JPH01122532A - Magnetic proximity switch device - Google Patents
Magnetic proximity switch deviceInfo
- Publication number
- JPH01122532A JPH01122532A JP62280802A JP28080287A JPH01122532A JP H01122532 A JPH01122532 A JP H01122532A JP 62280802 A JP62280802 A JP 62280802A JP 28080287 A JP28080287 A JP 28080287A JP H01122532 A JPH01122532 A JP H01122532A
- Authority
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- Prior art keywords
- magnetic
- magnet body
- magnet
- element body
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 54
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 8
- 238000006073 displacement reaction Methods 0.000 claims description 13
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract description 17
- 230000007423 decrease Effects 0.000 abstract description 7
- 239000000696 magnetic material Substances 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 235000014676 Phragmites communis Nutrition 0.000 description 4
- 210000000988 bone and bone Anatomy 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 244000145845 chattering Species 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、強磁性体磁気抵抗素子を用いた磁気近接スイ
ッチ装置に関するもので、さらに評言すれば、検出能力
が優れかつ充分に小型化が可能である近接スイッチを安
価に得ることができるようにすることを目的とするもの
である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetic proximity switch device using a ferromagnetic magnetoresistive element. The purpose of this invention is to make it possible to obtain a proximity switch at a low cost.
位置出し装置とか検出装置の主要部として利用されてい
る近接スイッチ装置としては、リードスイッチ型、高周
波発振型、静電容量型、そして光スイツチ型等がある。Proximity switch devices used as main parts of positioning devices and detection devices include reed switch types, high frequency oscillation types, capacitance types, and optical switch types.
リードスイッチ型のものは、構造が簡単であると共に安
価であると云う利点を持っており、高周波発振型のもの
は、あらゆる金属体を極めて高い精度で検出することが
できると共に検出動作が安定していると云う利点を持っ
ており、静電容量型のものは、金属に限らずあらゆる物
体を検出することができると云う利点を持っており、そ
して光スイツチ型のものは、比較的大きな検出距離範囲
を得ることができると共に被検出物までの距離を正確に
検出することができると云う利点を持っている。The reed switch type has the advantage of having a simple structure and low cost, while the high frequency oscillation type can detect all metal objects with extremely high accuracy and has stable detection operation. The capacitive type has the advantage of being able to detect all kinds of objects, not just metals, and the optical switch type has the advantage of being able to detect relatively large objects. This method has the advantage of being able to obtain a range of distances and accurately detecting the distance to the object to be detected.
しかしながら、上記した従来の近接スイッチ装置には、
それぞれに基本動作上の、または使用機能上の、そして
実用上の不都合を持っている。However, the conventional proximity switch device described above has
Each has its own disadvantages in terms of basic operation, functionality, and practical use.
すなわち、リードスイッチ型のものは、リードスイッチ
そのものが有接点構造体であるため、外部から作用する
振動とか衝撃に弱（、時としてチャタリングを起こすこ
とがあり、常に安定したそして正確な検出動作を得るこ
とができるとは限らないと云う不都合があった。In other words, since the reed switch itself is a contact structure, the reed switch type is susceptible to external vibrations and shocks (sometimes chattering may occur), making it difficult to always ensure stable and accurate detection operation. There was an inconvenience that it was not always possible to obtain the required amount.
また、高周波発振型のものは、その検出動作の安定性お
よび正確性により、現在量も多数使用されているのであ
るが、高価であると共に小型化に限界があると云う不満
がある。Further, high-frequency oscillation type devices are currently used in large numbers due to the stability and accuracy of their detection operation, but there are complaints that they are expensive and that there is a limit to miniaturization.
さらに、静電容量型のものは、スイッチ装置を構成する
ための必要構成部品数が多く、このため近接スイッチ装
置とはかなり大型とならざるを得ないと共に、かなり高
価なものとなると云う不都合がある。Furthermore, the capacitive type requires a large number of components to configure the switch device, and therefore has the disadvantage of being considerably larger and more expensive than a proximity switch device. be.
そして、光スイツチ型のものは、ホコリ等の汚れの付着
による検出動作不能と云う動作機能上の致命的な欠点を
持っていると共に、装置全体が大型となり、価格も高い
と云う欠点を持っている。The optical switch type has a fatal drawback in terms of its operational function: detection cannot be performed due to adhesion of dust and other contaminants, and the device as a whole is large and expensive. There is.
そこで、本発明は、上記した従来の近接スイッチ装置の
内、最も多数使用されている高周波発振型のものを対象
として、この高周波発振型近接スイッチ装置と同等の性
能を有し、かつ高周波発振型近接スイッチ装置よりもは
るかに安価で小型化が可能である近接スイッチ装置を提
供すべく、安価に入手可能でると共に極めて小型である
強磁性体磁気抵抗素子を使用して近接スイッチ装置を構
成することをその技術的課題とするものである。Therefore, the present invention targets the high-frequency oscillation type, which is the most widely used type of the conventional proximity switch device described above, and has the same performance as the high-frequency oscillation type proximity switch device and a high-frequency oscillation type proximity switch device. In order to provide a proximity switch device that is much cheaper and more compact than a proximity switch device, the proximity switch device is configured using a ferromagnetic magnetoresistive element that is inexpensively available and extremely small. is the technical issue.
以下、本発明を、本発明の一実施例を示す図面を参照し
ながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to drawings showing one embodiment of the present invention.
本発明の手段は、
一対の永久磁石２．２を、互いに同一磁極を相互間に一
定間隔開けて対向配置して構成した磁石体１を有するこ
と、
この磁石体１０両永久磁石２．２間に侵入可能に配置さ
た強磁性体磁気抵抗素子（以下、単にＭＲ素子と記す）
体４を有すること、
このＭＲ素素子体色接続される比較器５を有すること、
磁石体１とＭＲ素素子体色の組合せ物に対して、接近離
反移動可能に設けられた磁性体７を有すること、
磁石体１とＭＲ素素子体色を、磁石体１の両永久硼石２
．２の中心を結ぶ直線の中点に直交する直線Ｋに沿って
変位調整可能に組付けること、にある。The means of the present invention includes a magnet body 1 configured by arranging a pair of permanent magnets 2.2 facing each other with the same magnetic poles spaced apart from each other at a constant distance; A ferromagnetic magnetoresistive element (hereinafter simply referred to as an MR element) arranged so as to be able to penetrate into the
a comparator 5 connected to the MR element body color; and a magnetic body 7 provided so as to be movable toward and away from the combination of the magnet body 1 and the MR element body color. have the same color as the magnet body 1 and the MR element body color, both permanent borite 2 of the magnet body 1;
．． The purpose is to assemble the parts so that their displacement can be adjusted along a straight line K that is perpendicular to the midpoint of the straight line connecting the centers of the two parts.
磁石体１に対してＭＲ素素子体色変位可能に設けたのは
、この磁石体Ｉに対するＭＲ素素子体色変位により、磁
石体１からＭＲ素素子体色作用する磁束の作用形態を変
化させ、この磁束の作用形態の変化に従ってＭＲ素素子
体色出力、すなわち抵抗値を変化させるためであるから
、ＭＲ素素子体色磁石体１に対する組付は姿勢は、その
両表面を直線Ｋに沿わせたものとなる。The reason why the MR element body color is displaceable with respect to the magnet body 1 is that by changing the MR element body color with respect to the magnet body I, the mode of action of the magnetic flux acting on the MR element body color from the magnet body 1 is changed. The purpose of this is to change the MR element color output, that is, the resistance value, in accordance with the change in the mode of action of this magnetic flux. It will be the same.
〔作用］
磁石体１の両永久磁石２．２に対してＭＲ素素子体色直
線に上に位置すること、および両永久磁−５＝
石２．２は同一磁極を対向させていることとにより、第
３図に示すように、ＭＲ素素子体色中心を両永久磁石２
．２の中点に一致させて位置させると、両永久磁石２．
２からＭＲ素素子体色作用する磁束は、ＭＲ素素子体色
表面に沿ったＸ方向およびＸ方向に沿って正負均等とな
る。すなわち、第３図において、Ｘ軸の正方向に作用す
る磁束骨とＸ軸の負方向に作用する磁束骨とが等しく、
またｙ軸の正方向に作用する磁束骨とｙ軸の負方向に作
用する磁束骨とが等しくなり、実質的にはＭＲ素素子体
色は外部から磁力が作用していない状態となる。[Function] The magnet body 1 is located above the MR element body color line with respect to both permanent magnets 2.2, and both permanent magnets -5 = The stones 2.2 have the same magnetic pole facing each other. As shown in Fig. 3, the color center of the MR element body is aligned with both permanent magnets
．． When placed so as to match the midpoint of both permanent magnets 2.
The magnetic flux acting on the MR element body from 2 is equal in positive and negative directions along the X direction and the X direction along the MR element body surface. That is, in FIG. 3, the magnetic flux bones acting in the positive direction of the X-axis and the magnetic flux bones acting in the negative direction of the X-axis are equal,
Further, the magnetic flux bone acting in the positive direction of the y-axis and the magnetic flux bone acting in the negative direction of the y-axis become equal, and the MR element body is substantially in a state where no magnetic force acts from the outside.
この状態、すなわちＭＲ素素子体色磁石体重からの磁力
が実質的に作用していない状態から、第４図に示すよう
に、この磁石体１とＭＲ素素子体色の組合せ物の近傍に
被検出体としての磁性体７が位置すると、磁石体１から
の磁束の一部がこの磁性体７側に引かれて、磁石体１か
らＭＲ素素子体色作用していた磁束の作用分布が変化し
、Ｘ軸方向またはｙ軸方向の何れかに沿って作用する磁
−６〜
束量が増大し、この作用磁束量の増大によりＭＲ素素子
体表出力電圧が増減変化する。このＭＲ素素子体表出力
電圧の増減変化を検出することにより、磁性体７すなわ
ち被検出体を検出できることになる。From this state, that is, the state in which the magnetic force from the weight of the MR element color magnet is not substantially acting, the magnetic force is applied to the vicinity of the combination of the magnet 1 and the MR element color, as shown in FIG. When the magnetic body 7 as a detection object is located, a part of the magnetic flux from the magnet 1 is drawn toward the magnetic body 7, and the distribution of the magnetic flux acting from the magnet 1 on the MR element changes. However, the amount of magnetic flux acting along either the X-axis direction or the y-axis direction increases, and this increase in the amount of acting magnetic flux causes the MR element body surface output voltage to increase or decrease. By detecting increases and decreases in the output voltage of the MR element body surface, the magnetic body 7, that is, the object to be detected can be detected.
また、この検出動作とは別に、ＭＲ素素子体表対する磁
石体１の相対移動変位に伴うＭＲ素素子体表出力特性は
、直線Ｋをｙ軸と一致させ、このｙ軸に沿って磁石体ｌ
をＭＲ素素子体表対して相対移動させると、第５図（ｂ
）のＴ曲線のようになる。すなわち、ＭＲ素素子体表対
する印加電圧を、ｙ軸方向への磁力が増大することによ
り出力が減少し、Ｘ軸方向への磁力が増大すると出力が
増大するようぼ印加してお（と、磁石体１の中心とＭＲ
素素子体表中心とが一致した位置、すなわち変位量！が
零のところで最大出力値となり、このｙ軸方向に沿った
変位量！が大きくなるに従ってＭＲ素素子体表出力電圧
値は減少する出力特性を描く。Apart from this detection operation, the output characteristics of the MR element body surface due to the relative displacement of the magnet 1 with respect to the MR element body surface are determined by aligning the straight line K with the y-axis and moving the magnet body along this y-axis. l
When the MR element is moved relative to the body surface of the MR element, as shown in FIG.
) will look like the T curve. That is, the voltage applied to the surface of the MR element is applied so that the output decreases as the magnetic force in the y-axis direction increases, and the output increases as the magnetic force increases in the x-axis direction. Center of magnet 1 and MR
The position where the center of the element body surface coincides, that is, the amount of displacement! The maximum output value is reached when is zero, and the displacement along this y-axis direction! The MR element body surface output voltage value shows an output characteristic that decreases as the value increases.
この変位１ｐの変化によるＭＲ素素子体表出力値の変化
と、磁石体１とＭＲ素素子体表の組合せ物に対する磁性
体７の接近離反によるＭＲ素素子体表出力値の変化とは
全く等しいので、予め変位量ｌを設定してＭＲ素素子体
表出力値を一定値に設定し、この状態から磁性体７の接
近によるＭＲ素素子体表出力の低下を知ることにより、
磁性体７の検出を達成できることになる。The change in the MR element body surface output value due to this change in displacement 1p is completely equal to the change in the MR element body surface output value due to the approach and separation of the magnetic body 7 from the combination of the magnet body 1 and the MR element body surface. Therefore, by setting the displacement l in advance to set the MR element body surface output value to a constant value, and from this state, knowing the decrease in the MR element body surface output due to the approach of the magnetic body 7,
Detection of the magnetic material 7 can be achieved.
すなわち、変位量！を設定固定することによりＭＲ素素
子体表出力値Ｖ４を予め設定すると共に、このＭＲ素素
子体表接続された比較器５のしきい値Ｖ５を、この出力
値ｖ４よりも小さい値に設定しておくのである。この状
態から、磁石体１とＭＲ素素子体表の組合せ物に対して
磁性体７が接近してくると、前記した説明のように、Ｍ
Ｒ素素子体表対する磁石体１からのｙ軸方向に沿った磁
束の作用量が増大し、もってＭＲ素素子体表出力電圧値
が低下する。磁性体７が成る一定の接近距離まで接近す
ると、ＭＲ素素子体表出力電圧値が比較器５のしきい値
ｖ５よりも小さくなり、このため比較器５はその出力の
レベルを変化させ、この比較器５の出力レベルの変化に
より磁性体７の接近を検知することができる。In other words, the amount of displacement! By setting and fixing, the MR element body surface output value V4 is set in advance, and the threshold value V5 of the comparator 5 connected to this MR element body surface is set to a value smaller than this output value v4. I'll keep it. From this state, when the magnetic body 7 approaches the combination of the magnet body 1 and the MR element body surface, the M
The amount of action of the magnetic flux along the y-axis direction from the magnet body 1 on the R element body surface increases, thereby decreasing the MR element body surface output voltage value. When the magnetic body 7 approaches to a certain distance, the MR element body surface output voltage value becomes smaller than the threshold value v5 of the comparator 5, and therefore the comparator 5 changes its output level. The approach of the magnetic body 7 can be detected by a change in the output level of the comparator 5.
このように本発明装置による磁性体７の検出動作は、一
定値に設定された比較器５のしきい値ｖ５に対する磁性
体７によるＭＲ素素子体表出力値ｖ４の変化によって達
成されるものであり、磁性体７によるＭＲ素素子体表出
力値ｖ４の変化は、磁性体７の変位に従って一定の線形
に沿って変化するものであるので、予め設定されるしき
い値ｖ５と出力値ｖ４と差を適当に設定変更することに
より、検出すべき磁性体７の位置、すなわち検出距離を
自由に設定変更できることになる。As described above, the detection operation of the magnetic body 7 by the device of the present invention is achieved by the change in the MR element body surface output value v4 of the magnetic body 7 with respect to the threshold value v5 of the comparator 5 set to a constant value. Since the change in the MR element body surface output value v4 due to the magnetic body 7 changes along a certain linear line according to the displacement of the magnetic body 7, the preset threshold value v5 and the output value v4 By appropriately setting and changing the difference, the position of the magnetic body 7 to be detected, that is, the detection distance can be freely set and changed.
また、極めて小さいＭＲ素素子体表よび比較器５と、小
型化が充分可能である磁石体１とにより構成されるので
、全体を極めて小型にすることができると共に、構成部
品点数が少ないので、その組立製造が容易であり、かつ
各構成部品の何れもが安価なものであるので、装置全体
を安価に製作することかできることになる。In addition, since it is composed of an extremely small MR element body surface and a comparator 5, and a magnet body 1 that can be sufficiently miniaturized, the whole can be made extremely compact, and the number of component parts is small. Since it is easy to assemble and manufacture, and all of the component parts are inexpensive, the entire device can be manufactured at low cost.
第１図および第２図図示実施例の場合、磁石体１は、一
対の永久磁石２．２を非磁性材料製の固定板３に固定し
て構成されており、ＭＲ素素子体表電源６に対する接続
は、ＭＲ素素子体表外部磁力が作用していない状態にお
ける出力電圧、すなわち不平衡電圧がＯＣＶ〕となるよ
うに設定されており、さらにＭＲ素素子体表磁石体１に
対する組付は姿勢は、相互にｙ軸に沿って変位するよう
に組付けていると共に、ＭＲ素素子体向自体ｙ軸に沿っ
た磁力の作用変化により出力電圧が減少するように設定
されている。In the embodiment shown in FIGS. 1 and 2, the magnet body 1 is constructed by fixing a pair of permanent magnets 2.2 to a fixing plate 3 made of a non-magnetic material, and a power source 6 on the surface of the MR element body. The connection to the MR element body surface is set so that the output voltage when no external magnetic force is acting on the MR element body surface, that is, the unbalanced voltage is OCV], and the assembly to the MR element body surface magnet body 1 is as follows. The positions of the MR elements are set so that they are mutually displaced along the y-axis, and the output voltage decreases due to changes in the action of magnetic force along the y-axis.
第２図図示実施例において、両永久磁石２と、両磁極方
向に沿った幅が４ ｍｍ、厚さ幅が３ｍｍ、そして奥行
き幅が３ｎｗｎの直方体であり、発生する磁力は、表面
磁力にて約１０００ガウスであった。In the embodiment shown in FIG. 2, both permanent magnets 2 are rectangular parallelepipeds with a width along both magnetic pole directions of 4 mm, a thickness width of 3 mm, and a depth width of 3 nwn, and the generated magnetic force is a surface magnetic force. It was about 1000 Gauss.
また、比較機５は、そのしきい値ｖ５を一５〜１５ｍＶ
の範囲で設定変更可能とした。Further, the comparator 5 sets the threshold value v5 to -5 to 15 mV.
The settings can be changed within the range.
この永久磁石２および比較器５により構成された磁気近
接スイッチ装置の検出動作結果は、変位量！がＯｍｍで
検出距離が約３ ｍｍ、変位量Ｐが０．１−】 〇−
ｍｍで検出距離が約４胴、変位量ｌが０．１５ｍｍで検
出距離が約５ ｍｍとなり、極めて高い検出の能力を発
揮した。The detection operation result of the magnetic proximity switch device composed of the permanent magnet 2 and the comparator 5 is the amount of displacement! 0 mm, the detection distance is about 3 mm, displacement P is 0.1 mm, the detection distance is about 4 mm, displacement l is 0.15 mm, the detection distance is about 5 mm, and extremely high detection distance is achieved. He demonstrated his ability.
以上の説明から明らかなごとく、本発明は、接近する被
検出体の正確で確実な検出動作機能を充分に発揮するこ
とができ、また装置全体を極めて小型にすることができ
ると共に、極めて安価に製造することができ、さらに被
検出体の検出したい距離を容易にかつ正確に設定できる
等多くの優れた効果を発揮するものである。As is clear from the above description, the present invention can fully exhibit the accurate and reliable detection function of an approaching detected object, and can also make the entire device extremely compact and extremely inexpensive. It is easy to manufacture and exhibits many excellent effects such as being able to easily and accurately set the distance at which the object to be detected is desired to be detected.
第１図は、本発明装置の一実施例の構成を示す電気回路
図である。
第２図は、磁石体の構成例と、この磁石体に対するＭＲ
素子体の組付は位置関係を示す図で、第２図（ａ）は正
面図、第２図（ｂ）は底面図である。
第３図は、本発明装置に使用されるＭＲ素子体と磁石体
との組合せ物の動作説明図である。
第４図は、磁石体とＭＲ素子体との組合せ物の磁性体の
影響による動作形態変化を示す説明図である。
第５図は、本発明装置の動作特性の説明図で、第５図（
ａ）は一対の永久磁石とＭＲ素子体との相対移動位置関
係を示す説明図、第５図（ｂ）はＭＲ素子体の出力特性
線図である。
符号の説明
ｌ；磁石体、２；永久磁石、３；固定板、４；ＭＲ素子
体、５；比較器、６；電源、７；磁性体、Ｋ；直線、ｌ
；変位量、ｖ４；出力値、Ｖ５；しきい値。FIG. 1 is an electrical circuit diagram showing the configuration of one embodiment of the device of the present invention. Figure 2 shows an example of the structure of a magnet and the MR for this magnet.
The assembly of the element body is a diagram showing the positional relationship, and FIG. 2(a) is a front view, and FIG. 2(b) is a bottom view. FIG. 3 is an explanatory diagram of the operation of a combination of an MR element body and a magnet body used in the apparatus of the present invention. FIG. 4 is an explanatory diagram showing a change in the operating form due to the influence of the magnetic material of a combination of a magnet body and an MR element body. FIG. 5 is an explanatory diagram of the operating characteristics of the device of the present invention.
5(a) is an explanatory diagram showing the relative movement positional relationship between a pair of permanent magnets and the MR element body, and FIG. 5(b) is an output characteristic diagram of the MR element body. Explanation of symbols l; magnet body, 2; permanent magnet, 3; fixed plate, 4; MR element body, 5; comparator, 6; power supply, 7; magnetic body, K; straight line, l
; displacement amount, v4; output value, V5; threshold value.
Claims (1)
対向配置した磁石体（１）と、該磁石体（１）の両永久
磁石（２）間に侵入位置可能に配置された強磁性体磁気
抵抗素子体（４）と、該強磁性体磁気抵抗素子体（４）
に接続される比較器（５）と、前記磁石体（１）と強磁
性体磁気抵抗素子体（４）との組合せ物に対して接近離
反移動可能に設けた磁性体（７）とから成り、前記磁石
体（１）と強磁性体磁気抵抗素子体（４）とを、前記磁
石体（１）の両永久磁石（２）の中心を結ぶ直線の中点
で直交する直線（Ｋ）に沿って変位調整可能に組付けて
成る磁気近接スイッチ装置。A magnet body (1) in which a pair of permanent magnets (2) with the same magnetic poles are arranged facing each other with a certain distance between them, and a ferromagnetic material that is arranged so as to be able to enter between both permanent magnets (2) of the magnet body (1). a ferromagnetic magnetoresistive element (4); and a ferromagnetic magnetoresistive element (4).
and a magnetic body (7) that is movable toward and away from the combination of the magnet body (1) and the ferromagnetic magnetoresistive element body (4). , the magnet body (1) and the ferromagnetic magnetoresistive element body (4) are connected to a straight line (K) that intersects perpendicularly at the midpoint of the straight line connecting the centers of both permanent magnets (2) of the magnet body (1). A magnetic proximity switch device that is assembled so that its displacement can be adjusted along the axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280802A JPH01122532A (en) | 1987-11-06 | 1987-11-06 | Magnetic proximity switch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280802A JPH01122532A (en) | 1987-11-06 | 1987-11-06 | Magnetic proximity switch device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01122532A true JPH01122532A (en) | 1989-05-15 |
Family
ID=17630176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62280802A Pending JPH01122532A (en) | 1987-11-06 | 1987-11-06 | Magnetic proximity switch device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01122532A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0676706A (en) * | 1992-08-27 | 1994-03-18 | Nippon Autom Kk | Proximity switch for magnetic body detection |
| JPH09511357A (en) * | 1994-08-31 | 1997-11-11 | シーメンス アクチエンゲゼルシヤフト | Proximity switch with magnetic field sensitive sensor |
| JP2012204268A (en) * | 2011-03-28 | 2012-10-22 | Tokai Rika Co Ltd | Non-contact switch and magnetic sensor |
-
1987
- 1987-11-06 JP JP62280802A patent/JPH01122532A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0676706A (en) * | 1992-08-27 | 1994-03-18 | Nippon Autom Kk | Proximity switch for magnetic body detection |
| JPH09511357A (en) * | 1994-08-31 | 1997-11-11 | シーメンス アクチエンゲゼルシヤフト | Proximity switch with magnetic field sensitive sensor |
| US6043646A (en) * | 1994-08-31 | 2000-03-28 | Siemens Aktiengesellschaft | Proximity switch with magnetic field-sensitive sensor |
| JP2012204268A (en) * | 2011-03-28 | 2012-10-22 | Tokai Rika Co Ltd | Non-contact switch and magnetic sensor |
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