JPH01143283A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPH01143283A JPH01143283A JP30072287A JP30072287A JPH01143283A JP H01143283 A JPH01143283 A JP H01143283A JP 30072287 A JP30072287 A JP 30072287A JP 30072287 A JP30072287 A JP 30072287A JP H01143283 A JPH01143283 A JP H01143283A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- type
- thin film
- quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 67
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 239000012792 core layer Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 241001547860 Gaya Species 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は量子細線あるいは量子箱を活性層に持つ半導体
レーザ素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser device having a quantum wire or a quantum box in its active layer.
従来の技術
量子サイズ効果を利用した半導体レーザ素子は低しきい
値電流高発光効率、低チャーピング、高速変調が可能等
の特徴を持つ。特に量子細線や量子箱を活性層中に持つ
半導体レーザ素子はキャリアのエネルギー準位の縮退が
解けるだめ上記した特徴が一層顕著になる。第５図に従
来技術の一例を示す。すなわち、活性層に量子細線を持
つ半導体レーザ素子の活性層、ｐ型クラッド層及びｎ型
クラッド層の部分のみを示す。５０１はｎ型Ａ ｌ １
−ｘ Ｇ ａ ｘ Ａ ｓ クラ−）ド層、６０２は
Ａ１１−ｙＧａｙＡｌｌ活性層、５０３はｐ型Ａ ｌ
１−ｘ Ｇ ａ ｘ Ａ ｓクラッド層である。尚Ｘの
値はｙよりも大きく１よりも小さい値である。活性層５
０２の内部にはＧ ａ Ａ ｓから成り幅と厚みが約１
００オングストロームあるいはそれ以下の量子細線領域
５０４が間隙５０５を隔てて並んでいる。この半導体レ
ーザに電流を通じると活性層に正孔と電子が注入される
。量子細線領域５０４は活性層中で最も禁制帯幅が小さ
く且つエネルギー準位の縮退がかなり解けているので、
この領域に流れ込み捕獲された電子と正孔は狭いエネル
ギー範囲の中で分布する。したがってレーザ発振に際し
ては特定の波長域だけの利得が上昇し、前述の特徴を現
出するに至る。Semiconductor laser devices using conventional technology quantum size effects have features such as low threshold current, high luminous efficiency, low chirping, and high-speed modulation. In particular, in a semiconductor laser device having a quantum wire or a quantum box in its active layer, the above-mentioned characteristics become more pronounced because the degeneracy of carrier energy levels is resolved. FIG. 5 shows an example of the prior art. That is, only the active layer, p-type cladding layer, and n-type cladding layer of a semiconductor laser device having a quantum wire in the active layer are shown. 501 is n-type Al 1
-xGaxAs cladding layer, 602 is A11-yGayAll active layer, 503 is p-type Al
1-xGaxAs cladding layer. Note that the value of X is larger than y and smaller than 1. active layer 5
The inside of 02 is made of Ga As and has a width and thickness of about 1
Quantum wire regions 504 of 0.00 angstroms or less are arranged with a gap 505 in between. When current is passed through this semiconductor laser, holes and electrons are injected into the active layer. Since the quantum wire region 504 has the smallest forbidden band width in the active layer and the degeneracy of energy levels is considerably resolved,
The electrons and holes that flow into this region and are captured are distributed within a narrow energy range. Therefore, during laser oscillation, the gain increases only in a specific wavelength range, resulting in the above-mentioned characteristics.
発明が解決しようとする問題点
ところが上記した構成によると１間隙５０５を通り抜け
る電子と正孔は発光に寄与せず無効電流となること、ま
た発光波長が、活性層５０２の材料と、量子細線領域の
材料及び寸法とのみで決まってしまい、波長の選択にお
ける設計の自由度が小さい等の問題があった。Problems to be Solved by the Invention However, according to the above configuration, electrons and holes passing through one gap 505 do not contribute to light emission and become invalid current, and the emission wavelength is different from the material of the active layer 502 and the quantum wire region. The wavelength is determined only by the material and dimensions of the wavelength, which poses problems such as a small degree of design freedom in selecting the wavelength.
問題点を解決するための手段
本発明はこのような問題点を解決するために、活性層が
量子細線や量子箱状に分断された量子井戸層と、前記量
子井戸層の分断された箇所を補填して成り前記量子井戸
層より大きい禁制帯幅を持つ高抵抗層と、前記量子井戸
層と高抵抗層にはさまれた部分に存在する間隙を補填し
且つこれらの層の上下をはさんで成り前記量子井戸層よ
りも大きい禁制帯幅を持つ半導体層とから成り、前記活
性層の上下にｐ型及びｎ型のクラッド層を持つ半導体レ
ーザ素子を提供するものである。Means for Solving the Problems In order to solve these problems, the present invention provides a quantum well layer in which the active layer is divided into quantum wires or quantum box shapes, and a quantum well layer in which the quantum well layer is divided into parts. a high-resistance layer having a larger forbidden band width than the quantum well layer, and a gap existing in a portion sandwiched between the quantum well layer and the high-resistance layer and sandwiching the top and bottom of these layers; and a semiconductor layer having a larger forbidden band width than the quantum well layer, and provides a semiconductor laser element having p-type and n-type cladding layers above and below the active layer.
作 用
本発明によれば、活性層に注入された電流のうち量子細
線あるいは量子箱を通過しない無効な電流が低減できる
ので、より一層のしきい値電流の低減９発光効率の高効
率化等が実現できると共に、量子細線あるいは量子箱中
にできるエネルギー準位を本発明によって新たに付加さ
れた高抵抗層の材料の組成を変えることによっても制御
できるため発振波長の選択における設計の自由度が大き
くなる。Effects According to the present invention, of the current injected into the active layer, the invalid current that does not pass through the quantum wire or the quantum box can be reduced, so that the threshold current can be further reduced.9 Higher luminous efficiency, etc. In addition, the energy level created in the quantum wire or quantum box can be controlled by changing the composition of the material of the high-resistance layer newly added by the present invention, which increases the degree of design freedom in selecting the oscillation wavelength. growing.
実施例 以下に本発明に基づ〈実施例を示す。第１図。Example Examples based on the present invention are shown below. Figure 1.
第２図はそれぞれ本発明による第１の実施例の斜視図及
び部分的な（第１図のＡ−Ａ’線）断面図を示す。１０
１はｎ型ＧａＡｓ基板でこの上に順次ｎ型Ａ ｌ １．
、、、 ｘ Ｇ ａ ｘＡｓクラッド層１０２．活性Ｍ
ｌ １０３ｔｐ型Ａ ｌ １−ｘ Ｇ ａ ｘＡ ｓク
ラッド層１０４．ｐ型ＧａＡｓキャップ層１０５が形成
されている。ｐ型Ａ ｌ １−、 Ｇ ａ ｘ Ａ ｓ
クラ−ｔド層１０４．ｐ型Ｇ ａ Ａ ｓキャラプ層１
０６は幅２ミクロンのストライプ状にエツチングされて
いる。１０６，１０７はそれぞれｐ型とｎ型のオーミッ
ク電極で例えばＡｕＺｎとＡｕＧｅＮｉである。図中Ａ
−Ａ／における断面の一部分を第２図に示している。FIG. 2 shows a perspective view and a partial sectional view (along line AA' in FIG. 1) of a first embodiment of the invention, respectively. 10
1 is an n-type GaAs substrate on which n-type Al 1.
, , xGaxAs cladding layer 102. Active M
l 103tp type A l 1-x G a xA s cladding layer 104. A p-type GaAs cap layer 105 is formed. p-type A l 1-, G a x A s
Clad layer 104. p-type G a As character layer 1
06 is etched in a stripe shape with a width of 2 microns. 106 and 107 are p-type and n-type ohmic electrodes, for example, AuZn and AuGeNi. A in the diagram
A part of the cross section at -A/ is shown in FIG.
図中の第１図と同じ番号は第１図と共通の部分を示す。The same numbers as in FIG. 1 in the figure indicate parts common to FIG. 1.
活性層１０３は４種類の層から成っている。すなわち、
Ｇ ａ Ａ ｓからなる量子細線２ｏ１．隣り合った量
子細線２０１の間を埋めるＣｒ ドープのＡ Ｉ 、
−２Ｇ ａ ｚ Ａ ｓ高抵抗ｆｉ２０２． これら
の層をはさんで成るｎ型Ａ ｌ １−ｙ Ｇ ａ ｙ
Ａ ｍ コア層２０３．ｐ型Ａ１１−アＧａｙＡｓコア
層２０４である。これらの層はまず、ｎ型Ｇ ａ Ａ
ｓ基板１０１の上に、ｎ型Ａ１１−ｘＧａＸＡｓクラッ
ド層１０２．ｎ型Ａ１１−アＧａｙＡ８コア層２０３゜
Ｇ ａ Ａ ｓ量子細線用半導体薄膜を順次成長した後
、幅１０００オングストローム、周期２０００オングス
トロ一ム程度のストライプ状のレジストパターンを表面
に形成し、これをエツチングマスクとして臭化水素系の
エツチング液でエツチングを行ない量子細線２０１を形
成した後、レジストを除去し、Ａｅｌ−２Ｇａ２Ａ８高
抵抗層、ｐ型Ａｌ １− 、Ｇａ ｙＡ ｓコア層等を
順次成長することで得られる。尚、添え字ｙはＩよりも
大きく１よりも小さい。このような構成によると、注入
された電流は高抵抗層２０２を通れないので、はとんど
が量子細線２０１を通過することになシ効率よく捕獲さ
れる。また、高抵抗層の組成を変化させることによシ、
発光のピーク波長を制御することができる。The active layer 103 consists of four types of layers. That is,
Quantum wire 2o1. Cr-doped AI filling the space between adjacent quantum wires 201,
-2G az A s high resistance fi202. n-type Al 1-y Ga y consisting of these layers
A m core layer 203. This is a p-type A11-A GayAs core layer 204. These layers are first of n-type Ga A
On the s-substrate 101, an n-type A11-xGaXAs cladding layer 102. After sequentially growing the n-type A11-A Gay A8 core layer 203°GaAs quantum wire semiconductor thin film, a striped resist pattern with a width of 1000 angstroms and a period of about 2000 angstroms was formed on the surface, and this was etched. After etching is performed using a hydrogen bromide-based etching solution as a mask to form a quantum wire 201, the resist is removed and an Ael-2Ga2A8 high-resistance layer, a p-type Al1-, a GayAs core layer, etc. are sequentially grown. It can be obtained with Note that the subscript y is larger than I and smaller than 1. According to such a configuration, the injected current cannot pass through the high resistance layer 202, so that most of it passes through the quantum wire 201 and is efficiently captured. In addition, by changing the composition of the high resistance layer,
The peak wavelength of light emission can be controlled.
第３図、第４図は本発明による第２の実施例の斜視図及
び部分的な第３図のＢ−Ｂ’線断面を示す。3 and 4 show a perspective view of a second embodiment of the present invention and a partial cross section taken along the line BB' in FIG. 3. FIG.
図中、番号が第１図、第２図と同じ部分は同じ番号を持
つ層と同様の組成２機能を持つ。この素子のｐ型クラッ
ド層１０４．活性層１０３．ｐ型キャップ層１０５は、
ｐ型Ａ１１−！ＧａｘＡｓ埋込層３０１、ｎ型Ａｅ１−
ｘＧａｘＡｓ埋込層３０２で埋込まれているため、キャ
リアと光が活性層１０３の中にとじこめられる。第４図
は第３図で示しだＢＢ／における断面を部分的に示す。In the figure, portions with the same numbers as in FIGS. 1 and 2 have the same composition and function as the layers with the same numbers. p-type cladding layer 104 of this device. Active layer 103. The p-type cap layer 105 is
p-type A11-! GaxAs buried layer 301, n-type Ae1-
Since it is buried in the xGaxAs buried layer 302, carriers and light are confined in the active layer 103. FIG. 4 shows a partial cross-section at BB/ shown in FIG.
活性層１０３中には第１の実施例と同様量子細線２０２
が多数存在するが、異なる点は多層に積層されている点
である。従って各層の間にＡ１１−ア１ＧａｙｚＡｓバ
リア層４０１が挿入されている。ｙ′はｙと等しくても
よいし、異なっても良い。このようにすると、活性層に
注入された電流は量子細線２０２とバリア層４０１とか
ら成る細長い電流パスを流れるので、量子細線２０２に
正孔と電子は効率良く捕獲されレーザ発振に寄与する。In the active layer 103, there are quantum wires 202 as in the first embodiment.
There are many types, but the difference is that they are stacked in multiple layers. Therefore, an A11-A1GayzAs barrier layer 401 is inserted between each layer. y' may be equal to or different from y. In this way, the current injected into the active layer flows through a long and narrow current path consisting of the quantum wire 202 and the barrier layer 401, so holes and electrons are efficiently captured in the quantum wire 202 and contribute to laser oscillation.
尚、本構成においても高抵抗層２０３の組成を変化させ
ることにより発光のピーク波長を制御できる。Note that also in this configuration, the peak wavelength of light emission can be controlled by changing the composition of the high-resistance layer 203.
尚、ここに示した２つの実施例では、レーザの共振器と
してフラプリ・ベロー型を用いているが、分布帰還型や
分布ブラック反射型の共振器を用いてもなんら問題はな
い。また本実施例ではＧ ａ Ａ ｇ ／Ａ Ｉ Ｇ
ａ Ａ ｓ系の化合物半導体系を用いたが、ＩｎＧａＡ
ｓＰ／ＩｎＰ系やＡＩＧａＩｎＰ／ＧａＡｓ系、あるい
はそれ以外の化合物半導体を用いてもなんら問題はない
。また、量子細線の代わりに量子箱を用いてもなんら問
題はない。In the two embodiments shown here, a Frapley-Bellows type resonator is used as the laser resonator, but there is no problem in using a distributed feedback type or distributed black reflection type resonator. In addition, in this example, G a A g /A I G
aAs-based compound semiconductor system was used, but InGaA
There is no problem in using sP/InP-based, AIGaInP/GaAs-based, or other compound semiconductors. Moreover, there is no problem in using a quantum box instead of a quantum wire.
発明の効果
本発明によれば、量子細線や量子箱を持つ半導体レーザ
素子において発光に寄与しない電流が低減されるため、
しきい値電流の低減２発光効率の向上、さらには低チャ
ーピング性、高速変調が可能等の効果を現出し得る。ま
た、ｐｎ接合中に高抵抗層が存在するので、容量も低減
でき、高速動作が容易になる。Effects of the Invention According to the present invention, current that does not contribute to light emission is reduced in a semiconductor laser device having a quantum wire or a quantum box.
Effects such as reduction in threshold current, improvement in luminous efficiency, low chirping property, and high-speed modulation can be achieved. Furthermore, since a high resistance layer is present in the pn junction, capacitance can be reduced and high-speed operation can be facilitated.
第１図は本発明による第１の実施例の半導体レーザ素子
の斜視図、第２図は第１の実施例の部分的な断面図、第
３図は本発明による第２の実施例のレーザ素子の斜視図
、第４図は第２の実施例のレーザ素子の要部断面図、第
５図は従来のレーザの部分的な斜視図である。
１０１−−−−−・ＧａＡｓ基板、１０２，１０４・旧
・・クラッド層、１０３・・・・・・活性層、１０５・
・・・・・Ｇ ａ Ａ ｓキャラプ層〇
代理人の氏名 弁理士 中 尾 敏 男 ほか１名憾
へ
城FIG. 1 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention, FIG. 2 is a partial cross-sectional view of the first embodiment, and FIG. 3 is a laser diode according to a second embodiment of the present invention. FIG. 4 is a sectional view of a main part of the laser device of the second embodiment, and FIG. 5 is a partial perspective view of a conventional laser. 101-----GaAs substrate, 102, 104-old cladding layer, 103--active layer, 105-
...G a As character group 〇 Name of agent Patent attorney Toshi Nakao Male and 1 other person Sorry
castle
Claims (2)
、前記半導体薄膜層の分断された箇所を補填して成る高
抵抗で且つ前記半導体薄膜層より大きい禁制帯幅を持つ
第１の半導体層と、前記半導体薄膜層と第１の半導体層
をはさんで成り且つ前記半導体薄膜層よりも大きい禁制
帯幅を持つ第２、第３の半導体層と、前記第２、第３の
半導体層の一主面にそれぞれ接して成る第１導電型の第
４の半導体層と第２導電型の第５の半導体層を有してな
る半導体レーザ素子。(1) A semiconductor thin film layer divided into thin lines or boxes, and a first semiconductor with high resistance and a larger forbidden band width than the semiconductor thin film layer, which is made up of a semiconductor thin film layer that compensates for the divided parts of the semiconductor thin film layer. a layer, second and third semiconductor layers sandwiching the semiconductor thin film layer and the first semiconductor layer and having a larger forbidden band width than the semiconductor thin film layer, and the second and third semiconductor layers. A semiconductor laser element comprising a fourth semiconductor layer of a first conductivity type and a fifth semiconductor layer of a second conductivity type, each of which is in contact with one principal surface of the semiconductor laser element.
導体薄膜と、前記化合物半導体薄膜の分断された箇所を
補填して成り高抵抗で且つ前記半導体薄膜層より大きい
禁制帯幅を持ち少なくとも一つの部分から成る第１の半
導体層と、前記化合物半導体薄膜の各層間を補填して成
り前記化合物半導体薄膜よりも大きな禁制帯幅を持ち少
なくとも一つの部分から成る第２の半導体層と、前記半
導体薄膜層と第１、第２の半導体層から成る部分をはさ
んで成り且つ前記半導体薄膜層よりも大きい禁制帯幅を
持つ第３、第４の半導体層と、前記第３、第４の半導体
層の一主面にそれぞれ接して成る第１導電型の第５の半
導体層と第２導電型の第６の半導体層を有してなる半導
体レーザ素子。(2) Comprising a plurality of compound semiconductor thin films divided into thin lines or box shapes, and compensating for the divided parts of the compound semiconductor thin film, and having a high resistance and a forbidden band width larger than the semiconductor thin film layer, at least one a first semiconductor layer consisting of two parts, a second semiconductor layer comprising at least one part and having a larger forbidden band width than the compound semiconductor thin film, which fills the space between each layer of the compound semiconductor thin film; third and fourth semiconductor layers sandwiching a portion consisting of a thin film layer and the first and second semiconductor layers and having a forbidden band width larger than that of the semiconductor thin film layer; and the third and fourth semiconductor layers. A semiconductor laser element comprising a fifth semiconductor layer of a first conductivity type and a sixth semiconductor layer of a second conductivity type, each of which is in contact with one main surface of the layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30072287A JPH01143283A (en) | 1987-11-27 | 1987-11-27 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30072287A JPH01143283A (en) | 1987-11-27 | 1987-11-27 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01143283A true JPH01143283A (en) | 1989-06-05 |
Family
ID=17888315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30072287A Pending JPH01143283A (en) | 1987-11-27 | 1987-11-27 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01143283A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61168983A (en) * | 1985-01-22 | 1986-07-30 | Nec Corp | High output semiconductor laser |
| JPS62140485A (en) * | 1985-12-16 | 1987-06-24 | Hitachi Ltd | Semiconductor structure and manufacture thereof |
-
1987
- 1987-11-27 JP JP30072287A patent/JPH01143283A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61168983A (en) * | 1985-01-22 | 1986-07-30 | Nec Corp | High output semiconductor laser |
| JPS62140485A (en) * | 1985-12-16 | 1987-06-24 | Hitachi Ltd | Semiconductor structure and manufacture thereof |
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