JPH01110736A - Cleaning by rinser dryer - Google Patents
Cleaning by rinser dryerInfo
- Publication number
- JPH01110736A JPH01110736A JP26736787A JP26736787A JPH01110736A JP H01110736 A JPH01110736 A JP H01110736A JP 26736787 A JP26736787 A JP 26736787A JP 26736787 A JP26736787 A JP 26736787A JP H01110736 A JPH01110736 A JP H01110736A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- elements
- cleaned
- rinser
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 17
- 238000001035 drying Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 abstract description 8
- 241000894006 Bacteria Species 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009395 breeding Methods 0.000 abstract 1
- 230000001488 breeding effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はシリコーンウェハ、フォトマスク、サブストレ
イト、ディスク、ＬＣＤ等をそれらの製造工程中におい
て、リンサードライヤにより洗浄し、あるいはリンスす
る方法に係り、特にリンサードライヤによる洗浄方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method of cleaning or rinsing silicone wafers, photomasks, substrates, disks, LCDs, etc. using a rinser dryer during their manufacturing process. In particular, the present invention relates to a cleaning method using a rinser dryer.
［従来の技術］
シリコーンウェハ、フォトマスク、サブストレイト等は
その製造工程において酸アルカリ洗浄、ブラシ洗浄等が
なされ、その都度、表面の汚れの洗浄、リンス及び乾燥
が行なわれる。このような洗浄、乾燥を一挙に行うもの
として純水による洗浄とＮ２ガスによる乾燥を組み合わ
せたリンサードライヤが開発されている。[Prior Art] Silicone wafers, photomasks, substrates, etc. are subjected to acid-alkali cleaning, brush cleaning, etc. in the manufacturing process, and each time the surface is cleaned of dirt, rinsed, and dried. A rinser dryer that combines cleaning with pure water and drying with N2 gas has been developed to perform such cleaning and drying all at once.
これは、第３図に示すようにチャンバ１′内にセットさ
れた被処理体２０を回転しながら、チャンバ１′内に面
して設けたノズル３′より純水（ＤＩＷ）を噴射して洗
浄・リンスした後、今度は同じノズル３′よりＮ２ガス
を噴射して被処理体２０を乾燥させるもので、水又はガ
スの切り換えはそれらの供給路に設けたバルブ５′等に
よって行っている。This is done by injecting pure water (DIW) from a nozzle 3' provided facing the inside of the chamber 1' while rotating the object 20 set in the chamber 1' as shown in Fig. 3. After cleaning and rinsing, the object to be processed 20 is dried by injecting N2 gas from the same nozzle 3', and switching between water and gas is done by a valve 5' etc. installed in the supply path. .
［発明が解決しようとする問題点］
ところで、このようなリンサードライヤにおいては通常
洗浄用の純水は常温で使用されているため、バルブ等の
水の滞留している部分でバクテリア等が発生し、洗浄す
べき水によってシリコーンウェハ等の被処理体が汚染さ
れてしまうというおそれがあった。[Problems to be Solved by the Invention] By the way, in such a rinser dryer, the pure water for cleaning is normally used at room temperature, so bacteria etc. may grow in parts such as valves where water accumulates. However, there is a risk that objects to be processed, such as silicone wafers, may be contaminated by the water to be washed.
また常温であるため、洗浄後ドライヤで乾燥させる際に
多くの乾燥時間を要した。Furthermore, since the temperature was room temperature, it took a long time to dry the product using a dryer after washing.
本発明はこのような従来の問題点を解決し、水供給路に
おけるバクテリアの発生を防止し、洗浄・リンス効果の
すぐれたリンサードライヤによる洗浄方法を提供するこ
とを目的とする。It is an object of the present invention to solve these conventional problems and provide a cleaning method using a rinser dryer that prevents the generation of bacteria in a water supply channel and has excellent cleaning and rinsing effects.
Ｅ問題点を解決するための手段］
このような目的を達成するため本発明は、リンサードラ
イヤにより被処理体を洗浄する際、加熱された洗浄液に
より前記被処理体を洗浄することを特徴とする。Means for Solving Problem E] To achieve such an object, the present invention is characterized in that when the object to be treated is cleaned by a rinser dryer, the object to be treated is cleaned with a heated cleaning liquid. .
［作用］
洗浄液が加熱されているので液体供給路内においてバク
テリアが発生することはない、又、被処理体には高温の
洗浄液が噴射されるので、洗浄効果、リンス効果に優れ
、しがも被処理体をガス噴射によって乾燥する時にも速
やかに乾燥させることができる。[Function] Since the cleaning liquid is heated, bacteria will not be generated in the liquid supply path, and since the high temperature cleaning liquid is sprayed onto the object to be treated, it has excellent cleaning and rinsing effects, and is easy to use. Even when the object to be processed is dried by gas injection, it can be quickly dried.
［実施例コ
以下、本発明の好ましい一実施例を図面を参照して説明
する。[Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings.
リンサードライヤ１０は第１図に示すように被処理体２
０である例えばシリコーンウェハが複数枚数められたカ
セット２１をカセット毎収納するチャンバ１を備え、チ
ャンバ１内にはカセット２１を回転させるための回転機
構としてロータ２（第２図）が設けられている。ロータ
２はその回転数が選択できるようになっており、通常洗
浄時。As shown in FIG.
The chamber 1 is provided with a chamber 1 for storing cassettes 21 in which a plurality of wafers, for example silicone wafers, are counted, and a rotor 2 (FIG. 2) is provided in the chamber 1 as a rotation mechanism for rotating the cassettes 21. There is. The rotation speed of rotor 2 can be selected during normal cleaning.
約２００〜５００ＲＰＭ、乾燥時、約２０００〜２５０
０ＲＰ Ｍで被処理体２０（カセット２１）を回転させ
る。Approximately 200-500RPM, dry approximately 2000-250
The object to be processed 20 (cassette 21) is rotated at 0RPM.
また、チャンバ１の内側に面して被処理体２０に洗浄・
リンス用の液体又は乾燥用の気体を吹き付けるためのノ
ズル３が１ないし複数個設置される。洗浄・リンス用の
液体としては通常、純水が用いられ乾燥用の気体として
はＮ２ガスが用いられる。純水は図示しない純水製造装
置等の外部設備から配管によりリンサードライヤ内に導
入され、液体供給路４によりバルブ５を介してノズル３
に供給される。Further, the object to be processed 20 facing the inside of the chamber 1 is cleaned and
One or more nozzles 3 are installed for spraying rinsing liquid or drying gas. Usually, pure water is used as the cleaning/rinsing liquid, and N2 gas is used as the drying gas. Pure water is introduced into the rinser dryer through piping from an external equipment such as a pure water production device (not shown), and is introduced into the rinser dryer through a liquid supply path 4 via a valve 5 to a nozzle 3.
is supplied to
バルブ５と導入部７との間の液体供給路４にはその外周
を囲繞する如く長手方向に電気ヒータ８が設置される。An electric heater 8 is installed in the liquid supply path 4 between the valve 5 and the introduction part 7 in the longitudinal direction so as to surround the outer periphery thereof.
洗浄液を加熱するための加熱部は、電熱ヒータの他、ヒ
ートパイプ等（設計上の不都合がない限り）、各種加熱
手段が使用できる。また、その設置個所はノズルに供給
される洗浄液及びバルブ内の洗浄液が所定の温度を維持
できるように液体供給路の一部に設置すればよい。As the heating section for heating the cleaning liquid, in addition to an electric heater, various heating means such as a heat pipe (unless there is a design disadvantage) can be used. Moreover, it may be installed in a part of the liquid supply path so that the cleaning liquid supplied to the nozzle and the cleaning liquid in the valve can maintain a predetermined temperature.
洗浄液の温度は被処理体の種類によっても異なるが通常
５０℃以上、好ましくは６０℃以上あれば本発明の目的
を達成することができる。Although the temperature of the cleaning liquid varies depending on the type of object to be treated, the object of the present invention can be achieved if the temperature is generally 50°C or higher, preferably 60°C or higher.
電気ヒータ８は１．５にワット程度のものが用いられ、
その電源は独自にとってもよいが、リンサードライヤ１
０自体の電源を共用してもよい、その場合、必要があれ
ば変圧回路等を適宜付与する。The electric heater 8 is about 1.5 watts,
You can use your own power source, but you can use a rinser dryer 1
The power source of 0 itself may be shared, in which case a transformer circuit etc. may be provided as appropriate if necessary.
又、電気ヒータは安全機構としてサーモスタットによっ
て過熱が防止されると共に、断熱性のカバー等によって
周辺部材の加熱が防止される。−方、Ｎ２ガスは内蔵さ
れた（あるいは外部に設置された）Ｎ２ガスボンベから
フィルタを通過後気体供給路９によりバルブ５を介して
ノズル３に供給される。In addition, the electric heater is prevented from overheating by a thermostat as a safety mechanism, and a heat insulating cover or the like prevents surrounding members from being heated. On the other hand, N2 gas is supplied from a built-in (or externally installed) N2 gas cylinder to the nozzle 3 through the gas supply path 9 via the valve 5 after passing through the filter.
バルブ５は液体供給路４あるいは気体供給路９を択一的
にノズル３と導通し、純水あるいはＮ２ガスのいずれか
一方をノズル３に供給する。バルブ３の切換えは１手動
でも可能であるがタイマ又はコンピュータ制御等によっ
て自動的に行なうことも可能である。The valve 5 selectively connects the liquid supply path 4 or the gas supply path 9 to the nozzle 3 and supplies either pure water or N2 gas to the nozzle 3. The switching of the valve 3 can be done manually, but it can also be done automatically by a timer or computer control.
以上のような構成において、リンサードライヤ１０は電
源投入と同時に電気ヒータ８がオンされており、液体供
給路４及びバルブ５内の水は加熱されて、例えば５０℃
以上に設定されている。このような状態で被処理体２０
例えばウェハを収納したカセット２１をチャンバ１にセ
ットし、システムを洗浄用にセットする。これによりバ
ルブ５は液体供給路４とノズル３を導通するように切換
えられ、またロータ２の回転は洗浄用の低速レンジに切
換えられる。ロータ２の回転数（ＲＰＭ）は更に専用つ
まみによって！Ｉ！！整することができる。In the above configuration, the electric heater 8 of the rinser dryer 10 is turned on at the same time as the power is turned on, and the water in the liquid supply path 4 and the valve 5 is heated to, for example, 50°C.
It is set above. In this state, the object to be processed 20
For example, a cassette 21 containing wafers is set in the chamber 1, and the system is set for cleaning. As a result, the valve 5 is switched to communicate the liquid supply path 4 and the nozzle 3, and the rotation of the rotor 2 is switched to a low speed range for cleaning. The rotation speed (RPM) of rotor 2 can be adjusted using a special knob! I! ! can be adjusted.
しかる後に、スタートボタンを押すと、ｆ！１気ヒータ
８によって加熱された洗浄用の水がノズル３より噴射さ
れ、被処理体２０は回転しながら洗浄される。この際、
洗浄用の水が高温であるので洗浄力が良好である。所定
時間の洗浄の後、手動又は自動でシステムが洗浄から乾
燥に切り換えられると、バルブ５は気体供給路９を導通
するように切換えられロータ２の回転は高速レンジに切
換えられ、被処理体２０は高速回転しながらノズル３か
ら噴射されるＮ２ガスによって乾燥させられる。After that, press the start button and f! Washing water heated by the 1-air heater 8 is jetted from the nozzle 3, and the object to be processed 20 is washed while rotating. On this occasion,
Since the water used for washing is at a high temperature, the washing power is good. After cleaning for a predetermined time, when the system is manually or automatically switched from cleaning to drying, the valve 5 is switched to conduct the gas supply path 9, the rotation of the rotor 2 is switched to the high speed range, and the object to be processed 20 is switched to the high speed range. is dried by N2 gas injected from the nozzle 3 while rotating at high speed.
被処理体２ｏは高温の水で洗浄されているので水切れが
よく速やかに乾燥する。Since the object to be processed 2o is washed with high-temperature water, it drains well and dries quickly.
被洗浄体を回転する前に静止状態で所定期間加熱された
洗浄液を被洗浄体噴射させ、上記所定期間後被洗浄体を
回転状態で洗浄するようにしてもよい。またこれを繰り
返えしてもよい。さらに洗浄液に超音波を印加してもよ
いし、被洗浄体に超音波を印加してもよい。Before the object to be cleaned is rotated, the heated cleaning liquid may be sprayed on the object for a predetermined period in a stationary state, and after the predetermined period, the object to be cleaned may be cleaned in a rotating state. You may also repeat this. Furthermore, ultrasonic waves may be applied to the cleaning liquid or to the object to be cleaned.
［発明の効果］
以上の説明からも明らかなように本発明によれば、洗浄
用の液体は高温に保たれているので、液体供給路でのバ
クテリア等の発生を防止することができ、しかも洗浄・
リンス効果も高い。更には乾燥工程を短縮することがで
きる。[Effects of the Invention] As is clear from the above description, according to the present invention, since the cleaning liquid is kept at a high temperature, it is possible to prevent the generation of bacteria, etc. in the liquid supply path. Washing·
It also has a great rinsing effect. Furthermore, the drying process can be shortened.
第１図は本発明の一実施例のリンサードライヤを示す図
、第２図は同実施例のリンサードライヤの要部を示す図
、第３図は従来のリンサードラインを示す図である。
１・・・・・・・チャンバー
２・・・・・・・ロータ
３・・・・・・・ノズル
４・・・・・・・液体供給路
５・・・・・・・バルブ
８・・・・・・・加熱部（電気ヒータ）９・・・・・・
・気体供給路
１０・・・・・リンサードライヤ
２０・・・・・被処理体（シリコーンウェハ）２１・・
・・・カセット
代理人 弁理士 守 谷 −雄
第１図
第２図
３゛FIG. 1 is a diagram showing a rinser dryer according to an embodiment of the present invention, FIG. 2 is a diagram showing main parts of the rinser dryer according to the same embodiment, and FIG. 3 is a diagram showing a conventional rinser line. 1... Chamber 2... Rotor 3... Nozzle 4... Liquid supply path 5... Valve 8... ... Heating part (electric heater) 9 ...
・Gas supply path 10...Rinser dryer 20...Object to be processed (silicone wafer) 21...
...Cassette agent Patent attorney Moritani-O Figure 1 Figure 2 Figure 3
Claims (3)
加熱された洗浄液により前記被処理体を洗浄することを
特徴とするリンサードライヤによる洗浄方法。(1) When cleaning the object to be treated with a rinser dryer,
A cleaning method using a rinser dryer, characterized in that the object to be processed is cleaned with a heated cleaning liquid.
射することを特徴とする特許請求の範囲第１項記載のリ
ンサードライヤによる洗浄方法。(2) A cleaning method using a rinser dryer according to claim 1, characterized in that the object to be treated is rotated and heated cleaning liquid is injected thereto.
第１項記載のリンサードライヤによる洗浄方法。(3) A cleaning method using a rinser dryer according to claim 1, wherein the temperature of the cleaning liquid is 50° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62267367A JPH07114192B2 (en) | 1987-10-23 | 1987-10-23 | Cleaning device and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62267367A JPH07114192B2 (en) | 1987-10-23 | 1987-10-23 | Cleaning device and cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01110736A true JPH01110736A (en) | 1989-04-27 |
| JPH07114192B2 JPH07114192B2 (en) | 1995-12-06 |
Family
ID=17443844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62267367A Expired - Lifetime JPH07114192B2 (en) | 1987-10-23 | 1987-10-23 | Cleaning device and cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07114192B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112509943A (en) * | 2020-11-10 | 2021-03-16 | 芯米(厦门)半导体设备有限公司 | Wafer surface drying and blowing equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4849958B2 (en) * | 2006-05-26 | 2012-01-11 | 東京エレクトロン株式会社 | Substrate processing unit and substrate processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548455A (en) * | 1977-06-22 | 1979-01-22 | Hitachi Ltd | Cleansing/drying device for products |
| JPS558052A (en) * | 1978-06-30 | 1980-01-21 | Mitsubishi Electric Corp | Rotary washer-drier |
| JPS6038021A (en) * | 1983-08-11 | 1985-02-27 | Hitachi Zosen Corp | Bag filter |
| JPS6088299A (en) * | 1983-10-19 | 1985-05-18 | Shinwa Control Kk | Piping systen of water flowing system and method of preventing stagnation in said piping system |
-
1987
- 1987-10-23 JP JP62267367A patent/JPH07114192B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548455A (en) * | 1977-06-22 | 1979-01-22 | Hitachi Ltd | Cleansing/drying device for products |
| JPS558052A (en) * | 1978-06-30 | 1980-01-21 | Mitsubishi Electric Corp | Rotary washer-drier |
| JPS6038021A (en) * | 1983-08-11 | 1985-02-27 | Hitachi Zosen Corp | Bag filter |
| JPS6088299A (en) * | 1983-10-19 | 1985-05-18 | Shinwa Control Kk | Piping systen of water flowing system and method of preventing stagnation in said piping system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112509943A (en) * | 2020-11-10 | 2021-03-16 | 芯米(厦门)半导体设备有限公司 | Wafer surface drying and blowing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07114192B2 (en) | 1995-12-06 |
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