JP7507155B2 - フッ素化アミンオキシド界面活性剤 - Google Patents
フッ素化アミンオキシド界面活性剤 Download PDFInfo
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- JP7507155B2 JP7507155B2 JP2021533423A JP2021533423A JP7507155B2 JP 7507155 B2 JP7507155 B2 JP 7507155B2 JP 2021533423 A JP2021533423 A JP 2021533423A JP 2021533423 A JP2021533423 A JP 2021533423A JP 7507155 B2 JP7507155 B2 JP 7507155B2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 8
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 8
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
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- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 6
- RFLWCZXTCAXOQE-UHFFFAOYSA-N CN1CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F Chemical compound CN1CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F RFLWCZXTCAXOQE-UHFFFAOYSA-N 0.000 description 5
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
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- 238000010998 test method Methods 0.000 description 5
- YQKDBWLHJXWCOX-UHFFFAOYSA-N 1-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)piperazine Chemical compound FC(C(C(C(F)(F)F)(F)F)(F)F)(S(=O)(=O)N1CCNCC1)F YQKDBWLHJXWCOX-UHFFFAOYSA-N 0.000 description 4
- QKSJDOOUAJHQRY-UHFFFAOYSA-N 2-bromoethoxy(trimethyl)silane Chemical compound C[Si](C)(C)OCCBr QKSJDOOUAJHQRY-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- IGWUGHRDQMRQNT-UHFFFAOYSA-N N-[3-(diethylamino)propyl]-N-ethyl-1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonamide Chemical compound C(C(F)(F)F)(F)(F)C(C(F)(F)S(=O)(=O)N(CCCN(CC)CC)CC)(F)F IGWUGHRDQMRQNT-UHFFFAOYSA-N 0.000 description 4
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
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- TUJPQFURUYEVFO-UHFFFAOYSA-N N-[2-(diethylamino)ethyl]-1,1,2,2,3,3,4,4,4-nonafluoro-N-methylbutane-1-sulfonamide Chemical compound N(C)(S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)CCN(CC)CC TUJPQFURUYEVFO-UHFFFAOYSA-N 0.000 description 3
- BEKXHFLVJGOXRL-UHFFFAOYSA-N N-[3-(diethylamino)propyl]-1,1,2,2,3,3,4,4,4-nonafluoro-N-[2-[2-(2-methoxyethoxy)ethoxy]ethyl]butane-1-sulfonamide Chemical compound FC(C(C(F)(F)F)(F)F)(C(F)(F)S(=O)(=O)N(CCCN(CC)CC)CCOCCOCCOC)F BEKXHFLVJGOXRL-UHFFFAOYSA-N 0.000 description 3
- BFYWGNYLRGXKJZ-UHFFFAOYSA-N N-[3-(dimethylamino)-2,2-dimethylpropyl]-1,1,2,2,3,3,4,4,4-nonafluoro-N-methylbutane-1-sulfonamide Chemical compound CC(C)(CN(C)C)CN(C)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F BFYWGNYLRGXKJZ-UHFFFAOYSA-N 0.000 description 3
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- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- XMRMVBVJGSKMEN-UHFFFAOYSA-N n-[3-(dimethylamino)propyl]-1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonamide Chemical compound CN(C)CCCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F XMRMVBVJGSKMEN-UHFFFAOYSA-N 0.000 description 3
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- WGYKZJWCGVVSQN-UHFFFAOYSA-O propan-1-aminium Chemical compound CCC[NH3+] WGYKZJWCGVVSQN-UHFFFAOYSA-O 0.000 description 3
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 3
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- CAZHFGTYGACKSG-UHFFFAOYSA-M 1,1-dimethyl-4-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)piperazin-1-ium iodide Chemical compound C[N+]1(CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)C.[I-] CAZHFGTYGACKSG-UHFFFAOYSA-M 0.000 description 2
- AKKSSUVDAMMJCL-UHFFFAOYSA-M 1-[1-methyl-4-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)piperazin-1-ium-1-yl]octan-1-one iodide Chemical compound CCCCCCCC(=O)[N+]1(CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)C.[I-] AKKSSUVDAMMJCL-UHFFFAOYSA-M 0.000 description 2
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- YTYDKDMTKRTNAO-UHFFFAOYSA-M 1-ethyl-4-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)-1-propylpiperazin-1-ium iodide Chemical compound CCC[N+]1(CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)CC.[I-] YTYDKDMTKRTNAO-UHFFFAOYSA-M 0.000 description 2
- XFHRRYJBHRZPKL-UHFFFAOYSA-M 1-methyl-4-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)-1-propylpiperazin-1-ium iodide Chemical compound CCC[N+]1(CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)C.[I-] XFHRRYJBHRZPKL-UHFFFAOYSA-M 0.000 description 2
- IUDNRKGPFWUYIC-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]ethyl 4-methylbenzenesulfonate Chemical compound COCCOCCOCCOS(=O)(=O)C1=CC=C(C)C=C1 IUDNRKGPFWUYIC-UHFFFAOYSA-N 0.000 description 2
- JZVOVVQAVURUJH-UHFFFAOYSA-M 4-(1,1,2,2,3,3,4,4,4-nonafluorobutylsulfonyl)-1,1-dipropylpiperazin-1-ium iodide Chemical compound CCC[N+]1(CCN(CC1)S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)CCC.[I-] JZVOVVQAVURUJH-UHFFFAOYSA-M 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
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- AMPYMRIIZCRKLS-UHFFFAOYSA-N N-[3-(dimethylamino)-2,2-dimethylpropyl]-1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonamide Chemical compound C(F)(C(C(F)(F)F)(F)F)(C(F)(S(=O)(=O)NCC(C)(CN(C)C)C)F)F AMPYMRIIZCRKLS-UHFFFAOYSA-N 0.000 description 2
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- 230000002378 acidificating effect Effects 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
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- 238000001035 drying Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
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- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 2
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- VUQUOGPMUUJORT-UHFFFAOYSA-N methyl 4-methylbenzenesulfonate Chemical compound COS(=O)(=O)C1=CC=C(C)C=C1 VUQUOGPMUUJORT-UHFFFAOYSA-N 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
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- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
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- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- VMGZWUXGXSSMAB-UHFFFAOYSA-N n',n'-dimethylpropane-1,3-diamine;hydrofluoride Chemical compound F.CN(C)CCCN VMGZWUXGXSSMAB-UHFFFAOYSA-N 0.000 description 1
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- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000005003 perfluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
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- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 241000894007 species Species 0.000 description 1
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- 239000006188 syrup Substances 0.000 description 1
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-M toluene-4-sulfonate Chemical class CC1=CC=C(S([O-])(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-M 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
- C07C303/36—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of amides of sulfonic acids
- C07C303/40—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of amides of sulfonic acids by reactions not involving the formation of sulfonamide groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
- C07C311/01—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms
- C07C311/02—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C311/09—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton the carbon skeleton being further substituted by at least two halogen atoms
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
- C07D295/04—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms
- C07D295/12—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms
- C07D295/125—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms with the ring nitrogen atoms and the substituent nitrogen atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings
- C07D295/13—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly or doubly bound nitrogen atoms with the ring nitrogen atoms and the substituent nitrogen atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings to an acyclic saturated chain
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
- C07D295/22—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with hetero atoms directly attached to ring nitrogen atoms
- C07D295/26—Sulfur atoms
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/75—Amino oxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- Detergent Compositions (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
Description
IPC試験方法
ICP試料を秤量し、次いで105℃で濃縮硝酸で消化し、次いで水で希釈し、Perkin Elmer 8300上で金属を測定した。
試料は、以下の溶媒:水、2.5重量%の水酸化テトラメチルアンモニウム、2.5重量%の塩酸、又は50%硫酸の20グラム(g)中の所望の濃度250百万分率(ppm)又は2000ppm(重量/重量)で調製した。表面張力は、Kruss K100C,Analytical Instrument No.1222で測定した。表面張力は、±1ダイン/cmで較正する。
別途記載のない限り、試料をCDCl3中に溶解し、Bruker FT NMR機器を使用して、1H NMR(500MHz)及び19F NMR(500MHz)スペクトルを得た。
Agilent 6230 LC/MS TOFを使用して、HPLC-HRMSにより試料を分析した。
N-(ジメチルアミノ)プロピル)-1,1,2,2,3,3,4,4,4-ノンフルオロブタン-1-スルホンアミド(1)の合成:
(N-メチル-N-(ジメチルアミノ)エチル)-1,1,2,2,3,3,4,4,4-ノンフルオロブタン-1-スルホンアミド(3)の合成:
(N-メチル-N-(ジエチルアミノ)エチル)--1,1,2,2,3,3,4,4,4-ノンフルオロブタン-1-スルホンアミドオキシド(11)の合成:
以下の表において、実施例は、EX-として指定され、比較例は、CE-として指定される。
C4F9SO2N(R)A-N(R’)(R”)(O)
式中、Aはアルキレン基(CH2)nであるか、又は2つの窒素を結合する環状部分であり、nは、2~6の整数であり、R=1個~6個の炭素を含有するアルキル基、又は1個~8個の炭素を含有するアルコキシ基であり、R’及びR”は、3つの溶液、DI水、2.5%水酸化テトラメチルアンモニウム、及び5%HCl中で2000ppmで1個~6個の炭素を含有するアルキル基である。2000ppmでの比較ペルフルオロブタンスルホンアミドカチオン性及び双極性界面活性剤表面張力も表4に列挙されている。ペルフルオロオクチル又はペルフルオロヘキシル界面活性剤は、それらのより長いペルフルオロ鎖が生活性な市販製品であると過度に生物学的に考慮されるため、製造された。表3及び表4の表面張力を比較すると、C-4アミンオキシドは、C-4ペルフルオロ化テイルを有する他のものの中で、カチオン性/双極性界面活性剤の優れた群であることを見ることができる。
(1)水性界面活性剤組成物であって、下記式:
ii)水性溶媒と、
を含み、前記組成物が有するイオン性汚染物質が1000ppb未満である、水性界面活性剤組成物。
(2)R f が、3個~5個の炭素原子を有する、項目1に記載の組成物。
(3)前記界面活性剤が、前記組成物の少なくとも0.001重量%の濃度で存在する、項目1に記載の組成物。
(4)前記界面活性剤が、最大で前記組成物の1重量%の濃度で存在する、項目1に記載の組成物。
(5)500ppb未満のイオン性汚染物質を有する、項目1~4のいずれかに記載の組成物。
(6)前記任意の溶媒が、水溶性有機溶媒である、項目1~5のいずれかに記載の組成物。
(7)1重量%未満の有機溶媒を含む、項目1~6のいずれかに記載の組成物。
(8)前記組成物が、iii)研磨粒子、他の酸、酸化剤、エッチング剤、腐食防止剤、キレート剤、電解質、界面活性剤、光沢剤、及びレベラーからなる群から選択される1つ以上の添加剤を更に含む、項目1に記載の組成物。
(9)a)少なくとも0.001重量%の項目1に記載の界面活性剤と、b)任意の水性溶媒と、c)酸化剤と、を含む、組成物。
(10)前記酸化剤が、硝酸、HNO 3 、H 2 O 2 、Fe(NO 3 ) 3 、O 3 、及びこれらの混合物からなる群から選択される、項目9に記載の組成物。
(11)0.001重量%~0.5重量%の範囲の前記界面活性剤と、1重量%~10重量%、好ましくは3重量%~5重量%のNH 4 OHと、1重量%~10重量%、好ましくは3重量%~5重量%のH 2 O 2 と、脱イオン水と、を含む、項目1に記載の水性界面活性剤組成物。
(12)基材を項目11に記載の組成物と接触させる工程を含む、有機汚染物質の除去のためのRCA洗浄プロセス。
(13)0.001重量%~0.5重量%の前記式Iの界面活性剤と、0.25重量%~10重量%、好ましくは0.5重量%~5重量%のHFと、脱イオン水と、を含む、項目1に記載の水性界面活性剤組成物。
(14)基材を項目13に記載の組成物と接触させる工程を含む、基材から酸化物層を除去するための洗浄プロセス。
(15)0.001重量%~0.5重量%の前記式Iの界面活性剤と、1重量%~10重量%、好ましくは4重量%~6重量%の範囲のHClと、1重量%~10重量%、好ましくは3重量%~5重量%のH 2 O 2 と、脱イオン水と、を含む、項目1に記載の水性界面活性剤組成物(SC-2洗浄組成物)。
(16)基材を項目15に記載の組成物と接触させる工程を含む、イオン性汚染物質の除去(イオン洗浄)のためRCA洗浄プロセス。
(17)RCA洗浄組成物の工程を含むRCA洗浄プロセスであって、前記工程は順次使用されてもよく、前記工程は、項目11に記載の組成物を使用して、有機汚染物質を水酸化アンモニウム/過酸化水素水溶液で除去するための、項目13に記載の組成物を使用して、薄い酸化物層を水に溶解したフッ化水素を使用して除去するための、又は項目15に記載の組成物を使用して、イオン性汚染物質を過酸化水素を含むHCl水溶液を使用して除去するためのものである、RCA洗浄プロセス。
(18)項目1に記載の組成物を含むCMPスラリー組成物であって、0.001重量%~0.5重量%の前記界面活性剤と、1重量%~10重量%の有機酸と、1~10重量%のH 2 O 2 と、水性溶媒と、研磨粒子と、を含む、CMPスラリー組成物。
(19)前記有機酸が、クエン酸、シュウ酸、コハク酸、及びアルキルスルホン酸から選択される、項目18に記載のCMPスラリー。
(20)10重量%~15重量%のH 2 O 2 と、25重量%~50重量%のH 2 SO 4 と、少なくとも0.001重量%の前記界面活性剤と、を含む、項目1に記載の組成物。
(21)基材を項目20に記載の組成物と接触させることを含む、エッチングプロセス。
(22)前記アミンオキシドが、前記前駆体アミンを過酸化物で処理することによって調製される、項目1~21のいずれかに記載の組成物。
(23)前記前駆体アミンが、下記式:
(24)前記前駆体アミンが、酸化前に蒸留されている、項目23に記載の組成物。
Claims (10)
- Rfが、3個~5個の炭素原子を有する、請求項1に記載の組成物。
- 前記界面活性剤が、前記組成物の少なくとも0.001重量%の濃度で存在する、請求項1に記載の組成物。
- 前記界面活性剤が、最大で前記組成物の1重量%の濃度で存在する、請求項1に記載の組成物。
- 500ppb未満のイオン性汚染物質を有する、請求項1~4のいずれか一項に記載の組成物。
- 前記水性溶媒が、水溶性有機溶媒である、請求項1~5のいずれか一項に記載の組成物。
- 1重量%未満の有機溶媒を含む、請求項1~6のいずれか一項に記載の組成物。
- 前記組成物が、iii)研磨粒子、他の酸、酸化剤、エッチング剤、腐食防止剤、キレート剤、電解質、界面活性剤、光沢剤、及びレベラーからなる群から選択される1つ以上の添加剤を更に含む、請求項1に記載の組成物。
- 前記酸化剤が、硝酸、HNO3、H2O2、Fe(NO3)3、O3、及びこれらの混合物からなる群から選択される、請求項9に記載の組成物。
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US201862778565P | 2018-12-12 | 2018-12-12 | |
US62/778,565 | 2018-12-12 | ||
PCT/IB2019/060716 WO2020121248A1 (en) | 2018-12-12 | 2019-12-12 | Fluorinated amine oxide surfactants |
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- 2019-12-11 TW TW108145329A patent/TW202035361A/zh unknown
- 2019-12-12 WO PCT/IB2019/060716 patent/WO2020121248A1/en active Application Filing
- 2019-12-12 US US17/297,907 patent/US20220040655A1/en not_active Abandoned
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