JPH01119569A - Sintering jig for low-temperature sintering substrate - Google Patents
Sintering jig for low-temperature sintering substrateInfo
- Publication number
- JPH01119569A JPH01119569A JP27677387A JP27677387A JPH01119569A JP H01119569 A JPH01119569 A JP H01119569A JP 27677387 A JP27677387 A JP 27677387A JP 27677387 A JP27677387 A JP 27677387A JP H01119569 A JPH01119569 A JP H01119569A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- low
- particle diameter
- firing
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000009766 low-temperature sintering Methods 0.000 title claims description 8
- 238000005245 sintering Methods 0.000 title description 2
- 239000002245 particle Substances 0.000 claims abstract description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 16
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 15
- 239000011362 coarse particle Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 abstract description 5
- 230000035939 shock Effects 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910052570 clay Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- 239000012784 inorganic fiber Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001586 aluminite Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、電子部品、特に低温焼結型基板の焼成に３い
て、棚板、匣鉢及びセッター等として使用することので
きる焼成用治具に関するものである。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a baking jig that can be used as a shelf, a sagger, a setter, etc. in the baking of electronic components, especially low-temperature sintered substrates. It's about the ingredients.
（従来の技術）
電子部品の中で、セラミック基板は従来よりアルミナ質
のものか良く使用されておいり、テープ成形でグリーン
シートを成形後、棚板、匣鉢、セッター等に載せて１５
００〜１６００ ”Ｃの高温で焼成し製品化されている
。これら棚板、匣鉢、セッター等はムライト質、アルミ
ナ質、ジルコニア賀の耐火物が使用されており、前記グ
リーンシートの収縮を均一に行わせるため、表面の平滑
度が極めて高い水準で要求されている。(Prior technology) Among electronic components, ceramic substrates have traditionally been made of alumina, and after forming green sheets using tape forming, they are placed on shelves, saggers, setters, etc. for 15 minutes.
Products are produced by firing at high temperatures of 0.00 to 1600"C. Mullite, alumina, and zirconia refractories are used for these shelf boards, saggers, setters, etc., and the shrinkage of the green sheets is uniform. Because of this, extremely high levels of surface smoothness are required.
（発明が解決しようとする問題点）
セラミック基板の低コスト化をより一層促進するために
、最近になって結晶化ガラス質を代表とした１０００℃
付近で焼結可能な低温焼結型基板の開発が激しく行われ
ている。焼成温度の低下により、エネルギー費の節約、
前記棚板、匣鉢。(Problems to be Solved by the Invention) In order to further reduce the cost of ceramic substrates, recently, 1000° C.
The development of low-temperature sintered substrates that can be sintered is being actively conducted in the vicinity. Lower firing temperatures save energy costs,
Said shelves and saggers.
セッター等焼成用治具にかかる消耗費用の低減、及び高
速焼成による生産性の向上が、効果として期待されてい
る。The expected effects are a reduction in consumable costs for firing jigs such as setters, and an improvement in productivity due to high-speed firing.
低温焼結型基板の多くは、ガラス相を含有したものであ
るため、焼成時に軟化しやすく、前記焼成用治具と付着
しやすいという欠点があり、逆に前記焼成用治具の表面
を粗くしたり、敷粉を中間に配置するような構造をとっ
て付着しに＜〈シていた。しかし、表面が粗くなると前
記グリーンシートが収縮する際に引っかかりによってそ
の収縮率に差異が生じて、特に回路形成後に焼成するよ
うな場合には回路の断線が生ずるという問題点があった
。Many low-temperature sintered substrates contain a glass phase, so they tend to soften during firing and easily adhere to the firing jig. Or, the structure was such that the bedding powder was placed in the middle to make it stick. However, when the surface becomes rough, the green sheet gets caught when it contracts, resulting in a difference in the shrinkage rate, and there is a problem in that the circuit breaks, especially when the green sheet is fired after circuit formation.
一方、高速焼成を行う際には従来の耐火物の焼成用治具
ては熱衝撃に弱く、期待していた程の高速焼成は不可能
であった。On the other hand, when performing high-speed firing, conventional refractory firing jigs are susceptible to thermal shock, making it impossible to perform high-speed firing as expected.
このような問題点に対して、たとえば、特開昭６２−１
３１１９１号公報や特開昭６２−１３１１９２号公報て
提案されている如きセッター構造が考えられている。し
かしながら、これらの構造では、作業が非常に繁雑とな
ったり、セッターそのものが高価となり基板の低コスト
化が実現できないという問題点があった。For example, Japanese Patent Laid-Open No. 62-1
Setter structures such as those proposed in Japanese Patent Application Laid-open No. 31191 and Japanese Patent Application Laid-Open No. 131192/1988 have been considered. However, these structures have problems in that the work is very complicated and the setter itself is expensive, making it impossible to reduce the cost of the substrate.
本発明はこれらの問題点を解決すべく、簡単な構造で、
しかも作業性に優れ、高速焼成にも適応できる構造を有
した低温焼結型基板焼成用治具な提供することを目的と
する。In order to solve these problems, the present invention has a simple structure,
Moreover, it is an object of the present invention to provide a low-temperature sintering type substrate firing jig that has excellent workability and a structure that can be adapted to high-speed firing.
（問題点を解決するための手段）
即ち、本発明は、焼結体ｌと、無機ガラス質の中間結合
層２と、平均粒子径が２０μｍ以上であり、最大粒子径
と最小粒子径とが前記平均粒子径の±２０％の範囲内に
含まれた粒径分布を有する球状アルミナ、球状ムライト
、球状ジルコニアとから選ばれる少なくとも一種あるい
は二種以上の粗粒子層３とから成ることを特徴とする低
温焼結型基板焼成用治具である。(Means for Solving the Problems) That is, the present invention comprises a sintered body 1, an inorganic vitreous intermediate bonding layer 2, an average particle size of 20 μm or more, and a maximum particle size and a minimum particle size. It is characterized by comprising a coarse particle layer 3 of at least one kind or two or more kinds selected from spherical alumina, spherical mullite, and spherical zirconia having a particle size distribution within a range of ±20% of the average particle diameter. This is a low temperature sintering type substrate firing jig.
（発明の作用）
本発明は、次の３つの項目を基本構成要因とするもので
ある。(Action of the Invention) The present invention has the following three items as basic constituent factors.
■高速焼成を可能とするため、耐熱衝撃性に強く、熱容
量の小さな基材を用いていること。■To enable high-speed firing, a base material with strong thermal shock resistance and low heat capacity must be used.
■低温焼結型基板４の付着の防止と、グリーンシートの
収縮率を均一に行わせるため、基板４と焼成用治具とを
多数の点接触で構成していること。(2) In order to prevent the low-temperature sintering type substrate 4 from adhering and to make the shrinkage rate of the green sheet uniform, the substrate 4 and the firing jig should be in contact with each other at many points.
■作業性の良い焼成用治具とするため、基材と点接触化
構成物とを中間結合層２で結合して一体化せしめた構造
としていること。(2) In order to provide a firing jig with good workability, the base material and the point-contact structure are bonded and integrated by an intermediate bonding layer 2.
前記焼結体ｌは、本発明の焼成用治具の基材となるもの
であって、使用時の強度を満足することが必要である。The sintered body 1 serves as a base material for the firing jig of the present invention, and is required to have sufficient strength during use.
したがって、従来のアルミナ質、ムライト質、コージェ
ライト質、炭化ケイ素質、窒化ケイ素質、ジルコニア質
、粘土質等のれんが質のものは使用可能である。特に高
速焼成に対応するためには従来のれんが質のものの中で
も多孔質のものが適しておりコージェライト質、粘土質
、ムライト質のものは良く利用されている。しかし、セ
ラミック基板の低コスト化をより一層促進させるために
は、熱容量が小さく耐熱衝撃性に優れ、しかも低密度で
取り扱い強度を満足できる耐熱性無機質繊維を主体とし
た成形体を基材として用いることが好ましい。具体的に
は、その密度が０．６〜１．５ｇ／ｃｍ３の範囲にあり
、常温曲げ強度が５０〜１５０ ｋ ｇ ｆ ／ ｃゴ
の範囲にあることが良い。ここで、耐熱性無機質繊維と
しては、シリカ−アルミナ質、アルミナ結晶質、ムライ
ト結晶質等から選ばれるものであり、アルミナ、ムライ
ト等の耐火性粉末と無機結合剤とを配合後、１４００〜
１６００℃の温度で焼成して成形される。前記密度が、
０．６ｇ／ｃｒｒｙ’未満だと強度が不充分で粉化しや
すくなったり、使用時に基材のカケや割れが生じやすく
消耗が厳しくなって好ましくな（，１，５ｇ／ｃｍ″を
越えるのもは、熱容量が大きくなって低コスト化の目標
を達成できず好ましくない。Therefore, conventional brick materials such as alumina, mullite, cordierite, silicon carbide, silicon nitride, zirconia, and clay can be used. Among conventional brick materials, porous materials are particularly suitable for high-speed firing, and cordierite, clay, and mullite materials are often used. However, in order to further reduce the cost of ceramic substrates, it is necessary to use a molded body mainly made of heat-resistant inorganic fibers as a base material, which has a small heat capacity, excellent thermal shock resistance, and has low density and satisfactory handling strength. It is preferable. Specifically, it is preferable that the density is in the range of 0.6 to 1.5 g/cm3, and the room temperature bending strength is in the range of 50 to 150 kgf/c. Here, the heat-resistant inorganic fiber is selected from silica-alumina, alumina crystal, mullite crystal, etc., and after blending a refractory powder such as alumina or mullite with an inorganic binder,
It is molded by firing at a temperature of 1600°C. The density is
If it is less than 0.6 g/cm'', the strength is insufficient and it tends to powder, and the base material tends to chip or crack during use, resulting in severe wear and tear, so it is not preferable (more than 1.5 g/cm'' is also not recommended. is not preferable because the heat capacity becomes large and the goal of cost reduction cannot be achieved.
前記粗粒子層３は、低温焼結型基板４との化学反応を起
こさない化学的に安定な組成の物質で構成され、また、
前記基板４の均一・な収縮率を得るために、真球に近い
形状と粒子径のそろった分布を持つ粒子群によって前記
基板４を多数の点接触で支持する構造とするのが良い。The coarse particle layer 3 is made of a substance with a chemically stable composition that does not cause a chemical reaction with the low temperature sintered substrate 4, and
In order to obtain a uniform shrinkage rate of the substrate 4, it is preferable to adopt a structure in which the substrate 4 is supported by a plurality of point contacts with a group of particles having a shape close to a perfect sphere and a uniform distribution of particle diameters.
具体的に１組成は、アルミナ、ムライト、ジルコニアが
好ましく、粒子径とその分布状態は、平均粒子径が２０
μｍ以上であり、最大粒子径と最小粒子径とが前記平均
粒子径の±２０％の範囲内に含まれることが好適である
。たとえば、重版の球状アルミナ微粉や粉砕用に用いら
れるアルミナボール、ムライトボール、ジルコニアボー
ル等が使用できる。平均粒子径が２０ＪＬｍ未満だと基
材あるいは前記中間結合層２と低温焼結型基板４との接
触が起こりやすくなって好ましくない。また、最大粒子
径と最小粒子径とが平均粒子径の±２０％を越える場合
には粗粒子層３表面の凹凸が大きくなって接触点の数が
少なくなり前記基板４の収縮率を均一にすることが不可
能となり好適ではない。Specifically, one composition is preferably alumina, mullite, and zirconia, and the particle size and distribution state are such that the average particle size is 20
It is preferable that the particle diameter is .mu.m or more, and that the maximum particle diameter and minimum particle diameter are within a range of ±20% of the average particle diameter. For example, reprinted spherical alumina fine powder, alumina balls used for pulverization, mullite balls, zirconia balls, etc. can be used. If the average particle diameter is less than 20 JLm, contact between the base material or the intermediate bonding layer 2 and the low-temperature sintered substrate 4 tends to occur, which is not preferable. Furthermore, if the maximum particle diameter and the minimum particle diameter exceed ±20% of the average particle diameter, the unevenness of the surface of the coarse particle layer 3 becomes large and the number of contact points decreases, so that the shrinkage rate of the substrate 4 can be made uniform. This is not suitable as it is impossible to do so.
前記中間結合層２は、無機ガラス質にて形成されるのが
良い、その理由は、前記粗粒子層３との接触面績が向上
し、その結果としての結合力が強固になるためである。The intermediate bonding layer 2 is preferably formed of an inorganic glass material, because the contact surface with the coarse particle layer 3 is improved and the bonding force is strengthened as a result. .
ここで、無機ガラス質は１２００°Ｃ以上の温度で軟化
するものであることが好適である。具体的には、白釉、
マット釉等の高温釉やフリット等が好ましい、前記軟化
温度が１２００℃未満だと実際の焼成温度、すなわち、
低温焼結型基板４を焼成する温度が８００〜１１００℃
で中間結合層２の軟化する怖れがあって前記粗粒子層３
が脱落する怖れがあるためである。また、前記中間結合
層２は、２０〜５００μｍの厚みで構成されていること
が好ましい。Here, it is preferable that the inorganic glass material softens at a temperature of 1200°C or higher. Specifically, white glaze,
High-temperature glazes such as matte glazes, frits, etc. are preferred; if the softening temperature is less than 1200°C, the actual firing temperature, i.e.
The temperature at which the low-temperature sintered substrate 4 is fired is 800 to 1100°C.
There is a risk that the intermediate bonding layer 2 will be softened and the coarse particle layer 3
This is because there is a risk of it falling off. Moreover, it is preferable that the intermediate bonding layer 2 has a thickness of 20 to 500 μm.
２０ｐｍ未満だと粗粒子層３を充分に結合てきず、５０
０ＩＬｍを越えると中間結合層２にクラックが生じやす
くなり、また表面に中間結合Ｂ２が露出しやすくなり粗
粒子層３の脱落や反応が起こるようになって好ましくな
い。If it is less than 20 pm, the coarse particle layer 3 will not be sufficiently bonded, and the
If it exceeds 0ILm, cracks are likely to occur in the intermediate bonding layer 2, and the intermediate bonding B2 is likely to be exposed on the surface, causing the coarse particle layer 3 to fall off and reactions to occur, which is not preferable.
本発明の低温焼結型基板焼成用治具は、以下の■又は■
の様な方法で製造される。The low-temperature sintering type substrate firing jig of the present invention has the following
It is manufactured by a method such as
■焼結体ｌに中間結合層２の原料スラリーをスプレーま
たは塗布してから焼成し、焼結体ｌの表面に中間結合層
２を形成させる。次に球状アルミナ、球状ムライト、球
状ジルコニアの中から選ばれるいずれか一種又は二種以
上を中間結合層２の上にまぶし、粗粒子層３を形成して
、再度焼成して製造する。(2) A raw material slurry for the intermediate bonding layer 2 is sprayed or applied onto the sintered body 1, and then fired to form the intermediate bonding layer 2 on the surface of the sintered body 1. Next, one or more selected from spherical alumina, spherical mullite, and spherical zirconia are sprinkled on the intermediate bonding layer 2 to form a coarse particle layer 3, which is then fired again.
■焼結体ｌの焼結前のものに■と同様に中間結合層２の
原料スラリーを塗布し、前記球状粒子をまぶして粗粒子
層３を形成してから一回の焼成で製造する。(2) The raw material slurry for the intermediate bonding layer 2 is applied to the sintered body 1 before sintering in the same manner as in (2), and the spherical particles are sprinkled thereon to form the coarse particle layer 3, and then the sintered body 1 is produced by one firing.
本発明の焼成用治具は低温焼結型基板に好適なものであ
るが、特に大型の基板を焼成する際に多大の効果を示す
ものであり、セラミック基板の大型化を実用可能とする
ものでもある。The firing jig of the present invention is suitable for low-temperature sintered substrates, and is especially effective when firing large-sized substrates, making it practical to increase the size of ceramic substrates. There is also.
以下、本発明の実施例について比較例と合わせて説明す
る。Examples of the present invention will be described below along with comparative examples.
（実施例）
実施例１
密度１．３ｇ／ｃゴ、常温での曲げ強度１３０ｋ ｇ
ｆ ／ ｃ ｒｎ”のムライト質焼結体に、シリカ・ア
ルミナ質を主体とし１２３０℃で軟化するガラスの原料
スラリーを塗布後、１４００℃で４時間焼成して焼結体
表面にガラス状中間結合層を形成させた。続いて、平均
粒子径６０ｐｍの球状アルミナ微粉（商品名ニアルナビ
ーズＣＢ−Ａｇｏ 昭和電工（株）製）を１ ｗ ｔ
％メチルセルロース水溶液に分散させたものを前記ガラ
ス状中間結合層表面に塗布して乾燥接着させ、再度１４
００℃で３時間焼成してムライト焼結体を基材とした焼
成用治具を製造した。(Example) Example 1 Density: 1.3 g/c, bending strength at room temperature: 130 kg
f / crn'' mullite sintered body is coated with a glass raw material slurry that is mainly composed of silica and alumina and softens at 1230°C, and then fired at 1400°C for 4 hours to form a glassy intermediate bond on the surface of the sintered body. A layer was formed.Subsequently, 1 wt of spherical alumina fine powder (trade name Nialuna Beads CB-Ago, manufactured by Showa Denko K.K.) with an average particle diameter of 60 pm was added.
% methyl cellulose aqueous solution was applied to the surface of the glassy intermediate bonding layer, dried and bonded, and then 14% aqueous solution was applied.
A firing jig having the mullite sintered body as a base material was manufactured by firing at 00°C for 3 hours.
アルミナとホウケイ酸ガラスとから成りＡｇ−Ｐｄペー
ストで回路を形成させた低温焼結型基板グリーンシート
を上記ムライト質焼成用治具に載せ９００℃で４時間焼
成後、付着の有無、粗粒子層の剥離の有無を観察後、回
路の断線の有無を顕微鏡にて観察したが、不良の発生は
なく良好な結果を示し、トータル８時間の焼成時間で製
造できた。A low-temperature sintered substrate green sheet made of alumina and borosilicate glass with a circuit formed with Ag-Pd paste was placed on the above-mentioned mullite baking jig and baked at 900°C for 4 hours. After observing the presence or absence of peeling, the presence or absence of circuit breakage was observed using a microscope, and no defects were observed, indicating good results, and the production was completed in a total firing time of 8 hours.
火ｍＮス
密度１．１ｇ／ｃｒｎ″、常温での曲げ強度１１０ｋ
ｇ ｆ ／ ｃゴの耐熱性熱ａ賀ｍ！ｉを主体とする成
形体に、実施例１と同様の方法でガラス状中間結合層を
形成させた。続いて、平均粒子径１１００ＩＬのアルミ
ナボール（商品名ニアルミナイトボール内外耐火工業（
株）ｌＪ）をｌ ｗ ｔ ％ Ｐ Ｖ Ａ水溶液に懸濁
させたものをガラス状中間結合層表面に塗布して乾燥接
着させ、実施例１と同様にして軽量の焼成用治具を製造
した。Fire mN density 1.1g/crn'', bending strength at room temperature 110k
gf/cgo's heat resistant heat agam! A glassy intermediate bonding layer was formed in the same manner as in Example 1 on a molded article mainly composed of i. Next, alumina balls with an average particle size of 1100IL (trade name: Nia Aluminite Ball Naigai Fireproof Industry) were used.
A light-weight baking jig was produced in the same manner as in Example 1 by applying a suspension of LJ) in an aqueous solution of lwt% PVA and applying it to the surface of the glassy intermediate bonding layer, drying and adhering it. .
実施例１と同様にして、反応、剥離、断線の有無を調べ
たが不良はなく良好な結果を示した。In the same manner as in Example 1, the presence or absence of reaction, peeling, and wire breakage was examined, and no defects were found, indicating good results.
比較例１
実施例１で用いたムライト質焼結体の表面に、平均粒径
２５ｐｍ（最大粒径４５ｐｍ）のアルミナボールを塗布
し、１４００℃で３時間焼成して、粗粒子層を結合させ
た。Comparative Example 1 Alumina balls with an average particle size of 25 pm (maximum particle size 45 pm) were applied to the surface of the mullite sintered body used in Example 1, and fired at 1400°C for 3 hours to bond the coarse particle layer. Ta.
実施例１および実施例２で用いたグリーンシートを載せ
た後、９００℃で４時間焼成した。焼成後、反応、剥離
はなかったが、回路の断線が６ケ所で発生していた。After placing the green sheet used in Example 1 and Example 2, it was baked at 900° C. for 4 hours. After firing, there was no reaction or peeling, but circuit breaks occurred at six locations.
反聚豊ユ
表面粗度Ｒ□、を１０ＩＬｍ以下に研摩したアルミナ質
平板の上に、上記グリーンシートを載せ９００℃で４時
間焼成した。トータルの焼成サイクルが１０時間以内の
ものは、アルミナ板が割れてしまい、１０時間を越える
ものについては、基板とアルミナ板との付着が生じ不良
となった。The above green sheet was placed on an alumina flat plate that had been polished to a surface roughness R□ of 10 ILm or less and fired at 900° C. for 4 hours. In cases where the total firing cycle was less than 10 hours, the alumina plate cracked, and in cases where the total firing cycle exceeded 10 hours, adhesion between the substrate and the alumina plate occurred, resulting in a defect.
（発明の効果） 以上のように、本発明の焼成用治具によれば。(Effect of the invention) As described above, according to the baking jig of the present invention.
低温焼結型基板を高速に、しかも高収率で焼成すること
がてきるものである。It is possible to sinter a low-temperature sintered substrate at high speed and with high yield.
第１図は本発明の焼成用治具の構造を模式的にあられし
た断面図である。
符 号 の 説 明
１−・・焼結体、２・・・中間結合層、３・・・粗粒子
層、４・・・低温焼結型基板。
（以 上）FIG. 1 is a sectional view schematically showing the structure of the firing jig of the present invention. Explanation of symbols 1--Sintered body, 2--Intermediate bonding layer, 3--Coarse particle layer, 4--Low temperature sintered substrate. (that's all)
Claims (1)
粒子径が２０μｍ以上であり、最大粒子径と最小粒子径
とが前記平均粒子径の±２０％の範囲内に含まれた粒径
分布を有する球状アルミナ、球状ムライト、球状ジルコ
ニアとから選ばれる少なくとも一種あるいは二種以上の
粗粒子層３とから成ることを特徴とする低温焼結型基板
焼成用治具。 ２）前記焼結体１は、その密度が０．６〜 １．５ｇ／ｃｍ＾３の範囲にあり、常温での曲げ強度が
５０〜１５０ｋｇｆ／ｃｍ＾２の範囲にあることを特徴
とする特許請求の範囲第１項記載の低温焼結型基板焼成
用治具。 ３）前記中間結合層２が、１２００℃以上の温度で軟化
する無機ガラス質から成り、２０〜５００μｍの厚みで
構成されていることを特徴とする特許請求の範囲第１項
又は第２項記載の低温焼結型基板焼成用治具。[Claims] 1) The sintered body 1 and the inorganic glass intermediate bonding layer 2 have an average particle size of 20 μm or more, and the maximum particle size and minimum particle size are ±20% of the average particle size. Low-temperature sintering type substrate for firing, characterized by comprising a coarse particle layer 3 of at least one or two or more selected from spherical alumina, spherical mullite, and spherical zirconia having a particle size distribution within the range of jig. 2) The sintered body 1 is characterized in that its density is in the range of 0.6 to 1.5 g/cm^3, and the bending strength at room temperature is in the range of 50 to 150 kgf/cm^2. A low-temperature sintering type substrate firing jig according to claim 1. 3) The intermediate bonding layer 2 is made of an inorganic glass material that softens at a temperature of 1200° C. or higher, and has a thickness of 20 to 500 μm. Low-temperature sintering type substrate firing jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27677387A JPH01119569A (en) | 1987-10-30 | 1987-10-30 | Sintering jig for low-temperature sintering substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27677387A JPH01119569A (en) | 1987-10-30 | 1987-10-30 | Sintering jig for low-temperature sintering substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01119569A true JPH01119569A (en) | 1989-05-11 |
Family
ID=17574156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27677387A Pending JPH01119569A (en) | 1987-10-30 | 1987-10-30 | Sintering jig for low-temperature sintering substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01119569A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006230728A (en) * | 2005-02-25 | 2006-09-07 | Yasuhisa Seo | Clasp |
-
1987
- 1987-10-30 JP JP27677387A patent/JPH01119569A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006230728A (en) * | 2005-02-25 | 2006-09-07 | Yasuhisa Seo | Clasp |
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