JPH01133984A - Production of sintered body of hyperfine particle - Google Patents
Production of sintered body of hyperfine particleInfo
- Publication number
- JPH01133984A JPH01133984A JP62291188A JP29118887A JPH01133984A JP H01133984 A JPH01133984 A JP H01133984A JP 62291188 A JP62291188 A JP 62291188A JP 29118887 A JP29118887 A JP 29118887A JP H01133984 A JPH01133984 A JP H01133984A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- ultrafine
- sintering
- sintered body
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000005245 sintering Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000011882 ultra-fine particle Substances 0.000 claims description 46
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 28
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 230000006698 induction Effects 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 5
- 229930195733 hydrocarbon Natural products 0.000 abstract description 5
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 6
- 238000004663 powder metallurgy Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は超微粒焼結体の！！ｌ造方決方法するもので
ある。[Detailed Description of the Invention] <Industrial Application Field> This invention is an ultrafine sintered body! ! This is how you decide on how to make it.
〈従来の技術〉
従来、超微粒子の焼結体の製造方法としては、原料の超
微粒子粉末に適当な粘結材を加えて加圧成型した後、真
空またはガス中で焼結する粉末冶金法が知られている。<Prior art> Conventionally, the method for manufacturing ultrafine sintered bodies is a powder metallurgy method in which a suitable caking agent is added to the raw material ultrafine particle powder, pressure molded, and then sintered in vacuum or gas. It has been known.
また、最近ではガス中での蒸発法にて作成した超微粒子
をガスで搬送して基板上に堆積さゼ、圧粉体を作る方法
のガスデポジション法も提案され、この圧粉体を焼結す
ることで緻密な焼結体を得る試みも行なわれている。Recently, a gas deposition method has also been proposed, in which ultrafine particles created by evaporation in a gas are transported by gas and deposited on a substrate to create a green compact, and the green compact is sintered. Attempts have also been made to obtain a dense sintered body by sintering.
〈発明が解決しようとする問題点〉
しかしながら、上記した粉末冶金法は、鉄系合金、アル
ミ合金、硬質合金、高融点金属等の製造に適用して効果
を発揮しているが、超微粒子の焼結体を製造するに当っ
ては次のような問題点を有しているのである。<Problems to be solved by the invention> However, although the powder metallurgy method described above has been applied effectively to the production of iron alloys, aluminum alloys, hard alloys, high melting point metals, etc., it is difficult to produce ultrafine particles. There are the following problems in manufacturing the sintered body.
まず第一に、超微粒子は表面が活性であるため、容易に
酸化が進み着火しやすい。この着火を防ぐために表面を
酸化させた粉末を用いると、焼結中に還元することが必
要になり、発生した酸素を含むガスは焼結体中に残って
、ボアを形成しやすい。First of all, since the surface of ultrafine particles is active, they are easily oxidized and ignited. If a powder with an oxidized surface is used to prevent ignition, it will be necessary to reduce the powder during sintering, and the generated oxygen-containing gas will remain in the sintered body, easily forming bores.
また超微粒子は凝集性が強く、多成分系の合金を作ろう
とする場合、均一に分散することが困難である。Furthermore, ultrafine particles have strong agglomeration properties, making it difficult to uniformly disperse them when attempting to make a multi-component alloy.
このような点で粉末冶金法による超微粒子焼結体の製法
は、必ずしも成功していなかった。In this respect, methods for producing ultrafine particle sintered bodies using powder metallurgy have not always been successful.
さらにガスデポジション法は、Ｆ記の粉末冶金法におけ
る問題点を解決するものであり、超微粒子の高密度の圧
粉体を青ることができるが、しかしながら、この方法で
は緻密な焼結体を得ることは・できなかった。Furthermore, the gas deposition method solves the problems in the powder metallurgy method described in F, and can produce a compact powder with a high density of ultrafine particles. It was not possible to obtain.
しかして、超微粒子の吹出しノズルを加熱したり、圧粉
体を作製後加熱することで緻密化する方法も考えられた
が成功するに至っていない。Methods of densification by heating the ultrafine particle blowing nozzle or by heating the powder compact after production have been considered, but these have not been successful.
〈問題点を解決するための手段〉
本発明者らは上記した問題点を解決するべく検討した結
果、ガスデポジション法で得られる超微粒子堆積物を堆
８！Ｉすると同時に焼結することによって緻密な焼結体
を得るに至ったものである。<Means for Solving the Problems> As a result of the inventors' studies to solve the above-mentioned problems, we have developed an ultrafine particle deposit obtained by a gas deposition method. By sintering and sintering at the same time, a dense sintered body was obtained.
即ち、この発明は超微粒子の生成室と焼結室とを搬送管
で連結し、生成室と焼結室に圧力差をつけて得られた超
微粒子をガスで生成室から焼結室に搬送し、焼結室中に
置いた基板上に超微粒子をｊ１１積、焼結させる時に、
この基板の温度を超微粒子の融点の絶対温度の０．２倍
以上、０．９倍以下に保持することにより、緻密で空孔
がなく、また超微粒子の特徴を保った焼結体を得ること
に成功したものである。That is, the present invention connects an ultrafine particle generation chamber and a sintering chamber with a transfer pipe, creates a pressure difference between the generation chamber and the sintering chamber, and uses gas to convey the obtained ultrafine particles from the generation chamber to the sintering chamber. When ultrafine particles are piled up on a substrate placed in a sintering chamber and sintered,
By maintaining the temperature of this substrate at 0.2 times or more and 0.9 times or less of the absolute temperature of the melting point of the ultrafine particles, a sintered body that is dense, has no pores, and maintains the characteristics of the ultrafine particles can be obtained. It was extremely successful.
〈作用〉
焼結体の強度は構成粒子の粒径の平方根の逆数に比例づ
ることか知られている。従って、粒径を小さくすれば、
焼結体の強度は向上する。超微粒子は通常０．１μｍ
（１００ｍｍ ）以下の粒径を持つ粒子であり、これを
焼結すると極めて高い強度が冑られる。超微粒子はガス
中蒸発法によって得ることができる。使用するガスとし
ては水素、ヘリウム、アルゴン、窒素、炭化水素、酸素
などがあり、なかでも特に反応性ガスである窒素、炭化
水素、酸素などを用いることにより、窒化物、炭化物、
酸化物等の超微粒子を得ることができる。<Operation> It is known that the strength of a sintered body is proportional to the reciprocal of the square root of the particle size of the constituent particles. Therefore, if the particle size is reduced,
The strength of the sintered body is improved. Ultrafine particles are usually 0.1 μm
(100 mm) or less in diameter, and when sintered, extremely high strength is achieved. Ultrafine particles can be obtained by evaporation in gas. Gases used include hydrogen, helium, argon, nitrogen, hydrocarbons, and oxygen. Among these, by using nitrogen, hydrocarbons, and oxygen, which are particularly reactive gases, nitrides, carbides,
Ultrafine particles such as oxides can be obtained.
また、上記のガスを混合ガスとして用いることもでき、
例えば窒素と炭化水素を用りると、炭窒化物の超微粒子
が得られる。In addition, the above gases can also be used as a mixed gas,
For example, when nitrogen and hydrocarbon are used, ultrafine particles of carbonitride can be obtained.
また、これらのガスは超微粒子生成の媒体となるだけで
なく、得られた超微粒子を生成室から焼結室へと導くた
めの担体ともなるのである。Furthermore, these gases not only serve as a medium for producing ultrafine particles, but also serve as carriers for guiding the obtained ultrafine particles from the production chamber to the sintering chamber.
このようにガスで搬送することにより、大気中に取出さ
ずにすみ、着火の問題も起こらない。By conveying the gas in this manner, it is not necessary to take it out into the atmosphere, and there is no problem of ignition.
ガスで搬送された超微粒子は、その途中で均一に分散、
混合され、ノズルより焼結室中の基板上に堆積される。Ultrafine particles transported by gas are uniformly dispersed along the way.
The mixture is mixed and deposited by a nozzle onto the substrate in the sintering chamber.
この基板は堆積される超微粒子の融点（２種以上の場合
はその低い方）の絶対温度の０．２倍以上、０．９倍以
下の温度に加熱されており、堆積してきた超微粒子は直
ちに焼結し、緻密化する。This substrate is heated to a temperature of 0.2 times or more and 0.9 times or less of the absolute temperature of the melting point of the ultrafine particles to be deposited (the lower of the melting points in the case of two or more types), and the deposited ultrafine particles Sinter and densify immediately.
上記の基板の温度が超微粒子の融点の絶対温度の０．２
倍未満では、焼結体の緻密化が十分に進まず、このため
所望の強度が得られず、また０、９倍を超えると、粒成
長が著しくなり、超微粒子を用いる意味がなくなる。The temperature of the above substrate is 0.2 of the absolute temperature of the melting point of the ultrafine particles.
If it is less than 0.9 times, the sintered body will not be sufficiently densified and the desired strength will not be obtained, and if it exceeds 0.9 times, grain growth will become significant and there will be no point in using ultrafine particles.
一度堆積させたものを焼結する方法では、内部に空孔が
残留しやすくなり、強度が十分にでない場合があるが、
この発明の方法によれば堆積と焼結が同時に進行するた
め、空孔の全く存在しない焼結体が得られ、著しい強度
向上が達成される。In the method of sintering the material once deposited, pores tend to remain inside and the strength may not be sufficient.
According to the method of the present invention, since deposition and sintering proceed simultaneously, a sintered body completely free of pores can be obtained, and the strength can be significantly improved.
またノズルを加熱する方法は、流れる気流中の超微粒子
の加熱には十分でなく、基板の渇αが低いと、膜と基板
の密着性が十分でない。Further, the method of heating the nozzle is not sufficient to heat the ultrafine particles in the flowing air stream, and if the temperature α of the substrate is low, the adhesion between the film and the substrate is insufficient.
基板を加熱する方法としては、基板全体を加熱してもよ
いが、局所的に加熱すると、焼結完了した部分での粒成
長を抑えることができて好ましい。As a method of heating the substrate, the entire substrate may be heated, but local heating is preferable because grain growth can be suppressed in the portion where sintering has been completed.
そして、この局所加熱をするためにはレーザー加熱や赤
外線の集光による加熱を行なえばよい。In order to perform this local heating, laser heating or heating by condensing infrared rays may be performed.
なお、この発明の方法によってＳＬＣのほか、Ｔ−Ｃ、
Ｔｉ Ｎ 、 Ｚｒ０ｅなどの超微粒焼結体を得ること
ができる。また、この発明の方法を実施するに当たって
は、例えば図示するような装置を用いればよい。In addition, by the method of this invention, in addition to SLC, T-C,
Ultrafine sintered bodies of TiN, ZrOe, etc. can be obtained. Further, in carrying out the method of the present invention, for example, an apparatus as shown in the drawings may be used.
〈実施例〉 以下、この発明を実施例により詳細に説明する。<Example> Hereinafter, this invention will be explained in detail with reference to Examples.
実施例１
第１図に示す装置を用いて、次のようにしてＳＬＣの超
微粒焼結体を製造した。Example 1 Using the apparatus shown in FIG. 1, an ultrafine sintered body of SLC was produced in the following manner.
まず装置全体即ち、超微粒子生成室１と焼結室２を１
ｘ １０’Ｔｏｒｒまで真空に引いたのち、超微粒子生
成室１にガスボンベ８．８′よりメタンガスと水素ガス
を両者の流昂比１．Ｈ→／ Ｈ２＝ １／１０として導
入し、これを搬送管３を通して焼結室２へ排気すること
により、超微粒子生成室１を１２０■０「「、焼結室２
を１．ＯＴｏｒｒに保持した。First, the entire apparatus, that is, the ultrafine particle generation chamber 1 and the sintering chamber 2,
After evacuation to x 10' Torr, methane gas and hydrogen gas were introduced into the ultrafine particle generation chamber 1 from a gas cylinder 8.8' at a flow ratio of 1.8'. By introducing H→/H2=1/10 and exhausting it to the sintering chamber 2 through the conveying pipe 3, the ultrafine particle generation chamber 1 becomes 120■0'', the sintering chamber 2
1. It was held at OTorr.
このような状態で生成室１中のるつぼ５に入れた金属け
い素原料４を誘導加熱電源７と接続した誘導コイル６に
て高周波誘導加熱して溶解し、蒸発させると、蒸発した
けい素粒子はメタンガスと反応してＳｉＣとなり、ガス
中で成長し、ｓｏｎｍのＳしＣ超微粒子となった。In this state, the metal silicon raw material 4 placed in the crucible 5 in the production chamber 1 is melted and evaporated by high-frequency induction heating using the induction coil 6 connected to the induction heating power source 7, and the evaporated silicon particles reacted with methane gas to become SiC, which grew in the gas and became ultrafine S and C particles of sonm.
この超微粒ＳＬＣ粒子は生成室１と焼結室２の圧力差に
より搬送管３を通ってノズル１９より焼結室２中に載置
した基板９上に堆積、焼結１０された。Due to the pressure difference between the generation chamber 1 and the sintering chamber 2, the ultrafine SLC particles were deposited and sintered 10 on the substrate 9 placed in the sintering chamber 2 through the nozzle 19 through the conveying pipe 3.
基板９は基板加熱用電源１２に接続した基板加熱用ヒー
ター１１により５７３″Ｋに加熱され、さらに焼結促進
のため基板９上に堆積した超微粒子にはレーザー電源１
４に接続したレーザー発振４１１３のレーザービーム１
５によって炭酸ガスレーザー（出力１６０Ｗ、ビーム径
８φ）を照射した。The substrate 9 is heated to 573''K by a substrate heating heater 11 connected to a substrate heating power source 12, and a laser power source 1 is applied to the ultrafine particles deposited on the substrate 9 to promote sintering.
Laser beam 1 of laser oscillation 4113 connected to 4
A carbon dioxide gas laser (output 160 W, beam diameter 8 φ) was irradiated using the following method.
なお、基板はｘ、ｙ、ｚ軸方向に走査し、焼結体寸法を
５ ｒｘｔｒ Ｘ １０ｎｔｎ Ｘ ３０ｍｊＩに調整
した。Note that the substrate was scanned in the x, y, and z axes directions, and the dimensions of the sintered body were adjusted to 5 rxtr x 10 ntn x 30 mjI.
得られた焼結体を４ｍｊｌＸ８闇Ｘ３０ｉａのＪＩＳ抗
折試験片に加工し、抗折試験を行なうと同時にビッカー
ス硬さ試験を行なった。The obtained sintered body was processed into a JIS bending test piece of 4 mjl x 8 dark x 30 ia, and a bending test and a Vickers hardness test were conducted at the same time.
なお、比較量として通常の粉末冶金法によりホットプレ
スで得たＳＬＣ焼結体についても同様の試験を行なった
。その結果は、第１表に示す通りであった。As a comparison, a similar test was also conducted on an SLC sintered body obtained by hot pressing using a normal powder metallurgy method. The results were as shown in Table 1.
第 １ 表
実施例２
第２図に示す装置を用いてＴＬ Ｎ −Ｃｏの複合超微
粒焼結体を製造した。Table 1 Example 2 A composite ultrafine sintered body of TL N -Co was produced using the apparatus shown in FIG.
まず装置全体即ち、超微粒子生成室１および１′と焼結
室２を１ ｘ １０’Ｔｏｒｒまで真空に引いたのち、
超微粒子生成室１にガスボンベ８よりヘリウムガスを導
入し、超微粒子生成室１′にはガスボンベ８′より窒素
ガスを導入し、これらを搬送管３を通して焼結室２へ排
気することにより、超微粒子生成室１を１２０ Ｔｏｒ
ｒ、超微粒子生成室１′を１１０Ｔｏｒｒ、焼結室２を
１．０ Ｔｏｒｒに保持した。このような状態で生成室
１中のるつぼ５に入れた金属Ｃｏ原′）Ｐ＃４を誘導加
熱電源７と接続した誘導コイル６にて高周波誘導加熱し
て溶解し、蒸発させると、蒸発した００粒子はガス中で
成長し、２０ｎｍのＳＬＣ超微粒子となった。First, the entire apparatus, that is, the ultrafine particle generation chambers 1 and 1' and the sintering chamber 2, was evacuated to 1 x 10' Torr, and then
Helium gas is introduced into the ultrafine particle generation chamber 1 from the gas cylinder 8, nitrogen gas is introduced into the ultrafine particle generation chamber 1' from the gas cylinder 8', and these are exhausted to the sintering chamber 2 through the conveyor pipe 3. Particle generation chamber 1 at 120 Torr
r, the ultrafine particle generation chamber 1' was maintained at 110 Torr, and the sintering chamber 2 was maintained at 1.0 Torr. In this state, the metal Co source P#4 placed in the crucible 5 in the generation chamber 1 is melted and evaporated by high-frequency induction heating using the induction coil 6 connected to the induction heating power source 7. The 00 particles were grown in a gas to become 20 nm SLC ultrafine particles.
また、生成室１′中のるつぼ５′に入れた金属Ｔ、原料
４′を直流アーク電源７′と接続したアーク電極６′と
の間でアーク溶解し、導入ガスの窒素と反応させ、４０
ｎｍのＴＬ Ｎ超微粒子を得た。Further, the metal T and raw material 4' placed in the crucible 5' in the generation chamber 1' are arc melted between the arc electrode 6' connected to the DC arc power source 7', and reacted with the introduced gas nitrogen.
TLN ultrafine particles of nm size were obtained.
この超微粒ＣｏおよびＴＬ Ｎ粒子は生成室１および１
′と焼結室２の圧力差により搬送管３および３′を通っ
てノズル１９より焼結室２中に載置した基板９上に堆積
、焼結１０された。These ultrafine Co and TL N particles are produced in the generation chambers 1 and 1.
Due to the pressure difference between ' and the sintering chamber 2, the particles were deposited and sintered 10 on the substrate 9 placed in the sintering chamber 2 through the nozzle 19 through the conveying pipes 3 and 3'.
なお、両用微粒子は搬送管で運ばれる間に均一に分散混
合された。Note that the dual-use fine particles were uniformly dispersed and mixed while being conveyed by the conveying tube.
基板９は基板加熱用電源１２に接続した基板加熱用ヒー
ター１１により８００″Ｋに加熱され、さらに焼結促進
のため基板９上に堆積した超微粒子にはレーザー電源１
４に接続したレーザー発振機１３のレーザービーム１５
によって炭酸ガスレーザー（出力１５０Ｗ、ビーム径８
φ）を照射した。The substrate 9 is heated to 800''K by a substrate heating heater 11 connected to a substrate heating power source 12, and a laser power source 1 is applied to the ultrafine particles deposited on the substrate 9 to promote sintering.
Laser beam 15 of laser oscillator 13 connected to 4
carbon dioxide laser (output 150W, beam diameter 8
φ) was irradiated.
なお、基板はＸ、Ｙ、Ｚ軸方向に走査し、焼結体寸法を
５ ｍａｒ Ｘ １３ｍｍ Ｘ １３闇に調整した。The substrate was scanned in the X, Y, and Z axis directions, and the dimensions of the sintered body were adjusted to 5 mm x 13 mm x 13 mm.
得られた焼結体をＩ Ｓ ＯＳ Ｎ Ｇ Ｎ １２０
４０８の形状の切削チップに加工し、以下の切削試験を
行なった。The obtained sintered body was
A cutting chip having a shape of 408 was processed, and the following cutting test was conducted.
なお、比較量として通常の粉末冶金法により作成したＴ
Ｌ Ｎ −Ｃｏ焼結体についても同様の試験を行なった
。In addition, as a comparison amount, T made by ordinary powder metallurgy method
A similar test was also conducted on the LN-Co sintered body.
切削条件 被削材： Ｓ ０Ｍ４３５ （Ｈ８＝２
８０ ）カッター： Ｄ Ｎ Ｆ ４１６０Ｒ
チップ： Ｓ Ｎ Ｇ Ｎ １２０４０８切削速度：
１５０ ｍ／ｍｉｎ
送 リ：０．１２ＩＭ／刃
切込み：２Ｍ
時 間：２０分
この結果、本発明品のチップはＶ、ｗ粍が０．１７ｍ５
で継続して使用可能であったのに体し、比較量のチップ
は殉摩耗が０．３１ｍ５で、しかもチッピングが多数発
生し、これ以上の切削は不可能であった。Cutting conditions Work material: S 0M435 (H8=2
80) Cutter: D N F 4160R Tip: S N G N 120408 Cutting speed:
150 m/min Feed rate: 0.12 IM/blade depth of cut: 2 M Time: 20 minutes As a result, the tip of the present invention has a V and W diameter of 0.17 m5.
Although it was possible to continue using the tip, the comparative tip had a loss of wear of 0.31 m5, and many chippings occurred, making further cutting impossible.
〈弁明の効果〉
以上説明したように、この発明によれば緻密な超微粒子
の焼結体を得ることが可能となったのである。<Effect of Explanation> As explained above, according to the present invention, it has become possible to obtain a sintered body of dense ultrafine particles.
従って、ファインはラミックス等の分野で機械的強度を
要求される部品、耐熱性、耐摩耗性を要求される部品な
どに利用すると効果的である。Therefore, fine is effective when used in parts that require mechanical strength, heat resistance, and abrasion resistance in the field of lamics and the like.
また、切削工具、耐摩工具、塑性加工用工具などの硬質
合金の分野に使用しても非常に有効である。さらにプリ
ント基板の配線など電子材料分野に応用することも可能
である。It is also very effective when used in the field of hard alloys such as cutting tools, wear-resistant tools, and plastic working tools. Furthermore, it is also possible to apply it to the field of electronic materials such as wiring for printed circuit boards.
第１図および第２図はこの発明の製造法を実施するに使
用する装置の一例を示す概略図である。
１．１′・・・超微粒子生成室 ２・・・焼結室３．
３′・・・搬送管 ４．４′・・・原料５．
５′・・・るつぼ ６・・・誘導コイル６′
・・・アーク電極 ７・・・誘導加熱電源７′・
・・直流アーク電源 ８．８′・・・ガスボンベ９・
・・基板 １０・・・超微粒子焼結体。
１１・・・基板加熱ヒーター １２・・・基板加熱用
電源１３・・・レー（アー発振橢 １４・・・レー
ザー電源１５・・・レーザービーム １６・・・レ
ーザー用窓材１７・・・基板駆動モーター １８・・
・モーター用電源１９・・・ノズルFIGS. 1 and 2 are schematic diagrams showing an example of an apparatus used to carry out the manufacturing method of the present invention. 1.1'... Ultrafine particle generation chamber 2... Sintering chamber 3.
3'...Transport pipe 4.4'...Raw material5.
5'... Crucible 6... Induction coil 6'
...Arc electrode 7...Induction heating power supply 7'
...DC arc power supply 8.8'...Gas cylinder 9.
...Substrate 10...Ultrafine particle sintered body. DESCRIPTION OF SYMBOLS 11... Substrate heating heater 12... Power source for substrate heating 13... Ray (ear oscillation) 14... Laser power source 15... Laser beam 16... Laser window material 17... Substrate drive Motor 18...
・Motor power supply 19...nozzle
Claims (3)
該生成室と焼結室に圧力差をつけて得られた超微粒子を
ガスで生成室から焼結室に搬送し、焼結室中に置かれた
基板上に該超微粒子を堆積、焼結させる超微粒焼結体の
製造方法において、前記基板の温度をその上に堆積、焼
結させる超微粒子の融点の絶対温度の０．２倍以上、０
．９倍以下に保持することを特徴とする超微粒焼結体の
製造方法。(1) Connecting the ultrafine particle generation chamber and sintering chamber with a conveyance pipe,
The ultrafine particles obtained by applying a pressure difference between the generation chamber and the sintering chamber are transported by gas from the generation chamber to the sintering chamber, and the ultrafine particles are deposited and sintered on a substrate placed in the sintering chamber. In the method for producing an ultrafine sintered body, the temperature of the substrate is set to 0.2 times or more the absolute temperature of the melting point of the ultrafine particles to be deposited and sintered thereon.
．． A method for producing an ultrafine sintered body, characterized in that the particle size is maintained at 9 times or less.
超微粒子の最も低い融点の絶対温度の０．２倍以上、０
．９倍以下に保持することを特徴とする特許請求の範囲
第１項記載の超微粒焼結体の製造方法。(2) Two or more types of ultrafine particles are used, and the substrate temperature is 0.2 times or more the absolute temperature of the lowest melting point of those ultrafine particles.
．． 2. The method for producing an ultrafine sintered body according to claim 1, wherein the ultrafine sintered body is maintained at 9 times or less.
徴とする特許請求の範囲第１項または第２項記載の超微
粒焼結体の製造方法。(3) A method for producing an ultrafine sintered body according to claim 1 or 2, characterized in that the substrate is locally heated with a laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62291188A JPH01133984A (en) | 1987-11-18 | 1987-11-18 | Production of sintered body of hyperfine particle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62291188A JPH01133984A (en) | 1987-11-18 | 1987-11-18 | Production of sintered body of hyperfine particle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01133984A true JPH01133984A (en) | 1989-05-26 |
Family
ID=17765598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62291188A Pending JPH01133984A (en) | 1987-11-18 | 1987-11-18 | Production of sintered body of hyperfine particle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133984A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0703036A3 (en) * | 1990-11-09 | 1996-04-10 | Dtm Corp | |
| JP2002052233A (en) * | 2000-08-11 | 2002-02-19 | Sankyo Kk | Cleaning device for grain material for polishing game medium |
-
1987
- 1987-11-18 JP JP62291188A patent/JPH01133984A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0703036A3 (en) * | 1990-11-09 | 1996-04-10 | Dtm Corp | |
| JP2002052233A (en) * | 2000-08-11 | 2002-02-19 | Sankyo Kk | Cleaning device for grain material for polishing game medium |
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