JPH01118127A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH01118127A JPH01118127A JP62274670A JP27467087A JPH01118127A JP H01118127 A JPH01118127 A JP H01118127A JP 62274670 A JP62274670 A JP 62274670A JP 27467087 A JP27467087 A JP 27467087A JP H01118127 A JPH01118127 A JP H01118127A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- halogen
- layer
- layer resist
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 16
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 12
- 150000002367 halogens Chemical class 0.000 claims abstract description 12
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 7
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920000058 polyacrylate Polymers 0.000 claims abstract description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 239000011630 iodine Substances 0.000 claims description 5
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 6
- 125000005843 halogen group Chemical group 0.000 abstract description 3
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 238000010894 electron beam technology Methods 0.000 description 10
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- IQHSSYROJYPFDV-UHFFFAOYSA-N 2-bromo-1,3-dichloro-5-(trifluoromethyl)benzene Chemical group FC(F)(F)C1=CC(Cl)=C(Br)C(Cl)=C1 IQHSSYROJYPFDV-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CWBLKOLBEWWCOP-UHFFFAOYSA-N 2-methylprop-2-enoic acid;phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(O)=O.CC(=C)C(=O)OC1=CC=CC=C1 CWBLKOLBEWWCOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polydiphenylsiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
電子ビームリソグラフィを用いた多層レジストプロセス
によりレジストパターンを形成する方法に関し、
チャージアップを防止しかつ低温での処理を可能とする
ことを目的とし、
下層レジストとして、弗素、臭素及び沃素からなる群か
ら選ばれた少くとも１種のハロゲンを分子中に含有する
材料を使用するように、構成する。[Detailed Description of the Invention] [Summary] Regarding a method of forming a resist pattern by a multilayer resist process using electron beam lithography, the present invention aims to prevent charge-up and enable processing at low temperatures. The material is configured to use a material containing in its molecule at least one halogen selected from the group consisting of fluorine, bromine, and iodine.
本発明はパターン形成方法に関し、さらに詳しく述べる
と、電子ビームリソグラフィを用いた多層レジストプロ
セスによりレジストパターンを形成する方法に関する。The present invention relates to a pattern forming method, and more specifically, to a method of forming a resist pattern by a multilayer resist process using electron beam lithography.
本発明方法は、例えば集積回路、バブルメモリー素子等
の半導体装置、その他の製造において有利に使用するこ
とができる。The method of the present invention can be advantageously used, for example, in the production of integrated circuits, semiconductor devices such as bubble memory devices, and other products.
半導体装置等の製造において、高度に微細なレジストパ
ターンを形成するために、電子ビームリソグラフィと多
層レジストプロセスの組み合せが積極的に用いられてい
ることは周知の通りである。2. Description of the Related Art As is well known, in the manufacture of semiconductor devices and the like, a combination of electron beam lithography and multilayer resist process is actively used to form highly fine resist patterns.
かかる多層レジストプロセスでは、通常、耐ドライエツ
チング性の大きな下層レジストと電子ビーム露光に感度
を有する上層レジストからなる二層構造レジスト、二層
構造レジストの下層と上層の間に中間層を介在せしめた
三層構造レジストなどが用いられている。二層構造レジ
ストを用いた例で説明すると、基板上に例えばノボラッ
ク系のレジスト材料、例えば東京応化（株）製の０ＦＰ
Ｒ系レジストを塗布して下層レジストを形成する。この
下層レジストは、上層レジスト塗布時の溶解を防止する
ために、２００℃前後の高温度での熱処理により不溶化
させておくのが一般的である。引き続いて、この下層レ
ジスト上に例えばシリコーン系のレジスト材料、例えば
シリル化ポリメチルシルセスキオキサン（ＰＭＳＳ）を
塗布して上層レジストを形成する。レジスト膜の形成が
完了した後、上層レジストを電子ビーム露光によってパ
ターニングし、現像す多。次いで、得られた上層レジス
トパターンをマスクとして、下層レジストを酸素プラズ
マでエツチングする。微細な上層レジストパターンがそ
のま＼下層レジストに転写されることの結果、微細で厚
膜な、すなわち、高アスペクト比のレジストパターンが
最終的に得られる。このように、レジストに必要とされ
る機能を二層もしくはそれ以上のレジストに分離しても
たせると、単層レジストで屡々問題となった下地段差の
問題や解像性及び耐ドライエツチング性の問題を解決す
ることができる。In such a multilayer resist process, a two-layer resist is usually formed, consisting of a lower resist with high dry etching resistance and an upper resist that is sensitive to electron beam exposure, and an intermediate layer is interposed between the lower and upper layers of the two-layer resist. A three-layer resist is used. To explain with an example using a two-layer structure resist, for example, a novolak resist material, such as 0FP manufactured by Tokyo Ohka Co., Ltd., is placed on the substrate.
An R-based resist is applied to form a lower resist. This lower resist layer is generally insolubilized by heat treatment at a high temperature of about 200° C. in order to prevent it from dissolving when the upper resist layer is applied. Subsequently, a silicone-based resist material, such as silylated polymethylsilsesquioxane (PMSS), for example, is applied onto the lower resist to form an upper resist. After the formation of the resist film is completed, the upper resist layer is patterned by electron beam exposure and developed. Next, using the obtained upper layer resist pattern as a mask, the lower layer resist is etched with oxygen plasma. As a result of the fine upper layer resist pattern being directly transferred to the lower layer resist, a fine and thick resist pattern, that is, a high aspect ratio resist pattern is finally obtained. In this way, if the functions required for the resist are provided by separating them into two or more layers of resist, problems such as the difference in base level, resolution, and dry etching resistance that often occur with single-layer resists can be solved. can be solved.
ところで、電子ビーム露光により上層レジストや中間レ
ジストのパターニングを行った場合には、レジストの帯
電（チャージアップ）現象が新たな問題として発生する
。すなわち、上記したようなノボラック系のレジスト材
料等に電子ビームを照射してパターニングを行う際には
、照射されたビームの電荷がレジスト膜に残存し、新た
に照射されてくるビームに斥力を与える結果、電子ビー
ムが曲げられ、位置合せマーク検出の不良や重ね合せの
ズレ、パターンの位置ズレ等が生じる。By the way, when patterning an upper layer resist or an intermediate resist by electron beam exposure, a new problem arises in which the resist is charged (charge-up). In other words, when patterning is performed by irradiating a novolak resist material such as the one described above with an electron beam, the charge of the irradiated beam remains on the resist film and provides a repulsive force to the newly irradiated beam. As a result, the electron beam is bent, resulting in poor alignment mark detection, misalignment of the alignment marks, misalignment of the pattern, and the like.
パターンの精度低下をひきおこすチャージアップを防止
するために、現在いくつかの方法が提案されている。例
えば、研究実用化報告第３３巻第４号（１９８４）、Ｐ
、 ６５５−６６３には、チャージアップ防止技術とし
て、下層レジスト上に導電性金属であるモリブデン（Ｍ
ｏ）を蒸着し、■０蒸着層上に上層レジストを形成する
ことが提案されている。また、８４年秋季応物学会、１
２ｐ −Ｔ−１２には、フェニルメタクリレート−メタ
クリル酸共重合体レジスト上にアルミニウム（／ｌ ）
を蒸着することが提案されている。しかし、このように
金属の蒸着を行うことには工程の複雑さがあり、また、
金属が層間にあることにより、電子の透過率が低くなる
ので位置合せマークの検出が困難になる。さらにまた、
８６年秋季応物学会、Ｉｐ−Ｚ−１３には、三層レジス
トの下層の０ＦＰＲ−８００（東京応化（株）製のノボ
ラック系レジスト）上に導電性ＩＴＯ膜を形成すること
が、そして同ｉ ｐ−Ｚ−ＩＯには、導電性カーボン膜
を二層レジストの下層に用いることが、それぞれ提案さ
れている。しかし、このように塗布導電膜を中間層に用
いる方法や導電性カーボン膜を用いる方法では、約３０
０℃以上の高温度で処理を行うことが必須であって、そ
れに原因するところの、基板へのダメージといった不都
合が発生する。さらに、中間層塗布型導電膜では、必ず
三層以上の層構成としなければならない、下層レジスト
についても高温処理が必要であり、膜の除去が困難であ
る、といった不都合が存在し、一方、導電性カーボン膜
では成膜の複雑さが存在する。Several methods are currently being proposed to prevent charge-up that causes a decrease in pattern accuracy. For example, Research and Practical Application Report Vol. 33, No. 4 (1984), P.
, 655-663, a conductive metal, molybdenum (M
It has been proposed to deposit o) and form an upper resist layer on the 0 vapor deposited layer. In addition, 1984 Autumn Society of Applied Physics, 1
2p-T-12 has aluminum (/l) on phenyl methacrylate-methacrylic acid copolymer resist.
It has been proposed to deposit However, performing metal vapor deposition in this way has a complicated process, and
The presence of metal between the layers reduces electron transmission, making it difficult to detect alignment marks. Furthermore,
At the 1986 Autumn Chemical Science Conference, Ip-Z-13, it was proposed that a conductive ITO film be formed on 0FPR-800 (novolac resist manufactured by Tokyo Ohka Co., Ltd.), which is the lower layer of the three-layer resist, and that the same i For p-Z-IO, it has been proposed to use a conductive carbon film as a lower layer of a two-layer resist. However, with the method of using a coated conductive film as an intermediate layer or the method of using a conductive carbon film, the
It is essential to perform the processing at a high temperature of 0° C. or higher, which causes disadvantages such as damage to the substrate. Furthermore, the intermediate layer coating type conductive film has disadvantages such as the layer structure must be three or more layers, the lower resist layer also requires high-temperature treatment, and the film is difficult to remove. However, in the case of carbon films, there are complications in film formation.
本発明の目的は、従来の技術の項において説明したよう
な問題点を解決して、電子ビームリソグラフィを用いた
多層レジストプロセスにおいて、チャージアップを防止
しかつ低温での処理を可能とすることにある。An object of the present invention is to solve the problems described in the prior art section, and to prevent charge-up and enable low-temperature processing in a multilayer resist process using electron beam lithography. be.
本発明者らは、電子ビームリソグラフィを用いた多層レ
ジストプロセスによりレジストパターンを形成するに当
って、下層レジストとして、弗素、臭素及び沃素からな
る群から選ばれた少くとも１種のハロゲンを分子中に含
有する材料を使用することによって、上記した目的を達
成し得るということを見い出した。In forming a resist pattern by a multilayer resist process using electron beam lithography, the present inventors used at least one halogen selected from the group consisting of fluorine, bromine, and iodine in the molecule as a lower layer resist. It has been found that the above-mentioned object can be achieved by using a material containing .
本発明の実施において下層レジストとして使用するハロ
ゲン含有材料は、それが下層レジストに必須の特性、例
えば耐ドライエツチング性等を有する限りにおいて特に
限定されるものではない。The halogen-containing material used as the lower resist in the practice of the present invention is not particularly limited as long as it has properties essential to the lower resist, such as dry etching resistance.
有用なハロゲン含有材料としては、ハロゲン置換された
重合体、例えばアクリル重合体、スチレン重合体等、例
えばポリ−２，３−ジブロモアクリレート、ポリへキサ
フルオロブチルメタクリレート、四ヨード化ポリスチレ
ン、４−ブロモポリスチレン、ポリテトラフルオロプロ
ピルメタクリレートなどをあげることができる。これら
のハロゲン含有材料は、例えばスピンコード法のような
常用の手法を用いて下地上に塗布し、焼付けして下層レ
ジストとなすことができる。Useful halogen-containing materials include halogen-substituted polymers such as acrylic polymers, styrene polymers, etc., such as poly-2,3-dibromoacrylate, polyhexafluorobutyl methacrylate, tetraiodinated polystyrene, 4-bromo Examples include polystyrene and polytetrafluoropropyl methacrylate. These halogen-containing materials can be applied onto a substrate using conventional techniques, such as spin-coding, and baked to form the underlying resist.
下層レジスト上に形成されるべきレジスト膜は、多層レ
ジストプロセスにおいて通常用いられている中間レジス
ト、上層レジストであることができる。・例えば、二層
レジストの場合の上層レジストとしては、シリル化ポリ
メチルシルセスキオキサン（ＰＭＳＳ） 、クロロメチ
ル化ポリジフェニルシロキサン、その他をあげることが
できる。これらの上層レジストは、電子ビーム露光に対
する感度ばかりでなく、Ｘ線、遠紫外線、イオンビーム
等の露光に対しても感度を有し、したがって、本願明細
書では、“電子ビーム”とは、広く電離放射線を指すこ
とを理解されたい。The resist film to be formed on the lower layer resist can be an intermediate resist or an upper layer resist that is commonly used in a multilayer resist process. - For example, in the case of a two-layer resist, examples of the upper resist include silylated polymethylsilsesquioxane (PMSS), chloromethylated polydiphenylsiloxane, and others. These upper layer resists have sensitivity not only to electron beam exposure but also to exposure to X-rays, deep ultraviolet rays, ion beams, etc. Therefore, in this specification, "electron beam" is used broadly. Please understand that it refers to ionizing radiation.
本発明を三層レジストに適用する場合には、中間レジス
トとして酸化珪素（Ｓｉ０２）膜等を、また、上層レジ
ストとして前記二層レジストの場合と同じものを、それ
ぞれ有利に使用することができる。When the present invention is applied to a three-layer resist, a silicon oxide (Si02) film or the like can be advantageously used as the intermediate resist, and the same one as in the case of the two-layer resist can be used as the upper resist.
本発明によるパターン形成方法においては、下層レジス
トとして用いられるハロゲン含有材料のハロゲン、すな
わち、弗素、臭素及び沃素の作用が重要である。これら
のハロゲン原子がチャージアップの防止等にいかに作用
するのか、その正確なメカニズムは判明していないけれ
ども、本発明者らの今までの研究の成果から、弗素、臭
素及び沃素の存在によりイオン伝導性をもたせることが
でき、これがチャージアップの防止作用として働いてい
るものと考えられる。In the pattern forming method according to the present invention, the effects of halogen, ie, fluorine, bromine, and iodine in the halogen-containing material used as the lower resist layer are important. Although the exact mechanism by which these halogen atoms act to prevent charge-up is unknown, the results of the present inventors' research to date indicate that the presence of fluorine, bromine, and iodine increases ionic conduction. This is thought to work as a charge-up prevention effect.
汎±
Ｐ−ＤＢＡ（ポリ−２，３−ジブロモアリルアクリレー
ト）のトルエン溶液をアルミニウム基板上に２．０μの
厚さに塗布し、１００℃で２０分間ベークした。このＰ
−ＤＢＡ膜に遠紫外線（Ｘｅ−Ｈｇランプ、５００ Ｗ
）を４０秒間照射した。引き続いて、末端ヒドロキシ
ル基をトリメチルクロロシランでシリル化したシリル化
ポリメチルシルセスキオキサン（ＰＭＳＳ）のジ−ｎ−
ブチルエーテル溶液を先に形成したＰ−ＤＢＡ膜上に０
．２ＩＩＴａの厚さに塗布し、８０℃で２０分間ベータ
した。目的とする二層レジストが得られた。A toluene solution of poly-P-DBA (poly-2,3-dibromoallyl acrylate) was applied to a thickness of 2.0 μm on an aluminum substrate and baked at 100° C. for 20 minutes. This P
- DBA film was exposed to far ultraviolet light (Xe-Hg lamp, 500 W
) was irradiated for 40 seconds. Subsequently, di-n-silylated polymethylsilsesquioxane (PMSS) whose terminal hydroxyl group was silylated with trimethylchlorosilane was used.
A butyl ether solution was applied to the P-DBA film formed earlier.
．． It was coated to a thickness of 2IITa and betaed for 20 minutes at 80°C. The desired two-layer resist was obtained.
次いで、得られた二層レジスト付きのアルミニウム基板
を電子ビーム露光装置に収容し、加速電圧２０ｋＶ及び
露光ｆｆ１２ Ｘ １０−’Ｃ／ｃｄで所定のパターン
で電子ビーム露光を行った。露光の完了後、基板をＭｉ
ＢＫ （メチルイソブチルケトン）中に１分間浸漬して
現像を行い、さらにＩＰＡ（イソプロピルアルコール）
中に３０秒間浸漬してすすぎを行った。Next, the obtained aluminum substrate with the two-layer resist was placed in an electron beam exposure apparatus, and electron beam exposure was performed in a predetermined pattern at an accelerating voltage of 20 kV and an exposure rate of ff12 x 10-'C/cd. After the exposure is completed, the substrate is
Develop by immersing in BK (methyl isobutyl ketone) for 1 minute, and then develop with IPA (isopropyl alcohol).
It was rinsed by immersing it in water for 30 seconds.
次いで、上層レジスト現像後のアルミニウム基板をプラ
ズマエツチング装置（ｒｆパワー： ３００ Ｗ、Ｏｚ
： １０１００５ｃ、圧カニ ０．０２Ｔｏｒｒ
）に収容し、残留せる上層レジスト（ＰＭＳＳ）のパタ
ーンをマスクとしてかつカーボンターゲットを用いて、
酸素プラズマで下層レジスト（Ｐ−ＤＢＡ）をエツチン
グした。Next, the aluminum substrate after developing the upper resist layer was subjected to plasma etching equipment (RF power: 300 W, Oz
: 101005c, pressure crab 0.02Torr
) and using the remaining upper layer resist (PMSS) pattern as a mask and a carbon target,
The lower resist layer (P-DBA) was etched with oxygen plasma.
エツチングの結果として、上層レジストパターンがその
ま＼下層レジストに転写され、０．３１ライン＆スペー
スのレジストパターンが形成された。As a result of etching, the upper resist pattern was directly transferred to the lower resist, forming a resist pattern of 0.31 lines and spaces.
この時のチャージアップ量は０．１μ以内であった。The charge-up amount at this time was within 0.1μ.
劃」工
前記例１に記載の手法を繰り返した。但し、本例の場合
、下層レジストとして、Ｐ−ＤＢＡに代えてＦＢＭ （
ポリへキサフルオロブチルメタクリレート）を使用し、
このＦＢＭのメチルイソブチルケトン溶液をアルミニウ
ム基板上に２．０μの厚さに塗布し、１７０℃で２０分
間ベータした。また、本例の場合、上層レジスト（ＰＭ
ＳＳ）の現像のために、電子ビーム露光後の基板をＩＰ
Ａ中に１分間浸漬して現像を行い、さらにアセトニトリ
ル中に３０秒間浸漬してすすぎを行った。酸素プラズマ
を用いたエツチングの後、０．３ｎライン＆スペースの
レジストパターンが形成された。この時のチャージアッ
プ量も、前記例１の場合と同様、０．１ｐｍ以内であっ
た。The procedure described in Example 1 above was repeated. However, in this example, FBM (
using polyhexafluorobutyl methacrylate),
This solution of FBM in methyl isobutyl ketone was coated on an aluminum substrate to a thickness of 2.0 μm, and was incubated at 170° C. for 20 minutes. In addition, in the case of this example, the upper layer resist (PM
For development of SS), the substrate after electron beam exposure is subjected to IP
It was immersed in A for 1 minute for development, and further immersed in acetonitrile for 30 seconds for rinsing. After etching using oxygen plasma, a resist pattern of 0.3n lines and spaces was formed. The charge-up amount at this time was also within 0.1 pm, as in the case of Example 1 above.
貫ユ
前記例１に記載の手法を繰り返した。但し、本例の場合
、下層レジストとして、Ｐ−ＤＢＡに代えて四ヨード化
ポリスチレンを使用した。酸素プラズマを用いたエツチ
ングの後、０．３趨ライン＆スペースのレジストパター
ンが形成された。この時のチャージアップ量も、前記例
１の場合と同様、０．１μ以内であった。The procedure described in Example 1 above was repeated. However, in this example, tetraiodinated polystyrene was used instead of P-DBA as the lower resist. After etching using oxygen plasma, a resist pattern of 0.3 lines and spaces was formed. The charge-up amount at this time was also within 0.1 μ, similar to the case of Example 1 above.
■↓」止較班し
前記例１に記載の手法を繰り返した。但し、本例の場合
、下層レジストとして、Ｐ−ＤＢＡに代えて０ＦＰＲ−
８００（ノボラック系レジスト、商品名）を使用し、こ
の０ＦＰＲ−８００のエチルセロソルブアセテート溶液
をアルミニウム基板上に２．０−の厚さに塗布し、２５
０℃で１時間ベータした。酸素プラズマを用いたエツチ
ングの後、０．３１Ｒａライン＆スペースルジストパタ
ーンが形成された。この時のチャージアップ量は２．４
−であった。■↓'' Stop comparison group and repeat the procedure described in Example 1 above. However, in this example, 0FPR- was used instead of P-DBA as the lower resist.
800 (novolak resist, trade name), apply this 0FPR-800 ethyl cellosolve acetate solution on an aluminum substrate to a thickness of 2.0 mm.
Beta for 1 hour at 0°C. After etching using oxygen plasma, a 0.31 Ra line and space resist pattern was formed. The charge up amount at this time is 2.4
-It was.
本発明によれば、多層レジストプロセスによるパターン
形成において、チャージアップを防止し、よって、高精
度のパターンを形成することができ、また、低温での処
理が可能となるので、作業性を著しく高めることができ
る。According to the present invention, in pattern formation using a multilayer resist process, charge-up can be prevented, a highly accurate pattern can be formed, and processing can be performed at low temperatures, thereby significantly improving workability. be able to.
Claims (1)
セスによりレジストパターンを形成する方法であって、
下層レジストとして、弗素、臭素及び沃素からなる群か
ら選ばれた少くとも１種のハロゲンを分子中に含有する
材料を使用することを特徴とするパターン形成方法。 ２、前記ハロゲン含有材料がハロゲン置換された重合体
である、特許請求の範囲第１項に記載のパターン形成方
法。 ３、前記重合体がアクリル重合体である、特許請求の範
囲第２項に記載のパターン形成方法。 ４、前記重合体がスチレン重合体である、特許請求の範
囲第２項に記載のパターン形成方法。[Claims] 1. A method for forming a resist pattern by a multilayer resist process using electron beam lithography, comprising:
A pattern forming method characterized in that a material containing at least one halogen selected from the group consisting of fluorine, bromine and iodine in its molecule is used as the lower resist. 2. The pattern forming method according to claim 1, wherein the halogen-containing material is a halogen-substituted polymer. 3. The pattern forming method according to claim 2, wherein the polymer is an acrylic polymer. 4. The pattern forming method according to claim 2, wherein the polymer is a styrene polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274670A JPH01118127A (en) | 1987-10-31 | 1987-10-31 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274670A JPH01118127A (en) | 1987-10-31 | 1987-10-31 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01118127A true JPH01118127A (en) | 1989-05-10 |
Family
ID=17544923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62274670A Pending JPH01118127A (en) | 1987-10-31 | 1987-10-31 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01118127A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593058B1 (en) | 1998-09-23 | 2003-07-15 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| EP1790703A3 (en) * | 1998-04-24 | 2009-08-12 | JGC Catalysts and Chemicals Ltd. | Coating liquid for forming silica-based film having low dielectric constant and substrate having film of low dielectric constant coated thereon |
| US20100081081A1 (en) * | 2007-02-27 | 2010-04-01 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for electron beam lithography |
| JP2012125140A (en) * | 2010-12-07 | 2012-06-28 | Industry-Academic Cooperation Foundation Yonsei Univ | Multilayer electroactive polymer device and manufacturing method thereof |
-
1987
- 1987-10-31 JP JP62274670A patent/JPH01118127A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1790703A3 (en) * | 1998-04-24 | 2009-08-12 | JGC Catalysts and Chemicals Ltd. | Coating liquid for forming silica-based film having low dielectric constant and substrate having film of low dielectric constant coated thereon |
| US6593058B1 (en) | 1998-09-23 | 2003-07-15 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US7276323B2 (en) | 1998-09-23 | 2007-10-02 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US20100081081A1 (en) * | 2007-02-27 | 2010-04-01 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for electron beam lithography |
| US8603731B2 (en) * | 2007-02-27 | 2013-12-10 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for electron beam lithography |
| JP2012125140A (en) * | 2010-12-07 | 2012-06-28 | Industry-Academic Cooperation Foundation Yonsei Univ | Multilayer electroactive polymer device and manufacturing method thereof |
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