JPH01106514A - Surface acoustic wave element - Google Patents
Surface acoustic wave elementInfo
- Publication number
- JPH01106514A JPH01106514A JP62264736A JP26473687A JPH01106514A JP H01106514 A JPH01106514 A JP H01106514A JP 62264736 A JP62264736 A JP 62264736A JP 26473687 A JP26473687 A JP 26473687A JP H01106514 A JPH01106514 A JP H01106514A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- angle
- coupling coefficient
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 21
- 238000010168 coupling process Methods 0.000 abstract description 21
- 238000005859 coupling reaction Methods 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は窒化アルミニム単結晶膜を用いた弾性表面波素
子に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a surface acoustic wave device using an aluminum nitride single crystal film.
（従来の技術）
弾性表面波素子は、小形で然も温度及び経年変化に対し
て安定である上、櫛形電極の形状を変えることによって
任意のフィルター特性が得ら−れる為、例えばテレビジ
ョン受像機のＩＰフィルター、衛星放送用ＩＦフィルタ
ー、ＶＴＲのＲＦコンバータ発信器等に広く応用されて
いる。(Prior art) Surface acoustic wave elements are small and stable against temperature and aging changes, and can obtain arbitrary filter characteristics by changing the shape of the comb-shaped electrode. It is widely applied to IP filters for machines, IF filters for satellite broadcasting, RF converter transmitters for VTRs, etc.
特に近年は、ポケットベル、自動車電話等に装備される
高周波用の弾性表面波素子の開発に大きな力が注がれて
おり、斯種弾性表面波素子として、高い弾性表面波伝播
速度が得られる素子窒化アルミニム単結晶Ｍ（以下、Ａ
ＩＮ膜という）を圧電膜として用いた弾性表面波素子が
注目されている（Ｉ Ｅ Ｅ Ｅ Ｔ ｒａｎｓａｃｔ
ｉｏｎ ｏｎ ５ｏｎｉｃｓ ａｎｄ Ｕ Ｉｔｒａｓ
ｏｎｉｃｓ、ｖｏｌ 、５Ｕ−３２，Ｎｏ５，５ｅｐｔ
ｅ＋ａｂｅｒ １９８５ Ｚ ｅｒｏ−Ｔｅｍｐｅｒａ
Ｌｕｒｅ−ｃｏｅｆｆｉｃｉｅｎＬ ＳＡＷ Ｄｅｖｉ
ｃｅｓ ｏｎＡＩＮ Ｅｐｉｔａｘｉａｌ Ｆ １ｎｎ
ｓ”）。Particularly in recent years, great efforts have been focused on the development of high-frequency surface acoustic wave devices used in pagers, car phones, etc., and this type of surface acoustic wave device can achieve a high surface acoustic wave propagation velocity. Element aluminum nitride single crystal M (hereinafter referred to as A
A surface acoustic wave device using an IN film as a piezoelectric film is attracting attention (I E E E T transact
ion on 5onics and U Itras
onics, vol, 5U-32, No5, 5ept
e+aver 1985 Z ero-Tempera
Lure-coefficienL SAW Devi
ces onAIN Epitaxial F 1nn
s”).
第１図はＡＩＮ膜を用いた弾性表面波素子の一例を示し
、基板（１）上にＡＩＮ膜（２）を形成し、該ＡＩＮ膜
（２）の表面に櫛形の送信電極（３）及び受信電極（４
）を対向配備している。弾性表面波は送信電極（３）か
ら受信電極（４）へ向かって矢印（５）の方向に伝播す
る。FIG. 1 shows an example of a surface acoustic wave device using an AIN film, in which an AIN film (2) is formed on a substrate (1), and a comb-shaped transmitting electrode (3) and a comb-shaped transmitting electrode (3) are formed on the surface of the AIN film (2). Receiving electrode (4
) are deployed facing each other. The surface acoustic wave propagates from the transmitting electrode (3) toward the receiving electrode (4) in the direction of the arrow (5).
く、解決しようとする問題点）
弾性表面波素子に於いては、電気エネルギーを弾性表面
波エネルギーに変換する際の効率を表わす電気機械結合
係数に２が出来るだけ大きいことが望ましい。例えば、
硝酸リチウム単結晶基板を用いた弾性表面波素子につい
ては、弾性表面波の伝播方向を適当に選ぶことによって
電気機械結合係数を改善することが提案されている（特
開昭５９−４３０９［ＨＯ３Ｈ９／２５］） 。(Problems to be Solved) In surface acoustic wave devices, it is desirable that the electromechanical coupling coefficient, which represents the efficiency of converting electrical energy into surface acoustic wave energy, be as large as possible. for example,
Regarding surface acoustic wave devices using lithium nitrate single crystal substrates, it has been proposed to improve the electromechanical coupling coefficient by appropriately selecting the propagation direction of the surface acoustic waves (Japanese Patent Laid-Open No. 59-4309 [HO3H9/ 25]).
しかし、ＡＩＮ膜を用いた弾性表面波素子については、
これまでに電気機械結合係数を改善するための研究が十
分に為されておらず、例えば前記Ｉ Ｅ Ｅ Ｅ Ｔｒ
ａｎｓａｃｔｉｏｎに開示された弾性表面波素子は、（
０１１２）［０Ｔ１１］のＡｂＯ３の基板上に（１１ヲ
０）［０００１１のＡＩＮ膜を形成したものであるが、
電気機械結合係数に２は高々０，８と低かった。However, for surface acoustic wave devices using AIN films,
Until now, sufficient research has not been conducted to improve the electromechanical coupling coefficient.
The surface acoustic wave device disclosed in the answer is (
0112) An AIN film of (11wo0)[00011] was formed on a substrate of AbO3 of [0T11],
The electromechanical coupling coefficient of 2 was as low as 0.8 at most.
（問題点を解決する為の手段）
本発明者は、ＡＩＮ膜を用いた弾性表面波素子の結合係
数を改善する為の研究を重ね、ＡＩＮ膜の結晶方位（Ｚ
軸）を圧電膜法線に対して傾けることにより、電気機械
結合係数が増大する方向に大きく変化することを理論的
に見出し、本発明の完成に至ったのである。(Means for Solving the Problems) The present inventor has conducted repeated research to improve the coupling coefficient of a surface acoustic wave device using an AIN film, and has determined the crystal orientation (Z) of the AIN film.
The inventors theoretically discovered that by tilting the piezoelectric film (axis) with respect to the normal line of the piezoelectric film, the electromechanical coupling coefficient changes greatly in the direction of increasing it, and this led to the completion of the present invention.
本発明に係る弾性表面波素子は、弾性表面波の伝播方向
をオイラー角表示で（λ、μ、θ）としたとき、θは従
来通り９０度に設定され、λは任意角度であるが、μは
３０〜１５０度の範囲に設定されていることを特徴とす
る。In the surface acoustic wave element according to the present invention, when the propagation direction of the surface acoustic wave is represented by Euler angles (λ, μ, θ), θ is set to 90 degrees as before, and λ is an arbitrary angle. A feature is that μ is set in a range of 30 to 150 degrees.
（作用及び効果）
ＡＩＮＨ！ＡＣ２＞の結晶方位とＡＩＮ膜の法線（基板
法線）が為す角度μを０度から１８０度の範囲で変化さ
せた場合、電気機械結合係数に２は、発明者が行なった
理論的な数値解析により、第３図に示す様に大きく変化
することが明らかとなった。(Action and effect) AINH! When the angle μ between the crystal orientation of AC2> and the normal to the AIN film (substrate normal) is varied in the range of 0 degrees to 180 degrees, the electromechanical coupling coefficient of 2 is determined by the inventor's theoretical theory. Numerical analysis revealed that there was a large change as shown in Figure 3.
本発明に係る弾性表面波素子に於いては、角度μが３０
度〜１８０度の範囲内に設定されているから、電気機械
結合係数は、従来の最大値である０、８よりも大きくな
る。In the surface acoustic wave element according to the present invention, the angle μ is 30
Since it is set within the range of 180 degrees to 180 degrees, the electromechanical coupling coefficient is larger than the conventional maximum values of 0 and 8.
（実施例）
第４図はオイラー角表示を用いた基板表示法を説明する
ものである。ここで、（Ｘ、Ｙ、Ｚ）は結晶軸を規定す
る座標系であり、Ｘ、は表面波伝播方向、Ｘ、は圧電膜
法線方向、Ｘ２はこれらに垂直な方向を表わしている。(Example) FIG. 4 explains a substrate display method using Euler angle display. Here, (X, Y, Z) is a coordinate system that defines the crystal axis, where X represents the surface wave propagation direction, X represents the normal direction of the piezoelectric film, and X2 represents the direction perpendicular to these.
基準方位を（０，０，０）としてｘ、＝ｘ、ｘ、＝ｙ、
Ｘ、＝Ｚに設定する。先ずＺ軸を中心にして、表面波伝
播方向Ｘ、及びＸ、をＸからＹ方向に向かって角度λだ
け回転させ、次に回転したＸ、軸を中心にして、回転し
たＸ、軸及びＸ５軸を角度μだけ反時計方向に回転させ
る。更に、回転したＸ３軸を中心にして、ｘＩ軸、Ｘ２
軸を反時計方向に角度θだけ回転させて得られる基板面
方位を含む弾性表面波伝播方向を（λ、μ、θ）で表わ
し、これをオイラー角表示というのである。When the reference direction is (0, 0, 0), x, = x, x, = y,
Set X,=Z. First, the surface wave propagation directions X, X, and Rotate the shaft counterclockwise by an angle μ. Furthermore, around the rotated X3 axis, the xI axis,
The surface acoustic wave propagation direction including the substrate surface orientation obtained by rotating the axis counterclockwise by an angle θ is expressed as (λ, μ, θ), and this is called the Euler angle representation.
尚、角度＾、μ、θは、夫々Ｏ〜１８０度の範囲で表示
され、１８０度だけ位相が異なる角度（λ＋１８０）、
（μ＋１８０）、（θ＋１８０）を包含する概念である
。Note that the angles ^, μ, and θ are each displayed in the range of O to 180 degrees, and the angles (λ+180) whose phases differ by 180 degrees,
This is a concept that includes (μ+180) and (θ+180).
第１図は本発明に係る弾性表面波素子の一実施例を示し
ており、サファイア、シリコン単結晶板、ガラス、或は
石英等で作製した基板（１）の上面にＡｆｆｉＮ膜（２
）が形成されている。ｉＮ膜（２）の弾性表面波の伝播
方向（７）は結晶軸のＸ軸と直交する方向に設定され、
オイラー角表示ではλ＝０、θ＝９０に設定されている
。FIG. 1 shows an embodiment of the surface acoustic wave device according to the present invention, in which an AffiN film (2
) is formed. The propagation direction (7) of the surface acoustic wave of the iN film (2) is set in a direction perpendicular to the X axis of the crystal axis,
In the Euler angle representation, λ=0 and θ=90 are set.
本発明を完成する過程で、発明者は、第１図に示す圧電
膜法１１（６）と結晶軸のＺ軸と為す角度μを０度から
１８０度の範囲で変化させ、電気機械結合係数の変化を
調べた。In the process of completing the present invention, the inventor changed the angle μ between the piezoelectric film method 11 (6) shown in FIG. 1 and the Z axis of the crystal axis in the range of 0 degrees to 180 degrees, and thereby We investigated changes in
電気機械結合係数の算出に際しては、例えば、Ｉ Ｅ
Ｅ Ｅ Ｔｒａｎｓａｃｔｉｏｎ ｏｎ ５ｏｎｉｃｓ
ａｎｄ Ｕ Ｉｔｒａｓｏｎｉｃｓ、ｖｏｌ、５ＩＪ
−１５，Ｎｏ４，０ｃｔｏｂｅｒ １９６８． ｐ
２０９−２１７“Ａ Ｍｅｔｈｏｄ ｆｏｒ Ｅ
ｓｔｉｍａｔｉｎｇ Ｏｐｔｉｍａｌ Ｃｒｙｓｔ
ａＩ Ｃｕｔｓ ａｎｄ Ｐｒｏｐａｇａｔｉｏｎ Ｄ
ｉｒｅｃｔｉｏｎ ｆｏｒ Ｅｘｃｉｔａｔｉｏｎ ｏ
ｆＰｉｅｚｏｅｌｅｃＬｒｉｃ ５ｕｒｆａｃｅ Ｗａ
ｖｅｓ”に開示された計算手法を用いることが出来る。When calculating the electromechanical coupling coefficient, for example, IE
E E Transaction on 5onics
and U Itrasonics, vol, 5IJ
-15, No4, 0ctober 1968. p
209-217 “A Method for E
stimulating Optimal Crystal
aI Cuts and Propagation D
irection for excitation o
fPiezoelecLric 5urface Wa
ves” can be used.
斯種計算手法は、ＡｅＮｌｌｉの異方性及び圧電性を考
慮した圧電基本式、ニュートンの運動方程式、マックス
ウェルの電磁方程式等を、数値解析により解くものであ
り、これによってＡＪＮ膜の表面を電気的に短絡したと
きの表面波伝播速度Ｖｎと、自由表面での伝播速度ｖｆ
とが算出される。This type of calculation method uses numerical analysis to solve the basic piezoelectric equation, Newton's equation of motion, Maxwell's electromagnetic equation, etc. that takes into account the anisotropy and piezoelectricity of AeNlli, and thereby the surface of the AJN film can be electrically The surface wave propagation velocity Vn when short-circuited and the propagation velocity vf on the free surface
is calculated.
第１図に示す弾性表面波素子に於いて、角度μをパラメ
ータとして両伝播速度Ｖｍ及びＶｆを計算した結果を第
２図に示す０図から明らかな様に、両伝播速度■ｅｅ及
びＶｆは角度μによって大きく変化している。In the surface acoustic wave element shown in FIG. 1, the results of calculating both propagation velocities Vm and Vf using the angle μ as a parameter are shown in FIG. It changes greatly depending on the angle μ.
電気機械結合係数は、“表面波デバイスとその応用”電
子材料工業会績、１６頁にも開示されている様に、次式
によって計算される。The electromechanical coupling coefficient is calculated by the following formula, as disclosed in "Surface Wave Devices and Their Applications", Electronic Materials Industry Report, p. 16.
Ｋ”＝２（Ｖｆ−Ｖ輪）／Ｖｆ
第２図のデータに対する電気機械結合係数に２の計算結
果を第３図に示す、同図から明らかな様に、角度μの変
化に対して結合係数には二つのピークが現われ、μが略
３０度から略１５０度の範囲で０．８を越える結合係数
が得られる。又、角度μの最適値は略５６度及び略１２
４度であって、そのときの結合係数に２は１．１２２と
なる。K"=2 (Vf - V-wheel)/Vf Figure 3 shows the calculation results of the electromechanical coupling coefficient of 2 for the data in Figure 2. As is clear from the figure, the coupling with respect to changes in the angle μ is shown in Figure 3. Two peaks appear in the coefficient, and a coupling coefficient exceeding 0.8 is obtained when μ ranges from approximately 30 degrees to approximately 150 degrees.The optimum value of the angle μ is approximately 56 degrees and approximately 12 degrees.
4 degrees, and the coupling coefficient at that time is 2, which is 1.122.
尚、ＡＩＮｍは大方晶系の結晶構造を有しており、Ｘ軸
とＹ軸とは弾性的に等価であるから、オイラー角表示の
角度λが０〜１８０度の範囲で変化しても、結合係数は
変わらない、又、角度θは従来通り９０度に設定されて
いるが、発明者は、角度θをパラメータとして、上記同
様に電気機械結合係数を計算し、θ＝９０が最適値であ
ることを確認している。Note that AINm has a macrogonal crystal structure, and the X-axis and Y-axis are elastically equivalent, so even if the angle λ in Euler angle changes within the range of 0 to 180 degrees, Although the coupling coefficient remains unchanged and the angle θ is set to 90 degrees as before, the inventor calculated the electromechanical coupling coefficient using the angle θ as a parameter in the same manner as above, and found that θ = 90 is the optimal value. We have confirmed that there is.
従って、ＡｌＮ１１４を用いた弾性表面波素子に於いて
は、弾性表面波の伝播方向をオイラー角表示で（＾、μ
、９０）としたとき、λを０〜１８０度、μを３０〜１
５０度の範囲に設定することにより、更に望ましくはμ
を５６度或は１２４度に近い値に設定することにより、
従来よりも性能の良い弾性表面波素子が得られる。Therefore, in a surface acoustic wave device using AlN114, the propagation direction of the surface acoustic wave is expressed in Euler angles (^, μ
, 90), λ is 0 to 180 degrees, μ is 30 to 1
More preferably, μ
By setting the angle to a value close to 56 degrees or 124 degrees,
A surface acoustic wave element with better performance than conventional ones can be obtained.
この様なＡＩＮ膜（２）の形成には、周知のＣＶＤ法や
スパッタ法を用いることが出来る。The well-known CVD method or sputtering method can be used to form such an AIN film (2).
ＣＶＤ法の主流であるＭ Ｏ−ＣＶ Ｄ （ｍｅｔａｌ
ｏｒｇａｎｉｃ ｃｈｅｍｉｃａｌ ｖａｐｏｒ ｄｅ
ｐｏｓｉｔｏｎ）を用いる場合は、例えばサファイア単
結晶の基板上に、オイラー角表示で（０，０，θ）（所
謂２カツト）、或は（４５，９０゜９０）のＡＩＮ膜を
形成した後、該ＡｌＮｐ／：４の表面をダイヤモンド砥
粒により所定の角度に研磨するのである。又、スパッタ
法を用いる場合は、スパッタ蒸着装置に於いて、カソー
ド電極からアノード電極へ向かうスパッタリング方向に
対し、ＡＩＮ膜を形成すべき基板を適切な角度だけ傾け
て配置することにより、Ｚ軸が傾いた本発明のＡＩＮ膜
を形成出来る。MO-CVD (metal
organic chemical vapor
When using a sapphire single crystal substrate, for example, after forming an AIN film with Euler angles of (0, 0, θ) (so-called 2 cuts) or (45, 90° 90), The surface of the AlNp/:4 is polished to a predetermined angle using diamond abrasive grains. In addition, when using the sputtering method, the Z-axis can be adjusted by tilting the substrate on which the AIN film is to be formed by an appropriate angle with respect to the sputtering direction from the cathode electrode to the anode electrode in the sputter deposition apparatus. A tilted AIN film of the present invention can be formed.
尚、本発明の各部構成は上記実施例に限らず、特許請求
の範囲に記載の技術的範囲内で種々の変形が可能である
ことは勿論である。It should be noted that the configuration of each part of the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made within the technical scope of the claims.
第１図は本発明に係る弾性表面波素子の斜面図、第２図
は弾性表面波伝播速度の変化を示すグラフ、第３図は電
気機械結合係数の変化を示すグラフ、第４図はオイラー
角表示の説明図である。
（１）・・・基板 （２）・・・ＡＩＮＩＩ
ＩＸ、Ｙ、Ｚ・・・結晶軸 （６）・・・圧電膜法
線０ ２０ ４０ ６０ ８０ １００１２０ １４０
１６０ １８０ （度）手続補正書〔自発〕
昭和６２年１２月１７日
１、事件の表示 特願昭６２−２６４７３６２、発明
の名称 弾性表面波素子
３、補正をする者 出願人
（１１８）三洋電機株式会社
５、補正の対象
（２） 明細書第３頁１４行目、１５行目「０．８と
低かった。」を
「０．８％と低かった。１に補正。
（３） 明ＩＩ書第４頁１６行目、１７行目「０，８
よりも」を
「０．８％よりも１に補正。
（４）明細書第７頁１４行目
「０．８を越える」を−
ｒｏ、８％を越えるｊに補正。
（５）明細書第７頁１６行目
ｒｌ、１２２となる。」を
ｒｌ、１２２％となる。１に補正。
以上FIG. 1 is a slope view of the surface acoustic wave device according to the present invention, FIG. 2 is a graph showing changes in surface acoustic wave propagation velocity, FIG. 3 is a graph showing changes in electromechanical coupling coefficient, and FIG. 4 is an Eulerian graph showing changes in electromechanical coupling coefficient. FIG. 3 is an explanatory diagram of corner display. (1)...Substrate (2)...AINII
IX, Y, Z...Crystal axis (6)...Piezoelectric film normal line 0 20 40 60 80 100120 140
160 180 (degree) Procedural amendment [voluntary] December 17, 1988 1, Indication of case: Japanese Patent Application No. 62-2647362, Title of invention: Surface acoustic wave device 3, Person making the amendment: Applicant (118) Sanyo Electric Co., Ltd. Co., Ltd. 5, subject of amendment (2) Page 3 of the specification, lines 14 and 15, “It was as low as 0.8.” Amended to “It was as low as 0.8%. 1.” (3) Mei II Page 4, lines 16 and 17 “0,8
``More than 0.8%'' is corrected to ``1 than 0.8%.'' (4) Page 7, line 14 of the specification, ``More than 0.8'' is corrected to -ro, j that exceeds 8%. (5) Page 7, line 16 of the specification rl, 122. ” is rl, which is 122%. Corrected to 1. that's all
Claims (1)
表面波素子に於いて、弾性表面波の伝播方向をオイラー
角表示で（λ，μ，９０）としたとき、μを３０〜１５
０度の範囲に設定したことを特徴とする弾性表面波素子
。 ２ μは略５６度又は略１２４度に設定されている特許
請求の範囲第１項に記載の弾性表面波素子。[Claims] 1. In a surface acoustic wave device using an aluminum nitride single crystal film as a piezoelectric film, when the propagation direction of the surface acoustic wave is expressed in Euler angles (λ, μ, 90), μ is 30-15
A surface acoustic wave element characterized in that the surface acoustic wave element is set in a range of 0 degrees. 2. The surface acoustic wave element according to claim 1, wherein .mu. is set to approximately 56 degrees or approximately 124 degrees.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62264736A JPH01106514A (en) | 1987-10-19 | 1987-10-19 | Surface acoustic wave element |
| US07/259,557 US4868444A (en) | 1987-10-19 | 1988-10-18 | Surface acoustic wave device |
| KR1019880013563A KR970004619B1 (en) | 1987-10-19 | 1988-10-18 | Surface acoustic wave device |
| DE3887813T DE3887813T2 (en) | 1987-10-19 | 1988-10-19 | Surface acoustic wave arrangement. |
| EP88117412A EP0313025B1 (en) | 1987-10-19 | 1988-10-19 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62264736A JPH01106514A (en) | 1987-10-19 | 1987-10-19 | Surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01106514A true JPH01106514A (en) | 1989-04-24 |
Family
ID=17407455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62264736A Pending JPH01106514A (en) | 1987-10-19 | 1987-10-19 | Surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01106514A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388406A (en) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | Surface acoustic wave element |
| JPH0998058A (en) * | 1995-09-29 | 1997-04-08 | Sanyo Electric Co Ltd | Surface acoustic wave device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5859616A (en) * | 1981-10-05 | 1983-04-08 | Nobuo Mikoshiba | Surface acoustic wave element |
| JPS5864815A (en) * | 1981-10-14 | 1983-04-18 | Nobuo Mikoshiba | Surface acoustic wave element |
-
1987
- 1987-10-19 JP JP62264736A patent/JPH01106514A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5859616A (en) * | 1981-10-05 | 1983-04-08 | Nobuo Mikoshiba | Surface acoustic wave element |
| JPS5864815A (en) * | 1981-10-14 | 1983-04-18 | Nobuo Mikoshiba | Surface acoustic wave element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388406A (en) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | Surface acoustic wave element |
| JPH0998058A (en) * | 1995-09-29 | 1997-04-08 | Sanyo Electric Co Ltd | Surface acoustic wave device |
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