JP7500669B2 - 酸化物半導体を含むディスプレイ装置 - Google Patents
酸化物半導体を含むディスプレイ装置 Download PDFInfo
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- JP7500669B2 JP7500669B2 JP2022130606A JP2022130606A JP7500669B2 JP 7500669 B2 JP7500669 B2 JP 7500669B2 JP 2022130606 A JP2022130606 A JP 2022130606A JP 2022130606 A JP2022130606 A JP 2022130606A JP 7500669 B2 JP7500669 B2 JP 7500669B2
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- 239000004065 semiconductor Substances 0.000 title claims description 192
- 239000010410 layer Substances 0.000 claims description 163
- 239000010409 thin film Substances 0.000 claims description 139
- 239000010408 film Substances 0.000 claims description 101
- 239000000463 material Substances 0.000 claims description 62
- 238000002955 isolation Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 51
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000010936 titanium Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 24
- 239000011810 insulating material Substances 0.000 description 21
- 239000011651 chromium Substances 0.000 description 20
- 239000010949 copper Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 241001270131 Agaricus moelleri Species 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H01L29/772—Field effect transistors
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Description
前記発光素子は素子基板上に位置することができる。前記素子基板上には、各発光素子を制御するための駆動回路が位置することができる。例えば、各発光素子は前記駆動回路のうちの一つと電気的に連結されることができる。各駆動回路は、スキャン信号に応じてデータ信号に対応する駆動電流を生成することができる。例えば、各駆動回路は多数の薄膜トランジスタを含むことができる。
本発明が解決しようとする他の課題は、スイッチング薄膜トランジスタの特性変化なしに、駆動薄膜トランジスタのゲート電極に印加される電圧による電流変動値を低めることができるディスプレイ装置を提供することである。
本発明が解決しようとする課題は先に言及した課題に限定されない。ここで言及しなかった課題は下記の記載から通常の技術者に明らかに理解可能であろう。
第1遮光パターンは第2遮光パターンと異なる物質を含むことができる。
第1遮光パターンは第1スイッチング薄膜トランジスタのゲート電極と同じ物質を含むことができる。
第2分離絶縁膜は第1分離絶縁膜と同じ物質を含むことができる。
第1分離絶縁膜及び第2分離絶縁膜はシリコン酸化物からなる無機絶縁膜であることができる。
第2遮光パターンは駆動ソース電極と電気的に連結されることができる。
第1遮光パターンは第2ゲート電極と電気的に連結されることができる。
第1分離絶縁膜上には、第1スイッチング薄膜トランジスタ、第2スイッチング薄膜トランジスタ、及び駆動薄膜トランジスタから離隔するストレージキャパシタが位置することができる。ストレージキャパシタはキャパシタ下部電極及びキャパシタ上部電極の積層構造を有することができる。
遮光パターンは水素と安定的に結合する物質を含むことができる。
遮光パターンはチタン(Ti)を含むことができる。
駆動ゲート電極は第1駆動ゲート及び第2駆動ゲートの積層構造を有することができる。第1駆動ゲートは遮光パターンと同じ物質を含むことができる。第2駆動ゲートは第1駆動ゲートより低い抵抗を有することができる。
駆動ソース電極は遮光パターンと電気的に連結されることができる。
駆動半導体パターンは導電性不純物がドーピングされたソース領域及びドレイン領域を含むことができる。
図1は本発明の実施例によるディスプレイ装置を概略的に示す図である。図2は図1のI-I線に沿って切断した断面を示す図である。図3aは図2のK1領域を拡大した図である。図3bは図2のK2領域を拡大した図である。
前記第1駆動ゲート431は前記第2駆動ゲート432と異なる物質を含むことができる。前記第1駆動ゲート431は水素の浸透を遮断することができる物質を含むことができる。前記第1駆動ゲート431は第2遮光パターン720と同じ物質を含むことができる。例えば、前記第1駆動ゲート431はチタン(Ti)を含むことができる。これにより、本発明の他の実施例によるディスプレイ装置は、後続工程によって発生する水素が前記駆動半導体パターン410の第3チャネル領域に浸透することができない。よって、本発明の他の実施例によるディスプレイ装置は、前記駆動薄膜トランジスタ400の動作特性に対する信頼性が向上することができる。
200 第1スイッチング薄膜トランジスタ
300 第2スイッチング薄膜トランジスタ
310 第2半導体パターン
400 駆動薄膜トランジスタ
410 駆動半導体パターン
500 発光素子
710 第1遮光パターン
720 第2遮光パターン
Claims (16)
- 素子基板上に位置する第1分離絶縁膜と、
前記素子基板上に位置し、前記素子基板と前記第1分離絶縁膜との間に位置する第1半導体パターン、第1ゲート電極、及びドレイン電極を含む第1スイッチング薄膜トランジスタと、
前記第1分離絶縁膜上に位置し、前記第1半導体パターンと異なる物質からなる第2半導体パターンを含む第2スイッチング薄膜トランジスタと、
前記第1分離絶縁膜上に位置し、前記第2半導体パターンと同じ物質からなる駆動半導体パターン、駆動ゲート電極、及び駆動ドレイン電極を含む駆動薄膜トランジスタと、
前記駆動薄膜トランジスタの前記駆動ドレイン電極と電気的に連結される発光素子と、
前記素子基板と前記第1分離絶縁膜との間に位置し、前記第2半導体パターンと重畳し、第2ゲート電極と電気的に連結される第1遮光パターンと、
前記素子基板と前記駆動半導体パターンとの間に位置する第2遮光パターンとを含み、
前記第2遮光パターンは導電性物質を含み、
前記駆動薄膜トランジスタの前記駆動ゲート電極は、前記第1スイッチング薄膜トランジスタの前記ドレイン電極と電気的に連結され、
前記第1スイッチング薄膜トランジスタまたは前記第2スイッチング薄膜トランジスタは、データ信号を前記駆動薄膜トランジスタの前記駆動ゲート電極に伝達し、
前記駆動薄膜トランジスタは前記データ信号に対応する駆動電流を生成し、前記発光素子から放出される光の輝度は、前記駆動電流によって制御され、
前記第2遮光パターンと前記駆動半導体パターンとの間の距離は、前記第1遮光パターンと前記第2半導体パターンとの間の距離より小さく、
前記第1遮光パターンは、前記第1ゲート電極の下方に位置する第1ゲート絶縁膜と、前記第1ゲート電極を覆う第1層間絶縁膜との間に配置され、前記第1遮光パターンは、前記第1層間絶縁膜の下方に配置され、
前記第2遮光パターンは、前記第1層間絶縁膜上に配置される、ディスプレイ装置。 - 前記第1半導体パターンはシリコンを含み、前記第2半導体パターン及び前記駆動半導体パターンは酸化物半導体を含む、請求項1に記載のディスプレイ装置。
- 前記第1遮光パターンは前記第2遮光パターンと異なる物質を含む、請求項1に記載のディスプレイ装置。
- 前記第1遮光パターンは前記第1スイッチング薄膜トランジスタの前記第1ゲート電極と同じ物質を含む、請求項3に記載のディスプレイ装置。
- 前記第2遮光パターンと前記駆動半導体パターンとの間に位置する第2分離絶縁膜をさらに含み、
前記第2分離絶縁膜は前記第1分離絶縁膜と前記第2半導体パターンとの間に延びる、請求項1に記載のディスプレイ装置。 - 前記第2分離絶縁膜は、前記第1分離絶縁膜より薄い厚さを有する、請求項5に記載のディスプレイ装置。
- 前記第2分離絶縁膜は前記第1分離絶縁膜と同じ物質を含む、請求項5に記載のディスプレイ装置。
- 前記第1分離絶縁膜及び前記第2分離絶縁膜はシリコン酸化物からなる無機絶縁膜である、請求項7に記載のディスプレイ装置。
- 前記第2遮光パターンと前記駆動半導体パターンとの間の距離は、前記素子基板と前記第2遮光パターンとの間の距離より小さい、請求項1に記載のディスプレイ装置。
- 前記駆動薄膜トランジスタの前記駆動半導体パターンと前記駆動ゲート電極との間に位置するゲート絶縁膜、及び前記第2遮光パターンと前記駆動半導体パターンとの間に位置する第2分離絶縁膜をさらに含み、
前記駆動半導体パターンは前記第2遮光パターンと前記駆動ゲート電極との間に位置し、
第2分離絶縁膜の厚さは前記ゲート絶縁膜の厚さより薄い、請求項9に記載のディスプレイ装置。 - 前記第2遮光パターンは水素と安定的に結合する物質を含む、請求項9に記載のディスプレイ装置。
- 前記第2遮光パターンはチタン(Ti)を含む、請求項11に記載のディスプレイ装置。
- 前記駆動ゲート電極は第1駆動ゲート及び第2駆動ゲートの積層構造を有し、
前記第1駆動ゲートは前記第2遮光パターンと同じ物質を含む、請求項11に記載のディスプレイ装置。 - 前記第2駆動ゲートは前記第1駆動ゲートより低い抵抗を有する、請求項13に記載のディスプレイ装置。
- 駆動ソース電極は前記第2遮光パターンと電気的に連結される、請求項9に記載のディスプレイ装置。
- 前記駆動半導体パターンは、導電性不純物がドーピングされたソース領域及びドレイン領域を含む、請求項15に記載のディスプレイ装置。
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