JPH01128607A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH01128607A JPH01128607A JP28533787A JP28533787A JPH01128607A JP H01128607 A JPH01128607 A JP H01128607A JP 28533787 A JP28533787 A JP 28533787A JP 28533787 A JP28533787 A JP 28533787A JP H01128607 A JPH01128607 A JP H01128607A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- electrode
- thin film
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000009835 boiling Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000674 AJ alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は弾性表面波装置の信頼性向上に係シ、特に大電
力を伝送する弾性表面波装置または大振幅の表面波波動
が定在波として存在する弾性表面波共振器に好適な信頼
性の高い電極や反射器を有する弾性表面波装置に関する
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to improving the reliability of surface acoustic wave devices, and particularly relates to surface acoustic wave devices that transmit large amounts of power or those that transmit large-amplitude surface waves as standing waves. The present invention relates to a surface acoustic wave device having highly reliable electrodes and reflectors suitable for existing surface acoustic wave resonators.
半導体集積回路のＡ１配線に１０５〜Ｉ Ｏ’ Ａ／
ａｎ２程度以上の高密度電流を流した場合には、エレク
トロマイクレーシーンヲ生シ、突起（ヒロックス）、空
隙（ボイド）Ｋよる短絡や断線がしばしば発生する０そ
の原因は、Ａｌ原子が動き易い粒界で拡散によ）移動す
るためであると考えられている。105~IO' A/ for A1 wiring of semiconductor integrated circuit
When a high-density current of about an2 or more is passed, short circuits and disconnections due to electromicrescene formation, protrusions (hilloxes), and voids (K) often occur.The reason for this is that Al atoms move easily. This is thought to be due to movement (by diffusion at grain boundaries).
この対策として特開昭４５−１１３３号、特開昭４９−
２２３９７号公報等に開示されている様に銅（Ｃｕ）を
添加したＡ１配線が用いられている。As a countermeasure to this problem, Japanese Patent Application Laid-open Nos. 1133-1982 and 1973-1133,
As disclosed in Japanese Patent No. 22397 and the like, A1 wiring doped with copper (Cu) is used.
また、Ｔａ、Ｈｆその他の元素の中間層を挾んだＡ１配
線を用いる場合もある・
一方、近年、弾性表面波装置の応用範囲が拡がシ、大電
力を伝送する弾性表面波フィルタや大振幅の表面波波動
が定在波として存在する弾性表面波共像器が用いられる
ようになった。しかし、上記のような弾性表面改装室に
おいては、その送受波電極や反射器の微細なＡｌ電極指
において、電子通信学会論文誌、１９８４年３月、巻Ｊ
６７−Ｃ１第３号、第２７８〜２８５頁に江畑等によっ
て述べられている様に、上記した半導体集積回路のＡｌ
配線電極に生ずるエレクトロマイグレーシ目ンによる場
合と同様の欠陥が発生し、共振器では共振周波数の経時
変化、大電力を伝送する弾性表面波フィルタでは短絡、
断線による出力停止などの故障が頻発していた・弾性表
面波装置１における上記欠陥のメカニズムについて、上
記文献では「弾性表面波によって生ずる基板表面の歪が
、表面上に形成されたＡＪ電極薄膜に内部応力を発生さ
せ、応力が閾値を越えた部分でＡＪ結晶粒界移動が起こ
シ、ボイド及びヒロックスが生ずる０内部応力による粒
界移動は、アイトリプルイー、トランザクシロン、パー
ツ・ハイプリッズ・アンド・パッケージング、巻ＰＨＰ
−７，ｐｐ、 １３４〜１３８． （１９７１年９月）
（ＩＩＥＥＩ。In addition, A1 wiring sandwiching an intermediate layer of Ta, Hf, or other elements may be used. On the other hand, in recent years, the range of applications of surface acoustic wave devices has expanded, and surface acoustic wave filters that transmit large amounts of power and Surface acoustic wave resonators, in which surface wave waves of different amplitudes exist as standing waves, have come into use. However, in the above-mentioned elastic surface refurbished room, the fine Al electrode fingers of the transmitting/receiving electrodes and reflectors are
67-C1 No. 3, pp. 278-285, as stated by Ebata et al.
Defects similar to those caused by electromigration that occur in wiring electrodes occur, changes in resonant frequency over time in resonators, short circuits in surface acoustic wave filters that transmit large power, etc.
Regarding the mechanism of the above-mentioned defect in the surface acoustic wave device 1, where failures such as output stoppage due to disconnection occurred frequently, the above-mentioned document states, ``The distortion of the substrate surface caused by the surface acoustic wave is caused by the AJ electrode thin film formed on the surface. Grain boundary movement due to 0 internal stress, which generates internal stress and causes AJ grain boundary movement where the stress exceeds a threshold value, produces voids and hillocks, is caused by I-Triple E, Transaxilon, Parts Hyperids and... Packaging, volume PHP
-7, pp, 134-138. (September 1971)
(IEEEI.
Ｔｒａｎｓ、 Ｐａｒｔｓ、 Ｈｙｂｒｉｄｓ ａｎｄ
Ｐａａｋｇ、 ）に示される集積回路の・・・温度サ
イクルにおける場合と同じメカニズムと考えられる。」
旨を述べている０上記第１の文献では、この様なＡｌ
マイグレーシｌンによる欠陥対策として、半導体集積回
路で用いられる微量（１〜４重量％）の銅（Ｃｕ）を添
加する方法を述べ、そのマイグレーシロン抑圧に対する
有効性を述べている。Trans, Parts, Hybrids and
It is thought that the mechanism is the same as that in the case of temperature cycling of integrated circuits as shown in Paakg, ). ”
In the first document mentioned above, such Al
This paper describes a method of adding a trace amount (1 to 4% by weight) of copper (Cu), which is used in semiconductor integrated circuits, as a measure against defects caused by migration, and describes its effectiveness in suppressing migration.
従来は、耐電力性、デバイスとしての損失、微細加工に
対する適性、量産性のすべての点で満足できる技術はな
かった。Until now, there has been no technology that has been satisfactory in terms of power durability, loss as a device, suitability for microfabrication, and mass production.
例えばＣｕを添加したＡ１系合金の場合は、第一にｓｏ
ｏｉｍｚ程度の高周波な弾性表面波装置では、伝送電力
、或いは振幅が変化しなくても、表面波歪が大きくなる
ので、大電力動作時には十分な寿命が保証で巷ないと云
う問題があった・第二に膜の硬度が大きくな）易く、ワ
イヤボンディングの歩留夛の低下、更に微細電槽を高精
度に形成する塩素系ガスプラズマを用いた反応性スパッ
タによるドライエツチングに行った場合、 Ｃｕの塩化
物の沸点が高いためにエツチングが難しく、オーバエッ
チを多く必要とし、電極幅が細くなってしまう。またＣ
ｕ塩化物が残留することもあって電極腐食が発生し易い
等の欠点があった。For example, in the case of A1 alloy containing Cu, firstly so
In high-frequency surface acoustic wave devices such as OIMZ, the surface wave distortion increases even if the transmission power or amplitude does not change, so there is a problem that there is no guarantee of a sufficient lifespan when operating at high power. Second, the hardness of the film tends to be large, which reduces the yield of wire bonding, and furthermore, when dry etching is performed by reactive sputtering using chlorine-based gas plasma to form fine capacitors with high precision, Cu Etching is difficult due to the high boiling point of chloride, requiring a lot of overetching, resulting in a narrow electrode width. Also C
There were drawbacks such as the possibility of electrode corrosion due to residual u chloride.
本発明は、耐電力性、デバイスとしての損失、微細加工
に対する適性、量産性の全ての条件を満足させる電極を
備えた弾性表面波装置を提供することを目的とする。An object of the present invention is to provide a surface acoustic wave device equipped with an electrode that satisfies all the conditions of power durability, loss as a device, suitability for microfabrication, and mass production.
上記問題点を解決するために本発明においては、弾性表
面波基板上で弾性表面波を発生、伝搬または反射する電
極の少なくとも一部を、Ｚｎを添加したＡｌ薄１［Ｋよ
シ形成させることにした。ＡＪ薄膜材へのＺｎ添加量は
（Ｌｌ〜５重量％とした。In order to solve the above-mentioned problems, in the present invention, at least a part of the electrode that generates, propagates or reflects surface acoustic waves on the surface acoustic wave substrate is formed by forming a thin Al layer 1 [K] doped with Zn. I made it. The amount of Zn added to the AJ thin film material was (Ll~5% by weight).
また、Ｚｎを添加したＡｌ薄膜をスパッタ法によシ形成
すると緻密な信頼性の高い電極が得られた〇〔作用〕
Ｚｎを添加したＡ１系合金薄膜では、膜抵抗率がＣｕ添
加の場合に比べて多少低いため、弾性表面波フィルタ、
弾性表面波共振器としての損失が小さく、またたの塩化
物や弗化物の沸点が低く、電極形成作業時に塩化物や弗
化物の残留が無いため、電極腐食が発生せず、ドライエ
ツチングによる過度のオーバエッチが避けられ、電極幅
の細シが極めて少なくなる０更に、Ｃｕ添加の場合に比
べ硬度が大きくならず、ワイヤボンディングの歩留シも
向上する。In addition, when an Al thin film doped with Zn was formed by sputtering, a dense and highly reliable electrode was obtained. [Function] In the case of an A1 alloy thin film doped with Zn, the film resistivity was lower than that when Cu was added. Surface acoustic wave filters, because they are somewhat lower than
Since the loss as a surface acoustic wave resonator is small, and the boiling point of chloride and fluoride is low, there is no residual chloride or fluoride during electrode formation, so electrode corrosion does not occur and excessive dry etching is avoided. Over-etching is avoided, and narrow lines in the electrode width are extremely reduced.Furthermore, the hardness is not increased compared to the case of adding Cu, and the yield of wire bonding is improved.
しかもＤＣマグネトロンスパッタ法を適用し、Ｚｎ添加
Ａ！！合金系薄膜で高周波弾性表面波装置の送受波電極
を形成したところ、優れた耐電力性が確認できた０これ
は、Ｚｎ添加ＡＪ系合金薄膜では、Ａｌ原子が其の自己
拡散を抑えられ応力に対して動き難くなシ、電極膜の静
的応力が小さく、弾性表面波によシ高周波応力が加えら
れる膜の場合でも、全応力が小さくなっていることによ
ると考えられる０またＡｊ’原子の自己拡散が抑えられ
るため電流によるエレクトロマイグレーシロンに対する
耐性も大きくなると考えられ、大電流を流す電極等に適
用した結果、優れた結果を得ることが出来た。Moreover, by applying the DC magnetron sputtering method, Zn addition A! ! When the transmitting/receiving electrodes of a high-frequency surface acoustic wave device were formed using an alloy thin film, excellent power durability was confirmed. This is because in the Zn-added AJ alloy thin film, Al atoms are suppressed from self-diffusion and stress is reduced. This is thought to be due to the fact that the static stress of the electrode film is small, and the total stress is small even in the case of a film that is subjected to high-frequency stress due to surface acoustic waves. Since the self-diffusion of is suppressed, it is thought that the resistance to electromigration caused by electric current increases, and when applied to electrodes that carry large currents, excellent results were obtained.
以下、本発明を１面を用いて更に詳しく説明する・第１
図（５Ｌ）は本発明の一夾施例（弾性表面波２開口共振
器）の平面図、第１図（ｂ）は図（Ｌ）中のＡ−Ａ’線
断面図を示す。１は弾性表面波基板で８丁カット水晶基
板を用い、この基板面上に１組の送受波電極２．２′が
開口１０００μｍ５２８対で互いに弾性表面波を送受す
るように設けられてお夛、ポンディングパッド５．５’
ｌ接続されている０ポンプイングツ（ラド３，３′は、
直径２５ 、ｃｇｍのＡ１線またはＡｕ＋ｉｉよシなる
ボンディングワイヤで、カンパッケージステム７の入出
力ピン４，４′と電気的に岸続されている。Hereinafter, the present invention will be explained in more detail using the first page.
Figure (5L) is a plan view of one embodiment of the present invention (surface acoustic wave two-aperture resonator), and Figure 1 (b) is a sectional view taken along the line AA' in Figure (L). 1 is a surface acoustic wave substrate using an 8-cut crystal substrate, and on the surface of this substrate, a set of wave transmitting/receiving electrodes 2.2' are provided with 528 pairs of openings of 1000 μm so as to mutually transmit and receive surface acoustic waves. Ponding pad 5.5'
l The connected 0 pump pumps (RAD 3, 3' are
It is electrically connected to the input/output pins 4 and 4' of the can package stem 7 by a bonding wire made of A1 wire or Au+II having a diameter of 25 cm and a cgm.
ｔた上記１組の送受波電極２．２１の両側には７５０本
の金属ストリップからなる反射器５，５′が設けられ、
２開口弾性表面波共振器を構成している。上記送受波電
極２．２’、反射器５．５′の電極の膜厚は、１１μｍ
で、共振周波数は６９７ＭＨｓｓ ｅ Ｑ峙４０００と
なっておシ、電極材料は、１載、チのＺｎを添加したＡ
／系合金であ、９、ＤＣマグネトロンスパッタ法により
該基板１に蒸着形成された後、ホトエツチング婦よシバ
ターン形成され良ものである。なお、該送受波電極２．
２１、反射器５．５′を形成した基板１は導電性接着剤
６によシＴＯ−５カンパッケージステム７と接着されて
いる。Reflectors 5, 5' made of 750 metal strips are provided on both sides of the pair of transmitting/receiving electrodes 2.21.
It constitutes a two-aperture surface acoustic wave resonator. The film thickness of the electrodes of the above-mentioned wave transmitting/receiving electrode 2.2' and reflector 5.5' is 11 μm.
The resonant frequency was 697 MHss e Q 4000, and the electrode material was A with Zn added.
/ series alloy 9. After being vapor-deposited on the substrate 1 by DC magnetron sputtering, a pattern can be formed by photo-etching. Note that the wave transmitting/receiving electrode 2.
21. The substrate 1 on which the reflector 5.5' is formed is bonded to the TO-5 can package stem 7 by conductive adhesive 6.
本実施例およびＦｉＢ蒸着によ＃）Ｃｕ添加量を変えて
作成した弾性表面波共振器につき加速劣化試験を行った
結果を第２図に示す。加速劣化試験の条件は、周囲温度
１２０℃、入力電力５０〜１００ｍＷである＠同図で、
横軸には弾性表面波共振器に蓄えられるエネルギー、縦
軸には劣化時間Ｔ Ｆ （Ｔｉｍｅｔｏ Ｆａｉｌｕｒ
ｅ）を示している０なお、この場合のＴＦは共振周波数
が試験開始時点から、±５０ＫＨｚ変化した時間を以て
示した。第２図に示す如く、本発明に係る１ｗｔ、％Ｚ
ｎ添加Ａｌ電極を用いた実施例は、α７ ｗｔ、％Ｃｕ
添加ＡｌをＥＢ蒸着した電極を用いた弾性表面波２開器
に対し、同一エネルギーで劣化時間は約４倍となシ、耐
電力性が大幅に向上している。FIG. 2 shows the results of an accelerated deterioration test performed on surface acoustic wave resonators prepared in this example and with varying amounts of Cu added by FiB vapor deposition. The conditions for the accelerated deterioration test are an ambient temperature of 120°C and an input power of 50 to 100 mW.
The horizontal axis represents the energy stored in the surface acoustic wave resonator, and the vertical axis represents the time to failure (T F ).
In this case, TF is indicated by the time during which the resonant frequency changed by ±50 KHz from the start of the test. As shown in FIG. 2, 1wt, %Z according to the present invention
Examples using n-doped Al electrodes include α7 wt, %Cu
Compared to a surface acoustic wave 2 opener using electrodes with added Al deposited by EB evaporation, the deterioration time is approximately 4 times longer with the same energy, and the power durability is significantly improved.
また本発明に係るＺｎｎ添加金合金１１μｍ厚の膜抵抗
率を四端子法によ）測定した０第５図に示すように、Ｚ
ｎ添加の場合の膜抵抗率は、添加量２重量％、１重ｔ％
で、夫々、４１２μΩ−Ｃｍａ＆７８μΩ−ａｍであり
、従来のＣｕ添加の場合よシ若干低くなっていることは
明らかであ）、第４図に示す弾性表面波共振器の周波数
特性においては、従来のものに比べ損失が１５ ｄＢ向
上し九〇また、本発明に係るｚｎ添加Ａｌ系合金薄膜電
極のためのＺｎ添加量は、α１重量−以下では効果が認
められず、逆に添加量を多くして行くと、膜の硬度、歪
が増大し始め、膜抵抗率の増加に伴い弾性表面波装置の
デバイス特性が劣化し、第５図に示すように、耐電力性
も飽和するから、Ｚｎ添加量の上限は５重量％である・
上記実施例では、金属膜ストリップによる反射器を用い
た２開口弾性表面波共振器の場合について説明したが、
本発明はそれに限定されることなく、１開口弾性表面波
共振器、入力側から出力側へ大電力を伝送する自動車電
話分波器用等の弾性表面波フィルタにおいても同様に有
効である。また弾性表面波基板もＳＴカット水晶に限定
されず、ＬｉＮｂＯ３、ＬｉＴａＯ３等各種基板、カッ
ト面方位であっても有効で、レーリー波のみならず擬似
表面波、ｓｓｎｗ、バルク波振動を用いるものにも有効
であるＯ
なお、本発明に係るＺｎ添加Ａｌ系合金薄膜ｔｉｌｔ”
Ｄ Ｃ−ｒグネトロンスバッタ法によ多形成した装置
は、］ＩＢ蒸着法によシミ極を形成したものに比べ、同
一エネルギーにおいて、約１．２倍の耐電力性を有する
ことが確認された。Furthermore, as shown in FIG.
The film resistivity in the case of n addition is 2% by weight and 1% by weight.
(It is clear that they are 412μΩ-Cma and 78μΩ-am, respectively, which are slightly lower than in the case of conventional Cu addition), and the frequency characteristics of the surface acoustic wave resonator shown in Fig. The loss is improved by 15 dB compared to the Zn-added Al-based alloy thin film electrode according to the present invention.In addition, when the amount of Zn added for the Zn-added Al-based alloy thin film electrode is less than α1 weight, no effect is observed; As the film progresses, the hardness and strain of the film begin to increase, and as the film resistivity increases, the device characteristics of the surface acoustic wave device deteriorate, and as shown in Figure 5, the power resistance also saturates. The upper limit of the amount is 5% by weight. In the above example, the case of a two-opening surface acoustic wave resonator using a reflector made of a metal film strip was explained.
The present invention is not limited thereto, but is equally effective in surface acoustic wave filters for one-aperture surface acoustic wave resonators, automobile telephone duplexers, etc. that transmit large amounts of power from the input side to the output side. In addition, surface acoustic wave substrates are not limited to ST-cut crystals, and various substrates such as LiNbO3, LiTaO3, etc., and cut plane orientations are also effective, and can be used not only for Rayleigh waves but also for those using pseudo surface waves, ssnw, and bulk wave vibrations. Furthermore, the Zn-added Al-based alloy thin film tilt'' according to the present invention
It has been confirmed that a device formed using the D C-r gnetron scattering method has about 1.2 times the power durability at the same energy compared to a device whose stain electrodes are formed using the IB evaporation method. It was done.
以上説明したように本発明によれば、弾性表面波装置の
損失の増大を招かずに、微細電極の形成その他の製造歩
留シが向上し、従来のＣｕ添加Ａ１系合金をＢＢ蒸着し
た電極を用いた装置に比し耐電力性が４倍以上の高信頼
性の装置が得られる０As explained above, according to the present invention, the production yield of fine electrode formation and other aspects is improved without causing an increase in the loss of the surface acoustic wave device, and the production yield of the conventional Cu-added A1 alloy is BB-deposited. It is possible to obtain a highly reliable device with more than four times the power resistance compared to a device using 0.
第１図（ａ）は本発明の一実施例（弾性表面波２開口共
振器）の平面図、第１図（１））は図（ａ）中のＡ−Ａ
’線断面図、第２図は本発明の実施例と従来例に対する
耐電力性加速劣化試験結果を示す図、第３図は電極薄膜
用Ａ／に対するＺｎ又は（ｕ添加濃度と抵抗率の関係を
示す区、第４図は本発明実施例２開口共蚤器と従来例の
損失周波数特性図、第５図は電極薄膜用Ａｌに対する添
加物濃度と装置劣化時間との関係を示す図である。
１・・・弾性表面波基板、２．２２・・・送受波電極、
３゜３ζ・・ポンディングパッド、４．４’・・・入出
力ビン、５．５′・・・弾性表面波反射器、７・・・Ｔ
Ｏ−５カンパツケージステム・FIG. 1(a) is a plan view of one embodiment of the present invention (a surface acoustic wave two-aperture resonator), and FIG. 1(1)) is an A-A in FIG.
Figure 2 is a diagram showing the accelerated deterioration test results of power durability for the embodiment of the present invention and the conventional example, and Figure 3 is the relationship between Zn or FIG. 4 is a diagram showing the loss frequency characteristics of the second embodiment of the present invention and the conventional example, and FIG. 5 is a diagram showing the relationship between the concentration of additives to Al for the electrode thin film and the deterioration time of the device. 1... Surface acoustic wave substrate, 2.22... Wave transmitting/receiving electrode,
3゜3ζ...ponding pad, 4.4'...input/output bin, 5.5'...surface acoustic wave reflector, 7...T
O-5 camp cage stem
Claims (3)
を有し、該送受波電極を含め、弾性表面波を発生、伝搬
または反射する電極の少なくとも一部が、Ｚｎを添加し
たＡｌ薄膜よりなることを特徴とする弾性表面波装置。1. A surface acoustic wave substrate has at least one wave transmitting/receiving electrode, and at least a part of the electrodes that generate, propagate or reflect surface acoustic waves, including the wave transmitting/receiving electrode, are made of an Al thin film doped with Zn. A surface acoustic wave device characterized by:
た電極を有することを特徴とする特許請求の範囲第１項
記載の弾性表面波装置。2. 2. The surface acoustic wave device according to claim 1, further comprising an electrode formed by sputtering an Al thin film doped with Zn.
ことを特徴とする特許請求の範囲第１項記載の弾性表面
波装置。3. 2. The surface acoustic wave device according to claim 1, wherein the amount of Zn added to Al is 0.1 to 5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28533787A JPH01128607A (en) | 1987-11-13 | 1987-11-13 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28533787A JPH01128607A (en) | 1987-11-13 | 1987-11-13 | Surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01128607A true JPH01128607A (en) | 1989-05-22 |
Family
ID=17690245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28533787A Pending JPH01128607A (en) | 1987-11-13 | 1987-11-13 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01128607A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340509A (en) * | 1989-07-06 | 1991-02-21 | Murata Mfg Co Ltd | Bulk wave device |
| US6316860B1 (en) | 1997-09-22 | 2001-11-13 | Tdk Corporation | Surface acoustic wave device, and its fabrication process |
| US6903488B2 (en) | 2001-09-21 | 2005-06-07 | Tdk Corporation | SAW device and manufacturing method |
| US7352114B2 (en) | 2003-07-17 | 2008-04-01 | Tdk Corporation | Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410716A (en) * | 1987-07-01 | 1989-01-13 | Toko Inc | Manufacture of piezoelectric transducer |
-
1987
- 1987-11-13 JP JP28533787A patent/JPH01128607A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410716A (en) * | 1987-07-01 | 1989-01-13 | Toko Inc | Manufacture of piezoelectric transducer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340509A (en) * | 1989-07-06 | 1991-02-21 | Murata Mfg Co Ltd | Bulk wave device |
| US6316860B1 (en) | 1997-09-22 | 2001-11-13 | Tdk Corporation | Surface acoustic wave device, and its fabrication process |
| US6903488B2 (en) | 2001-09-21 | 2005-06-07 | Tdk Corporation | SAW device and manufacturing method |
| US7467447B2 (en) | 2001-09-21 | 2008-12-23 | Tdk Corporation | Method of manufacturing a SAW device |
| US7352114B2 (en) | 2003-07-17 | 2008-04-01 | Tdk Corporation | Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
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