JPH01125879A - Manufacture of oxide superconductor thin film - Google Patents
Manufacture of oxide superconductor thin filmInfo
- Publication number
- JPH01125879A JPH01125879A JP62283656A JP28365687A JPH01125879A JP H01125879 A JPH01125879 A JP H01125879A JP 62283656 A JP62283656 A JP 62283656A JP 28365687 A JP28365687 A JP 28365687A JP H01125879 A JPH01125879 A JP H01125879A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film
- oxide superconducting
- superconducting thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002887 superconductor Substances 0.000 title abstract 4
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 5rTiO Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、超電導電子効果を用いた磁気センサ、電磁
波検出器、光スィッチ、ジョセフソン集積回路等に適用
するための高い臨界温度を持つ酸化物超電導薄膜を後の
熱処理無しに製造する方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is an oxidation device with a high critical temperature for application to magnetic sensors, electromagnetic wave detectors, optical switches, Josephson integrated circuits, etc. using superconducting electronic effects. The present invention relates to a method for manufacturing superconducting thin films without subsequent heat treatment.
従来、高い臨界温度を持つ酸化物超電導薄膜の製造方法
として、 ５ｒＴｉＯ，、ＭｇＯなどの単結晶基板にス
パッタリング法により成膜を行い、後に酸素気流中での
熱処理（〜９２０℃程度）を施す方法がある。このよう
な従来のスパッタリング法は、成膜終了直後の高温、低
圧（〜１０−”Ｔｏｒｒ）の状態が存在することにより
十分な酸化が行われず、後の熱処理を必要とする。（例
えば雑誌：電子情報通信学会技術研究報告ＣＰＭ１１７
−４（１９８７） ｐ１９〜２３）。Conventionally, the method for manufacturing oxide superconducting thin films with high critical temperatures is to deposit films on single-crystal substrates such as 5rTiO, MgO, etc. by sputtering, and then perform heat treatment (about 920°C) in an oxygen stream. There is. In such conventional sputtering methods, sufficient oxidation does not occur due to the presence of high temperature and low pressure (~10-'' Torr) conditions immediately after film formation, and subsequent heat treatment is required. (For example, magazines: Institute of Electronics, Information and Communication Engineers Technical Research Report CPM117
-4 (1987) p19-23).
このように従来のスパッタリング法による酸化物超電導
薄膜の製造方法においては、高い臨界温度を持つ酸化物
超電導薄膜は、スパッタリング法によるＹ−Ｂａ−Ｃｕ
−０系の作製を例にとれば、成膜後に酸素気流中での熱
処理（〜９２０℃程度）を施さなければ良好な特性が得
られず、このような高温での熱処理を行うと、トンネル
接合型のジョセフソン素子などを作る上で絶縁膜が破壊
されるなどの問題点があった。In this way, in the conventional method for manufacturing oxide superconducting thin films by sputtering, the oxide superconducting thin film with a high critical temperature is produced by Y-Ba-Cu sputtering.
Taking the production of -0 series as an example, good properties cannot be obtained unless heat treatment is performed in an oxygen stream (about 920°C) after film formation. There were problems such as destruction of the insulating film when making junction-type Josephson devices.
この発明はこのような問題点を解決するためになされた
もので、後の熱処理を必要としない酸化物超電導薄膜の
製造方法を得ることを目的としている。The present invention was made to solve these problems, and aims to provide a method for manufacturing an oxide superconducting thin film that does not require subsequent heat treatment.
この発明に係る酸化物超電導薄膜の製造方法は、スパッ
タリング法により酸化物超電導薄膜を成膜する過程にお
いて、基板を加熱することにより結晶化多結晶薄膜また
は単結晶薄膜を得る工程と、成膜終了直後に酸素ガスを
基板に直接吹きつけることにより膜の酸化の促進、基板
の冷却および常圧への復帰を同時に行う工程とを施す方
法である。The method for producing an oxide superconducting thin film according to the present invention includes a step of heating a substrate to obtain a crystallized polycrystalline thin film or a single crystal thin film in the process of forming an oxide superconducting thin film by a sputtering method, and a step of obtaining a crystallized polycrystalline thin film or a single crystal thin film by heating a substrate, and a step of forming an oxide superconducting thin film by a sputtering method. Immediately thereafter, oxygen gas is directly blown onto the substrate to promote oxidation of the film, cool the substrate, and return the pressure to normal pressure at the same time.
酸化物超電導薄膜としては、町１Ｍよ、Ｃｕおよび０を
含む酸化物で、Ｍ１はＩＩＩａ族の元素、Ｍ２はＩＩａ
族の元素のものがある。The oxide superconducting thin film is an oxide containing Cu and 0, M1 is a group IIIa element, and M2 is an IIa group element.
There are elements of the group.
上記ｍａ族の元素としては、Ｌａ、 Ｖ、 Ｙｂ、 Ｓ
ｅ、 Ｃｅ、Ｐｒ、 Ｓｍ、 Ｈｏ、 Ｅｒ、 Ｎｄ、
ＧｄおよびＴｍのいずれか１種、■ａ族の元素として
はＭｇ、 Ｓｒ、 ＢａおよびＣａのいずれか１種以上
のものがある。The above ma group elements include La, V, Yb, S
e, Ce, Pr, Sm, Ho, Er, Nd,
One of Gd and Tm, and one or more of Mg, Sr, Ba, and Ca are examples of the a-group elements.
この発明における酸化物超電導薄膜の製造方法では、成
膜時に基板加熱を行うことにより結晶化膜を得るととも
に、成膜終了直後に酸素ガスを基板に直接吹きつけるこ
とにより膜の酸化の促進と基板の冷却、常圧への復帰を
同時に行い、高臨界温度の酸化物超電導薄膜を製造する
。この場合、後の熱処理を必要とせず、素子作製のため
の絶縁膜を形成した後で、その絶縁膜を破壊することな
く、その上に新たに高臨界温度の酸化物超電導薄膜の成
膜が可能である。In the method for producing an oxide superconducting thin film in this invention, a crystallized film is obtained by heating the substrate during film formation, and oxygen gas is directly blown onto the substrate immediately after film formation to accelerate the oxidation of the film and the substrate. The oxide superconducting thin film with a high critical temperature is produced by simultaneously cooling and returning to normal pressure. In this case, after forming an insulating film for device fabrication without the need for subsequent heat treatment, a new high-critical-temperature oxide superconducting thin film can be formed on top of it without destroying the insulating film. It is possible.
以下、この発明の酸化物超電導薄膜の製造方法の一実施
例を具体的に説明する。Hereinafter, one embodiment of the method for manufacturing an oxide superconducting thin film of the present invention will be described in detail.
第１図はスパッタリング法によるこの発明の実施例に用
いる酸化物超電導薄膜の製造装置の構成図である。図に
おいて、（１）は真空チャンバ、（２）はスパッタ電極
（基板側）、（３）はスパッタ電極（ターゲット側）、
（４）はスパッタ・ターゲット、（５）は基板加熱ヒー
ター、（６）は基板、（７）はスパッタガス導入口、（
８）は酸化促進ガス導入口、（９）は排気口である。FIG. 1 is a block diagram of an apparatus for producing an oxide superconducting thin film using a sputtering method in an embodiment of the present invention. In the figure, (1) is a vacuum chamber, (2) is a sputter electrode (substrate side), (3) is a sputter electrode (target side),
(4) is a sputtering target, (5) is a substrate heating heater, (6) is a substrate, (7) is a sputtering gas inlet, (
8) is an oxidation promoting gas inlet, and (9) is an exhaust port.
上記装置を使って実施した製造工程を以下に示す。スパ
ッタにより形成される酸化物薄膜の組成がＹＢａ、Ｃｕ
３０．となるように、スパッタ・ターゲット（４）の組
成はＹＢａ２Ｃｕ４．ｓ Ｏａ 、ｓとした。用いた基
板（６）は５ｒＴｉＯ，の単結晶で、加熱ヒーター（５
）により成膜時は７００℃となるようにした。スパッタ
ガス導入口（７）から導入するスパッタガスは２０％０
□−Ａｒガスで、流量は５ｃｃ／ｍｉｎ、真空度は５
Ｘ １０−” Ｔｏｒｒであった。高周波電力ｔｓｏｔ
ｔでスパッタを２時間行い、終了直後に酸化促進ガス導
入口（８）より、酸化ガスを２００ｃｃ／ｍｉｎの流電
で５分間基板に吹きつけ、酸化促進、冷却、常圧への復
帰を行い成膜を終了した。The manufacturing process carried out using the above device is shown below. The composition of the oxide thin film formed by sputtering is YBa, Cu.
30. The composition of the sputter target (4) is YBa2Cu4. s Oa, s. The substrate (6) used was a single crystal of 5rTiO.
), the temperature was set at 700° C. during film formation. The sputter gas introduced from the sputter gas inlet (7) is 20% 0.
□-Ar gas, flow rate 5cc/min, vacuum degree 5
X 10-” Torr. High frequency power tsot
Sputtering was performed at t for 2 hours, and immediately after completion, oxidizing gas was sprayed onto the substrate from the oxidizing gas inlet (8) with a current of 200 cc/min for 5 minutes to promote oxidation, cool it, and return to normal pressure. Film formation has been completed.
上記の操作により得られた酸化物超電導薄膜は後の熱処
理を施すことなく液体窒素温度で超電導特性を示した６
得られた膜厚は１μｍ、臨界温度は９０ｋ、遷移幅は８
ｋ、臨界電流密度は２０万Ａ／ｃｄであった。これらの
値は素子を作製する上において十分な値である。The oxide superconducting thin film obtained by the above procedure showed superconducting properties at liquid nitrogen temperature without any subsequent heat treatment6.
The obtained film thickness was 1 μm, the critical temperature was 90 K, and the transition width was 8
k, and the critical current density was 200,000 A/cd. These values are sufficient for manufacturing the device.
この発明に係わる酸化物超電導薄膜としては、上記実施
例であげたＹ−Ｂａ−Ｃｕ−０系以外に、Ｅｒ−Ｂａ−
Ｃｕ−０系でも可能であり、ターゲット組成がＥｒＢａ
、 Ｃｕ、 ０７である以外はＹ−Ｂａ−Ｃｕ−０系と
同じ条件で成膜を行ったところ、同様に液体窒素温度で
超電導特性を示した。The oxide superconducting thin film according to the present invention includes Er-Ba-
It is also possible to use Cu-0 system, and the target composition is ErBa.
When the film was formed under the same conditions as the Y-Ba-Cu-0 system, except that , Cu, 07 was used, it similarly exhibited superconducting properties at liquid nitrogen temperature.
以上のようにこの発明によれば、スパッタリング法によ
る酸化物超電導薄膜の成膜過程において、基板を加熱す
ることにより結晶化多結晶薄膜あるいは単結晶薄膜を得
る工程と、成膜終了直後に酸素ガスを基板に直接吹きつ
けることにより膜の酸化の促進、基板の冷却および常圧
への復帰を同時に行う工程とを施すことにより、後の熱
処理を施すこと無く、高臨界温度の酸化物超電導薄膜が
得られる効果がある。As described above, according to the present invention, in the process of forming an oxide superconducting thin film by the sputtering method, there are two steps: heating the substrate to obtain a crystallized polycrystalline thin film or a single crystal thin film, and immediately after the completion of the film forming, an oxygen gas By spraying directly onto the substrate to accelerate the oxidation of the film, cooling the substrate, and returning it to normal pressure at the same time, a high critical temperature oxide superconducting thin film can be formed without any subsequent heat treatment. There are benefits to be gained.
第１図はこの発明の一実施例に用いる酸化物超電導薄膜
の製造装置を示す構成図である。
図において、（１）は真空チャンバ、 （２）、（３）
はスパッタ電極、（４）はスパッタ・ターゲット、（５
）は基板加熱ヒーター、（６）は基板、（７）はスパッ
タガス導入口、（８）は酸化促進ガス導入口、（９）は
排気口である。FIG. 1 is a block diagram showing an apparatus for producing an oxide superconducting thin film used in an embodiment of the present invention. In the figure, (1) is a vacuum chamber, (2), (3)
is a sputter electrode, (4) is a sputter target, (5
) is a substrate heating heater, (6) is a substrate, (7) is a sputtering gas inlet, (8) is an oxidation promoting gas inlet, and (9) is an exhaust port.
Claims (4)
する過程において、基板を加熱することにより結晶化多
結晶薄膜または単結晶薄膜を得る工程と、成膜終了直後
に酸素ガスを基板に直接吹きつけることにより膜の酸化
の促進、基板の冷却および常圧への復帰を同時に行う工
程とを施すことを特徴とする酸化物超電導薄膜の製造方
法。(1) In the process of forming an oxide superconducting thin film by the sputtering method, there is a step of heating the substrate to obtain a crystallized polycrystalline thin film or a single crystal thin film, and immediately after the completion of the film formation, oxygen gas is directly blown onto the substrate. A method for producing an oxide superconducting thin film, comprising the steps of simultaneously promoting oxidation of the film, cooling the substrate, and returning to normal pressure.
Ｏを含む酸化物で、Ｍ＿１はIIIａ族の元素、Ｍ＿２は
IIａ族の元素であることを特徴とする特許請求の範囲第
１項記載の酸化物超電導薄膜の製造方法。(2) The oxide superconducting thin film is an oxide containing M_1, M_2, Cu and O, where M_1 is a group IIIa element and M_2 is
The method for producing an oxide superconducting thin film according to claim 1, characterized in that the element is a group IIa element.
Ｐｒ、Ｓｍ、Ｈｏ、Ｅｒ、Ｎｄ、ＧｄおよびＴｍのいず
れか１種であることを特徴とする特許請求の範囲第２項
記載の酸化物超電導薄膜の製造方法。(3) Group IIIa elements are La, Y, Yb, Sc, Ce,
3. The method for producing an oxide superconducting thin film according to claim 2, wherein the material is any one of Pr, Sm, Ho, Er, Nd, Gd, and Tm.
ずれか１種以上であることを特徴とする特許請求の範囲
第２項記載の酸化物超電導薄膜の製造方法。(4) The method for producing an oxide superconducting thin film according to claim 2, wherein the Group IIa element is any one or more of Mg, Sr, Ba, and Ca.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283656A JPH01125879A (en) | 1987-11-10 | 1987-11-10 | Manufacture of oxide superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283656A JPH01125879A (en) | 1987-11-10 | 1987-11-10 | Manufacture of oxide superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125879A true JPH01125879A (en) | 1989-05-18 |
Family
ID=17668354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62283656A Pending JPH01125879A (en) | 1987-11-10 | 1987-11-10 | Manufacture of oxide superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01125879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4855278A (en) * | 1986-06-11 | 1989-08-08 | Fuji Photo Film Co., Ltd. | Heat-sensitive recording material |
-
1987
- 1987-11-10 JP JP62283656A patent/JPH01125879A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4855278A (en) * | 1986-06-11 | 1989-08-08 | Fuji Photo Film Co., Ltd. | Heat-sensitive recording material |
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