JPH01133213A - Yoke type thin film magnetic head - Google Patents
Yoke type thin film magnetic headInfo
- Publication number
- JPH01133213A JPH01133213A JP29118287A JP29118287A JPH01133213A JP H01133213 A JPH01133213 A JP H01133213A JP 29118287 A JP29118287 A JP 29118287A JP 29118287 A JP29118287 A JP 29118287A JP H01133213 A JPH01133213 A JP H01133213A
- Authority
- JP
- Japan
- Prior art keywords
- magnetization
- yoke
- axis
- magnetic field
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 70
- 239000010409 thin film Substances 0.000 title claims description 10
- 230000005415 magnetization Effects 0.000 claims abstract description 60
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 230000008859 change Effects 0.000 claims description 8
- 230000004907 flux Effects 0.000 claims description 7
- 230000005330 Barkhausen effect Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 9
- 230000005294 ferromagnetic effect Effects 0.000 description 9
- 230000005381 magnetic domain Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、強磁性薄膜の磁気抵抗効果を応用した磁気抵
抗効果素子（以下ＭＲ素子と称する）によって磁気記録
媒体に記録された信号の検出を行うヨーク型薄膜磁気ヘ
ッド（以下ＹＭＲヘッドと称する）に関するものである
。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the detection of signals recorded on a magnetic recording medium by a magnetoresistive element (hereinafter referred to as an MR element) that applies the magnetoresistive effect of a ferromagnetic thin film. This invention relates to a yoke-type thin film magnetic head (hereinafter referred to as a YMR head) that performs the following.
従来のＹＭＲヘッドは、第２図に示すように、下側ヨー
ク７と上側ヨークｌとの間にヘッドギャップｌＯを有し
ており、上側ヨークト５は、ヘッドギャップ１０からＭ
Ｒ素子２へ信号磁束を導くための磁束導入路を構成して
いる。上記の上側ヨークト５間の下方には、第３図およ
び第４図にも示すように、磁気記録媒体９に発生した信
号磁界を抵抗変化として検出するＭＲ素子２が設けられ
、このＭＲ素子２における上側ヨークト５の延設方向と
直交する長手方向Ａの両端部は、強磁性膜３・３を介し
て、リー・ド導体部４・４と接続されている。上記ＭＲ
素子２の下方には、ＭＲ素子２の幅方向Ｂに所望のバイ
アス磁界を印加する導体６が設けられている。また、上
記ヘッドギャップ１０に近接する部位には、磁気記録媒
体９が位置しており、この磁気記録媒体９とヘッドギャ
ップ１０との間にはスペーシング８が形成されている。The conventional YMR head has a head gap lO between the lower yoke 7 and the upper yoke l, as shown in FIG.
It constitutes a magnetic flux introducing path for guiding signal magnetic flux to the R element 2. As shown in FIGS. 3 and 4, an MR element 2 is provided below the upper yoke 5 to detect a signal magnetic field generated in the magnetic recording medium 9 as a resistance change. Both ends of the upper yoke 5 in the longitudinal direction A perpendicular to the extending direction are connected to the lead conductor parts 4 through the ferromagnetic films 3. The above MR
A conductor 6 is provided below the element 2 to apply a desired bias magnetic field in the width direction B of the MR element 2. Further, a magnetic recording medium 9 is located near the head gap 10, and a spacing 8 is formed between the magnetic recording medium 9 and the head gap 10.
上記の如く構成されたＹＭＲヘッドにおいて、ＭＲ素子
２における磁化容易軸の方向は、ＭＲ素子２を作製する
際に、ＭＲ素子２の長手方向Ａに設定される。そして、
上記磁気記録媒体９より発生する信号磁界の検出は、Ｍ
Ｒ素子２の長手方向Ａにセンス電流を流し、ＭＲ素子２
の両端に発生する電圧の変化を取り出すことにより行っ
ている。また、導体６に電流を流すことによって、所望
のバイアス磁界を発生させ、これをＭＲ素子２に印加し
、ＭＲ素子２の動作点を線型性の良い点に移動させてい
る。さらに、上記強磁性膜３・３とＭＲ素子２とを強磁
***換結合させてＭＲ素子２の長手方向Ａに弱磁界を印
加している。そして、この弱磁界によってＭＲ素子２を
単磁区状態とし、ＭＲ素子２内部の磁化が不連続に変化
するのを防止して、バルクハウゼンノイズの発生を抑制
している。In the YMR head configured as described above, the direction of the axis of easy magnetization in the MR element 2 is set to the longitudinal direction A of the MR element 2 when the MR element 2 is manufactured. and,
Detection of the signal magnetic field generated by the magnetic recording medium 9 is carried out by M
A sense current is passed in the longitudinal direction A of the R element 2, and the MR element 2
This is done by extracting the change in voltage that occurs across the . Further, by passing a current through the conductor 6, a desired bias magnetic field is generated and applied to the MR element 2, thereby moving the operating point of the MR element 2 to a point with good linearity. Further, the ferromagnetic films 3 and the MR element 2 are ferromagnetically exchange coupled, and a weak magnetic field is applied in the longitudinal direction A of the MR element 2. This weak magnetic field brings the MR element 2 into a single magnetic domain state, prevents the magnetization inside the MR element 2 from discontinuously changing, and suppresses Barkhausen noise.
しかしながら、一般に、ＭＲ素子２の磁化容易軸の向き
は、ＭＲ素子２の全ての領域において同一方向に揃って
いない。これは、一つにはＭＲ素子２に用いる強磁性膜
の成膜時に、磁化容易軸の角度分散を生じてしまうため
であり、さらには、その後の加工プロセス中における熱
および応力による逆磁歪効果等のために、ＭＲ素子２の
成膜時に比べて角度分散が増加する傾向にあることによ
る。このため、ＭＲ素子２を単磁区化し、磁壁移動にっ
て発生するバルクハウゼンノイズを抑制しようとしても
、磁化のスイッチングによるバルクハウゼンノイズを誘
発するものであった。However, in general, the directions of the easy magnetization axes of the MR element 2 are not aligned in the same direction in all regions of the MR element 2. This is partly because angular dispersion of the axis of easy magnetization occurs during the formation of the ferromagnetic film used in the MR element 2, and also because of the reverse magnetostrictive effect due to heat and stress during the subsequent processing process. This is because the angular dispersion tends to increase compared to when the MR element 2 is formed. For this reason, even if the MR element 2 is made into a single magnetic domain to suppress Barkhausen noise generated by domain wall movement, Barkhausen noise due to magnetization switching is induced.
そこで、上記のバルクハウゼンノイズを抑制するものと
して、ＭＲ素子２の磁化容易軸をＭＲ素子２の長手方向
Ａに対して所定角度傾斜させて設けるという構成が考え
られる。この構成は、強磁性膜３・３にて印加された弱
磁界下のＭＲ素子２において、磁化容易軸の角度分散の
ために、磁化のスイッチングによって動作範囲の磁界領
域に発生していたバルクハウゼンノイズを、動作範囲外
の磁界領域にのみ発生するように制限するものである。Therefore, in order to suppress the above-mentioned Barkhausen noise, a configuration in which the axis of easy magnetization of the MR element 2 is inclined at a predetermined angle with respect to the longitudinal direction A of the MR element 2 can be considered. In this configuration, in the MR element 2 under a weak magnetic field applied by the ferromagnetic films 3, Barkhausen was generated in the magnetic field region of the operating range due to switching of magnetization due to angular dispersion of the axis of easy magnetization. It limits noise to only occur in magnetic field regions outside the operating range.
ところが、上記の構成では、上側ヨークト５の磁化容易
軸がＭＲ素子２の磁化容易軸の向きと一致していない場
合、ＭＲ素子２における上側ヨークト５との重なり部分
の磁化方向は、上側ヨークト５の磁化容易軸の方向に向
いてしまうことになる。即ち、例えば第４図に示すよう
に、ＭＲ素子２の磁化容易軸が長手方向Ａに対して反時
計回り方向にθ１＝２０°傾けられているのに対し、上
側ヨークト５の磁化容易軸が上記長手方向Ａに対して時
計回り方向にθｇ＝１０”傾いた方向を向いている場合
には、ＭＲ素子２における上側ヨークト５との重なり部
分およびその近傍は、ＭＲ素子２の磁化容易軸とは反対
方向、即ち時計回り方向に傾くことになる。従って、Ｍ
Ｒ素子２の磁化容易軸を予め傾けて設けている効果を発
揮することができず、十分にバルクハウゼンノイズを抑
制することができないという問題点を有している。However, in the above configuration, if the easy axis of magnetization of the upper yoke 5 does not match the direction of the easy axis of magnetization of the MR element 2, the magnetization direction of the overlapping portion of the MR element 2 with the upper yoke 5 is different from that of the upper yoke 5. It ends up pointing in the direction of the axis of easy magnetization. That is, as shown in FIG. 4, for example, the axis of easy magnetization of the MR element 2 is tilted counterclockwise by θ1=20° with respect to the longitudinal direction A, whereas the axis of easy magnetization of the upper yoke 5 is tilted at θ1=20°. When the MR element 2 is oriented in a direction tilted clockwise by θg=10'' with respect to the longitudinal direction A, the overlapping portion of the MR element 2 with the upper yoke 5 and its vicinity are the easy axis of magnetization of the MR element 2. will be tilted in the opposite direction, i.e. in the clockwise direction.Therefore, M
This has the problem that the effect of tilting the axis of easy magnetization of the R element 2 in advance cannot be achieved, and Barkhausen noise cannot be sufficiently suppressed.
本発明のヨーク型薄膜磁気ヘッドは、上記の問題点を解
決するために、磁気記録媒体にて発生される信号磁界を
抵抗変化として検出する磁気抵抗効果素子と、ヘッドギ
ャップから上記磁気抵抗効果素子へ磁束を導くヨークと
、磁気抵抗効果素子の長手方向に弱磁界を印加する直流
磁界印加手段と、磁気抵抗効果素子の幅方向にバイアス
磁界を印加する導体とを備え、上記磁気抵抗効果素子の
磁化容易軸が磁気抵抗効果素子の長手方向に対して傾斜
状に設定されているヨーク型薄膜磁気ヘッドにおいて、
上記ヨークの磁化容易軸が磁気抵抗効果素子の磁化容易
軸とほぼ同一方向に傾斜されている構成である。In order to solve the above-mentioned problems, the yoke-type thin film magnetic head of the present invention includes a magnetoresistive element that detects a signal magnetic field generated in a magnetic recording medium as a resistance change, and a magnetoresistive element that detects a signal magnetic field generated in a magnetic recording medium as a resistance change, and A yoke for guiding magnetic flux to the magnetoresistive element, a direct current magnetic field applying means for applying a weak magnetic field in the longitudinal direction of the magnetoresistive element, and a conductor for applying a bias magnetic field in the width direction of the magnetoresistive element, In a yoke-type thin film magnetic head in which the axis of easy magnetization is set obliquely with respect to the longitudinal direction of the magnetoresistive element,
The easy magnetization axis of the yoke is inclined in substantially the same direction as the easy magnetization axis of the magnetoresistive element.
上記の構成により、磁気記録媒体にて発生される信号磁
界の磁束はヨークによってヘッドギャップから磁気抵抗
効果素子へ導かれる。また、直流磁界印加手段に・よっ
て磁気抵抗効果素子の長手力向に弱磁界が印加されると
供に、導体によって磁気抵抗効果素子の幅方向にバイア
ス磁界が印加される。これにより、直流磁界印加手段で
は磁気記録媒体にて発生される信号磁界を抵抗変化とし
て検出する。そして、磁気抵抗効果素子の磁化容易軸が
磁気抵抗効果素子の長手方向に対して傾斜状に設定され
、かつヨークの磁化容易軸が磁気抵抗効果素子の磁化容
易軸とほぼ同一方向に傾斜されていることにより、磁気
抵抗効果素子の磁化方向はヨークの磁化容易軸方向の影
響を受は難く、磁気抵抗効果素子の磁化方向に大きな角
度分散を生じ難い。従って、磁化のスイッチングに起因
するバルクハウゼンノイズの発生が抑制される。With the above configuration, the magnetic flux of the signal magnetic field generated in the magnetic recording medium is guided from the head gap to the magnetoresistive element by the yoke. Further, a weak magnetic field is applied in the longitudinal direction of the magnetoresistive element by the DC magnetic field applying means, and a bias magnetic field is applied in the width direction of the magnetoresistive element by the conductor. Thereby, the DC magnetic field applying means detects the signal magnetic field generated in the magnetic recording medium as a resistance change. The easy axis of magnetization of the magnetoresistive element is set to be inclined with respect to the longitudinal direction of the magnetoresistive element, and the easy axis of magnetization of the yoke is inclined in substantially the same direction as the easy axis of magnetization of the magnetoresistive element. As a result, the magnetization direction of the magnetoresistive element is hardly affected by the easy axis direction of magnetization of the yoke, and a large angular dispersion is unlikely to occur in the magnetization direction of the magnetoresistive element. Therefore, the occurrence of Barkhausen noise caused by magnetization switching is suppressed.
本発明の一実施例を第１図乃至第４図に基づいて以下に
説明する。尚、本実施例士は、説明の便宜上、前記第２
図および第３図を再度使用しており、第１図に示した同
一部材には同一の符号を付記しである。An embodiment of the present invention will be described below based on FIGS. 1 to 4. In addition, for convenience of explanation, the present example examiner explained the second
The figures and FIG. 3 are used again, and the same members shown in FIG. 1 are given the same reference numerals.
本発明に係るヨーク型薄膜磁気ヘッドは、第２図および
第３図に示すように、高透磁率磁性体からなる下側ヨー
ク７を有している。上記の高透磁率磁性体としては、一
般に、多結晶Ｎｉ−Ｚｎフェライト基板や、単結晶或い
は多結晶Ｍ ｎ −Ｚ ｎフェライト基板が用いられる
。下側ヨーク７の上には、下側ヨーク７の前端面７ａ側
から後方に上側ヨーク１が延設され、この上側ヨーク１
の後方には、上側ヨークｌと所定の間隙をおいて上側ヨ
ーク５が延設されている。上側ヨーク１は前部側が下側
ヨーク７と接続され、後部側は斜め上方に折曲されて下
側ヨーク７と離間している。また、上側ヨーク５は後部
側が下側ヨーク７と接続され、前部側は斜め上方に折曲
されて下側ヨーク７と離間し、上側ヨーク１と対向して
いる。これら上側ヨークト５は、通常０．５〜１．０μ
ｍ程度の膜厚のパーマロイにて作成されており、後述の
磁気記録媒体９にて発生した信号磁界をＭＲ素子２に導
くための磁束導入路を構成している。As shown in FIGS. 2 and 3, the yoke-type thin film magnetic head according to the present invention has a lower yoke 7 made of a high magnetic permeability magnetic material. Generally, a polycrystalline Ni--Zn ferrite substrate or a single-crystalline or polycrystalline Mn-Zn ferrite substrate is used as the above-mentioned high permeability magnetic material. An upper yoke 1 is provided above the lower yoke 7 and extends rearward from the front end surface 7a side of the lower yoke 7.
An upper yoke 5 extends behind the upper yoke 1 with a predetermined gap therebetween. The front side of the upper yoke 1 is connected to the lower yoke 7, and the rear side is bent obliquely upward and separated from the lower yoke 7. Further, the upper yoke 5 is connected to the lower yoke 7 at the rear side, and is bent diagonally upward at the front side to be separated from the lower yoke 7 and faces the upper yoke 1. These upper yokes 5 are usually 0.5 to 1.0μ
It is made of permalloy with a film thickness of about m, and constitutes a magnetic flux introducing path for guiding a signal magnetic field generated in a magnetic recording medium 9, which will be described later, to the MR element 2.
上記の上側ヨークト５間の下方には、磁気記録媒体９に
て発生した信号磁界を抵抗変化として検出するＭＲ素子
、２が設けられている。このＭＲ素子２における長手方
向Ａの両端部は、強磁性膜３・３を介して、上側ヨーク
５の両側に設けられたリード導体部４・４の前端部と接
続されている。そして、上記ＭＲ素子２および上側ヨー
クト５における磁化容易軸の方向は、本実施例において
は第１図に示すように、ＭＲ素子２の長手方向Ａに対し
て反時計回り方向にθ１＝θ２＝２０゜だけ傾けられて
いる。An MR element 2 is provided below the upper yoke 5 to detect a signal magnetic field generated in the magnetic recording medium 9 as a resistance change. Both ends of the MR element 2 in the longitudinal direction A are connected to the front ends of lead conductor sections 4 provided on both sides of the upper yoke 5 via ferromagnetic films 3. In this embodiment, the direction of the easy axis of magnetization in the MR element 2 and the upper yoke 5 is θ1=θ2=counterclockwise with respect to the longitudinal direction A of the MR element 2, as shown in FIG. It is tilted by 20 degrees.
上記の強磁性膜３・３は、ＭＲ素子２を単磁区化するた
めにＭＲ素子２の長手方向Ａに所望の弱磁界を印加する
直流磁界印加手段を成している。The above-mentioned ferromagnetic films 3 constitute a direct current magnetic field applying means for applying a desired weak magnetic field in the longitudinal direction A of the MR element 2 in order to make the MR element 2 into a single magnetic domain.
そして、強磁性膜３・３は、良好な導電性を有する保持
力の大なる膜であって、Ｃｏ Ｐ ％ Ｎ １−Ｃ０
％ Ｎ１−Ｇｏ−Ｐ等にて作製されており、その膜厚は
、１０００〜２０００人である。リード導体部４・４は
Ａｌ−Ｃｕ膜にて作製されており、その膜厚は１０００
〜２０００人である。さらに、上記ＭＲ素子２の下方に
は、ＡＩ！−Ｃｕから成り、ＭＲ素子２の幅方向に所望
のバイアス磁界を印加する導体６が配設されている。The ferromagnetic films 3 are films with good conductivity and large coercive force, and are made of Co P % N 1-C0
%N1-Go-P, etc., and its film thickness is 1000 to 2000. The lead conductor parts 4, 4 are made of an Al-Cu film, and the film thickness is 1000 mm.
~2000 people. Furthermore, below the MR element 2, AI! A conductor 6 made of -Cu and applying a desired bias magnetic field in the width direction of the MR element 2 is disposed.
また、下側ヨーク７と上側ヨーク１との間にはへラドギ
ャップ１０が形成されている。このヘッドギャップ１０
は、実際に使用される記録波長が最小０．５μｍ程度で
あるから、０．２〜０．３μｍ程度に設定されている。Furthermore, a spade gap 10 is formed between the lower yoke 7 and the upper yoke 1. This head gap 10
is set to about 0.2 to 0.3 μm since the recording wavelength actually used is at least about 0.5 μm.
そして、上記ヘッドギャップ１０に近接する部位には、
第３図に示すように、磁気記録媒体９が位置しており、
この磁気記録媒体９とヘッドギャップ１０との間にはス
ペーシング８が形成されている。And, in the region close to the head gap 10,
As shown in FIG. 3, a magnetic recording medium 9 is located,
A spacing 8 is formed between the magnetic recording medium 9 and the head gap 10.
上記の構成において、本ＹＭＲヘッドでは、上側ヨーク
ト５とＭＲ素子２との磁化容易軸が同一方向に設定され
ていることにより、ＭＲ素子２の磁化方向が、上側ヨー
クト５の磁化容易軸方向の影響を受けて、大きな角度分
散を生じることがない。従って、ＭＲ素子２の全領域に
おいて、磁化容易軸を傾けて設定している構成に基づく
本来の機能により、磁化のスイッチングに起因するバル
クハウゼンノイズを抑制することができる。In the above configuration, in this YMR head, the easy magnetization axes of the upper yoke 5 and the MR element 2 are set in the same direction, so that the magnetization direction of the MR element 2 is the same as the easy magnetization axis direction of the upper yoke 5. This will not cause large angular dispersion. Therefore, in the entire region of the MR element 2, Barkhausen noise caused by magnetization switching can be suppressed by the original function based on the configuration in which the axis of easy magnetization is tilted.
また、上側ヨークト５の磁化容易軸は、ＭＲ素子２の磁
化容易軸とほぼ同一であればよく、全く同一である必要
はない。即ち、第１図に示したように、ＭＲ素子２にお
ける磁化容易軸の方向が、ＭＲ素子２の長手方向Ａに対
して反時計回り方向にθ、＝２０°であり、ＭＲ素子２
の角度分散がほぼ２０°程度であったとすると、上側ヨ
ークト５における磁化容易軸の上記長手方向Ａに対する
傾き角θ２は、反時計回り方向に５°程度で十分である
。その理由は、ＭＲ素子２の角度分散を考慮しても、長
手方向Ａに対して時計回り方向に磁化容易軸が傾くこと
は、はとんどないか、あったとしてもその傾きはきわめ
て小さいものである。従って、上側ヨークト５との相互
作用によってＭＲ素子２の磁化方向を時計回り方向に傾
けないためには、上側ヨークト５の傾き角θ２が上述し
たように５°程度あればよいからである。Further, the easy magnetization axis of the upper yoke 5 only needs to be approximately the same as the easy magnetization axis of the MR element 2, and does not need to be completely the same. That is, as shown in FIG. 1, the direction of the axis of easy magnetization in the MR element 2 is θ=20° counterclockwise with respect to the longitudinal direction A of the MR element 2, and
Assuming that the angular dispersion of is approximately 20°, the inclination angle θ2 of the axis of easy magnetization in the upper yoke 5 with respect to the longitudinal direction A is approximately 5° counterclockwise. The reason for this is that even if the angular dispersion of the MR element 2 is taken into account, the axis of easy magnetization is rarely tilted clockwise with respect to the longitudinal direction A, or even if it is, the tilt is extremely small. It is something. Therefore, in order to prevent the magnetization direction of the MR element 2 from being tilted clockwise due to interaction with the upper yoke 5, the inclination angle θ2 of the upper yoke 5 only needs to be about 5° as described above.
一方、上側ヨークト５の磁化容易軸をＭＲ素子２の長手
方向Ａに対し反時計回り方向に４５゜以上傾けると、上
側ヨークト５におけるＭＲ素子２の幅方向Ｂの透磁率が
下がり、再生出力の低下を招来することになる。従って
、ＭＲ素子２の長手方向Ａに対する上側ヨークト５の磁
化容易軸の傾斜角θ２は、５〜４５°程度が好ましい。On the other hand, if the axis of easy magnetization of the upper yoke 5 is tilted counterclockwise by 45° or more with respect to the longitudinal direction A of the MR element 2, the magnetic permeability of the upper yoke 5 in the width direction B of the MR element 2 decreases, and the reproduction output This will lead to a decline. Therefore, the inclination angle θ2 of the axis of easy magnetization of the upper yoke 5 with respect to the longitudinal direction A of the MR element 2 is preferably about 5 to 45 degrees.
また、ＭＲ素子２と上側ヨークト５との磁化容易軸の向
きが大きく不一致となる場合には、ＭＲ素子２の幅方向
ＢでのＭＲ素子２の磁化の向きに角度分散が生じるため
、ＭＲ素子２の非線型応答が大きくなり、再生出力波形
に歪みを生じ易いということにもなる。Furthermore, if the directions of the easy magnetization axes of the MR element 2 and the upper yoke 5 are largely mismatched, angular dispersion occurs in the direction of magnetization of the MR element 2 in the width direction B of the MR element 2. This also means that the nonlinear response of No. 2 becomes large, which tends to cause distortion in the reproduced output waveform.
以上のように、ＭＲ素子２と上側ヨークＩ・５との磁化
容易軸はほぼ同一方向を向いているのが好ましいが、バ
ルクハウゼンノイズを抑止するという点においては、必
ずしも一致している必要はない。また、ＹＭＲヘッドの
製造工程上、ＭＲ素子２と上側ヨークト５は同時に成膜
されないため、両者の磁化容易軸の向きを完全に一致さ
せるのは事実上不可能である。従って、実際上がらも、
両者の磁化容易軸の向きが±５°程度の範囲でほぼ一致
していれば、バルクハウゼンノイズの抑止と再生出力波
形の低歪化との点において、十分な機能を発揮すること
ができる。As mentioned above, it is preferable that the easy magnetization axes of the MR element 2 and the upper yoke I/5 point in almost the same direction, but they do not necessarily have to coincide in order to suppress Barkhausen noise. do not have. Furthermore, in the manufacturing process of the YMR head, the MR element 2 and the upper yoke 5 are not formed at the same time, so it is virtually impossible to make the directions of their easy magnetization axes completely coincident. Therefore, even if it actually goes up,
If the directions of the axes of easy magnetization of both are approximately the same within a range of about ±5°, sufficient functionality can be achieved in terms of suppressing Barkhausen noise and reducing distortion of the reproduced output waveform.
本発明のヨーク型薄膜磁気ヘッドは、以上のように、磁
気記録媒体にて発生される信号磁界を抵抗変化として検
出する磁気抵抗効果素子と、ヘッドギヤ・ノブから上記
磁気抵抗効果素子へ磁束を導（ヨークと、磁気抵抗効果
素子の長手方向に弱磁界を印加する直流磁界印加手段と
、磁気抵抗効果素子の幅方向にバイアス磁界を印加する
導体とを備え、上記磁気抵抗効果素子の磁化容易軸が磁
気抵抗効果素子の長手方向に対して傾斜状に設定されて
いるヨーク型薄膜磁気ヘッドにおいて、上記ヨークの磁
化容易軸が磁気抵抗効果素子の磁化容易軸とほぼ同一方
向に傾斜されている構成である。As described above, the yoke-type thin film magnetic head of the present invention includes a magnetoresistive element that detects a signal magnetic field generated in a magnetic recording medium as a resistance change, and a magnetoresistive element that guides magnetic flux from the headgear knob to the magnetoresistive element. (Equipped with a yoke, a DC magnetic field applying means for applying a weak magnetic field in the longitudinal direction of the magnetoresistive element, and a conductor for applying a bias magnetic field in the width direction of the magnetoresistive element, and an axis of easy magnetization of the magnetoresistive element. A yoke-type thin film magnetic head in which the yoke is inclined with respect to the longitudinal direction of the magnetoresistive element, and the easy axis of magnetization of the yoke is inclined in substantially the same direction as the easy axis of magnetization of the magnetoresistive element. It is.
それゆえ、磁気抵抗効果素子の磁化方向に大きな角度分
散を生じることがな（、磁気抵抗効果素子の全域におい
て、磁化のスイッチングに起因するバルクハウゼンノイ
ズを抑制することができる。これにより、良質の再生出
力信号を得ることができるという効果を奏する。Therefore, there is no large angular dispersion in the magnetization direction of the magnetoresistive element (and Barkhausen noise caused by magnetization switching can be suppressed over the entire area of the magnetoresistive element. This has the effect that a reproduced output signal can be obtained.
第１図は本発明の一実施例を示すものであって、磁気抵
抗効果素子および上側ヨークの磁化容易軸の傾きを２０
”に設定した場合における磁気抵抗効果素子における磁
化の向きを示す説明図、第２図は一般的なヨーク型薄膜
磁気ヘッドの斜視図、第３図は同平面図、第４図は従来
例を示すものであって、磁気抵抗効果素子における磁化
の向きを示す説明図である。
１・５は上側ヨーク、２は磁気抵抗効果素子、３は強磁
性膜（直流磁界印加手段）、６は導体、７は下側ヨーク
、９は磁気記録媒体、１ｏはヘッドギャップである。
第３図
第４図FIG. 1 shows an embodiment of the present invention, in which the inclination of the easy axis of magnetization of the magnetoresistive element and the upper yoke is set to 20.
2 is a perspective view of a typical yoke-type thin film magnetic head, FIG. 3 is a plan view of the same, and FIG. 4 is a conventional example. 1 is an explanatory diagram showing the direction of magnetization in a magnetoresistive element. 1 and 5 are upper yokes, 2 is a magnetoresistive element, 3 is a ferromagnetic film (DC magnetic field applying means), and 6 is a conductor. , 7 is the lower yoke, 9 is the magnetic recording medium, and 1o is the head gap.
Claims (1)
して検出する磁気抵抗効果素子と、ヘッドギャップから
上記磁気抵抗効果素子へ磁束を導くヨークと、磁気抵抗
効果素子の長手方向に弱磁界を印加する直流磁界印加手
段と、磁気抵抗効果素子の幅方向にバイアス磁界を印加
する導体とを備え、上記磁気抵抗効果素子の磁化容易軸
が磁気抵抗効果素子の長手方向に対して傾斜状に設定さ
れているヨーク型薄膜磁気ヘッドにおいて、上記ヨーク
の磁化容易軸が磁気抵抗効果素子の磁化容易軸とほぼ同
一方向に傾斜されていることを特徴とするヨーク型薄膜
磁気ヘッド。1. A magnetoresistive element that detects a signal magnetic field generated in a magnetic recording medium as a change in resistance, a yoke that guides magnetic flux from the head gap to the magnetoresistive element, and a weak magnetic field in the longitudinal direction of the magnetoresistive element. and a conductor for applying a bias magnetic field in the width direction of the magnetoresistive element, the axis of easy magnetization of the magnetoresistive element being set to be inclined with respect to the longitudinal direction of the magnetoresistive element. 1. A yoke-type thin-film magnetic head, characterized in that the axis of easy magnetization of the yoke is inclined in substantially the same direction as the axis of easy magnetization of the magnetoresistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29118287A JPH01133213A (en) | 1987-11-18 | 1987-11-18 | Yoke type thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29118287A JPH01133213A (en) | 1987-11-18 | 1987-11-18 | Yoke type thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01133213A true JPH01133213A (en) | 1989-05-25 |
Family
ID=17765523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29118287A Pending JPH01133213A (en) | 1987-11-18 | 1987-11-18 | Yoke type thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133213A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274907A (en) * | 1988-09-14 | 1989-11-02 | Matsushita Electric Works Ltd | Hammer drill |
| US5680281A (en) * | 1994-03-10 | 1997-10-21 | International Business Machines Corporation | Edge-biased magnetoresistive sensor |
| US5991125A (en) * | 1994-09-16 | 1999-11-23 | Kabushiki Kaisha Toshiba | Magnetic head |
| JPWO2009113504A1 (en) * | 2008-03-10 | 2011-07-21 | 積水メディカル株式会社 | Patch |
-
1987
- 1987-11-18 JP JP29118287A patent/JPH01133213A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274907A (en) * | 1988-09-14 | 1989-11-02 | Matsushita Electric Works Ltd | Hammer drill |
| JPH0431801B2 (en) * | 1988-09-14 | 1992-05-27 | ||
| US5680281A (en) * | 1994-03-10 | 1997-10-21 | International Business Machines Corporation | Edge-biased magnetoresistive sensor |
| US5991125A (en) * | 1994-09-16 | 1999-11-23 | Kabushiki Kaisha Toshiba | Magnetic head |
| US6157525A (en) * | 1994-09-16 | 2000-12-05 | Kabushiki Kaisha Toshiba | Magnetic head |
| JPWO2009113504A1 (en) * | 2008-03-10 | 2011-07-21 | 積水メディカル株式会社 | Patch |
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