JPH01149414A - Semiconductor porcelain substance - Google Patents
Semiconductor porcelain substanceInfo
- Publication number
- JPH01149414A JPH01149414A JP62308238A JP30823887A JPH01149414A JP H01149414 A JPH01149414 A JP H01149414A JP 62308238 A JP62308238 A JP 62308238A JP 30823887 A JP30823887 A JP 30823887A JP H01149414 A JPH01149414 A JP H01149414A
- Authority
- JP
- Japan
- Prior art keywords
- rubidium
- oxide
- substance
- crystal grain
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 title abstract description 15
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 25
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 16
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 9
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 16
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 abstract description 9
- 239000005751 Copper oxide Substances 0.000 abstract description 8
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 8
- WPFGFHJALYCVMO-UHFFFAOYSA-L rubidium carbonate Chemical compound [Rb+].[Rb+].[O-]C([O-])=O WPFGFHJALYCVMO-UHFFFAOYSA-L 0.000 abstract description 7
- 229910000026 rubidium carbonate Inorganic materials 0.000 abstract description 7
- -1 rubidium peroxide Chemical class 0.000 abstract description 4
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 abstract description 3
- MQZGYYYBCTXEME-UHFFFAOYSA-N [Rb][Rb] Chemical compound [Rb][Rb] MQZGYYYBCTXEME-UHFFFAOYSA-N 0.000 abstract description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- 150000003298 rubidium compounds Chemical class 0.000 abstract description 3
- 229910001952 rubidium oxide Inorganic materials 0.000 abstract description 3
- CWBWCLMMHLCMAM-UHFFFAOYSA-M rubidium(1+);hydroxide Chemical compound [OH-].[Rb+].[Rb+] CWBWCLMMHLCMAM-UHFFFAOYSA-M 0.000 abstract description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910001953 rubidium(I) oxide Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical group [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は粒界誘電体層型の半導体磁器コンデンサ等とし
て用いられる半導体磁器物質に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor ceramic material used as a grain boundary dielectric layer type semiconductor ceramic capacitor or the like.
一般にチタン酸ストロンチウム（ＳｒＴｉ（ｈ）等を主
体とする半導体磁器の結晶粒界に誘電体層を形成して構
成される半導体磁器物質は誘電率が高く、また電気的安
定性に優れていることから、近時コンデンサ、バリスタ
ー、サーミスター等に広く利用されている。Semiconductor porcelain materials that are generally composed of strontium titanate (SrTi(h), etc.) and formed by forming a dielectric layer on the crystal grain boundaries have a high dielectric constant and excellent electrical stability. Since then, it has been widely used in capacitors, varistors, thermistors, etc.
ところで従来におけるこの種の半導体磁器物質は主成分
であるチタン酸ストロンチウムに、結晶粒の半導体化の
ための原子価制御剤として酸化ニオブ（ＮｂｚＯｓ）
、酸化イツトリウム（Ｙ２Ｏ２）等を、また焼結助剤と
して酸化ケイ素（Ｓｉ（ｈ）、酸化マンガン（ＭｎＯｚ
）等を夫々添加し、中性又は還元雰囲気中で焼結し、得
られた半導体磁器に拡散物質として酸化ビスマス（Ｂｉ
ｚＯｚ） 、酸化銅（ＣｕＯ） 、酸化マンガン（Ｍｎ
Ｏｚ）等の混合物を結晶粒界に熱拡散させることにより
得ている（特公昭５８−２３９２２号）。By the way, conventional semiconductor ceramic materials of this type contain strontium titanate, which is the main component, and niobium oxide (NbzOs) as a valence control agent to make the crystal grains semiconductor.
, yttrium oxide (Y2O2), etc., and silicon oxide (Si(h), manganese oxide (MnOz) as a sintering aid).
), sintered in a neutral or reducing atmosphere, and added bismuth oxide (Bi) as a diffusion substance to the resulting semiconductor porcelain.
zOz), copper oxide (CuO), manganese oxide (Mn
It is obtained by thermally diffusing a mixture of 100 oz) and the like into grain boundaries (Japanese Patent Publication No. 58-23922).
（発明が解決しようとする問題点〕
拡散物質として用いる混合物はその成分が、例えばコン
デンサの電気的特性に大きな影響を及ぼすことは知られ
ているが、従来用いられている混合物である酸化ビスマ
ス（Ｂｉ２０：＋）はコンデンサとしての誘電率（εａ
ｐｐ）、誘、型圧接（ｔａｎδ）について優れた特性が
得られる反面、絶縁抵抗率（ρａｐｐ）が低く、また酸
化銅（ＣｕＯ） 、或いは酸化マンガン（ＭｎＯｚ）は
絶縁抵抗率（ρａｐｐ）について優れた特性が得られる
反面、誘電率（εａｐｐ）が低く、更にこれら各金属酸
化物の混合物を用いた場合にも平均的レベルの電気的特
性は得られるものの誘電率、誘電正接、絶縁抵抗率のい
ずれにも十分な値が得られないという問題があった。(Problems to be Solved by the Invention) It is known that the components of mixtures used as diffusion substances have a large effect on the electrical characteristics of capacitors, for example, but bismuth oxide (bismuth oxide), which is a mixture used conventionally, Bi20:+) is the dielectric constant (εa
Although excellent properties can be obtained in terms of pp), dielectric strength, and type pressure welding (tan δ), the insulation resistivity (ρapp) is low, and copper oxide (CuO) or manganese oxide (MnOz) has excellent insulation resistivity (ρapp). On the other hand, the dielectric constant (εapp) is low, and even if a mixture of these metal oxides is used, average level electrical properties can be obtained, but the dielectric constant, dielectric loss tangent, and insulation resistivity are low. In either case, there was a problem in that sufficient values could not be obtained.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは誘電率、絶縁抵抗率が共に向上した
粒界誘電体層型の半導体磁器物質を提供することにある
。The present invention has been made in view of the above circumstances, and its object is to provide a grain boundary dielectric layer type semiconductor ceramic material with improved dielectric constant and insulation resistivity.
本発明に係る半導体磁器物質は、半導体磁器の結晶粒の
結晶粒界に、酸化ビスマス（Ｂｉ２０３） １０〜８０
モル％、 酸（Ｅ［［ｃｕｏｏｏ〜４０モル％及びルビ
ジウム系化合物１０〜８０モル％からなる組成物が拡散
して、前記結晶粒界に誘電体層を形成してなることを特
徴とする。The semiconductor ceramic material according to the present invention contains bismuth oxide (Bi203) 10 to 80 at the grain boundaries of the crystal grains of the semiconductor ceramic.
A dielectric layer is formed at the grain boundaries by diffusion of a composition consisting of ~40 mole percent of an acid (E[[cuooo] and 10 to 80 mole percent of a rubidium-based compound).
本発明にあってはこれによって誘電率、絶縁抵抗率のい
ずれにも高い値が得られる。According to the present invention, high values of both dielectric constant and insulation resistivity can be obtained.
例えば主成分であるチタン酸ストロンチウム（ＳｒＴｉ
Ｏ３）に、酸化ニオブ（ＮｂｚＯｓ）を０．１〜２モル
％、酸化マンガン（ＭｎＯ□）を０．１〜２モル％の各
範囲で添加したものを原料として直径１０ｍｍ、厚さ０
゜８鶴の円板状の素体に加圧成形し、次にこの円板状の
素体を、例えば水素１〜１５％、窒素９９〜８５％の還
元雰囲気中で１４００〜１５４０℃で４〜１０時間焼成
して半導体磁器を得、更にこの半導体磁器に拡散物質と
して下記の混合物を塗布し、大気中で１０００〜１３５
０℃で１〜２時間焼成を行って本発明の半導体磁器物質
を得、その後この半導体磁器物質の両面に、例えば銀ペ
ーストを付着させ８００ ’Ｃで焼付けて電極を形成し
、半導体磁器コンデンサを得た。For example, the main component strontium titanate (SrTi)
O3) with 0.1 to 2 mol% of niobium oxide (NbzOs) and 0.1 to 2 mol% of manganese oxide (MnO
゜8 Crane is pressure-molded into a disc-shaped element body, and then this disc-shaped element body is heated at 1400 to 1540°C in a reducing atmosphere containing, for example, 1 to 15% hydrogen and 99 to 85% nitrogen. Semiconductor porcelain was obtained by firing for ~10 hours, and the following mixture was applied as a diffusion substance to this semiconductor porcelain, and the mixture was heated to 1000 to 135% in air.
Firing is performed at 0°C for 1 to 2 hours to obtain the semiconductor ceramic material of the present invention, and then, for example, silver paste is deposited on both sides of this semiconductor ceramic material and baked at 800'C to form electrodes, thereby forming a semiconductor ceramic capacitor. Obtained.
なお円板状の素体の焼結用還元雰囲気としては水素１〜
１５％、窒素９９〜８５％に限らず、結晶粒が十分半導
体化され得る雰囲気であればよい。また電極材料につい
てもＡｇに限らすＡ／、その他の材料も用いられる。The reducing atmosphere for sintering the disc-shaped element body is hydrogen 1~
The atmosphere is not limited to 15% nitrogen and 99 to 85% nitrogen, but any atmosphere can be used as long as the crystal grains can be sufficiently converted into a semiconductor. Further, the electrode material is not limited to Ag, but other materials may also be used.
拡散物質である混合物は酸化ビスマス（ＢｉｚＯｚ）を
１０〜８０モル％、酸化銅（ＣｕＯ）を１０〜４０モル
％及びルビジウム系化合物である炭酸セシウム（Ｒｂｚ
ＣＯｚ） 。The mixture as a diffusive substance contains 10 to 80 mol% of bismuth oxide (BizOz), 10 to 40 mol% of copper oxide (CuO), and cesium carbonate (Rbz), which is a rubidium-based compound.
COz).
水酸化ルビジウム（ＲｂＯＨ） 、酸化ルビジウム（Ｒ
ｂ２０） 。Rubidium hydroxide (RbOH), Rubidium oxide (R
b20).
三酸化二ルビジウム（ＲｂｚＯ＋） 、過酸化ルビジウ
ム（Ｒｈ２０□）、超酸化ルビジウム（ＲｂＯ□）のう
ちの１種又は２種以上が１０〜８０モル％からなる組成
よりなる。The composition consists of 10 to 80 mol% of one or more of dirubidium trioxide (RbzO+), rubidium peroxide (Rh20□), and rubidium superoxide (RbO□).
第１．２．３図は拡散物質である混合物として酸化ビス
マス、酸化銅及び炭酸ルビジウムの各成分についてその
組成を変えた混合物について、その電気的特性を調べた
結果を示している。Figure 1.2.3 shows the results of examining the electrical characteristics of mixtures that are diffusive substances, with different compositions of bismuth oxide, copper oxide, and rubidium carbonate.
第１図は誘電率（εａｐｐ） ｘ １（ｌ’値を、また
第２図は誘電正接（ｔａｎδ）値（％）を、更に第３図
は絶縁抵抗率（ρａｐｐ） ｘ １０伺０値（Ω−ｃｍ
）を夫々示すグラフであり、グラフ中の黒丸印は夫々の
成分組成を拡散物質として得た半導体磁器物質の各供試
材を、また数値は１０枚の試料の誘電率値、誘電正接値
、絶縁抵抗値の平均値を示している。Figure 1 shows the dielectric constant (εapp) x 1 (l' value), Figure 2 shows the dielectric loss tangent (tan δ) value (%), and Figure 3 shows the insulation resistivity (ρapp) x 10 to 0 value ( Ω-cm
), and the black circles in the graph indicate the respective sample materials of semiconductor ceramic materials obtained as diffusion substances, and the numerical values indicate the dielectric constant value, dielectric loss tangent value, and dielectric loss tangent value of the 10 samples. Shows the average value of insulation resistance.
なお電気的特性のうち、誘電率（εａｐｐ）、誘電正接
（ｔａｎδ）は作成した半導体磁器コンデンサに周波数
１ｋ）ｌｚ、電圧１ｖを印加して測定した値であり、ま
た絶縁抵抗率（ρａｐｐ）は２５Ｖの直流電圧印加１分
後の電流値を測定し、これに基づいて算出した値である
。Among the electrical characteristics, the dielectric constant (εapp) and the dielectric loss tangent (tanδ) are the values measured by applying a frequency of 1k)lz and a voltage of 1v to the prepared semiconductor ceramic capacitor, and the insulation resistivity (ρapp) is The current value was measured one minute after the application of a DC voltage of 25 V, and the value was calculated based on this.
第１．２．３図から明らかな如く、酸化ビスマス（Ｂｉ
ｚＯ＋）を１０〜８０モル％、酸化ｗ４（ＣｕＯ）を１
０〜４０モル％、炭酸ルビジウムを１０〜８０モル％の
範囲内とした混合物を拡散物質に用いた本発明組成物に
あっては、誘電率、誘電正接、絶縁抵抗率のいずれにお
いても優れた電気的特性を示しているのが分かる。As is clear from Figure 1.2.3, bismuth oxide (Bi
zO+) from 10 to 80 mol%, oxidized w4(CuO) to 1
The composition of the present invention using a mixture containing 0 to 40 mol% of rubidium carbonate and 10 to 80 mol% of rubidium carbonate as a diffusing substance has excellent dielectric constant, dielectric loss tangent, and insulation resistivity. It can be seen that it shows electrical characteristics.
これに対して酸化ビスマスが１０モル％未満、又は９０
モル％以上では第１図から明らかなように誘電率（εａ
ｐｐ）が明らかに低く、更に酸化ビスマス単体では第３
図から明らかなように絶縁抵抗率（ρａｐｐ）に著しい
低下が認められる。In contrast, bismuth oxide is less than 10 mol%, or 90%
As is clear from Figure 1, the dielectric constant (εa
pp) is clearly low, and in addition, bismuth oxide alone ranks third.
As is clear from the figure, a significant decrease in insulation resistivity (ρapp) is observed.
また、酸化銅が５０モル％以上では第１．２図から明ら
かな如く誘電率、誘電正接が共に劣り、また１０モル％
未満では第１．３図から明らかな如く誘電率、絶縁抵抗
率は共に十分な値が得られていないことが分かる。In addition, when the copper oxide content exceeds 50 mol%, both the dielectric constant and the dielectric loss tangent are inferior, as is clear from Figure 1.2;
As is clear from FIG. 1.3, if the value is less than that, sufficient values for both dielectric constant and insulation resistivity cannot be obtained.
更に炭酸ルビジウムが９０モル％以上、又は１０モル％
未満では誘電率に劣った値が認められる。Furthermore, rubidium carbonate is 90 mol% or more, or 10 mol%
Below this value, an inferior value of dielectric constant is observed.
ちなみに本発明物質に用いる拡散物質として酸化ビスマ
スを４５モル％、酸化銅ヲ１０モル％、炭酸ルビジウム
を４５モル％からなる組成の混合物を用いた場合、酸化
ビスマス単体又は酸化銅単体を用いる場合と比較して誘
電率で１．４倍乃至１．８倍、絶縁抵抗率で２桁の向上
が図れ、誘電正接についてもほとんどその特性を劣化さ
せていないことが分かった。Incidentally, when a mixture of 45 mol% bismuth oxide, 10 mol% copper oxide, and 45 mol% rubidium carbonate is used as a diffusive substance for the substance of the present invention, the difference is the same as when bismuth oxide alone or copper oxide alone is used. In comparison, it was found that the dielectric constant was improved by 1.4 to 1.8 times, the insulation resistivity was improved by two orders of magnitude, and the properties of the dielectric loss tangent were hardly deteriorated.
なお、拡散物質の一つとして炭酸ルビジウムの場合につ
き説明したが、他の水酸化ルビジウム。Although the case of rubidium carbonate was explained as one of the diffusive substances, other rubidium hydroxides may also be used.
酸化ルビジウム、三酸化二ルビジウム、過酸化ルビジウ
ム、超酸化ルビジウム又はこれらの２種以上の混合物に
ついても１０〜８０モル％の範囲内で略同様の効果があ
ることが確認された。It was confirmed that rubidium oxide, dirubidium trioxide, rubidium peroxide, rubidium superoxide, or a mixture of two or more thereof had substantially similar effects within the range of 10 to 80 mol%.
また、本発明に係る半導体磁器物質をコンデンサに利用
する場合について説明したが、本発明はこれに限るもの
ではなくバリスタ、サーミスタ等の他の用途にも使える
ことは言うまでもない。Moreover, although the case where the semiconductor ceramic material according to the present invention is used in a capacitor has been described, it goes without saying that the present invention is not limited to this and can be used in other applications such as varistors and thermistors.
以上の如く本発明にあっては、拡散物質として酸化ビス
マス、酸化銅及びルビジウム系化合物を組合せてなる組
成物を用いであるから誘電率、絶縁抵抗率が大幅に向上
し得る優れた効果を奏するものである。As described above, in the present invention, since a composition comprising a combination of bismuth oxide, copper oxide and rubidium compounds is used as a diffusing substance, the dielectric constant and insulation resistivity can be significantly improved. It is something.
第１図は拡散物質の組成と誘電率との関係を示す図、第
２図は拡散物質の組成と誘電正接との関係を示す図、第
３図は拡散物質の組成と絶縁抵抗率との関係を示す図で
ある。
特 許 出願人 住友金属工業株式会社代理人 弁理
士 河 野 登 失策１図
第２図Figure 1 is a diagram showing the relationship between the composition of the diffusion material and dielectric constant, Figure 2 is a diagram showing the relationship between the composition of the diffusion material and the dielectric loss tangent, and Figure 3 is the diagram showing the relationship between the composition of the diffusion material and insulation resistivity. It is a figure showing a relationship. Patent Applicant Sumitomo Metal Industries Co., Ltd. Agent Patent Attorney Noboru Kono Mistakes Figure 1 Figure 2
Claims (1)
Ｂｉ＿２Ｏ＿３）１０〜８０モル％，酸化銅（ＣｕＯ）
１０〜４０モル％及びルビジウム系化合物１０〜８０モ
ル％からなる組成物が拡散して、前記結晶粒界に誘電体
層を形成してなることを特徴とする半導体磁器物質。1. Bismuth oxide (
Bi_2O_3) 10-80 mol%, copper oxide (CuO)
A semiconductor ceramic material characterized in that a composition comprising 10 to 40 mol % and 10 to 80 mol % of a rubidium-based compound is diffused to form a dielectric layer at the grain boundaries.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62308238A JP2679065B2 (en) | 1987-12-04 | 1987-12-04 | Semiconductor porcelain material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62308238A JP2679065B2 (en) | 1987-12-04 | 1987-12-04 | Semiconductor porcelain material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01149414A true JPH01149414A (en) | 1989-06-12 |
| JP2679065B2 JP2679065B2 (en) | 1997-11-19 |
Family
ID=17978596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62308238A Expired - Lifetime JP2679065B2 (en) | 1987-12-04 | 1987-12-04 | Semiconductor porcelain material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2679065B2 (en) |
-
1987
- 1987-12-04 JP JP62308238A patent/JP2679065B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2679065B2 (en) | 1997-11-19 |
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