JPH01109327A - Display device - Google Patents
Display deviceInfo
- Publication number
- JPH01109327A JPH01109327A JP62268658A JP26865887A JPH01109327A JP H01109327 A JPH01109327 A JP H01109327A JP 62268658 A JP62268658 A JP 62268658A JP 26865887 A JP26865887 A JP 26865887A JP H01109327 A JPH01109327 A JP H01109327A
- Authority
- JP
- Japan
- Prior art keywords
- display device
- wiring
- superconducting
- thin film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 4
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000001934 delay Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002887 superconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜トランジスタ（以下ＴＰＴと呼ぶ）等のス
イッチング素子と画素電極とをマトリックス状に有する
アクティブマトリックスを用いて、液晶などの表示材料
をＵａｔ、、て画像表示をおこなう表示装置に間するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention uses an active matrix that has switching elements such as thin film transistors (hereinafter referred to as TPT) and pixel electrodes in a matrix to display display materials such as liquid crystals. The device is connected to a display device that displays images.
以下、上記の代表例として、液晶表示装置を例に説明を
行う。Hereinafter, a description will be given using a liquid crystal display device as a representative example of the above.
従来の技術
第３図はＴＰＴによるアクティブマトリックスを用いた
液晶表示装置の要部の回路図である。破線ＡＢＣＤで囲
まれた表示部に画素（破線ｌで囲まれた部分）を多数マ
トリックス状に繰り返して有している。各画素にはＴＰ
Ｔ２が作り込まれており、ＴＰＴのゲート電極は走査信
号配線３ａ。BACKGROUND OF THE INVENTION FIG. 3 is a circuit diagram of a main part of a liquid crystal display device using an active matrix based on TPT. The display section surrounded by the broken line ABCD has a large number of pixels (the part surrounded by the broken line l) repeated in a matrix. TP for each pixel
T2 is built in, and the gate electrode of TPT is the scanning signal wiring 3a.
３ｂ、３ｃ、 ・・・３ｚ、ソース電極は画像信号配
線４ａ、 ４ｂ、 ４ｃ、 ・・・４ｚ、 に
接続されており、ドレイン電極はコンデンサＣｓと画素
電極５に接続されている。液晶７は対向電極６と画素電
極５の間に挟まれて駆動される。対向電極６は表示部全
体にわたる広い１枚の電極で構成されている。コンデン
サＣｓは画像信号の保持用に用いられており、共通配線
８にも接続されている。3b, 3c, . . . 3z, source electrodes are connected to image signal wirings 4a, 4b, 4c, . . . 4z, and drain electrodes are connected to capacitor Cs and pixel electrode 5. The liquid crystal 7 is sandwiched between the counter electrode 6 and the pixel electrode 5 and driven. The counter electrode 6 is composed of one wide electrode that covers the entire display section. The capacitor Cs is used to hold the image signal and is also connected to the common wiring 8.
９と１０と１１は駆動用の周辺回路である（なお図面で
は配線の本数が少ないが、ＴＶ表示等を行う場合には走
査信号配線と画像信号配線の数は数百本を越すものとな
る）、また、配線１２は走査信号配線や画像信号配線に
断線を生じた場合に信号の迂回路をつくるための補助配
線である。9, 10, and 11 are peripheral circuits for driving (note that the number of wiring is small in the drawing, but when performing TV display, etc., the number of scanning signal wiring and image signal wiring will exceed several hundred. ), and the wiring 12 is an auxiliary wiring for creating a signal detour when a break occurs in the scanning signal wiring or the image signal wiring.
第４図は第３図に示した従来の液晶表示装置の表示部の
部分断面図である。第３図の回路と同−目的部には同一
符号を記している。第１の絶縁性基板２０上には走査信
号配線３と共通配線８を金属薄膜により形成し、ゲート
絶縁層２１と半導体層（例えば非晶質５ｉ）２２とエツ
チングストッパとなる絶縁層２３、ざらにオーミックコ
ンタクトをとるための低抵抗の半導体層２４を形成し、
透光性の導電性膜による画素電極５を形成し、この後Ｔ
ＰＴのソース・ドレイン電極４と２５を金属薄膜により
形成する、なお電極４は画像信号配線を兼ねている、そ
して画素電極５と共通配線８との間にコンデンサＣｓが
形成されている。また第２の絶縁性基板３０にはカラー
フィルターとなる染色層２７，２８．２９を形成し、２
種類の染色層を重ねることによりブラックストライプを
形成している、ブラックストライプはＴＰＴの遮光及び
画素電極以外を通る漏れ光を遮断する働きをする。ざら
に透光性の導電性膜による対向電極６を形成する。これ
らの２枚の基板に配向膜２６を被着し配向処理を行ない
液晶７を挟み込み、対向電極６と画素型［ｔ５の間に電
圧をかけて液晶７を駆動する構成となっている（図面で
は省略したが、実際には第４図のものに偏向板をはりつ
け、光源や反射板を配置して表示装置とする）。FIG. 4 is a partial cross-sectional view of the display section of the conventional liquid crystal display device shown in FIG. Components with the same purpose as the circuit in FIG. 3 are denoted by the same reference numerals. On the first insulating substrate 20, a scanning signal line 3 and a common line 8 are formed of a metal thin film, a gate insulating layer 21, a semiconductor layer (for example, amorphous 5i) 22, an insulating layer 23 serving as an etching stopper, and a rough pattern. forming a low-resistance semiconductor layer 24 for making ohmic contact with the
A pixel electrode 5 is formed using a light-transmitting conductive film, and then T
The source/drain electrodes 4 and 25 of the PT are formed of metal thin films.The electrode 4 also serves as an image signal wiring, and a capacitor Cs is formed between the pixel electrode 5 and the common wiring 8. Furthermore, dyed layers 27, 28, and 29, which serve as color filters, are formed on the second insulating substrate 30.
A black stripe is formed by stacking different dyed layers, and the black stripe functions to block light from the TPT and from leaking light that passes through areas other than the pixel electrodes. A counter electrode 6 made of a roughly transparent conductive film is formed. An alignment film 26 is applied to these two substrates, an alignment process is performed, a liquid crystal 7 is sandwiched therebetween, and a voltage is applied between the counter electrode 6 and the pixel type t5 to drive the liquid crystal 7 (see the drawing). Although omitted here, in reality, a polarizing plate is attached to the one shown in Fig. 4, and a light source and a reflecting plate are arranged to form a display device.)
第５図に第２の絶縁性基板に作り込まれた対向電極をＴ
ＰＴを作り込んだ第１の絶縁性基板上の電極に接続する
方法を示す、第５図（ａ）は平面図、第５図（ｂ）は接
続部の部分断面図である。Figure 5 shows the counter electrode built into the second insulating substrate.
FIG. 5(a) is a plan view, and FIG. 5(b) is a partial cross-sectional view of a connecting portion, showing a method of connecting to an electrode on a first insulating substrate on which PT is built.
第１の絶縁性基板２０上の電極４２と４３を第２の絶縁
性基板の対向電極６に接続する為に導電性の樹脂４０と
４１を用いている、なお４５は液晶を封じ込めるための
樹脂である。第５図のような構成とすることで駆動回路
との接続を第１の絶縁性基板２０から行なうだけですむ
ようになっている。なお第５図では走査信号配線や画像
信号配線など、説明と直接関係のない部分は図面から省
略している（上記については例えば、松本ニー：電子デ
イスプレィデバイス（１９８４）オーム社参Ｎ）。Conductive resins 40 and 41 are used to connect the electrodes 42 and 43 on the first insulating substrate 20 to the counter electrode 6 on the second insulating substrate, and 45 is a resin for sealing the liquid crystal. It is. With the configuration shown in FIG. 5, connection to the drive circuit only needs to be made from the first insulating substrate 20. Note that in FIG. 5, portions not directly related to the explanation, such as scanning signal wiring and image signal wiring, are omitted from the drawing (see, for example, N. Matsumoto: Electronic Display Devices (1984), Ohm Publishing Co., Ltd.).
発明が解決しようとする問題点
画素電極とＴＦＴなどのスイッチング素子をマトリック
ス状に有する表示装置は、近年、表示画面の大型化、高
密度化および高画質化の開発が進んでいる。ところが従
来の表示装置においては、表示画面の大型化、高密度化
および高画質化を行なう際に表示装置の電極や配線の抵
抗と配線に付随する容量値が問題となっていた。とりわ
け上述の様な非晶質ＳｉのＴＦＴによるアクティブマト
リックスを用いた従来の液晶表示装置の場合には大きな
ＴＰＴの寄生容量（ゲート・ドレイン電極間やゲート・
ソース電極間の容量）を持つため事態は深刻である。Problems to be Solved by the Invention In recent years, display devices having pixel electrodes and switching elements such as TFTs in a matrix have been developed to have larger display screens, higher density, and higher image quality. However, in conventional display devices, when increasing the size, density, and image quality of the display screen, the resistance of the electrodes and wiring of the display device and the capacitance value associated with the wiring have become problems. In particular, in the case of a conventional liquid crystal display device using an active matrix of amorphous Si TFTs as described above, there is a large parasitic capacitance of the TPT (between the gate and drain electrodes and between the gate and drain electrodes).
The situation is serious because there is a capacitance between the source electrodes.
表示画面が大きくなると配線の長さが長くなり、配線の
端から端までの抵抗値が大きくなる。抵抗値が大きくな
り配線の電流供給能力が小さくなるとともに、第３図に
示したように走査信号配線３ａ、３ｂ、 ・・・、３
ｚおよび画像信号配線４ａ。As the display screen becomes larger, the length of the wiring becomes longer, and the resistance value from one end of the wiring to the other becomes larger. As the resistance value increases and the current supply capacity of the wiring decreases, as shown in FIG.
z and image signal wiring 4a.
４ｂ、 ・・・、４ｚおよび補助配［１２あるいは共
通配線８には様々な容量成分（直接的にはＣｓ、このほ
かにもたとえば上記各配線間のクロスオーバー容量や各
配線と対向電極間の容量、あるいはＴＰＴの寄生容量）
が付随しており、大型になるほどますます容量が大きく
なって、実際の表示時において信号の伝達に遅延を生じ
る。このためＴＰＴの動作が走査電極配線の場所により
異なったり（第３図では表示部の右はど走査信号が遅延
すると共に信号波形がなまるためＴＰＴのＯＮ時の動作
が悪くなり画像信号のコンデンサＣｓへの書き込み特性
が悪くなる。とりわけ非晶質ＳｉのＴＰＴの場合には結
晶質５ｉＴＦＴに比べ電界効果易動度が小さいのでこの
問題はより厳しいものとなる）、あるいはコンデンサＣ
ｓに画像信号を保持する瞬閏の共通配線の電位が場所に
よって異なったりする。4b, . capacitance or parasitic capacitance of TPT)
The larger the size, the larger the capacity, which causes a delay in signal transmission during actual display. For this reason, the operation of the TPT differs depending on the location of the scanning electrode wiring (in Figure 3, the scanning signal is delayed and the signal waveform becomes dull, so the operation when the TPT is turned on deteriorates, and the image signal capacitor The writing characteristics to Cs will deteriorate.This problem is particularly severe in the case of amorphous Si TPTs as their field effect mobility is smaller than that of crystalline 5i TFTs), or the capacitor Cs.
The potential of the common wire of the instantaneous jump that holds the image signal in s differs depending on the location.
さらに高密度化を考える場合にも、配線本数の増加と共
に配線幅が小さくなり配線の抵抗値が大きくなる。しか
も走査信号配線本数の増加と共に走査時のＴＰＴのＯＮ
時間が短くなるので上記と同様の問題が生じる。Furthermore, when considering higher density, as the number of wires increases, the wire width becomes smaller and the resistance value of the wires increases. Moreover, as the number of scanning signal wires increases, TPT turns ON during scanning.
The same problem as above occurs because the time is shortened.
また透光性の導電性膜による対向電極６には、通常ＩＴ
Ｏ（ＩｎとＳｎの酸化物）薄膜等が用いられるが、形状
や導電性の樹脂からの距離の関係で、実際の表示中には
必ずしも表示画面全体にわたって等電位に保たれないこ
とがしばしばある、さらにこの場合には表示画面が大き
くなると、表示画面の周辺部にしか導電性の樹脂を配置
できないため、表示画面中央部と周辺部の対向電極の電
位が微妙に異なってくる（とりわけコンデンサＣ８に画
像信号を保持する瞬間の対向電極の電位分布が問題とな
る）。Further, the counter electrode 6 made of a light-transmitting conductive film is usually made of an IT film.
O (In and Sn oxide) thin films are used, but due to the shape and distance from the conductive resin, it is often not possible to maintain an equal potential across the entire display screen during actual display. Furthermore, in this case, as the display screen becomes larger, conductive resin can only be placed at the periphery of the display screen, so the potentials of the opposing electrodes at the center and periphery of the display screen will differ slightly (especially when the capacitor C8 (The problem is the potential distribution of the opposing electrode at the moment when the image signal is held.)
上記の信号遅延や電位の変位成分は、いずれもＴＶ表示
などの正確な画像表示を行なう上での障害となっている
。また走査信号配線や画像信号配線に断線を生じた際に
使用する補助配棒の抵抗値と容量値も大きくなるので、
補助配線を用いて信号を迂回させた部分は信号値が変化
してしまい均一な画像表示を行なう上での障害となって
いた。Both of the above-mentioned signal delays and potential displacement components are obstacles to accurate image display such as TV display. In addition, the resistance and capacitance of the auxiliary rod used in the event of a break in the scanning signal wiring or image signal wiring also increases.
In the portion where the signal is detoured using the auxiliary wiring, the signal value changes, which is an obstacle to uniform image display.
本発明では上記の障害を低減し、より正確な画像表示を
行ない、表示画面の大型化、高密度化あるいは高画質化
を図ることを目的とするものである。 ′
問題点を解決するための手段
Ｅ記問題点を解決するための本発明の技術的手段は、表
示装置の走査信号配線や画像信号配線さらには共通配線
や補助配線や対向電極などの可能な部分を超電導の特性
を有する材料を使用して形成することである。このこと
により超電導の特性を有する材料を使用して形成した配
線や電極に印可された信号の遅延や電位のばらつきを従
来に比べて著しく小さくすることが可能となる。It is an object of the present invention to reduce the above-mentioned problems, display images more accurately, and increase the size, density, and quality of the display screen. ' Means for Solving the Problems The technical means of the present invention for solving the problems in item E is to improve the scanning signal wiring, image signal wiring, common wiring, auxiliary wiring, counter electrode, etc. of the display device. The part is formed using a material that has superconducting properties. This makes it possible to significantly reduce signal delays and potential variations applied to wirings and electrodes formed using materials with superconducting properties, compared to conventional methods.
作用
本発明は上記手段により表示装置の配線や電極に印可さ
れた信号の遅延や電位のばらつきが著しく小さくなるた
め、より正確な画像表示が可能となり、表示画面の大型
化、高密度化あるいは高画質化を図ることが容易になる
。Effects of the Invention The present invention uses the above-mentioned means to significantly reduce the delay in signals applied to the wiring and electrodes of the display device, as well as the variations in potential, thereby making it possible to display more accurate images, and making it possible to display larger, higher-density or higher-density display screens. It becomes easy to improve image quality.
実施例 以下、本発明の実施例を図面をもとに説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の実施例の液晶表示装置の表示部の部分
断面図である。回路的には従来の第３図のものと同一で
あるが、使用している材料や製造工程が従来のものと一
部具なる（第３図と同一構成物には同一符号を記してい
る）、第１図の液晶表示装置は以下のごとく作成される
。まず透光性の第１の絶縁性基板２０上に酸化物超電導
薄膜（ＥＵとＢａとＣｕを含む酸化物超電導体）をスパ
ッタ法により真空室内で形成した後、真空を破る事なく
その上に薄い金属層（ＰｔやＣ，ｒ等）を被着′する。FIG. 1 is a partial sectional view of a display section of a liquid crystal display device according to an embodiment of the present invention. The circuit is the same as the conventional one in Figure 3, but the materials and manufacturing processes used are some of the same as the conventional one (the same components as in Figure 3 are indicated by the same symbols). ), the liquid crystal display device shown in FIG. 1 is produced as follows. First, an oxide superconducting thin film (an oxide superconductor containing EU, Ba, and Cu) is formed on a transparent first insulating substrate 20 in a vacuum chamber by sputtering, and then the film is deposited on top of the thin film without breaking the vacuum. A thin metal layer (Pt, C, r, etc.) is deposited.
この後真空室から取り出しエツチングにより走査信号配
線１０３ａ、１０３ｂ及び共通配線１０８ａ、１０８ｂ
を形成する（１０３ａと１０８ａが酸化物超電導薄膜で
あり、１０３ｂと１０８ｂが金属薄膜である）、この後
、ゲート絶縁層２１と半導体層とうしての非晶質５ｉ２
２とエツチングストッパとなる絶縁層２３を被着しエツ
チングにより第１Ｕ！！ｉの形状とする。次にオーミッ
クコンタクトをとるための低抵抗の半導体としてリンを
含んだ低抵抗の非晶質５ｉ２４を被着し、図の形状にエ
ツチングする。モして透光性のＩＴＯ薄膜により画素電
極５を形成する。この後、酸化物超電導薄膜と金属層を
真空を破る事なく連続して被着し、エツチングに°より
ソース・ドレイン電極１０４ａ、１０４ｂ、１２５ａ、
１２５ｂを形成する（１０４ａと１２５ａが酸化物超電
導薄膜であり、１０４ｂと１０５ｂが金属層である）。After this, the scanning signal wirings 103a, 103b and the common wirings 108a, 108b are removed from the vacuum chamber and etched.
(103a and 108a are oxide superconducting thin films, and 103b and 108b are metal thin films). After this, amorphous 5i2 is formed as a gate insulating layer 21 and a semiconductor layer.
2 and an insulating layer 23 serving as an etching stopper, and etching the 1st U! ! Shape i. Next, a low-resistance amorphous material 5i 24 containing phosphorus is deposited as a low-resistance semiconductor for making ohmic contact, and etched into the shape shown in the figure. Then, the pixel electrode 5 is formed from a transparent ITO thin film. After this, the oxide superconducting thin film and the metal layer are successively deposited without breaking the vacuum, and etched to form the source/drain electrodes 104a, 104b, 125a,
125b (104a and 125a are oxide superconducting thin films, and 104b and 105b are metal layers).
もう−枚の透光性の第２の絶縁性基板３０上にも先出の
酸化物超電導体によるブラックストライプ１５０を形成
し、この後、染色層２７． ２８． ２９を形成し、さ
らにＩＴＯ薄膜２６を被着する。 −そして第４図同様
に、これら２枚の基板に配向膜２６を被着し配向処理を
行い液晶７を挟みこんで表示装置としている。第２図は
上記実施例の液晶表示装置の各配線の相間を示す図であ
り、画像信号配線の断線を補助配線を用いて救済を行な
った時のものを示している０画像信号配線４ｄが表示部
中のＸ印で断線しており、そのためワイヤボンディング
６０．６１を用いて補助配線１２ａとの接続を行なって
信号の迂回路を作っている。こうすることにより画像信
号配線４ｄのＸ印より下側の部分にも信号が伝達される
。この時補助配線１２および１２ａを酸化物超電導材料
と金属材料の２層構造で形成したため信号を迂回させて
も信号の変動が従来に比べて大変小さくなった。A black stripe 150 made of the above-mentioned oxide superconductor is also formed on the second transparent insulating substrate 30, and then the dyed layer 27. 28. 29 is formed, and then an ITO thin film 26 is deposited. - Then, similarly to FIG. 4, an alignment film 26 is applied to these two substrates, an alignment treatment is performed, and a liquid crystal 7 is sandwiched between them to form a display device. FIG. 2 is a diagram showing the phase of each wiring of the liquid crystal display device of the above embodiment, and the 0 image signal wiring 4d is shown when the disconnection of the image signal wiring is repaired using the auxiliary wiring. There is a disconnection at the X mark in the display section, so wire bonding 60, 61 is used to connect to the auxiliary wiring 12a to create a detour for the signal. By doing so, the signal is also transmitted to the portion of the image signal wiring 4d below the X mark. At this time, since the auxiliary wirings 12 and 12a were formed with a two-layer structure of an oxide superconducting material and a metal material, even if the signal was detoured, the fluctuation in the signal was much smaller than in the past.
第１１！Ｉと第２図に示したように、走査信号配線、Ｔ
ＰＴのソース・ドレイン電極と画像信号配線、対向電極
中のブラックストライプ、補助配線等の少なくとも一部
に超電導材料を用いることにより、これらの配線や電極
における信号の遅延や電位の変動が大変小さくなり、画
質が向上した。これに伴い表示装置の大型化、高密度化
が容易となった。11th! I and scanning signal wiring, T as shown in FIG.
By using superconducting materials for at least part of the PT source/drain electrodes, image signal wiring, black stripes in the counter electrode, auxiliary wiring, etc., signal delays and potential fluctuations in these wirings and electrodes are greatly reduced. , the image quality has improved. Along with this, it has become easier to increase the size and density of display devices.
なお走査信号配線を酸化物超電導体と金属の２層にした
のは、製造プロセス中の酸化物超電導配線の劣化（プロ
セス中の水分等に強く関係する）に対する保護の為と、
２層にする事で断線確率が減少することを目的としてい
る。また画像信号配線を酸化物超電導体と金属の２層で
形成したのも上記の走査信号配線の場合と同様の目的の
ほかに、段差がある部分に酸化物超電導体の配線を形成
した場合に生じるステップカバレージ不良による断線発
生の防止のために２層構造としている。また対向電極中
のブラックストライプは表示部全体に広がっているため
、対向電極の電位変動が大変小さくなり、導電性樹脂に
よるコンタクトの数を減らすことが可能で、大型の表示
部であっても周辺部の接続のみで十分となった。あるい
は超電導材料は光を通さないのでブラックストライプと
して用いることで非常に高性能の遮光層となっている。The reason why the scanning signal wiring is made of two layers of oxide superconductor and metal is to protect the oxide superconducting wiring from deterioration during the manufacturing process (which is strongly related to moisture etc. during the process).
The purpose is to reduce the probability of wire breakage by having two layers. In addition, the image signal wiring is formed with two layers of oxide superconductor and metal for the same purpose as the scanning signal wiring described above. A two-layer structure is used to prevent the occurrence of wire breakage due to poor step coverage. In addition, since the black stripe in the counter electrode spreads over the entire display area, the potential fluctuations of the counter electrode are extremely small, making it possible to reduce the number of contacts made with conductive resin, and even in large display areas, it is possible to It is now sufficient to connect only the parts. Alternatively, since superconducting materials do not transmit light, they can be used as black stripes to create extremely high-performance light-shielding layers.
走査信号配線も同様に遮光の働きをし画質の向上に役だ
っている。The scanning signal wiring also acts as a light shield, helping to improve image quality.
また本実施例では全ての配線に超電導薄膜を用いたが個
別に用いても、それぞれに応じた画質の向上が認められ
た。Further, in this example, superconducting thin films were used for all the wirings, but even if they were used individually, the image quality was improved accordingly.
発明の効果
以上述べたように、本発明を用いることにより表示装置
の配線や電極における信号の遅延や電位の変動が大幅に
改善され、画質が向上した。またこのことにより大型化
、高密度化が容易となった。Effects of the Invention As described above, by using the present invention, signal delays and potential fluctuations in the wiring and electrodes of a display device are significantly improved, and image quality is improved. This also makes it easier to increase the size and density.
また、この他にも、超電導材料が大きな電流を流せるの
で、超電導材料を用いた配線の膜厚を薄くでき、そのた
めこれらの上に形成した膜のステップカバレージが良く
なり歩留まりが向上する。。In addition, since superconducting materials can flow large currents, the thickness of interconnects using superconducting materials can be reduced, which improves the step coverage of films formed thereon and improves yield. .
あるいは配線幅を小さくできるのでクロスオーバー容量
も小さくなる他、配線幅が小さくなった分だけ画素電極
を大きくでき、開口率（有効表示面積の割合）が向上す
るという効果も生じ、実用上大変有効である。Alternatively, since the wiring width can be made smaller, crossover capacitance is also reduced, and the pixel electrode can be made larger by the amount that the wiring width is reduced, which has the effect of improving the aperture ratio (ratio of effective display area), which is very effective in practice. It is.
第１図は本発明の一実施例の液晶表示装置の要部断面図
、第２図は同実施例の配線の相間図、第よる基板閏の電
気的接続を示す平面図と断面図である。
１・・・画素、２・・・ＴＦＴ、５・・・画素電極、６
・・・対向電極、７・・・液晶、８・・・共通配線、２
０・・・第１の絶縁性基板、３゜・・・第２の絶縁性基
板、１０３ａ・・・超電導薄膜による走査信号配線の一
部、１０８ａ・・・超電導薄膜による共通配線の一部、
１０４ａ、１２５ａ・・・超電導薄膜によるソース・ド
レイン電極のの一部、１５６・・・超電導薄膜によるブ
ラックストライプ、 ゛
代理人の氏名 弁理士 中尾敏男 はか１名第２図
第 ３！！ＩFIG. 1 is a cross-sectional view of a main part of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a phase diagram of wiring of the same embodiment, and a plan view and a cross-sectional view showing electrical connections between substrates according to the first embodiment. . 1... Pixel, 2... TFT, 5... Pixel electrode, 6
...Counter electrode, 7...Liquid crystal, 8...Common wiring, 2
0...First insulating substrate, 3°...Second insulating substrate, 103a...Part of scanning signal wiring made of superconducting thin film, 108a...Part of common wiring made of superconducting thin film,
104a, 125a... Part of the source/drain electrode made of superconducting thin film, 156... Black stripe made of superconducting thin film, ゛ Name of agent: Patent attorney Toshio Nakao (1 person) Figure 2 Figure 3! ! I
Claims (12)
をマトリックス状に有し、かつ前記スイッチング素子に
電気的に接続された複数本の配線群を有し、前記配線群
の少なくとも一部分に超電導の特性を有する材料を使用
することを特徴とする表示装置。(1) A first insulating substrate has pixel electrodes and switching elements in a matrix, and a plurality of wiring groups electrically connected to the switching elements, and at least a portion of the wiring group has superconducting conductivity. A display device characterized by using a material having the following characteristics.
し、前記対向電極の少なくとも一部分に超電導の特性を
有する材料を使用することを特徴とする特許請求の範囲
第１項記載の表示装置。(2) A driven material is sandwiched between a pixel electrode and a counter electrode, and a material having superconducting properties is used for at least a portion of the counter electrode. Display device.
２の絶縁性基板に対向電極を有し、前記対向電極と第１
の絶縁性基板上の電極間の電気的導通を導電性樹脂で接
続することを特徴とする特許請求の範囲第２項記載の表
示装置。(3) having a counter electrode on a second insulating substrate different from the first insulating substrate having the pixel electrode;
3. The display device according to claim 2, wherein electrical continuity between the electrodes on the insulating substrate is connected by a conductive resin.
線を生じた場合に信号の迂回路をつくるための補助配線
を有し、前記補助配線に超電導の特性を有する材料を使
用することを特徴とする特許請求の範囲第１項記載の表
示装置。(4) It has an auxiliary wiring for creating a signal detour in the event of a disconnection in the wiring electrically connected to the switching element, and the auxiliary wiring is made of a material with superconducting properties. A display device according to claim 1.
記共通電極の少なくとも一部分に超電導の特性を有する
材料を使用することを特徴とする特許請求の範囲第１項
記載の表示装置。(5) The display device according to claim 1, wherein a capacitor is provided between the pixel electrode and the common electrode, and a material having superconducting properties is used for at least a portion of the common electrode.
有する材料を使用することを特徴とする特許請求の範囲
第１項記載の表示装置。(6) The display device according to claim 1, characterized in that a material having superconducting properties is used as the light-shielding layer of the switching element.
電極の少なくとも一部分は金属材料との２層以上の構造
を有することを特徴とする特許請求の範囲第１項記載の
表示装置。(7) The display device according to claim 1, wherein at least a portion of the wiring or electrode using a material having superconducting properties has a structure of two or more layers with a metal material.
材料を使用した配線または電極を形成する際、前記段差
部において、前記超伝導の特性を有する材料と金属材料
の少なくとも２層以上の薄膜により前記配線または電極
を形成していることを特徴とする特許請求の範囲第７項
記載の表示装置。(8) When forming wiring or electrodes using a material with superconducting properties in a part where there is a stepped part in the base, at least two layers or more of the material having the superconducting property and a metal material in the stepped part 8. The display device according to claim 7, wherein the wiring or electrode is formed of a thin film.
Ｏを含む酸化物超電導材料であることを特徴とする特許
請求の範囲第１項記載の表示装置。(9) The display device according to claim 1, wherein the material having superconducting properties is an oxide superconducting material containing at least Cu and O.
後、前記真空室の真空を破らずに前記酸化物超電導材料
上に金属材料を形成し、これをエッチングすることによ
り配線や電極を形成することを特徴とする特許請求の範
囲第９項記載の表示装置。(10) After forming an oxide superconducting material in a vacuum chamber for film formation, a metal material is formed on the oxide superconducting material without breaking the vacuum in the vacuum chamber, and this is etched to form wiring and electrodes. A display device according to claim 9, characterized in that it forms a.
いることを特徴とする特許請求の範囲第１０項記載の表
示装置。(11) The display device according to claim 10, characterized in that a thin film transistor is used as the switching element.
ことを特徴とする特許請求の範囲第１１項記載の表示装
置。(12) The display device according to claim 11, characterized in that a thin film transistor using amorphous Si is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268658A JPH01109327A (en) | 1987-10-23 | 1987-10-23 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268658A JPH01109327A (en) | 1987-10-23 | 1987-10-23 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01109327A true JPH01109327A (en) | 1989-04-26 |
Family
ID=17461609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62268658A Pending JPH01109327A (en) | 1987-10-23 | 1987-10-23 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01109327A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01195427A (en) * | 1988-01-29 | 1989-08-07 | Canon Inc | Display device |
| JPH05181151A (en) * | 1991-11-06 | 1993-07-23 | Nec Corp | Liquid crystal substrate and liquid crystal display device |
| JPH0651348A (en) * | 1992-06-01 | 1994-02-25 | Samsung Electron Co Ltd | Liquid crystal display device and manufacture thereof |
| US6049368A (en) * | 1997-09-12 | 2000-04-11 | Lg Lcd Inc. | Liquid crystal display having only one common line extending along the edge of substrate without connection pads |
-
1987
- 1987-10-23 JP JP62268658A patent/JPH01109327A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01195427A (en) * | 1988-01-29 | 1989-08-07 | Canon Inc | Display device |
| JPH05181151A (en) * | 1991-11-06 | 1993-07-23 | Nec Corp | Liquid crystal substrate and liquid crystal display device |
| JPH0651348A (en) * | 1992-06-01 | 1994-02-25 | Samsung Electron Co Ltd | Liquid crystal display device and manufacture thereof |
| US5686977A (en) * | 1992-06-01 | 1997-11-11 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
| US5696566A (en) * | 1992-06-01 | 1997-12-09 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
| US5847780A (en) * | 1992-06-01 | 1998-12-08 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
| US6049368A (en) * | 1997-09-12 | 2000-04-11 | Lg Lcd Inc. | Liquid crystal display having only one common line extending along the edge of substrate without connection pads |
| US6052167A (en) * | 1997-09-12 | 2000-04-18 | Lg Lcd Inc. | Liquid crystal display having only one common line in peripheral region of substrate |
| US6252643B1 (en) | 1997-09-12 | 2001-06-26 | Lg Lcd Inc. | Liquid crystal display having only one common line extending along substrate edge |
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