JPH01114041A - Forming method for fine pattern - Google Patents
Forming method for fine patternInfo
- Publication number
- JPH01114041A JPH01114041A JP27222487A JP27222487A JPH01114041A JP H01114041 A JPH01114041 A JP H01114041A JP 27222487 A JP27222487 A JP 27222487A JP 27222487 A JP27222487 A JP 27222487A JP H01114041 A JPH01114041 A JP H01114041A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- oxide film
- silicon oxide
- resist
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板上での微細パタン形成方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming fine patterns on a semiconductor substrate.
従来の微細パタン形成方法は光露光法により行われてい
る。光露光技術の中でも、単波長光を用いるステッパー
を使う方法が広く実用に供されている。波長としてはｇ
線である４３８ｎｍか、ｉ線の３６５ｎｍが用いられて
いるが、その解像力は０．６〜０．７μｍ程度である。A conventional method for forming fine patterns is a light exposure method. Among optical exposure techniques, a method using a stepper that uses single-wavelength light is widely used in practice. The wavelength is g
Either the 438 nm line or the 365 nm i line is used, and their resolution is about 0.6 to 0.7 μm.
さらに微細なパタンを形成する方法としてエキシマレー
ザ−光を用いる方法や、Ｘ線露光法や電子ビーム露光法
があるが、現在まだ研究段階にある。Methods for forming even finer patterns include a method using excimer laser light, an X-ray exposure method, and an electron beam exposure method, but these methods are still in the research stage.
上述した従来のステッパー技術では０．５μｍからそれ
以下の微細パタンを形成するのは不可能である。しかし
ながらこのような微細なパタンか再現性良く実用レベル
で形成できれば超ＬＳＩデバイスの高密度化のために、
この効果は極めて大きい。With the conventional stepper technology described above, it is impossible to form fine patterns from 0.5 μm to less than 0.5 μm. However, if such fine patterns can be formed at a practical level with good reproducibility, it will be possible to increase the density of VLSI devices.
This effect is extremely large.
本発明の微細パタン形成法は、半導体基板上に所定パタ
ンの酸化シリコン膜を形成する工程と、この酸化シリコ
ン膜に等方性エツチングを施してパタンを微細化する工
程と、前記微細化された酸化シリコン膜、パタンの形成
された基板上にレジストを塗布する工程と、前記レジス
トを酸化シリコン膜の上面が露出するまでエッチバック
する工程と、酸化シリコン膜をエツチング除去すること
により微細な開口を有するレジストパタンを得る工程と
を有している。The fine pattern forming method of the present invention includes a step of forming a silicon oxide film with a predetermined pattern on a semiconductor substrate, a step of isotropically etching the silicon oxide film to make the pattern finer, and a step of forming a fine pattern on the silicon oxide film. A step of applying a resist onto a substrate on which a silicon oxide film and a pattern are formed, a step of etching back the resist until the upper surface of the silicon oxide film is exposed, and a step of etching away the silicon oxide film to form a fine opening. and obtaining a resist pattern having the following characteristics.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図〜第５図は本発明の一実施例の工程順縦断面図で
ある。第１図はシリコン基板１上に熱酸化によって被着
された酸化シリコン膜２を選択的にエツチングしてパタ
ン形成した状態を示す図である。酸化シリコン膜の選択
エツチングはフォトレジスト３をマスクとしてリアクテ
ィブイオンエツチングによる異方性エツチングでおこな
われ、レジストと同じ幅をもつ酸化シリコン膜２が形成
される。フォトレジスト３のパタニングはｇ線ステッパ
によりおこなわれ、その限界解像度である０、７μｍの
幅でレジストパタン３が残して形成される。つぎに、第
１図のシリコン基板な希弗酸中に浸すことにより酸化シ
リコン膜２の幅を減少せしめる。希弗酸の濃度と液温を
十分にコントロールすることにより減少幅の再現性を実
用的にまで高めるのは容易である。減少幅を０．２μｍ
として酸化膜パタンの幅を０．７μｍから０．５μｍに
まで微細化した状態を示したのが第２図である。第２図
のフォトレジスト３を除去した後に新たにレジスト４を
第３図に示すように酸化シリコン膜２を埋設するように
塗布する。その後、酸素プラズマによりリアクティブイ
オンエツチングを行いレジスト４の膜厚を減小せしめて
いき酸化シリコン膜２の上面が露出された第４図の段階
でエツチングを終了する。しかる後に弗酸に浸すことに
より酸化シリコン膜をエツチング除去してレジストパタ
ン５を得る。このレジストパタン５の開口部分の中層は
０．５μｍである。1 to 5 are vertical sectional views in the order of steps of an embodiment of the present invention. FIG. 1 shows a state in which a silicon oxide film 2 deposited on a silicon substrate 1 by thermal oxidation is selectively etched to form a pattern. Selective etching of the silicon oxide film is performed by anisotropic etching by reactive ion etching using the photoresist 3 as a mask, and a silicon oxide film 2 having the same width as the resist is formed. Patterning of the photoresist 3 is performed using a g-line stepper, and a resist pattern 3 is left with a width of 0.7 μm, which is the limit resolution of the photoresist 3. Next, the width of the silicon oxide film 2 is reduced by immersing the silicon substrate shown in FIG. 1 in dilute hydrofluoric acid. By sufficiently controlling the concentration of dilute hydrofluoric acid and the liquid temperature, it is easy to increase the reproducibility of the reduction width to a practical level. Decrease width by 0.2μm
FIG. 2 shows a state in which the width of the oxide film pattern has been reduced from 0.7 μm to 0.5 μm. After removing the photoresist 3 shown in FIG. 2, a new resist 4 is applied so as to bury the silicon oxide film 2 as shown in FIG. Thereafter, reactive ion etching is performed using oxygen plasma to reduce the film thickness of the resist 4, and the etching is terminated at the stage shown in FIG. 4 when the upper surface of the silicon oxide film 2 is exposed. Thereafter, the silicon oxide film is etched away by immersion in hydrofluoric acid to obtain a resist pattern 5. The middle layer of the opening portion of this resist pattern 5 has a thickness of 0.5 μm.
例えばシリコン基板に微細な溝を形成したい場合、この
ようにして得られたレジストパターンをマスクにリアク
ティブイオンエツチングでシリコン基板を異方性エツチ
ングすることにより幅０．５μｍの溝を形成することが
できる。For example, when it is desired to form a fine groove in a silicon substrate, it is possible to form a groove with a width of 0.5 μm by anisotropically etching the silicon substrate by reactive ion etching using the resist pattern thus obtained as a mask. can.
本実施例ではシリコン基板を酸化することによって形成
された酸化シリコン膜上にフォトレジストを塗布して、
等方性エツチングによる微細化の処理工程をこの酸化シ
リコン膜に加えたが、酸化シリコン膜として気相成長法
で被着したものでも同様の効果が得られることは言うま
でもない。In this example, a photoresist is applied on a silicon oxide film formed by oxidizing a silicon substrate.
Although the silicon oxide film was subjected to a refinement process using isotropic etching, it goes without saying that the same effect can be obtained by depositing a silicon oxide film by vapor phase growth.
以上説明したように本発明ではまず、露光装置の限界解
像度でパタンを形成し、さらに等方性エツチングにより
このパタンを微細化せしめることにより、装置の限界解
像度よりも微細なパタン形成をすることが可能となる。As explained above, in the present invention, a pattern is first formed at the limit resolution of the exposure device, and then this pattern is made finer by isotropic etching, thereby making it possible to form a pattern finer than the limit resolution of the device. It becomes possible.
第１図〜第５図は本発明の一実施例の工程順縦断面図で
ある。
■・・・・・・シリコン基板、２・・団・酸化シリコン
膜、３・・・・・・フォトレジスト、４・旧・・レジス
ト、５・・団・レジストパタン。
代理人 弁理士 内 原 １
日
拒ｌ 図
弔２図
第３図
乃５図1 to 5 are vertical sectional views in the order of steps of an embodiment of the present invention. ■... Silicon substrate, 2... group silicon oxide film, 3... photoresist, 4... old resist, 5... group resist pattern. Agent Patent Attorney Uchihara 1 Day Refusal Diagrams 2, 3 and 5
Claims (1)
る工程と、前記酸化シリコン膜に等方性エッチングを施
してパタンを微細化する工程と、前記微細化された酸化
シリコン膜パタンの形成された基板上にレジストを塗布
する工程と、前記レジストを酸化シリコン膜の上面が露
出するまでエッチバックする工程と、酸化シリコン膜を
エッチング除去することにより微細な開口を有するレジ
ストパタンを得る工程とを含む微細パタン形成方法。a step of forming a silicon oxide film in a predetermined pattern on a semiconductor substrate, a step of performing isotropic etching on the silicon oxide film to make the pattern finer, and a substrate on which the finer silicon oxide film pattern is formed. A process of applying a resist on top of the silicon oxide film, etching back the resist until the top surface of the silicon oxide film is exposed, and etching away the silicon oxide film to obtain a resist pattern having micro openings. Pattern formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27222487A JPH01114041A (en) | 1987-10-27 | 1987-10-27 | Forming method for fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27222487A JPH01114041A (en) | 1987-10-27 | 1987-10-27 | Forming method for fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01114041A true JPH01114041A (en) | 1989-05-02 |
Family
ID=17510842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27222487A Pending JPH01114041A (en) | 1987-10-27 | 1987-10-27 | Forming method for fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01114041A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6917076B2 (en) | 1996-05-28 | 2005-07-12 | United Microelectronics Corporation | Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device |
| KR100603700B1 (en) * | 2002-12-03 | 2006-07-20 | 인터내셔널 비지네스 머신즈 코포레이션 | Method to Enhance Resolution of a Chemically Amplified Photoresist |
| KR100660647B1 (en) * | 2004-09-18 | 2006-12-21 | (주)대진코스탈 | Double cutting paper shredder |
| JP2008306161A (en) * | 2007-06-05 | 2008-12-18 | Hynix Semiconductor Inc | Method for forming fine pattern of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229876A (en) * | 1983-06-13 | 1984-12-24 | Toshiba Corp | Manufacture of schottky gate type field effect transistor |
-
1987
- 1987-10-27 JP JP27222487A patent/JPH01114041A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229876A (en) * | 1983-06-13 | 1984-12-24 | Toshiba Corp | Manufacture of schottky gate type field effect transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6917076B2 (en) | 1996-05-28 | 2005-07-12 | United Microelectronics Corporation | Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device |
| KR100603700B1 (en) * | 2002-12-03 | 2006-07-20 | 인터내셔널 비지네스 머신즈 코포레이션 | Method to Enhance Resolution of a Chemically Amplified Photoresist |
| KR100660647B1 (en) * | 2004-09-18 | 2006-12-21 | (주)대진코스탈 | Double cutting paper shredder |
| JP2008306161A (en) * | 2007-06-05 | 2008-12-18 | Hynix Semiconductor Inc | Method for forming fine pattern of semiconductor device |
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