JPH01119048A - Transistor - Google Patents

Transistor

Info

Publication number
JPH01119048A
JPH01119048A JP62276819A JP27681987A JPH01119048A JP H01119048 A JPH01119048 A JP H01119048A JP 62276819 A JP62276819 A JP 62276819A JP 27681987 A JP27681987 A JP 27681987A JP H01119048 A JPH01119048 A JP H01119048A
Authority
JP
Japan
Prior art keywords
transistor
lead
temperature
chip
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62276819A
Other languages
Japanese (ja)
Inventor
Yukinori Sato
佐藤　之則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62276819A priority Critical patent/JPH01119048A/en
Publication of JPH01119048A publication Critical patent/JPH01119048A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Fuses (AREA)

Abstract

PURPOSE:To prevent smoking or burning of a transistor by constructing a built-in temperature fuse interposed between element wirings in a transistor body. CONSTITUTION:A transistor body comprises a chip 1 mounted in a mold cover which is formed on a base plate 6, an emitter lead 3, a collector lead 4, and a base lead 5 mounted on the cover, each lead and chip being internally connected by a bonding wire 2. Furthermore, a temperature fuse 8 is mounted in the mold cover 7, the fuse 8 being bonded to electrically connect between the internal elements and between the chip 1 and the emitter lead 3 to be conducted. If the radiation from the transistor is large due to abnormalities in the circuit in operation, the temperature fuse 8 is fused at a predetermined temperature, shutting the emitter current to flow, whereby any increase in the transistor temperature can be controlled within a predetermined value.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はトランジスタの内部構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the internal structure of a transistor.

〔従来の技術〕[Conventional technology]

従来のトランジスタは例えば第２図のように、ベースプ
レー１〜１６上のモールドカバー１７にチップ１１とボ
ンディングワイヤ１２を内蔵し、３本のり−ド１３，１
４，１５を組付けてこれがカバー１７より外部へ引出さ
れているものである。For example, as shown in FIG. 2, a conventional transistor has a chip 11 and bonding wires 12 built into a mold cover 17 on base plates 1 to 16, and three wires 13, 1.
4 and 15 are assembled and pulled out from the cover 17.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のトランジスタの構造では構成素子が規定
の温度で断線又は素子間がオープンとなるものではない
ので、トランジスタを使用している回路等に異常が生じ
トランジスタの発熱が大きくなった場合に、発煙あるい
は焼損するという欠点がある。In the conventional transistor structure described above, the constituent elements do not become disconnected or open between elements at a specified temperature, so if an abnormality occurs in the circuit using the transistor and the transistor generates a large amount of heat, It has the disadvantage of producing smoke or burning.

本発明の目的は上記欠点を解消したトランジスタの構造
を提供することにある。An object of the present invention is to provide a transistor structure that eliminates the above-mentioned drawbacks.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はトランジスタ本体に、素子の配線間に接続した
温度ヒユーズを有することを特徴とするトランジスタで
ある。The present invention is a transistor characterized in that the transistor body has a temperature fuse connected between the wirings of the element.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例を示す図である。実施例は第
２図の構造のトランジスタに本発明の構造を適用した例
を示しており、トランジスタ本体を構成するベースプレ
ート６上のモールドカバー７内にはチップ１が実装され
、またカバー７に組付けられたエミッタ用リード３、コ
レクタ用り一ド４及びベース用リード５を装備し、各リ
ードとチップ間はボンディングワイヤ２で内部接続され
ている点は従来と同じである。本発明は、さらにモール
ドカバー７内に温度ヒユーズ８を実装し、通電される内
部の素子間、実施例ではチップ１とエミッタリード３に
温度ヒユーズ８をボンディングしてこの間に電気的に接
続したものである。FIG. 1 is a diagram showing an embodiment of the present invention. The embodiment shows an example in which the structure of the present invention is applied to a transistor having the structure shown in FIG. The emitter lead 3, collector lead 4, and base lead 5 are provided, and each lead and the chip are internally connected by bonding wires 2, as in the conventional case. The present invention further includes a temperature fuse 8 mounted inside the mold cover 7, and electrically connected between the internal elements to be energized, by bonding the temperature fuse 8 to the chip 1 and the emitter lead 3 in the embodiment. It is.

もし、使用回路の異常等により、トランジスタの発熱が
大きくなった場合には、温度ヒユーズ８が規定の温度で
溶断し、エミッタ電流を遮断する。If the transistor generates a large amount of heat due to an abnormality in the circuit used, the temperature fuse 8 blows at a specified temperature, cutting off the emitter current.

従ってトランジスタの温度上昇を規定値以下に抑えるこ
とができる。Therefore, the temperature rise of the transistor can be suppressed to below a specified value.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によればトランジスタの本体
に素子の配線間に介装した温度ヒユーズを内蔵させたこ
とにより、トランジスタの発煙あるいは焼損事故を防止
できる効果がある。As described above, according to the present invention, by incorporating a temperature fuse interposed between the wirings of the element into the main body of the transistor, it is possible to prevent smoking or burnout of the transistor.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例の一部断面斜視図、第２図は
従来例の一部断面斜視図である。FIG. 1 is a partially sectional perspective view of an embodiment of the present invention, and FIG. 2 is a partially sectional perspective view of a conventional example.

Claims (1)

【特許請求の範囲】[Claims] （１）トランジスタ本体に、素子の配線間に接続した温
度ヒューズを有することを特徴とするトランジスタ。(1) A transistor characterized in that the transistor body has a thermal fuse connected between the wirings of the element.
JP62276819A 1987-10-31 1987-10-31 Transistor Pending JPH01119048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62276819A JPH01119048A (en) 1987-10-31 1987-10-31 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62276819A JPH01119048A (en) 1987-10-31 1987-10-31 Transistor

Publications (1)

Publication Number Publication Date
JPH01119048A true JPH01119048A (en) 1989-05-11

Family

ID=17574838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62276819A Pending JPH01119048A (en) 1987-10-31 1987-10-31 Transistor

Country Status (1)

Country Link
JP (1) JPH01119048A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241915A (en) * 2001-02-20 2002-08-28 Hitachi Metals Ltd Bearing unit in molten metal bath
KR100767923B1 (en) * 2000-03-14 2007-10-17 제이에프이 스틸 가부시키가이샤 Slide bearing device for roll immersed in continuous molten metal plating bath
US8047718B2 (en) 2005-12-23 2011-11-01 Posco Bearing device for roll of hot dipping bath in continuous hot dip coating line

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100767923B1 (en) * 2000-03-14 2007-10-17 제이에프이 스틸 가부시키가이샤 Slide bearing device for roll immersed in continuous molten metal plating bath
JP2002241915A (en) * 2001-02-20 2002-08-28 Hitachi Metals Ltd Bearing unit in molten metal bath
US8047718B2 (en) 2005-12-23 2011-11-01 Posco Bearing device for roll of hot dipping bath in continuous hot dip coating line

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