JPH01100426A - Array like pyroelectric type infrared detector - Google Patents
Array like pyroelectric type infrared detectorInfo
- Publication number
- JPH01100426A JPH01100426A JP62258876A JP25887687A JPH01100426A JP H01100426 A JPH01100426 A JP H01100426A JP 62258876 A JP62258876 A JP 62258876A JP 25887687 A JP25887687 A JP 25887687A JP H01100426 A JPH01100426 A JP H01100426A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- vapor deposition
- pyroelectric
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、温度計測、地球資源観測、気象観測、公害監
視、防犯、防災監視、交通機関の運転管理、工場での熱
管理工程などの赤外計測に使用されるアレイ状焦電形赤
外検出素子に関するものである。[Detailed Description of the Invention] Industrial Application Fields The present invention is applicable to infrared rays for temperature measurement, earth resource observation, weather observation, pollution monitoring, crime prevention, disaster prevention monitoring, operation management of transportation facilities, heat management processes in factories, etc. This invention relates to an array of pyroelectric infrared detection elements used for measurement.
従来の技術
赤外検出素子は、感度及び空間分解能特性の向上が期待
され、焦電素子の薄膜化もその一つである。例えば酸化
マグネシウム（Ｍｇｏ）単結晶上にチタン酸鉛（ＰＴＯ
）系蒸着膜をスパッタリング蒸着法により形成し、高い
感度の赤外検出素子が得られている。Conventional infrared detection elements are expected to have improved sensitivity and spatial resolution characteristics, and one example of such improvements is the thinning of pyroelectric elements. For example, lead titanate (PTO) is placed on magnesium oxide (Mgo) single crystal.
) system vapor deposition film is formed by sputtering vapor deposition method, and a highly sensitive infrared detection element has been obtained.
本出願人はこれをアレイ化したものとして、第３図に示
すような構造のアレイ状焦電形赤外検出素子を先に特許
出願した（％願昭６１−２２４４８６ ）。The present applicant previously filed a patent application for an arrayed pyroelectric infrared detection element having a structure as shown in FIG. 3 (%Application No. 61-224486).
この赤外検出器は、−枚板の蒸着基板材１１の上に、裏
面電極２、蒸着薄膜３、受光電極４をこの順で蒸着し、
しかる後、感度向上のため、熱の逃げの原因になる有感
部の蒸着基板材１１を蝕刻法によりアレイ状に除去して
、第３図に示すような蒸着基板１をもつアレイ状焦電素
子が得られる。This infrared detector has a back electrode 2, a deposited thin film 3, and a light receiving electrode 4 deposited in this order on a single plate of deposited substrate material 11,
After that, in order to improve the sensitivity, the vapor-deposited substrate material 11 of the sensitive part, which causes heat escape, is removed in an array shape by etching, and an array-shaped pyroelectric material having the vapor-deposited substrate 1 as shown in FIG. An element is obtained.
これを、裏面にある互いに分離された各電極２と、半導
体基板８の信号読み出し部７を裏面電極引出し電極５に
より電気的に接続しつつ、前記アレイ状焦電素子と半導
体基板８と貼り合わせて、アレイ状焦電形赤外検出器が
完成する。６はインジウム接合部である。This is bonded to the arrayed pyroelectric element and the semiconductor substrate 8 while electrically connecting each of the electrodes 2 on the back side, which are separated from each other, and the signal readout section 7 of the semiconductor substrate 8 through the back side electrode extraction electrode 5. As a result, an arrayed pyroelectric infrared detector is completed. 6 is an indium junction.
発明が解決しようとする問題点
しかしながら、従来のアレイ状焦電形赤外検出器には次
のような問題点がある。即ち、赤外検出器の機械的強度
を保つため、枠状基板の厚さが十分必要であるが、前記
蝕刻の出来る深さには限度があり、せいぜい５０μｍ程
度しか厚くできない。Problems to be Solved by the Invention However, the conventional arrayed pyroelectric infrared detector has the following problems. That is, in order to maintain the mechanical strength of the infrared detector, the frame-shaped substrate must be sufficiently thick, but there is a limit to the depth at which the etching can be performed, and the thickness can only be increased to about 50 μm at most.
そこで、この機械的強度不足を半導体基板との貼り合わ
せで補っているのであるが、それは片面だけの貼り合わ
せなので、補強として十分でない。Therefore, this lack of mechanical strength is compensated for by bonding with a semiconductor substrate, but since this is bonding only on one side, it is not sufficient as reinforcement.
そこで、赤外入射側に窓板又は赤外フィルタを貼り付け
ることにより両面から、チンドイッチ状にアレイ状焦電
素子をはさみ込むことが望ましいと考えられる。しかし
、その場合、窓板又は赤外フィルタが、赤外受光電極４
を介して蒸着薄膜３と接してしまい、熱の逃げ場が出来
たことになり、感度に著しい悪影響を与えるという問題
点がある。Therefore, it is considered desirable to sandwich the arrayed pyroelectric elements from both sides in a diagonal pattern by attaching a window plate or an infrared filter to the infrared incident side. However, in that case, the window plate or the infrared filter
There is a problem in that the evaporated thin film 3 comes into contact with the evaporated thin film 3 through the wafer, creating a place for heat to escape, which has a significant negative effect on sensitivity.
本発明は上記従来のアレイ状焦電形赤外検出器の問題点
に鑑み、赤外感度を損なわずに、機械的強度の向上を実
現したアレイ状焦電形赤外検出器の提供を目的とするも
のである。In view of the above-mentioned problems of the conventional arrayed pyroelectric infrared detector, an object of the present invention is to provide an arrayed pyroelectric infrared detector that achieves improved mechanical strength without impairing infrared sensitivity. That is.
問題点を解決するための手段
上記問題点を解決するために、本発明は、蒸着基板と焦
電形蒸着薄膜と蒸着薄膜の有効受光面上の第１の電極及
び裏面の第２の電極と信号読み出しのための半導体基板
とを備え、少なくとも有効受光面の部分において蒸着基
板材が除去されて枠型蒸着基板が形成され、蒸着薄膜の
有効受光面位置において、前記蒸着薄膜、第１の電極及
び第２の電極が、前記枠型蒸着基板の桟の中央レベル位
置で形成され、赤外入射窓板が前記桟の上端レベル位置
で枠型蒸着基板に直接又は間接的に貼り合わされ、有効
受光面位置における第１の電極と赤外入射窓板との間に
空間が形成されるとともに、前記桟の下端レベル位置で
前記半導体基板が蒸着基板に直接又は間接的に貼り合わ
され、有効受光面位置における第２の電極と半導体基板
との間に空間が形成されているものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a vapor deposition substrate, a pyroelectric vapor deposited thin film, a first electrode on the effective light-receiving surface of the vapor deposited thin film, and a second electrode on the back surface. A frame-shaped evaporation substrate is formed by removing the evaporation substrate material from at least a portion of the effective light-receiving surface, and at the position of the effective light-reception surface of the evaporation thin film, the evaporation thin film, the first electrode and a second electrode is formed at the center level of the crosspiece of the frame-shaped vapor deposition substrate, and an infrared incidence window plate is bonded directly or indirectly to the frame-type vapor deposition substrate at the upper end level of the crosspiece, so that effective light reception is achieved. A space is formed between the first electrode and the infrared incidence window plate at the surface position, and the semiconductor substrate is directly or indirectly bonded to the vapor deposition substrate at the lower end level position of the crosspiece, and the effective light receiving surface position is A space is formed between the second electrode and the semiconductor substrate.
作 用
上記構造において、本発明は、窓板と半導体基板で両面
から枠状基板付アレイ状焦電素子をはさむことにより、
その機械的強度は飛躍的に向上し、しかも窓板と半導体
基板は有感部に直接接触しないので赤外検出感度を損な
うことはない。Function In the above-mentioned structure, the present invention sandwiches an array-shaped pyroelectric element with a frame-shaped substrate from both sides between the window plate and the semiconductor substrate, thereby
Its mechanical strength has been dramatically improved, and since the window plate and semiconductor substrate do not come into direct contact with sensitive parts, infrared detection sensitivity is not impaired.
実施例
以下に本発明を、その実施例を示す図面に基づき詳細に
説明する。EXAMPLES The present invention will be explained in detail below based on drawings showing examples thereof.
第１図（ａ）は本発明に係るアレイ状焦電形赤外検出器
の断面図である。１は格子状枠体の蒸着基板で、例えば
酸化マグネシウム単結晶からなる。FIG. 1(a) is a sectional view of an arrayed pyroelectric infrared detector according to the present invention. Reference numeral 1 denotes a vapor deposition substrate in the form of a lattice frame, which is made of, for example, magnesium oxide single crystal.
２は結晶の格子定数が焦電形蒸着薄膜３と同程度の白金
の裏面電極（第２電極）、３は焦電形蒸着薄膜で、例え
ばチタン酸鉛（ＰＴＯ）系スパッタ蒸着配向膜からなる
。４はニクロム等の赤外受光電極（第１電極）である。2 is a back electrode (second electrode) of platinum whose crystal lattice constant is similar to that of the pyroelectric vapor deposited thin film 3; 3 is a pyroelectric vapor deposited thin film, which is made of, for example, a lead titanate (PTO)-based sputter-deposited alignment film. . 4 is an infrared receiving electrode (first electrode) made of nichrome or the like.
窓板１０は、例えばゲルマニウムからなり、半導体基板
８は、例えば電荷転送形デバイスからなる。蒸着薄膜３
の有効受光面は、枠状蒸着基板１の桟１２の中央レベル
位置に位置する。そのため、赤外入射側からみて有効受
光面における赤外受光電極４は凹んでいる。、前記窓板
１０はその桟１２の上端レベル位置に存在する。また、
前記半導体基板８はその桟１２の下端レベル位置に存在
する。そのため窓板１０と赤外受光電極４との間及び半
導体基板８と裏面電極２との間には空間部Ｘ及びＹが存
在する。The window plate 10 is made of, for example, germanium, and the semiconductor substrate 8 is made of, for example, a charge transfer type device. Vapor deposited thin film 3
The effective light-receiving surface of is located at the center level of the crosspiece 12 of the frame-shaped vapor deposition substrate 1. Therefore, the infrared light-receiving electrode 4 on the effective light-receiving surface is recessed when viewed from the infrared incident side. , the window plate 10 is located at the upper end level of the crosspiece 12. Also,
The semiconductor substrate 8 is located at the lower end level of the crosspiece 12. Therefore, spaces X and Y exist between the window plate 10 and the infrared receiving electrode 4 and between the semiconductor substrate 8 and the back electrode 2.
第１図（ｂ）は、本発明アレイ状焦電形赤外検出器の平
面図であってＡＡ’線に沿う断面は第１図（ａ）に示さ
れる。FIG. 1(b) is a plan view of the arrayed pyroelectric infrared detector of the present invention, and a cross section taken along line AA' is shown in FIG. 1(a).
次に、本発明アレイ状焦電形赤外検出器の製造方法を説
明する。第２図に示すように、酸化マグネシウム（Ｍｇ
ｏ ）単結晶からなる厚さ５０μｍの一枚板状の蒸着基
板材１１を、０．１Ｗ平方ピツチで、７５μｍ平方の有
感部に相当する部分を１２８ Ｘ １２８個、２次元ア
レイ状に、２５μｍの深さで凹状に蝕刻により掘り下げ
る。次に、蝕刻された面の有感部のみ、あるいは、有感
部より若干広い部分のみに、裏面電極２としての白金電
極をスパッタリング蒸着する。その後、全面にチタン酸
鉛系薄膜（厚さ４μｍ）をスパッタリング蒸着し蒸着薄
膜３を形成する。更に、その上に赤外受光電極４として
ニクロムを全面蒸着する。これにより、共通電極が形成
される。Next, a method for manufacturing the arrayed pyroelectric infrared detector of the present invention will be explained. As shown in Figure 2, magnesium oxide (Mg
o) A single plate-shaped vapor deposition substrate material 11 made of single crystal and having a thickness of 50 μm was formed into a two-dimensional array of 128 x 128 parts corresponding to 75 μm square sensitive parts at a 0.1 W square pitch, Dig into a concave shape by etching to a depth of 25 μm. Next, a platinum electrode as the back electrode 2 is deposited by sputtering only on the sensitive part of the etched surface or only on a part slightly wider than the sensitive part. Thereafter, a lead titanate thin film (thickness: 4 μm) is deposited on the entire surface by sputtering to form a deposited thin film 3. Furthermore, nichrome is deposited on the entire surface as an infrared light-receiving electrode 4. This forms a common electrode.
次に、第２図に示すような状態のＭｇｏ基板材１１を中
央部７５μｍ平方の部分のみ、アレイ配置の各素子に対
応する位置を裏面側から蝕刻除去する。Next, the Mgo substrate material 11 in the state shown in FIG. 2 is etched away from the back side only at a 75 μm square area in the center, at positions corresponding to each element in the array arrangement.
このようにして、第１図（ａ）に示す枠状蒸着基板１が
形成される。In this way, the frame-shaped vapor deposition substrate 1 shown in FIG. 1(a) is formed.
次に、第１図（ｂ）に示すように信号引出し電極５であ
るアルミニウムを白金の電極２に重ねて蒸着し、枠状Ｍ
ｇｏ蒸着基板１の下頂部から信号を取り出せるようにす
る。このアルミニウム蒸着膜５と半導体基板８の信号読
み出し部７を電気的、機械的に接続させるためインシュ
ウムロを両方；二それぞれ２μｍの厚さに蒸着し、半導
体基板８を蒸着基板１に１７０℃で熱圧着する。Next, as shown in FIG. 1(b), aluminum, which is the signal extraction electrode 5, is deposited over the platinum electrode 2, and a frame-shaped M
A signal can be extracted from the lower top of the Go vapor deposition substrate 1. In order to electrically and mechanically connect this aluminum evaporation film 5 and the signal readout part 7 of the semiconductor substrate 8, two layers of aluminum are evaporated to a thickness of 2 μm each, and the semiconductor substrate 8 is heated at 170°C on the evaporation substrate 1. Crimp.
−力受光側は接着剤９で、ゲルマニウム窓板１０を蒸着
基板１に接着する。この窓板１０は、必要に応じて赤外
フィルタとしてもよい。なお、両面ともに空気抜きの孔
を任意の場所に形成すれば、真空封入の際に有効である
。- On the power receiving side, the germanium window plate 10 is bonded to the vapor deposition substrate 1 using an adhesive 9. This window plate 10 may be used as an infrared filter if necessary. Note that it is effective for vacuum sealing if air vent holes are formed at arbitrary locations on both sides.
以上の実施例により、機械的強度を大幅に増大し、耐振
性を従来の４倍とし、耐音響特性を１００倍向上させた
アレイ状焦電形赤外検出器を完成することができた。Through the above embodiments, it was possible to complete an arrayed pyroelectric infrared detector with significantly increased mechanical strength, four times the vibration resistance, and 100 times the acoustic resistance.
発明の効果
本発明に係るアレイ状焦電形赤外検出器は、基板材の有
感部の受光側を凹状にし、電極及び焦電蒸着膜を蒸着後
、基板材裏面の有感部を除去し、赤外入射側には窓板を
、裏面信号取り出し電極側には半導体基板を貼り合わせ
ることにより、受光側、裏面側ともに空間部を介在せし
め、感度特性を損なわず、しかも機械強度が大幅に増大
したものであって、耐振性、耐音響特性も優れたもので
ある。Effects of the Invention In the arrayed pyroelectric infrared detector according to the present invention, the light-receiving side of the sensitive part of the substrate material is made concave, and after depositing the electrode and pyroelectric vapor deposition film, the sensitive part on the back surface of the substrate material is removed. However, by bonding a window plate on the infrared incident side and a semiconductor substrate on the back side of the signal extraction electrode, a space is provided on both the light receiving side and the back side, without impairing the sensitivity characteristics, and the mechanical strength is significantly increased. It has increased vibration resistance and sound resistance.
第１図（ａ）は本発明に係るアレイ状焦電形赤外検出器
の一実施例を示す断面図、第１図（ｂ）は同素子の平面
図、第２図は同素子の基板材の裏面側を蝕刻する前の状
態を示す断面図、第３図は従来のアレイ状焦電形赤外検
出器の断面図である。
１・・・蒸着基板、２・・・裏面電極、３・・・焦電形
蒸着薄膜、４・・・受光電極、５・・・裏面電極引出し
電極、６１８．インジウム接合、７・・・半導体基板の
信号読み出し部、８・・・半導体基板、９・・・接着部
、１０・・・窓板、１１・・・蒸着基板材、１２・・・
桟。FIG. 1(a) is a sectional view showing one embodiment of the arrayed pyroelectric infrared detector according to the present invention, FIG. 1(b) is a plan view of the same element, and FIG. 2 is a basic diagram of the same element. FIG. 3 is a cross-sectional view showing a state before the back side of the plate material is etched, and FIG. 3 is a cross-sectional view of a conventional array-type pyroelectric infrared detector. DESCRIPTION OF SYMBOLS 1... Vapor deposition substrate, 2... Back electrode, 3... Pyroelectric vapor deposited thin film, 4... Light receiving electrode, 5... Back electrode extraction electrode, 618. Indium junction, 7... Signal readout part of semiconductor substrate, 8... Semiconductor substrate, 9... Adhesive part, 10... Window plate, 11... Evaporation substrate material, 12...
Crosspiece.
Claims (5)
面上の第１の電極及び裏面の第２の電極と信号読み出し
のための半導体基板とを備え、少なくとも有効受光面の
部分において蒸着基板材が除去されて枠型蒸着基板が形
成され、蒸着薄膜の有効受光面位置において、前記蒸着
薄膜、第１の電極及び第２の電極が、前記枠型蒸着基板
の桟の中央レベル位置で形成され、赤外入射窓板が前記
桟の上端レベル位置で枠型蒸着基板に直接又は間接的に
貼り合わされ、有効受光面位置における第１の電極と赤
外入射窓板との間に空間が形成されるとともに、前記桟
の下端レベル位置で前記半導体基板が蒸着基板に直接又
は間接的に貼り合わされ、有効受光面位置における第２
の電極と半導体基板との間に空間が形成されていること
を特徴とするアレイ状焦電形赤外検出器。(1) A vapor deposition substrate, a pyroelectric vapor deposited thin film, a first electrode on the effective light receiving surface of the vapor deposited thin film, a second electrode on the back surface, and a semiconductor substrate for signal readout, at least in a portion of the effective light receiving surface. The vapor deposition substrate material is removed to form a frame-shaped vapor deposition substrate, and at the position of the effective light-receiving surface of the vapor-deposited thin film, the vapor-deposited thin film, the first electrode, and the second electrode are located at the center level of the frame of the frame-shaped vapor deposition substrate. The infrared incidence window plate is directly or indirectly bonded to the frame-shaped vapor deposition substrate at the upper end level position of the crosspiece, and there is a space between the first electrode and the infrared incidence window plate at the effective light receiving surface position. is formed, and the semiconductor substrate is directly or indirectly bonded to the vapor deposition substrate at the lower end level position of the crosspiece, and the second
An arrayed pyroelectric infrared detector characterized in that a space is formed between the electrode and the semiconductor substrate.
膜であることを特徴とする特許請求の範囲第１項記載の
アレイ状焦電形赤外検出器。(2) The arrayed pyroelectric infrared detector according to claim 1, wherein the evaporation substrate is a single crystal, and the pyroelectric evaporation thin film is an alignment film.
形蒸着膜がチタン酸鉛系配向膜であることを特徴とする
特許請求の範囲第１項記載のアレイ状焦電形赤外検出器
。(3) The arrayed pyroelectric infrared detector according to claim 1, wherein the vapor deposition substrate is a magnesium oxide single crystal, and the pyroelectric vapor deposition film is a lead titanate-based alignment film. .
する特許請求の範囲第１項記載のアレイ状焦電形赤外検
出器。(4) The arrayed pyroelectric infrared detector according to claim 1, wherein the infrared entrance window plate is an infrared filter.
デバイスであることを特徴とする特許請求の範囲第１項
記載のアレイ状焦電形赤外検出器。(5) The arrayed pyroelectric infrared detector according to claim 1, wherein the semiconductor substrate having a signal readout function is a charge transfer device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258876A JPH01100426A (en) | 1987-10-14 | 1987-10-14 | Array like pyroelectric type infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258876A JPH01100426A (en) | 1987-10-14 | 1987-10-14 | Array like pyroelectric type infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01100426A true JPH01100426A (en) | 1989-04-18 |
Family
ID=17326264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62258876A Pending JPH01100426A (en) | 1987-10-14 | 1987-10-14 | Array like pyroelectric type infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01100426A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010073287A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor and method for manufacturing infrared sensor |
| WO2010073286A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor |
| WO2010073288A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor and infrared sensor manufacturing method |
| WO2011039797A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Mems sensor |
| WO2011039798A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Mems sensor and sensor array equipped with same |
| WO2011039799A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Sensor array |
-
1987
- 1987-10-14 JP JP62258876A patent/JPH01100426A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010073287A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor and method for manufacturing infrared sensor |
| WO2010073286A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor |
| WO2010073288A1 (en) * | 2008-12-22 | 2010-07-01 | パイオニア株式会社 | Infrared sensor and infrared sensor manufacturing method |
| JPWO2010073288A1 (en) * | 2008-12-22 | 2012-05-31 | パイオニア株式会社 | Infrared sensor and method of manufacturing infrared sensor |
| WO2011039797A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Mems sensor |
| WO2011039798A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Mems sensor and sensor array equipped with same |
| WO2011039799A1 (en) * | 2009-09-29 | 2011-04-07 | パイオニア株式会社 | Sensor array |
| JPWO2011039798A1 (en) * | 2009-09-29 | 2013-02-21 | パイオニア株式会社 | MEMS sensor and sensor array including the same |
| JPWO2011039797A1 (en) * | 2009-09-29 | 2013-02-21 | パイオニア株式会社 | MEMS sensor |
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