JPH01119019A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01119019A JPH01119019A JP27472387A JP27472387A JPH01119019A JP H01119019 A JPH01119019 A JP H01119019A JP 27472387 A JP27472387 A JP 27472387A JP 27472387 A JP27472387 A JP 27472387A JP H01119019 A JPH01119019 A JP H01119019A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- opening
- etching
- nitride film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000007743 anodising Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 7
- 229920005989 resin Polymers 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000008151 electrolyte solution Substances 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に半導体基板
の絶縁膜上に選択的に電極層を形成する際の特性の安定
化を図った半導体装置の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device with stable characteristics when selectively forming an electrode layer on an insulating film of a semiconductor substrate. The present invention relates to a method for manufacturing a device.
従来、半導体装置では半導体基板上に形成した絶縁膜に
開口部を設け、ここに電極層を形成して半導体基板に設
けた素子との電気的接続を図っているが、この絶縁膜に
開口部を開設する方法として、窒化膜の酸化膜化を利用
した方法が用いられている。この方法は、半導体基板上
に酸化膜及び窒化膜を積層して形成し、上層の窒化膜を
電解溶液中で選択的に酸化させ、しかる上で酸化膜のエ
ツチングを施すことにより、酸化膜化された窒化膜及び
下層の酸化膜を選択的に除去して開口部を開設する方法
である。Conventionally, in a semiconductor device, an opening is formed in an insulating film formed on a semiconductor substrate, and an electrode layer is formed therein for electrical connection with an element provided on the semiconductor substrate. As a method for opening a nitride film, a method using an oxide film is used. This method involves stacking an oxide film and a nitride film on a semiconductor substrate, selectively oxidizing the upper nitride film in an electrolytic solution, and then etching the oxide film. In this method, an opening is created by selectively removing the nitride film and the underlying oxide film.
上述した従来の方法は、該窒化膜を選択的に酸化膜化し
てこれをエツチング除去するのであるが、この際に下層
の酸化膜も同時に除去されてそのエツチングが横方向も
に進行されるため、完成される開口部が所望領域より広
く形成され易い。これは特性不良につながる要因となり
、歩留低下の原因となる。これを解決するためには、酸
化膜化された酸化膜と下層の酸化膜とを２回に分けてエ
ツチングし、両者間に段差を形成することにより下層の
酸化膜が横方向にエツチングされた場合でも広がり領域
をあらかじめ予定した量だけ残す方法が考えられる。し
かしながら、最初のエツチングを高精度に管理すること
が難しいために、下層の酸化膜を残す量にばらつきが生
じ易く、場合によっては半導体基板が露出し、開口部が
広くなることが避けられないという問題があった。In the conventional method described above, the nitride film is selectively converted into an oxide film and removed by etching, but at this time, the underlying oxide film is also removed at the same time, and the etching progresses laterally as well. , the completed opening is likely to be formed wider than the desired area. This becomes a factor that leads to poor characteristics and causes a decrease in yield. To solve this problem, the oxidized oxide film and the underlying oxide film were etched twice, and by forming a step between them, the underlying oxide film was etched laterally. Even in this case, a method can be considered to leave a predetermined amount of the spread area. However, because it is difficult to control the initial etching with high precision, the amount of the underlying oxide film left tends to vary, and in some cases, the semiconductor substrate is exposed and the opening becomes wider. There was a problem.
本発明は、開口部を高精度に開設でき、特性の改善及び
歩留りの向上を実現可能な半導体装置の製造方法を提供
することを目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that can form openings with high precision and improve characteristics and yield.
〔問題点を解決するための手段］
本発明の半導体装置の製造方法は、半導体基板上に形成
した酸化膜を電極形成領域において予め選択的に除去し
半導体基板が露呈された開口部を開設する工程と、この
開口部の周辺部分を更に選択的にエツチング処理してそ
の部分の酸化膜厚を均一状態に低減させる工程と、開口
部を含む全面に窒化膜を形成する工程と、この窒化膜に
対して陽極酸化処理を施して開口部内で半導体基板に接
触する部分の窒化膜を酸化膜に変質させる工程と、この
変質された酸化膜をエツチング除去して前記半導体基板
を露呈させる工程とを含んでいる。[Means for Solving the Problems] The method for manufacturing a semiconductor device of the present invention includes selectively removing an oxide film formed on a semiconductor substrate in an electrode formation region in advance to open an opening in which the semiconductor substrate is exposed. a step of further selectively etching the area around the opening to reduce the oxide film thickness in that area to a uniform state; a step of forming a nitride film on the entire surface including the opening; a step of anodizing the nitride film in the portion that contacts the semiconductor substrate within the opening to transform it into an oxide film; and a step of etching away the transformed oxide film to expose the semiconductor substrate. Contains.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図乃至第８図は本発明の一実施例を工程順に示す断
面図である。FIGS. 1 to 8 are cross-sectional views showing an embodiment of the present invention in the order of steps.
先ず、第１図に示すように所要の拡散領域２からなる素
子が形成された半導体基板１の表面に酸化膜３を形成す
る。そして、第２図に示すように前記酸化膜３上に所要
パターンに形成した感光性樹脂Ｎ４を形成し、これをマ
スクにして前記拡散領域２上の酸化膜３を一部エッチン
グし、開口部５を開設する。First, as shown in FIG. 1, an oxide film 3 is formed on the surface of a semiconductor substrate 1 on which a device consisting of a required diffusion region 2 is formed. Then, as shown in FIG. 2, a photosensitive resin N4 is formed in a desired pattern on the oxide film 3, and using this as a mask, a portion of the oxide film 3 on the diffusion region 2 is etched to form an opening. 5 will be established.
次いで、第３図のように前記開口部５を含む領域を開口
するようにパターン形成した感光性樹脂層６を形成する
。。そして、第４図のようにこの感光性樹脂層６をマス
クにしたドライエツチングにより前記酸化膜３の開口部
５の周辺部を半導体基板１より１０００人程度人程エツ
チング除去する。Next, as shown in FIG. 3, a photosensitive resin layer 6 is formed which is patterned so as to open the area including the opening 5. . Then, as shown in FIG. 4, by dry etching using the photosensitive resin layer 6 as a mask, the periphery of the opening 5 of the oxide film 3 is etched away from the semiconductor substrate 1 by about 1000 layers.
次に、第５図のように全面に１０００人程度０厚さの窒
化膜７を形成し、その後電解溶液（本実施例ではエチレ
ングリコールとホウ酸アンモニウムの混合液使用）中で
陽極酸化処理することにより、第６図のように前記窒化
膜は開口部５において半導体基板１に接触されている領
域のみが酸化され、酸化膜８に変質される。Next, as shown in Fig. 5, a nitride film 7 with a thickness of about 1,000 layers is formed on the entire surface, and then anodized in an electrolytic solution (in this example, a mixture of ethylene glycol and ammonium borate is used). As a result, as shown in FIG. 6, only the region of the nitride film that is in contact with the semiconductor substrate 1 at the opening 5 is oxidized and transformed into an oxide film 8.
しかる後、酸化膜エツチング処理を施すことにより、第
７図に示すように前記酸化膜に変質された領域の元窒化
膜が除去され、この部分の半導体基板１が露呈される。Thereafter, by performing an oxide film etching process, the original nitride film in the region transformed into the oxide film is removed, as shown in FIG. 7, and the semiconductor substrate 1 in this region is exposed.
その後、開口部５を含むようにアルミニウム等の電極層
９を形成する。Thereafter, an electrode layer 9 made of aluminum or the like is formed so as to include the opening 5 .
したがってこの方法によれば、酸化膜を予め開口した上
で、更にこの開口部の周辺部分に対してエツチングを施
してその周辺部分の膜厚を低減させているので、この周
辺部分にお５ける膜厚を再現性良くしかも好適に管理す
ることが可能となる。Therefore, according to this method, after the oxide film is opened in advance, the surrounding area of this opening is further etched to reduce the film thickness of the surrounding area. It becomes possible to control the film thickness with good reproducibility and in a suitable manner.
このため、この上に形成した窒化膜が変質された酸化膜
をエツチング除去する際に生じる横方向のエツチングを
殆ど零にでき、開口部の寸法を最初にエツチング形成し
た開口部の寸法に高精度に形成することが可能となる。For this reason, the lateral etching that occurs when etching away the oxide film whose quality has been altered by the nitride film formed on the nitride film can be almost eliminated, and the dimensions of the opening can be precisely matched to the dimensions of the opening that was initially formed by etching. It becomes possible to form
これにより、半導体装置における電極の再現性を向上し
、特性の改善及び歩留りの向上が実現できる。Thereby, it is possible to improve the reproducibility of electrodes in a semiconductor device, improve characteristics, and improve yield.
以上説明したように本発明は、半導体基板に形成した酸
化膜に開口部を設けた上で、この開口部の周辺部分を更
に選択的にエツチング処理してその部分の酸化膜厚を均
一状態に低減させ、しかる上で全面に窒化膜を形成しか
つこれを陽極酸化して酸化膜に変質させた上でエツチン
グ除去しているので、変質された酸化膜のエツチングに
際しての横方向のエツチングを抑制して高精度の開口部
を形成でき、半導体装置における電極の再現性を向上し
かつ歩留を向上できる効果がある。As explained above, the present invention provides an opening in an oxide film formed on a semiconductor substrate, and then selectively etches the area around the opening to make the oxide film thickness uniform in that area. After that, a nitride film is formed on the entire surface, and this is anodized to transform it into an oxide film, which is then etched away, thereby suppressing lateral etching when etching the modified oxide film. It is possible to form highly accurate openings, and this has the effect of improving the reproducibility of electrodes in semiconductor devices and improving yield.
第１図乃至第８図は本発明の一実施例を工程順に示す断
面図である。
■・・・半導体基板、２・・・拡散領域、３・・・酸化
膜、４・・・感光性樹脂層、５・・・開口部、６・・・
感光性樹脂層、７・・・窒化膜、８・・・酸化膜、９・
・・電極。
第４図1 to 8 are cross-sectional views showing an embodiment of the present invention in the order of steps. ■... Semiconductor substrate, 2... Diffusion region, 3... Oxide film, 4... Photosensitive resin layer, 5... Opening, 6...
photosensitive resin layer, 7... nitride film, 8... oxide film, 9.
··electrode. Figure 4
Claims (1)
おいて予め選択的に除去し半導体基板が露呈された開口
部を開設する工程と、この開口部の周辺部分を更に選択
的にエッチング処理してその部分の酸化膜厚を均一状態
に低減させる工程と、開口部を含む全面に窒化膜を形成
する工程と、この窒化膜に対して陽極酸化処理を施して
開口部内で半導体基板に接触する部分の窒化膜を酸化膜
に変質させる工程と、この変質された酸化膜をエッチン
グ除去して前記半導体基板を露呈させる工程とを含むこ
とを特徴とする半導体装置の製造方法。(1) A step in which the oxide film formed on the semiconductor substrate is selectively removed in advance in the electrode formation region to create an opening where the semiconductor substrate is exposed, and the surrounding area of this opening is further selectively etched. a step of reducing the thickness of the oxide film in that area to a uniform state, a step of forming a nitride film over the entire surface including the opening, and anodizing the nitride film to contact the semiconductor substrate within the opening. 1. A method of manufacturing a semiconductor device, comprising the steps of transforming a portion of a nitride film into an oxide film, and etching away the transformed oxide film to expose the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27472387A JPH01119019A (en) | 1987-10-31 | 1987-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27472387A JPH01119019A (en) | 1987-10-31 | 1987-10-31 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01119019A true JPH01119019A (en) | 1989-05-11 |
Family
ID=17545674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27472387A Pending JPH01119019A (en) | 1987-10-31 | 1987-10-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01119019A (en) |
-
1987
- 1987-10-31 JP JP27472387A patent/JPH01119019A/en active Pending
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