JP7493709B2 - 共振装置及び共振装置製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 156
- 239000002184 metal Substances 0.000 claims description 156
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 13
- 239000006023 eutectic alloy Substances 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 239000011733 molybdenum Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
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- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000010943 off-gassing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical group [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/18—Zonal welding by interposing weld-preventing substances between zones not to be welded
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Description
まず、図1及び図2を参照しつつ、本発明の一実施形態に従う共振装置の概略構成について説明する。図1は、一実施形態における共振装置1の外観を概略的に示す斜視図である。図2は、図1に示した共振装置1の構造を概略的に示す分解斜視図である。
図14は、図5に示した接合部60及びその周辺の構成の変形例を概略的に示す要部拡大断面図である。なお、変形例において、図5に示した接合部60と同一の構成については、同一の符号を付し、その説明を適宜省略する。また、同様の構成による同様の作用効果については、逐次言及しない。
この場合、配線層81Aは、共振子10における振動部120の周囲の一部に形成される。配線層81Aの上には、当該配線層81Aを覆うように拡散防止層85Aが形成される。そして、拡散防止層85Aの上に第1金属層61が形成される。このようにMEMS基板50に形成された拡散防止層85A上の第1金属層61と、上蓋30の裏面に形成された第2金属層62とを共晶接合することにより、共晶層65を含む接合部60が形成される。
Claims (14)
- 共振子を含む第1基板と、
第2基板と、
導電性を有し、前記第1基板と前記第2基板とを接合する接合部と、を備え、
前記第1基板は、前記共振子の下部電極と電気的に接続される配線層と、該配線層と前記接合部とを電気的に接続する拡散防止層と、をさらに含む、
共振装置。 - 前記接合部は、アルミニウムを主成分とする第1金属と、ゲルマニウムの第2金属との共晶合金を主成分とする共晶層を含む、
請求項1に記載の共振装置。 - 前記拡散防止層の材料は、モリブデン又はタングステンである、
請求項2に記載の共振装置。 - 前記下部電極の材料は、縮退シリコンである、
請求項1から3のいずれか一項に記載の共振装置。 - 前記配線層の材料は、アルミニウムを主成分とする金属である、
請求項4に記載の共振装置。 - 前記配線層は、前記第1基板において、前記接合部の端部から距離を空けて配置される、
請求項1から5のいずれか一項に記載の共振装置。 - 第1金属層と、共振子と、該共振子の下部電極と電気的に接続される配線層と、該配線層と前記第1金属層とを電気的に接続する拡散防止層と、を含む第1基板を用意する工程と、
第2金属層を含む第2基板を用意する工程と、
前記第1基板と前記第2基板とを接合する工程であって、前記第1金属層の第1金属と前記第2金属層の第2金属との共晶合金を主成分とする共晶層を含む接合部を形成する、接合する工程と、を含む、
共振装置製造方法。 - 前記第1基板を用意する工程は、
前記拡散防止層の形成前又は形成後に、前記第1金属層及び前記配線層を形成することと、を含む、
請求項7に記載の共振装置製造方法。 - 前記第1基板を用意する工程は、
前記拡散防止層の第1層を形成することと、
該第1層の上に前記拡散防止層の第2層を形成することと、を含む、
請求項7又は8に記載の共振装置製造方法。 - 前記第1基板を用意する工程は、
前記第1基板において、前記第1金属層の端部から距離を空けた位置に前記配線層を形成することを含む、
請求項7から9のいずれか一項に記載の共振装置製造方法。 - 前記第1金属は、アルミニウムを主成分とする金属であり、
前記第2金属は、ゲルマニウムである、
請求項7から10のいずれか一項に記載の共振装置製造方法。 - 前記拡散防止層の材料は、モリブデン又はタングステンである、
請求項11に記載の共振装置製造方法。 - 前記下部電極の材料は、縮退シリコンである、
請求項7から12のいずれか一項に記載の共振装置製造方法。 - 前記配線層の材料は、アルミニウムを主成分とする金属である、
請求項13に記載の共振装置製造方法。
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011111541A1 (ja) | 2010-03-09 | 2011-09-15 | アルプス電気株式会社 | Memsセンサ |
JP2014200041A (ja) | 2013-03-29 | 2014-10-23 | セイコーエプソン株式会社 | 振動片の電極構造、振動片の製造方法、振動子、発振器、電子機器および移動体 |
WO2018008480A1 (ja) | 2016-07-05 | 2018-01-11 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2019155663A1 (ja) | 2018-02-09 | 2019-08-15 | 株式会社村田製作所 | Memsデバイス |
WO2019159410A1 (ja) | 2018-02-14 | 2019-08-22 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020027121A1 (ja) | 2018-08-02 | 2020-02-06 | 株式会社村田製作所 | Memsデバイス |
WO2020049814A1 (ja) | 2018-09-04 | 2020-03-12 | 株式会社村田製作所 | Memsデバイスの製造方法及びmemsデバイス |
WO2020066126A1 (ja) | 2018-09-28 | 2020-04-02 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020085188A1 (ja) | 2018-10-24 | 2020-04-30 | 株式会社村田製作所 | 共振装置 |
WO2020194810A1 (ja) | 2019-03-26 | 2020-10-01 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020255474A1 (ja) | 2019-06-19 | 2020-12-24 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2021044663A1 (ja) | 2019-09-05 | 2021-03-11 | 株式会社村田製作所 | パッケージ構造及びその製造方法 |
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Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011111541A1 (ja) | 2010-03-09 | 2011-09-15 | アルプス電気株式会社 | Memsセンサ |
JP2014200041A (ja) | 2013-03-29 | 2014-10-23 | セイコーエプソン株式会社 | 振動片の電極構造、振動片の製造方法、振動子、発振器、電子機器および移動体 |
WO2018008480A1 (ja) | 2016-07-05 | 2018-01-11 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2019155663A1 (ja) | 2018-02-09 | 2019-08-15 | 株式会社村田製作所 | Memsデバイス |
WO2019159410A1 (ja) | 2018-02-14 | 2019-08-22 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020027121A1 (ja) | 2018-08-02 | 2020-02-06 | 株式会社村田製作所 | Memsデバイス |
WO2020049814A1 (ja) | 2018-09-04 | 2020-03-12 | 株式会社村田製作所 | Memsデバイスの製造方法及びmemsデバイス |
WO2020066126A1 (ja) | 2018-09-28 | 2020-04-02 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020085188A1 (ja) | 2018-10-24 | 2020-04-30 | 株式会社村田製作所 | 共振装置 |
WO2020194810A1 (ja) | 2019-03-26 | 2020-10-01 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2020255474A1 (ja) | 2019-06-19 | 2020-12-24 | 株式会社村田製作所 | 共振装置及び共振装置製造方法 |
WO2021044663A1 (ja) | 2019-09-05 | 2021-03-11 | 株式会社村田製作所 | パッケージ構造及びその製造方法 |
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