JPH01100086A - Single crystal pulling-up apparatus - Google Patents
Single crystal pulling-up apparatusInfo
- Publication number
- JPH01100086A JPH01100086A JP25675887A JP25675887A JPH01100086A JP H01100086 A JPH01100086 A JP H01100086A JP 25675887 A JP25675887 A JP 25675887A JP 25675887 A JP25675887 A JP 25675887A JP H01100086 A JPH01100086 A JP H01100086A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- cylinder
- reflector
- main body
- quartz crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009833 condensation Methods 0.000 abstract description 4
- 230000005494 condensation Effects 0.000 abstract description 4
- 239000012768 molten material Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 238000011179 visual inspection Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、チョクラルスキー法によって単結晶を引上げ
成長させる１１１結晶引上装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a 111 crystal pulling apparatus for pulling and growing a single crystal by the Czochralski method.
従来、この種の単結晶引上装置としては、ルツボの縁か
ら外方へ突出している上部の平たい環状リムと、この環
状リムに取付けられ、内側の縁から円筒形状に下方に傾
斜しているまたは円錐状に先細りになっている連結部と
からなるカバー装置によって、ルツボとルツボ内に含ま
れる半導体溶融物とを部分的に被覆するものが知られて
いる（特公昭５７−４０１１９号公報参照）。Conventionally, this type of single crystal pulling device has an upper flat annular rim protruding outward from the edge of the crucible, and a cylindrical shape attached to the annular rim that slopes downward in a cylindrical shape from the inner edge. Alternatively, a cover device is known in which a crucible and a semiconductor melt contained in the crucible are partially covered by a cover device consisting of a conically tapered connecting portion (see Japanese Patent Publication No. 57-40119). ).
しかしながら、上記従来の単結晶引上装置にあっては、
円筒部上部の平たい環状リムの下面部において、融体か
ら発生した一酸化ケイ素（Ｓｉ Ｏ）の凝縮が起こり、
固体化した粒子が溶融物表面に落下して単結晶化を阻害
するという問題があると共に、ルツボの内周壁部付近の
溶融物表面が上記環状リムによって覆われているから、
外部からその状況が観察できないという問題がある。However, in the above-mentioned conventional single crystal pulling apparatus,
Condensation of silicon monoxide (SiO) generated from the melt occurs on the lower surface of the flat annular rim at the top of the cylinder.
There is a problem that solidified particles fall onto the surface of the melt and inhibit single crystallization, and the surface of the melt near the inner peripheral wall of the crucible is covered by the annular rim.
The problem is that the situation cannot be observed from the outside.
本発明は、上記事情に鑑みてなされたもので、その目的
とするところは、ルツボ内の溶融物から発生した一酸化
ケイ素の凝縮が起こりにくく、固体化した粒子が溶融物
表面に落トすることを抑制できて、単結晶化を阻害する
要因を未然に排除できると共に、ルツボの内周壁部イ」
近の溶融物表面の目視が容易な単結晶引上装置を提供す
ることにある。The present invention was made in view of the above circumstances, and its purpose is to prevent silicon monoxide generated from the melt in the crucible from condensing easily, and to prevent solidified particles from falling onto the surface of the melt. In addition to eliminating factors that inhibit single crystallization, the inner peripheral wall of the crucible can be
An object of the present invention is to provide a single crystal pulling device that allows easy visual inspection of the surface of a nearby melt.
上記目的を達成するために、本発明は、円筒部とこの円
筒部の下端に続いて内方に先細りした傾斜筒部とを一体
形成した又は分割組立てたリフレクタ本体と、このリフ
レクタ本体の円筒部の上端縁に設けられ、かつ保温筒の
上部に支持された複数の係止部とを備えたものである。In order to achieve the above object, the present invention provides a reflector body in which a cylindrical portion and an inclined cylindrical portion that tapers inward following the lower end of the cylindrical portion are integrally formed or assembled separately, and a cylindrical portion of the reflector body. and a plurality of locking portions provided on the upper edge of the heat retaining cylinder and supported by the upper portion of the heat retaining cylinder.
本発明の単結晶用−Ｆ装置にあっては、リフレクタ本体
を複数の係止部によって支持しているから、各係止部間
を通って流れる気体の流れによって一酸化ケイ素の凝縮
が生じにくい上に、各係止部間の間隙を通してルツボ内
壁の溶融物の表面°を視認できる。In the -F device for single crystals of the present invention, since the reflector main body is supported by a plurality of locking portions, silicon monoxide is less likely to condense due to the flow of gas flowing between the locking portions. Above, the surface of the molten material on the inner wall of the crucible can be seen through the gaps between the respective locking parts.
以下、第１図ないし第４図に基づいて本発明の詳細な説
明する。Hereinafter, the present invention will be explained in detail based on FIGS. 1 to 4.
第１図と第２図は本発明の一実施例を示すもので、第１
図は概略構成図、第２図はリフレクタの平面図である。Figures 1 and 2 show one embodiment of the present invention.
The figure is a schematic configuration diagram, and FIG. 2 is a plan view of the reflector.
これらの図において符号１は炉本体であり、この炉本体
１のほぼ中央部には石英ルツボ２が設けられている。そ
して、石英ルツボ２は、黒鉛サセプタ２′を介して回転
自在な下軸３に取付けられている。また、上記石英ルツ
ボ２の周囲には、上記石英ルツボ２内のシリコン融液４
の温度を制御するヒータ５が設置されると共に、このヒ
ータ５と炉本体１との間には、保温筒６が配置されてい
る。そして、この保温筒６の上面には、リング状の支持
部材７が設けられており、この支持部材７にリフレクタ
８が支持されている。In these figures, reference numeral 1 denotes a furnace body, and a quartz crucible 2 is provided approximately in the center of this furnace body 1. The quartz crucible 2 is attached to a rotatable lower shaft 3 via a graphite susceptor 2'. Further, around the quartz crucible 2, there is a silicon melt 4 in the quartz crucible 2.
A heater 5 is installed to control the temperature of the furnace, and a heat insulating cylinder 6 is placed between the heater 5 and the furnace body 1. A ring-shaped support member 7 is provided on the upper surface of the heat-insulating cylinder 6, and a reflector 8 is supported by the support member 7.
上記リフレクタ８は、石英ルツボ２の内径より小さく設
定された円筒部９ａとこの円筒部９ａの一ト端に続いて
内方に先細りした傾斜筒部９ｂとを一体形成した又は分
割組立てたリフレクタ本体９と、このリフレクタ本体９
の内筒部９ａの上端縁に等間隔社殿けられ、かつ支持部
材７の上面に支持された３個の湾曲状フック（係止部）
１０とから構成されている。なお、第１図中１１は引上
げられた単結晶１２を冷却する冷却筒である。The reflector 8 is a reflector main body that is integrally formed with a cylindrical portion 9a that is set to be smaller than the inner diameter of the quartz crucible 2 and an inclined cylindrical portion 9b that is tapered inward following one end of the cylindrical portion 9a or that is assembled separately. 9 and this reflector body 9
Three curved hooks (locking parts) are installed at equal intervals on the upper edge of the inner cylinder part 9a and supported on the upper surface of the support member 7.
It consists of 10. Note that 11 in FIG. 1 is a cooling cylinder for cooling the pulled single crystal 12.
上記のように構成された単結晶引上装置にあっては、従
来同様、石英ルツボ２内のシリコン融液４に種結晶をＷ
ｉ潰させた後に、この種結晶を引上げることにより、種
結晶の下端に順次単結晶１２が成長していく。In the single crystal pulling apparatus configured as described above, the seed crystal is placed in the silicon melt 4 in the quartz crucible 2 in the same way as before.
By pulling up this seed crystal after crushing, single crystals 12 are successively grown at the lower end of the seed crystal.
この場合、炉本体１の上部から供給されているアルゴン
ガス（Ａ「）は、傾斜筒部９ｂとシリコン融液４との空
隙部及び、各湾曲状フック１０間の空隙部をそれ′ぞれ
通って上下に分かれて円滑に流れていくから、シリコン
融液４の表面部に流れるアルゴンガスのｔｉＩｆｆｉ及
び流速を容易にコントロールでき、単結晶１２内に含ま
れる酸素濃度を制御できる上に、上記各湾曲状フック１
０が細幅で−ｍ化ケイ素の凝縮が起こりにくい構造であ
り、しかも、各湾曲状フック１０の上方から下方にかけ
てアルゴンガスが流れているから、リフレクタ８に一酸
化ケイ毫が凝縮することがない。また、各湾曲状フック
１０＠の間隙を通して、炉本体１の覗き窓１３から石英
ルツボ２の内周壁部付近のシリコン融液４の表面を視認
できるので、この内周壁部において万一再結晶が発生し
た場合には、確認が容易で、直ちに対応した操作ができ
る。In this case, the argon gas (A'') supplied from the upper part of the furnace body 1 fills the gaps between the inclined cylinder part 9b and the silicon melt 4 and the gaps between the curved hooks 10, respectively. Since the argon gas is divided into upper and lower parts through the silicon melt 4 and flows smoothly, the tiIffi and flow rate of the argon gas flowing to the surface of the silicon melt 4 can be easily controlled, and the oxygen concentration contained in the single crystal 12 can be controlled. Each curved hook 1
0 has a narrow width, making it difficult for condensation of silicon monoxide to occur, and since argon gas flows from above to below each curved hook 10, condensation of silicon monoxide on the reflector 8 is prevented. do not have. In addition, the surface of the silicon melt 4 near the inner circumferential wall of the quartz crucible 2 can be visually observed from the viewing window 13 of the furnace body 1 through the gap between each curved hook 10@, so that recrystallization should occur in the inner circumferential wall. If a problem occurs, it is easy to confirm and you can take appropriate action immediately.
なお、上記実施例においては、リフレクタ本体９を支持
する係止部として湾曲状フック１０を用いて説明したが
、これに限られることなく、例えば、第３図と第４図に
示すように１字状フック１４を用いても同様の効果が得
られる。In the above embodiment, the curved hook 10 is used as the locking part for supporting the reflector main body 9, but the invention is not limited to this, and for example, as shown in FIGS. A similar effect can be obtained by using the letter-shaped hook 14.
（発明の効果〕
以上説明したように、本発明は、円筒部とこの円筒部の
下端に続いて内方に先細りした傾斜筒部とを一体形成し
た又は分割組立てたリフレクタ本体と、このリフレクタ
本体の円筒部の上端縁に設けられ、かつ保ｍｖ：Ｉ４の
上部に支持された複数の係止部とを備えたものであるか
ら、リフレクタ本体を複数の係止部によって支持するこ
とにより、各係止部間を通って気体が流れ、この流れ及
び係止部の細幅構造が相俟って一酸化ケイ素の凝縮が生
じにくく、従って単結晶化を阻害する要因を排除できる
上に、各係止部間の間隙を通してルツボ内の溶融物の表
面を視認できるという優れた効果を有する。(Effects of the Invention) As explained above, the present invention provides a reflector body in which a cylindrical portion and an inclined cylindrical portion that tapers inward following the lower end of the cylindrical portion are integrally formed or are assembled separately, and The reflector body is provided at the upper end edge of the cylindrical portion of the reflector and is supported on the upper part of the reflector mv: I4. Gas flows between the locking parts, and this flow and the narrow structure of the locking parts combine to make it difficult for silicon monoxide to condense, thereby eliminating factors that inhibit single crystallization. This has an excellent effect in that the surface of the molten material in the crucible can be visually recognized through the gap between the locking parts.
第１図と第２図は本発明の−・実施例を示すもので、第
１図は概略構成図、第２図はリフレクタの平面図、第３
図と第４図は本発明の他の実施例を示すもので、第３図
は概略構成図、第４図はリフレクタの平面図である。
６・・・・・・保温筒、 ７・・・・・・支持部
材、８・・・・・・リフレクタ、 ９・・・・・・リ
フレクタ本体、９ａ・・・・・・円筒部、 ９ｂ・
・・・・・傾斜筒部、１０・・・・・・湾曲状フック（
係止部）、１２・・・・・・単結晶、 １４・・・
・・・１字状フック。1 and 2 show embodiments of the present invention, in which FIG. 1 is a schematic configuration diagram, FIG. 2 is a plan view of the reflector, and FIG.
3 and 4 show another embodiment of the present invention, with FIG. 3 being a schematic configuration diagram and FIG. 4 being a plan view of the reflector. 6... Heat retention tube, 7... Support member, 8... Reflector, 9... Reflector body, 9a... Cylindrical part, 9b・
...Incline tube part, 10...Curved hook (
(locking part), 12... single crystal, 14...
...1-character hook.
Claims (1)
る単結晶引上装置において、円筒部とこの円筒部の下端
に続いて内方に先細りした傾斜筒部とを一体形成した又
は分割組立てたリフレクタ本体と、このリフレクタ本体
の円筒部の上端縁に設けられ、かつ保温筒の上部に支持
された複数の係止部とを具備したことを特徴とする単結
晶引上装置。In a single crystal pulling apparatus for pulling and growing a single crystal by the Czochralski method, a reflector body is provided, in which a cylindrical part and an inclined cylindrical part that tapers inward following the lower end of the cylindrical part are integrally formed or are assembled separately; A single crystal pulling device comprising a plurality of locking portions provided at the upper end edge of the cylindrical portion of the reflector body and supported by the upper portion of the heat insulating cylinder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256758A JP2580197B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256758A JP2580197B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100086A true JPH01100086A (en) | 1989-04-18 |
| JP2580197B2 JP2580197B2 (en) | 1997-02-12 |
Family
ID=17297035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62256758A Expired - Lifetime JP2580197B2 (en) | 1987-10-12 | 1987-10-12 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580197B2 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03271187A (en) * | 1990-03-20 | 1991-12-03 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH0412087A (en) * | 1990-04-27 | 1992-01-16 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH04219386A (en) * | 1990-04-18 | 1992-08-10 | Nkk Corp | Apparatus for production of silicon single crystal |
| JPH05238883A (en) * | 1992-02-28 | 1993-09-17 | Shin Etsu Handotai Co Ltd | Production of single crystal silicone rod and apparatus for production |
| JPH06219886A (en) * | 1993-01-28 | 1994-08-09 | Mitsubishi Materials Shilicon Corp | Device for pulling up single crystal |
| WO1994028206A1 (en) * | 1993-05-31 | 1994-12-08 | Sumitomo Sitix Corporation | Apparatus and method for manufacturing single-crystal material |
| US5575847A (en) * | 1993-11-30 | 1996-11-19 | Sumitomo Sitix Corporation | Apparatus for producing single crystals |
| US5683505A (en) * | 1994-11-08 | 1997-11-04 | Sumitomo Sitix Corporation | Process for producing single crystals |
| US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
| JP2000007496A (en) * | 1998-06-25 | 2000-01-11 | Mitsubishi Materials Silicon Corp | Single crystal pulling-up equipment and single crystal pulling-up method using the same |
| JP2003221296A (en) * | 2002-01-29 | 2003-08-05 | Komatsu Electronic Metals Co Ltd | Apparatus and method for producing single crystal |
| JP2009001489A (en) * | 2008-08-28 | 2009-01-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus and method for producing single crystal |
-
1987
- 1987-10-12 JP JP62256758A patent/JP2580197B2/en not_active Expired - Lifetime
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03271187A (en) * | 1990-03-20 | 1991-12-03 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH04219386A (en) * | 1990-04-18 | 1992-08-10 | Nkk Corp | Apparatus for production of silicon single crystal |
| JPH0412087A (en) * | 1990-04-27 | 1992-01-16 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH05238883A (en) * | 1992-02-28 | 1993-09-17 | Shin Etsu Handotai Co Ltd | Production of single crystal silicone rod and apparatus for production |
| US5573591A (en) * | 1993-01-28 | 1996-11-12 | Mitsubishi Materials Silicon Corporation | Method of exhausting silicon oxide |
| US5476065A (en) * | 1993-01-28 | 1995-12-19 | Mitsubishi Materials Silicon Corp. | System for pulling-up monocrystal and method of exhausting silicon oxide |
| JPH06219886A (en) * | 1993-01-28 | 1994-08-09 | Mitsubishi Materials Shilicon Corp | Device for pulling up single crystal |
| WO1994028206A1 (en) * | 1993-05-31 | 1994-12-08 | Sumitomo Sitix Corporation | Apparatus and method for manufacturing single-crystal material |
| JPH07277887A (en) * | 1993-05-31 | 1995-10-24 | Sumitomo Sitix Corp | Appartus and process for producing single crystal |
| US5730799A (en) * | 1993-05-31 | 1998-03-24 | Sumitomo Sitix Corporation | Device for producing single crystals |
| US5925147A (en) * | 1993-05-31 | 1999-07-20 | Sumitomo Sitix Corporation | Process for producing single crystals |
| US5575847A (en) * | 1993-11-30 | 1996-11-19 | Sumitomo Sitix Corporation | Apparatus for producing single crystals |
| US5683505A (en) * | 1994-11-08 | 1997-11-04 | Sumitomo Sitix Corporation | Process for producing single crystals |
| US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
| JP2000007496A (en) * | 1998-06-25 | 2000-01-11 | Mitsubishi Materials Silicon Corp | Single crystal pulling-up equipment and single crystal pulling-up method using the same |
| JP2003221296A (en) * | 2002-01-29 | 2003-08-05 | Komatsu Electronic Metals Co Ltd | Apparatus and method for producing single crystal |
| JP2009001489A (en) * | 2008-08-28 | 2009-01-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus and method for producing single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2580197B2 (en) | 1997-02-12 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| EXPY | Cancellation because of completion of term |