 3. In this case, the shower electrode 4 includes a shower electrode plate 7 in which a large number of gas outflow holes 6 are distributed and provided, and a gas distribution chamber 8 formed on the back side of the shower electrode plate 7 to be supplied to the gas distribution chamber 8. It was composed of a distribution chamber forming body 9 that distributes the raw material gas to each gas outlet hole 6. Note that 10 is a pipe for evacuating the inside of the vacuum reaction vessel 1, and 11 is a pipe for supplying raw material gas to the shower electrode 4.
この場合、従来のシャワー電極４におけるシャワー電極
板７には、各ガス流出孔６を第５図（Ａ）に示すように
ほぼ均一に分布させたり、あるいは第６図（Ａ＞に示す
よう外周に沿って分布させたりしていた。In this case, the shower electrode plate 7 of the conventional shower electrode 4 has gas outlet holes 6 distributed almost uniformly as shown in FIG. It was distributed along the
［発明が解決しようとする問題点］
しかしながら、第５図（Ａ）に示すようにガス流出孔６
をほぼ均一にシャワー電極板７に分布させたシャワー電
極４を用いて基板３に薄膜を形成した場合には、その膜
圧の分布は第５図＜８＞に示すように基板３の中央部が
厚くなり、均一な厚さの薄膜を形成できない問題点があ
った。また、第６図（Ａ）に示すようにガス流出孔６を
シャワー電極板７の外周に沿って分布させたシャワー電
極４を用いて基板３に薄膜を形成した場合には、その膜
厚の分布は第６図（Ｂ）に示すように基板３の外周側が
厚くなり、均一な厚さの薄膜を形成できない問題点があ
った。[Problems to be Solved by the Invention] However, as shown in FIG. 5(A), the gas outlet hole 6
When a thin film is formed on the substrate 3 using the shower electrode 4, which has a substantially uniform distribution of There was a problem that the film became thick, making it impossible to form a thin film with a uniform thickness. Furthermore, when a thin film is formed on the substrate 3 using the shower electrode 4 in which the gas outflow holes 6 are distributed along the outer periphery of the shower electrode plate 7 as shown in FIG. As shown in FIG. 6(B), the distribution becomes thicker on the outer peripheral side of the substrate 3, which poses a problem in that a thin film with a uniform thickness cannot be formed.
本発〜明の目的は、均一な厚さの薄膜を形成できるプラ
ズマＣＶＤ装置用シャワー電極を提供することにある。An object of the present invention is to provide a shower electrode for a plasma CVD apparatus that can form a thin film of uniform thickness.
［問題点を解決するための手段］
上記の目的を達成するための本発明の詳細な説明すると
、本発明は多数のガス流出孔を分散して設けたシャワー
電極板と、前記シャワー電極板の裏側にガス分配室を形
成して該ガス分配室に供給されるガスを前記各ガス流出
孔に分配する分配室形成体とを備えたプラズマＣＶＤ装
置用シャワー電極において、半径Ｒの前記シャワー電極
板に同心状にｎ段に前記ガス流出孔を設けるに際し、各
段の前記各ガス流出孔の前記シャワー電極板の中心から
の孔位＠ｒ、（ただし、ｋは前記ｎ段のうち前記シャワ
ー電極板の外周側から数えた段数であって１≦ｋ≦ｎ）
は
ｒ、−Ｒ（１−に２／ （１＋ｎ） ２）とし、各段の
前記各ガス流出孔の孔径り、はＤｋ″ｒ（
とし、各段の前記各ガス流出孔の周方向の孔の数Ｎ、は
Ｎｋｏｃｒｋ’
とすることを特徴とする。[Means for Solving the Problems] To explain in detail the present invention for achieving the above object, the present invention includes a shower electrode plate having a large number of distributed gas outlet holes, and a shower electrode plate having a plurality of distributed gas outlet holes. A shower electrode for a plasma CVD apparatus comprising a distribution chamber forming body that forms a gas distribution chamber on the back side and distributes gas supplied to the gas distribution chamber to each of the gas outlet holes, wherein the shower electrode plate has a radius R. When providing the gas outflow holes in n stages concentrically, the hole position of each gas outflow hole in each stage from the center of the shower electrode plate @r, (where k is the position of the shower electrode in the n stages) The number of steps counted from the outer circumference of the plate (1≦k≦n)
are r, −R(1− to 2/(1+n) 2), and the hole diameter of each gas outlet hole in each stage is Dk″r(, and the circumferential hole diameter of each gas outlet hole in each stage is The number N, is set to Nkocrk'.
［作用］
このようにガス流出孔を分布させて設けると、シャワー
電極板の中心から外周に向うにつれて、孔の大きさが大
きくなり、隣接する段間の間隔が狭くなり、且つ各段の
周方向の孔の数が多くなるので、−様にガスを流出でき
て、−様な厚さで基板に膜を形成できる。[Function] When the gas outflow holes are distributed and provided in this way, the size of the holes becomes larger from the center of the shower electrode plate toward the outer periphery, the interval between adjacent stages becomes narrower, and the periphery of each stage becomes smaller. Since the number of holes in the direction increases, gas can flow out in the - direction, and a film can be formed on the substrate with a - direction thickness.
［実施例］
以下、本発明の実施例を図面を参照して詳細に説明する
。第１図に示すように本実施例のシャワー電極４におい
ては、半径Ｒのシャワー電極板７に同心状にｎ段にガス
流出孔８を設けるに際し、各段の各ガス流出孔８のシャ
ワー電極板７の中心からの孔位置ｒｋ （ただし、ｋは
前記ｎ段のうちシャワー電極板７の外周側から数えた段
数であって１≦ｋ≦ｎ）は
ｒｋ＝Ｒ（１ｋ２／（１＋ｎ＞２）
とし、各段のガス流出孔８の孔径ＤｋはＤｋ∝ｒｋ
とし、各段の各ガス流出孔８の周方向の孔数Ｎ。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, in the shower electrode 4 of this embodiment, when gas outlet holes 8 are provided concentrically in n stages on the shower electrode plate 7 with a radius R, the shower electrodes of each gas outlet hole 8 in each stage are The hole position rk from the center of the plate 7 (where k is the number of stages counted from the outer periphery of the shower electrode plate 7 among the n stages, 1≦k≦n) is rk=R(1k2/(1+n>2) ), the hole diameter Dk of the gas outflow holes 8 in each stage is Dk∝rk, and the number of holes in the circumferential direction of each gas outflow hole 8 in each stage is N.
は Ｎ ｋ” ｒ Ｂ ’ とする。teeth N k” r B’ shall be.
具体的には、Ｒ＝７０ｍｍ、ｎ＝４とした場合、表１の
ようにする。Specifically, when R=70 mm and n=4, Table 1 shows.
表 １
表１では、Ｄは最大孔径を１．０ｍｍとし、ｒに比例配
分した。また、Ｎは最小孔数を４とし、ｒ３に対して比
例配分した。Table 1 In Table 1, D has a maximum pore diameter of 1.0 mm and is proportionally distributed to r. In addition, the minimum number of holes was set to 4, and N was distributed proportionally to r3.
この結果、第２図に示すように基板３の面の約９６％に
わたって±５％の誤差でほぼ一様な膜厚分布が得られた
。As a result, as shown in FIG. 2, a substantially uniform film thickness distribution was obtained over approximately 96% of the surface of the substrate 3 with an error of ±5%.
第３図は本発明のシャワー電極４の他の例を示したもの
である。本実施例のシャワー電極４は、前述したように
ガス流出孔８が設けられたシャワー電極板７が分配室形
成体９に対して交換可能にネジ１２で取付けられている
例を示したものである。FIG. 3 shows another example of the shower electrode 4 of the present invention. The shower electrode 4 of this embodiment is an example in which the shower electrode plate 7 provided with the gas outflow holes 8 is attached to the distribution chamber forming body 9 with screws 12 so as to be replaceable as described above. be.
［発明の効果］
以上説明したように本発明に係るプラズマＣＶＤ装置用
シャワー電極では、半径Ｒのシャワー電極板に同心状に
ｎ段にガス流出孔を設けるに際し、各段の各ガス流出孔
のシャワー電極板の中心からの孔位１ｒｋ （他だし、
ｋはｎ段のうちシャワー電極板の外周側から数えた段数
）は
ｒｋ−Ｒ（１−に２ ／ （１＋ｎ） ２）とし、各段
のガス流出孔の孔径Ｄｋは
Ｄｋ∝ｒｋ
とし、各段の各ガス流出孔の孔の周方向の孔の数Ｎｋは
Ｎｋ∝ｒｋ３
としたので、シャワー電極板の中心から外周に向うにつ
れて、孔の大きさが大きくなり、隣接する段間の孔の間
隔が狭くなり、且つ各段の周方向の孔の数が多くなるの
で、各段からほぼ一様にガスを流出させることができて
、−様な厚さで基板に膜を形成できる利点がある。[Effects of the Invention] As explained above, in the shower electrode for a plasma CVD apparatus according to the present invention, when gas outflow holes are provided concentrically in n stages on a shower electrode plate with a radius R, each gas outflow hole in each stage is Hole position 1rk from the center of the shower electrode plate (other than
k is the number of stages counted from the outer periphery of the shower electrode plate out of n stages) is rk-R (1-2/(1+n) 2), the hole diameter Dk of the gas outlet hole in each stage is Dk∝rk, and each The number of holes Nk in the circumferential direction of each gas outlet hole in a stage is Nk∝rk3, so the size of the holes increases from the center of the shower electrode plate toward the outer periphery, and the number of holes between adjacent stages increases. Since the spacing is narrower and the number of holes in the circumferential direction in each stage is increased, gas can flow out almost uniformly from each stage, which has the advantage of allowing films to be formed on the substrate with varying thicknesses. be.
第１図は本発明に係るシャワー電極の一実施例における
シャワー電極板の部分正面図、第２図は第１図に示すシ
ャワー電極を用いたときに径方向の膜厚分布図、第３図
は本発明に係るシャワー電極の他の実施例の縦断面図、
第４図は従来のプラズマＣＶＤ装置の縦断面図、第５図
（Ａ＞（Ｂ）は従来のシャワー電極の一例の正面図及び
該シャワー電極を用いたときの基板に対する膜厚分布図
、第６図（Ａ）（Ｂ）は従来のシャワー電極の他の例の
正面図及び該シャワー電極を用いたときの基板に対する
膜厚分布図である。
４・・・シャワー電極、６・・・ガス流出孔、７・・・
シャワー電極板、８・・・ガス分配室。
手続補正書く自制
昭和６３年 ２月２６日
１、事件の表示 特願昭６２−３０５７６７号２、発明
の名称
プラズマＣＶＤ装置用シャワー電極
３、補正をする者
事件との関係 特許出願人
（５２９）古河電気工業株式会社
４、代理人
東京都港区新橋４−３１−６ 文山ビル６階松本特許
事務所（電話４３７−５７８１番）図面の第１図及び第
４図
６、補正の内容
図面の「第１図」及び「第４図」を別紙の通り訂正する
。
＠１ 図 、FIG. 1 is a partial front view of a shower electrode plate in an embodiment of the shower electrode according to the present invention, FIG. 2 is a radial film thickness distribution diagram when the shower electrode shown in FIG. 1 is used, and FIG. is a longitudinal sectional view of another embodiment of the shower electrode according to the present invention,
FIG. 4 is a vertical cross-sectional view of a conventional plasma CVD apparatus, FIG. 6 (A) and (B) are a front view of another example of a conventional shower electrode and a film thickness distribution diagram on a substrate when the shower electrode is used. 4... Shower electrode, 6... Gas Outflow hole, 7...
Shower electrode plate, 8...gas distribution chamber. Self-restraint in writing procedural amendments February 26, 1988 1, Indication of the case Japanese Patent Application No. 62-305767 2, Name of the invention Shower electrode for plasma CVD equipment 3, Person making the amendment Relationship with the case Patent applicant (529) Furukawa Electric Co., Ltd. 4, Agent: Matsumoto Patent Office, 6th floor, Bunzan Building, 4-31-6 Shinbashi, Minato-ku, Tokyo (telephone number: 437-5781) Drawings 1 and 4 6, contents of amendments to the drawings "Figure 1" and "Figure 4" are corrected as shown in the attached sheet. @1 Figure,
Claims (1)
、前記シャワー電極板の裏側にガス分配室を形成して該
ガス分配室に供給されるガスを前記各ガス流出孔に分配
する分配室形成体とを備えたプラズマＣＶＤ装置用シャ
ワー電極において、半径Ｒの前記シャワー電極板に同心
状にｎ段に前記ガス流出孔を設けるに際し、 各段の前記各ガス流出孔の前記シャワー電極板の中心か
らの孔位置ｒ＿ｋ（ただし、ｋは前記ｎ段のうち前記シ
ャワー電極板の外周側から数えた段数であつて１≦ｋ≦
ｎ）は ｒ＿ｋ＝Ｒ｛１−ｋ＾２／（１＋ｎ）＾２｝とし、 各段の前記各ガス流出孔の孔径Ｄ＿ｋは Ｄ＿ｋ∝ｒ＿ｋ とし、 各段の前記各ガス流出孔の周方向の孔の数Ｎ＿ｋは Ｎ＿ｋ∝ｒ＿ｋ＾３ とすることを特徴とするプラズマＣＶＤ装置用シャワー
電極。[Scope of Claims] A shower electrode plate provided with a large number of distributed gas outlet holes, a gas distribution chamber formed on the back side of the shower electrode plate, and a gas supplied to the gas distribution chamber is distributed to each gas outlet. In a shower electrode for a plasma CVD apparatus equipped with a distribution chamber forming body that distributes into holes, when the gas outflow holes are provided in n stages concentrically on the shower electrode plate having a radius R, each of the gas outflow holes in each stage is provided. hole position r_k from the center of the shower electrode plate (where k is the number of stages counted from the outer circumferential side of the shower electrode plate among the n stages, and 1≦k≦
n) is r_k=R{1-k^2/(1+n)^2}, the hole diameter D_k of each gas outlet hole in each stage is D_k∝r_k, and the circumferential direction of each gas outlet hole in each stage is A shower electrode for a plasma CVD apparatus, characterized in that the number of holes N_k is N_k∝r_k^3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30576787A JPH01149964A (en) | 1987-12-04 | 1987-12-04 | Shower electrode for plasma cvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30576787A JPH01149964A (en) | 1987-12-04 | 1987-12-04 | Shower electrode for plasma cvd |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01149964A true JPH01149964A (en) | 1989-06-13 |
| JPH0431023B2 JPH0431023B2 (en) | 1992-05-25 |
Family
ID=17949102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30576787A Granted JPH01149964A (en) | 1987-12-04 | 1987-12-04 | Shower electrode for plasma cvd |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01149964A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120371A (en) * | 1989-10-01 | 1991-05-22 | Hirano Tecseed Co Ltd | Thin film production |
| GB2241250A (en) * | 1990-01-26 | 1991-08-28 | Fuji Electric Co Ltd | RF plasma CVD employing an electrode with a shower supply surface |
| US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| US5451290A (en) * | 1989-08-14 | 1995-09-19 | Applied Materials, Inc. | Gas distribution system |
| US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
| JP2004190132A (en) * | 2002-11-29 | 2004-07-08 | Kyocera Corp | Hot wire cvd system |
| WO2006017136A2 (en) * | 2004-07-12 | 2006-02-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| KR100712172B1 (en) * | 2004-03-01 | 2007-04-27 | 캐논 가부시끼가이샤 | Plasma processing apparatus and method of designing the same |
| CN100373535C (en) * | 2005-03-10 | 2008-03-05 | 三星电子株式会社 | Semi-conductor manufacturing installation |
| WO2010003093A3 (en) * | 2008-07-03 | 2010-04-08 | Applied Materials, Inc. | Apparatuses for atomic layer deposition |
| US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
| EP2453244A1 (en) * | 2010-11-15 | 2012-05-16 | Rosemount Aerospace Inc. | Static port apparatus |
| US9200368B2 (en) | 2004-05-12 | 2015-12-01 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| JP2017028220A (en) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | Electrode plate for plasma processing apparatus |
| US9580804B2 (en) | 2007-06-22 | 2017-02-28 | Applied Materials, Inc. | Diffuser support |
-
1987
- 1987-12-04 JP JP30576787A patent/JPH01149964A/en active Granted
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451290A (en) * | 1989-08-14 | 1995-09-19 | Applied Materials, Inc. | Gas distribution system |
| JPH03120371A (en) * | 1989-10-01 | 1991-05-22 | Hirano Tecseed Co Ltd | Thin film production |
| GB2241250A (en) * | 1990-01-26 | 1991-08-28 | Fuji Electric Co Ltd | RF plasma CVD employing an electrode with a shower supply surface |
| US6379466B1 (en) | 1992-01-17 | 2002-04-30 | Applied Materials, Inc. | Temperature controlled gas distribution plate |
| US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| JP2004190132A (en) * | 2002-11-29 | 2004-07-08 | Kyocera Corp | Hot wire cvd system |
| KR100712172B1 (en) * | 2004-03-01 | 2007-04-27 | 캐논 가부시끼가이샤 | Plasma processing apparatus and method of designing the same |
| US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
| US9200368B2 (en) | 2004-05-12 | 2015-12-01 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US10262837B2 (en) | 2004-05-12 | 2019-04-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
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| WO2006017136A3 (en) * | 2004-07-12 | 2006-09-21 | Applied Materials Inc | Plasma uniformity control by gas diffuser curvature |
| CN100373535C (en) * | 2005-03-10 | 2008-03-05 | 三星电子株式会社 | Semi-conductor manufacturing installation |
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| US8365591B2 (en) | 2010-11-15 | 2013-02-05 | Rosemount Aerospace Inc. | Static port apparatus |
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| JP2017028220A (en) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | Electrode plate for plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0431023B2 (en) | 1992-05-25 |
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